Abstract: An efficient method for producing a silicon oxide powder at a low cost is provided. This method comprises the steps of heating a powder mixture of a silicon dioxide powder and a metal silicon powder to a temperature of 1,100 to 1,450° C. in an inert gas or under reduced pressure to generate silicon monoxide gas, and precipitating the silicon monoxide gas on a surface of a substrate to produce the silicon oxide powder, and in this method, the silicon dioxide powder has an average particle diameter of up to 1 ?m, and the metal silicon powder has an average particle diameter of 30 ?m.

Abstract: A melt of a material is cooled and a sheet of the material is formed in the melt. This sheet is transported, cut into at least one segment, and cooled in a cooling chamber. The material may be Si, Si and Ge, Ga, or GaN. The cooling is configured to prevent stress or strain to the segment. In one instance, the cooling chamber has gas cooling.

Abstract: Provided is iron silicide powder in which the content of oxygen as the gas component is 1500 pppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron silicide powder containing FeSi2 as its primary component. The content of oxygen as the gas component contained in the iron silicide powder will decrease, and the iron silicide powder can be easily pulverized as a result thereof. Thus, the mixture of impurities when the pulverization is unsatisfactory will be reduced, the specific surface area of the iron silicide powder will increase, and the density can be enhanced upon sintering the iron silicide powder.

Abstract: One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T2, wherein the density of Si and/or Ge is smaller than the density of the molten metallic bath; cooling the molten metallic bath to a lower temperature T1, thereby causing Si and/or Ge to separate out of the molten metallic bath and to float and grow as a Si and/or Ge foil on a top surface of the molten metallic bath; and separating the floating Si and/or Ge foil from the top surface of the molten metallic bath.

Abstract: In order to improve quantum efficiency and/or durability of phosphors, a complex oxynitride phosphor is provided represented by the following formula, which can be obtained by firing a phosphor precursor in the presence of flux. M1xBayM2zLuOvNw (In the formula, M1 represents at least one kind of activation element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb, M2 represents at least one kind of bivalent metal element selected from the group consisting of Sr, Ca, Mg and Zn, L represents a metal element selected from the metal elements belonging to the fourth group or the fourteenth group of the periodic table, and 0.00001?x?3, 0?y?2.99999, 2.6?x+y+z?3, 0<u?11, 6<v?25, and 0<w?17.

Abstract: Methods are described that have the capability of producing submicron/nanoscale particles, in some embodiments dispersible, at high production rates. In some embodiments, the methods result in the production of particles with an average diameter less than about 75 nanometers that are produced at a rate of at least about 35 grams per hour. In other embodiments, the particles are highly uniform. These methods can be used to form particle collections and/or powder coatings. Powder coatings and corresponding methods are described based on the deposition of highly uniform submicron/nanoscale particles.

Abstract: A process for providing silicon compounds from a silicon dioxide compound, preferably sand, with the following steps: a) introducing the silicon dioxide compound into a combustion zone; b) heating the combustion zone together with the silicon dioxide compound; c) conversion of silicon dioxide from the silicon dioxide compound into silicon (Si2), wherein a reducing agent is supplied in order to remove the oxygen from the silicon dioxide; d) injecting a gaseous reaction partner in order to produce the silicon compound from the silicon (Si2).

Abstract: Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which comprise a first element, with a catalyst. The catalyst and the first element should form when heated a liquid, mixed phase having a eutectic or peritectic point. The granules, which have been coated with the catalyst, can then be heated to a temperature greater than or equal to the eutectic or peritectic point. During heating, a vapor source comprising the second element is introduced. The vapor source chemically interacts with the liquid, mixed phase to consume the first element and to induce condensation of a product that comprises the first and second elements in the form of a nanowire.

Abstract: A negative electrode for a lithium ion secondary battery including a current collector and an active material layer carried on the current collector, wherein the active material layer includes an active material and no binder, the active material contains silicon and nitrogen, and the active material layer has a larger nitrogen ratio on a side of a first face which is in contact with the current collector than on a side of a second face which is not in contact with the current collector.

Abstract: Provided is iron silicide powder in which the content of oxygen as the gas component is 1500 ppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron silicide powder containing FeSi2 as its primary component. The content of oxygen as the gas component contained in the iron silicide powder will decrease, and the iron silicide powder can be easily pulverized as a result thereof. Thus, the mixture of impurities when the pulverization is unsatisfactory will be reduced, the specific surface area of the iron silicide powder will increase, and the density can be enhanced upon sintering the iron silicide powder.

Abstract: Provided is a silicon nitride film which has an excellent charge storage capacity and thus is useful as a charge storage layer of a semiconductor memory device. The silicon nitride film having substantially uniform trap density in the film thickness direction has high charge storage performance. The silicon nitride film is formed by plasma CVD by using a plasma processing apparatus (100), wherein microwaves are introduced into a chamber (1) by a plane antenna having a plurality of holes, plasma is generated by the microwaves while a source gas including nitrogen-containing compound and silicon-containing compound is introduced into the chamber (1), and the silicon nitride film is deposited on the surface of a processing object by the plasma.

Abstract: A method by which ceramic nanowires with diameters ranging from several to several tens of nanometers can be synthesized with improvements in the shape retention of the nanowires and the yield of conversion to ceramic, which method comprises the steps of forming a thin film of a silicon-containing polymer usable as a ceramic precursor, irradiating the thin film with ion beams to form cylindrical crosslinked portions, extracting the un-crosslinked portions with a solvent to produce nanowires of the silicon-containing polymer, irradiating the nanowires with an ionizing radiation so that they are crosslinked again, and firing the re-crosslinked nanowires.

Abstract: A method by which ceramic nanowires with diameters ranging from several to several tens of nanometers can be synthesized with improvements in the shape retention of the nanowires and the yield of conversion to ceramic, which method comprises the steps of forming a thin film of a silicon-containing polymer usable as a ceramic precursor, irradiating the thin film with ion beams to form cylindrical crosslinked portions, extracting the un-crosslinked portions with a solvent to produce nanowires of the silicon-containing polymer, irradiating the nanowires with an ionizing radiation so that they are crosslinked again, and firing the re-crosslinked nanowires.

Abstract: The invention relates to the area of oil and gas production (especially, to the production in which the propping technique is used for the stimulation of a well) and can be used in the development of a composition and a method of production of propping agents (proppant), as well as a method of application of these propping agents. A new type of proppant, proppant production method and use of the proppant are based on allowing the production of proppant having an apparent density of 2.5 to 4.0 g/cm3, as well as a high mechanical strength and a high chemical durability. A proppant contains granules made of the sintered feedstock, wherein the charge mixture containing at least one of the following materials—silicon carbide, boron carbide, titanium carbide, silicon nitride, titanium nitride, boron nitride, silicon oxynitrides, SIALON-type compounds, was used as the feedstock.

Abstract: The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds.

Abstract: The present invention relates to a method of preparing silicon germanium alloy nanocrystals by the simultaneous thermal disproportionation of a siliceous material and GeX2 in a conventional tube furnace. Also included is a method of preparing free standing silicon germanium nanocrystals by the acid etching product of the product of the thermal disproportionation of a siliceous material and GeX2.

Abstract: A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi1.02-2.00. The target material is superior in workability and embrittlement resistance and is suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2 film. A method of manufacturing the above referenced hafnium silicide target is also provided.

Abstract: This invention relates to reusable crucibles for production of ingots of semiconductor grade silicon made of nitride bonded silicon nitride (NBSN). The crucibles may be made by mixing silicon nitride powder with silicon powder, forming a green body of the crucible, and then heating the green body in an atmosphere containing nitrogen such that the silicon powder is nitrided forming the NBSN-crucible. Alternatively the crucibles may assembled by plate elements of NBSN-material that are to be the bottom and walls of a square cross-section crucible, and optionally sealing the joints by applying a paste comprising silicon powder and optionally silicon nitride particles, followed by a second heat treatment in a nitrogen atmosphere.

Abstract: Disclosed may be a phase change material alloy, a phase change memory device including the same, and methods of manufacturing and operating the phase change memory device. The phase change material alloy may include Si and Sb. The alloy may be a Si—O—Sb alloy further including O. The Si—O—Sb alloy may be SixOySbz, wherein, when x/(x+z) may be x1, 0.05?x1?0.30, 0.00?y?0.50, and x+y+z may be 1. The Si—O—Sb alloy may further comprise an element other than Si, O, and Sb.

Abstract: Provided are resistive materials for a microbolometer, a method for preparation of resistive materials and a microbolometer containing the resistive materials. The resistive materials for the microbolometer include an alloy of silicon and antimony or an alloy of silicon, antimony and germanium, which has a high TCR and a low resistance.

Abstract: A process for producing a silicon nitride compound is presented. A starting solution comprising fluorosilicic acid is provided. The starting solution is derived from a silicon, etching process wherein silicon is etched with a solution comprising hydrofluoric acid and where silicon powder has been removed. The starting solution is heated to yield a vapor solution comprising silicon tetrafluoride, hydrogen fluoride, and water. The hydrogen fluoride is separated from the vapor solution wherein a pure stream of silicon tetrafluoride and water vapor remain. The silicon tetrafluoride and water vapor are hydrolyzed to yield a concentrated fluorosilicic acid solution. The fluorosilicic acid is reacted with a base to yield a fluorosilicic salt. The fluorosilicic salt is heated to yield anhydrous silicon tetrafluoride. The anhydrous silicon tetrafluoride is reacted with a metal hydride to yield a monosilane. The monosilane is reacted to form a silicon compound and a silicon nitride compound.

Abstract: The invention provides a nanoporous non-oxide material which comprises a modified derivative of silicon nitride and comprises a plurality of nanoscale pores. The nanoporous non-oxide material is preferably prepared by means of a sol-gel procedure and preferably comprises a metal-containing derivative of silicon nitride [SiN4], silicon oxynitride [Si2N2O] or silicon imidonitride [Si3N4-2x(NH)3x] which contains a Group III metal or a transition metal. The nanoporous non-oxide material also additionally comprises surface modifications. The invention also provides for the use of the nanoporous non-oxide material in the manufacture of selective gas filters for solid state gas sensors and catalysts for chemical reactions.

Abstract: The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi1.02-2.00. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2 film, and to the manufacturing method thereof.

Abstract: A method for processing iron disilicide for manufacture photovoltaic devices. The method includes providing a first sample of iron disilicide comprising at least an alpha phase entity, a beta phase entity, and an epsilon phase entity. The method includes maintaining the first sample of iron disilicide in an inert environment and subjects the first sample of iron disilicide to a thermal process to form a second sample of iron disilicide. The second sample of iron disilicide comprises substantially beta phase iron disilicide and is characterized by a first particle size. The method includes introducing an organic solvent to the second sample of iron disilicide, forming a first mixture of material comprising the second sample of iron disilicide and the organic solvent. The method processed the first mixture of material including the second sample of iron disilicide using a grinding process.

Abstract: Disclosed are organometallic compounds derived from Groups VIIb, VIII, IX, and X metals useful as precursors for the formation of metal containing powders and for the chemical deposition of the metals on substrates, particularly for the chemical vapor deposition of metal films suitable for the manufacture of electronic devices. Methods for their use are also disclosed.

Abstract: The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

Abstract: To provide: a production method using a catalyst which can substantially suppress leaching of active metal components and exhibit high activity for both reactions of transesterification of glycerides and esterification of free fatty acids each contained in a fat or oil; and the catalyst.

Abstract: A ceramic composite made by compacting a starting powder blend. The composite includes between about 50 volume percent and about 99 volume percent of a ceramic matrix; and between about 1 volume percent and about 50 volume percent as-processed silicon carbide whiskers. The ceramic composite having a fracture toughness (KIC) of greater than about 4.0 MPam1/2. The ceramic has a silicon carbide whisker density as measured in whiskers per square millimeter equal to or less than about 1500 times the volume percent of silicon carbide whiskers, but in a density sufficient for the ceramic composite to have the fracture toughness.

Abstract: A process for producing a silicon nitride compound is presented. A starting solution comprising fluorosilicic acid is provided. The starting solution is derived from a silicon, etching process wherein silicon is etched with a solution comprising hydrofluoric acid and where silicon powder has been removed. The starting solution is heated to yield a vapor solution comprising silicon tetrafluoride, hydrogen fluoride, and water. The hydrogen fluoride is separated from the vapor solution wherein a pure stream of silicon tetrafluoride and water vapor remain. The silicon tetrafluoride and water vapor are hydrolyzed to yield a concentrated fluorosilicic acid solution. The fluorosilicic acid is reacted with a base to yield a fluorosilicic salt. The fluorosilicic salt is heated to yield anhydrous silicon tetrafluoride. The anhydrous silicon tetrafluoride is reacted with a metal hydride to yield a monosilane. The monosilane is reacted to form a silicon compound and a silicon nitride compound.

Abstract: A method for preparing a high-pressure phase cubic spinel-type silicon nitride includes housing a molding containing low-pressure phase silicon nitride powder and a metal powder in a cylindrical container, arranging an explosive in the cylindrical container so as to surround the molding, and exploding the explosive to compress the molding. An X-ray diffraction pattern of the high-pressure phase cubic spinel-type silicon nitride produced according to the method of the present invention shows a maximum peak having a full width at half maximum of 0.65 degrees or less. TG-DTA analysis of the cubic spinel-type silicon nitride shows a weight change starting temperature of 700 to 1100° C.

Abstract: The present invention relates to silicon nitride mould parts, particularly crucibles for use in connection with directional solidification and pulling of silicon single crystals. The mould parts consist of Si3N4 having a total open porosity between 40 and 60% by volume and where more than 50% of the pores in the surface of the mould parts have a size which is larger than the means size of the Si3N4 particles. The invention further relates to a method for producing the silicon nitride mould parts.

Abstract: Various embodiments of the present invention are directed to methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures. In one embodiment of the present invention, a method of fabricating nanowires is disclosed. In the method, a number of nanowire-precursor members are formed. Each of the nanowire-precursor members includes a substantially single-crystal silicon region and a polycrystalline- metallic region. The substantially single-crystal silicon region and the polycrystalline-metallic region of each of the nanowire-precursor members is reacted to form corresponding substantially single-crystal metal-silicide nanowires. In another embodiment of the present invention, a nanowire structure is disclosed. The nanowire structure includes a substrate having an electrically insulating layer. A number of substantially single-crystal metal-silicide nanowires are positioned on the electrically insulating layer.

Abstract: A densified silicon nitride body can be formed using a lanthana-based sintering aid. The composition may exhibit properties that provide a material useful in a variety of applications that can benefit from improved wear characteristics. The composition may be densified by sintering and hot isostatic pressing.

Abstract: A method is provided for growing Si—Ge materials on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe2, SiGe3 and SiGe4. New hydrides with direct Si—Ge bonds derived from the family of compounds (H3Ge)xSiH4-x (x=1-4) are used to grow uniform, relayed and highly planar films with low defect densities at unprecedented low temperatures between about 300-450° C., circumventing entirely the need of thick compositionally graded buffer layer and lift off technologies. At about 500-700° C., SiGex quantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides precise control of morphology, composition, structure and strain via the incorporation of the entire Si/Ge framework of the gaseous precursor into the film.

Abstract: Dendron ligands or other branched ligands with cross-linkable groups were coordinated to colloidal inorganic nanoparticles, including nanocrystals, and substantially globally cross-linked through different strategies, such as ring-closing metathesis (RCM), dendrimer-bridging methods, and the like. This global cross-linking reaction sealed each nanocrystal within a dendron box to yield box-nanocrystals which showed dramatically enhanced stability against chemical, photochemical and thermal treatments in comparison to the non-cross-linked dendron-nanocrystals. Empty dendron boxes possessing a very narrow size distribution were formed by the dissolution of the inorganic nanocrystals contained therein upon acid or other etching treatments.

Abstract: A high temperature non-aqueous synthetic procedure for the preparation of substantially monodisperse IV-VI semiconductor nanoparticles is provided. The procedure includes introducing a first precursor selected from the group consisting of a molecular precursor of a Group IV element and a molecular precursor of a Group VI element into a reaction vessel that comprises at least an organic solvent to form a mixture. Next, the mixture is heated and thereafter a second precursor of a molecular precursor of a Group IV element or a molecular precursor of a Group VI element that is different from the first is added. The reaction mixture is then mixed to initiate nucleation of IV-VI nanocrystals and the temperature of the reaction mixture is controlled to provide nanoparticles having a diameter of about 20 nm or less.

Abstract: A producing method of a porous Si3N4 having high porosity and formed of Si3N4 particles having a high aspect ratio includes the following steps. A compound of a rare earth element as a first sintering agent is mixed in an amount of 7.5–45 parts by mass, in terms of an oxide of the element, with respect to 100 parts by mass of Si powder to obtain mixed powder. A binder is added to the mixed powder, which is then molded into a molded body. The molded body is heated in a nitrogen atmosphere to 300–500° C. to remove the binder. The binder-removed body is heated in a nitrogen atmosphere to 1350–1500° C. for nitriding. The nitrided body is then sintered at 1750–1900° C. at a nitrogen pressure of 0.1–1 atmosphere.

Abstract: A method of manufacturing a powder, by which it is possible to adjust the strength of the obtained powder is provided. The manufacturing method of a powder involves a step of preparing a slurry containing agglomerated particles of a synthetic material which is produced by reacting a first material and a second material under agitation, and a step of drying the slurry to obtain a powder of the synthetic material. The method has a feature that the particle size of the agglomerated particles is adjusted by, in the step of preparing a slurry, controlling agitation power for agitating the slurry. In the step of preparing a slurry, it is preferable that the slurry is initially agitated at a first agitation power, and at the time when the viscosity of the slurry approaches its maximum value, or at the time when the pH value of the slurry reaches the vicinity of the isoelectric point of the synthetic material, the agitation power is lowered from the first agitation power to a second agitation power.

Abstract: A silicon wafer wherein stacking fault (SF) nuclei are distributed throughout the entire in-plane direction, and the density of the stacking fault nuclei is set to a range of between 0.5×108 cm?3 and 1×1011 cm?3.

Abstract: A large amount of spinel type silicon nitride powders of a high-pressure phase is produced by mixing raw powders having a particle size of 10 ?m or less of ?-, ?- or amorphous silicon nitride, each of which is a low pressure phase, with non-nitrified metal powders at a ratio of 50 weight % or more, preferably copper powders with a particle size of 100 ?m or less, forming a compact with porosity of 50% or less and 10% or more, preferably around 30%, by pressing mixture powders obtained, and subjecting the compact to shock wave compression treatment at a pressure of 20 GPa or more, preferably around 60 GPa.

Abstract: A porous molybdenum disilicide-based material prepared by preheating a preform consisting of size-controlled molybdenum (Mo) powder and content-controlled silicon (Si) powder and igniting the preform to initiate self-propagating high temperature synthesis, and a method for preparing the same, are disclosed. The method comprises the steps of a) mixing molybdenum (Mo) powder and silicon (Si) powder in the stoichiometric ratio of 1:2; b) molding the mixed powder into a preform; c) preheating the preform under inert atmosphere; and d) igniting the top end of the preheated perform. The porous molybdenum disilicide-based material can control its pore size by appropriately controlling the size of molybdenum (Mo) powder, the content of silicon (Si) powder and preheating condition. Therefore, since the pore size gradient of the porous material is possible to form, the porous material can be used for filters with improved dirt-holding capacity.

Abstract: A method of continuously producing a non-oxide ceramic formed of a metal constituent and a non-metal constituent. A salt of the metal constituent and a compound of the non-metal constituent and a compound of the non-metal constituent are introduced into a liquid alkali metal or a liquid alkaline earth metal or mixtures to react the constituents substantially submerged in the liquid metal to form ceramic particles. The liquid metal is present in excess of the stoichiometric amount necessary to convert the constituents into ceramic particles to absorb the heat of reaction to maintain the temperature of the ceramic particles below the sintering temperature. Ceramic particles made by the method are part of the invention.

Abstract: An apparatus is provided for synthesis and collection of higher order chemical compounds from lower order precursors. The apparatus includes a first silent electric discharge reactor configured to synthesize an intermediate product (e.g., disilane) from a precursor chemical (e.g., monosilane). A second silent electric discharge reactor is connected downstream of the first reactor. This second reactor is configured to convert the intermediate product into the higher order chemical compound (e.g., trisilane). Multiple condensation traps are also connected to receive effluent from the second reactor, which will generally include the compound of interest as well as unreacted precursor and intermediate product. In the illustrated embodiment, a parallel second condensation traps is also included to shunt flow and continue collection while the chemical of interest is removed for purification.

Abstract: The invention relates to a supported catalyst and the production and use thereof in the synthesis of vinyl acetate in the gaseous phase from ethylene, acetic acid and oxygen, or from gases containing oxygen, whereby the activity and selectivity are simultaneously improved. The catalyst contains palladium, at least one alkali metal compound and optionally one or more catalyst accelerators, in particular, gold, barium and/or cadmium on a porous support. Said support contains at least one reducible metal oxide, in particular oxides of the elements of groups IIIb, IVb, Vb, VIb from the periodic table of elements. Once the support has been loaded with at least one palladium compound, a reduction is carried out at a temperature of >200° C.

Abstract: A transition metal-containing ceramic made by the process comprising the step of pyrolyzing an organometallic linear polymer containing at least one metallocenylene unit, at least one silyl or siloxyl unit, and at least one acetylene unit to form a ceramic; where the ceramic has a ceramic yield of at least about 75% by weight. A transition metal-containing ceramic made by the process comprising the steps of: forming an organometallic linear polymer containing at least one metallocenylene, at least one silyl or siloxyl unit, and at least one acetylene unit; crosslinking said linear polymer through the acetylene units, thereby forming a thermoset; and pyrolyzing said thermoset to form a ceramic; where the ceramic has a ceramic yield of at least about 75% by weight.

Abstract: A continuous flow chemical reaction apparatus comprises a tubular reactor having a length and having a first fluid reactant inlet at a first end and a product outlet at a second end, said tubular reactor having a central tube/interior conduit extending lengthwise within said tubular reaction zone, said conduit having at least one injector within the length of said conduit, said injector capable of introducing a controlled amount of a second fluid reactant into said tubular reactor.

Abstract: The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi1.02-2.00. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2 film, and to the manufacturing method thereof.

Abstract: A method of continuously producing a non-oxide ceramic formed of a metal constituent and a non-metal constituent. A salt of the metal constituent and a compound of the non-metal constituent and a compound of the non-metal constituent are introduced into a liquid alkali metal or a liquid alkaline earth metal or mixtures to react the constituents substantially submerged in the liquid metal to form ceramic particles. The liquid metal is present in excess of the stoichiometric amount necessary to convert the constituents into ceramic particles to absorb the heat of reaction to maintain the temperature of the ceramic particles below the sintering temperature. Ceramic particles made by the method are part of the invention.

Abstract: An oxynitride phosphor activated by a rare earth element, represented by the formula CaxSi12−(m+n)Al(m+n)OnN16−n: EuyDyz, wherein stabilizing metal (Ca) is substituted partially by Eu or Eu and Dy where 0.3<x<1.5, 0.01<y<0.7, 0≦z<0.1, 0.6<m<3.0 and 0<n<1.5.

Abstract: A process for producing silicon tetrafluoride includes reacting at 250° C. or higher elemental silicon with hydrogen fluoride, thereby producing a gas product containing silicon tetrafluoride. This reaction can be conducted such that the gas product contains at least 0.02 volume % of the unreacted hydrogen fluoride. The process may further include bringing the gas product into contact with elemental nickel at a temperature of 600° C. or higher. Alternatively, the process may further include adding at least 0.1 volume % of hydrogen fluoride to the gas product to prepare a gas mixture; and bringing the gas mixture into contact with elemental nickel at a temperature of 400° C. or higher.