Abstract: The invention relates to a method for producing silicon by reacting silicon oxide at an elevated temperature, silicon carbide and, optionally, a second carbon source being added to the reaction mixture. The invention further relates to a composition that can be used in the disclosed method. The essential part of the invention is the use of silicon carbide as a reaction initiator and/or reaction accelerator during the production of silicon or, alternatively, in nearly equimolar amounts for the production of silicon.

Abstract: An improved process for producing a silicon carbide ceramic micro tubes (SiC micro tube) from a silicon-based polymer fiber by applying an ionizing radiation such that the surface part of the fiber selectively undergoes oxidative crosslinking, extracting the uncrosslinked core part of the fiber with an organic solvent to form a hollow fiber, and firing it in an inert gas is characterized by using a polymer blend of polycarbosilane and polyvinylsilane as the silicon polymer or applying the ionizing radiation to the silicon-based polymer fiber as it is cooled. The two methods may be performed either individually or in combination to produce tubes with their wall thickness controlled at a desired value in the range of 2-10 ?m although this has been impossible to achieve in the prior art.

Abstract: A method for manufacturing a diamond composite, includes: a) mixing diamonds with additives, the mixture comprising at least 50 wt % and less than 95 wt % of diamonds and more than 5 wt % additives; b) forming a work piece from the mixture using a pressure of at least 100 Mpa; c) heating the formed work piece to at least 300° C. for removing possible water and wholly or partially removing additives; d) heating the work piece and controlling the heating temperature and heating time so that a certain desired amount of graphite is created by graphitization of diamonds, wherein the amount of graphite created by graphitization is 3-50 wt % of the amount of diamond; e) infiltrating silicon or silicon alloy into the work piece.

Abstract: A process for producing porous silicon carbide comprising mixing particles of silicon carbide reactant with particles of carbon, and calcining the mixture in an atmosphere comprising molecular oxygen at a temperature in excess of 950° C., wherein the silicon carbide:carbon mass ratio in the mixture is in the range of from 5:1 to 1:10.

Abstract: Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about ?600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of SixByCz, SixByNz, SixByCzNw, BxCy, and BxNy. In some embodiments, a hardmask film includes a germanium-rich GeNx material comprising at least about 60 atomic % of germanium. These hardmasks can be used in a number of back-end and front-end processing schemes in integrated circuit fabrication.

Abstract: The invention relates to a chemical reactor with a nanometric superstructure, comprising at least one member wherein at least one reaction chamber is arranged, and said reaction chamber being filled at least partially with a high specific surface area material having a specific surface area greater than 5 m2/g, and characterised in that said high specific surface area material is selected from nanotubes or nanofibres. These nanotubes or nanofibres are preferably selected in the group consisting of carbon nanofibres or nanotubes, ?-SiC nanofibres or nanotubes, TiO2 nanofibres or nanotubes. They may be deposited on an intermediate structure selected in the group consisting of glass fibres, carbon fibres, SiC foams, carbon foams, alveolar ?-SiC foams, said intermediate structure filling the reaction chamber of said reactor at least partially.

Abstract: A method of manufacturing a silicon carbide powder with submicron size of powder particles wherein a homogeneous reactant mixture comprising a source of silicone, a source of carbon, and polytetrafluoroethylene is locally preheated in a sealed reaction chamber filled with an inert gas under pressure of 20 atm to 30 atm to a temperature sufficient to initiate an exothermic self-propagating reaction ranges from 650K to 900K. In the aforementioned homogeneous reactant mixture, the carbon source is used in the amount from 63 wt % to 68%, the silicon source is used in the amount of from 20 wt. % to 25 wt. %%, and the activated additive is used in the amount of from 8 wt. % to 15 wt. % per 100% of the entire homogeneous reactant mixture.

Abstract: A process for converting precursor objects into a unitary ceramic object produces, for example, a ceramic, optical scan mirror that is formed from at least two pieces. An optical section has at least one optical surface and at least one attachment surface, and a support section has at least one attachment surface and preferably has a mounting area. The optical and support sections are formed as separate pieces from a precursor material, such as graphite, such that a selected support section can receive any of a plurality of optical sections having different sizes, shapes, or orientations. To form the mirror, the attachment surfaces are placed adjacent each other, and then the sections are converted simultaneously to a ceramic material, such as silicon carbide, to form a monolithic scan mirror.

Abstract: Fullerene-capped Group IV nanoparticles, materials and devices made from the nanoparticles, and methods for making the nanoparticles are provided. The fullerene-capped Group IV nanoparticles have enhanced electron transporting properties and are well-suited for use in photovoltaic, electronics, and solid-state lighting applications.

Abstract: A silicon carbide bulk single crystal is produced at a growth temperature of up to 2200° C. by sublimation growth and is subjected to thermal aftertreatment after the sublimation growth. The bulk single crystal is brought to an aftertreatment temperature that is higher than a growth temperature. Very low-stress and low-dislocation SiC substrates can be produced from such a SiC bulk single crystal, the substrates additionally having a particularly low electrical resistivity. The SiC bulk single crystal is positioned within an SiC powder before the thermal aftertreatment and it is completely surrounded by the SiC powder during the thermal aftertreatment.

Abstract: A method for preparing ordered mesoporous silicon carbide (OMSiC) nanocomposites uses an evaporation-induced self-assembly of a precursor composition that preferably includes a phenolic resin, pre-hydrolyzed tetraethyl orthosilicate, a surfactant, and butanol. The precursor mixture is dried, cross-linked and heated to form ordered mesoporous silicon carbide material having discrete domains of ordered, mesoscale pores.

Abstract: A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 ?s and about 9.9 ?s.

Abstract: Methods, systems, and apparatus are disclosed herein for recovery of high-purity silicon, silicon carbide and PEG from a slurry produced during a wafer cutting process. A silicon-containing material can be processed for production of a silicon-rich composition. Silicon carbide and PEG recovered from the silicon-containing material can be used to form a wafer-saw cutting fluid. The silicon-rich composition can be reacted with iodine containing compounds that can be purified and/or used to form deposited silicon of high purity. The produced silicon can be used in the photovoltaic industry or semiconductor industry.

Abstract: Precursor materials and methods of making are disclosed. The precursor materials include at least one of a silica source, and a carbon source, with or without liquid and a binder The methods described include pyrolyzing the precursor material to form a carbonaceous mixture and heat treating the mixture for a pre-determined time and at an elevated temperature during which carbon and/or nitrogen react with silica in the mixture to form carbides and/or nitrides. The carbides and nitrides formed from said methods may be used as blowing agents in a glass, ceramic, or metal forming processes or for promoting dispersion of the carbides and nitrides throughout a glass, ceramic, or metal composite.

Abstract: A method of forming a powder and/or discrete gel particles of a compound selected from the group of a metallic oxide, a metalloid oxide, a mixed oxide, an organometallic oxide, an organometalloid oxide, an organomixed oxide resin, and/or an organic resin from one or more respective organometallic precursor(s), organometalloid precursor(s) and/or organic precursors and mixtures thereof, comprising the steps of passing a gas into a means for forming excited and/or unstable gas species (1a), typically an atmospheric plasma generating means; treating said gas such that upon leaving said means the gas comprises excited and/or unstable gas species which are substantially free of electrical charges at a temperature of between 10° C. and 500° C. A gaseous and/or liquid precursor is then introduced (50a,50b) into said excited and unstable gas species in a downstream region external (20) to the means for forming excited and/or unstable gas.

Abstract: Silicon-containing products, such as silicon, silicon carbide and silicon nitride, containing less than 0.01 weight percent total mineral impurities and selectively determined carbon-to-silicon ratios. The products are derived from plant matter, such as rice hulls and rice straw, containing at least three weight percent silica. Methods are provided for making such high purity silicon-containing products by leaching silica-containing plant matter with aqueous sulfuric acid under controlled temperatures, pressures and reaction times to remove minerals and metals while adjusting the mole ratio of fixed carbon to silica, and then thermally treating under controlled conditions to produce the desired product.

Abstract: Method for treatment of workpieces of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the following steps: Preheating of porous carbon workpieces under an inert gas to a selected operating temperature TB1, delivery of liquid silicon to the porous carbon workpieces at an operating pressure pB2 and an operating temperature TB2 and impregnation of the porous carbon workpieces with liquid silicon, reaction of the liquid silicon in the workpiece at a temperature TB3 with formation of silicon carbide from carbon and silicon, gassing of the workpieces with inert gas, and cooling from the operating temperature TB3 to a conditioning temperature Tk, cooling of workpieces to room temperature, in step c the delivery of silicon and transport of the workpieces taking place over preferably cylindrical rolls which are porous at least in the exterior region and which are pivoted, and their speed of rotation determining the residence time for the delivery of silicon in step c, and t

Abstract: The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm?3; donor impurities that are in a concentration less than 1×1019 cm?3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm?3 and donor impurities that are in a concentration less than 1×1019 cm?3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

Abstract: Oil sand or other naturally occurring oil-containing mixtures are used to produce SiC and/or Si3N4. In a subsequent step, the Si3N4 is employed to produce ammonia (NH3).

Abstract: Single-crystal silicon carbide nanowires and a method for producing the nanowires are provided. The single-crystal silicon carbide nanowires have a very high aspect ratio and can be used for the fabrication of nanoelectronic devices, including electron gun emitters and MEMS probe tips, for use in a variety of displays and analyzers. Further provided is a filter comprising the nanowires. The filter is applied to systems for filtering vehicle engine exhaust gases to achieve improved filtering performance and increased lifetime.

Abstract: The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom. It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×1018 cm?3 to 6×1020 cm3 and acceptor-type impurity at a concentration of 1×1018 cm?3 to 5.99×1020 cm?3 and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×1018 cm?3 to 5.99×1020 cm?3, and a substrate and epitaxial wafer obtained therefrom.

Abstract: Silicon and silicon carbide (SiC) are recovered from kerf loss slurries using two-staged particle phase-transfer method. In the first stage, first sample, which is prepared from kerf loss slurries with silicon content being higher than SiC content, is mixed with water and oil to form first mixture, which is settled to form a water and an oil phase. The first product obtained by centrifugation from water phase has a high Si content. In the second stage, the first product is mixed with water and another oil to form the second mixture which is separated thereby to obtain the second product from water phase. The second product is the preferred silicon powder. Besides, another product, i.e. recovered SiC, is obtained by centrifugation from oil phase of the first stage. Furthermore, if silicon content is lower than SiC content, the first stage is repeated using the first product.

Abstract: Various embodiments of the present invention are directed to methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures. In one embodiment of the present invention, a method of fabricating nanowires is disclosed. In the method, a number of nanowire-precursor members are formed. Each of the nanowire-precursor members includes a substantially single-crystal silicon region and a polycrystalline-metallic region. The substantially single-crystal silicon region and the polycrystalline-metallic region of each of the nanowire-precursor members is reacted to form corresponding substantially single-crystal metal-silicide nanowires. In another embodiment of the present invention, a nanowire structure is disclosed. The nanowire structure includes a substrate having an electrically insulating layer. A number of substantially single-crystal metal-silicide nanowires are positioned on the electrically insulating layer.

Abstract: A liquid mixture is prepared by using a liquid phenolic resin (PL-2818) serving as a carbon source. While an inert gas is introduced into the liquid mixture, a released gas is discharged. Then, the liquid mixture is dried in a reduced-pressure atmosphere, and thereby the nitrogen dissolved in the liquid mixture can be reduced. In this way, the amount of nitrogen content after burning can be reduced.

Abstract: The present disclosure relates to a method of preparing silicon carbon nanocrystals (SiC-NCs) in a size-dependent manner by reacting a compound of the Formula I: R1Si(X1)3, with a compound of the Formula II Si(X2)4(II) under conditions for the hydrolysis and condensation of the compound of the Formula I and the compound of the Formula II to form a siloxane polymer comprising repeating units of the Formula III: —[(R1SiO1.5)x(SiO2)y]—, followed by thermal processing of the siloxane polymer under conditions to form SiC-NC's. Optionally the SiC-NC's are liberated to provide free standing SiC-NC's.

Abstract: A method of manufacturing silicon carbide including reacting, in a temperature range of 370 to 800° C., (A) one selected from the group consisting of an alloy containing at least an Si element and one or more kinds of transition metal elements, a mixture containing metal silicon powder and transition metal powder, and a mixture of metal silicon powder and a transition metal compound with (B) one or more kinds of substituted or unsubstituted hydrocarbons selected from the group consisting of a chain saturated hydrocarbon, a chain unsaturated hydrocarbon, a cyclic saturated hydrocarbon, an alcohol, and an aromatic hydrocarbon. The manufacturing method can provide a sufficient conversion ratio from raw materials at low temperatures and powdery silicon carbide having a small particle size and small amounts of impurities.

Abstract: The crude oil reserves have a calculable time limit. Starting materials containing silicon dioxide are preferably used as raw materials.

Abstract: A method according to the invention comprises: starting plasma discharge for forming the gas barrier layer in a film deposition chamber; and producing the gas barrier layer by using a plasma after a first predetermined period of time has elapsed from a start of the plasma discharge.

Abstract: Thermally stable diamond-bonded compacts include a diamond-bonded body having a thermally stable region extending a distance below a diamond-bonded body surface. The thermally stable region comprises a matrix first phase of bonded together diamond crystals, and a second phase interposed within the matrix phase. At least some population of the second phase comprises a reaction product formed between an infiltrant material and the diamond crystals at high pressure/high temperature conditions. The diamond bonded body further includes a polycrystalline diamond region that extends a depth from the thermally stable region and has a microstructure comprising a polycrystalline diamond matrix phase and a catalyst material disposed within interstitial regions of the matrix phase. The compact includes a substrate attached to the diamond-bonded body.

Abstract: The present invention provides a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 ?cm or more, and a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 ?cm or more and vacancy pairs (bivacancies), and an semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 ?cm or more and containing a crystal region where a position average lifetime becomes a lifetime longer than 155 ps in measurement of position lifetime at a liquid nitrogen boiling point temperature (77K) or less, and wafer obtained therefrom.

Abstract: The production of ultrafine metal carbide powders from polymeric powder and metallic precursor powder starting materials is disclosed. In certain embodiments, the polymeric powder may comprise polypropylene, polyethylene, polystyrene, polyester, polybutylene, nylon, polymethylpentene and the like. The metal precursor powder may comprise pure metals, metal alloys, intermetallics and/or metal-containing compounds such as metal oxides and nitrides. In one embodiment, the metal precursor powder comprises a silicon-containing material, and the ultrafine powders comprise SiC. The polymeric and metal precursor powders are fed together or separately to a plasma system where the feed materials react to form metal carbides in the form of ultrafine particles.

Abstract: Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which comprise a first element, with a catalyst. The catalyst and the first element should form when heated a liquid, mixed phase having a eutectic or peritectic point. The granules, which have been coated with the catalyst, can then be heated to a temperature greater than or equal to the eutectic or peritectic point. During heating, a vapor source comprising the second element is introduced. The vapor source chemically interacts with the liquid, mixed phase to consume the first element and to induce condensation of a product that comprises the first and second elements in the form of a nanowire.

Abstract: A growing method of a SiC single crystal includes the steps of thermal treatment of a high purity SiC source for decreasing a specific surface area and increasing a ratio of ?-phase and making a mole fraction of C greater than that of Si in the source, providing the SiC source into a crucible, arranging a SiC seed in the crucible, and growing the SiC single crystal by heating the SiC source.

Abstract: A method for treating workpieces that consist of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the steps: Preheating porous carbon workpieces under inert gas to the selected operating temperature TB1, feeding liquid silicon to the porous carbon workpieces at an operating pressure pB2 and an operating temperature TB2, and impregnating the porous carbon workpieces with liquid silicon, reaction of the liquid silicon in the workpiece at a temperature TB3 with the formation of silicon carbide that consists of carbon and silicon, gassing the workpiece with inert gas and cooling from the operating temperature TB3 to the conditioning temperature Tk, cooling the workpieces to room temperature, the temperature TB3 being greater than or equal to the temperature TB2, and the workpiece in step d of the method no longer being in contact with liquid silicon outside of the workpiece.

Abstract: Photoluminescent nanodiamond particles of dynamic synthesis have enhanced photoluminescent properties produced as a result of minimizing the nitrogen content of impurities or imperfections in the nanodiamond lattice and by location of photoluminescent structures on the outer surface of the nanodiamond particles. This inhibits suppression (i.e. inactivity) of emission and enhances the intensity of the emission. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

Abstract: This invention relates to a method of functionalizing a powdered substrate. The method comprises the following steps, which method comprises passing a gas into a means for forming excited and/or unstable gas species, typically an atmospheric pressure plasma or the like and treating the gas such that, upon leaving said means, the gas comprises excited and/or unstable gas species which are substantially free of electric charge. The gas comprising the excited and/or unstable gas species which are substantially free of electric charge is then used to treat a powdered substrate and a functionalizing precursor in a downstream region external to the means for forming excited and/or unstable gas, wherein neither the powdered substrate nor the functionalizing precursor have been subjected to steps (i) and (ii) and wherein said functionalizing precursor is introduced simultaneously with or subsequent to introduction of the powdered substrate. Preferably the method takes place in a fluidized bed.

Abstract: The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the dielectric layer comprises SiC and/or SiOC, and is obtained from at least one precursor comprising at least one —Si—C<SUB>n</SUB>-Si chain where n=l.

Abstract: A method capable of synthesizing carbon nanotubes at low cost and large quantities, an apparatus usable for carrying out the method, and carbon nanotubes densely aligned on and firmly bonded to a Si substrate over, and oriented perpendicular to, an entire surface thereof are provided. Highly oriented, aligned carbon nanotubes are synthesized from an organic liquid by forming a substrate with a buildup thereon of a thin film or fine insular particles composed of at least one metallic element; exposing the substrate (3) having the buildup to a hydrogen plasma; and heating the substrate (3) exposed to the hydrogen plasma in the organic liquid (10) to a predetermined temperature.

Abstract: A method by which ceramic nanowires with diameters ranging from several to several tens of nanometers can be synthesized with improvements in the shape retention of the nanowires and the yield of conversion to ceramic, which method comprises the steps of forming a thin film of a silicon-containing polymer usable as a ceramic precursor, irradiating the thin film with ion beams to form cylindrical crosslinked portions, extracting the un-crosslinked portions with a solvent to produce nanowires of the silicon-containing polymer, irradiating the nanowires with an ionizing radiation so that they are crosslinked again, and firing the re-crosslinked nanowires.

Abstract: The invention relates to the area of oil and gas production (especially, to the production in which the propping technique is used for the stimulation of a well) and can be used in the development of a composition and a method of production of propping agents (proppant), as well as a method of application of these propping agents. A new type of proppant, proppant production method and use of the proppant are based on allowing the production of proppant having an apparent density of 2.5 to 4.0 g/cm3, as well as a high mechanical strength and a high chemical durability. A proppant contains granules made of the sintered feedstock, wherein the charge mixture containing at least one of the following materials—silicon carbide, boron carbide, titanium carbide, silicon nitride, titanium nitride, boron nitride, silicon oxynitrides, SIALON-type compounds, was used as the feedstock.

Abstract: A water-based polishing slurry for polishing a silicon carbide single crystal, wherein the slurry comprises abrasive particles having a mean particle size of 1 to 400 nm and an inorganic acid, and the slurry has a pH of less than 2 at 20° C.

Abstract: A method for etching silicon carbide, a mask being produced on a silicon carbide layer, the unmasked areas of the silicon carbide layer being etched using a fluorine-containing compound, which is selected from the group including interhalogen compounds of fluorine and/or xenon difluoride. The use of chlorine trifluoride, chlorine pentafluoride, and/or xenon difluoride for structuring silicon carbide layers covered with masks containing silicon dioxide and/or silicon oxide carbide; a structured silicon carbide layer obtained by the method, and a microstructured electromechanical component or a microelectronic component including a structured silicon carbide layer obtained by the method.

Abstract: A by-product mixture produced when polycrystalline silicon is deposited on a base material in a CVD reactor is made to react with chlorine to form a tetrachlorosilane (STC) effluent in a chlorination reaction vessel, and the tetrachlorosilane (STC) distillate is made to react with hydrogen in a hydrogenation reaction vessel to be converted into trichlorosilane (TCS). In the chlorination step, poly-silane contained in the above described by-product mixture can be efficiently recycled as a raw material for producing the polycrystalline silicon, which can enhance a yield of the production process. In addition, in the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and reduces carbon contamination of the polycrystalline silicon.

Abstract: The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds.

Abstract: In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the crucible. The growth guide has an inner layer that defines at least part of an opening in the growth guide and an outer layer that supports the inner layer in the crucible. The opening faces the source material with the seed crystal positioned at an end of the opening opposite the source material. The inner layer is formed from a first material having a higher thermal conductivity than the second, different material forming the outer layer. The source material is sublimation grown on the seed crystal in the growth crucible via the opening in the growth guide to thereby form the SiC boule on the seed crystal.

Abstract: A method for producing ultrafine metal carbide particles and hydrogen is disclosed. The method includes introducing a metal-containing precursor and a carbon-containing precursor into a thermal reaction chamber, heating the precursors in the thermal reaction chamber to form the ultrafine metal carbide particles from the precursors and to form carbon monoxide and hydrogen, collecting the ultrafine doped metal carbide particles, converting at least a portion of the carbon monoxide to carbon dioxide and generating additional hydrogen, and recovering at least a portion of the hydrogen.

Abstract: A Si—C—O composite powder is obtained by curing a reactive silane or siloxane having crosslinkable groups through heat curing or catalytic reaction into a crosslinked product and sintering the crosslinked product in an inert gas stream at a temperature of 700-1,400° C. into an inorganic state. It exhibits satisfactory cycle performance when used as the negative electrode material for non-aqueous electrolyte secondary cells.

Abstract: A method for producing an SiC single crystal comprises providing a low temperature region and a high temperature region in a crystal growth crucible (6); disposing a seed crystal substrate formed of an SiC single crystal in the low temperature region of the crystal growth crucible; disposing an SiC raw material in the high temperature region; and depositing a sublimation gas that sublimes from the SiC raw material on the seed crystal substrate to grow the SiC single crystal. A material used in the crucible member where the seed crystal is disposed is a material having a room-temperature linear expansion coefficient that differs from that of SiC by 1.0×10?6/K or less, and the crucible member where the seed crystal is disposed is made of Sic.

Abstract: Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.

Abstract: A method for producing carbon-silica products from silica-containing plant matter such as rice hulls or straw by leaching with sulfuric acid to remove non-silica minerals and metal while adjusting the mole ratio of fixed carbon to silica in the resultant product. The carbon and silica are intimately mixed on a micron or submicron scale and are characterized by high purity and reactivity, small particle size, high porosity, and contain volatile carbon that can be used as a source of energy for the production of silicon-containing products from the carbon-silica products. High purity silicon-containing products made from the carbon-silica products of the invention are also disclosed.