Abstract: Methods, systems, and apparatus are disclosed herein for recovery of high-purity silicon, silicon carbide and PEG from a slurry produced during a wafer cutting process. A silicon-containing material can be processed for production of a silicon-rich composition. Silicon carbide and PEG recovered from the silicon-containing material can be used to form a wafer-saw cutting fluid. The silicon-rich composition can be reacted with iodine containing compounds that can be purified and/or used to form deposited silicon of high purity. The produced silicon can be used in the photovoltaic industry or semiconductor industry.

Abstract: A friction disc (2) with an anti-abrasion layer (1) and integrated wear indication, the friction disc (2) having a friction surface (2?) which is completely covered by the anti-abrasion layer (1). At least one indication surface element (3) which occupies a part of the friction surface (2?) and differs from at least one of the components friction surface (2?) and anti-abrasion layer (1) of the friction disc (2) in at least one of the features coloring and texture is provided between the anti-abrasion layer (1) and the friction disc (2). Compositions of the anti-abrasion layer (1) of the friction disc (2).

Abstract: The invention relates to a method for producing a polysilane-polycarbosilane copolymer solution from which a ceramic material having a ratio of silicon to carbon in the range of 0.8:1.0 to 1.1:1.0 can be obtained after removal of the solvent and pyrolysis, comprising the following steps: generating a chloric raw polysilane/oligosilane containing hydrocarbon groups by means of disproportioning a methylchlorodisilane or a mixture of a plurality of methylchlorodisilanes of the composition Si2MenCl6-n, where n=1-4, wherein the disproportioning takes place by means of a Lewis base as a catalyst, thermally post-cross-linking the raw polysilane/oligosilane into a non-melting polysilane-polycarbosilane copolymer that is soluble in a neutral solvent, and producing said solution by means of dissolving the polysilane-polycarbosilane in a neutral solvent.

Abstract: A method of manufacturing a silicon carbide ingot having highly uniform characteristics includes a preparation step of preparing a base substrate made of single crystal silicon carbide and having an off angle of 0.1° or more and 10° or less in an off angle direction which is either a <11-20> direction or a <1-100> direction relative to a (0001) plane, and a film formation step of growing a silicon carbide layer on a surface of the base substrate. In the film formation step, a region having a (0001) facet 5 is formed on a surface of the grown silicon carbide layer at an end portion on an upstream side, the upstream side being a side where an angle of intersection between a <0001> direction axis of the base substrate and the surface of the base substrate in the off angle direction is an acute angle.

Abstract: There are provided a silicon carbide powder for silicon carbide crystal growth and a method for producing the silicon carbide powder. The silicon carbide powder is formed by heating a mixture of a silicon small piece and a carbon powder and thereafter pulverizing the mixture, and is substantially composed of silicon carbide.

Abstract: In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the crucible. The growth guide has an inner layer that defines at least part of an opening in the growth guide and an outer layer that supports the inner layer in the crucible. The opening faces the source material with the seed crystal positioned at an end of the opening opposite the source material. The inner layer is formed from a first material having a higher thermal conductivity than the second, different material forming the outer layer. The source material is sublimation grown on the seed crystal in the growth crucible via the opening in the growth guide to thereby form the SiC boule on the seed crystal.

Abstract: This invention provides a lithium-oxygen or lithium-air electrochemical cell comprising a negative electrode, an electrolyte, and a porous activated positive electrode comprising lithium-rich electrocatalytic materials suitable for use in lithium-oxygen (air) cells and batteries. The activated positive electrode is produced by activating a precursor electrode formed from a material comprising one or more metal oxide compounds of general formula xLi2O.yMOz, in which 0<x?4, 0<y?1, and 0<z?3, in which M is typically, but not exclusively, a transition metal, excluding Li2MnO3 as a sole metal oxide compound in the precursor electrode. Li2O is extracted from the above-mentioned precursors to activate the electrode either by electrochemical methods or by chemical methods. The invention extends to batteries containing such electrochemical cells.

Abstract: Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about ?600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of SixByCz, SixByNz, SixByCzNw, BxCy, and BxNy. In some embodiments, a hardmask film includes a germanium-rich GeNx material comprising at least about 60 atomic % of germanium. These hardmasks can be used in a number of back-end and front-end processing schemes in integrated circuit fabrication.

Abstract: Each of first and second material substrates made of single crystal silicon carbide has first and second back surfaces, first and second side surfaces, and first and second front surfaces. The first and second back surfaces are connected to a supporting portion. The first and second side surfaces face each other with a gap interposed therebetween, the gap having an opening between the first and second front surfaces. A closing portion for closing the gap over the opening is formed. A connecting portion for closing the opening is formed by depositing a sublimate from the first and second side surfaces onto the closing portion. The closing portion is removed. A silicon carbide single crystal is grown on the first and second front surfaces.

Abstract: A method of forming a ?-SiC material or coating by mixing SiO2 with carbon and heating the mixture in vacuum wherein the carbon is oxidized to CO gas and reduces the SiO2 to SiO gas and reacting a carbon material with the SiO gas at a temperature in the range of 1300 to 1600° C. resulting in a SiC material or a SiC coating on a substrate. Also disclosed is the related SiC material or coating prepared by this method.

Abstract: It is an object of the invention to provide a ceramic sintered body that has a dense structure and minimal cracking and that exhibits excellent sliding properties even in a non-lubricated state, as well as a process for its production and sliding parts that employ the same. According to a preferred mode, the sintered body of the invention comprises silicon carbide as the parent material and further contains a solid lubricant A with a mean particle size of no greater than 5 ?m and a solid lubricant B with a mean particle size of 10-70 ?m.

Abstract: A novel polycrystalline stoichiometric fine SiC fiber substantially free of impurities is produced using a novel pre-ceramic polymer. The pre-ceramic polymer is prepared by reacting a mixture of chlorodisilane, boron trichloride, and a vinyl chlorodisilane with an excess of hexamethyldisilazane to form the pre-ceramic polymer resin, which may then be melt-spun, cured, pyrolyzed and heat-treated to obtain the finished SiC fiber. The manufacturing process for the production of the fine SiC ceramic fiber allows for flexibility with respect to cross-linking, in that low-cost thermal treatments may replace more complex methods, while obtaining fibers with improved materials properties as compared to currently available SiC fibers.

Abstract: A method is disclosed with provides stable growth of SiC single crystals, particularly 4H—SiC single crystals, with an effective crystal growth rate for a prolonged time even at a low temperature range of 2000° C. or lower. A raw material containing Si, Ti and Ni is charged into a crucible made of graphite and heat-melted to obtain a solvent. At the same time, C is dissolved out from the crucible into the solvent to obtain a melt. A SiC seed crystal substrate is then brought into contact with the melt such that SiC is supersaturated in the melt in the vicinity of the surface of the SiC seed crystal substrate, thereby allowing growth and production of an SiC single crystal on the SiC seed crystal substrate.

Abstract: In a physical vapor transport growth technique for silicon carbide a silicon carbide powder and a silicon carbide seed crystal are introduced into a physical vapor transport growth system and halosilane gas is introduced separately into the system. The source powder, the halosilane gas, and the seed crystal are heated in a manner that encourages physical vapor transport growth of silicon carbide on the seed crystal, as well as chemical transformations in the gas phase leading to reactions between halogen and chemical elements present in the growth system.

Abstract: A high-purity spherical silicon carbide powder is obtained by thermally decomposing a spherical cured silicone powder under a non-oxidizing atmosphere.

Abstract: A SiC single crystal wafer on which a good quality epitaxial film by suppressing defects derived from the wafer can be grown has an affected surface layer with a thickness of at most 50 nm and a SiC single crystal portion with an oxygen content of at most 1.0×1017 atoms/cm3. This SiC single crystal wafer is manufactured from a high purity SiC bulk single crystal obtained by the solution growth method using raw materials with an oxygen content of at most 100 ppm and a non-oxidizing atmosphere having an oxygen concentration of at most 100 ppm.

Abstract: Bodies coated with a SiC layer or with a multilayer coating system that include at least a SiC hard material layer, wherein the SiC layer consists of halogen-containing nanocrystalline 3C-SiC or a mixed layer which consists of halogen-containing nanocrystalline 3C-SiC and amorphous SiC or halogen-containing nanocrystalline 3C-SiC and amorphous carbon.

Abstract: A method of producing a silicon carbide molded item is provided. The method includes molding a curable silicone composition comprising a silicon carbide powder or a combination of a silicon carbide powder and a carbon powder into a desired shape, curing the molded curable silicone composition to yield a cured silicone molded item, and then thermally decomposing the cured silicone molded item under a non-oxidizing atmosphere. The method is capable of simply producing a high-purity silicon carbide molded item having a desired shape and dimensions.

Abstract: Disclosed herein is a high-purity carbon silicon pulverulent body manufacturing method and system. That is, a high-purity carbon silicon pulverulent body manufacturing method of the present invention includes the step of producing a mixture consisting of silicon sources and carbon sources in a mixer; and the step of synthesizing silicon carbide (SiC) pulverulent body by heating the mixture at a vacuum degree of larger than 0.03 torr and equal to and less than 0.5 torr and at a temperature of equal to or larger than 1300° C. and equal to and less than 1900° C.

Abstract: Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.

Abstract: An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material. A first SiC crystal is grown by sublimating the first source material through heating and precipitating an SiC crystal. A second source material is formed by crushing the first SiC crystal. A second SiC crystal is grown by sublimating the second source material through heating and precipitating an SiC crystal. Thus, an SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained.

Abstract: A method for the production of a ceramic substrate for a semiconductor component, includes the steps of producing paper containing at least cellulose fibers, as well as a filler to be carbonized and/or SiC, pyrolizing the produced paper, and siliconizing the pyrolyzed paper.

Abstract: A recycling and treatment method of mono silicon's cutting waste liquid, which includes the following steps: 1. treat the waste liquid with diluted hydrochloric acid, then stir into an easy-to-flow mixture; 2. heat up the mixture for solid-liquid separation, such that water and polyethylene glycol are evaporated, condensed and dehydrated to recover the polyethylene glycol, and obtain coarse solid mixture of silicon carbide and silicon; 3. obtain the secondary solid mixture of silicon carbide and silicon by secondary cleaning of the coarse solid mixture with water; 4. recycle silicon and silicon carbide by treatment with the mixed acid solution of HN03+HF. This method features simplicity, ease of operation, low cost and high recycling rate, with the overall yield of cutting waste liquid up to 26-46%; moreover, the quality of recycled products can reach or approach the standard indexes, so they can be directly used in solar battery production.

Abstract: In a method of producing a SiC crystal by sublimation, the atmosphere gas for growing a SiC crystal contains He. The atmosphere gas may further contain N. The atmosphere gas may further contain at least one type of gas selected from the group consisting of Ne, Ar, Kr, Xe, and Rn. In the atmosphere gas, the partial pressure of He is preferably greater than or equal to 40%.

Abstract: This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500° C.; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii).

Abstract: A production method of a SiC crystal includes the following steps. That is, there is prepared a production device including a crucible and a heat insulator covering an outer circumference of the crucible. A source material is placed in the crucible. A seed crystal is placed opposite to the source material in the crucible. The silicon carbide crystal is grown by heating the source material in the crucible for sublimation thereof and depositing resultant source material gas on the seed crystal. The step of preparing the production device includes the step of providing a heat dissipation portion, which is constituted by a space, between the heat insulator and an outer surface of the crucible at a side of the seed crystal.

Abstract: Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which comprise a first element, with a catalyst. The catalyst and the first element should form when heated a liquid, mixed phase having a eutectic or peritectic point. The granules, which have been coated with the catalyst, can then be heated to a temperature greater than or equal to the eutectic or peritectic point. During heating, a vapor source comprising the second element is introduced. The vapor source chemically interacts with the liquid, mixed phase to consume the first element and to induce condensation of a product that comprises the first and second elements in the form of a nanowire.

Abstract: A composition comprising at least 93% (w/w) neopentasilane; and a method of preparing neopentasilane, the method comprising treating a tetrakis-(trihalosilyl)silane with diisobutylaluminum hydride.

Abstract: An SiC ingot includes a bottom face having 4 sides; four side faces extending from the bottom face in a direction intersecting the direction of the bottom face; and a growth face connected with the side faces located at a side opposite to the bottom face. At least one of the bottom face, the side faces, and the growth face is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes.

Abstract: The invention relates to a porous, fired ceramic foam having a total porosity of between 50 and 92% and an intergranular porosity of at least 5%. In particular, the invention relates to a recrystallised silicon carbide foam.

Abstract: Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which comprise a first element, with a catalyst. The catalyst and the first element should form when heated a liquid, mixed phase having a eutectic or peritectic point. The granules, which have been coated with the catalyst, can then be heated to a temperature greater than or equal to the eutectic or peritectic point. During heating, a vapor source comprising the second element is introduced. The vapor source chemically interacts with the liquid, mixed phase to consume the first element and to induce condensation of a product that comprises the first and second elements in the form of a nanowire.

Abstract: A method of treating ceramic fibers based on metal carbide, the method including a first reagent gas heat treatment performed with at least one first reagent gas of the halogen type that chemically transforms the surface of the fiber to obtain a surface layer constituted mainly of carbon, and a second reagent gas heat treatment performed with at least one second reagent gas that eliminates the surface layer formed during the chemical transformation.

Abstract: The present invention relates to proppants which can be used to prop open subterranean formation fractions. Proppant formulations are further disclosed which use one or more proppants of the present invention. Methods to prop open subterranean formation fractions are further disclosed. In addition, other uses for the proppants of the present invention are further disclosed, as well as methods of making the proppants.

Abstract: The present disclosure describes carbon nanotube arrays having carbon nanotubes grown directly on a substrate and methods for making such carbon nanotube arrays. In various embodiments, the carbon nanotubes may be covalently bonded to the substrate by nanotube carbon-substrate covalent bonds. The present carbon nanotube arrays may be grown on substrates that are not typically conducive to carbon nanotube growth by conventional carbon nanotube growth methods. For example, the carbon nanotube arrays of the present disclosure may be grown on carbon substrates including carbon foil, carbon fibers and diamond. Methods for growing carbon nanotubes include a) providing a substrate, b) depositing a catalyst layer on the substrate, c) depositing an insulating layer on the catalyst layer, and d) growing carbon nanotubes on the substrate. Various uses for the carbon nanotube arrays are contemplated herein including, for example, electronic device and polymer composite applications.

Abstract: A method for recycling silicon carbide, comprises a filtrating step, providing a siliceous mortar with silicon carbide, silicon and a buffer, and further filtering out the buffer form the siliceous mortar to obtain a siliceous slurry; a first removing step, heating the siliceous slurry to evaporate the buffer and obtain a mixture of silicon and silicon carbide; a dissolving step, placing the mixture of silicon and silicon carbide in an alkaline solution to dissolve the silicon from the mixture of silicon and silicon carbide into the alkaline solution; and a second removing step, completely removing the alkaline solution containing dissolved silicon, in order to obtain purified silicon carbide.

Abstract: The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the dielectric layer comprises SiC and/or SiOC, and is obtained from at least one precursor comprising at least one —Si—C<SUB>n</SUB>—Si chain where n=I.

Abstract: Disclosed is: a single crystalline silicon carbide nanofiber having improved thermal and mechanical stability as well as a large specific surface area which is applicable to a system for purifying exhaust gas, silicon carbide fiber filter, diesel particulate filter having a high temperature stability and may be used in the form of nanostructures such as nanorods and nanoparticles.

Abstract: A method for producing carbon-silica products from silica-containing plant matter such as rice hulls or straw by leaching with sulfuric acid to remove non-silica minerals and metal while adjusting the mole ratio of fixed carbon to silica in the resultant product. The carbon and silica are intimately mixed on a micron or submicron scale and are characterized by high purity and reactivity, small particle size, high porosity, and contain volatile carbon that can be used as a source of energy for the production of silicon-containing products from the carbon-silica products. High purity silicon-containing products made from the carbon-silica products of the invention are also disclosed.

Abstract: The invention relates to a complete method for producing pure silicon that is suitable for use as solar-grade silicon, comprising the reduction of a silicon oxide, purified by acidic precipitation from an aqueous solution of a silicon oxide dissolved in an aqueous phase, using one or more pure carbon sources, the purified silicon oxide being obtained, in particular, by the precipitation of a silicon oxide dissolved in an aqueous phase in an acidifier. The invention also relates to a formulation containing an activator and to a device for producing silicon, a reactor and electrodes.

Abstract: In a series of reactions for power plant energy generation designed to make beneficial use of oil bearing sands, oil bearing shale and other starting materials containing silicon dioxide, the silicon dioxide starting materials are combined with a primary energy provider containing hydrocarbon to start a first reaction. During this first reaction, the silicon dioxide containing starting material is heated and crystalline silicon is produced. Then, the crystalline silicon is used in a second reaction which runs exothermically (i.e., releases heat). The heat produced from the second reaction is employed as a secondary energy to supplement the primary energy provider when heating the starting material in the first reaction and/or to supply at least one further reaction or series of reactions with the required energy, at the end of which a silicon compound is produced.

Abstract: A manufacturing method for a crystal, a crystal, and a semiconductor device capable of growing a high-quality crystal are provided. The manufacturing method for a crystal of the present invention includes the steps of: preparing a seed crystal having a frontside surface and a backside surface opposite to the frontside surface; fixing the backside surface of the seed crystal to a pedestal; and growing the crystal on the frontside surface of the seed crystal. In the step of fixing, the seed crystal is fixed to the pedestal by coating the backside surface of the seed crystal with a Si layer or disposing a Si layer on the backside surface of the seed crystal, and carbonizing the Si layer.

Abstract: Methods for fabricating silicon carbide material are disclosed. One method includes: recycling carbon dioxide (CO2) emitted from a plant; and employing the recycled carbon dioxide and silicon dioxide (SiO2) to produce the silicon carbide (SiC) material and oxygen. Another method includes: recycling a carbon dioxide (CO2) emitted from a plant; and employing the recycled carbon dioxide and silicon (Si) to produce silicon carbide (SiC) material and oxygen.

Abstract: Three-dimensional nanoporous aerogels and suitable preparation methods are provided. Nanoporous aerogels may include a carbide material such as a silicon carbide, a metal carbide, or a metalloid carbide. Elemental (e.g., metallic or metalloid) aerogels may also be produced. In some embodiments, a cross-linked aerogel having a conformal coating on a sol-gel material is processed to form a carbide aerogel, metal aerogel, or metalloid aerogel. A three-dimensional nanoporous network may include a free radical initiator that reacts with a cross-linking agent to form the cross-linked aerogel. The cross-linked aerogel may be chemically aromatized and chemically carbonized to form a carbon-coated aerogel. The carbon-coated aerogel may be suitably processed to undergo a carbothermal reduction, yielding an aerogel where oxygen is chemically extracted. Residual carbon remaining on the surface of the aerogel may be removed via an appropriate cleaning treatment.

Abstract: The present invention provides a method of manufacturing silicon and a manufacturing system for manufacturing and extracting silicon by grinding silicon carbide and silica, mixing each at predetermined ratio after cleaning them, housing them in a crucible, heating this by a heating unit to make them react, oxidizing the silicon carbide with the silica and further, reducing the silica with the silicon carbide. The present invention further provides a method of simultaneously manufacturing silicon and silicon carbide and a manufacturing system for producing silicon carbide by forming a silicon carbide film by vapor phase epitaxy using active gas generated in heating for reaction for material and recovering the silicon carbide film.

Abstract: A method of manufacturing SiC crystal includes the following steps. A manufacturing apparatus including a crucible having a main body portion and a heat insulating material covering the main body portion is prepared. In the main body portion, seed crystal is arranged opposed to a source material. The source material is heated to sublime and a source gas is precipitated on the seed crystal, to thereby grow SiC crystal. The step of preparing the manufacturing apparatus includes the step of arranging a heat radiation portion higher in thermal conductivity than the heat insulating material on a side of an outer surface of the main body portion on a side of seed crystal and covering the entire outer surface of the main body portion on the side of the seed crystal with the heat radiation portion or with the heat radiation portion and the heat insulating material.

Abstract: SiC single crystal that includes a first dopant functioning as an acceptor, and a second dopant functioning as a donor is provided, where the content of the first dopant is no less than 5×1015 atoms/cm3, the content of the second dopant is no less than 5×1015 atoms/cm3, and the content of the first dopant is greater than the content of the second dopant. A manufacturing method for silicon carbide single crystal is provided with the steps of: fabricating a raw material by mixing a metal boride with a material that includes carbon and silicon; vaporizing the raw material; generating a mixed gas that includes carbon, silicon, boron and nitride; and growing silicon carbide single crystal that includes boron and nitrogen on a surface of a seed crystal substrate by re-crystallizing the mixed gas on the surface of the seed crystal substrate.

Abstract: A novel polycrystalline stoichiometric fine SiC fiber substantially free of impurities is produced using a novel pre-ceramic polymer. The pre-ceramic polymer is prepared by reacting a mixture of chlorodisilane, boron trichloride, and a vinyl chlorodisilane with an excess of hexamethyldisilazane to form the pre-ceramic polymer resin, which may then be melt-spun, cured, pyrolyzed and heat-treated to obtain the finished SiC fiber. The manufacturing process for the production of the fine SiC ceramic fiber allows for flexibility with respect to cross-linking, in that low-cost thermal treatments may replace more complex methods, while obtaining fibers with improved materials properties as compared to currently available SiC fibers.

Abstract: The invention relates to a method for producing silicon carbide through reaction of silicon oxide and a carbon source comprising a hydrocarbon at high temperature, in particular to a technical method for producing silicon carbide or for producing compositions containing silicon carbide. The invention further relates to a high-purity silicon carbide, to compositions containing the same, to the use thereof as a catalyst and for the production of electrodes and other items.

Abstract: A method for preparation of high purity silicon suitable for photovoltaic cells using reduction of silica, which is pre-purified in an aqueous solution, in presence of a reducing agent, preferably carbonaceous agent, where the pre-purified silica has a low amount of boron suitable for photovoltaic cells is described.

Abstract: The invention relates to a process for obtaining a porous material made of recrystallized SiC, especially in the form of a structure for filtering a particulate-laden gas, starting from at least two powders of fine and coarse SiC particles, blended with an organic material comprising an organic pore former and/or a binder, in suitable proportions and in the presence of a sufficient amount of a solvent, such as water, so as to allow forming of said blend and firing thereof between 1600° C. and 2400° C., said process being characterized in that the difference between the percentile d90 of the coarse particle powder and the percentile d10 of the fine particle powder multiplied by the volume of organic material in the initial blend, expressed as a percentage relative to the total volume of the SiC particles, is between 250 and 1500. The invention also relates to the porous material made of recrystallized SiC that can be obtained by said process.