Abstract: A method for preparing vanadium-nitrogen alloy, the method including: 1) mixing and pressing a vanadium-containing compound, an agglutinant, and a carbon-premixed reducing agent to yield a spherical raw material, and air drying the spherical raw material; and 2) mixing the spherical raw material with a granular carbonaceous reducing agent to yield a mixture, and continually feeding the mixture into a shaft kiln of a medium frequency induction furnace, purging the shaft kiln with pure nitrogen and maintaining a furnace pressure at between 0.01 and 0.03 mPa, drying the mixture at a temperature of between 100 and 600° C., carbonizing and nitriding at a temperature of between 900 and 1350° C., cooling the resulting product to less than 100° C., and discharging the product.

Abstract: The present invention provides the following new polymers which are useful for hydrogen storage: (i) a polymer comprising -[MN2]— as a repeating unit, wherein M is selected from the group consisting Sc, Ti, V, Cr, Mn, Fe, Co, Zr, Nb, Mo, and mixtures thereof; and (ii) a polymer comprising -[M2N3]— as a repeating unit, wherein M is selected from the group consisting Sc, Ti, V, Cr, Mn, Fe, Co, Zr, Nb, Mo, and mixtures thereof.

Abstract: A lattice matching layer for use in a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an ?-? phase transition temperature higher than the room temperature. The hexagonal close-packed structure of the first chemical element has a first lattice parameter. The hexagonal close-packed structure of the second chemical element has a second lattice parameter. The second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature. A lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.

Abstract: To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 ?m.

Abstract: A crystal growth method, comprising the steps of: a) bringing a nitrogen material into a reaction vessel in which a mixed molten liquid comprising an alkaline metal and a group-III metal; and b) growing a crystal of a group-III nitride using the mixed molten liquid and the nitrogen material brought in by the step a) in the reaction vessel, wherein a provision is made such as to prevent a vapor of the alkaline metal from dispersing out of the reaction vessel.

Abstract: A process for preparing a composition of mixed crystalline particles from columns 13-15 in which a liquid solution is produced by solubilization in a non-aqueous solvent medium of at least one first precursor chosen from coordination complexes including at least one element E1 from column 13, then the liquid solution is brought into contact with at least one second precursor chosen from the hydrides of at least one element E2 from column 15.

Abstract: A method for producing a metal nitride by employing a container made of a nonoxide material, wherein reaction or adhesion of a raw metal or metal nitride to be formed to the container can be avoided and inclusion of oxygen derived from the material of the container can be prevented; by securing a certain or larger supply amount and a certain or higher flow rate of the nitrogen source gas, the raw metal can be converted into a nitride with an extremely high conversion, and a metal nitride having a small amount of an unreacted raw metal remaining and containing a metal and nitrogen in a stoichiometric constant can be obtained with a high yield; a metal nitride having small amounts of unreacted raw metal remaining and oxygen included can be obtained with a high yield and is very useful as a raw material for bulk crystal growth.

Abstract: Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-Ill nitride into said fluid.

Abstract: The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.

Abstract: A semiconductor crystal is produced through crystal growth in the presence of a solvent in a supercritical and/or subcritical state in a reactor, wherein at least a part of the surface of the reactor and the surface of the member to be used inside the reactor is coated with a platinum group-Group 13 metal alloy coating film.

Abstract: A biotemplated nanomaterial can include a crystalline perovskite.

Abstract: A group 13 nitride crystal has a hexagonal crystal structure containing a nitrogen atom and at least one type of metal atom selected from the group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal has a basal plane dislocation in a plurality of directions. Dislocation density of the basal plane dislocation is higher than dislocation density of a threading dislocation of a c-plane.

Abstract: A method of making iron nitride powder is provided. The method comprises the steps of: a) providing an iron-based starting material; b) reducing the starting material by heating the starting material in a fluidized bed reactor in the presence of a reducing agent; c) nitriding the material obtained from step (b) by contacting the material with a nitrogen source. Also provided is the iron nitride powder made by the above method.

Abstract: A gallium nitride substrate that a GaL?/CK? peak intensity ratio in EDX spectrum is not less than 2. The EDX spectrum is obtained in energy dispersive X-ray microanalysis (EDX) of a surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV.

Abstract: A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001] direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q.

Abstract: A method and apparatus for bulk Group-III nitride crystal growth through inductive stirring in a sodium flux growth technique. A helical electromagnetic coil is closely wound around a non-conducting cylindrical crucible containing a conductive crystal growth solution, including both precursor gallium and sodium, wherein a nitrogen-containing atmosphere can be maintained at any pressure. A seed crystal is introduced with the crystal's growth interface submerged slightly below the solution's surface. Electrical contact is made to the coil and an AC electrical field is applied at a specified frequency, in order to create eddy currents within the conductive crystal growth solution, resulting in a steady-state flux of solution impinging on the submerged crystal's growth interface.

Abstract: An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.

Abstract: A method and apparatus for bulk crystal growth using non-thermal atmospheric pressure plasmas. This method and apparatus pertains to growth of any compound crystal involving one or more crystal components in a liquid phase (also known as the melt or solution), in communication with a non-thermal atmospheric pressure plasma source comprised of one or more other crystal components.

Abstract: The present invention relates to a manufacturing method of a composite substrate. The method includes the steps of: providing a substrate; providing a precursor of group III elements and a precursor of nitrogen (N) element alternately in an atomic layer deposition (ALD) process or a plasma-enhanced atomic layer deposition (PEALD) process so as to deposit a nitride buffer layer on the substrate; and annealing the nitride buffer layer on the substrate at a temperature in the range of 300° C. to 1600° C.

Abstract: There is provided fine metal carbide particles which do not require pulverization of an initial material, a reaction intermediate and a product that causes the contamination with metallic impurities, which can promote a carbonization reaction uniformly at a lower temperature than in the past, and which can be manufactured at a low cost; and a method of manufacturing the same. The fine metal carbide particles are prepared by heat-treating, in a nonoxidizing atmosphere or a vacuum atmosphere, a solid obtained by drying an aqueous metal complex solution containing a water-soluble metal compound, and a low-molecular-weight water-soluble organic compound having one or more functional group(s) selected from the group consisting of amino group, hydroxyl group and carboxyl group, and having at least one of oxygen and nitrogen as heteroatom(s).

Abstract: A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.

Abstract: There is provided a method for producing a high-purity metal nitride by simple processes with good yield. Specifically provided is a method for producing a metal nitride including heating a metal hydride under a nitrogen gas or an ammonia gas.

Abstract: A method for manufacturing a nanoscale cage of a material suitable for forming a molecular layer, including a step of shaping and packaging an object in the general shape of a revolving cylinder, the shaping and packaging step being adapted according to the position of the value of the diameter of the revolving cylinder relative to a threshold below which a folding of the ends of the cylinder is promoted.

Abstract: A polarizer includes a first grating and a second grating. The second grating contains at least one of chromium nitride, tungsten nitride, and tantalum nitride.

Abstract: The present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones. For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel. Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented.

Abstract: A gallium nitride crystal having a hexagonal crystal structure, wherein a full width at half maximum (FWHM) of X-ray rocking curve in a region at a side of one edge in a c-axis direction is smaller than the FWHM in a region at a side of the other edge in the c-axis direction, in at least one of m-plane outer peripheral surfaces of the hexagonal crystal structure.

Abstract: A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.

Abstract: A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.

Abstract: A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.

Abstract: A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, using a high-pressure vessel with an upper region and a lower region. The temperature of the lower region is at or above 550° C., the temperature of the upper region is set at or above 500° C., and the temperature difference between the lower and upper regions is maintained at or above 30° C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.

Abstract: The disclosure provides a device and method used to produce a tubular structure made of a refractory metal compound. In particular, the disclosure provides a device and method used to produce a tubular structure made of a refractory metal compound by reacting a green tubular structure made of a refractory metal with at least one reactive gas.

Abstract: The disclosure provides a device and method used to produce a tubular structure made of a refractory metal compound. In particular, the disclosure provides a device and method used to produce a tubular structure made of a refractory metal compound by reacting a green tubular structure made of a refractory metal with at least one reactive gas.

Abstract: A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001] direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q.

Abstract: The present invention discloses a method of synthesizing transition metal nitride by using supercritical ammonia. Transition metal nitride such as vanadium nitride, molybdenum nitride, titanium nitride, nickel nitride, neodymium nitride, iron nitride, etc. can be synthesized in supercritical ammonia with reducing mineralizers such as potassium, sodium, lithium, magnesium, calcium, and aluminum. Since supercritical ammonia has characteristics of both gas and liquid, it can over complicated fine structure or fine particles. The new method is suitable for forming a protective coating on complicated structure or forming micro- to nano-sized particles.

Abstract: A crystal producing apparatus includes a crystal forming unit and a crystal growing unit. The crystal forming unit forms a first gallium nitride (GaN) crystal by supplying nitride gas into melt mixture containing metal sodium (Na) and metal gallium (Ga). The first GaN crystal is sliced and polished to form GaN wafers. The crystal growing unit grows a second GaN crystal on a substrate formed by using a GaN wafer, by the hydride vapor phase epitaxy method, thus producing a bulked GaN crystal.

Abstract: Methods and systems for treating wastewater and process water streams are provided. In some embodiments, the wastewater and/or process water to be treated contains a target chemical (e.g., ammonia and/or ammonium). The methods and systems described herein may include recovering the target chemical from the water stream and/or producing a desired product (e.g., a fertilizer such as an ammonium salt) from the target chemical. In one set of embodiments, a method of treating wastewater and/or process water involves introducing the water stream into a system that includes a combination of two or more of, or all of, a reverse osmosis system, a reaction and separation system (e.g., a vacuum distillation system or other suitable separation system), and a membrane reactor system.

Abstract: The invention relates to a method and system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The method includes reacting an amount of a gaseous Group III precursor having one or more gaseous gallium precursors as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber; and supplying sufficient energy to the gaseous gallium precursor(s) prior to their reacting so that substantially all such precursors are in their monomer forms. The system includes sources of the reactants, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their component monomers.

Abstract: A group III nitride crystal substrate is provided, wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.7×10?3, and wherein a plane orientation of the main surface has an inclination angle equal to or greater than ?10° and equal to or smaller than 10° in a [0001] direction with respect to a plane including a c axis of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

Abstract: A method for producing a nitride crystal, comprising growing a nitride crystal on the surface of a seed crystal put in a reactor while the temperature and the pressure inside the reactor that contains, as put thereinto, a seed crystal having a hexagonal-system crystal structure, a nitrogen-containing solvent, a starting material, and a mineralizing agent containing fluorine and at least one halogen element selected from chlorine, bromine and iodine are so controlled that the solvent therein could be in a supercritical state and/or a subcritical state to thereby grow a nitride crystal on the surface of the seed crystal in the reactor.

Abstract: The present invention relates to a method for preparing nitride nanomaterials, including: providing a first precursor and a second precursor, in which the first precursor is a transition metal precursor, a group IIIA precursor, a group IVA precursor or a mixture thereof, and a second precursor is a nitrogen-containing aromatic compound; and heating the first precursor with the second precursor to form a nitride nanomaterial. Accordingly, the present invention provides a simpler, nontoxic, more widely applied and low-cost method for preparing nitride nanomaterials.

Abstract: The present invention relates to Fe16N2 particles in the form of a single phase which are obtained by subjecting iron oxide or iron oxyhydroxide whose surface may be coated with at least alumina or silica, if required, as a starting material, to reducing treatment and nitridation treatment, a process for producing the Fe16N2 particles in the form of a single phase for a heat treatment time of not more than 36 hr, and further relates to an anisotropic magnet or a bonded magnet which is obtained by magnetically orienting the Fe16N2 particles in the form of a single phase. The Fe16N2 particles according to the present invention can be produced in an industrial scale and have a large BHmax value.

Abstract: To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 ?m.

Abstract: A group III nitride crystal substrate is provided wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.9×10?3, and wherein the main surface has a plane orientation inclined in a <11-20> direction at an angle equal to or greater than 10° and equal to or smaller than 81° with respect to one of (0001) and (000-1) planes of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

Abstract: There is provided a method for efficiently producing a high-purity alkali metal nitride or alkaline earth metal nitride by simple processes. Specifically provided is a method for producing an alkali metal nitride, an alkaline earth metal nitride, or a composite thereof, the method including thermally decomposing one or more alkali metal amides or alkaline earth metal amides.

Abstract: Disclosed herein is a method of manufacturing GaN powders using a GaN etching product produced during manufacture of a GaN-based light emitting device. The method includes collecting a GaN etching product produced during etching of the GaN-based light emitting device, cleaning the collected GaN etching product; heating the cleaned GaN etching product to remove indium (In) components from the GaN etching product, and pulverizing the GaN etching product having the indium components removed therefrom into powders. A nitride-based light emitting device using the GaN powders is also disclosed.

Abstract: A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, and using an autoclave having a high-pressure vessel with an upper region and a lower region. The temperature of the lower region of the high-pressure vessel is at or above 550° C., the temperature of the upper region of the high-pressure vessel is set at or above 500° C., and the temperature difference between the lower and upper regions is maintained at or above 30° C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.

Abstract: The present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. The vessel may have multiple zones. For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, and at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel. This invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented.

Abstract: There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.

Abstract: A semiconductor crystal is produced through crystal growth in the presence of a solvent in a supercritical and/or subcritical state in a reactor, wherein at least a part of the surface of the reactor and the surface of the member to be used inside the reactor is coated with a platinum group-Group 13 metal alloy coating film.

Abstract: An ammonothermal growth of group-III nitride crystals on starting seed crystals with at least two surfaces making an acute, right or obtuse angle, i.e., greater than 0 degrees and less than 180 degrees, with respect to each other, such that the exposed surfaces together form a concave surface.