Abstract: The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to provide sustained high volume manufacture of the semiconductor material on one or more substrates, with the gaseous Group III precursor continuously provided at a mass flow of 50 g Group III element/hour for at least 48 hours.

Abstract: A method for preparing a phosphor includes: dissolving at least one metal as a raw material of a desired phosphor in liquid ammonia to form a metal-amide type precursor; gathering the metal-amide type precursor; and firing the precursor to form a desired phosphor.

Abstract: A surface geometry for an implantable medical electrode that optimizes the electrical characteristics of the electrode and enables an efficient transfer of signals from the electrode to surrounding bodily tissue. The coating is optimized to increase the double layer capacitance and to lower the after-potential polarization for signals having a pulse width in a pre-determined range by keeping the amplitude of the surface geometry with a desired range.

Abstract: The present invention relates to a process for producing a nanocomposite material from a) at least one inorganic or organometallic metal phase; and b) an organic polymer phase; comprising the polymerization of at least one monomer M which have at least one first polymerizable monomer unit A which has a metal or semimetal M, and at least one second polymerizable organic monomer unit B which is joined to the polymerizable unit A via a covalent chemical bond, under polymerization conditions under which both the polymerizable monomer unit A and the polymerizable unit B polymerize with breakage of the bond between A and B, the monomers M to be polymerized comprising a first monomer M1 and at least one second monomer M2 which differs at least in one of the monomer units A and B from the monomer M1 (embodiment 1), or the monomers to be polymerized comprising, as well as the at least one monomer M, at least one further monomer other than the monomers M, i.e.

Abstract: A method for ammonothermally growing group-III nitride crystals using an initially off-oriented non-polar and/or semi-polar growth surface on a group-III nitride seed crystal. Group-III-containing source materials and group-III nitride seed crystals are placed into a vessel, wherein the seed crystals have one or more non-polar or semi-polar growth surfaces. Group-III nitride crystals are ammonothermally grown by filling the vessel with a nitrogen-containing solvent for dissolving the source materials and transporting a fluid comprised of the solvent with the dissolved source materials to the seed crystals for growth of the group-III nitride crystals on the seed crystals. The growth surfaces are initially off-oriented growth surfaces, wherein the growth surfaces are off-oriented m-plane or highly vicinal m-plane growth surfaces. The growth surfaces of the seed crystals may be created by cutting group-III nitride crystals at a desired angle with respect to an m-plane.

Abstract: The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.

Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.

Abstract: A semiconductor compound material, preferably a III-N-bulk crystal or a III-N-layer, is manufactured in a reactor by means of hydride vapour phase epitaxy (HVPE), wherein in a mixture of carrier gases a flow profile represented by local mass flow rates is formed in the reactor. The mixture can carry one or more reaction gases towards a substrate. Thereby, a concentration of hydrogen important for the reaction and deposition of reaction gases is adjusted at the substrate surface independently from the flow profile simultaneously formed in the reactor.

Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

Abstract: The present invention relates to proppants which can be used to prop open subterranean formation fractions. Proppant formulations are further disclosed which use one or more proppants of the present invention. Methods to prop open subterranean formation fractions are further disclosed. In addition, other uses for the proppants of the present invention are further disclosed, as well as methods of making the proppants.

Abstract: The present disclosure relates to a catalyst including platinum phosphide having a cubic structure, a method of making the catalyst, and a fuel cell utilizing the catalyst. The present disclosure also relates to method of making electrical power utilizing a PEMFC incorporating the catalyst. Also disclosed herein is a catalyst including a platinum complex wherein platinum is complexed with a nonmetal or metalloid. The catalyst with the platinum complex can exhibit good electro-chemically active properties.

Abstract: An apparatus for providing a reactant comprises a reactant space and a reservoir space. The reactant space comprises a chemical complex capable of evolving the reactant when heated. The reservoir space, in turn, is in gas communication with the reactant space. The apparatus is operative to heat the chemical complex when a pressure of the reactant in the reservoir space is below a predetermined set-point, and to cool the chemical complex when the pressure of the reactant in the reservoir space is above the predetermined set-point.

Abstract: A method to improve the crystal purity of a group-I11 nitride crystal grown in an ammonothermal growth system by removing any undesired material (i.e., impurities) from within the system prior to, in-between, or after the growth steps for the group-I11 nitride crystal. Impurities are removed from the ammonothermal growth system by first bringing the impurities into solution and then removing part or all of the solution from the growth system. The result is a high purity group-I11 nitride crystal grown in the ammonothermal growth system.

Abstract: A sapphire substrate on a surface of which a thin film of gallium nitride is formed is prepared as a seed-crystal substrate and placed in a growth vessel. Gallium and sodium metals are weighed to achieve a molar ratio of 25 to 32:68 to 75 and added into the vessel. The vessel is put into a reaction vessel. An inlet pipe is connected to the reaction vessel. Nitrogen gas is introduced from a nitrogen tank through a pressure controller to fill the reaction vessel. While the internal pressure of the reaction vessel is controlled to be a predetermined nitrogen gas pressure and target temperatures are set such that the temperature of a lower heater is higher than the temperature of an upper heater, a gallium nitride crystal is grown. As a result, a group 13 nitride crystal having a large grain size and a low dislocation density is provided.

Abstract: A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.

Abstract: To grow a highly pure nitride crystal having a low oxygen concentration efficiently by an ammonothermal method. A process for producing a nitride crystal, which comprises bringing a reactant gas reactive with ammonia to form a mineralizer, and ammonia into contact with each other to prepare a mineralizer in a reactor or in a closed circuit connected to a reactor; and growing a nitride crystal by an ammonothermal method in the presence of the ammonia and the mineralizer.

Abstract: A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.

Abstract: Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-Ill nitride into said fluid.

Abstract: Metal containing materials and methods of forming the same are disclosed. One such method includes substantially concurrently feeding a flow of precursor gas containing a metal of a metal containing material and a flow of source gas containing a reducing agent so that the precursor gas and the source gas react to form a thickness of the metal containing material. The flow of precursor gas is discontinued, and while the flow of precursor gas is discontinued, the flow of source gas continues to be fed to contact the thickness of the metal containing material.

Abstract: A method for adding hydrogen-containing and/or nitrogen-containing compounds to a nitrogen-containing solvent used during ammonothermal growth of group-Ill nitride crystals to offset decomposition products formed from the nitrogen-containing solvent, in order to shift the balance between the reactants, i.e. the nitrogen-containing solvent and the decomposition products, towards the reactant side.

Abstract: The ammonia decomposition catalyst of the present invention is a catalyst for decomposing ammonia into nitrogen and hydrogen, including a catalytically active component containing at least one kind of transition metal selected from the group consisting of molybdenum, tungsten, vanadium, chromium, manganese, iron, cobalt, and nickel, preferably including: (I) a catalytically active component containing: at least one kind selected from the group consisting of molybdenum, tungsten, and vanadium; (II) a catalytically active component containing a nitride of at least one kind of transition metal selected from the group consisting of molybdenum, tungsten, vanadium, chromium, manganese, iron, cobalt, and nickel; or (III) a catalytically active component containing at least one kind of iron group metal selected from the group consisting of iron, cobalt, and nickel, and at least one metal oxide, thereby making it possible to effectively decompose ammonia into nitrogen and hydrogen at relatively low temperatures and at

Abstract: A method and system for producing quantum confined metal nitride. The method includes immersing two electrodes into a nitrogen environment wherein at least one electrode includes an indium electrode, and passing an arc between the electrodes. The system includes a container for holding a bath of liquid nitrogen, two electrodes disposed inside the container so as to be immersed into the bath of liquid nitrogen, at least one of the two electrodes being a metal electrode, and a voltage source connected to the electrodes and configured to pass an arc between the electrodes.

Abstract: Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.

Abstract: An iron system magnetic powder, and particularly an iron system magnetic powder comprised chiefly of Fe16N2, is provided that has an atomic ratio of total noble metal content to Fe of 0.01-10%. The magnetic powder can be produced by subjecting iron oxy-hydroxide or iron oxide having an atomic ratio of total noble metal content to Fe of 0.01-10% to reduction treatment. The average particle volume of the magnetic powder is preferably 4,000 nm3 or less. The magnetic powder is suitable for fabricating high recording density media of low noise, high output and high C/N ratio that are suitable for use with a GMR head or the like.

Abstract: A method for producing a group III-nitride crystal having a large thickness and high quality and a group III-nitride crystal are provided. A method for producing a group III-nitride crystal 13 includes the following steps: A underlying substrate 11 having a major surface 11a tilted toward the <1-100> direction with respect to the (0001) plane is prepared. The group III-nitride crystal 13 is grown by vapor-phase epitaxy on the major surface 11a of the underlying substrate 11. The major surface 11a of the underlying substrate 11 is preferably a plane tilted at an angle of ?5° to 5° from the {01-10} plane.

Abstract: The subject invention concerns nanorods, compositions and substrates comprising nanorods, and methods of making and using nanorods and nanorod compositions and substrates. In one embodiment, the nanorod is composed of Zinc oxide (ZnO). In a further embodiment, a nanorod of the invention further comprises SiO2 or TiO2. In a specific embodiment, a nanorod of the invention is composed of ZnO coated with SiO2. Nanorods of the present invention are useful as an adhesion-resistant biomaterial capable of reducing viability in anchorage-dependent cells.

Abstract: A method of making iron nitride powder is provided. The method comprises the steps of: a) providing an iron-based starting material; b) reducing the starting material by heating the starting material in a fluidized bed reactor in the presence of a reducing agent; c) nitriding the material obtained from step (b) by contacting the material with a nitrogen source. Also provided is the iron nitride powder made by the above method.

Abstract: Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm?2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.

Abstract: A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the solution.

Abstract: The invention is related to a method of obtaining bulk mono-crystalline gallium-containing nitride, comprising a step of seeded crystallization of mono-crystalline gallium-containing nitride from supercritical ammonia-containing solution, containing ions of Group I metals and ions of acceptor dopant, wherein at process conditions the molar ratio of acceptor dopant ions to supercritical ammonia-containing solvent is at least 0.0001. According to said method, after said step of seeded crystallization the method further comprises a step of annealing said nitride at the temperature between 950° C. and 1200° C., preferably between 950° C. and 1150° C. The invention covers also bulk mono-crystalline gallium-containing nitride, obtainable by the inventive method. The invention further relates to substrates for epitaxy made of mono-crystalline gallium-containing nitride and devices manufactured on such substrates.

Abstract: Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled.

Abstract: Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30° C., its elastic constant C11 is from 348 GPa to 365 GPa and its elastic constant C13 is from 90 GPa to 98 GPa; alternatively its elastic constant C11 is from 352 GPa to 362 GPa.

Abstract: A method of growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and the group-III crystals grown by this method. The group III-nitride crystal is grown in a reaction vessel in supercritical ammonia using a source material or nutrient that is polycrystalline group III-nitride, amorphous group III-nitride, group-III metal or a mixture of the above, and a seed crystal that is a group-III nitride single crystal. In order to grow high-quality group III-nitride crystals, the crystallization temperature is set at 550° C. or higher. Theoretical calculations show that dissociation of NH3 at this temperature is significant. However, the dissociation of NH3 is avoided by adding extra N2 pressure after filling the reaction vessel with NH3.

Abstract: Catalytic system for partial oxidation reactions of hydrocarbons characterized in that it contains: one or more metals belonging to the 1st, 2nd, and 3rd transition series; one or more elements of group IIIA, IVA or VA, wherein at least one of said metals or said elements is in the form of a nitride.

Abstract: A method for producing nitrogen trifluoride related to the present invention is characterized in that a fluorine gas and an ammonia gas are fed into a tubular reactor and are reacted with each other in the presence of a diluting gas in a gaseous phase under the condition of no catalyst to produce a gas product mainly composed of nitrogen trifluoride and a solid product mainly composed of ammonium fluoride and/or acidic ammonium fluoride, and then the solid product attached to an inner wall of the tubular reactor is removed by means of a device for removing the solid product, which device is mounted to the tubular reactor.

Abstract: When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt 50 including at least a group III element, nitrogen and an alkali metal or an alkali earth metal, a melt-holding vessel 160 that holds the above-described melt 50 is swung about two axes different in direction from each other such as an x-axis and a Y-axis.

Abstract: An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.

Abstract: A method of growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and the group-III crystals grown by this method. The group III-nitride crystal is grown in a reaction vessel in supercritical ammonia using a source material or nutrient that is polycrystalline group III-nitride, amorphous group III-nitride, group-III metal or a mixture of the above, and a seed crystal that is a group-III nitride single crystal. In order to grow high-quality group III-nitride crystals, the crystallization temperature is set at 550° C. or higher. Theoretical calculations show that dissociation of NH3 at this temperature is significant. However, the dissociation of NH3 is avoided by adding extra N2 pressure after filling the reaction vessel with NH3.

Abstract: A colloidal suspension of III-V semiconductor nanoparticles.

Abstract: Disclosed is a method of manufacturing a GaN-based material having high thermal conductivity. A gallium nitride-based material is grown by HVPE (Hydride Vapor Phase Epitaxial Growth) by supplying a carrier gas (G1) containing H2 gas, GaCl gas (G2), and NH3 gas (G3) to a reaction chamber (10), and setting the growth temperature at 900 (° C.) (inclusive) to 1,200 (° C.) (inclusive), the growth pressure at 8.08×104 (Pa) (inclusive) to 1.21×105 (Pa) (inclusive), the partial pressure of the GaCl gas (G2) at 1.0×104 (Pa) (inclusive) to 1.0×104 (Pa) (inclusive), and the partial pressure of the NH3 gas (G3) at 9.1×102 (Pa) (inclusive) to 2.0×104 (Pa) (inclusive).

Abstract: A melt of a material is cooled and a sheet of the material is formed in the melt. This sheet is transported, cut into at least one segment, and cooled in a cooling chamber. The material may be Si, Si and Ge, Ga, or GaN. The cooling is configured to prevent stress or strain to the segment. In one instance, the cooling chamber has gas cooling.

Abstract: An apparatus and method for capturing, separating, transforming, and sequestering carbon wherein said apparatus dissociates a carbon containing feedstock material and reacts the resulting gases with a system-produced brine to create four products: 1) a sodium based carbonate or bicarbonate, 2) ammonium chloride, 3) fresh water, and 4) a multi-purpose building material. End product (1) may be sequestered in any of several ways for durable and long term storage. End product (2) may be used for nutrient enrichment. End products (3) and (4) may be distributed to human populations.

Abstract: Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which comprise a first element, with a catalyst. The catalyst and the first element should form when heated a liquid, mixed phase having a eutectic or peritectic point. The granules, which have been coated with the catalyst, can then be heated to a temperature greater than or equal to the eutectic or peritectic point. During heating, a vapor source comprising the second element is introduced. The vapor source chemically interacts with the liquid, mixed phase to consume the first element and to induce condensation of a product that comprises the first and second elements in the form of a nanowire.

Abstract: A process of synthesizing metal and metal nitride nanowires, the steps comprising of: forming a catalytic metal (such as gallium, and indium) on a substrate (such as fused silica quartz, pyrolytic boron nitride, alumina, and sapphire), heating the combination in a pressure chamber, adding gaseous reactant and/or solid metal source, applying sufficient microwave energy (or current in hot filament reactor) to activate the metal of interest (such as gold, copper, tungsten, and bismuth) and continuing the process until nanowires of the desired length are formed. The substrate may be fused silica quartz, the catalytic metal a gallium or indium metal, the gaseous reactant is nitrogen and/or hydrogen and the nanowires are tungsten nitride and/or tungsten.

Abstract: Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm?2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.

Abstract: A method for manufacturing Group III nitride crystals with high quality is provided. By the method, a crystal raw material solution and gas containing nitrogen are introduced into a reactor vessel, which is heated, and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device to the reactor vessel through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel, impurities attached to the pressure-resistant vessel and the like into the crystal growing site can be prevented. Further, the gas flows through the reactor vessel, to suppress aggregation of an evaporating alkali metal, etc., at the gas inlet and reduce flow of the metal vapor into the gas supplying device.

Abstract: A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

Abstract: A method of growing a III group nitride single crystal by using a metal-organic chemical vapor deposition (MOCVD) process, the method including: preparing an r-plane (1-102) substrate; forming a nitride-based nucleation layer on the substrate; and growing a nonpolar a-plane nitride gallium single crystal on the nitride-based nucleation layer while altering increase and decrease of a ratio of V/III group to alternate a horizontal growth mode and a vertical growth mode.

Abstract: The present invention allows the relatively easy production of binary and ternary compounds of metals, including noble metals. Embodiments of the invention allow, for the first time, the production of novel compositions of metal compounds, such as thick, stress-free single-phase binary and ternary compositions of metals, and porous compositions of such compounds. As such, the present invention allows for the production of metal compounds and/or compositions of matter thereof that have not before been possible, thereby providing for important new materials that find use in a multitude of different applications, including medical device and non-medical device applications.

Abstract: A gallium nitride-based material prepared by a vertical Hydride Vapor Phase Epitaxial Growth method which has thermal conductivity of at least 2.8×102 W/m·K at 25° C. is provided.