Abstract: A light emitting device and method of forming a light emitting device are disclosed. The light emitting device includes a light emitting diode and a phosphor layer formed on the light emitting diode, the phosphor layer including a plurality of phosphor particles formed in a particle layer, the particle layer including interstices between the phosphor particles, and a matrix material disposed in a portion of the interstices. A plurality of cavities may be disposed in a remaining portion of the interstices.

Abstract: An all-solid-state lithium battery, thermo-electromechanical activation of Li2S in sulfide based solid state electrolyte with transition metal sulfides, and electromechanical evolution of a bulk-type all-solid-state iron sulfur cathode, are disclosed. An example all-solid-state lithium battery includes a cathode having a transition metal sulfide mixed with elemental sulfur to increase electrical conductivity. In one example method of in-situ electromechanically synthesis of Pyrite (FeS2) from Sulfide (FeS) and elemental sulfur (S) precursors for operation of a solid-state lithium battery, FeS+S composite electrodes are cycled at moderately elevated temperatures.

Abstract: Provided is a molybdenum sulfide that is ribbon-shaped and particularly suitable for a hydrogen generation catalyst. Disclosed are a ribbon-shaped molybdenum sulfide, in which 50 particles as measured by observation with a scanning electron microscope (SEM) have a shape of, on average, 500 to 10000 nm in length, 10 to 1000 nm in width, and 3 to 200 nm in thickness; a method for producing the ribbon-shaped molybdenum sulfide, including: (1) heating a molybdenum oxide at a temperature of 200 to 1000° C. in the presence of a sulfur source; or (2) heating a molybdenum oxide at a temperature of 100 to 800° C. in the absence of a sulfur source, and then heating the molybdenum oxide at a temperature of 200 to 1000° C. in the presence of a sulfur source; and a hydrogen generation catalyst including the ribbon-shaped molybdenum sulfide.

Abstract: A process for preparing stacks of metal chalcogenide flakes includes: (a) reacting together a source of the metal atom of the target metal chalcogenide with a source of the chalcogenide atom of the target metal chalcogenide, in the presence of a spacer, so as to produce flakes of the metal chalcogenide; (b) depositing metal chalcogenide flakes obtained using step (a) onto a substrate to form a stack of assembled metal chalcogenide flakes, wherein the spacer contains an alkyl chain linked to a functional group able to bond to the metal chalcogenide surface, said alkyl chain having a length of less than 18 carbon atoms, preferably between 6 and 14 carbon atoms.

Abstract: Various embodiments disclosed relate to extraction of target materials using a CZTS sorbent. A method of extracting a target material from a medium includes contacting a copper zinc tin sulfur (CZTS) sorbent with the target material in the medium including the target material to form a used CZTS sorbent that includes the target material.

Abstract: Provided are a method for producing a sulfide solid electrolyte having a high Li ion conductivity, in which the production time can be greatly reduced, and a sulfur-based material that can be used in the production method for a sulfide solid electrolyte. The invention relates to a method for producing a sulfide solid electrolyte containing a lithium element, a sulfur element, a phosphorus element, an iodine element and a bromine element, which includes mixing and grinding lithium sulfide and lithium bromide followed by adding phosphorus sulfide and lithium iodide thereto and reacting them, and relates to a sulfur-based material.

Abstract: Various embodiments disclosed relate to extraction of target materials using a CZTS sorbent. A method of extracting a target material from a medium includes contacting a copper zinc tin sulfur (CZTS) sorbent with the target material in the medium including the target material to form a used CZTS sorbent that includes the target material.

Abstract: A method is provided for recovering mercury from a crude oil into an alkaline ammonium sulfide contacting solution. Soluble mercury complexes in the contacting solution are converted to particulate mercury. The particulate mercury can be recovered by filtering, and the ammonium sulfide in the contacting solution recycled to the aqueous contacting solution.

Abstract: Common approaches to synthesizing alloyed quantum dots employ high-cost, air-sensitive phosphine complexes as the selenium precursor. Disclosed quantum dot synthesis embodiments avoid these hazardous and air-sensitive selenium precursors. Certain embodiments utilize a combination comprising a thiol and an amine that together reduce and complex the elemental selenium to form a highly reactive selenium precursor at room temperature. The same combination of thiol and amine acts as the reaction solvent, stabilizing ligand, and sulfur source in the synthesis of quantum dot cores. A non-injection approach may also be used. The optical properties of the quantum dots synthesized by this new approach can be finely tuned for a variety of applications by controlling size and/or composition of size and composition. Further, using the same approach, a shell can be grown around a quantum dot core that improves stability, luminescence efficiency, and may reduce toxicity.

Abstract: A method is provided for forming an unsupported MoS2 layer in an aqueous medium, the method comprising the steps of: providing an assembly of a Mo oxide layer on a Si substrate; annealing said assembly in presence of H2S at a temperature sufficient for forming a MoS2 layer; and contacting the annealed assembly with an aqueous medium. This unsupported MoS2 layer can then be transferred by dip-coating to another substrate such as a dielectric substrate.

Abstract: A process for preparing a molybdenum sulfide-based catalyst comprises drying a precipitated molybdenum sulfide-based catalyst precursor, for example, a wet filter cake, such that a particulate catalyst precursor, containing from 12 to 15 percent by weight water, is formed. The particulate catalyst precursor is desirably in the form of free-flowing particles. The particulate catalyst precursor is then auto-reduced. A rotary furnace that subjects the catalyst precursor to at least two zones having distinct temperatures may be conveniently used for drying, auto-reduction, or both. The staged drying and auto-reduction steps reduce the tendency of the precursor to self-heat, which is undesirable because it reduces both the activity and selectivity of the final catalyst.

Abstract: Copper(II) acetate, zinc(II) acetate, and tin(IV) acetate are weighed so that the total amount of metal ions is 2.0×10?4 mol and the molar ratio of ions is Cu:Zn:Sn=2:1:1, and 2.0 cm3 of oleylamine is added to prepare a mixed solution. Apart from this, 1.0 cm3 of oleylamine is added to 2.0×10?4 mol of sulfur powder to prepare a mixed solution. These mixed solutions are separately heated at 60° C. and mixed at room temperature. The pressure in a test tube is reduced, followed by nitrogen filling. The test tube is heated at 240° C. for 30 minutes and then allowed to stand until room temperature. The resultant product is separated into a supernatant and precipitates by centrifugal separation. The separated supernatant is filtered, methanol is added to produce precipitates. The precipitates are dissolved by adding chloroform to prepare a semiconductor nanoparticle solution.

Abstract: Disclosed are an ink composition for manufacturing a light absorption layer including metal nano particles and a method of manufacturing a thin film using the same, more particularly, an ink composition for manufacturing a light absorption layer including copper (Cu)-enriched Cu—In bimetallic metal nano particles and Group IIIA metal particles including S or Se dispersed in a solvent and a method of manufacturing a thin film using the same.

Abstract: According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps.

Abstract: The present invention relates to dispersible binary and ternary metal chalcogenide nanoparticle compositions that are substantially free of organic stabilizing agents. These nanoparticle compositions can be used as precursor inks for the preparation of copper zinc tin chalcogenides and copper indium gallium chalcogenides. In addition, this invention provides processes for manufacturing coated substrates and thin films of copper zinc tin chalcogenide and copper indium gallium chalcogenide. This invention also provides process for manufacturing photovoltaic cells incorporating such thin films.

Abstract: The invention relates to a novel process for preparing lithium sulfide and to the use thereof, wherein a reaction of lithium-containing strong bases with hydrogen sulfide is undertaken in an aprotic organic solvent within the temperature range from ?20 to 120° C. under inert conditions. The lithium sulfide obtained by the process is used as a positive material in a galvanic element or for the synthesis of Li ion-conductive solids, especially for the synthesis of glasses, glass ceramics or crystalline products.

Abstract: A method for producing a thiometallate or selenometallate material is provided in which a first salt containing an anionic component selected from the group consisting of MoS42?, MoSe42?, WS42?, WSe42?, VS43?, and VSe43? and a second salt containing a cationic component comprising a metal in any non-zero oxidation state selected from the group consisting of Cu, Fe, Ag, Co, Mn, Re, Ru, Rh, Pd, Ir, Pt, B, Al, Ce, La, Pr, Sm, Eu, Yb, Lu, Dy, Ni, Zn, Bi, Sn are mixed under anaerobic conditions in an aqueous mixture at a temperature of from 50° C. to 150° C.

Abstract: A method of forming CuFeS2 chalcopyrite nanoparticles. The method includes, in the presence of one or more ligands, reacting an iron-containing compound, a copper-containing compound and a sulfur-containing compound to form CuFeS2 chalcopyrite nanoparticles; and wherein at least one of the ligands forms a coordination complex with copper, and at least one of the ligands forms a coordination complex with iron. Also a method of forming metal-doped CuFeS2 chalcopyrite nanoparticles such as Zn-doped CuFeS2 chalcopyrite nanoparticles. Also, a CuFeS2 chalcopyrite nanoparticle layer on a substrate. Also, a composition of matter including Zn-doped CuFeS2 chalcopyrite nanoparticles. Also, a Zn-doped CuFeS2 chalcopyrite nanoparticle layer on a substrate.

Abstract: A method for producing a thiometallate or selenometallate material is provided in which a first salt containing an anionic component selected from the group consisting of MoS42?, MoSe42?, WS42?, WSe42?, VS43?, and VSe43?, and a second salt containing a cationic component comprising a metal in any non-zero oxidation state selected from the group consisting of Fe, Ag, Co, Mn, Re, Ru, Rh, Pd, Ir, Pt, B, Al, Ce, La, Pr, Sm, Eu, Yb, Lu, Dy, Ni, Zn, Bi, Sn, Pb, Cd, Sb, Ge, Ga, In, Au, Hg are mixed under anaerobic conditions in an aqueous mixture at a temperature of from 15° C. to 150° C.

Abstract: Provided are methods for making quantum nanostructures based on use of a combination of nucleation and growth precursors. The methods can be used to provide quantum nanostructures of a selected size. Also provided are quantum nanostructures, compositions comprising the quantum nanostructures, and uses of the quantum nanostructures. The quantum nanostructures can be used, for example, in imaging applications.

Abstract: A method for the reduction of corrosion in a treatment unit acid used for separating hydrogen sulfide from and acid gas stream using an alkaline absorption solution. Ions comprising the S2? and/or HS? ions formed by the absorption of the hydrogen sulfide in the absorbent solution are subjected to in situ electrochemical oxidization to form polysulfide ions which form a protective coating on the surfaces of the unit.

Abstract: Thin films comprising crystalline Fe2XY4, wherein X is Si or Ge and Y is S or Se, are obtained by coating an ink comprised of nanoparticle precursors of Fe2XY4 and/or a non-particulate amorphous substance comprised of Fe, X and Y on a substrate surface and annealing the coating. The coated substrate thereby obtained has utility as a solar absorber material in thin film photovoltaic devices.

Abstract: A engineered composition and method of delivery of said composition providing effective therapy for the treatment of ulcerative colitis, and Crohn's disease.

Abstract: Materials and methods for preparing Cu2ZnSnS4 (CZTS) layers for use in thin film photovoltaic (PV) cells are disclosed herein. The CZTS materials are nanoparticles prepared by a colloidal synthesis in the presence of a labile organothiol. The organothiol serves as both a sulphur source and as a capping ligand for the nanoparticles.

Abstract: New magnetic materials containing cerium, iron, and small additions of a third element are disclosed. These materials comprise compounds Ce(Fe12?xMx) where x=1-4, having the ThMn12 tetragonal crystal structure (space group I4/mmm, #139). Compounds with M=B, Al, Si, P, S, Sc, Co, Ni, Zn, Ga, Ge, Zr, Nb, Hf, Ta, and W are identified theoretically, and one class of compounds based on M=Si has been synthesized. The Si cognates are characterized by large magnetic moments (4?Ms greater than 1.27 Tesla) and high Curie temperatures (264?Tc?305° C.). The Ce(Fe12?xMx) compound may contain one or more of Ti, V, Cr, and Mo in combination with an M element. Further enhancement in Tc is obtained by nitriding the Ce compounds through heat treatment in N2 gas while retaining the ThMn12 tetragonal crystal structure; for example CeFe10Si2N1.29 has Tc=426° C.

Abstract: The present invention relates to a process for the catalytic oxidation of sulphide, mono- and/or dihydrogen sulphide, comprising the step of contacting the sulphide, mono- and/or dihydrogen sulphide in the presence of oxygen with a chelate complex comprising (i) a metal cation selected from the group consisting of Fez+, Mnz+, NiZ+ and Coz+, where z=2 or 3, and (ii) a chelate ligand containing a porphyrin, a phthalocyanine or a porphyrazine ring coordinated to the metal cation, and at least one cationic substituent covalently attached to the ring in the chelate ligand.

Abstract: Disclosed herein is a method of synthesizing a nanocrystal. The method can include reacting a bismuth material, an antimony material, and a ligand together with a heat source. The method may also include injecting a sulfur precursor at a predetermined temperature and maintaining the predetermined temperature for a predetermined amount of time to form a plurality of precursor nanocrystals. The precursor nanocrystals may include Bi0.5Sb1.5S3 nanocrystals.

Abstract: The present invention provides a method of producing a sulfide compound semiconductor containing Cu, Zn, Sn and S, in which the method includes a solvothermal step of conducting a solvothermal reaction of Cu, Zn, Sn and S in an organic solvent, and a rod-like crystal of sulfide compound semiconductor containing Cu, Zn, Sn and S.

Abstract: The invention relates to a novel process for preparing lithium sulfide and to the use thereof, wherein a reaction of lithium-containing strong bases with hydrogen sulfide is undertaken in an aprotic organic solvent within the temperature range from ?20 to 120° C. under inert conditions. The lithium sulfide obtained by the process is used as a positive material in a galvanic element or for the synthesis of Li ion-conductive solids, especially for the synthesis of glasses, glass ceramics or crystalline products.

Abstract: A process is provided for the production of a micronized sulphur powder product as well as a micronized sulphur cake intermediate. Production of the micronized sulphur powder using this process, which comprises preparation of a micronized sulphur emulsion from molten sulphur and a dispersant solution, from which the dispersant solution is subsequently removed, produces a product of superior quality, and the method of production itself has enhanced safety and economic attributes.

Abstract: Configurations herein include a novel process and apparatus for generating and maintaining sulfur trioxide gas. The generation system and process operate to provide sulfur trioxide calibration gas for calibrating sulfur trioxide detection devices. The system and process provides a known, concentration of sulfur trioxide gas via a heated catalyst, which enables accurate calibration of measurement equipment. The system functions in part by controlling temperature, amount of moisture, residence time, catalyst selection, diluting generated sulfur trioxide and by locating the sulfur trioxide generator at a point of injection of a sulfur trioxide detection system.

Abstract: This invention relates to a process for the phase-controlled synthesis of ternary and quaternary mixed-metal sulfide nanoparticles by reacting soft metal ions with hard metal ions in a high-boiling organic solvent in the presence of a complexing and activating ligands to control the reactivity of the metal ions. Ternary and quaternary mixed metal sulfides nanoparticles of copper, sulfur, and iron, aluminum, tin, and silicon are preferred. This invention also relates to the phase controlled preparation of polymorphs of bornite nanoparticles and the phase controlled preparation of stabilized ?- and ?-chalconite nanoparticles.

Abstract: Disclosed are methods for producing chalcopyrite compound (e.g., copper indium selenide (CIS), copper indium gallium selenide (CIGS), copper indium sulfide (CIS) or copper indium gallium sulfide (CIGS)) thin films. The methods are based on solution processes, such as printing, particularly, multi-stage coating of pastes or inks of precursors having different physical properties. Chalcopyrite compound thin films produced by the methods can be used as light-absorbing layers for thin-film solar cells. The use of the chalcopyrite compound thin films enables the fabrication of thin-film solar cells with improved efficiency at low costs.

Abstract: Methods and systems are provided for the in situ generation of polysulfide ions in a process stream including S2? and/or HS? ions. Methods and systems are also provided to ameliorate corrosion in a process stream containing an acid gas or a scrubbing agent solvent, and abate mercury and cyanide in process streams containing a scrubbing agent solvent.

Abstract: Disclosed herein is a method of fabricating a CIS or CIGS thin film, comprising: forming, on a substrate, a seed particle layer comprising copper-indium-compound seed particles comprising copper (Cu); indium (In); and at least one selected from the group consisting of gallium (Ga), sulfur (S) and selenium (Se), applying, on the seed particle layer, a water-soluble precursor solution comprising: a water-soluble copper (Cu) precursor; a water-soluble indium (In) precursor; and at least one selected from the group consisting of a water-soluble gallium (Ga) precursor, a water-soluble sulfur (S) precursor and a water-soluble selenium (Se) precursor, and forming a thin film at high temperature.

Abstract: A method of controlling stoichiometry in a multicomponent material includes providing a solid sample comprising N elements and having a first composition in a main chamber, which is connected to at most N?1 reservoirs. Each of the reservoirs is configured to contain a vapor comprising one of the N elements, where N?2. The solid sample is heated to a first temperature in the main chamber, and each of the reservoirs is heated to a first reservoir temperature (T1, T2 . . . TN-1) sufficient to achieve a predetermined vapor pressure of the vapor contained therein. The reservoirs are placed in gaseous communication with the main chamber, and thermodynamic equilibrium is achieved between the vapor from each of the reservoirs and the solid sample in the main chamber. Consequently, a stoichiometry of the solid sample is changed to arrive at a second composition thereof.

Abstract: Disclosed herein is a method of synthesizing a nanocrystal. The method can include reacting a bismuth material, an antimony material, and a ligand together with a heat source. The method may also include injecting a sulfur precursor at a predetermined temperature and maintaining the predetermined temperature for a predetermined amount of time to form a plurality of precursor nanocrystals. The precursor nanocrystals may include Bi0.5Sb1.5S3 nanocrystals.

Abstract: An apparatus includes a manifold with a chamber for mixing multiple reactants. Gases are jetted into the manifold by a plurality of inlet injectors. The inlet injectors are arranged such that the gases passing into the manifold impinge on each other at a common point to form a mixture. The mixture passes through a plurality of holes in one side of the manifold into a deposition chamber where the mixture of gases impinges on additional gases at a common point to provide a reaction resulting in deposition of solid materials in the deposition chamber. The solid materials are free-standing.

Abstract: The present invention is directed to a manganese tetrathiotungstate composition.

Abstract: The present invention describes a reactor (1) for continuously preparing hydrogen sulfide H2S from hydrogen and sulfur, comprising a distributor device (15) for distributing gaseous hydrogen in a sulfur melt (9) present at least in a lower part of the reactor. The distributor device (15) is arranged in the sulfur melt (9) and comprises a distributor plate (16) which is arranged in the reactor (1) and has an edge (17) extending downward and, if appropriate, has passage orifices (19). The hydrogen from a hydrogen bubble which forms below the distributor plate (16) is (for example through the passage orifices (19)) distributed in the sulfur melt (9) via the distributor plate (16).

Abstract: The invention relates to a solid material with the following formula (A): (Cu+1a-u; Ag+1u; Zn+2b-v-(y/2); Cd+2v; Sn+4c-w-(y/2); 1X+4w; 2X+3y; S?2x)(A), in which the solid material: is in divided state in the form of particles having a mean equivalent diameter of 15 nm to 400 nm; has, according to X-ray diffraction analysis of the solid material, a unique crystalline structure; is suitable for forming a stable dispersion of at least one solid material with formula (A) in a liquid, referred to as dispersion liquid, made up of at least one compound with a value of ?p higher than 8 and a value of ?H higher than 5.

Abstract: A process for making molecular hydrogen, elemental sulfur and sulfur dioxide from hydrogen sulfide. The process involves contacting a gas stream of hydrogen sulfide within a contacting zone with a contacting composition comprising metal sulfide in a lower sulfided state and yielding from the contacting zone a product gas stream comprising hydrogen and a recovered contacting composition comprising metal sulfide in a higher sulfided state. The higher metal sulfide is regenerated with oxygen to yield elemental sulfur and sulfur dioxide.

Abstract: A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), having the formula A1?x-Bx-chalcogenide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ?0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcogenide are described.

Abstract: Nanorod and nanowire compositions are disclosed comprising copper indium selenide, copper indium gallium selenide, copper indium sulfide, or a combination thereof. Also disclosed are photovoltaic devices comprising the nanorod and/or nanowire compositions. Also disclosed are methods for producing the nanorod and nanowire compositions, and photovoltaic devices described herein.

Abstract: An apparatus is provided for generating mercury (II) sulfide from elemental mercury. Elemental mercury is injected into a heated and sealed reaction vessel containing vaporized sulfur. The elemental mercury reacts with at least a portion of the vaporized sulfur to form the mercury (II) sulfide within the reaction vessel. The formed mercury (II) sulfide is then unloaded from the reaction vessel.

Abstract: This invention relates to a process for the phase-controlled synthesis of ternary and quaternary mixed-metal sulfide nanoparticles by reacting soft metal ions with hard metal ions in a high-boiling organic solvent in the presence of a complexing and activating ligands to control the reactivity of the metal ions. Ternary and quaternary mixed metal sulfides nanoparticles of copper, sulfur, and iron, aluminum, tin, and silicon are preferred. This invention also relates to the phase controlled preparation of polymorphs of bornite nanoparticles and the phase controlled preparation of stabilized ?- and ?-chalconite nanoparticles.

Abstract: The present invention relates to synthesis of copper zinc tin sulfide, Cu2ZnSnS4. Copper zinc tin sulfide is useful as an absorber material in a thin film solar cell application.

Abstract: The present invention relates to synthesis of copper zinc tin sulfide, Cu2ZnSnS4(CZTS) in an ionic liquid, using a mixture of copper-containing sulfides, zinc-containing sulfides, and tin-containing sulfides. Cu2ZnSnS4 is useful as an absorber material in thin film solar cells.

Abstract: A method of manufacturing a quantum dot, the method including: mixing of a Group II precursor and a Group III precursor in a solvent to prepare a first mixture; heating the first mixture at a temperature of about 200° C. to about 350° C.; adding a Group V precursor and a Group VI precursor to the first mixture while maintaining the first mixture at the temperature of about 200° C. to about 350° C. to prepare a second mixture; and maintaining the second mixture at the temperature of about 200° C. to about 350° C. to form a quantum dot.

Abstract: The invention relates to methods for preparing 3-element semiconductor nanocrystals of the formula WYxZ(1-x), wherein W is a Group II element, Y and Z are different Group VI elements, and 0<X<1, comprising dissolving a Group II element, a first Group VI element, and a second Group VI element in a one or more solvents. The Group II, VI and VI elements are combined to provide a II:VI:VI SCN precursor solution, which is heated to a temperature sufficient to produce semiconductor nanocrystals of the formula WYxZ(1-x). The solvent used to dissolve the Group II element comprises octadecene and a fatty acid. The solvent used to dissolve the Group VI elements comprises octadecene. The invention also includes semiconductor nanocrystals prepared according to the disclosed methods, as well as methods of using the semiconductor nanocrystals.