Abstract: The present invention relates to syntheses of quaternary chalcogenide compounds such as copper zinc tin sulfide in cesium, rubidium, barium and lanthanum containing fluxes. The quaternary chalcogenides are useful as the absorber layer as a p-type semiconductor in a thin film solar cell application.

Abstract: A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), having the formula A1?x-Bx-chalcogenide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ?0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcogenide are described.

Abstract: A method of producing micronized sulphur wherein elemental sulphur is dissolved in a solvent for sulphur to produce a sulphur-solvent solution and precipitation of the dissolved sulphur is effected or controlled by manipulation of at least one of pressure, temperature or water content in the solvent to produce the micronized sulphur.

Abstract: This invention relates to processes for making kesterite compositions with atypical Cu:Zn:Sn:S ratios and/or kesterite compositions with unusually small coherent domain sizes. This invention also relates to these kesterite compositions and their use in preparing CZTS films.

Abstract: The present invention relates to synthesis of copper zinc tin sulfide, Cu2ZnSnS4, and its corresponding selenide and telluride analogs in ionic liquids. Cu2ZnSnS4 and related compounds are useful as absorber materials in thin film solar cells.

Abstract: A method for producing a thiometallate or selenometallate material is provided in which a first salt containing an anionic component selected from the group consisting of MoS42?, MoSe42?, WS42?, WSe42? and a second salt containing a cationic component comprising copper in any non-zero oxidation state are mixed under anaerobic conditions in an aqueous mixture at a temperature of from 50° C. to 150° C.

Abstract: A method of forming CuFeS2 chalcopyrite nanoparticles. The method includes, in the presence of one or more ligands, reacting an iron-containing compound, a copper-containing compound and a sulfur-containing compound to form CuFeS2 chalcopyrite nanoparticles; and wherein at least one of the ligands forms a coordination complex with copper, and at least one of the ligands forms a coordination complex with iron. Also a method of forming metal-doped CuFeS2 chalcopyrite nanoparticles such as Zn-doped CuFeS2 chalcopyrite nanoparticles. Also, a CuFeS2 chalcopyrite nanoparticle layer on a substrate. Also, a composition of matter including Zn-doped CuFeS2 chalcopyrite nanoparticles. Also, a Zn-doped CuFeS2 chalcopyrite nanoparticle layer on a substrate.

Abstract: Disclosed is a technique of producing that a technique of producing quantum dots that are nano-size semiconducting crystals. An apparatus of producing quantum dots includes a mixer to mix different kinds of precursor solutions uniformly in a channel by diverging each precursor solution into a plurality of micro streams and joining the diverging micro streams individually with different kinds of micro streams, and a heating furnace to pass the precursor mixture solution discharged from the mixer therethrough to create and grow quantum dot nucleuses, thus producing quantum dots. The mixer may further include a heating unit allowing temperature adjustment. In addition, a buffer which is maintained at a relatively low-temperature is provided between the mixer and the heating furnace in order to prevent additional nucleation. Accordingly, quantum dots may be produced even at a high flow rate, which leads to mass-production of quantum dots.

Abstract: A sulfidable catalyst containing at least one metal or metal oxide is sulfided under aqueous conditions.

Abstract: A method for making a chalcopyrite-type compound includes reacting a reaction mixture in a solvent under reflux condition to form the chalcopyrite-type compound. The reaction mixture includes at least one first compound and at least one second compound. The first compound contains M1 and A. The second compound contains M2 and A. M1 is selected from Cu, Au, Ag, Na, Li and K, M2 is selected from In, Ga, Al, Ti, Zn, Cd, Sn, Mg, and combinations thereof, and A is selected from S, Se, Te, and combinations thereof.

Abstract: The present invention relates to aqueous processes to make metal chalcogenide nanoparticles that are useful precursors to copper zinc tin sulfide/selenide and copper tin sulfide/selenide. In addition, this invention provides processes for preparing crystalline particles from the metal chalcogenide nanoparticles, as well as processes for preparing inks from both the metal chalcogenide nanoparticles and the crystalline particles.

Abstract: Methods for orienting a plurality of sliver structures include applying at least one directional force to a group of sliver structures each having an orientation material applied to an edge to cause the plurality of sliver structures to orient in a common direction. The method may also include capturing the oriented sliver structures in a capture device to maintain the orientation of the sliver structures in the common direction. The oriented sliver structures may be used to form sub-assemblies such as solar array sub-assemblies that are used to generate solar power. Methods of applying an orientation material to sliver structures and resulting sliver structures are also disclosed.

Abstract: The present invention relates to synthesis of copper zinc fin sulfide, Cu2ZnSnS4(CZTS) in an ionic liquid, using a mixture of copper-containing sulfides, zinc-containing sulfides, and tin-containing sulfides. Cu2ZnSnS4 is useful as an absorber material in thin film solar cells.

Abstract: The present invention relates to synthesis of copper zinc tin sulfide, Cu2ZnSnS4. Copper zinc tin sulfide is useful as an absorber material in a thin film solar cell application.

Abstract: The present invention provides a semiconductor powder composed of Cu-M-Sn—S in a single phase wherein M is at least one selected from the group consisting of Zn, Co, Ni, Fe and Mn, the powder being obtained by wet synthesis, and a method for producing this semiconductor powder. According to the present invention, it is possible to provide, in a simple way, a high-grade semiconductor powder composed of a single-phase Cu-M-Sn—S such as CZTS.

Abstract: A method for making a chalcopyrite-type compound includes: reacting a reaction mixture in a first solvent under reflux condition to form the chalcopyrite-type compound containing M1, M2, and A, in which M1 is selected from Cu, Au, Ag, Na, Li, and K, M2 is selected from In, Ga, Al, Ti, Zn, Cd, Sn, Mg, and combinations thereof, and A is selected from S, Se, Te, and combinations thereof; filtering the reaction mixture to obtain a crude cake; mixing the crude cake with a second solvent and a powder of a post-treatment material selected from S, Se, Te, and combinations thereof; and heating the mixture under reflux condition.

Abstract: The present invention relates to synthesis of copper zinc tin sulfide, Cu2ZnSnS4, and its corresponding selenide and telluride analogs in ionic liquids. Cu2ZnSnS4 and related compounds are useful as absorber materials in thin film solar cells.

Abstract: The present invention relates to syntheses of quaternary chalcogenide compounds such as copper zinc tin sulfide in cesium, rubidium, barium and lanthanum containing fluxes. The quaternary chalcogenides are useful as the absorber layer as a p-type semiconductor in a thin film solar cell application.

Abstract: A method of providing and using a material storage system that includes a material stored within an intercalated dichalcogenide material. Also provided are novel materials for use in preparing such a system, including combinations and systems thereof, as well as a material stored and recovered for use by employment of such a method.

Abstract: Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.

Abstract: Ternary and quaternary Chalcopyrite CuInxGa1-xSySe2-y (CIGS, where 0?x and y?1) nanoparticles were synthesized from molecular single source precursors (SSPs) by a one-pot reaction in a high boiling solvent using salt(s) (i.e. NaCl as by-product) as heat transfer agent via conventional convective heating method. The nanoparticles sizes were 1.8 nm to 5.2 nm as reaction temperatures were varied from 150° C. to 190° C. with very high-yield. Tunable nanoparticle size is achieved through manipulation of reaction temperature, reaction time, and precursor concentrations. In addition, the method developed in this study was scalable to achieve ultra-large quantities production of tetragonal and quaternary Chalcopyrite CIGS nanoparticles.

Abstract: An apparatus for burning sulfur to produce sulfur dioxide, which sulfur dioxide is associated with a multi-channel gas valve associated with other gas sources to selectively be blended each into water by a combination mixer/aerator to aerate water in one monde, admix sulfur dioxide with water to form sulfurous acid in another mode, and stir and mix water without gases in a third mode.

Abstract: Nanoparticle compositions and methods for synthesizing multinary chalcogenide CZTSSe nanoparticles containing Cu, Zn, and Sn in combination with S, Se or both are described. The nanoparticles may be incorporated into one or more ink solutions alone or in combination with other chalcogenide-based particles to make thin films useful for photovoltaic applications, including thin films from multilayer particle films having a composition profile. The composition and stoichiometry of the thin films may be further modified by subjecting the particle films to gas or liquid phase chalcogen exchange reactions.

Abstract: Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.

Abstract: A primary cell having an anode comprising lithium and a cathode comprising a metal doped iron sulfide and carbon particles. A cathode slurry is prepared comprising the metal doped iron sulfide powder, carbon, binder, and a liquid solvent. The mixture is coated onto a conductive substrate and solvent evaporated leaving a dry cathode coating on the substrate. The anode and cathode can be spirally wound with separator therebetween and inserted into the cell casing with electrolyte then added.

Abstract: Copper(II) acetate, zinc(II) acetate, and tin(IV) acetate are weighed so that the total amount of metal ions is 2.0×10?4 mol and the molar ratio of ions is Cu:Zn:Sn=2:1:1, and 2.0 cm3 of oleylamine is added to prepare a mixed solution. Apart from this, 1.0 cm3 of oleylamine is added to 2.0×10?4 mol of sulfur powder to prepare a mixed solution. These mixed solutions are separately heated at 60° C. and mixed at room temperature. The pressure in a test tube is reduced, followed by nitrogen filling. The test tube is heated at 240° C. for 30 minutes and then allowed to stand until room temperature. The resultant product is separated into a supernatant and precipitates by centrifugal separation. The separated supernatant is filtered, methanol is added to produce precipitates. The precipitates are dissolved by adding chloroform to prepare a semiconductor nanoparticle solution.

Abstract: The invention discloses a method for forming granular polynary nano compound, which comprises the steps of (S1) mixing at least two materials, selected from a pre-determined group, to contact it with a aliphatic amine to form a mixture; (S2) inputting a noble gas to the housing that the mixture disposed; (S3) heating the mixture to a first temperature and maintain at the first temperature for a first period; (S4) heating the mixture to the second temperature by a pre-determined heating rate and maintain at the second temperature for a second period; and (S5) precipitating the granular polynary nano compound from the mixture by a pre-determined way.

Abstract: A method for preparing nanocrystals is disclosed. According to one aspect, the noncrystals include a semiconductor ternary compound consisting of the elements A, B and C. According to another aspect, the nanocrystals include a semiconductor of formula ABC2 optionally coated with a shell, the external portion of which includes a semiconductor of formula ZnS1-xFx, with A representing a metal or metalloid in the oxidation state +I, B representing a metal or metalloid in the oxidation state +III, C representing an element in the oxidation state ?II, F representing an element in the oxidation state ?II and x being a decimal number such that 0?x<1. The disclosure also relates to the prepared nanocrystals and their uses.

Abstract: Disclosed herein is a method of fabricating a CIS or CIGS thin film, comprising: forming, on a substrate, a seed particle layer comprising copper-indium-compound seed particles comprising copper (Cu); indium (In); and at least one selected from the group consisting of gallium (Ga), sulfur (S) and selenium (Se), applying, on the seed particle layer, a water-soluble precursor solution comprising: a water-soluble copper (Cu) precursor; a water-soluble indium (In) precursor; and at least one selected from the group consisting of a water-soluble gallium (Ga) precursor, a water-soluble sulfur (S) precursor and a water-soluble selenium (Se) precursor, and forming a thin film at high temperature.

Abstract: To produce fluorescent bodies providing high brightness and high energy efficiency, a method of preparing a fluorescent body precursor is provided to enable an activator having a large ionic radius to be doped arbitrarily. The problems described above are solved by a method of preparing a fluorescent body precursor, which method is characterized by comprising applying a shock pressure of 0.1 GPa or higher to a mixture consisting essentially of a fluorescent body base, an activator and a co-activating particle-growth promoter to dope the activator into the fluorescent body base in the presence of the co-activating particle-growth promoter.

Abstract: The invention relates to a composition capable of trapping hydrogen comprising: (a) at least one mineral compound of formula (I) below: MX(OH)??(I) in which: M represents a divalent transition element; O represents an oxygen atom; X represents an atom chosen from S, Se, Te, Po; and H represents a hydrogen atom; and (b) at least one nitrate salt of formula (II) below: ZNO3??(II) in which Z is a monovalent cation. Use of these compositions either in pulverulent form for trapping gaseous hydrogen by direct interaction, or in the form of an adjuvant in a containment material for, for example, trapping hydrogen released by radiolysis in radioactive waste packages.

Abstract: A process for producing a Group II metal sulfide phosphor precursor, comprising adding to an organic solvent an aqueous solution containing at least one of a Group II element compound, a sulfurizing agent, and a compound containing any of copper, silver, manganese, gold, and rare-earth elements to obtain a reaction mixture, heating the reaction mixture to produce an azeotrope of the water and the organic solvent, and removing water from the reaction mixture to produce a desired Group II metal sulfide in the reaction mixture, wherein the removal of water from the reaction mixture occurs by recovering only the water condensed from a vapor produced by the azeotropic distillation.

Abstract: The invention relates to lithium argyrodite of the general formula (I): Li+(12-n-x)Bn+X2?6-xY?x (I), where Bn+ is selected from the group consisting of P, As, Ge, Ga, Sb, Si, Sn, Al, In, Ti, V, Nb, and Ta; X2? is selected from the group consisting of S, Se, and Te; Y? is selected from the group consisting of Cl, Br, I, F, CN, OCN, SCN, and N3; 0?x?2, and a method for the production thereof, and the use thereof as a lithium-ion electrolyte in primary and secondary electrochemical energy storage.

Abstract: The invention relates to improvements in the production of alcohols by microbial fermentation, particularly to production of alcohols by microbial fermentation of a substrate comprising CO. It more particularly relates to the provision of an inorganic organic sulfur source to a fermentation system such that one or more micro-organisms convert a substrate comprising CO to alcohols. In a particular embodiment, a microbial culture is provided with sodium polysulfide, wherein a substrate comprising CO is converted to products including ethanol and 2,3-butanediol.

Abstract: The invention provides a fabrication method for a chalcopyrite powder. The fabrication method includes: (a) mixing a Group IB compound and a Group IIIA compound in a solvent; (b) drying or precipitating the solution of step (a) to obtain a precursor containing Group IB and Group IIIA elements; (c) mixing a solution or powder containing a Group VIA compound with the precursor; and (d) heating the mixture of step (c) to obtain the chalcopyrite powder.

Abstract: Disclosed herein is a method for synthesizing a nanoparticle using a carbene derivative. More specifically, provided is a method for synthesizing a nanoparticle by adding one or more precursors to an organic solvent to grow a crystal, wherein a specific carbene derivative is used as the precursor.

Abstract: The invention relates to a sulphide catalyst for electrochemical reduction of oxygen particularly stable in chemically aggressive environments such as chlorinated hydrochloric acid. The catalyst of the invention comprises a noble metal sulphide single crystalline phase supported on a conductive carbon essentially free of zerovalent metal and of metal oxide phases, obtainable by reduction of metal precursor salts and thio-precursors with a borohydride or other strong reducing agent.

Abstract: Provided is a method for preparing a chalcogenic hybrid nanostructure including: (a) adding a chalcogenic nanostructure, an electron donor and an electron acceptor to a medium containing metal-reducing bacteria to prepare a reaction mixture, the electron acceptor including a chalcogen element; and (b) performing a metal reduction reaction using the prepared reaction mixture to prepare a chalcogenic hybrid nanostructure with the chalcogen element of the electron acceptor incorporated. The present disclosure provides a new method allowing preparation of a chalcogenic hybrid nanostructure comprising three or more components using metal-reducing bacteria. The disclosure allows preparation of a nanostructure in a more economical and eco-friendly manner. The disclosure also allows control of morphological, physical/chemical and electrical properties of the prepared nanostructure. In addition, the present disclosure provides a nanomaterial that can be useful in nanoelectronic and optoelectronic devices.

Abstract: A method of synthesizing metal chalcogenide nanocrystals involving the steps of combining an organodichalcogenide, a metal salt and a ligand compound to form a mixture; degassing the mixture to remove air and water from the mixture; heating the mixture at a temperature below the decomposition temperature of the organodichalcogenide for a period of time sufficient to form a metal chalcogenide nanocrystal.

Abstract: The invention relates to a method for isolating hydrogen sulphide from coke-oven gas with the subsequent recovery of elemental sulphur in a Claus plant. The hydrogen sulphide is eliminated from the coke-oven gas by gas washing using an absorption liquid. During the regeneration of the loaded absorption liquid, hydrogen sulphide is accumulated in concentrated form and is fed to the Claus plant. Said Claus plant comprises a Claus boiler, a waste-heat boiler, in addition to a reactor, which forms an additional catalyst stage. According to the invention, the Claus plant is operated with a single reactor, which operates at a working temperature of below 250° C. The process gas that exits the reactor is returned after the deposition of elemental sulphur with a non-reacted residual concentration of hydrogen sulphide to the coke-oven gas that is to be cleaned, prior to the gas washing stage.

Abstract: A method for producing a semiconductor film having a chalcopyrite structure including a Ib group element, a IIIb group element and a VIb group element including selenium, the method including cracking selenium with plasma to generate radical selenium, and using the radical selenium in the process of forming the semiconductor film.

Abstract: The object of the invention is a process for the synthesis of nanotubes of transition metal dichalcogenides, of fullerene-like nanostructures of transition metal dichalcogenides, of nanotubes of transition metal dichalcogenides, filled with fullerene-like nanostructures of transition metal dichalcogenides, of quasi one-dimensional structures (nanowires, microwires and ribbons) of transition metal oxides and of quasi one-dimensional structures of transition metal dichalcogenides, consisting of fine crystallites of transition metal dichalcogenides. The process is characterized in that the synthesis occurs by the chemical transformation of quasi one-dimensional compounds with a sub-micron diameter, described by the formula M6CyHz, 8.2<y+z?10, where M is a transition metal (Mo, W, Ta, Nb), C is a chalcogen (S, Se, Te), H is a halogen (I).

Abstract: Provided is a multilayered nanostructure including at least one first layered nanotube including at least one first inorganic material and having an inner void holding at least one second layered nanotube including at least one second inorganic material; where the at least on first nanotube and at least one second nanotube differ in at least one of structure and material. Further provided are processes for the manufacture of multilayered nanostructures and uses thereof.

Abstract: Metal chalocogenide precursor solutions are described that comprise an aqueous solvent, dissolved metal formate salts and a chalcogenide source composition. The chalcogenide source compositions can be organic compounds lacking a carbon-carbon bond. The precursors are designed to form a desired metal chalcogenide upon thermal processing into films with very low levels of contamination. Potentially contaminating elements in the precursors form gaseous or vapor by-products that escape from the vicinity of the product metal chalcogenide films.

Abstract: Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Abstract: The present invention provides a convenient process for making lithium-containing transition metal sulfides involving heating at least one transition metal sulfide with lithium sulfate or any material that is a precursor for lithium sulfate, under reducing reaction conditions, wherein the oxidation state of the transition metal is not reduced during the reaction process.

Abstract: The present invention provides a convenient process for making lithium-containing transition metal sulfides involving heating at least on transition metal sulfide with a lithium-containing compound, wherein the lithium-containing compound is selected from one or more of lithium oxide, lithium sulfate, lithium carbonate, anhydrous lithium hydroxide, lithium hydroxide monohydrate, lithium oxalate, lithium nitrate, and any material that is a precursor for any of these lithium-containing compounds.

Abstract: A method for producing a thiometallate or selenometallate material is provided in which a first salt containing an anionic component selected from the group consisting of MoS42?, MoSe42?, WS42?, WSe42?, VS43?, and VSe43?, and a second salt containing a cationic component comprising a metal in any non-zero oxidation state selected from the group consisting of Fe, Ag, Co, Mn, Re, Ru, Rh, Pd, Ir, Pt, B, Al, Ce, La, Pr, Sm, Eu, Yb, Lu, Dy, Ni, Zn, Bi, Sn, Pb, Cd, Sb, Ge, Ga, In, Au, Hg are mixed under anaerobic conditions in an aqueous mixture at a temperature of from 15° C. to 150° C.

Abstract: A process for producing lithium iron sulfide, which is characterized by comprising: a first step of mixing an iron sulfide (a) with sulfur to produce a mixture of the iron sulfide (a) and sulfur, and subsequently burning the mixture of the iron sulfide (a) and sulfur in an inert gas atmosphere to produce an iron sulfide (b) that has an almost single phase as determined by an X-ray diffraction analysis and has a molar ratio of the content of element iron to the content of element sulfur (i.e., an Fe/S ratio) of not less than 0.90 and less than 1.00; and a second step of mixing the iron sulfide (b) with lithium sulfide to produce a mixture of the iron sulfide (b) and lithium sulfide, and subsequently burning the mixture of the iron sulfide (b) and lithium sulfide in an inert gas atmosphere to produce lithium iron sulfide represented by formula Li2FeS2.

Abstract: A method for producing a thiometallate or selenometallate material is provided in which a first salt containing an anionic component selected from the group consisting of MoS42?, MoSe42?, WS42?, WSe42?, VS43?, and VSe43? and a second salt containing a cationic component comprising a metal in any non-zero oxidation state selected from the group consisting of Cu, Fe, Ag, Co, Mn, Re, Ru, Rh, Pd, Ir, Pt, B, Al, Ce, La, Pr, Sm, Eu, Yb, Lu, Dy, Ni, Zn, Bi, Sn are mixed under anaerobic conditions in an aqueous mixture at a temperature of from 50° C. to 150° C.