Abstract: Nano-porous corundum ceramics and methods of manufacture are disclosed. The method of forming nano-porous corundum ceramics includes milling corundum powder in aqueous slurry with beads. The method further includes processing the slurry by a liquid shaping process to form a gelled body. The method further includes sintering the gelled body between 600° C. to 1000° C.

Abstract: A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cm3 and a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having Tsub=400° C. under a vacuum pressure of 1×10?8 Torr.

Abstract: Provided is a gallium oxide single crystal and a gallium oxide single crystal substrate that can improve the luminous efficiency. In a gallium oxide single crystal 13, the dislocation density is less than or equal to 3.5×106/cm2. The gallium oxide single crystal 13 is manufactured by the EFG method. Further, the seed touch temperature in the EFG method is greater than or equal to 1930 degrees centigrade and less than or equal to 1950 degrees centigrade. A neck part 13a of the gallium oxide single crystal 13 is less than or equal to 0.8 mm. A gallium oxide single crystal substrate 21 is made of the gallium oxide single crystal 13.

Abstract: A method and apparatus for growing truly bulk In2O3 single crystals from the melt, as well as melt-grown bulk In2O3 single crystals are disclosed. The growth method comprises a controlled decomposition of initially non-conducting In2O3 starting material (23) during heating-up of a noble metal crucible (4) containing the In2O3 starting material (23) and thus increasing electrical conductivity of the In2O3 starting material with rising temperature, which is sufficient to couple with an electromagnetic field of an induction coil (6) through the crucible wall (24) around melting point of In2O3. Such coupling leads to an electromagnetic levitation of at least a portion (23.1) of the liquid In2O3 starting material with a neck (26) formation acting as crystallization seed. During cooling down of the noble metal crucible (4) with the liquid In2O3 starting material at least one bulk In2O3 single crystal (28.1, 28.2) is formed.

Abstract: The object of the present invention is to provide an etching solution composition for etching a metal oxide containing In and a metal oxide containing Zn and In used as a transparent electrode or an oxide semiconductor of an electronic device such as a semiconductor element or a flat panel display (FPD), the etching solution composition being controllable to give a practical etching rate, having high dissolving power toward Zn, and enabling a long solution life due to suppressed variation of the formulation during use. The object is solved by an etching solution composition that enables microfabrication to be carried out for a metal oxide containing In and a metal oxide containing Zn and In used as a transparent electrode or an oxide semiconductor of an electronic device such as a semiconductor element or an FPD, the composition containing water and at least one type of acid, excluding hydrohalic acids, perhalic acids, etc., having an acid dissociation constant pKan at 25° C.

Abstract: A method for preparing amorphous iron oxide hydroxide, comprising following steps: (1) preparing a ferrous salt solution with solid soluble ferrous salt; (2) preparing a hydroxide solution; (3) mixing said hydroxide solution and said ferrous salt solution in a co-current manner for reaction at an alkali ratio of 0.6˜0.8 and a reaction temperature not exceeding 30° C.; (4) after the reaction in step (3) is finished, yielding a first mixture, then charging said first mixture with a gas containing oxygen for oxidation, and controlling the first mixture at a pH value of 6˜8 until the oxidation is finished to yield a second mixture; and (5) filtering, washing with water and drying said second mixture obtained in step (4) to yield the amorphous iron oxide hydroxide.

Abstract: One aspect of an indium tin oxide powder has a specific surface area of 55 m2/g or more, wherein a color tone is from bright yellow to a color of persimmons or a half-width in the peak of (222) plane is 0.6° or less on an X-ray diffraction chart. Another aspect of the indium tin oxide powder has a modified surface, wherein a specific surface area is 40 m2/g or more, a half-width in the peak of (222) plane is 0.6° or less on an X-ray diffraction chart, and a color tone is navy blue (L is 30 or less in a Lab colorimetric system). A method for producing the indium tin oxide powder includes: coprecipitating an indium tin hydroxide by using a tin (Sn2+) compound under conditions in which pH is 4.0 to 9.3, and a temperature of a liquid is 5° C. or higher; and drying and calcining the indium tin hydroxide.

Abstract: The present invention relates to an indium oxide film formed by chemical vapor deposition or atomic layer deposition, or to an oxide film containing indium, and to a method for forming same. By chemical vapor deposition or atomic layer deposition, wherein an indium material that is a liquid at room temperature is used, an oxide film containing indium can be formed on a substrate having a large area, and particularly a substrate for manufacturing a display device.

Abstract: A process for preparing a mesoporous metal oxide, i.e., transition metal oxide, Lanthanide metal oxide, a post-transition metal oxide and metalloid oxide. The process comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to form the mesoporous metal oxide. A mesoporous metal oxide prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous metal oxides. The method comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to control nano-sized wall crystallinity and mesoporosity in the mesoporous metal oxides. Mesoporous metal oxides and a method of tuning structural properties of mesoporous metal oxides.

Abstract: A process comprises (a) combining (1) at least one base and (2) at least one metal carboxylate salt comprising (i) a metal cation selected from metal cations that form amphoteric metal oxides or oxyhydroxides and (ii) a lactate or thiolactate anion, or metal carboxylate salt precursors comprising (i) at least one metal salt comprising the metal cation and a non-interfering anion and (ii) lactic or thiolactic acid, a lactate or thiolactate salt of a non-interfering, non-metal cation, or a mixture thereof; and (b) allowing the base and the metal carboxylate salt or metal carboxylate salt precursors to react.

Abstract: The present invention relates to a zero-waste process for extraction of alumina from different types of bauxite ores and red mud residues and of titanium dioxide from ilmenite. Iron oxide is first reduced to metallic iron above the melting point of C-saturated cast iron alloy which yields a high-C iron alloy and an Al and Ti metal oxide rich slag which is then treated with alkali carbonate to form alkali aluminates and titanates. The alkali aluminates are separated by water leaching from which the hydroxide of alumina is precipitated by bubbling C02. The residue from water leaching is treated with sulphuric acid and Ti02 is precipitated via a hydrolysis route. The process recovers most of the metal values and generates only small quantities of silicious residues at pH 4-5 which can be used for soil conditioning.

Abstract: Provided is a substrate for epitaxial growth, which enables the improvement in quality of a Ga-containing oxide layer that is formed on a ?-Ga2O3 single-crystal substrate. A substrate (1) for epitaxial growth comprises ?-Ga2O3 single crystals, wherein face (010) of the single crystals or a face that is inclined at an angle equal to or smaller than 37.5° with respect to the face (010) is the major face. A crystal laminate structure (2) comprises: the substrate (1) for epitaxial growth; and epitaxial crystals (20) which are formed on the major face (10) of the substrate (1) for epitaxial growth and each of which comprises a Ga-containing oxide.

Abstract: Provided are a conductive layer and a method of manufacturing the same. The conductive layer is formed without, so called, a high temperature process but has suitable crystallinity, excellent transparency and excellent resistance characteristic, and the method of manufacturing the same is also provided.

Abstract: The present invention generally relates to an amorphous semiconductor material and TFTs containing the material. The semiconductor material contains a single cation, such as zinc, and multiple anions. For the multiple anions, only one of the anions can be oxygen or nitrogen. The anions compete with each other to twist the resulting structure. For example, if one of the anions bonded with the cation would result in a cubic structure, and another of the anions bonded with the cation would result in a hexagonal structure, the competing anions would twist the resulting structure so that the structure remains amorphous rather than crystalline. Further, because a single cation is utilized, there is no grain boundary and thus, the material has a high mobility.

Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.

Abstract: Methods of producing a metal oxide are disclosed. The method comprises dissolving a metal salt in a reaction solvent to form a metal salt/reaction solvent solution. The metal salt is converted to a metal oxide and a caustic solution is added to the metal oxide/reaction solvent solution to adjust the pH of the metal oxide/reaction solvent solution to less than approximately 7.0. The metal oxide is precipitated and recovered. A method of producing adsorption media including the metal oxide is also disclosed, as is a precursor of an active component including particles of a metal oxide.

Abstract: Porous metal oxides are provided. The porous metal oxides are prepared by heat treating a coordination polymer. A method of preparing the porous metal oxide is also provided. According to the method, the shape of the particles of the metal oxide can be easily controlled, and the shape and distribution of pores of the porous metal oxide can be adjusted.

Abstract: Methods are described that have the capability of producing submicron/nanoscale particles, in some embodiments dispersible, at high production rates. In some embodiments, the methods result in the production of particles with an average diameter less than about 75 nanometers that are produced at a rate of at least about 35 grams per hour. In other embodiments, the particles are highly uniform. These methods can be used to form particle collections and/or powder coatings. Powder coatings and corresponding methods are described based on the deposition of highly uniform submicron/nanoscale particles.

Abstract: The present disclosure relates to insulation components and their use, e.g., in regenerative reactors. Specifically, a process and apparatus for managing temperatures from oxidation and pyrolysis reactions in a reactor, e.g., a thermally regeneratating reactor, such as a regenerative, reverse-flow reactor is described in relation to the various reactor components.

Abstract: The current invention relates to a method of making metal oxide nanoparticles comprising the reaction of—at least one metal oxide precursor (P) containing at least one metal (M) with—at least one monofunctional alcohol (A) wherein the hydroxy group is bound to a secondary, tertiary or alpha-unsaturated carbon atom—in the presence of at least one aliphatic compound (F) according to the formula Y1—R1—X—R2—Y2, wherein—R1 and R2 each are the same or different and independently selected from aliphatic groups with from 1 to 20 carbon atoms, —Y1 and Y2 each are the same or different and independently selected from OH, NH2 and SH, and —X is selected from the group consisting of chemical bond, —O—, —S—, —NR3—, and CR4R5, wherein R3, R4 and R5 each are the same or different and represent a hydrogen atom or an aliphatic group with from 1 to 20 carbon atoms which optionally carries functional groups selected from OH, NH2 and SH.

Abstract: Provided is an arsenic-containing solid comprising 100 parts by mass of a scorodite-type iron-arsenic compound and at least 1 part by mass of an iron oxide compound added thereto, in which the scorodite-type iron-arsenic compound is produced by adding an oxidizing agent to an aqueous acidic solution that contains a 5-valent arsenic (V) ion and a 2-valent iron (II) ion, then promoting the precipitation of an iron-arsenic compound with stirring the liquid, and finishing the precipitation thereof within a range where the pH of the liquid is at most 1.2. The iron oxide compound includes goethite, hematite and their mixture, preferably having a BET specific surface area of at least 3 m2/g, more preferably at least 20 m2/g.

Abstract: ZnAlO series thermoelectric conversion materials have large thermal conductivity ? about 40 W/mK at room temperature, thus the dimensionless figure of merit ZT remains around 0.3 at 1000 deg C, which is a third of the value required in practical application. An n-type thermoelectric conversion material, comprising aluminum including zinc oxide, which is represented by a general formula: Zn1-x-yAlxGayO (wherein 0.01?x?0.04, 0.01?y?0.03, 0.9?x/y?2.0). ZT value not less than 0.6 can be realized at 1000 deg C. By co-doping Al and Ga into ZnO, the thermal conductivity ? can be significantly reduced maintaining a large electric conductivity ?, resulting in a significant improvement of the thermoelectric performance.

Abstract: Methods are described that have the capability of producing submicron/nanoscale particles, in some embodiments dispersible, at high production rates. In some embodiments, the methods result in the production of particles with an average diameter less than about 75 nanometers that are produced at a rate of at least about 35 grams per hour. In other embodiments, the particles are highly uniform. These methods can be used to form particle collections and/or powder coatings. Powder coatings and corresponding methods are described based on the deposition of highly uniform submicron/nanoscale particles.

Abstract: The present invention includes a method of producing a crystalline metal oxide nanostructure. The method comprises providing a metal salt solution and providing a basic solution; placing a porous membrane between the metal salt solution and the basic solution, wherein metal cations of the metal salt solution and hydroxide ions of the basic solution react, thereby producing a crystalline metal oxide nanostructure.

Abstract: A method of forming a metal oxide nanostructure comprises disposing a chelated oligomeric metal oxide precursor on a solvent-soluble template to form a first structure comprising a deformable chelated oligomeric metal oxide precursor layer; setting the deformable chelated oligomeric metal oxide precursor layer to form a second structure comprising a set metal oxide precursor layer; dissolving the solvent-soluble template with a solvent to form a third structure comprising the set metal oxide precursor layer; and thermally treating the third structure to form the metal oxide nanostructure.

Abstract: A high-strength sputtering target for forming a protective film for an optical recording medium, obtained by sintering a mixed powder containing, in mol %, 10 to 70% of a zirconium oxide or hafnium oxide and 50% or less (over 0%) of silicon dioxide, and 0.1 to 8.4% of yttrium oxide as necessary, and the remainder containing aluminum oxide, lanthanum oxide, or indium oxide and inevitable impurities, wherein a complex oxide phase of Al6Si2O13, La2SiO5, or In2Si2O7 is formed in a base of the target.

Abstract: An object of the present invention is to provide a metal salt-containing composition which is applicable to many metal source materials, and can be used for forming a compact and uniform metal oxide film comparable to those formed according to a sputtering method, as well as to provide a substrate having a metal complex film on the surface thereof obtained using the metal salt-containing composition, and a substrate having a metal complex film on the surface thereof obtained by further heating the substrate. Moreover, another object of the present invention is to provide a method for manufacturing a substrate having such a metal complex film on the surface thereof. According to the present invention, a metal salt-containing composition containing a metal salt, a polyvalent carboxylic acid having a cis-form structure, and a solvent, in which: the molar ratio of the polyvalent carboxylic acid to the metal salt is not less than 0.5 and not more than 4.

Abstract: An indium oxide-based particle is provided. The indium oxide-based particle has a mono-dispersive and spherical non-crystalline structure (spherical morphology with amorphous phase). The diameter of particle is ranged between 0.10 ?m and 0.70 ?m, and the content of an indium oxide is ranged between 10.0 percent by mass and 99.9 percent by mass. The indium oxide-based particle is generated by the precursor with indium ion reacting with alpha hydroxyl acid in an aqueous solution with alkali-modifier additive at a constant temperature. The indium-oxide based particle can be further calcinated as a crystalline indium oxide particle.

Abstract: A process comprises (a) combining (1) at least one base and (2) at least one metal carboxylate salt comprising (i) a metal cation selected from metal cations that form amphoteric metal oxides or oxyhydroxides and (ii) a carboxylate anion comprising from one to four alkyleneoxy moieties, or metal carboxylate salt precursors comprising (i) at least one metal salt comprising the metal cation and a non-interfering anion and (ii) at least one carboxylic acid comprising from one to four alkyleneoxy moieties, at least one salt of the carboxylic acid and a non-interfering, non-metal cation, or a mixture thereof; and (b) allowing the base and the metal carboxylate salt or metal carboxylate salt precursors to react.

Abstract: There are disclosed insulated ultrafine powder comprising electroconductive ultrafine powder which is in the form of sphere, spheroid or acicular each having a minor axis in the range of 1 to 100 nm and an insulating film applied thereto; a process for producing the same which is capable of covering the surfaces of the insulated ultrafine powder with the insulating film having a thickness in the range of 0.3 to 100 nm without causing any clearance or vacancy; and a resin composite material which uses the same. A high dielectric constant of the material is assured by adding a small amount of insulated ultrafine powder wherein an insulating film is applied to the electroconductive ultrafine powder, while maintaining the processability and moldability that are the characteristics inherent in a resin material.

Abstract: A method for manufacturing a cathode active material for a lithium rechargeable battery, including: selecting a first metal compound from a group consisting of a halide, a phosphate, a hydrogen phosphate and a sulfate of Mg or Al; selecting a second metal compound from a group consisting of an oxide, a hydroxide and a carbonate of Mg or Al; combining the first metal compound and the second metal compound to obtain a metal compound, the metal compound containing either Mg or Al atoms; mixing a lithium compound, a transition metal compound and the metal compound to obtain a mixture; and sintering the mixture.

Abstract: A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure.

Abstract: A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base 32 having a primary surface 32a of monoclinic gallium oxide, and a laminate structure 33 of Group III nitride. A semiconductor mesa of the laminate structure 33 includes a low-temperature GaN buffer layer 35, an n-type GaN layer 37, an active layer 39 of a quantum well structure, and a p-type gallium nitride based semiconductor layer 37. The p-type gallium nitride based semiconductor layer 37 includes, for example, a p-type AlGaN electron block layer and a p-type GaN contact layer. The primary surface 32a of the gallium oxide support base 32 is inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of monoclinic gallium oxide.

Abstract: The oxide sintered body mainly consists of gallium, indium, and oxygen, and a content of the gallium is more than 65 at. % and less than 100 at. % with respect to all metallic elements, and the density of the sintered body is 5.0 g/cm3 or more. The oxide film is obtained using the oxide sintered body as a sputtering target, and the shortest wavelength of the light where the light transmittance of the film itself except the substrate becomes 50% is 320 nm or less. The transparent base material is obtained by forming the oxide film on one surface or both surfaces of a glass plate, a quartz plate, a resin plate or resin film where one surface or both surfaces are covered by a gas barrier film, or on one surface or both surfaces of a transparent plate selected from a resin plate or a resin film where the gas barrier film is inserted in the inside.

Abstract: An optical element is disclosed which includes transparent superconductor material.

Abstract: The present invention relates to a method of precipitation of metal ions. Mineral(s), oxide(s), hydroxide(s) of magnesium and/or calcium are adopted as raw materials, and the raw material(s) is processed through at least one step of calcination, slaking, or carbonization to produce aqueous solution(s) of magnesium bicarbonate and/or calcium bicarbonate, and then the solution(s) is used as precipitant(s) to deposit rare earth, such as nickel, cobalt, iron, aluminum, gallium, indium, manganese, cadmium, zirconium, hafnium, strontium, barium, copper and zinc ions. And at least one of metal carbonates, hydroxides or basic carbonates is obtained, or furthermore the obtained products are calcined to produce metal oxides. The invention takes the cheap calcium and/or magnesium minerals or their oxides, hydroxides with low purity as raw materials to instead common precipitants such as ammonium bicarbonate and sodium carbonate etc.

Abstract: Process for preparing a mixed metal oxide powder, in which oxidizable starting materials are evaporated and oxidized, the reaction mixture is cooled after the reaction and the pulverulent solids are removed from gaseous substances, wherein as starting materials, at least one pulverulent metal and at least one metal compound, the metal and the metal component of the metal compound being different and the proportion of metal being at least 80% by weight based on the sum of metal and metal component from metal compound, together with one or more combustion gases, are fed to an evaporation zone of a reactor, where metal and metal compound are evaporated completely under nonoxidizing conditions, subsequently, the mixture flowing out of the evaporation zone is reacted in the oxidation zone of this reactor with a stream of a supplied oxygen-containing gas whose oxygen content is at least sufficient to oxidize the starting materials and combustion gases completely.

Abstract: To provide a method of production of an exhaust gas purification catalyst support preventing a drop in the heat resistance of alumina or other catalyst support due to the presence of titania and provided with a sulfur poisoning suppression action by titania and an exhaust gas purification catalyst support produced by the same. A method of production of an exhaust gas purification catalyst support comprising, in a basic solution, making alumina particles adsorb ammonium ions and then bringing titania sol into contact with the alumina particle so as to make the alumina particles adsorb the titania particles. An exhaust gas purification catalyst support where at least base points on the alumina particle surfaces adsorb titania particles and the pH does not rise when immersed in an ammonium nitrate solution.

Abstract: Methods of producing a metal oxide are disclosed. The method comprises dissolving a metal salt in a reaction solvent to form a metal salt/reaction solvent solution. The metal salt is converted to a metal oxide and a caustic solution is added to the metal oxide/reaction solvent solution to adjust the pH of the metal oxide/reaction solvent solution to less than approximately 7.0. The metal oxide is precipitated and recovered. A method of producing adsorption media including the metal oxide is also disclosed, as is a precursor of an active component including particles of a metal oxide.

Abstract: A method of synthesizing metal chalcogenide nanocrystals involving the steps of combining an organodichalcogenide, a metal salt and a ligand compound to form a mixture; degassing the mixture to remove air and water from the mixture; heating the mixture at a temperature below the decomposition temperature of the organodichalcogenide for a period of time sufficient to form a metal chalcogenide nanocrystal.

Abstract: A method of synthesizing nanostructures. In one embodiment, the method includes the step of heating a reaction mixture at an elevated temperature, T, for a period of time effective to allow the growth of desired nanostructures. The reaction mixture contains an amount, P, of a carboxylate salt and an amount, L, of a fatty acid ligand, defining a molar ratio of the fatty acid ligand to the carboxylate salt, ?=L/P, and a hydrocarbon solvent. The reaction mixture is characterizable with a critical ligand protection, ?, associating with the chemical structure of the carboxylate salt such that when ?<?, the reaction mixture is in a limited ligand protection (LLP) domain, and when ?>?, the reaction mixture is in a sufficient ligand protection (SLP) domain.

Abstract: A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×10?3?·cm to 8.0×10?3?·cm, a film thickness is 500 nm or less, and a transmittance of light at a wavelength of 380 nm is 45% or more.

Abstract: A procedure for obtaining mixed multimetallic oxides derived from hydrotalcite type compounds, characterized in that the laminar metallic hydroxides obtained are constituted by three or four metallic cations, forming part of the sheets of the hydrotalcite type material represented by the formula: [M(II)1?x?y?zM(II)?xM(III)yM(III)?z(OH)2](An?y+z/n).mH2O. by a process comprising: (1) preparing an aqueous or organic solution containing three or more cations; (2) preparing an alkaline solution; (3) slowly combining solutions (1) and (2) to cause the co-precipitation of the cations in the form of hydroxides; (4) washing the precipitate containing the hydrotalcites with water, until removal of the non-precipitated ions; (5) drying; and (6) calcining the hydrotalcites.

Abstract: A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×10?3 ?·cm to 8.0×10?3 ?·cm a film thickness is 500 nm or less, and a transmittance of light at a wavelength of 380 nm is 45% or more.

Abstract: The invention relates to amphiphilic, nanoscalar particles comprising lipophilic hydrolyzable groups on their surface. The invention also relates to methods for producing amphiphilic, nanoscalar particles and to compositions containing said particles.

Abstract: The present invention provides methods for treating or preventing diseases and disorders caused by iron-dependent pathogenic microorganisms, such as bacteria, fungi, and parasites, by applying a gallium compound to an affected area. In particular, the present invention provides methods for treating or preventing dental caries, vaginal infections, skin infections, and so forth. Gallium compounds can be formulated as toothpaste, mouthwash, cream, ointment, gel, solution, eye drops, suppository, and the like. Furthermore, the invention provides methods for controlling microbial growth on environmental surfaces, including those of toothbrush, denture, dental retainer, contact lens, catheter, food stuff, and so forth. In addition, the present invention provides animal feeds which contain gallium compounds that promote the animal growth and prevent the animals from infections as well as protect consumers from post processing infections.

Abstract: It is an object of the present invention to provide an active material for lithium ion battery capable of producing a lithium ion battery having an excellent high rate charge and discharge performance and a lithium ion battery having an excellent high rate charge and discharge performance. The present invention provides an active material for lithium ion battery represented by a composition formula: Li[Li(1-x)/3AlxTi(5-2x)/3]O4 (??x<1) lithium titanate is substituted with Al, and a lithium ion battery using this active material as a negative electrode active material.

Abstract: Methods for preparing high quality and high yields of nanocrystals, i.e., metal-oxide-based nanocrystals, using a novel solvent-free method. The nanocrystals advantageously comprise organic alkyl chain capping groups and are stable in air and in nonpolar solvents.

Abstract: A method of synthesizing metal chalcogenide nanocrystals involving the steps of combining an organodichalcogenide, a metal salt and a ligand compound to form a mixture; degassing the mixture to remove air and water from the mixture; heating the mixture at a temperature below the decomposition temperature of the organodichalcogenide for a period of time sufficient to form a metal chalcogenide nanocrystal.

Abstract: A process of producing a ceramic powder including providing a plurality of precursor materials in solution, wherein each of the plurality of precursor materials in solution further comprises at least one constituent ionic species of a ceramic powder, combining the plurality of precursor materials in solution with an onium dicarboxylate precipitant solution to cause co-precipitation of the ceramic powder precursor in a combined solution; and separating the ceramic powder precursor from the combined solution. The process may further include calcining the ceramic powder precursor.