Abstract: The invention provides a graphene film producing method that can produce large-area graphene without requiring high temperature, an electronic element manufacturing method with which a resist FET circuit pattern can easily be formed on an element substrate, and that can be easily applied to an area-increasing process by integrating elements, and a method for transferring a graphene film to a substrate, whereby a large-area graphene film can be isolated, and a graphene film of a desired size can be transferred to a desired position of a substrate. The method is characterized by the step of contacting an amorphous carbon film to a liquid metal such as gallium to form a graphene film at the contact interface.

Abstract: Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such as by chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part and that also divides the holes into one or more other portions. In some embodiments, the aspect ratios of the one or more other portions are about 15:1 or less, or about 7:1 or less, and have a cylindrical or conical cross-sectional shape. The holes are coated with a protective coating, such as a silicon carbide coating, by chemical vapor deposition, including chemical vapor deposition at atmospheric pressure.

Abstract: The present invention relates to an oxide film forming method and an oxide deposition apparatus, which make it possible to form an oxide film at a low temperature of 350° C. or less by respectively supplying a silicon-containing gas including at least one of SiH4, Si2H6, Si3H8, TEOS, DCS, HCD and TSA, a purge gas, and a reaction gas including at least one of O2, N2O, O3, H2O and H2O2 into a reaction space continuously and simultaneously while rotating gas injector, and to form an oxide film with a uniform thickness along a step of a lower structure with a micro-pattern since step coverage is improved due to an atomic layer deposition process.

Abstract: The producing of shells of silicon carbide including CVD and CVI processes: A dense layer of silicon carbide is deposited upon the hollow shells, the shells being agitated during deposition to prevent sticking, bonding, or adhesion of shells to one another.

Abstract: A method for forming a silicon carbide film containing Si, C, O, H, and optionally N on a substrate placed in a reaction space, includes the steps of: introducing into the reaction space a precursor containing Si, C, O, and H and having at least one Si—O bond in its molecule; introducing into the reaction space an inert gas; applying RF power in the reaction space, wherein a ratio of a flow rate (sccm) of the inert gas to the RF power (W/cm2) is controlled at 30-850; and thereby depositing on the substrate a silicon carbide film containing Si, C, O, H, and optionally N.

Abstract: Discontinuous diamond particulate containing metal matrix composites of high thermal conductivity and methods for producing these composites are provided. The manufacturing method includes producing a thin reaction formed and diffusion bonded functionally graded interactive SiC surface layer on diamond particles. The interactive surface converted SiC coated diamond particles are then disposed into a mold and between the particles and permitted to rapidly solidify under pressure. The surface conversion interactive SiC coating on the diamond particles achieves minimal interface thermal resistance with the metal matrix which translates into good mechanical strength and stiffness of the composites and facilitates near theoretical thermal conductivity levels to be attained in the composite. Secondary working of the diamond metal composite can be performed for producing thin sheet product.

Abstract: A metal implant, in particular a dental implant, with a hydrophilic surface for at least partial insertion into a bone, and a method for the production of said implant are described. A particularly advantageous hydrophilic surface for improved osteointegration properties is made available if it is briefly treated, at least in some areas, in a weakly alkaline solution. These excellent osteointegration properties can be achieved in a method in which, optionally after a preceding mechanical surface modification by material removal and/or chemical surface modification, at least the areas exposed of this surface exposed to bone and/or soft tissue are chemically modified in an alkaline solution.

Abstract: An Si—O containing hydrogenated carbon film as an optical film has a refractive index in a range from at least 1.48 to at most 1.85 for light of 520 nm wavelength and an extinction coefficient of less than 0.15 for light of 248 nm wavelength, wherein the refractive index and the extinction coefficient are decreased with energy beam irradiation. By utilizing such an Si—O containing hydrogenated carbon film, it is possible to provide various types of optical elements and an optical device including the same.

Abstract: Inserts are used to line openings in parts that form a semiconductor processing reactor. In some embodiments, the reactor parts delimit a reaction chamber. The reactor parts may be formed of graphite. A layer of silicon carbide is deposited on surfaces of the openings in the reactor parts and the inserts are placed in the openings. The inserts are provided with a hole, which can accept another reactor part such as a thermocouple. The insert protects the walls of the opening from abrasion caused by insertion of the other reactor part into the opening.

Abstract: In a manufacturing flow for adapting the band gap of the semiconductor material with respect to the work function of a metal-containing gate electrode material, a strain-inducing material may be deposited to provide an additional strain component in the channel region. For instance, a layer stack with silicon/carbon, silicon and silicon/germanium may be used for providing the desired threshold voltage for a metal gate while also providing compressive strain in the channel region.

Abstract: A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.

Abstract: The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the dielectric layer comprises SiC and/or SiOC, and is obtained from at least one precursor comprising at least one —Si—C<SUB>n</SUB>—Si chain where n=1.

Abstract: A method is provided for forming high dielectric constant (high-k) films for semiconductor devices. According to one embodiment, a metal-carbon-oxygen high-k film is deposited by alternately and sequentially exposing a substrate to a metal-carbon precursor and near saturation exposure level of an oxidation source containing ozone. The method is capable of forming a metal-carbon-oxygen high-k film with good thickness uniformity while impeding growth of an interface layer between the metal-carbon-oxygen high-k film and the substrate. According to one embodiment, the metal-carbon-oxygen high-k film may be treated with an oxidation process to remove carbon from the film.

Abstract: A monomolecular carbon-based film can be placed on an aircraft part, such as the leading edge designed to directly impinge against air during flight, ascent or descent, in order to form a smooth surface having increased lubricity and reduced air friction. The aircraft part may be in the form of a helicopter rotor, wing, propeller, fin, aileron, nose cone, and the like. The monomolecular carbon-based film can be deposited on the aircraft part, for example, using a reactor that includes a bed of silica and through which emissions from a diesel engine are passed. The monomolecular carbon-based film decreases air friction and increased lift of a modified aircraft that includes an aircraft part treated with the film.

Abstract: A coated cutting tool includes a substrate and a PVD coating having an outermost zone C being a nitride, carbide, boride, or mixtures thereof, of Si and at least two additional elements selected from Al, Y, and groups 4, 5 or 6 of the periodic table and zone C is free from a compositional gradient of an average content of Si. Zone C has a laminar, aperiodic, multilayered structure with alternating individual layers X and Y having different compositions from each other. The coating further includes a zone A closest to the substrate, a transitional zone B, where zone A is essentially free from Si, zone B includes a compositional gradient of the average content of Si, and where the average content of Si is increasing towards zone C.

Abstract: A carrier for an object, preferably a substrate of a semiconductor component such as a wafer, includes a receiving element for the object and gas outlets arranged below the receiving element along the object received. At least sections of the carrier are made of a material which including stabilizing fibers and having a porosity which forms the gas outlets, in order to enable a desired gas to exit from the gas outlets in a dosed and finely distributed manner.

Abstract: A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 ?s and about 9.9 ?s.

Abstract: A diamond thin film coating method is provided that enables, with no need for an intermediate layer, the formation of a diamond thin film, which has conventionally been considered difficult because cobalt contained in a binding phase of a cemented carbide provides a catalysis for the formation of graphite. Cobalt in a binding phase (11) present in a surface of a cemented carbide substrate member comprised of a hard phase of a carbide (2) and a binding phase (1) containing cobalt, is silicidated into silicide (3), and thereafter the diamond thin film is formed.

Abstract: Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems.

Abstract: Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such as by chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part and that also divides the holes into one or more other portions. In some embodiments, the aspect ratios of the one or more other portions are about 15:1 or less, or about 7:1 or less, and have a cylindrical or conical cross-sectional shape. The holes are coated with a protective coating, such as a silicon carbide coating, by chemical vapor deposition, including chemical vapor deposition at atmospheric pressure.

Abstract: A transparent conductive film containing magnesium, at least one element (A) selected from the group consisting of carbon, silicon and boron, plus oxygen, and hydrogen. For example, this transparent conductive film may be manufactured by forming a film containing magnesium and an element (A) on a substrate and holding the film in an atmosphere containing water, which forming uses a target containing magnesium and a target containing the element (A) being at least one selected from the group consisting of carbon, silicon and boron.

Abstract: A coating includes a thin film which is intended to protect a corrodible part against corrosion and, to some extent, against wear and friction. The coating essentially includes a composition containing silicon, carbon, hydrogen and nitrogen such that: the atomic hydrogen concentration, measured using the ERDA technique, is 20 ±5 atoms %; the atomic silicon concentration, measured using the Rutherford backscattering (RBS) technique, is between 15 and 28 atoms %; the ratio of the atomic concentrations of nitrogen and carbon (N/C) is greater than 0.9; and the hardness of the material is less than or equal to 2100 daN/mm2.

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.

Abstract: Systems and techniques involving optical coatings for semiconductor devices. An implementation includes a substantially isotropic, heterogeneous anti-reflective coating having a substantially equal thickness normal to any portion of a substrate independent of the orientation of the portion.

Abstract: A method for forming interphase layers in ceramic matrix composites. The method forms interphase layers in ceramic matrix composites thereby enabling higher matrix densities to be achieved without sacrificing crack deflection and/or toughness. The methods of the present invention involve the use fugitive material-coated fibers. These fibers are then infiltrated with a ceramic matrix slurry. Then, the fugitive material is removed and the resulting material is reinfiltrated with an interphase layer material. The ceramic matrix composite is then fired. Additional steps may be included to densify the ceramic matrix or to increase the strength of the interphase layer. The method is useful for the formation of three dimensional fiber-reinforced ceramic matrix composites envisioned for use in gas turbine components.

Abstract: Methods of forming ceramic components are disclosed. One method calls for chemical vapor depositing a ceramic material over a substrate having first and second opposite surfaces to define a coated structure, the ceramic material forming a layer overlying both the first and second opposite surfaces. The layer and the substrate have a difference in thermal expansion coefficients of at least 0.5 ppm/K. The substrate is removed, leaving behind the layer. Ceramic components and coated structures are also disclosed.

Abstract: A process for producing bismuth-containing oxide thin films by Atomic Layer Deposition, including using an organic bismuth compound having at least one silylamido ligand as a source material for the bismuth oxide. Bismuth-containing oxide thin films produced by the preferred embodiments can be used, for example, as ferroelectric or dielectric material in integrated circuits and/or as superconductor materials.

Abstract: An optical information recording medium that can simultaneously achieve both a high transmittance and high signal quality of an information layer, improve the reliability of long-term conservation, and reduce the manufacturing cost, and a manufacturing method thereof are provided. To achieve this, according to the present invention, in an optical information recording medium comprising at least one information layer on a substrate, at least one of the information layers has a recording layer and a dielectric layer, the recording layer contains Te, O, and M (M is one or a plurality of elements selected from Au, Pd, and Pt) as major components, the dielectric layer has a thermal conductivity of 0.01 W/K·cm or more, and the dielectric layer has an extinction coefficient of 0 through 1.0 inclusive.

Abstract: A method for forming a porous insulating film includes an insulating film forming step and a hole forming step. During the insulating film forming step, plasma processing of an organic siloxane group compound and an organic compound having a polar group forms an insulating film having a siloxane structure. Molecules of the organic compound having a polar group are contained within this siloxane structure. During the hole forming step, excitation gas removes molecules of the organic compound having a polar group to provide holes in the insulating film. According to this method, an insulating film with a predetermined thickness and holes formed uniformly in the thickness direction can be obtained.

Abstract: A tubular body includes a tubular fiber-reinforced carbonaceous substrate and an SiC layer. The tubular fiber-reinforced carbonaceous substrate includes an aggregate formed of ceramic fibers, and a carbonaceous material filled in interstices between the ceramic fibers. The SiC layer is formed at least on an outer surface of the tubular fiber-reinforced carbonaceous substrate in which silicon atoms are diffused from a boundary region between the fiber-reinforced carbonaceous substrate and the SiC layer to an inside of the fiber-reinforced carbonaceous substrate.

Abstract: A semiconductor device in which the diffusion of copper from a wire is prevented and a method for fabricating such a semiconductor device. For example, a via groove and a wire groove are formed in a multilayer structure including a UDC diffusion barrier film, a porous silica film, a middle UDC stopper film, a porous silica film, a UDC diffusion barrier film, and the like, and the surfaces the UDC diffusion barrier film, the middle UDC stopper film, and the UDC diffusion barrier film that get exposed in the via groove and the wire groove are irradiated with hydrogen plasma, thereby making the surface of each exposed SiC film silicon-rich. After the plasma irradiation, a Ta film is formed in the via groove and the wire groove and copper is embedded in these grooves. By making the surface of each SiC film which is to touch the Ta film silicon-rich in advance, the crystal structure of the Ta film can be controlled so that copper cannot pierce through the Ta film. This prevents copper from diffusing from a wire.

Abstract: A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps/acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps/acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.

Abstract: A coated product is disclosed consisting of a metallic substrate and a composite coating wherein at least one component of the composite coating is of MAX material type. Furthermore, a method of producing such a coated product is disclosed using vapour deposition technique in a continuous roll to roll process.

Abstract: A firing jig for a honeycomb molded body includes a housing body configured to place a pillar-shaped honeycomb molded body including silicon carbide as a main component with a side face of the honeycomb molded body facing down, and a coat layer formed on at least a placing face of the housing body configured to place the honeycomb molded body thereon. A main component of the coat layer is silicon carbide, the coat layer having an arithmetic average height Ra of about 10 ?m or less obtained in conformity with JIS B 0601 (2001).

Abstract: A method of forming an amorphous carbon layer using a cross type hydrocarbon compound as a precursor and a method of forming a low-k dielectric layer using the same are disclosed. The present invention includes a step (a) of vaporizing a precursor containing a cross type hydrocarbon compound, a step (b) of supplying the vaporized precursor and a additive gas into a reaction chamber via a shower head, wherein the precursor and the additive gas are changed into plasma state, and a step (c) of depositing the amorphous carbon layer for the hard mask or the low-k dielectric in the reaction chamber.

Abstract: An insulating film material formed by chemical vapor deposition, which contains an organic silane compound having such a structure that at least one secondary hydrocarbon group and/or tertiary hydrocarbon group is directly bonded to a silicon atom.

Abstract: Discontinuous diamond particulate containing metal matrix composites of high thermal conductivity and methods for producing these composites are provided. The manufacturing method includes producing a thin reaction formed and diffusion bonded functionally graded interactive SiC surface layer on diamond particles. The interactive surface converted SiC coated diamond particles are then disposed into a mold and between the particles and permitted to rapidly solidify under pressure. The surface conversion interactive SiC coating on the diamond particles achieves minimal interface thermal resistance with the metal matrix which translates into good mechanical strength and stiffness of the composites and facilitates near theoretical thermal conductivity levels to be attained in the composite. Secondary working of the diamond metal composite can be performed for producing thin sheet product.

Abstract: The present inventions pertain to a method of applying a solid protective coating to articles, to a system capable of depositing a solid film layer on articles, and to hermetically sealed articles. In particular, films are deposited on fused quartz substrates, optical fibers, and other items requiring a hermetic seal by a single or multiple beams laser-induced chemical vapor deposition [LCVD]. According to the present inventions, the protective layer can be deposited on the articles to be hermetically sealed in an open environment at atmospheric pressure and ambient temperature whereby the coating process may occur outside the confines of an enclosure. A coaxial precursor and non-reactive laminar gas jet configuration insulates the deposition area from oxygen and other aerial impurities.

Abstract: The present inventions pertain to a method of applying a solid protective coating to articles, to a system capable of depositing a solid film layer on articles, and to hermetically sealed articles. In particular, films are deposited on fused quartz substrates, optical fibers, and other items requiring a hermetic seal by a single or multiple beams laser-induced chemical vapor deposition [LCVD]. According to the present inventions, the protective layer can be deposited on the articles to be hermetically sealed in an open environment at atmospheric pressure and ambient temperature whereby the coating process may occur outside the confines of an enclosure. A coaxial precursor and non-reactive laminar gas jet configuration insulates the deposition area from oxygen and other aerial impurities.

Abstract: A method for cleaning a process chamber in such a manner that chamber-cleaning chemicals or agents are incapable of remaining in the chamber after cleaning and chemically interfering with semiconductor fabrication or other processes subsequently carried out in the chamber. The method includes providing a repellant coating layer having a hydrophobic or hydrophilic polarity on the interior surfaces of a process chamber and using a cleaning agent having a polarity opposite that of the repellant coating layer to clean the chamber. Accordingly, the cleaning agent removes post-processing chemical residues from the interior chamber walls and other surfaces and is incapable of adhering to the surfaces and remaining in the chamber upon commencement of a subsequent process carried out in the chamber.

Abstract: A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber toward the substrate, the reactive gases comprising components that are able to bond to each other to form the crystal, and flowing buffer gas in the reactor chamber between the reactive gases and a wall of the reactor, where the flowing buffer gas inhibits at least one of a first material at least one of in and produced by the reactive gases from reaching the reactor wall and a second material produced by the reactor wall from reaching the reactive gases in the reactor chamber before the reactive gases reach the substrate.

Abstract: A protective layer for a susceptor is prepared. The susceptor is a graphite block; and the protective layer consists of a titanium nitride film and a titanium carbide film. The susceptor with the protective layer is used in epitaxial growth and device process with life time prolonged, energy saved, and cost reduced.

Abstract: The invention relates to a coating and apparatus and method for applying the same, said coating including Diamond Like Carbon (DLC) applied by chemical vapor deposition using a pulsed DC biased power supply, typically having an initial metal layer and followed by a transitional metal carbide layer and a DLC layer. The depths and transitions between the materials can be selected to suit requirements. The apparatus also includes the use of an arrangement with at least one electrode with an RF power supply and the selective control of the power supplies to the electrode and substrates is used to improve the efficiency of application.

Abstract: Workpiece with at least one functional face and a layer system deposited on at least a portion of the functional face as well as a structure pattern, which encompasses at least a portion of the layer system and which is comprised of at least one three dimensional micro structure (5) with structure depth S, characterized in that the deposited layer system is deposited with PVD, CVD or combined PCD/CVD processes, and the three dimensional micro structure (5) extends from the surface of the layer system (4) up into the workpiece, such that the latter is uncoated in a lower region of the micro structure (5).

Abstract: A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.

Abstract: A method for making a ceramic matrix composite turbine engine component, wherein the method includes providing a plurality of biased ceramic plies, wherein each biased ply comprises ceramic fiber tows, the tows being woven in a first warp direction and a second weft direction, the second weft direction lying at a preselected angular orientation with respect to the first warp direction, wherein a greater number of tows are woven in the first warp direction than in the second weft direction. The plurality of biased plies are laid up in a preselected arrangement to form the component, and a preselected number of the plurality of biased plies are oriented such that the orientation of the first warp direction of the plies lie about in the direction of maximum tensile stress during normal engine operation. A coating is applied to the plurality of biased plies. The coated component preform is then densified.

Abstract: A method for seasoning a process chamber is disclosed. The seasoning method includes providing a seasoning film on the interior surfaces of a process chamber, typically after cleaning of the chamber.

Abstract: A method and superalloy component for depositing a layer of material onto gas turbine engine components by atomic layer deposition. A superalloy component may have a ceramic thermal barrier coating on at least a portion of its surface, comprising a superalloy substrate and a bonding coat; and aluminum oxide (Al2O3) layer may be deposited on top of an yttria-stabilized zirconia layer and form a bonding coat by atomic layer deposition. The yttria-stabilized zirconia layer may have a plurality of micron sized gaps extending from the top surface of the ceramic coating towards the substrate and defining a plurality of columns of the yttria-stabilized zirconia layer. Also, atomic layer deposition may be used to lay an aluminum oxide (Al2O3) layer over a tantalum oxide (Ta2O5) layer on a silicon-based substrate.

Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.