Abstract: A product produced in a PVD method is described, which consists of thin plane-parallel structures having a thickness in the range from 20 to 2000 nm and small dimensions in the range below one mm. Production is carried out by condensation of silicon suboxide onto a carrier passing by way of the vaporisers. The carrier is pre-coated, before condensation of the silicon suboxide, with a soluble, inorganic or organic separating agent in a PVD method. All steps, including that of detaching the product by dissolution, can be carried out continuously and simultaneously at different locations. As final step, the SiOy may be oxidised to SiO2 in an oxygen-containing gas at atmospheric pressure and temperatures of more than 200° C. or SiOy may be converted to SiC at the surface of the plane-parallel structures in a carbon-containing gas at from 500° C. to 1500° C. The products produced in that manner are distinguished by high uniformity of thickness.

Abstract: A method for forming IMD films. A substrate is provided. A plurality of dielectric films are formed on the substrate, wherein each of the dielectric layers are deposited in-situ in one chamber with only one thermal cycle.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10–250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10–30% of the duty cycle.

Abstract: A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.

Abstract: The embodiments of the invention relate to a MoSi2-SiC nanocomposite coating layer formed on surfaces of refractory metals such as Mo, Nb, Ta, W and their alloys. The MoSi2-SiC nanocomposite coating layer is manufactured by forming a molybdenum carbide (MoC and MoC2) coating layers on the surfaces of the substrates at high temperature, and the subsequent vapor-deposition of Si. The MoSi2-SiC nanocomposite coating layer has a microstructure in which SiC particles are mostly located on the equiaxed MoSi2 grain boundary. The MoSi2-SiC nanocomposite coating layer can have a close thermal expansion coefficient to that of the substrate by controlling a volume fraction of SiC particles exisiting in the nanocomposite coating.

Abstract: An insulating film material formed by chemical vapor deposition, which contains an organic silane compound having such a structure that at least one secondary hydrocarbon group and/or tertiary hydrocarbon group is directly bonded to a silicon atom.

Abstract: Hybrid films, such as those having good abrasion-resistance and defogging properties, antireflection films including it, optical products, and methods for restoring the defogging property of the hybrid films are disclosed. The hybrid films having a defogging property may be obtained through vapor deposition of an organic compound having a hydrophilic group and a reactive group along with silicon dioxide or with silicon dioxide and aluminum oxide. The antireflection film may be formed on a substrate having the hybrid film as the outermost layer opposite to the substrate. The optical product may comprise a plastic substrate and the antireflection film having the hybrid film. A method for restoring the defogging property of the hybrid film of the optical product may include washing the hybrid film.

Abstract: Refractory carbide particles are located in a defined area of a matrix, specifically silicon carbide particles are encapsulated within a porous matrix or carbon precursor, by locating particles of refractory carbide-forming material or a precursor thereof in a defined area of the matrix followed by depositing carbon within the matrix at a temperature below that of the melting point of the carbide-forming material.

Abstract: In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the precursor(s). In certain embodiments, at least a portion of the hydrocarbon substituents may be later removed from the dielectric layer to reduce density thereof.

Abstract: Substrates have a hydrophobic surface coating comprised of the reaction products of methyltrichlorsilane (MTCS) and dimethyldichlorosilane (DMDCS). Most preferably the substrate is glass. An anchor layer is most preferably formed directly onto the glass substrate surface by means of the application of a humidified reaction product of silicon tetrachloride, followed by the vapor-deposition of MTCS as a cross-linking layer. The hydrophobic layer of MTCS and DMDCS may then be applied over the cross-linking layer of MTCS. A capping layer formed of trimethylchlorosilane (TMCS) may then be vapor deposited onto the hydrophobic layer.

Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

Abstract: A material containing, as a main component, an organic silicon compound represented by the following general formula: R1xSi(OR2)4-x (where R1 is a phenyl group or a vinyl group; R2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component. As the organic silicon compound where R1 is a phenyl group, there can be listed phenyltrimethoxysilane or diphenyldimethoxysilane. As the organic silicon compound where R1 is a vinyl group, there can be listed vinyltrimethoxysilane or divinyldimethoxysilane.

Abstract: A method for joining high-purity ceramic parts useful as parts for semi-conductor production apparatus, in particular, ceramic jigs used in the production of semi-conductors. Two related joining methods are described. First, high purity ceramic parts made of silicon carbide are placed in contact with each other and a layer of silicon carbide is coated around the two SiC pieces by chemical vapor deposition (CVD). This vapor deposited coating serves to bind the parts tightly together. In a second procedure, the ceramic elements are placed next to each other at a spaced distance, preferably from 10–1,000 um. The space between the two ceramic elements is filled with SiC using a vapor deposition (CVD) technique. The resultant structure is such that the outer layers of the ceramic elements are continuously integrated with each other via SiC the ceramic material vapor deposited in the space. Combinations of the first and second procedures are taught.

Abstract: A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.

Abstract: The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber. Said process chamber is formed by the cavity of an especially multi-part graphite tube arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber, is enclosed by a high-frequency coil and the space between the reactor housing wall and the graphite tube is filled with a graphite foam sleeve. In order to improve heat insulation, the graphite foam sleeve is fully slit. The slot is wider than the maximum thermal elongation of the graphite foam sleeve in the peripheral direction to be expected when the device is heated up to process temperature.

Abstract: The present invention relates to a method for manufacturing a diamond composite from diamond particles, comprising the steps of forming a work piece, heating the work piece and controlling the heating temperature and heating time so that a certain desired amount of graphite is created by graphitization of diamond particles, thereby creating an intermediate body, and infiltrating silicon or silicon alloy into the intermediate body. The invention also relates to a diamond composite produced by this method.

Abstract: A SiC-based layer is deposited on a substrate having an electrical resistivity between about 1 and 100 ? cm. The substrate is disposed in a process chamber. A gaseous mixture having a silicon-containing gas and a hydrocarbon-containing gas is flowed to the process chamber. A high-density plasma, having an ion density greater than about 1011 ions/cm3 is generated from the plasma. A small electrical bias, between about 0.65 and 1.30 W/cm2, is applied to the substrate. The low bias compensates for an unexpected cooling that results when depositing the SiC-based layer but is low enough that implantation of hydrogen is minimized.

Abstract: A method for making a dry plating built-up film comprises providing silicon carbide as a starting source and subjecting to dry plating while changing a concentration of a reactive gas continuously or intermittently to deposit and form, on a substrate, a thin film having different refractive indices along its thickness. A method for making a sputter built-up film is also described, which comprising providing silicon carbide as a target and subjecting to sputtering while changing making electric power against the target continuously or intermittently to deposit and form a thin film having different refractive indices along its thickness.

Abstract: A nitrogen-doped n-type SiC-formed material consisting of high purity ?-type crystals, which exhibits low resistivity and low light transmittance and is suitably used as a substrate for semiconductor fabricating devices, and a method of manufacturing the SiC-formed material by which the SiC-formed material is obtained at high productivity and improved deposition rate. The SiC-formed material is produced by the CVD method introducing nitrogen gas together with raw material gases and a carrier gas to form a SiC film on a substrate, and removing the substrate. The material has a specific gravity of 3.15 or more, light transmittance of 1.1 to 0.05%, and resistivity of 3×10?3 to 10?5 ?m.

Abstract: A method and apparatus are provided for protecting internal aluminum components of a plasma reactor from plasma-induced erosion. The components are coated, first with a dielectric layer, then with a thin layer of one or more metals selected from the group consisting of gold, chromium, platinum, silver and rhenium. The dielectric layer may either be grown or deposited. The metal layer is deposited, preferably using evaporative deposition.

Abstract: A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.

Abstract: This invention relates to methods of preparing oxidation protective multiple coating layers for carbon/carbon composites. More specifically, the invention is directed to a method of applying an oxidation protective multiple coating to a carbon/carbon composite. The method is characterized by the formation of two or more layers of coating on the carbon/carbon composite by using Si.

Abstract: A family of extremely fine-grained alloys are used to make coatings or free-standing bodies having desirable properties for use as a heat-resistant and wear-resistant material. In an illustrative embodiment, the alloys are comprised of a multiplicity of alternate, microcrystalline or nanocrystalline films of tungsten metal and tungsten compound. The tungsten compound film may be comprised of a tungsten carbide or a tungsten boride. The tungsten films are the primary films. Their desirable characteristics, in addition to their very fine crystalline habit, per se, are the high strength, high hardness, high resilience, and high fracture energy which these fine crystallites foster. They may be manufactured by a chemical vapor deposition process in which reactive gas flows are rapidly switched to produce alternate films with abrupt hetero-junctions and thereby to produce the useful micro-crystalline habit. The unique synthesis method allows effective control of critical flaw size.

Abstract: The present invention generally provides improved adhesion and oxidation resistance of carbon-containing layers without the need for an additional deposited layer. In one aspect, the invention treats an exposed surface of carbon-containing material, such as silicon carbide, with an inert gas plasma, such as a helium (He), argon (Ar), or other inert gas plasma, or an oxygen-containing plasma such as a nitrous oxide (N2O) plasma. Other carbon-containing materials can include organic polymeric materials, amorphous carbon, amorphous fluorocarbon, carbon containing oxides, and other carbon-containing materials. The plasma treatment is preferably performed in situ following the deposition of the layer to be treated. Preferably, the processing chamber in which in situ deposition and plasma treatment occurs is configured to deliver the same or similar precursors for the carbon-containing layer(s). However, the layer(s) can be deposited with different precursors.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

Abstract: A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate. The method further comprises producing an electric field in the reaction zone. The electric field is generated using low and high frequency RF energy produced by an RF power supply. The RF power supply generates power at an electrode surface used for plasma discharge in the reaction zone. The method further comprises reacting the silicon and carbon source gas to deposit a silicon carbide film on the substrate. The RF power supply generates high energy RF power and low energy RF power during a processing period.

Abstract: A new method of creating a relatively thick layer of PE silicon nitride. A conventional method of creating a layer of silicon nitride applies a one-step process for the creation thereof. Film stress increases as the thickness of the created layer of PE silicon nitride increases. A new method is provided for the creation of a crack-resistant layer of PE silicon nitride by providing a multi-step process. The main processing step comprises the creation of a relatively thick, compressive film of PE silicon nitride, over the surface of this relatively thick layer of PE silicon nitride is created a relatively thin (between about 150 and 500 Angstrom) layer of tensile stress PE silicon nitride. This process can be repeated to create a layer of PE silicon nitride of increasing thickness.

Abstract: Low dielectric constant materials with improved elastic modulus and material hardness. The process of making such materials involves providing a dielectric material and ultraviolet (UV) curing the material to produce a UV cured dielectric material. UV curing yields a material with improved modulus and material hardness. The improvement is each typically greater than or about 50%. The UV cured dielectric material can optionally be post-UV treated. The post-UV treatment reduces the dielectric constant of the material while maintaining an improved elastic modulus and material hardness as compared to the UV cured dielectric material. UV cured dielectrics can additionally exhibit a lower total thermal budget for curing than for furnace curing processes.

Abstract: A method of processing a ceramic preform is disclosed having the steps of: coating with a preceramic polymer at least one fabric panel formed of silicon carbide fibers coated with a high temperature boron nitride; shaping the at least one fabric panel into a preliminary preform; curing the preceramic polymer to impart rigidity to the preform, and inserting the rigidized preform into a reactor without tooling for a chemical vapor infiltration process to form the ceramic preform.

Abstract: There is provided a laminated structure having a silicon carbide coating layer formed by sputtering on an alloy substrate, and the silicon carbide has a light transmittance of 70% or greater. It is preferable that the alloy substrate is a magnetic alloy or a phase-changing alloy, the impurity ratio on the surface of the silicon carbide coating layer is 1.0×1012 atoms/cm2 or less and the thickness of the silicon carbide coating layer is 10 to 100 nm. Since the laminated structure has a silicon carbide coating layer which is excellent in oxidation resistance, chlorine resistance, humidity resistance, and which has high refractive index, high light transmittance and the like, it is suitable for an optical disk recording medium such as a CD-RW, a DVD-RAM or the like.

Abstract: An organic silicon polymer is infiltrated and charged into gaps in a matrix phase of a formed fiber fabric, and its airtightness is increased by (a) CVI infiltration process 2 for forming the SIC matrix phase on the surface of the fiber fabric formed, (b) pressurized infiltrations process 4 for pressurizing the organic silicon polymer in the direction operating pressure is applied to the fiber fabric during use and infiltrating the organic silicon polymer into gaps in the aforementioned matrix phase, and (c) heating process 5 for heating the infiltrated fiber fabric at a high temperature. Thus, airtightness can be increased quickly, and fired work can be applied practically even to thrust chambers etc.

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.

Abstract: The present invention provides a method of depositing a carbon doped silicon oxide film having a low dielectric constant (k). A process gas mixture containing at least a carrier gas, an oxidizer, a carbon gas source, or combinations thereof, is supplied adjacent an edge of a substrate though a purge gas inlet in a substrate support to facilitate deposition of low k carbon doped silicon oxide film having a greater concentration of silicon oxide around the edge of the substrate than an inner portion of the substrate.

Abstract: A part (10) on which a continuous coating is to be formed is put into place on one or more supports provided with a separation layer (26) made of a material that is weaker than the material of the coating to be made. A continuity layer (24) of a component material of the coating to be made is interposed between the part and the or each support, at least in vicinity of the or each support zone. The coating (12) is formed by chemical vapor infiltration or deposition, and the part is then separated from the or each support by rupture within the separation layer (26), the continuity of the coating of the part in the or each support zone being provided by the portion of the coating that comes from the continuity layer (24) that remains in place on the part.

Abstract: The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber arranged in a reactor housing where the floor thereof, comprises at least one substrate holder which is rotatably driven by a gas flow flowing in a feed pipe associated with said floor. Said substrate holder is disposed in a bearing cavity on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity is associated with a tray-shaped element arranged below the outflow of the feed pipe.

Abstract: A method for making a dry plating built-up film comprises providing silicon carbide as a starting source and subjecting to dry plating while changing a concentration of a reactive gas continuously or intermittently to deposit and form, on a substrate, a thin film having different refractive indices along its thickness. A method for making a sputter built-up film is also described, which comprising providing silicon carbide as a target and subjecting to sputtering while changing making electric power against the target continuously or intermittently to deposit and form a thin film having different refractive indices along its thickness.

Abstract: A liquid crystal display device includes an alignment layer with constituent materials. The constituent materials have a stoichiometric relationship configured to provide a given pretilt angle. Liquid crystal material is provided in contact with the alignment layer. A method for forming an alignment layer for liquid crystal displays includes forming the alignment layer on a substrate by introducing an amount of material to adjust a stoichiometric ratio of constituent materials wherein the amount is determined to provide a given pretilt angle to the alignment layer. Ions are directed at the alignment layer to provide uniformity of the pretilt angle.

Abstract: A method of forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave.

Abstract: The present invention provides a method for making a superabrasive composite material having the general formula SixCyNz, and tools containing such a material. In one aspect, vapor forms of Si, C, and N elements are deposited onto a molten metal catalyst and solid SixCyNz is precipitated therefrom.

Abstract: A method of forming an article. The method comprises forming a silicon-based substrate that is oxidizable by reaction with an oxidant to form at least one gaseous product and applying an intermediate layer/coating onto the substrate, wherein the intermediate layer/coating is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant.

Abstract: A method for depositing a low k dielectric film comprising silicon, carbon, and nitrogen is provided. The low k dielectric film is formed by a gas mixture comprising a silicon source, a carbon source, and NR1R2R3, wherein R1, R2, and R3 are selected from the group consisting of alkyl and phenyl groups. The low k dielectric film may be used as a barrier layer, an etch stop, an anti-reflective coating, or a hard mask.

Abstract: A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a source of carbon, silicon, boron, and oxygen. That apparatus is then operated under conditions that cause a boron containing carbon doped oxide layer to form on the substrate.

Abstract: Methods and systems are provided for making a coated plastic container, such as for packaged beverages, possessing a gas barrier and having enhanced resistance to loss in barrier due to handling abuses expansion of walls of the container. The system comprises a vacuum cell, a coating source in the vacuum cell for supplying a coating vapor to an external surface of a plastic container positioned within the vacuum cell, and gas feeds for supplying one or more process gases into an interior space of the vacuum cell. The coating source heats and evaporates an inorganic coating material, such as metal or silicon, to form a coating vapor, which is energized to form a plasma. The process gases include a carbon-containing gas, such as acetylene.

Abstract: A magnetic recording medium is provided with a dual layer protective overcoat system comprising a SiC corrosion barrier layer and a carbon-containing protective overcoat thereon. The SiC layer effectively prevents or significantly reduces Co and Ni diffusion to the medium surface. Embodiments include magnetic recording media comprising a SiC corrosion barrier layer over a magnetic layer, an overlying protective layer of amorphous hydrogenated carbon, amorphous nitrogenated carbon or amorphous hydrogen-nitrogenated carbon, and a lubricant topcoat thereon. Embodiments of the present invention further include magnetic recording media comprising Ni—P plated aluminum, Ni-plated glass or non-conductive substrates including glass, glass-ceramic and ceramic materials. Embodiments of the present invention further include a dual protective overcoat system having a combined thickness less than about 100 Å, such as less than about 75 Å, e.g.

Abstract: A process of depositing a low k dielectric film on a substrate includes using plasma enhance chemical vapor deposition to deposit a hydrogenated oxidized silicon carbon film. The process includes flowing a precursor gas containing Si, C, H and an oxygen-providing gas into the PECVD chamber. The precursor gas and the oxygen-providing gas are substantially free from nitrogen. The oxygen-providing gas is selected from the group consisting of oxygen, carbon monoxide, carbon dioxide, ozone, water vapor and a combination of at least one of the foregoing.

Abstract: This invention relates to a corrosion-resistant member comprising a ceramic substrate and a silicon carbide film formed through a chemical vapor deposition process and having a resistivity at room temperature of 20-500 &OHgr;·cm, and a method of manufacturing the same as well as an heating apparatus using the same.

Abstract: This invention relates to a corrosion-resistant member comprising a ceramic substrate and a silicon carbide film formed through a chemical vapor deposition process and having a resistivity at room temperature of 20-500 &OHgr;·cm, and a method of manufacturing the same as well as an heating apparatus using the same.

Abstract: An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.

Abstract: A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.

Abstract: A substrate is coated with a coating system including diamond-like carbon (DLC) and at least one fluoro-alkyl silane (FAS) compound. In certain embodiments, a method of making a coated article includes providing a substrate; and forming a coating system on said substrate in a manner such that the coating system includes each of diamond-like carbon (DLC) and at least one fluoro-alkyl silane (FAS) compound.