Abstract: The present invention has an object to provide a joining method, whereby high-purity ceramic parts can be simply joined, a high strength joint durable even under a high temperature environment, is possible, and the method is applicable also to a complex shape.

Abstract: An electromagnetic fuel injector having improved wear characteristics comprises a body having a fuel inlet and a fuel outlet. A valve seat is sealably connected to the body, and a moveable valve member positioned at the fuel outlet for controlling the flow of fuel from the outlet comprises a valve outlet element that provides a sealing interface with the valve seat. The valve member and included valve outlet element further comprise wear surfaces that are subject to repeated impact and/or sliding contact; at least a portion of these wear surfaces comprise an applied layer of diamond-like carbon (DLC) stabilized by inclusion of greater than 30 weight percent of a carbide-forming material selected from the group consisting of silicon, titanium, and tungsten.

Abstract: A method for fabricating a CMC (Ceramic Matrix Composite) article, comprising: performing a CVI (Chemical Vapor Infiltration) treatment for forming a SiC matrix layer on the surface of a woven fabric; performing a machining process, after the CVI treatment, for machining the woven fabric; and performing a PIP (Polymer Impregnation and Pyrolysis) treatment, after the machining process, for impregnating an organic silicon polymer as a base material into voids in the matrix layer and pyrolyzing the organic silicon polymer. By this method, the throughput of CMC articles can be preferably increased. The throughput may be further increased by performing a slurry impregnation treatment before or after the PIP treatment, in which slurried SiC is impregnated into the voids in the matrix layer.

Abstract: An insulating layer is formed onto a surface of a semiconductor substrate by reacting a silicon-containing compound and a compound containing peroxide bonding to deposit a short-chain polymer on the surface of the semiconductor substrate. A deposition rate of the short-chain polymer is increased by farther reacting a substance which associates readily with the compound containing the peroxide bonding.

Abstract: A method of forming a silicon carbide layer, a silicon nitride layer, an organosilicate layer is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a fluorine source in the presence of an electric field. The silicon nitride layer is formed by reacting a gas mixture comprising a silicon source, a nitrogen source, and a fluorine source in the presence of an electric field. The organosilicate layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, an oxygen source and a fluorine source in the presence of an electric field. The silicon carbide layer, the silicon nitride layer and the organosilicate layer are all compatible with integrated circuit fabrication processes.

Abstract: A corrosion-resistant member includes a substrate made of a ceramic material and having a diameter of at least 200 mm, and a film of chemically vapor deposited silicon carbide having a thickness of not less than 0.5 mm and covering at least such a portion of the surface of the substrate that is to contact a corrosive material. A process is disclosed for producing such a corrosion-resistant member, which process includes thermally treating the film at a temperature higher, by not less than 50° C. centigrade, than a film-forming temperature at which the film of silicon carbide is formed, after the formation of the silicon carbide film.

Abstract: A chemical vapor deposited, p phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.

Abstract: A low dielectric constant nanotube, which can be used in the damascene process, and the fabrication method for a non-selective and a selective nanotube thin film layer are described. The non-selective deposition of the nanotube thin film layer includes forming a catalytic layer on the substrate followed by chemical vapor depositing a nanotube thin film layer on the catalytic layer. The selective deposition of the nanotube thin film layer includes forming a catalytic layer on the substrate followed by patterning the catalytic layer. A patterned photoresist layer can also form on the substrate, followed by forming multiple of catalytic layers on the photoresist layer and on the exposed substrate respectively. The photoresist layer and the overlying catalytic layer are removed. Thereafter, a nanotube layer is formed on the patterned catalytic layer by chemical vapor deposition.

Abstract: A substrate is coated with a coating system including at least one diamond-like carbon (DLC) inclusive layer. In certain embodiments, the coating system includes an anti-reflective layer, a DLC inclusive layer provided for hardness/durability purposes, a primer layer, and an FAS inclusive hydrophobic layer provided over the primer layer. The anti-reflective layer is provided in order to reduce visible light reflections off of the resulting coated article and thus to improve visible transmission of the article. In certain embodiments, the primer layer may be provided in order to enable improved adhesion between the FAS inclusive layer and the DLC inclusive layer that is provided for hardness/durability. In certain embodiments, each of the anti-reflective layer, the DLC inclusive layer, and/or the primer layer may include DLC for purposes described herein. In certain alternative embodiments, the primer and FAS layers need not be provided.

Abstract: A method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400° C. The low dielectric constant films contain residual carbon and are useful for gap fill layers, pre-metal dielectric layers, inter-metal dielectric layers, and shallow trench isolation dielectric layers in sub-micron devices. The hydroxyl compound can be prepared prior to deposition from water or an organic compound. The silicon oxide layers are preferably deposited at a substrate temperature less than about 40° C. onto a liner layer produced from the organosilicon compound to provide gap fill layers having a dielectric constant less than about 3.0.

Abstract: Within a method for forming a dielectric layer within a microelectronic fabrication there is first provided a substrate. There is then formed over the substrate a carbon doped silicon containing dielectric layer. There is then treated the carbon doped silicon containing dielectric layer with an oxidizing plasma to form from the carbon doped silicon containing dielectric layer an oxidizing plasma treated carbon doped silicon containing dielectric layer.

Abstract: There is disclosed a method of constructing photosensitive waveguides on silicon wafers through the utilization of a Plasma Enhanced Vapor Deposition (PECVD) system. The deposition is utilized to vary the refractive index of resulting structures when they have been subject to Ultra Violet (UV) post processing.

Abstract: A high quality transparent SiC thin film can be deposited on the surface of a plastic material at low temperature utilizing Electron Cyclotron Resonance (ECR) Plasma CVD techniques, thereby enhancing surfacial hardness without spoiling designability. A magnetic field is applied to a plasma generating chamber by means of a surrounding magnetic coil. Microwaves are then introduced into the plasma generating chamber. Further, an upstream gas is introduced into the plasma generating chamber. ECR plasma is thus generated. A downstream gas is then supplied to the chamber from an inlet. Furthermore, the ECR plasma is passed through a mesh placed between the inlet and a polymer base material or between the plasma generating chamber and the inlet. Accordingly, a SiC film is deposited on a surface of a polymer base material.

Abstract: A glass substrate is ion beam milled in order to smoothen the same and/or reduce or remove nano-cracks in the substrate surface before a coating system (e.g., diamond-like carbon (DLC) inclusive coating system) is deposited thereon. It has been found that such ion beam milling of the substrate prior to deposition of the coating system improves adherence of the coating system to the underlying milled substrate. Moreover, it has surprisingly been found that such ion beam milling of the substrate results in a more scratch resistant coated article when a DLC inclusive coating system is thereafter ion beam deposited on the milled substrate. Amounts sodium (Na) may also be reduced at the surface of the substrate by such milling.

Abstract: A silicon carbide film is formed in a manner which avoids the high level contents of oxygen by depositing the film in at least two consecutive in-situ steps. Each step comprises plasma enhanced chemical vapor deposition (PECVD) of silicon carbride and ammonia plasma treatment to remove oxygen contained in the deposit silicon carbide. The disclosed method is found to enhance several insulation properties of the silicon carbide film and can be easily adapted into production-level IC processing.

Abstract: A nitrogen-doped n-type SiC-formed material consisting of high purity &bgr;-type crystals, which exhibits low resistivity and low light transmittance and is suitably used as a substrate for semiconductor fabricating devices, and a method of manufacturing the SiC-formed material by which the SiC-formed material is obtained at high productivity and improved deposition rate. The SiC-formed material is produced by the CVD method introducing nitrogen gas together with raw material gases and a carrier gas to form a SiC film on a substrate, and removing the substrate. The material has a specific gravity of 3.15 or more, light transmittance of 1.1 to 0.05%, and resistivity of 3×10−3 to 10−5 &OHgr;m.

Abstract: The present invention provides a method for the formation of an organic coating on a substrate. The method includes: providing a substrate in a vacuum; providing at least one vaporized organic material comprising at least one component from at least one source, wherein the vaporized organic material is capable of condensing in a vacuum of less than about 130 Pa; providing a plasma from at least one source other than the source of the vaporized organic material; directing the vaporized organic material and the plasma toward the substrate; and causing the vaporized organic material to condense and polymerize on the substrate in the presence of the plasma to form an organic coating.

Abstract: A method for applying a light-blocking layer between a photoconducting layer and a mirror when making an optically addressable spatial light modulator (OASLM) using a chemical vapor deposition process. The light-blocking layer and the photoconducting layer are applied in a shared process step in which both the thickness and composition of the photoconducting layer to be applied to the transparent electrode, as well as the thickness and composition of the light-blocking layer to be applied to the photoconducting layer are determined by a time-related change of the variation of the gas composition during the deposition process. The structure of the OASLM can be optimally adapted to a desired purpose.

Abstract: A substrate is coated with a hydrophobic coating system including diamond-like carbon (DLC) and at least one fluoro-alkyl silane (FAS) compound. In certain embodiments, the coating system includes an FAS inclusive layer provided over at least one DLC inclusive layer in order to increase the initial contact angle of the coated article. At least the FAS inclusive layer may be heated (i.e., thermally cured) to an extent sufficient to at least one of: (a) improve the initial contact angle &thgr; of the resulting coated article, (b) render the hydrophobic nature of the resulting coated article more stable when exposed to solution(s)/material(s) such as hexane and/or isopropyl alcohol, and/or (c) improve bonding characteristics of the FAS inclusive layer within itself and/or between the FAS inclusive layer and a layer immediately beneath it.

Abstract: A method for forming carbon doped oxide layers by chemical vapor deposition using a source gas that includes: (a) an alkyl-alkoxysilane having the formula (R1)n(R2O)4−nSi where R1 and R2 are lower alkyl groups and n is an integer between 0 and 3, inclusive, with the proviso that when R1 and R2 are methyl groups, n is not equal to 2; (b) a fluorinated alkoxysilane having the formula (R3O)nSiF4−n where R3 is a lower alkyl group and n is an integer between 1 and 3, inclusive, or a combination thereof.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

Abstract: A process gas stream (2) is generated, from which SiC is deposited on a substrate (4) by means of CVD. Furthermore, a second gas stream (3) of an inert gas is generated, which substantially surrounds the process gas stream (2) in its direction of flow. This results in a higher yield of the process gases.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

Abstract: A laminated matrix composite made of a reinforcement phase and coated with several layers of a metallic, ceramic, or polymeric matrix material, the average thickness of the layers of matrix material being between 0.005 and 5 &mgr;m thick.

Abstract: A method for isothermic, isobaric chemical vapor infiltration (CVI) of refractory substances, especially of carbon (C) and silicon carbide (SiC), based on diffusion in a porous structure, whereby the pressure of the gas or partial pressure of an educt gas contained in the gas and the dwell time of the gas in the reaction zone are set at a given temperature in the reaction zone so that a deposition reaction occurs in the porous structure in the area of pressure or partial pressure of the saturation adsorption of the gaseous compounds forming the solid phase, saturation adsorption meaning that the deposition speed remains substantially constant at increased pressure of the gas or partial pressure of the educt gas. The reaction of the educt gas is limited in such a way that no more than 50% of the elements in the educt gas as it flows through the reaction zone are deposited as a solid phase in the porous structure.