Abstract: A radiative surface comprises a film comprising: a semi-interpenetrated or interpenetrated network of a first ion-conducting polymer and of a second electron- and electrochrome-conducting polymer; and an electrolyte for impregnating the network; the film comprising a first face intended to be in contact with the solar radiations, the first face being covered with a first metallic layer in order to reduce the absorptivity of the solar radiations. A method for creating the radiative surface is also provided.

Abstract: The present invention consists of an implantable structural element for in vivo delivery of bioactive active agents to a situs in a body. The implantable structural element may be configured as an implantable prosthesis, such as an endoluminal stent, cardiac valve, osteal implant or the like, which serves a dual function of being prosthetic and a carrier for a bioactive agent. Alternatively, the implantable structural element may simply be an implantable article that serves the single function of acting as a time-release carrier for the bioactive agent.

Abstract: A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent.

Abstract: The synthesis of nanostructures uses a catalyst that may be in the form of a thin film layer on a substrate. Precursor compounds are selected for low boiling point or already exist in gaseous form. Nanostructures are capable of synthesis with a masked substrate to form patterned nanostructure growth. The techniques further include forming metal nanoparticles with sizes <10 nm and with a narrow size distribution. Metallic nanoparticles have been shown to possess enhanced catalytic properties. The process may include plasma enhanced chemical vapor deposition to deposit Ni, Pt, and/or Au nanoparticles onto the surfaces of SiO2, SiC, and GaN nanowires. A nanostructure sample can be coated with metallic nanoparticles in approximately 5-7 minutes. The size of the nanoparticles can be controlled through appropriate control of temperature and pressure during the process. The coated nanowires have application as gas and aqueous sensors and hydrogen storage.

Abstract: The present invention provides: a thin film structure including an ordered alloy in which atoms are orderly arranged using an inexpensive substrate; and a method for manufacturing the thin film structure. Specifically, the thin film structure includes a substrate, a plating layer formed on the substrate and made of one selected from the group consisting of NiPMo and NiPW, and an ordered alloy disposed on the plating layer. The method for manufacturing the thin film structure includes the steps of: forming a plating layer on a substrate, the plating layer being made of one selected from the group consisting of NiPMo and NiPW; and forming an ordered alloy on the plating layer. The vacuum degree immediately before the ordered alloy is formed is 7.0×10?7 Pa or less. In the step of forming the ordered alloy, a process gas has an impurity concentration of 5 ppb or lower.

Abstract: A monoaxially oriented film including an ethylene-propylene copolymer elastomer, a non-elastomeric propylene-based random copolymer, and a low density polyethylene, which is oriented at least about 2.5 times in one direction and exhibits excellent linear directional tear properties parallel to the orientation direction, excellent heat seal performance in terms of high heat seal strengths and low seal initiation temperature, and is less than 50 ?m in thickness after orientation. This “thin” film formulation and orientation is suitable for pouch applications requiring an “easy-tear” linear tear feature and excellent hermetic seal properties.

Abstract: Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

Abstract: Disclosed is a coating for protecting a component against high temperatures and aggressive media, which coating has at least one subregion whose main constituent is chromium. The layer additionally comprises aluminum, the chromium content at least in the subregion in which chromium is the main constituent being greater than 30% by weight and the aluminum content being greater than or equal to 5% by weight. The invention further provides a process for producing such a coating, comprising chromizing the surface to be coated and subsequently alitizing the chromium-rich layer produced during chromizing.

Abstract: Disclosed is process for producing a protective layer for protecting a component against high temperatures and aggressive media. The process comprises forming a surface layer comprising aluminum and chromium on a surface of the component to be provided with the protective layer by chromizing and alitizing. The chromizing and/or the alitizing in different regions of the component surface to be protected is carried out simultaneously but differently to result in a protective layer that has different regions.

Abstract: In a nickel film forming method, an initial Ni film is formed on a substrate by a chemical vapor deposition (CVD) process by using a nickel-containing compound having a molecular structure in which a ligand containing a nitrogen-carbon bond is included and nitrogen of the ligand coordinates with nickel as a film forming source material and at least one selected from ammonia, hydrazine, and derivatives thereof as a reduction gas. Further, a main Ni film is formed on the initial Ni film by CVD by using the nickel-containing compound as the film forming source material and hydrogen gas as the reduction gas.

Abstract: An objective of the present invention is to provide a method for producing a rare earth metal-based permanent magnet having an Al film containing Mg, which exhibits an excellent salt water resistance. The present invention, which is to accomplish the objective, is a method for producing a rare earth metal-based permanent magnet having formed on the surface thereof an Al film containing Mg by a vapor deposition, characterized in that the production method comprises, in the case of cooling the magnet from a high temperature of 160° C. or higher after the completion of the vapor deposition step inside the treating chamber of a deposition apparatus, rapidly cooling down the magnet at a cooling rate of 10° C./min or higher until the temperature of the magnet reaches at least 60° C.

Abstract: A multilayer composite film includes in sequence: a) a biaxially oriented, opaque polyester base layer; b) a non-voided polyester layer on and coextensively in contact with a surface of the base layer; and c) a metal layer on a surface of the non-voided polyester layer opposite the opaque polyester base layer, or on a primer layer on a surface of the non-voided polyester layer opposite the opaque polyester base layer. The film may be prepared by vapor depositing or plasma depositing a metal layer on a surface of a non-voided polyester layer coextensively contacting a biaxially oriented, opaque polyester base layer, or on a primer layer on a surface the non-voided polyester layer.

Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

Abstract: Described are methods of depositing an oxygen deficient metal film by chemical reaction of at least one precursor having a predetermined oxygen deficiency on a substrate. An exemplary method includes, during a metal oxide deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an oxygen reactant gas comprising oxygen to form a layer containing a metal oxide on the substrate. During an oxygen deficient deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an additional reactant gas excluding oxygen to form a second layer at least one of a metal nitride and a mixed metal on the substrate during a second cycle, the second layer being oxygen deficient relative to the layer containing the metal oxide; and repeating the metal oxide deposition cycle and the oxygen deficient deposition cycle to form the oxygen deficient film having the predetermined oxygen deficiency.

Abstract: A surface with a low work function is formed from a starting material of diamond or diamond-like carbon. An oxygenation treatment is performed, so that the surface of the diamond or diamond-like carbon is oxygenated. Lithium is then deposited onto the oxygenated surface by means of a physical vapour deposition process. Excess lithium is then removed to form a lithium monolayer.

Abstract: The invention provides an in mould label for injection moulding that comprises a vacuum metallised layer of metal for creating a barrier to oxygen ingress. The invention further provides a moulded article including such an in-mould label, as well as a method of manufacture of such an article.

Abstract: A method for growing elongated nanostructures (7) only on the bottom (3) of a recessed structure (4), the method comprising: a. providing a substrate (5) comprising said recessed structure (4), said recessed structure (4) comprising: said bottom (3), and at least one sidewall (6), b. modifying the chemical nature of the surface of said at least one sidewall (6) so that said at least one sidewall (6) has a lower affinity than said bottom (3) for a catalyst film (2), c. providing said catalyst film (2) onto said bottom (3), d. thermally and/or plasma treating said film (2) so as to form said catalyst nanoparticles (1), and e. growing elongated nanostructures (7) in said recessed structure (4) using the catalyst nanoparticles (1).

Abstract: The invention relates to reactive metallic systems and to methods of producing reactive metallic systems. Such systems consist of metallic particles in the form of powders or pastes, or of metallic multilayer structures. To prevent the reaction product of the described self-propagating reactions from being a brittle material, it is suggested in the invention that the reactive metallic system be designed as a multilayer structure made up of thin layers of ruthenium and aluminium deposited sequentially one upon the other, or as a powder consisting of ruthenium and aluminium particles. The object is established according to the invention by selecting Ru/Al as the basic system. The strongest exothermic reaction and thus the greatest amount of liberated heat are to be expected from stoichiometrically constructed reactive systems. The heat of formation is highest here.

Abstract: Provided an antimicrobial substance that includes a base material layer, and a copper-tin alloy layer 5-200 nm in thickness disposed on the base material layer, the copper-tin alloy layer containing copper in an amount of more than 60 atomic percent but not more than 90 atomic percent, and containing tin in an amount of not less than 10 atomic percent but less than 40 atomic percent. The copper-tin alloy layer includes a Cu41Sn11 crystalline phase, and a Cu3Sn crystalline phase. The Q value (?/(nm·Cu atomic percent)), which is derived by dividing the sheet resistance (?) of the copper-tin alloy layer by the thickness of the copper-tin alloy layer and the copper content (Cu atomic percent), is 1.5×10?4-6.0×10?4.

Abstract: A method comprising: supplying a gas whose water concentration has been controlled to become smaller than 1 PPB, whose oxygen partial pressure has been controlled to become lower than 10?21 atm by a water/oxygen molecule discharging apparatus into the interior of a reaction chamber and carrying out a dehydration/deoxidation process in the interior of said reaction chamber so as to control water vapor partial pressure to become lower than 10?10 atm; depositing a metal film on a substrate by supplying a carrier gas or a plasma excitation gas whose water concentration has been controlled to become smaller than 1 PPB, whose oxygen partial pressure has been controlled to become lower than 10?21 atm into the interior of said reaction chamber; forming an insulating film on the wafer by oxidizing the metal film in a low-oxygen atmosphere whose oxygen partial pressure has been controlled to become lower than 10?20 atm.

Abstract: A metal customization process that provides an alloy metal product which meets predefined product specifications which are typically based on whole thickness materials. The metal customization process can be used with any commercially available substrates (e.g., aluminum bar, aluminum coil, steel bar, steel coil, and alloys thereof) but, preferably, the substrate is made of steel (e.g., carbon steel, low carbon steel or steel alloys). This process can include receiving a product specification that can include performance or composition criteria; converting the product specification to a surface specification and a core specification; then treating a substrate with a deposition composition, for example, at a temperature below an annealing temperature, thereby depositing at least one alloying element onto the substrate to form a coating composition that is carried by the substrate; and then annealing the coated substrate to provide a product that meets the product specification.

Abstract: A fitting (10) with a substrate (12) and an antibacterial coating (14) is characterized in that the coating (14) is a PVD coating which contains copper. A method for manufacturing such fitting (10) is characterized in that the coating (14) is applied by a PVD method.

Abstract: A method for controlled removal of a portion of a diffusion coating from a coated superalloy component and a method for rejuvenating a coated superalloy component are provided. The methods include providing the component having an oxide layer, an additive layer between the oxide layer and a diffusion zone, the diffusion zone being between the additive layer and a superalloy substrate of the superalloy component. The methods include selectively removing the oxide layer and a portion of the additive layer by grit blasting, wherein removing creates an exposed portion. Rejuvenating includes applying an aluminide coating to the exposed portion and heat treating at a preselected elevated temperature to form a rejuvenated protective aluminide coating on the superalloy component.

Abstract: A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non-metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.

Abstract: Provided is a metal covered polyimide composite comprising a tie-coat layer and a metal seed layer formed on a surface of a polyimide film by electroless plating or a drying method, and a copper layer or a copper alloy layer formed thereon by electroplating, wherein the copper plated layer or copper alloy plated layer comprises three layers to one layer of the copper layer or copper alloy layer, and there is a concentrated portion of impurities at the boundary of the copper layer or copper alloy layer when the copper layer or copper alloy layer is three layers to two layers, and there is no concentrated portion of impurities when the copper layer or copper alloy layer is a single layer. Additionally provided are a method of producing the composite and a method of producing an electronic circuit board.

Abstract: A dual brazing alloy element for a materially integral connection of a ceramic surface to a metallic surface includes a first layer having a Ni-based brazing alloy with a Ni content of at least 50% by weight and having at least one component configured to lower a melting point of the Ni-based brazing alloy selected from the group consisting of Si, B, Mn, Sn and Ge. A second layer includes an active brazing alloy material having a total content of 1-15% by weight of at least one active element selected from the group consisting of Ti, Hf, Zr and V.

Abstract: Disclosed are processes for depositing ruthenium containing films on substrates using an organometallic compound having the following formula: L-Ru—X??(I) wherein L is a non-aromatic cyclic unsaturated hydrocarbon ligand (L), having at least six cyclic carbon atoms, said cycle being unsubstituted or substituted, and X is either a non aromatic cyclic unsaturated hydrocarbon ligand identical or different from (L), having at least six cyclic carbon atoms said cycle being unsubstituted or substituted or a cyclic or acyclic conjugated alkadienyl hydrocarbon ligand having from five to ten carbons atoms, said hydrocarbon ligand being unsubstituted or substituted.

Abstract: Disclosed is a film forming method including the steps of: producing a monovalent carboxylic acid metal salt gas by reacting a bivalent carboxylic acid metal salt with a carboxylic acid; supplying the monovalent carboxylic acid metal salt gas on a substrate to accumulate a monovalent carboxylic acid metal salt film; and decomposing the monovalent carboxylic acid metal salt film by supplying energy to the substrate formed with the monovalent carboxylic acid metal salt film so as to form a metallic film.

Abstract: A method and a device for infiltration of a structure made of a porous material by chemical vapor deposition. According to the method, a first face of the porous material structure is exposed to a gaseous flow, and the second face is maintained at least partially free from any contact.

Abstract: Apparatus and methods for detecting evaporation conditions in an evaporator for evaporating metal onto semiconductor wafers, such as GaAs wafers, are disclosed. One such apparatus can include a crystal monitor sensor configured to detect metal vapor associated with a metal source prior to metal deposition onto a semiconductor wafer. This apparatus can also include a shutter configured to remain in a closed position when the crystal monitor sensor detects an undesired condition, so as to prevent metal deposition onto the semiconductor wafer. In some implementations, the undesired condition can be indicative of a composition of a metal source, a deposition rate of a metal source, impurities of a metal source, position of a metal source, position of an electron beam, and/or intensity of an electron beam.

Abstract: Disclosed are group IV metal-containing precursors and their use in the deposition of group IV metal-containing films {nitride, oxide and metal) at high process temperature. The use of cyclopentadienyl and imido ligands linked to the metal center secures thermal stability, allowing a large deposition temperature window, and low impurity contamination. The group IV metal (titanium, zirconium, hafnium)-containing f{umlaut over (?)}m depositions may be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD.

Abstract: A method for synthesizing carbon nanostructures is provided. A metalorganic layer is deposited on a substrate that has a deposition mask. The mask is removed, which also removes the portion of the metalorganic precursor deposited on the mask. The remaining portions of the metal organic layer are oxidized to produce a metal growth catalyst on the substrate that can be used for synthesis of carbon nanostructures.

Abstract: A method for providing copper filled features in a layer is provided. A deposition of copper is provided to fill features in the layer. Tops of the copper deposit are cleaned to remove copper or copper oxide at tops of the copper deposit. A selective copper alloy plating on the tops of the copper deposit is provided. The copper deposit and selective copper alloy plating are annealed.

Abstract: Methods for vapor depositing high temperature coatings on gas turbine components are provided, as are methods for producing pre-alloyed pucks for usage in vapor deposition processes. In one embodiment, the method includes the step of producing a pre-alloyed puck including a master alloy and a high vaporization temperature refractory metal, which has a vaporization temperature greater than each of the master alloy constituents. The pre-alloyed puck is placed over an ingot and heated to a temperature greater than the melt point of the pre-alloyed puck and less than the vaporization temperature of the high vaporization temperature refractory metal to transform the puck and a portion of the ingot into a molten pool and to produce a vapor stream containing the constituents of the master alloy and the ingot. The vapor stream is exposed to a gas turbine engine component to deposit the high temperature coating over at least one surface thereof.

Abstract: Wear parts having run-out and methods of producing the same, systems and control structures used to produce wear parts having run-out, and associated methods and software are disclosed. Some methods utilize a plasma-enhanced chemical vapor deposition process to produce a coating with a desired coating profile on a wear part.

Abstract: A method is presented for use in fabrication of metal islands on an oxide substrate. The method comprises: depositing a selected metal on the oxide substrate by evaporation of said selected metal; and annealing a film of the selected metal on said substrate at temperatures including an annealing temperature being less than 50° C. lower than a glass transition temperature, thereby forming the metal islands partially embedded in said substrate.

Abstract: A method for forming protective coatings on equipment is disclosed. The coating is formed from a single-component Fe-based alloy composition comprising at least two refractory elements selected from Cr, V, Nb, Mo and W in an amount of up to 30% each and a total concentration of up to 40%. In one embodiment, the single-component coating layer is applied by thermal spraying, followed by heat treatment for at least a portion of the refractory elements to fuse into the substrate forming a metallurgical bond. The coating has an adhesion strength of at least 7,000 psi measured according to ASTM D4541. The coating is further characterized as being impermeable to corrosive environments showing no pin holes in the ferroxyl test according to ASTM A967 Practice E.

Abstract: Systems and methods for producing crystalline materials by atomic layer deposition, allowing for high control of localized doping. Such materials may be fibers or films suitable for use in optoelectronics and lasers.

Abstract: A golf club head is manufactured so as to be at least partially composed of martensitic stainless steel and to have an exterior surface. At least one chromium layer is deposited on at least a portion of the exterior surface of the golf club head. At least one outer layer is deposited by physical vapor deposition on at least a portion of the at least one chromium layer, the outer layer including a metal and a nonmetal.

Abstract: A method can be used for the production of a coated substrate. The coating contains copper. A copper precursor and a substrate are provided. The copper precursor is a copper(I) complex which contains no fluorine. A copper-containing layer is deposited by means of atomic layer deposition (ALD) at least on partial regions of the substrate surface by using the precursor. Optionally, a reduction step is performed in which a reducing agent acts on the substrate obtained in the layer deposition step. In various embodiments, the precursor is a complex of the formula L2Cu(X?X) in which L are identical or different ?-donor-? acceptor ligands and/or identical or different ?,?-donor-? acceptor ligands and X?X is a bidentate ligand which is selected from the group consisting of ?-diketonates, ?-ketoiminates, ?-diiminates, amidinates, carboxylates and thiocarboxylates.

Abstract: The invention relates to a method for the coating of a surface of a ceramic basic body with a titanium compound, comprising the steps of (i) providing a preformed ceramic material; (ii) at least one step of surface activation of said ceramic material using a plasma for plasma-chemical surface preparation wherein the plasma comprises high-energy ions; (iii) at least one step of applying a titanium compound bonding layer to said ceramic material by plasma-supported coating wherein the plasma-supported coating is performed in pulsed and/or non-pulsed fashion; (iv) at least one step of applying a functional titanium compound layer by pulsed plasma-supported coating. The invention also relates to novel compositions as well as uses of the novel compositions.

Abstract: Depositing pure aluminum and aluminum alloy coatings onto substrates using directed vapor deposition (DVD) method is presented herein. The aluminum alloys have decreased environmental impact both due to their composition and due to the use of DVD process with no hazardous precursors or waste. Corrosion resistance of DVD deposited aluminum and aluminum alloys is effective for protection of steel substrates. The invention includes the use of the DVD technique to apply aluminum and/or aluminum alloy coatings effective for corrosion protection; the use of plasma-activated DVD to enhance the density of aluminum and aluminum alloy coatings deposited at low substrate temperatures; the use of multi-source evaporation to control composition of aluminum alloys during DVD deposition; the application of aluminum and/or aluminum alloy coatings onto NLOS substrates can be used for corrosion protection.

Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.

Abstract: This disclosure relates to a film that includes a first layer, the first layer includes a) 65.0 to 94.5 wt % of a first polymer; b) 0.5 to 10.0 wt % of a hydrocarbon resin; and c) 5.0 to 25.0 wt % of an elastomeric propylene-ethylene copolymer having an isotactic propylene triad tacticity of from 65 to 95%, a melting point by DSC equal to or less than 110° C., a heat of fusion of from 5.0 to 50.0 J/g, the elastomeric propylene-ethylene copolymer having: (1) propylene-derived units in an amount of at least 75 wt %; (2) ethylene-derived units in an amount of at least 6 wt %; and (3) optionally, 10 wt % or less of diene-derived units.

Abstract: Disclosed is a method for forming a Ge—Sb—Te film, in which a substrate is disposed within a process chamber, a gaseous Ge material, a gaseous Sb material, and a Te material are introduced into the process chamber, so that a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD. The method for forming a Ge—Sb—Te film comprises: a step (step 2) wherein the gaseous Ge material and the gaseous Sb material or alternatively a small amount of the gaseous Te material not sufficient for formed of Ge2Sb2Te5 in addition to the gaseous Ge material and the gaseous Sb material are introduced into the process chamber so that a precursor film, which does not contain Te or contains Te in an amount smaller than that in Ge2Sb2Te5, is formed on the substrate; and a step (step 3) wherein the gaseous Te material is introduced into the process chamber and the precursor film is caused to adsorb Te, so that the Te concentration in the film is adjusted.

Abstract: Provided is a surface-coated cemented carbide insert obtained by containing at least WC powder and Co powder as raw materials, including a WC-based cemented carbide obtained by forming and sintering mixed raw materials containing at least any of (a) Zr compound powder, Nb compound powder, and Ta compound powder, (b) complex compound powder of Nb and Ta, and Zr compound powder, (c) complex compound powder of Nb, Ta, and Zr, (d) complex compound powder of Nb, Zr, and Ta compound powder, and (e) complex compound powder of Ta and Zr, and Nb compound powder, as essential powder components, as a substrate, and forming a hard coating layer on the substrate by vapor deposition, in which a Co enrichment surface region is formed in a substrate surface, Co content in the Co enrichment surface region satisfies to be between 1.30 and 2.10 (mass ratio) of Co content in cemented carbide.

Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising bisamineazaallylic ligands are provided. Also provided are bisamineazaallylic ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

Abstract: The invention relates to a process for coating a substrate (S) whereby a metal alloy layer comprising at least two metallic elements is continuously deposited on the substrate (S) by means of a vacuum deposition facility (1) comprising a vapor jet coater (7) for spraying the substrate (S) with a vapor containing the metallic elements in a constant and predetermined relative content, the vapor being sprayed at a sonic velocity. The process is more particularly intended for depositing Zn—Mg coatings. The invention also relates to a vacuum deposition facility (1) for continuously depositing coatings formed from metal alloys, for implementing the process.

Abstract: A coated article is provided. The coated article comprises a transparent substrate, a base paint layer directly formed on a surface of the transparent substrate, an aluminum layer directly formed on the aluminum layer, and a top paint layer directly formed on the aluminum layer. The base paint layer is made of a paint containing color paste. The top paint layer is made of a transparent paint. A method for making the coated article is also described.