Abstract: The invention is directed to CVD methods and systems that can be utilized to form nanostructures. Exceptionally high product yields can be attained. In addition, the products can be formed with predetermined particle sizes and morphologies and within a very narrow particle size distribution. The systems of the invention include a CVD reactor designed to support the establishment of a convective flow field within the reactor at the expected carrier gas flow rates. In particular, the convective flow field within the reactor can include one or more flow vortices. The disclosed invention can be particularly beneficial for forming improved thermoelectric materials with high values for the figure of merit (ZT).

Abstract: The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

Abstract: A combustion turbine component (10) includes a combustion turbine component substrate (16) and an alloy coating (14) on the combustion turbine component substrate. The alloy coating (14) includes iron (Fe), chromium (Cr), aluminum (Al), at least one of titanium (Ti) and molybdenum (Mo), at least one rare earth element, and an oxide of the at least one rare earth element.

Abstract: The present invention provides a method for making a polymer dielectric composition incorporating diamondoids or diamond-like hydrocarbon units. The method includes forming a polymer solution from the cardo-diol 9,9-bis(4-hydroxyphenyl)fluorene and a diacid chloride, casting a freestanding thin polyester film from the polymer solution, and metallizing the polyester film with an evaporated Al layer to form the dielectric composition. The diacid chloride may be derived from trans-1,4-cyclohexanedicarboxylic acid; 1,3-adamantanedicarboxylic acid; or 4,9-diamantanedicarboxylic acid.

Abstract: Method includes providing a superalloy substrate such as a turbine disk, a turbine seal, a turbine blade, a turbine nozzle, a turbine shroud, or a turbine frame or case having an under platform or non-gas path region; and providing a predominantly gamma-prime nickel aluminide intermetallic ductile corrosion and oxidation resistant coating disposed on at least a portion of the substrate. The coating comprises from about 15 to about 30 atomic % aluminum, up to about 20 atomic % chromium, optionally, up to about 30 atomic % of at least one platinum group metal, optionally, up to about 4 atomic % of at least one reactive element, and optionally, up to about 15 atomic % of at least one strengthening element, and a balance being essentially nickel or nickel and at least one of cobalt, iron, or cobalt and iron. A coating precursor composition may be applied to the substrate before or after optional plating with one or more platinum group metals.

Abstract: A biaxially oriented multilayer film comprising a skin layer of polyhydroxyalkanoate, a core layer of polylactic acid polymer and a sealant layer with a metal deposited upon one surface of the skin layer of polyhydroxyalkanoate polymer. This metallized, polyhydroxyalkanoate-coextruded polylactic acid film exhibits improved moisture barrier property versus a metallized, non-polyhydroxyalkanoate-coextruded polylactic acid film.

Abstract: Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that are at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.

Abstract: A bismuth single crystalline nanowire is fabricated by vaporizing bismuth powder on a substrate without using a template having nanopores. Instead a simple and reproducible vapor-phase transport process is used. The fabricated bismuth nanowires have high purity and quality with perfect single crystallinity, and can have uniform size and are not coagulated on a single crystalline substrate.

Abstract: The present disclosure concerns a means to use light manipulation in engineered or structured coatings for thermal or photothermal effects and/or refractive and reflective index management. Such metallic, nonmetallic, organic or inorganic metamaterials or nanostructures could be used to manipulate light or energy for thermal or photothermal effects and/or refractive and reflective index management on or in any material or substrate on or in any material or substrate. The light scattering properties of metallic particles and film can be used to tune such coatings, structures or films over a broad spectrum.

Abstract: The present invention relates to a security element (20) for security papers, value documents and the like, having a feature region (24) that selectively influences incident electromagnetic radiation (30). According to the present invention, it is provided that the feature region (24) includes metallic nanopatterns (28) in which volume or surface plasmons are excited and/or resonance effects are caused by the incident electromagnetic radiation (30).

Abstract: The present invention provides a metallic coating having a sheen and discontinuous structure and a resin product having the metallic coating by using a physical vapor deposition method at high productivity and low cost.

Abstract: The present invention provides a method for applying a tribological coating to a carbon composite substrate. The method includes providing the carbon composite substrate, depositing a layer of carbon on the substrate, applying a layer of aluminum on the layer of carbon, annealing the substrate at a temperature greater than a melting temperature of aluminum, and applying a layer of silver. A layer of mixed aluminum and silver may be substituted for the layer of silver.

Abstract: Metal-clad polymer articles containing structural fine-grained and/or amorphous metallic coatings/layers optionally containing solid particulates dispersed therein, are disclosed. The fine-grained and/or amorphous metallic coatings are particularly suited for strong and lightweight articles, precision molds, sporting goods, automotive parts and components exposed to thermal cycling although the CLTE of the metallic layer and the one of the substrate is mismatched. The interface between the metallic layer and the polymer is suitably pretreated to withstand thermal cycling without failure.

Abstract: Metal-clad polymer articles containing structural fine-grained and/or amorphous metallic coatings/layers optionally containing solid particulates dispersed therein, are disclosed. The fine-grained and/or amorphous metallic coatings are particularly suited for strong and lightweight articles, precision molds, sporting goods, automotive parts and components exposed to thermal cycling although the coefficient of linear thermal expansion (CLTE) of the metallic layer and the substrate are mismatched. The interface between the metallic layer and the polymer is suitably pretreated to withstand thermal cycling without failure.

Abstract: A metallic coating for protecting a substrate from high temperature oxidation and hot corrosion environments comprising about 2.5 to about 13.5 wt. % cobalt, about 12 to about 27 wt. % chromium, about 5 to about 7 wt. % aluminum, about 0.0 to about 1.0 wt. % yttrium, about 0.0 to about 1.0 wt. % hafnium, about 1.0 to about 3.0 wt. % silicon, about 0.0 to about 4.5 wt. % tantalum, about 0.0 to about 6.5 wt. % tungsten, about 0.0 to about 2.0 wt. % rhenium, about 0.0 to about 1.0 wt. % molybdenum and the balance nickel.

Abstract: A Pt—Al—Hf/Zr aluminide coating that can be used as a bond coat for TBC and improve TBC spallation life in service at elevated temperatures is provided. The aluminide coating can include a metastable ternary or higher X—Pt/Pd—Ni phase where the phase and other elements in the alloy system are present in a NiAl ? phase of the coating. The metastable phase can be present and observable in the as-deposited condition of the bond coating; e.g. in an as-CVD deposited condition of the bond coating.

Abstract: A method of forming a metal coating on surfaces of internal passages of a turbine blade includes, in an exemplary embodiment, the steps of positioning the turbine blade in a CVD chamber, coupling a reagent gas manifold to at least one internal passage inlet, and coating the surfaces of the at least one internal passage by a CVD process using metal coating reagent gases to form a metal coating on the surfaces of the at least one internal passage.

Abstract: A near-field light generating device includes: a waveguide having a groove that opens in the top surface; a clad layer disposed on the top surface of the waveguide and having an opening that is contiguous to the groove; a near-field light generating element accommodated in the opening; and a buffer layer interposed between the near-field light generating element and each of the waveguide and the clad layer in the groove and the opening. The near-field light generating element includes: first and second side surfaces that decrease in distance from each other toward the groove; an edge part that connects the first and second side surfaces to each other and is opposed to the groove with the buffer layer therebetween; and a near-field light generating part that lies at one end of the edge part and generates near-field light.

Abstract: The invention concerns a process for the production of a region-wise metallization on a carrier substrate, wherein the carrier substrate is at least region-wise provided with a soluble colored first layer which on its side remote from the carrier substrate is provided over its full area with a metal layer, as well as a transfer film with a region-wise metalization and the use thereof.

Abstract: A method of making a heat treated (HT) coated article to be used in shower door applications, window applications, or any other suitable applications where transparent coated articles are desired. For example, certain embodiments of this invention relate to a method of making a coated article including a step of heat treating a glass substrate coated with at least a layer of or including diamond-like carbon (DLC) and an overlying protective film thereon. In certain example embodiments, the protective film may be of or include an oxide of zinc. Following and/or during heat treatment (e.g., thermal tempering, or the like) the protective film may be removed. Other embodiments of this invention relate to the pre-HT coated article, or the post-HT coated article.

Abstract: Aimed at suppressing roughening in a circumferential portion of a layer to be etched in the process of removing a hard mask formed thereon, an etching apparatus of the present invention has a process chamber, an electrode, a stage, and a shadow ring, wherein the process chamber allows an etching gas to be introduced therein; the electrode is disposed in the process chamber, and is used for generating plasma by ionizing the etching gas; the stage is disposed in the process chamber, onto which a substrate is disposed; the shadow ring has an irregular pattern on the inner circumferential edge thereof, and is disposed in the process chamber and placed above the stage 30, so as to cover a circumferential portion and an inner region adjacent thereto of the substrate in a non-contact manner.

Abstract: A method of forming a refractory metal film doped with III or V group elements. The first process gas is supplied from a first gas source through a first gas introducing member to and through a gas supply mechanism toward a substrate within a processing vessel. The second process gas is supplied from a second gas source through a second gas introducing member to and through the gas supply mechanism toward the substrate within the processing vessel. The processing vessel is purged by evacuating the processing vessel by an evacuating mechanism, while supplying the inert gas from a third source through a third gas introducing member to and through the gas supply mechanism into the processing vessel.

Abstract: A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

Abstract: A method for coating a metal substrate, such as a steel strip, is disclosed. The method comprises vapour or electro-depositing an alloy control material, as described herein, onto the substrate and passing the substrate through a bath of molten coating material and forming a coating of the coating material onto the deposited alloy control material.

Abstract: A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases).

Abstract: Ruthenium containing precursors for ruthenium containing films deposition comprising a ruthenium precursor selected from the group essentially consisting of Ru(XOp)(XCp), Ru(XOp)2, Ru(allyl)3, RuX(allyl)2, RuX2(allyl)2, Ru(CO)x(amidinate)y, Ru(diketonate)2X2Ru(diketonate)2(amidinate)2, their derivatives, and any mixture thereof.

Abstract: In a continuous in-vacuum process for the manufacture of a film metallized with aluminum, the aluminum layer is exposed to a passivating agent, inline, immediately after deposition and prior to rewinding of the film onto a take-up roller. Passivation is carried out by plasma treatment in an oxidizing atmosphere (oxygen, nitrogen or others). The resulting product exhibits no peel-off problems during unwinding of the take-up roller and greatly improved corrosion resistance.

Abstract: A method for manufacturing a substrate of an analytical sensor and the substrate thus prepared are disclosed.

Abstract: A method for manufacturing a carbon nanotube field emission cathode includes the steps of: providing a substrate (110) with a metallic layer (130) thereon; defining holes (131) in the metallic layer; oxidizing the metallic layer to form a metallic oxide layer (132) thereon; removing portions of the metallic oxide layer in the holes so as to expose corresponding portions of the metallic layer; forming a metal-salt catalyst layer (580) on the exposed portions of the metallic layer in the holes; and growing carbon nanotubes (690) on the substrate in the holes.

Abstract: A film forming apparatus 100 is provided with a processing chamber 2 for accommodating a wafer W; a gas supply section 10 for supplying inside the processing chamber 2 with a gas containing a Cu material gas and an Mn material gas; a shower head 4 for introducing the gas fed from the gas supply section 10 into the processing chamber 2; and a vacuum pump 8 for exhausting inside the processing chamber 2. The gas supply section 10 is provided with a Cu material storing section 21; an Mn material storing section 22; a manifold 40 to which the Cu material and the Mn material are introduced to be mixed; one vaporizer 42 for vaporizing the mixture formed at the manifold 40; and material gas supply piping 54 for introducing into the shower head 4 the material gas formed by vaporization.

Abstract: A method is provided for depositing thin films in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited.

Abstract: A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging a reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas containing N and H and then purging the reaction space; (vi) repeating steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer.

Abstract: A coating method deposits a metal coating of particles from the gas phase on a flat, metal substrate retained by a substrate holder at a reduced pressure, and the particles are evaporated using at least one energy source from containers constituting at least one evaporation source. The metal coating is built up of several sequentially applied individual coatings.

Abstract: A process for the presentation of a uniform coating of a metal cluster species on a substrate is described, the process comprises the steps of: depositing an amorphous primer coating on the substrate; providing a source of metal ions for binding to the amorphous coating; and, generating metal clusters on the primer coating by applying reducing conditions thereto.

Abstract: A nanostructure includes a plurality of metal nanoblades positioned with one edge on a substrate. Each of the plurality of metal nanoblades has a large surface area to mass ratio and a width smaller than a length. A method of storing hydrogen includes coating a plurality of magnesium nanoblades with a hydrogen storage catalyst and storing hydrogen by chemically forming magnesium hydride with the plurality of magnesium nanoblades.

Abstract: A high-k silicate atomic layer deposition method is disclosed. To produce a hafnium silicate layer, a substrate may be exposed to a pulse of a hafnium precursor, a pulse of an oxidizer, a pulse of a silicon precursor, and a pulse of another oxidizer. A catalyst may additionally be co-flowed with one or more reactants into the chamber through a separate inlet. Alternatively, the catalyst may be flowed to the chamber before the reactant is introduced in a soaking procedure. By either co-flowing the catalyst through separate inlets or by performing a catalyst soak, hafnium silicate formation may proceed at a fast rate and/or at a low temperature.

Abstract: A plastic cutlery item molded from a plastic material, such as polystyrene, having a metallic coating that imparts to this cutlery item the appearance of metal cutlery or silverware. In one embodiment the plastic cutlery or tableware items are molded using injection molding techniques, and subjected to a vacuum metallizing process in an individualized non-contiguous manner, where a thin metallic layer is deposited on at least one of their surfaces. The resultant items simulate the appearance of metal cutlery or tableware. In one embodiment of the invention the plastic cutlery or tableware articles are molded from a clear polystyrene resin and are coated with a thin stainless steel layer through vacuum sputtering deposition on only one of the sides. The abrasion resistance of the metallic coating can be enhanced by subjecting the articles to a post-metallizing holding period or by applying a clear protective overcoat.

Abstract: A metallic effect pigment comprising at least three layers: A) a layer A which comprises at least one metal MA and has an average oxygen content OA, based on the total amount of MA and OA in the layer A, B) a layer B comprising at least one metal MB and having an average oxygen content OB of 0 to 77 atom %, more particularly of 0 to 58 atom %, based on the total amount of MB and OB in the layer B, C) a layer C which comprises at least one metal MC and has an average oxygen content OC, based on the total amount of MC and OC in the layer C, the average oxygen content OAC in layers A and C being determined in accordance with the formula (I) O AC = 1 2 ? ( O A M A + O A + O C M C + O C ) ( I ) and being situated within a range from 2 to 77 atom %, more particularly from 25 to 58 atom %. The disclosure further relates to processes for preparing this effect pigment and also to its use.

Abstract: A method and a device for infiltration of a structure made of a porous material by chemical vapor deposition. According to the method, a first face of the porous material structure is exposed to a gaseous flow, and the second face is maintained at least partially free from any contact.

Abstract: Provided are novel 1,3-diimine copper complexes, and processes for using 1,3-diimine copper complexes in the deposition of copper on substrates, or in or on porous solids, by atomic layer deposition.

Abstract: The invention provides a method of manufacturing or repairing a coating on a metallic substrate. Production of said coating comprises forming a pre-layer on the substrate or on a sub-layer of the coating placed on the substrate by applying one or more layers of a paint containing at least one metal selected from the group constituted by platinum class metals (platinoids) and chromium. Application to the formation or localized repair of a thermal barrier on a superalloy turbo engine part.

Abstract: Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Abstract: There are provided a nickel oxide film for a bolometer and a manufacturing method thereof, and an infrared detector using the nickel oxide film. The nickel oxide film has properties with a TCR value greater than ?3%/° C., a low noise value, and stable and high reproducibility properties. The nickel oxide film is applicable to manufacturing an infrared detector using a nickel oxide film for a bolometer.

Abstract: The direct vapor depositing resin composition of the present invention comprises at least one selected from the group consisting of (A-I): a graft copolymer obtained by graft-polymerizing one or more monomers or a monomer mixture to a complex rubber-like polymer (G) composed of a polyorganosiloxane and a (meth)acrylate-based polymer and (A-II): a graft copolymer obtained by graft-polymerizing one or more monomers or a monomer mixture including an alkyl (meth)acrylate as an essential component to a rubber-like polymer (R) in which the content of diene units is 30% by weight or less in 100% by weight of the whole rubber-like polymer. The direct vapor depositing resin composition of the present invention can provide a beautiful bright appearance after direct vapor deposition of a metal, further, has high level mechanical strengths such as impact strength and the like, and weather resistance, and is also excellent in hot plate welding property with a transparent resin such as PMMA resins, PC resins and the like.

Abstract: The invention discloses a metal pattern formation method including the following steps. At first, an organic liquid is printed on a substrate to form a base pattern. Afterward, a metal is evaporated to generate several metal particles for covering the printed substrate. At last, the substrate is heated to vaporize the base pattern, and the metal particles adhered to the substrate forms a metal pattern complementary to the base pattern.

Abstract: The invention relates to the production and use of novel bioactive devices and metallic coatings for example for sterilizing, disinfecting, and decontaminating water or aqueous solutions. The known oligodynamic effect of silver for reducing the amount of germs is thereby improved and increased by combining silver with ruthenium and a vitamin or derivative thereof. The novel properties of these bioactive metal surfaces lead to faster and more efficient killing of microorganisms. Simultaneously, these novel bioactive metal surfaces prevent infestation by microorganisms and attachment or permanent deposition of problematic biomolecules such as for example DNA, RNA, or proteins. A self-cleaning surface is thus obtained, which very quickly and efficiently and over extended periods of time sterilizes water and aqueous solutions when they come in contact with said surface.

Abstract: Method for preparing a substrate comprising a solid support and a plurality of layers on the support; at least one layer consisting of a uniform, homogeneous, and continuous film of particles of one or more metal oxide(s), or of uniformly, homogeneously, dispersed particles of one or more metal oxide(s), on the support or on an underlying layer; at least one layer consisting of a continuous or discontinuous film of one or more metal(s) or of one or more metal alloy(s), or of dispersed nanoparticles of one or more metal(s) or of one or more metal alloy(s), on the support or on an underlying layer; the method comprising the following steps: a)—impregnating the heated solid support or an already deposited underlying layer with a solution of precursors of the metal oxide or oxides in a supercritical fluid, and depositing a uniform, homogeneous, and continuous film of particles of one or more metal oxide(s), or of uniformly, homogeneously, dispersed particles of one or more metal oxide(s), on the support or on the

Abstract: A bonded assembly includes a member, and a substrate comprising beryllium, the substrate configured to be bonded to the member. The bonded assembly includes a first barrier applied to a surface of the substrate, a second barrier applied to a surface of the first barrier, a bonding material disposed between the second barrier and the member, and wherein the second barrier is configured to prevent dissolution of the first barrier into the bonding material.

Abstract: The present invention provides a material for transparent conductive film. The material for transparent conductive film comprises a mixed metal oxide containing Zn, Sn and O, and at least one selected from the group consisting of group V to X elements of the periodic table as a dopant element.

Abstract: The present invention relates generally to a metallic alloy composed of Titanium and Tungsten that together form an alloy having a Coefficient of Thermal Expansion (CTE), wherein the content of the respective constituents can be adjusted so that the alloy material can be nearly perfectly matched to that of a commonly used semiconductor and ceramic materials. Moreover, alloys of Titanium-Tungsten have excellent electrical and thermal conductivities making them ideal material choices for many electrical, photonic, thermoelectric, MMIC, NEMS, nanotechnology, power electronics, MEMS, and packaging applications. The present invention describes a method for designing the TiW alloy so as to nearly perfectly match the coefficient of thermal expansion of a large number of different types of commonly used semiconductor and ceramic materials.