Abstract: A method for adjusting the size of cooling holes of a gas turbine component is disclosed in which the component is shielded with an easily removable and non- conductive shielding material without shielding the cooling holes themselves. The cooling holes are then coated by a galvanic process and the size of the cooling holes is restored to within manufacturing tolerances. The shielding material is removed and, subsequently, a heat treatment for securing a bonding of the metallic coating is applied.

Abstract: A gas turbine airfoil has an external surface and an internal passage therethrough. The internal passage is selectively coated by providing a source of a flowable precursor coating material in contact with the internal passage of the airfoil, and providing a coating prevention structure overlying at least a portion of the external surface. The flowable precursor coating material is flowed from the source of the flowable precursor coating material and through the internal passage of the airfoil. The coating prevention structure prevents contact of the flowable precursor coating material with the external surface of the airfoil.

Abstract: A method for treating a portion of a metal component by diffusion alloying includes providing a container having at least one open end. The container has a width that is greater than the width of the portion of the metal component to be treated, a thickness that is greater than the thickness of the portion of the metal component to be treated, and a depth that is greater than the length of the portion of the metal component to be treated. According to the method, the portion of the metal component to be treated is placed in the container. A heat-activated alloying powder is placed in the container around the portion of the component to be treated in a layer that extends along the length of the portion of the component to be treated. A non-oxidizing powder is placed in the container adjacent to the alloying powder and around the metal component in a layer that extends to an open end of the container.

Abstract: A method of depositing by chemical vapor deposition a modified platinum aluminide diffusion coating onto a superalloy substrate comprising the steps of applying a layer of a platinum group metal to the superalloy substrate; passing an externally generated aluminum halide gas through an internal gas generator which is integral with a retort, the internal gas generator generating a modified halide gas; and co-depositing aluminum and modifier onto the superalloy substrate. In one form, the modified halide gas is hafnium chloride and the modifier is hafnium with the modified platinum aluminum bond coat comprising a single phase additive layer of platinum aluminide with at least about 0.5 percent hafnium by weight percent and about 1 to about 15 weight percent of hafnium in the boundary between a diffusion layer and the additive layer. The bond coat produced by this method is also claimed.

Abstract: A method of forming an aluminum silicon diffusion coating on a surface of an alloy product utilizes a diffusion mixture containing by weight 1% to 5% aluminum, 0.5% to 5% silicon, 0.5% to 3% ammonium halide activator and the balance an inert filler. The product to be coated is placed in a retort with the diffusion mixture covering the product surfaces to be coated. Upon heating aluminum and silicon will diffuse onto the product surfaces forming the aluminum and silicon diffusion coating.

Abstract: Method for forming on a superalloy or other metallic substrate a platinum graded, outward single phase diffusion aluminide coating on a surface of the substrate by depositing a layer comprising Pt on the substrate and then gas phase aluminizing the substrate in a coating chamber having a solid source of aluminum (e.g. aluminum alloy particulates) disposed therein close enough to the surface of the substrate to form at an elevated substrate coating temperature a diffusion aluminide coating having an inner diffusion zone and outer additive single (Ni,Pt)Al phase layer having a concentration of platinum that is relatively higher at an outermost coating region than at an innermost coating region adjacent the diffusion zone.

Abstract: Compositions useful for chemical vapor delivery (CVD) formation of copper layers in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head or for circuitization of packaging components. The copper precursor formulation may include one or more copper precursors, e.g., a precursor of the formula hfac(Cu)L where L is a low-cost ligand such as an alkene and/or alkyne such as [(hfac)Cu]2 (DMDVS). The formulation may include in addition to the copper precursor(s) one or more low-cost ligand species such as alkenes, alkynes, dienes and combinations thereof, to increase thermal stability of the formulation and provide enhanced vaporization properties for CVD.

Abstract: In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

Abstract: Chain parts and other steel articles are provided with hard, wear-resistant carbide coatings by tumbling them in a heated retort with a particulate mix which includes a source of vanadium and/or niobium. The steel substrate comprises a steel having at least 0.2% carbon, preferably 0.7-1.2%. Where the chromium content of the steel is 4-12%, preferably 4-8%, the chemical deposition process includes drawing a small amount of chromium from the steel substrate into the vanadium or niobium carbide coating, where it is distributed substantially homogeneously, helping to provide adhesion strength to the coating.

Abstract: The present invention discloses a CVD (Chemical Vapor Deposition) process where nickel or alloys thereof, such as, Ni/Cu, Ni/Co, are deposited on metal surfaces which are capable of receiving nickel or alloys thereof, using an Iodide source, preferably an Iodide salt, such as, Ammonium Iodide or Copper Iodide, with at least one inert stand-off in contact with the receiving metal surface. This invention basically allows the CVD of nickel (Ni) on molybdenum (Mo) or tungsten (W) where the nickel source is physically isolated from the refractory metal surface to be plated using at least one inert material that is in floating contact with the refractory metal surface that needs to be coated with at least one layer of nickel or alloy thereof.

Abstract: The present invention provides for an etch and mar resistant low VOC clear coating composition most suitable for use as a top clear coat in multi-layered OEM or refinish automotive coatings. The coating composition includes isocyanate, carbonate and melamine components. The isocyanate component includes an aliphatic polyisocyanate. The composition may be formulated as a two-pack or one-pack coating composition, wherein the isocyanate functionalities are blocked with a blocker such as a mono-alcohol.

Abstract: A thermal barrier coating system and a method for forming the coating system on an article designed for use in a hostile thermal environment. The method is particularly directed to a coating system that includes a plasma-sprayed MCrAlY bond coat on which a thermal-insulating APS ceramic layer is deposited, in which the oxidation resistance of the bond coat and the spallation resistance of the ceramic layer are substantially increased by vapor phase aluminizing the bond coat. The bond coat is deposited to have a surface area ratio of at least 1.4 and a surface roughness of at least 300 &mgr;inch Ra in order to promote the adhesion of the ceramic layer. The bond coat is then overcoat aluminized using a vapor phase process that does not alter the surface area ratio of the bond coat. This process is carried out at relatively low temperatures that promote inward diffusion of aluminum relative to outward diffusion of the bond coat constituents, particularly nickel and other refractory elements.

Abstract: A method for reducing catalyst contamination in a hydrocarbon conversion reactor system, comprising the steps of contacting at least a portion of a metal-coated hydrocarbon conversion reactor system comprising a reactive metal with a getter to produce a movable metal; and fixating the movable metal.

Abstract: This invention relates to a method for tungsten chemical vapor deposition on a semiconductor substrate, comprising positioning said substrate within a deposition chamber, heating said substrate and depositing under low pressure the tungsten on the substrate by contacting the latter with a mixture of gases flowing through the deposition chamber comprising tungsten hexafluoride (WF6), hydrogen (H2) and at least one carrier gas. The mixture of gases comprises also silane (SiH4) with such a flow rate that the flow ratio WF6/SiH4 is from 2.5 to 6, the flow rate of WF6 being from 30 to 60 sccm, while the pressure in the deposition chamber is maintained from 0.13 to 5.33 kPa (1 and 40 Torr).

Abstract: A method for forming a titanium film and a titanium nitride film on a surface of a substrate by lamination, by which contamination of the substrate due to the by-product is suppressed and the contact resistance of the titanium film is reduced. The method comprises the steps of forming a titanium film on the surface of the substrate using a first process gas containing TiCl4 and a reducing gas, subjecting the substrate to a plasma process using a second process gas containing N2 gas and a reducing gas, thereby decreasing Cl in the titanium film and nitriding the surface of the titanium film to form a nitride layer, and forming a barrier metal (e.g., a titanium nitride film) on the titanium film having the nitride layer. Thus, the titanium film and the titanium nitride film are formed on the substrate by lamination. The second process gas contains N2 gas in a ratio of 0.5 or lower with respect to the reducing gas.

Abstract: A metallic substrate has a substrate surface having a substrate surface of nickel, a substrate aluminum content, and other alloying elements. A maskant is applied overlying the substrate surface to produce a masked substrate surface having an exposed region and a protected region. The maskant includes a plurality of maskant particles, each particle having a maskant particle composition comprising a maskant metal selected from the group of nickel, cobalt, titanium, chromium, iron, and combinations thereof, and a maskant aluminum content. The substrate is aluminided by contacting a source of aluminum to the masked substrate surface, whereby aluminum deposits on the exposed region and does not deposit on the protected region.

Abstract: A silicon article including a silicon base and columns extending from the silicon base. The columns define a gap between the columns which is devoid of material so that the article can act as a filter or heat sink. Also disclosed is a method of making the silicon article.

Abstract: A method for applying, in a non-oxidizing atmosphere, a diffusion aluminide coating to a metallic surface of an article combines use of a relatively low aluminide coating temperature in the range of about 1650-1800° F. with a relatively high Al activity Al source material including Al of at least about 40 weight %. Such combination results in an as-deposited aluminide coating comprising a diffusion portion bonded between a metallic substrate and a coating outer portion of a thickness of no greater than about 60% of the thickness of the coating outer portion, typically less than about 1 mil.

Abstract: A method for chemical vapor deposition comprises providing a quantity of nitrogen at the interface between a transition metal-based material and an underlying dielectric-covered substrate. The nitrogen can be provided by heating the substrate in an atmosphere of a nitrogen-containing process gas or by exposing the surface of the dielectric-covered substrate to a plasma generated from a nitrogen-containing process gas. In certain embodiments, the nitrogen on the surface of the dielectric is bound with atoms of a transition metal to form a thin layer of a transition metal nitride. The method promotes the adhesion of the transition metal-based layer to the dielectric by nullifying the effect of halogen atoms that are also incorporated at the transition metal/dielectric interface.

Abstract: The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.

Abstract: A method for forming a metal layer located over a metal underlayer of a semiconductor device, using a metal halogen gas. The method involves supplying a predetermined reaction gas into a reaction chamber for a predetermined period of time prior to deposition of the metal layer. The reaction gas has a higher reactivity with an active halogen element of a metal halogen gas supplied to form the metal layer, compared to a metal element of the metal halogen gas. As the metal halogen gas is supplied into the reaction chamber, the reaction gas reacts with the halogen radicals of the metal halogen gas, so that the metal underlayer is protected from being contaminated by impurities containing the halogen radicals.

Abstract: A Ti film is formed by chemical vapor deposition in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method comprising the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at a temperature of from 550 to 700° C. during the deposition of the Ti film, and the flow rates of the processing gases are regulated so that Si-to-insulator selectivity is not less than one. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

Abstract: An in-situ method for synthesis of a vapor type of copper or other metal precursor from a solid source of metal in an oxidation state of 1 or greater The solid source is localized above the wafer and its temperature is controlled independently from the wafer temperature. The solid source may be located, for example, in a showerhead. A metal precursor vapor is produced, and this vapor is drawn onto the wafer, allowing deposition to occur on the wafer and a solid thin metal film to form on the wafer. The invention overcomes the problem of low partial pressure of copper precursors in copper CVD.

Abstract: A diffusion aluminide coating having a graded structure is applied over a nickel base superalloy substrate. The coating has an inner region of a diffusion aluminide adjacent to the substrate rich in a reactive element, typically Hf, Si or combinations of the two. The near surface region is a diffusion aluminide which is substantially free of reactive elements. Such coatings when used as bond coats in thermal barrier coating systems exhibit improved spallation performance.

Abstract: A turbine blade is coated by first applying a particle-entrapped tip coating to the tip of the airfoil. An aluminum-containing coating is thereafter applied to the airfoil, including to the tip of the airfoil overlying the particle-entrapped tip coating. The aluminum-containing coating is applied by providing a source of aluminum contacting the airfoil that deposits aluminum onto the airfoil at a coating temperature, and heating the airfoil to the coating temperature so that the aluminum-containing coating is deposited onto the airfoil, and so that the aluminum-containing coating and the particle-entrapped tip coating are diffused into the turbine blade substrate. The step of applying the aluminum-containing coating occurs without substantial prior interdiffusing of the particle-entrapped tip coating with the tip of the airfoil as a separate step.

Abstract: A method of conditioning a deposition chamber. The method comprises performing a pre-coat step and a plasma treatment step. The pre-coat step deposits a material layer upon interior surfaces of the chamber and its interior components, while the plasma treatment step further reduces the amount of undesirable residual gases.

Abstract: A method of removing reactive metal from a metal-coated reactor system, comprising contacting at least a portion of a metal-coated reactor system containing reactive metal with a getter to produce movable metal, and fixating the movable metal, the getter, or both. The contacting is preferably done prior to catalyst loading. A preferred coating metal comprises tin and a preferred getter comprises HCl. The invention is also a method for reducing catalyst contamination from a metal which was used to coat a reactor system. The method comprises contacting a metal-coated reactor system, with a gaseous halogen-containing compound to produce movable metal; thereafter or simultaneously, at least a portion of the movable metal is removed from the reactor system. Then a halided catalyst is loaded into the reactor system.

Abstract: The invention concerns (1) thermochemically treating by pack-cementation a carbon-containing material, which may have an open porosity, to generate a refractory carbide coating on its surface and, if the material is porous, within the material; and (2) the use of specific alloys as a pack for thermochemically treating carbon-containing materials, optionally with an open porosity, in a halogenated atmosphere. Pack-cementation is carried out under reduced pressure using an element E (to be transported and to be reacted with the carbon in the material to generate the expected carbide) alloyed to an element M, and using a halide (chloride or fluoride, preferably a fluoride) of the same element M, of low volatility, present in the solid form.

Abstract: A plasma enhanced chemical vapor deposition (PECVD) method for depositing high quality conformal tantalum (Ta) films from inorganic tantalum pentahalide (TaX5) precursors is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5) and tantalum pentabromide (TaBr5). A TaX5 vapor is delivered into a heated chamber. The vapor is combined with a process gas to deposit a Ta film on a substrate that is heated to 300° C.-500° C. The deposited Ta film is useful for integrated circuits containing copper films, especially in small high aspect ratio features. The high conformality of these films is superior to films deposited by PVD.

Abstract: A chemical vapor deposition (CVD) method for depositing high quality conformal tantalum/tantalum nitride (Ta/TaNx) bilayer films from inorganic tantalum pentahalide (TaX5) precursors and nitrogen is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5) and tantalum pentabromide (TaBr5). A TaX5 vapor is delivered into a heated reaction chamber. The vapor is combined with a process gas to deposit a Ta film and a process gas containing nitrogen to deposit a TaNx film on a substrate that is heated to 300° C.-500° C. The deposited Ta/TaNx bilayer film is useful for integrated circuits containing copper films, especially in small high aspect ratio features. The high conformality of these films is superior to films deposited by PVD.

Abstract: A fixture for selectively masking a turbine blade 60 includes a locator 10 with a separable receptacle 40 having portals 50. Guide bars 18 extend from the locator for guiding a pair of shield carriers 20 between deployed and retracted positions. Each shield carrier has a shield 26 projecting therefrom. In use, a turbine blade 60, whose root 70 includes a fir tree attachment 72 and a damper pocket 74, is mounted on the fixture so that the receptacle embraces the blade root. The shield carriers are translated along the guide bars until the shields penetrate through the portals and into the receptacle thus segregating the attachment 72 from the damper pocket 74. Masking powder 84 is then compressed into the receptacle to envelop the attachment while leaving the damper pocket unmasked.

Abstract: A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.

Abstract: A method of manufacturing a barrier metal layer uses atomic layer deposition (ALD) as the mechanism for depositing the barrier metal. The method includes supplying a first source gas onto the entire surface of a semiconductor substrate in the form of a pulse, and supplying a second source gas, which reacts with the first source gas, onto the entire surface of the semiconductor substrate in the form of a pulse. In a first embodiment, the pulses overlap in time so that the second source gas reacts with part of the first source gas physically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by chemical vapor deposition whereas another part of the second source gas reacts with the first source gas chemically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by atomic layer deposition. Thus, the deposition rate is greater than if the barrier metal layer were only formed by ALD.

Abstract: An improved process for chromizing and chrome-siliconizing 400-series stainless steel components, and in particular, 430 stainless steel components, such as boiler panel studs. The process includes the addition of between 0.12%-0.25% by weight of calcium fluoride salt to the conventional 4% by weight of ammonium chloride activator salt to the coating composition used in known diffusion coating processes. In a more preferred embodiment, small amounts of silicon powder, such as between about 0.12%-0.25% by weight, are added to the two salts and the diffusion coating material. A coating composition is provided as well.

Abstract: A selective metal layer formation method, a capacitor formation method using the same, and a method of forming an ohmic layer on a contact hole and filling the contact hole using the same, are provided. A sacrificial metal layer is selectively deposited on a conductive layer by supplying a sacrificial metal source gas which deposits selectively on a semiconductor substrate having an insulating film and the conductive layer. Sacrificial metal atoms and a halide are formed, and the sacrificial metal layer is replaced with a deposition metal layer such as titanium Ti or platinum Pt, by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of the metal atoms in the sacrificial metal layer. If such a process is used to form a capacitor lower electrode or form an ohmic layer on the bottom of a contact hole, a metal layer can be selectively formed at a temperature of 500° C. or lower.

Abstract: A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.

Abstract: A process for forming a diffusion aluminide coating on a substrate, such as a component for a gas turbine engine. The process generally entails placing the substrate in a suitable coating chamber, flowing an inert or reducing gas into and through the coating chamber, and then aluminizing the substrate using an aluminizing technique with a substantially constant aluminum activity, such as a vapor phase deposition process. During the aluminizing process, the amount of unreacted aluminum within the coating chamber is controlled by altering the flow rate of the gas through the coating chamber so that a portion of the unreacted aluminum is swept from the coating chamber by the gas. The amount of unreacted aluminum swept from the coating chamber is regulated by metering the gas flow rate in order to control the aluminizing rate and aluminum content of the resulting aluminide coating.

Abstract: A process for forming a diffusion aluminide-hafnide coating on an article, such as a component for a gas turbine engine. The process is a vapor phase process that generally entails placing the article in a coating chamber containing a halide activator and at least one donor material. The donor material collectively consists essentially of at least 0.5 weight percent hafnium and at least 20 weight percent aluminum with the balance being chromium and/or cobalt.

Abstract: A metallic substrate has a substrate surface having a substrate surface of nickel, a substrate aluminum content, and other alloying elements. A maskant is applied overlying the substrate surface to produce a masked substrate surface having an exposed region and a protected region. The maskant includes a plurality of maskant particles, each particle having a maskant particle composition comprising a maskant metal selected from the group of nickel, cobalt, titanium, chromium, iron, and combinations thereof, and a maskant aluminum content. The substrate is aluminided by contacting a source of aluminum to the masked substrate surface, whereby aluminum deposits on the exposed region and does not deposit on the protected region.

Abstract: A nickel-base superalloy substrate includes a surface region having an integrated aluminum content of from about 18 to about 24 percent by weight and an integrated platinum content of from about 18 to about 45 percent by weight, with the balance components of the substrate. The substrate is preferably a single-crystal advanced superalloy selected for use at high temperatures. The substrate may optionally have a ceramic layer deposited over the platinum-aluminide region, to produce a thermal barrier coating system. The platinum-aluminide region is produced by diffusing platinum into the substrate surface, and thereafter diffusing aluminum into the substrate surface.

Abstract: The present invention relates generally to a CVD (Chemical Vapor Deposition) process where at least one source metal, such as, nickel (Ni) or alloys thereof, for example, Ni/Cu, Ni/Co, are deposited on metal surfaces which are capable of receiving the source metal, such as, refractory metal, for example, molybdenum, tungsten or alloys thereof, using at least one gaseous Iodide source, such as, an iodic fluid, for example, hydriodic acid gas. The source metal is securely held in place by at least one high strength inert material.

Abstract: A process for PECVD of selected material films on a substrate comprising the steps of placing a substrate in a PECVD chamber and maintaining the chamber under vacuum pressure while introducing a precursor gas, a reactant gas, and an ionization enhancer agent into the chamber. A plasma is generated from the gases within the chamber. The energy generating the plasma causes the formation of charged species. The resulting charged species of the ionization enhancer agent assists in the formation of chemically reactive species of at least the precursor.

Abstract: A CVD outwardly grown platinum aluminide diffusion coating on a nickel or cobalt base superalloy substrate wherein the platinum modified aluminide diffusion coating is modified to include silicon, hafnium, and optionally zirconium and/or other active elements (e.g. Ce, La, Y, etc.) each in a concentration of about 0.01 weight % to about 8 weight % of the outer additive (Ni,Pt)(Al,Si) layer of the coating. A particular coating includes about 0.01 weight % to less than 2 weight % of each of silicon, hafnium, and zirconium in the outer additive layer, preferably with a Hf/Si ratio less than about 1 and, when Zr also is present, a Hf+Zr/Si ratio of less than about 1. A coating microstructure is provided characterized by an inner diffusion zone or region adjacent the substrate and the outer additive (Ni,Pt)(Al,Si) layer including hafnium silicide second phase particles or regions dispersed throughout the outer additive layer of the coating.

Abstract: A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.

Abstract: An industrial material such as metal, ceramics or plastics whose surface has a film passivated by fluoridation and a process of manufacturing the above industrial material. The industrial material comprises a substrate, a nickel alloy film formed on the substrate and containing nickel, semimetal and/or other metal whose fluoride becomes a volatile compound, and a fluorine passivated film formed at least on a surface of the nickel alloy film in such a manner that the fluorine passivated film contains nickel and does not contain said other metal or the semimetal, and satisfies stoichiometric ratio. The process of manufacturing an industrial material comprises the steps of performing grounding treatment of a surface of a substrate, forming a nickel alloy film, on the surface of the substrate, containing nickel, semimetal and/or other metal, and forming a fluorine passivated film on the nickel alloy film.

Abstract: A method for treating a silicon substrate is described. The silicon substrate is placed into a sputtering equipment. A sputtering step is performed to simultaneously dry clean and amorphize the silicon substrate surface by using the sputtering equipment. A titanium film is deposited on the silicon substrate by the sputtering equipment.

Abstract: The present invention discloses at least one source metal that is embedded in at least one inert material to form a stand-alone structure and process thereof. It is preferred that the source metal is nickel or alloy thereof, and the inert material is at least one ceramic.

Abstract: A Cub(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.

Abstract: An improved process for applying aluminide coatings to superalloy components used in gas turbine applications resulting in a more uniform coating with less hazardous waste by-products. The process involves the steps of placing the superalloy components into a retort with an aluminum-containing source, evacuating air from the retort and introducing an inert gas, heating the retort to a preselected temperature, while maintaining the preselected temperature purging the inert gas from the retort by introducing hydrogen gas, while maintaining the preselected temperature, pulsing, by reducing the retort pressure to a preselected pressure below atmospheric pressure, followed by introducing a halide-containing gas to react with the aluminum-containing source to create an aluminum-rich vapor that deposits aluminum on the components, then reintroducing hydrogen gas into the retort to purge the gases within the retort; and cooling the retort.

Abstract: A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.