Abstract: A CVD method for forming a tungsten (W) film, by using a metallic halide (WF.sub.6) as a source gas, on a barrier metallic film containing titanium (Ti). The method includes providing to the edge portion of a wafer a mixed gas containing Ar gas as an inactive gas and a first gas capable of reacting with the halogen atoms in the metallic halide. The first gas is selected from a group consisting of ethylene, acetylene, butene, propylene, a substitute product thereof, and silane, which have .pi. electrons for activation of reaction with the halogen atoms. When an ethylene gas is used in the mixed gas, the the ethylene gas preferably flows at a flow rate of 2 to 7 percent of the flow rate of the Ar gas flowing at a rate of 1000 to 3000 sccm.

Abstract: A method is disclosed to deposit aluminum coatings on high temperature superalloys for corrosion, oxidation, and erosion protection using low temperature chemical vapor deposition and an organometallic halide precursor, specifically an aluminum alkyl halide. The process is adapted to protective coatings for turbine parts having internal passages. Due to the lower temperatures used during chemical vapor deposition, a broad range of substrate materials can be utilized. The precursor vapors clean the substrate surfaces by removing native oxides while simultaneously depositing aluminum.

Abstract: A process for the production of a heat- and corrosion-resistant porous metal body which is made of a metal or whose surface layer is made of a metal, in which the porous metal body can be alloyed with chromium or a combination of chromium and aluminum uniformly throughout the entire thereof by adjusting the alloy composition in the following manner, i.e., (A) heat-treating the porous metal body in a mixed gas comprising a gas, generated by heating a powdered mixture comprising chromium or its compound and NH.sub.4 Cl at 950.degree. to 1100.degree. C., and a diluent reducing gas at 800.degree. to 1100.degree. C., or (B) heat-treating the porous metal body in a mixed gas comprising a gas, generated by heating a powdered mixture comprising aluminum or its compound, chromium or its compound and NH.sub.4 X, wherein X is I, F, Cl or Br, at a weight ratio of the chromium or its compound to the aluminum or its compound of 10 to 80 in terms of Cr and Al respectively at 950.degree. to 1100.degree. C.

Abstract: A method of improving the oxidation resistance of a platinum modified aluminide coating formed on a nickel base superalloy substrate, comprises providing a platinum layer on the substrate, heating the substrate in a coating retort to a temperature of at least about 1000.degree. C., forming external of the coating retort a high purity coating gas comprising hydrogen and aluminum trichloride, and introducing the coating gas into the coating retort to contact the heated substrate to form an outwardly grown, single phase [(Ni,Pt)]Al] platinum modified aluminide coating having reduced concentration of at least one of a substrate substitutional alloying element and a surface active tramp element selected from at least one of B, P, and S in said coating as compared to a platinum modified aluminide coating formed at a lower temperature.

Abstract: A two-step nucleation W-CVD process has been developed to suppress volcano formation which usually appears at W/TiN boundary. The process using different combination of spacing of W-CVD chamber between the shower head and heater and chamber pressure has been used to form an uniform nucleation layer (with uniformity of 5-6%). An uniform nucleation layer can prevent WF.sub.6 penetration during W-bulk deposition. Moreover, the reaction between WF.sub.6 and Ti can be suppressed. The formation of volcano at the clamp area around the wafer edge can be effectively reduced.

Abstract: A gaseous mixture of a titanium halide and silane is introduced to a plasma or thermal CVD reactor to induce a reaction such that a conformal and pure titanium film is deposited onto a semiconductor device within the reactor. The titanium halide has a chemical form of TiX.sub.4, where X is a halogen. Other gaseous combinations of the titanium halide, ammonia, hydrogen, a halogen and silane are subjected to plasma or thermal CVD to induce a reaction to deposit titanium silicide and titanium nitride films onto the semiconductor device. Successive CVD processes create bilayers of TiSi.sub.x /TiN or Ti/TiN, and/or trilayers of TiSi.sub.x /Ti/TiN onto the semiconductor device.

Abstract: A process of growing a film of a metal on a substrate in a selective area thereof by chemical vapor deposition, the process comprising the steps of: preparing a source having a molecule comprising a metal and a radical; providing a substrate having a selective area made of a first substance which is unreactive with the radical and the other area made of copper which is reactive with the radical; and supplying the source onto the substrate held at a film growing temperature to induce a reaction on the substrate, such that, in the selective area, the molecule of the source is bonded to the first substance and decomposed to precipitate the metal on the first substance while, in the other area, the radical of the molecule is combined with the copper to cover the other area of the substrate with a coating which is unreactive with the molecule of the source.

Abstract: A method for the simultaneous deposition of chromium and silicon to form a diffusion coating on a workpiece uses a halide-activated cementation pack with a dual halide activator. Elemental metal powders may be employed with the dual activator. A two-step heating schedule prevents blocking a chromium carbide from forming at the surface of the workpiece. Small contents of either Ce or V can be added to the Cr+Si contents of the coating by introducing oxides of Ce or V into the filler of the pack.

Abstract: In a method for manufacturing electrodes for medical applications, particularly implantable stimulation electrodes, having an active layer of porous titanium nitride, a substrate of electrically conductive material that is in an atmosphere containing titanium, nitrogen and hydrogen is irradiated with an excimer laser through an optical mask, and a structure of porous titanium nitride is deposited on the substrate.

Abstract: In manufacturing a corrosion-resistant metallic porous member having high Cr content by diffusion process in which the material is heat-treated, a plurality of heat cycles are used to achieve uniform Cr content in the thickness direction.Metallic porous body of Ni, Fe, Ni--Cr or Fe--Cr is buried in a powder of Al, Cr and NH.sub.4 Cl. Inert gas such as Ar and H.sub.2 is introduced and the porous body is heat treated at 800.degree.-1100.degree. C. In the heat treatment, at least two temperature-increase and temperature-decrease steps are included.

Abstract: A method of forming a conductive film on an insulating region of a substrate wherein a surface of the insulating region formed on the substrate is activated by irradiating the surface with electrons, ions or light. Next, a metal film pattern constituting, for example, an electrical interconnection, is deposited on the surface by applying a selective chemical vapor deposition process using a metal halide gas.

Abstract: A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl.sub.4, hydrogen, nitrogen and NF.sub.3 into a film-forming chamber containing a semiconductor substrate (1) having a groove made in its surface, after the chamber has been evacuated to 10.sup.-4 Torr or less; and converting these gases into plasma, thereby forming a thin TiN film on only that portion of the groove which is other than the wall surfaces of the groove.

Abstract: In order to decompose TiCl.sub.4 to Ti and Cl completely, extremely high energy of more than 400 kcal mol.sup.-1 is required.In the method according to the present invention, use of unequilibrium plasma under reduced pressure is noticed, and it is especially noticed that in the plasma generated by resonance phenomenon, there are high energy electrons, which collide and enhance decomposition and reduction. Therefore, itis possible to form a Ti film without such high substrate temperature as 2000.degree. C., and more, to form a Tifilm with good step coverage even in a fine contact hole.

Abstract: A method is disclosed to deposit aluminum and a metal oxide on substrates for improved corrosion, oxidation, and erosion protection. Low temperature chemical vapor deposition is used. A homogeneous biphase coating may be deposited, as well as layers of aluminum and metal oxides.

Abstract: A method is disclosed to deposit aluminum and platinum on substrates for improved corrosion, oxidation, and erosion protection. Low temperature chemical vapor deposition is used. A homogeneous biphase coating of aluminum and platinum may be deposited, as well as sequential layers of aluminum and platinum.

Abstract: Process for producing novel coated nickel and/or cobalt superalloy bodies having increased resistance to oxidation, corrosion and thermal fatigue at high temperatures. The process comprises applying a thin layer of a platinum-group metal, siliciding and heating to an elevated temperature to diffuse and integrate the silicided platinum-group metal into the surface of the superalloy body. Then the superalloy body is exposed to a diffusion powder composition containing sources of aluminum or aluminum/chromium metals and heated in a hydrogen or inert gas atmosphere to an elevated temperature to codeposit and diffuse aluminum or aluminum and chromium into the silicided platinum-group metal-treated surface. Finally, the superalloy body is heated to its solvus temperature to form a ductile surface having an outer zone comprising a platinum-group metal aluminide, optionally ductilized by the solutioning therein of beta chromium.

Abstract: A method for the simultaneous deposition of chromium and silicon to form a diffusion coating on a workpiece uses a halide-activated cementation pack with a dual halide activator. Elemental metal powders may be employed with the dual activator. A two-step heating schedule prevents blocking a chromium carbide from forming at the surface of the workpiece. Small contents of either Ce or V can be added to the Cr+Si contents of the coating by introducing oxides of Ce or V into the filler of the pack.

Abstract: A method for making a tungsten plug of a semiconductor device is disclosed.The method comprises the steps of: applying an etching process to a predetermined region of an insulating film formed a conductive layer to form a contact hole, said conductive layer being exposed at the predetermined region; adding a reactive gas containing tungsten metal ions into hydrogen radical plasma to form a tungsten thin film over said insulating film and said exposed conductive layer, said tungsten thin film having a good adhesiveness to said insulating film and a very thin thickness; depositing a blanket tungsten thin film in a predetermined thickness on the resulting structure; applying an etching process to said blanket tungsten thin film and subsequently to said tungsten thin film to expose the upper surface of said insulating film.The tungsten plug formed in accordance with the present invention contains no key holes therein since the tungsten thin film is formed in a uniform thickness.

Abstract: Inner and outer surfaces of structural components are aluminized by an aluminum gas diffusion process. For this purpose a gas mixture of a halogenous gas, aluminum monohalide gas, hydrogen, and negligible proportions of aluminum trihalide gas is caused to flow over the outer and inner surfaces of the component to be coated. The process is performed in a vessel in which at least two different temperature zones are maintained for keeping one or more aluminum sources at a higher temperature than the component to be coated. Especially gas turbine engine blades are protected against oxidation and corrosion by the so formed aluminum diffusion coatings on outer and inner surfaces of the blades.

Abstract: A chemical vapor deposition method is provided for case hardening a ferrous metal interior tubular surface by exposure to diffusible boron with or without other diffusible elements such as silicon to enhance the wear, abrasion and corrosion resistance of the surface. The pack composition used allows for borosiliconizing of the interior surface without sintering or adhering to itself and/or adhering to the surface. The pack composition comprises between about 5% and about 20% by weight of a suitable source of boron; between about 2% and about 10% by weight of silicon material; between about 2% and about 15% by weight of an activator; and the balance being a non-sintering, non-adhering filler.

Abstract: A method for reducing the tendencies of small holes to become packed with particulate material during pack cooling. An organic substance is used to wholly or partially fill small holes prior to placing the part in the packed cooling material. The organic material decomposes during the packed cooling process.

Abstract: A method of depositing tungsten films comprising heating a substrate to a temperature above 200.degree. C. in a chemical vapor deposition reactor, flowing a stream of carrier gas over the substrate in the reactor, and simultaneously introducing mixtures of WF.sub.6 and organohydrosilanes into the reactor.

Abstract: The invention relates to the method of pretreating a deposition chamber intended to be used for the selective vapor deposition of tungsten, characterized in that a plasma of fluorine-containing gas, optionally combined with an inert diluting gas, is induced in the said deposition chamber.Advantageously, the same fluorine treatment is applied to the substrate intended to receive the selective tungsten deposition.

Abstract: A pack cementation method is described for producing conversion coatings on a ceramic. In particular, silicon carbide is coated with Cr.sub.2 O.sub.3 -forming compounds for improved sulfidation and ash-deposit resistance. The method is applicable to continuous fiber ceramic composites or a monolithic substrate. The conversion coatings are multilayered coating systems with the coating morphologies expressed as follows:Cr.sub.23 C.sub.6 /Cr.sub.7 C.sub.3 /Cr.sub.7 C.sub.3 -Cr.sub.3 Si/Cr.sub.5 Si.sub.3 C.sub.x /SubstrateCr/Cr.sub.3 Si/Cr.sub.5 Si.sub.3 C.sub.

Abstract: An integral process is provided for depositing onto, and etching a layer of copper from, a multi-layer structure. The subject process, which is conducted within a vacuum chamber, comprises providing a multi-layer having at least one major surface in which contact/vias are located. Next, a copper precursor is deposited onto at least one major surface of the multi-layer structure and into the contact/vias. The substrate temperature of the multi-layer structure in the vacuum chamber is maintained above the decomposition temperature of the copper precursor during the deposition thereof. In the etching phase of the integral process, an protective etch mask is provided on the major surface. Then, the substrate temperature of the multi-layer structure is lowered in the vacuum chamber below the decomposition temperature of the deposited copper precursor. Etching of the deposited copper film is then conducted employing an etchant material comprising the decomposition product of the copper precursor.

Abstract: Method for the selective deposition of tungsten on a silicon surface. A silicon surface is provided with a masking structure of, for example, SiO.sub.2. The deposition from the vapor phase is implemented in a CVD reactor from a mixture of process gases such that the masking structure remains essentially free of tungsten. The process parameters of temperature, pressure and flow-through rates of the process gases for the selective deposition are determined for a prescribed deposition rate by solving an equation system that contains the conservation laws for the mass, the chemical constituents participating in the deposition reaction, the momentum and the energy taking the boundary conditions of the CVD reactor into consideration, and the effects of thermodiffusion and multi-constituent diffusion.

Abstract: A method of cleaning a metal surface includes covering the portion of the metal surface with a cleaning tape. The cleaning tape is chromium in combination with a fluoride ion source bound together by fibrillated polytetrafluoroethylene. This is applied to the portion of the area to be cleaned and is subject to heat treatment at about 1800.degree. F. and a reducing atmosphere of preferably hydrogen. This effectively cleans only the area covered by the tape. Further, the tape and binder format acts to force fluoride ions into the cracks on the surface providing a significantly improved cleaning operation.

Abstract: A method is provided for forming films comprising Fe, Ru or Os employing the techniques of chemical vapor deposition to decompose a vapor comprising an organometallic compound of the formula (a): (CO).sub.4 ML or (b): M.sub.2 [.mu.-.eta.:.eta..sup.4 -C.sub.4 ](CO).sub.6 ; wherein L is a two-electron donor ligand and each R is H, halo, OH, alkyl, perfluoroalkyl or aryl; so as to deposit a coating comprising one or more of said metals on the surface of a substrate.

Abstract: Apparatus and method for simultaneously coating interior and exterior surfaces of articles, such as advanced turbine airfoils, the interior surfaces defined by narrow, complex passageways. The apparatus and method, in addition to providing for simultaneous coating of interior and exterior surfaces, also permits additional control over the coating process by permitting control over the partial pressure of reactive gas introduced into the reaction chamber. The apparatus also permits for subsequent thermal treatment of the coated parts in an inert gas atmosphere with no intermediate cooling step thereby reducing costs while eliminating the potential for damage due to handling by the elimination of at least one handling operation.

Abstract: Diffusion coatings incorporating approximately 18 to 35 wt % Cr and 1 to 3% Si in 2.25Cr-1.0Mo steel and 1018 steel have been produced using a pack cementation method. The codeposition of these concentrations of Cr and Si into the 2.25Cr-1.0Mo and 1018 steel requires the use of a "mixed activator" (fused salt solution of NaF and NaCl). Cyclic oxidation tests in air at 700.degree. C. of a coated 2.25Cr-1.0Mo steel coupon with a surface concentration of 34Cr-3Si have shown excellent cyclic oxidation resistance. Furthermore, a 1018 coupon coated to a surface concentration of Fe-30 wt % Cr-3Si shows negligible aqueous corrosion in an aerated 3.5% NaCl solution at room temperature. These coatings have provided similar protection in more complex oxidizing and reducing atmospheres.

Abstract: A low temperature chemical vapor deposition process is used to encapsulate aluminum conductors on the surface of a silicon substrate to form bimetallic conductors. The refractory material is desirably tungsten.

Abstract: The deposition of a copper-containing layer on a substrate by decomposing, particularly by a CVD process, a compound corresponding to the formula (I)RO--Cu--L (I)in whichR represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, andL represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane,is described, together with previously unknown compounds of formula (I) which may be used in the process.

Abstract: Nucleation of a refractory metal such as tungsten is initiated on a substrate of TiN without the use of silane by introducing hydrogen into a CVD reactor before the introduction of the reactant gas containing the metal, brought to reaction temperature and to reaction pressure. The process is most useful for CVD of tungsten onto patterned TiN coated silicon semiconductor wafers. Alternatively, hydrogen is introduced in a mixture with the metal containing gas, such as WF.sub.6, and maintained at subreaction pressure, of for example 100 mTorr, until the substrate is stabilized at a reaction temperature of approximately 400.degree. C. or higher, to cause the dissociation of hydrogen on the wafer surface, then elevated to a relatively high reaction pressure of, for example, 60 Torr at which nucleation is achieved. Also, the reduction reaction that deposits the tungsten film proceeds without the need for a two step nucleation-deposition process.

Abstract: A pack cementation coating tape such as a nickel aluminide coating tape includes a reactive metal such as aluminum, a filler such as aluminum oxide, and a halogen carrier such as ammonium chloride held together by fibrillated polytetrafluoroethylene. The tape is useful in coating localized areas of nickel containing alloys to provide a nickel aluminide surface coating. The coating is formed by positioning the tape over the metal surface and heating the tape to a temperature of about 1250.degree. F. wherein the element metal such as aluminum reacts with the halogen carrier and in turn reacts with nickel on the surface of the nickel alloy to form the nickel aluminide coating. A masking tape formed from a separating layer, a brazing alloy layer and a nickel layer can be used to mask localized portions of the surface to prevent coating at these areas.

Abstract: An improved process is disclosed for depositing a layer of metal on a semiconductor wafer wherein a shadow ring normally engages the end edge of the front surface of the wafer to inhibit deposition of the metal on the backside of the wafer and a barrier or nucleation layer is deposited on the unshielded portion of the front surface of the wafer prior to the deposition of the metal layer thereon, and wherein gases used to form the metal layer may contact and react with underlying materials on the front surface of the wafer beneath the shadow ring.

Abstract: A method of forming a multilayered structure by flattening an uneven deposited surface thereof. It comprises the steps of: forming lower and higher portions on the deposited surface with different kinds of materials; and depositing a material selectively on the lower portions alone on the surface using the difference in nucleation density between the deposited materials due to the kinds of the materials of the deposited surface, thereby flattening the surface.

Abstract: A process for selectively depositing platinum on a conductive or semiconductive substrate has the steps of: patterning a polyimide layer on the substrate to have exposed areas and unexposed areas; and, at an operating temperature and an operating pressure, flowing a platinum precursor gas over the substrate.

Abstract: An improved method is provided for depositing a thin copper aluminum alloy film on a patterned silicon substrate. A copper base layer conforming to the existing pattern is initially formed on the surface of the substrate, followed by contact with vapors of an aminealane compound, which causes aluminum to be selectively deposited on the copper base layer portion of the substrate. Preferably, copper is applied to a diffusion barrier surface such as tungsten using chemical vapor deposition from a complex of copper (I) perfluoroalkyl-.beta.-diketonate and an olefin or silylolefin. The entire process of developing an alloy film can be carried out without exceeding 200.degree. C.

Abstract: A method for preparing graphite intercalation compounds having metal or metal compounds. The method consists of the simultaneous thermal decomposition of two kinds of starting materials by a CVD (Chemical Vapor Deposition) method in which hydrocarbon as a source material for the host graphite and other organometal reagents or metal halides for guest metal species or metal compound are decomposed simultaneously in a reactor in order to intercalate the metal species or metal compound into carbon being deposited on the substrate.

Abstract: A chemical vapor deposition (CVD) method utilizing an apparatus comprising a reactor having a coating chamber at elevated temperature, means for supporting substrates to be coated at different zones in the coating chamber, and means for supplying a gaseous reactant stream to the chamber for distribution to the coating zones in a manner that the stream is heated to substantially different temperatures at different coating zones. Reactivity-altering material is disposed at the coating zones for contact by the reactant stream supplied thereto before the reactant stream contacts a substrate at the zones. The reactivity-altering material includes a composition that differs between coating zones in dependence on the reactant stream temperatures at the coating zones as necessary to alter the reactivity of the reactant (i.e., activity of a particular chemical specie of the reactant stream) stream at the coating zones in a manner to provide substantially the same reactant reactivity at all coating zones.

Abstract: Diffusely reflecting metal oxide, preferably titanium dioxide, coatings are prepared on substrates by atomic layer epitaxy. Successive pulses of a hydrolyzable metal chloride and water are introduced at pressures in the range of about 180-1250 and about 150-650 millitorr, respectively, the pulse length being effective to produce a coating with an average thickness of about 15-25 .ANG.ngstroms during a single pulse pair.

Abstract: A method of depositing micron-sized metal lines on a dielectric substrate, such as polyimide. The dielectric is covered with a thin metallic layer, of a first metal placed in a reaction cell containing a gas-phase molecular species containing a second metal, and exposed to a focused laser beam. A translation stage moves the dielectric relative to the beam to selectively deposit micron-sized second metal lines on the metallic layer. The metallic layer on the unirradiated portion of the substrate is subsequently etched away, leaving the lines adhered to the dielectric surface.

Abstract: A method for the production of ceramic matrix composites by chemical vapor infiltration. The method includes exposing an infiltrated preform to microwave energy, with pressure variation of the reactant gases in the processing chamber and/or temperature variation of the preform during processing, to produce substantially improved composites. The process provides higher deposition rates within the core of the ceramic matrix composite, higher densification which advantageously initiates within the interior of the ceramic matrix composite and proceeds radially outward, and a thick wall ceramic matrix composite with an overall reduced density gradient.

Abstract: The present invention provides a method of forming a free standing shape made of a material containing refractory metal, which entails providing a mandrel in a CVD enclosure, injecting a refractory halide gas and a reducing gas in the enclosure, reacting the gases in the enclosure to generate a material containing refractory metal, growing a layer of the material containing refractory metal on the mandrel and removing the mandrel to obtain the free standing shape, wherein the reducing gases is a silicon hydride gas or a mixture thereof.

Abstract: A method for coating articles, such as gas turbine blades, with a coating of variable thickness by securing a shield having one or more holes extending therethrough to the article thereby defining a shielded portion of the article, exposing the article and shield to a metal-bearing gas which is circulated around the article to deposit a metallic coating thereon, wherein the circulation of the gas adjacent the shielded portion of the article is restricted by the presence of the shield, thereby producing a substantially thinner coating on the shielded portion of the article than on the unshielded portion.

Abstract: A powder mixture for applying gas phase aluminide coatings to nickel or cobalt base superalloys is described. A preferred mixture consists essentially of Co.sub.2 Al.sub.5, NH.sub.4 F.HF, and chromium metal. The mixture is substantially free of aluminum oxide.

Abstract: A method for the powder pack coating of hollow structural components is performed with spherical powder particles of a donor metal in which the hollow component is embedded. During the embedding, the component is subjected to a tumbling motion about several spatial axes to fill all cavities in the component. After the powder pack coating process the cavities of the component are cleared of any excess powder particles under the action of a gas stream. This method is suitable especially for coating engine blades having cooling ducts and cooling air holes, such as turbine blades. The effect of the forced air flow through the internal cavities for the removal of excess powder out of the hollow component is enhanced by simultaneously vibrating the component.

Abstract: An improved method for aluminizing a ferritic material by forming an aqueous aluminum slurry composition, applying the aqueous aluminum slurry composition to the ferritic material to form a coating, adding a halide activator to the coated ferritic material and heating the coated ferritic material to a temperature of about 1275.degree. F. to about 1300.degree. F. for approximately 24 hours. The use of the lower temperature thermal cycle minimizes the change in the mechanical properties of a steel substrate.

Abstract: A crucible used in a powder pack plating process has an aperture below the upper surface of the powder pack to allow a density driven flow of the plating gas generated by the powder pack to move through the powder pack.

Abstract: A process for forming a deposited film on a substrate in the absence of a plasma is conducted by generating in an activation space an activated species capable of chemically reacting with a compound for film formation and introducing into a film-forming space having the substrate, the activated species and the compound for film formation. The compound for film formation has the general formula R.sub.n M.sub.m wherein R is a hydrocarbon radical, M is an element selected from one of Groups II-IV, n is an integer equal to the valence of M and m is a positive integer equal to the valence of R. The film-forming space is remote from the activation space. The activated species initiates a chemical reaction with the compound for film formation sufficient to generate chemical species of said film-forming compound capable of directly forming the deposited film.