Abstract: Provided is a thin-film forming raw material containing a compound represented by the following formula (1): in the formula (1), R1 to R5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R2, R3, and R4 represents the group containing a fluorine atom.

Abstract: A process for subsequent surface modification of finely structured structures formed from hard inorganic materials, and the structures obtainable by this process as such. The structure has, in at least one spatial direction, a material thickness M of not more than 1000 nm and as an overall structure having, in at least one spatial direction, a measurement which is at least 5 times the material thickness M. The process includes treating the structures with an organic liquid under supercritical conditions.

Abstract: A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains an alkyl zinc halide having the following formula: R—Zn—X, where R is an alkyl group CnH2n+1, and X is a halogen group. The n is a number ranging from 1 to 4, and the alkyl group is one selected from among a methyl group, an ethyl group, an i-propyl group and a t-butyl group. The halogen group contains one selected from among F, Br, Cl and I. A method of depositing a zinc oxide-based thin film includes loading a substrate into a deposition chamber; and supplying the zinc oxide precursor which contains the above-described alkyl zinc halide and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. The zinc oxide-based thin film is deposited on the substrate via atmospheric pressure chemical vapor deposition.

Abstract: The invention provides methods for forming silicon oxide-containing layer(s) on a substrate, such as glass, by heating a substrate, vaporizing at least one precursor comprising a monoalkylsilane having an alkyl group with greater than two carbon atoms to form a vaporized precursor stream, and contacting a surface of the heated substrate with the vaporized precursor stream at about atmospheric pressure to deposit one or more layers comprising silicon oxide onto the surface of the substrate. The invention is particularly useful for applying an anti-iridescent coating to glass in an online float glass process.

Abstract: Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): (M11-aM2a)ObNc,??(I) wherein 0?a<1, 0<b?3, 0?c?1, M1 represents a metal selected from (Hf), (Zr) and (Ti); and M2 represents a metal atom atoms, which comprises the following steps: A step a) of providing a substrate into a reaction chamber; A step (b) of vaporizing a M1 metal containing precursor of the formula (II): (R1yOp)x(R2tCp)zM1R?4-x-z??(II) wherein 0?x?3, preferably x=0 or 1, 0?z?3, preferably z=1 or 2, 1?(x+z)?4, 0?y?7, preferably y=2 0?t?5, preferably t=1, (R1yOp) represents a pentadienyl ligand, which is either unsubstituted or substituted; (R2tCp) represents a cyclopentadienyl (Cp) ligand, which is either unsubstituted or substituted, to form a first gas phase metal source; A step c) of introducing the first gas phase metal source in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectric

Abstract: This disclosure relates to methods that include depositing a first component and a second component to form a film including a plurality of nanostructures, and coating the nanostructures with a hydrophobic layer to render the film superhydrophobic. The first component and the second component can be immiscible and phase-separated during the depositing step. The first component and the second component can be independently selected from the group consisting of a metal oxide, a metal nitride, a metal oxynitride, a metal, and combinations thereof. The films can have a thickness greater than or equal to 5 nm; an average surface roughness (Ra) of from 90 to 120 nm, as measured on a 5 ?m×5 ?m area; a surface area of at least 20 m2/g; a contact angle with a drop of water of at least 120 degrees; and can maintain the contact angle when exposed to harsh conditions.

Abstract: A fabrication method for fabricating a metal oxide film introduces H2 gas and O2 gas or, H2O2 gas, into a catalytic reactor to make contact with a catalyst to generate H2O gas. The H2O gas that is generated is jetted from the catalytic reactor to react with a metal compound gas, to thereby deposit the metal oxide thin film on a substrate and fabricate the metal oxide thin film.

Abstract: A method of making a heat treated coated article includes forming at least one layer comprising diamond-like carbon (DLC) on a glass substrate, and forming a removable protective film on the glass substrate over at least the layer comprising DLC. The removable protective film includes first and second inorganic layers, the first inorganic layer comprising zinc oxide and nitrogen and being located between the layer comprising DLC and the second inorganic layer. The glass substrate may be heat treated so that during the heat treating the protective film prevents significant burnoff of the layer comprising DLC.

Abstract: A substrate processing method includes steps of: arranging a substrate in a chamber; introducing H2 gas at a first flow rate and O2 gas at a second flow rate independently from the H2 gas into a catalyst reaction portion in which catalyst is accommodated, wherein H2O gas produced from the H2 gas and the O2 gas that contact the catalyst is ejected from the catalyst reaction portion toward the substrate; and reducing a flow rate of the O2 gas introduced to the catalyst reaction portion to a third flow rate that is lower than the second flow rate, wherein the steps of introducing the H2 gas and the O2 gas and reducing the flow rate of the O2 gas are repeated in this order at a predetermined repetition frequency, thereby processing the substrate.

Abstract: A method for modifying a porous substrate, including: coating a metal hydroxide layer on a porous substrate; and calcining the porous substrate with the metal hydroxide layer coated thereon to transform the metal hydroxide layer into a continuous metal oxide layer, forming a modified porous substrate. The disclosure also provides a modified porous substrate.

Abstract: Methods of depositing a metal containing dielectric film on a substrate are disclosed. The metal containing dielectric film has the formula (M11-a M2a) Ob Nc, wherein 0?a<1, 0<b?3, 0?c?1, M1 represents a metal selected from (Hf) or (Zr); and M2 represents a metal atom. The method generally uses an M1 metal containing precursor selected from: Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, or Hf(tBu2Cp)(NMe2)3.

Abstract: A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains an alkyl zinc halide having the following formula: R—Zn—X, where R is an alkyl group CnH2n+1, and X is a halogen group. The n is a number ranging from 1 to 4, and the alkyl group is one selected from among a methyl group, an ethyl group, an i-propyl group and a t-butyl group. The halogen group contains one selected from among F, Br, Cl and I. A method of depositing a zinc oxide-based thin film includes loading a substrate into a deposition chamber; and supplying the zinc oxide precursor which contains the above-described alkyl zinc halide and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. The zinc oxide-based thin film is deposited on the substrate via atmospheric pressure chemical vapor deposition.

Abstract: Complexes of metals and N,O polydentate ligands are useful as precursors in the preparation of doped zinc oxide coatings by chemical vapor deposition.

Abstract: A method of forming on at least one support at least one metal containing dielectric films having the formula (M11-a M2a) Ob Nc, wherein: 0?a<1, 01 and M2 being metals Hf, Zr or Ti using precursors with pentadienyl ligands and/or cyclopentadienyl ligands.

Abstract: The method and system for selenization in fabricating CIS and/or CIGS based thin film solar cell overlaying cylindrical glass substrates. The method includes providing a substrate, forming an electrode layer over the substrate and depositing a precursor layer of copper, indium, and/or gallium over the electrode layer. The method also includes disposing the substrate vertically in a furnace. Then a gas including a hydrogen species, a selenium species and a carrier gas are introduced into the furnace and heated to between about 350° C. and about 450° C. to at least initiate formation of a copper indium diselenide film from the precursor layer.

Abstract: A coated article includes a substrate, a first ceramic layer deposited on the substrate, a color layer deposited on the first ceramic layer, and a second ceramic layer deposited on the color layer. The first ceramic layer substantially includes substance M, elemental O and elemental N, wherein M is Al or Si. The color layer substantially includes metal M?, O and elemental N, wherein M? is elemental Al or Zn. The second ceramic layer substantially includes substance M, elemental O and elemental N, wherein M is Al or Si.

Abstract: A coated article is provided. A coated article includes a substrate, a ceramic layer deposited on the substrate by vacuum plating, and a color layer deposited on the ceramic layer. The ceramic layer substantially includes substance M, elemental O and elemental N, wherein the M is Al or Si. The color layer substantially includes metal M?, elemental O and elemental N, wherein the M? is Al or Zn.

Abstract: A method for forming a transparent conductive film by atomic layer deposition includes providing more than one kind of oxide precursor which is individually introduced into atomic layer deposition equipment through different sources, wherein the oxide precursors are consecutively introduced into the atomic layer deposition equipment at the same time, so that the oxide precursors are simultaneously present in the atomic layer deposition equipment, to form a uniform mixture of oxide precursors in a single adsorbate layer for settling onto a substrate in the atomic layer deposition equipment. Then, an oxidant is provided to react with the oxide precursors to form a single multi-oxide atomic layer. The above mentioned steps are repeated to form a plurality of multi-oxide atomic layers.

Abstract: A method for preparing IGZO particles and a method for preparing an IGZO thin film by using the IGZO particles are disclosed. The method for preparing the IGZO particles comprises the following steps: (A) providing a solution of metal acid salts, which contains a zinc salt, an indium salt, and a gallium salt; (B) mixing the solution of the metal acid salts with a basic solution to obtain an oxide precursor; and (C) heating the oxide precursor to obtain IGZO particles.

Abstract: A method of making a heat treated (HT) coated article to be used in shower door applications, window applications, or any other suitable applications where transparent coated articles are desired. For example, certain embodiments of this invention relate to a method of making a coated article including a step of heat treating a glass substrate coated with at least a layer of or including carbon and an overlying protective film including a zinc oxide inclusive layer. Following and/or during heat treatment (e.g., thermal tempering, or the like) the protective film may be removed. Other embodiments of this invention relate to the pre-HT coated article, or the post-HT coated article.

Abstract: In a chemical vapor deposition process simple precursors such as a rare earth nitrate or acetate, Ba-nitrate or acetate and Cu-nitrate or acetate are dissolved in an appropriate solvent, preferably water, to form a solution, nebulized into a fine mist and applied to a substrate.

Abstract: The zinc oxide nanorod thin film in accordance with the present invention is highly condensed and has ideal photoelectric properties. The method for making the zinc oxide nanorod thin film has two steps: forming a zinc oxide seed layer comprising multiple crystals each having a grain size of 1-100 nm on a basal plate and preparing a zinc oxide nanorod thin film growing solution in which the zinc oxide seed layer is allowed to grow a zinc oxide crystal columnar layer at a growing temperature ranging from 50 to 100° C. for a growing time ranging from 0.5 to 10 hours to form a zinc oxide nanorod thin film, wherein the zinc oxide nanorod thin film growing solution is a 0.001-0.1 M aqueous zinc ion solution comprising hexamethylenetetramine.

Abstract: What is described and claimed is an atmospheric chemical vapor deposition method of making a low-resistivity, doped zinc oxide coated glass article, made by directing one or more streams of gaseous reactants, specifically a zinc containing compound, a fluorine containing compound, an oxygen containing compound, and at least one compound containing one or more of boron, aluminum, gallium and indium onto a surface of a heated glass substrate.

Abstract: A method of making a heat treated (HT) coated article to be used in shower door applications, window applications, or any other suitable applications where transparent coated articles are desired. For example, certain embodiments of this invention relate to a method of making a coated article including a step of heat treating a glass substrate coated with at least a layer of or including diamond-like carbon (DLC) and an overlying protective film (e.g., of or including zinc oxide) thereon. In certain example embodiments, the protective film may be ion beam treated with at least carbon ions. It has been found that the ion beam treatment improves the shelf-life of the product prior to HT. Following and/or during heat treatment (e.g., thermal tempering, or the like), the protective film may be removed.

Abstract: A method of forming a zinc oxide film or a magnesium zinc oxide film which has a high transmittance. The method of forming a zinc oxide film or a magnesium zinc oxide film includes (A) converting a solution containing zinc, or zinc and magnesium into mist, (B) heating a substrate, and (C) supplying the solution converted into mist, and ozone to a first main surface of the substrate under heating.

Abstract: There is provided a method of making a heat treated (HT) coated article to be used in shower door applications, window applications, or any other suitable applications where transparent coated articles are desired. The method may include heat treating a glass substrate coated with at least a layer of or including diamond-like carbon (DLC) or other type of carbon, with an oxygen barrier layer provided thereon directly or indirectly. Optionally, a release layer of a material such as zinc oxide or the like may be provided between the oxygen barrier layer and the DLC. In certain example embodiments, the oxygen content of at least part of the protective film when deposited may be determined based on whether the coated surface is to be bent in a convex manner, to be bent in a concave manner, or to remain flat. Following heat treatment, which may include bending the coated surface into a convex or concave shape, and quenching, the protective film may be removed by washing or the like.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: A method of making a heat treated (HT) coated article to be used in shower door applications, window applications, or any other suitable applications where transparent coated articles are desired. For example, certain embodiments of this invention relate to a method of making a coated article including a step of heat treating a glass substrate coated with at least a layer of or including diamond-like carbon (DLC) and an overlying protective film thereon. In certain example embodiments, the protective film may be of or include an oxide of zinc. Following and/or during heat treatment (e.g., thermal tempering, or the like) the protective film may be removed. Other embodiments of this invention relate to the pre-HT coated article, or the post-HT coated article.

Abstract: A method for fabricating a photonic crystal structure is disclosed herein for forming a cavity-type or a pillar type photonic crystal structure of a large area. By the property that a hetero-interface inhibits epitaxial growth, a patterned film layer is formed over the epitaxy substrate, so a photonic crystal structure is grown vertically by epitaxy in area outside of the patterned film layer on the epitaxy substrate. Furthermore, by designing the pattern of the patterned film, a defect mode photonic crystal structure such as an optical waveguide, an optical resonator and a beam splitter can be formed.

Abstract: Object To provide a technique for efficiently forming a metal oxide thin film made of zinc oxide or the like on a substrate at a low cost, without requiring a large amount of electrical energy. Means of Solution H2 gas and O2 gas or, H2O2 gas, is introduced into a catalytic reactor to make contact with a catalyst to generate H2O gas, and the H2O gas is jetted from the catalytic reactor to react with a metal compound gas, to thereby deposit a metal oxide thin film on a substrate and fabricate the metal oxide thin film.

Abstract: The present invention provides a method and apparatus for forming a zinc oxide thin film with high transparency and high conductivity on a surface of a flexible substrate such as plastic without the indispensable requirement of doping impurities. In the method of forming a zinc oxide thin film by reacting oxygen radicals and zinc atoms on a surface of a substrate placed in a film-forming chamber evacuated to a vacuum, the density of crystal defects that are defects of the atomic arrangement of the zinc oxide thin film is controlled by the temperature of the substrate, and the zinc oxide thin film is thereby formed. It is suitable to form the film while maintaining the temperature of the substrate at 400° C. or less to intentionally disturb the regularity of the atomic arrangement of the zinc oxide thin film.

Abstract: A process for the production of a zinc oxide coating on a moving glass substrate provides a precursor mixture of a dialkylzinc compound, an oxygen-containing compound and an inert carrier gas. The precursor mixture is directed along a surface of the glass substrate in an atmospheric pressure, on-line, chemical vapor deposition process. The precursor mixture is reacted at the surface of the glass substrate to form a zinc oxide coating, essentially devoid of nitrogen, at a growth rate of >100 ?/second.

Abstract: The invention described and claimed herein relates to a chemical vapor deposition process for depositing a zinc oxide coating on a substrate by delivering two gaseous precursor streams to a surface of the substrate, and mixing the gaseous precursor streams at the substrate surface for a time sufficiently short so as to form a zinc oxide coating at a deposition rate greater than 5 nm/second.

Abstract: A method of forming zinc oxide films on a heated, moving glass substrate utilizes a gaseous precursor mixture comprising an alkyl zinc compound chelated by at least one tridentate ligand, an oxygen-containing compound, and one or more inert carrier gases.

Abstract: This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

Abstract: A method for making a piezoelectric element including a piezoelectric film formed on a substrate by a gas deposition technique includes the steps of ejecting ultra-fine particles of a piezoelectric material having a perovskite structure from an ejecting device toward the substrate, and applying an electric field to the ultra-fine particles traveling to the substrate. The substrate may be composed of a metal or a resin.

Abstract: A film forming apparatus that forms a film on an inner wall of a tubular body by a chemical vapor deposition method is provided. The film forming apparatus includes: a source material storage section; a process gas generation section that forms process gas containing source material supplied from the source material storage section; a film forming section that forms a film on an inner wall of the tubular body; a process gas supply tube that connects to the tubular body and supplies the process gas from the process gas generation section to the tubular body; and a process gas discharge tube that connects to the tubular body and discharges the process gas that has passed through the tubular body, wherein the film forming section includes a retaining section that holds the tubular body.

Abstract: The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses.

Abstract: The invention described and claimed herein relates to a chemical vapor deposition process for depositing a zinc oxide coating on a substrate by delivering two gaseous precursor streams to a surface of the substrate, and mixing the gaseous precursor streams at the substrate surface for a time sufficiently short so as to form a zinc oxide coating at a deposition rate greater than 5 nm/second.

Abstract: The thin film-forming material of the present invention comprises a bis(?-diketonato)zinc compound that is liquid at 25° C. and is suitable for forming a zinc-containing thin film. By using the thin film-forming material, a thin film can be produced with stable film-forming rate or stable film composition control without suffering from problems of raw material gas suppliability and in-line raw material transport. Preferred (?-diketonato)zinc compounds are bis(octane-2,4-dionato)zinc and bis(2,2dimethyl-6-ethyldecane-3,5-dionato) zinc.

Abstract: A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a segmented-flow method.

Abstract: An MOCVD process is provided for forming metal-containing films having the general formula M?xM?(1?x)MyOz, wherein M? is a metal selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Y, Sc, Yb, Lu, and Gd; M? is a metal selected from the group consisting of Mg, Ca, Sr, Ba, Pb, Zn, and Cd; M is a metal selected from the group consisting of Mn, Ce, V, Fe, Co, Nb, Ta, Cr, Mo, W, Zr, Hf and Ni; x has a value from 0 to 1; y has a value of 0, 1 or 2; and z has an integer value of 1 through 7. The MOCVD process uses precursors selected from alkoxide precursors, ?-diketonate precursors, and metal carbonyl precursors in combination to produce metal-containing films, including resistive memory materials.

Abstract: An anti-static, anti-reflection, transparent coating for a transpatent substrate, the coating including at least one electrically conductive layer, wherein the sheet resistance of the coating is less than about 1010 ohm/square. The coating is preferably higher transparent.

Abstract: The present invention relates to a method of growing a ZnO film using chemical vapour deposition (CVD), and to a ZnO film grown according to the method. The method includes providing a precursor in vapour form, the precursor substantially comprising Zn4O(O2CNRARB)6, where RA and RB are any combination of akyl or perfluoroalkyl groups, and decomposing at least some of the vapour at the surface of the substrate such that the film of zinc oxide forms. An advantage of using this precursor material is that, unlike in the prior art, no deliberate introduction of water vapour to improve christallographic orientation is required. Higher purities in oxide films are produced.

Abstract: The present invention provides a method for forming a thin film using a CVD process in which a large-scale vacuum exhaust unit or neutralization unit is not required, and a patterning step after the formation of the film is not required. A pattern formed of a monolayer is formed using (heptadecafluoro-1,1,2,2-tetrahydro)decyl-triethoxysilane on a surface to form a thin film of a second glass substrate. Droplets formed of trimethylaluminum are placed on a plurality of parts of an upper surface of a first substrate. The droplets are placed at the positions corresponding to openings of the monolayer pattern. Both substrates are placed in parallel with a predetermined distance therebetween, and the openings and the droplets are aligned with each other. While supplying nitrogen gas between the substrates, the second substrate is heated to 300° C. and retained for 5 minutes. Thereby, the droplets are vaporized and the gas is fed into the openings.

Abstract: Thin films are produced by a method wherein a material is heated in a furnace placed inside a vacuum system. An inert gas is flown over/through the heated material. The vapors of the material are entrained in the carrier gas which is then directed onto a substrate heated to a temperature below that of the furnace temperature and placed in close proximity to the exit of the furnace.

Abstract: Disclosed is a method for producing semiconductor fine particles comprising a step of preparing two or more solutions each containing at least one element selected from Group II to Group VI and feeding the solutions to an addition tank with mixing the two or more solutions fed to the addition tank by stirring to produce fine particles. In this production method, (1) flows of different rotational directions are formed by stirring the two or more solutions fed to the addition tank, and/or (2) a solvent is introduced into the addition tank beforehand, a mixing chamber having an opening is disposed below liquid surface of the solvent in the addition tank, and the two or more solutions are fed to the mixing chamber with controlling flow rates of the solutions. According to this production method, semiconductor fine particles having uniform grain sizes can be produced in a simple and convenient manner.

Abstract: Disclosed is a metal sulphide coating composition of the formula MXSiVRYSZFW where M is one or more metals selected from: Mo, Ti, W, Nb, Ta, Zr, and Hf; Si is silicon; R is one or more elements selected from: C, B, Al, V, Cr, Fe, Co, Ni, Sm, Au, Cu, Zn, Sn, Pb, N, H, and O; S is sulphur; F is fluorine; X is 0.2 to 1.5; V is 0.02 to 3; Y is 0 to 4; Z is 0.2 to 6; and W is 0.01 to 6, and in which X, Y, Z, V, and W are given in amounts by atomic ratio. The compositions show good non-stick properties, low hydrophilia, and high stability.

Abstract: A thin film comprising a pyrochlore represented by the formula: (Bi3xZn2−3x)(ZnxNb2−x)O7 wherein x is from about 0.45 to about 0.73 and an article comprising a substrate and, coated on the substrate, a thin film of the pyrochlore are provided. Also provided is a process for depositing on a substrate the above pyrochlore thin film. The process includes the steps of coating the substrate with a composition comprising bismuth carboxylate, zinc carboxylate, niobium alkoxide, an organic solvent, an organic acid and an organic base, heating to remove organic components and annealing at a temperature and for a length of time sufficient to produce the pyrochlore thin film on the substrate.