Inorganic Oxygen, Sulfur, Selenium, Or Tellurium (i.e., Chalcogen) Containing Coating (e.g., Phosphosilicate, Silicon Oxynitride, Etc.) Patents (Class 427/255.29)
  • Patent number: 9061317
    Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: June 23, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louis Vincent, Aaron Scott Lukas, Mary Kathryn Haas
  • Patent number: 9040121
    Abstract: Vacuum deposited thin films of material are described to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nanostructured features in a block copolymer film that can serve as lithographic patterns.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: May 26, 2015
    Assignee: Board of Regents The University of Texas System
    Inventors: C. Grant Willson, William Durand, Christopher John Ellison, Christopher Bates, Takehiro Seshimo, Julia Cushen, Logan Santos, Leon Dean, Erica Rausch
  • Patent number: 9023466
    Abstract: A cutting tool insert for machining by chip removal comprising a body of a hard alloy of cemented carbide, cermet, ceramics or cubic boron nitride based material onto which a hard and wear resistant coating is deposited by CVD, and the methods of making and using the same. The coating includes at least one ?-Al2O3 layer with a thickness between 0.5 ?m and 40 ?m having a {01-15} and/or {10-15} texture exhibiting excellent wear and metal cutting performance.
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: May 5, 2015
    Assignee: Seco Tools AB
    Inventors: Tommy Larsson, Mats Johansson
  • Patent number: 9023427
    Abstract: Atomic layer deposition of multi-component, preferably multi-component oxide, thin films. Provide herein is a method for depositing a multi-component oxide film by, for example, an ALD or PEALD process, wherein the process comprises at least two individual metal oxide deposition cycles. The method provided herein has particular advantages in producing multi-component oxide films having superior uniformity. A method is presented, for example, including depositing multi-component oxide films comprising components A?B?O by ALD comprising mixing two individual metal oxides deposition cycles A+O and B+O, wherein the subcycle order is selected in such way that as few as possible consecutive deposition subcycles for A+O or B+O are performed.
    Type: Grant
    Filed: May 16, 2012
    Date of Patent: May 5, 2015
    Assignee: ASM IP Holding B.V.
    Inventors: Raija Matero, Tom Blomberg
  • Publication number: 20150118395
    Abstract: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
    Type: Application
    Filed: December 31, 2014
    Publication date: April 30, 2015
    Inventors: Roy Gerald GORDON, Jill S. BECKER, Dennis HAUSMANN, Seigi SUH
  • Patent number: 9012024
    Abstract: The invention relates to a glazing comprising a transparent glass substrate containing ions of at least one alkali metal and a transparent layer made of silicon oxycarbide (SiOxCy) having a total thickness E with (a) a carbon-rich deep zone, extending from a depth P3 to a depth P4, where the C/Si atomic ratio is greater than or equal to 0.5, and (b) a carbon-poor surface zone, extending from a depth P1 to a depth P2, where the C/Si atomic ratio is less than or equal to 0.4, with P1<P2<P3<P4 and (P2?P1)+(P4?P3)<E the distance between P1 and P2 representing from 10% to 70% of the total thickness E of the silicon oxycarbide layer and the distance between P3 and P4 representing from 10% to 70% of the total thickness E of the silicon oxycarbide layer.
    Type: Grant
    Filed: November 14, 2012
    Date of Patent: April 21, 2015
    Assignee: Saint-Gobain Glass France
    Inventors: Claire Thoumazet, Martin Melcher, Arnaud Huignard, Raphael Lante
  • Patent number: 9005719
    Abstract: Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: April 14, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Xinjian Lei, Bing Han, Mark Leonard O'Neill, Ronald Martin Pearlstein, Richard Ho, Haripin Chandra, Agnes Derecskei-Kovacs
  • Patent number: 8962078
    Abstract: A method is provided for depositing a dielectric film on a substrate. According to one embodiment, the method includes providing the substrate in a process chamber, exposing the substrate to a gaseous precursor to form an adsorbed layer on the substrate, exposing the adsorbed layer to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combination thereof, to form the dielectric film on the substrate, generating a hydrogen halide gas in the process chamber by a decomposition reaction of a hydrogen halide precursor gas, and exposing the dielectric film to the hydrogen halide gas to remove contaminants from the dielectric film.
    Type: Grant
    Filed: June 22, 2012
    Date of Patent: February 24, 2015
    Assignee: Tokyo Electron Limited
    Inventor: Robert D. Clark
  • Publication number: 20150050479
    Abstract: The present invention provides, as gas barrier film having improved adhesiveness between a base material and a barrier laminate, a gas barrier film including a plastic film, an organic layer and an inorganic layer in this order, the gas barrier film having a silicon compound layer including one or more compounds selected from the group consisting of silicon oxide, silicon nitride and silicon carbide between the plastic film and the organic layer; the plastic film and the silicon compound layer, and the silicon compound layer and the organic layer being directly in contact to each other respectively; the thickness of the silicon compound layer being 40 nm or less; the organic layer being a layer formed of a composition containing a polymerizable compound and a silane coupling agent; and the thickness of the inorganic layer being larger than the thickness of the silicon compound layer.
    Type: Application
    Filed: September 26, 2014
    Publication date: February 19, 2015
    Applicant: FUJIFILM CORPORATION
    Inventors: Seigo NAKAMURA, Shinya SUZUKI
  • Patent number: 8956698
    Abstract: Systems and methods for depositing complex thin-film alloys on substrates are provided. In particular, systems and methods for the deposition of thin-film Cd1-xMxTe ternary alloys on substrates using a stacked-source sublimation system are provided, where M is a metal such as Mg, Zn, Mn, and Cu.
    Type: Grant
    Filed: April 7, 2014
    Date of Patent: February 17, 2015
    Assignee: Colorado State University Research Foundation
    Inventors: Walajabad S. Sampath, Pavel S. Kobyakov, Kevin E. Walters, Davis R. Hemenway
  • Patent number: 8945675
    Abstract: The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures.
    Type: Grant
    Filed: May 29, 2008
    Date of Patent: February 3, 2015
    Assignee: ASM International N.V.
    Inventors: Viljami Pore, Mikko Ritala, Markku Leskelä
  • Patent number: 8932674
    Abstract: Disclosed are precursors that are adapted to deposit SiCOH films with dielectric constant and Young's Modulus suitable for future generation dielectric films.
    Type: Grant
    Filed: February 17, 2011
    Date of Patent: January 13, 2015
    Assignee: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, François Doniat, Curtis Anderson, James J. F. McAndrew
  • Patent number: 8932676
    Abstract: Provided is a method for producing a gas barrier plastic molded body by forming a gas barrier thin film which is substantially colorless and has gas barrier properties, on the surface of a plastic molded body by a heating element CVD method using only raw material gases that are highly safe.
    Type: Grant
    Filed: December 28, 2011
    Date of Patent: January 13, 2015
    Assignee: Kirin Beer Kabushiki Kaisha
    Inventors: Masaki Nakaya, Midori Takiguchi, Mari Shimizu, Aiko Sato, Hiroyasu Tabuchi, Eitaro Matsui
  • Patent number: 8927060
    Abstract: There is provided a method for forming a Ge—Sb—Te film having a composition of Ge2Sb2Te5 on a substrate by a CVD method using a gaseous Ge source material, a gaseous Sb source material and a gaseous Te source material. The method includes loading the substrate within a processing chamber (Process 1); performing a first stage film forming process on the substrate by supplying the gaseous Ge source material and the gaseous Sb source material (Process 2); and performing a second stage film forming process on a film obtained through the first stage film forming process by supplying the gaseous Sb source material and the gaseous Te source material (Process 3). The Ge—Sb—Te film is formed by the film obtained through Process 2 and by a film obtained through Process 3.
    Type: Grant
    Filed: June 2, 2010
    Date of Patent: January 6, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Yumiko Kawano, Susumu Arima
  • Patent number: 8900663
    Abstract: Methods and systems for coating articles are described herein. The methods and systems described herein include, but are not limited to, steps for actively or passively controlling the temperature during the coating process, steps for providing intimate contact between the substrate and the support holding the substrate in order to maximize energy transfer, and/or steps for preparing gradient coatings. Methods for depositing high molecular weight polymeric coatings, end-capped polymer coatings, coatings covalently bonded to the substrate or one another, metallic coatings, and/or multilayer coatings are also disclosed. Deposition of coatings can be accelerated and/or improved by applying an electrical potential and/or through the use of inert gases.
    Type: Grant
    Filed: December 28, 2010
    Date of Patent: December 2, 2014
    Assignee: GVD Corporation
    Inventors: Erik S. Handy, Aleksander J. White, W. Shannan O'Shaughnessy, Hilton G. Pryce Lewis, Neeta P. Bansal, Karen K. Gleason
  • Publication number: 20140314654
    Abstract: Polycrystalline silicon rods produced by the Siemens process produce a higher yield of CZ crystals when the process parameters are modified in a second stage of deposition such that an outer layer of larger crystallites having a mean swize>20 ?m is produced. Harvesting of these polycrystalline rods and conventional rods by enclosing them in a plastic bag or sheath prior to removal from the reactor also surprisingly increase the yield of CZ crystals grown from a melt containing the sheathed rods.
    Type: Application
    Filed: December 12, 2012
    Publication date: October 23, 2014
    Inventors: Mikhail Sofin, Erich Dornberger, Reiner Pech
  • Publication number: 20140307030
    Abstract: An object is to provide a method of manufacturing a water repellent film, a nozzle plate, an inkjet head, and an inkjet recording device which are able to improve dynamic water repellency of a water repellent film which includes a straight-chain fluorine-based organic material. The method of manufacturing a water repellent film includes forming a first organic film on a silicon substrate with a silicon compound which does not include a fluorine atom as a raw material, forming an inorganic oxide film on the first organic film, and forming a second organic film on the inorganic oxide film with a straight-chain fluorine-containing silane coupling agent as a raw material.
    Type: Application
    Filed: February 4, 2014
    Publication date: October 16, 2014
    Applicant: FUJIFILM CORPORATION
    Inventor: Hiroki UCHIYAMA
  • Patent number: 8859040
    Abstract: A method of depositing a conformal coating on a porous non-ceramic substrate requires reactive gases to flow through the substrate so as to leave a conformal coating behind. The process can be used to leave a hydrophilic surface on the interior pores of the substrate, even when the substrate is of a naturally hydrophobic, e.g., olefinic material. The method can be used in a roll-to-roll process, or in a batch process. In some convenient embodiments of the latter case, the batch reactor and the conformally coated substrate or substrates can together go on to be come part of the end product, e.g., a filter body and the filter elements respectively.
    Type: Grant
    Filed: September 15, 2010
    Date of Patent: October 14, 2014
    Assignee: 3M Innovative Properties Company
    Inventor: Bill H. Dodge
  • Patent number: 8852686
    Abstract: In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.
    Type: Grant
    Filed: March 26, 2012
    Date of Patent: October 7, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byoung-jae Bae, Sung-lae Cho, Jin-il Lee, Hye-young Park, Do-hyung Kim
  • Publication number: 20140287249
    Abstract: The invention relates to a method for coating, by means of a chemical vapour deposition (CVD) technique, a part with a coating (PAO) for protecting against oxidation. The method enables the preparation of a refractory coating for protecting against oxidation, having a three-dimensional microstructure, which ensures the protection against oxidation at a high temperature, generally at a temperature above 1200° C., for materials that are sensitive to oxidation, such as composite materials, and in particular carbon/carbon composite materials.
    Type: Application
    Filed: November 23, 2012
    Publication date: September 25, 2014
    Inventors: Alexandre Allemand, Olivier Szwedek, Jean-Francois Epherre, Yann Le Petitcorps
  • Publication number: 20140272194
    Abstract: Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
    Type: Application
    Filed: May 30, 2014
    Publication date: September 18, 2014
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Manchao Xiao, Xinjian Lei, Bing Han, Mark Leonard O'Neill, Ronald Martin Pearlstein, Richard Ho, Haripin Chandra, Agnes Derecskei-Kovacs
  • Patent number: 8834968
    Abstract: In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: September 16, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byoung-Jae Bae, Sung-Lae Cho, Jin-Il Lee, Hye-Young Park, Do-Hyung Kim
  • Patent number: 8815751
    Abstract: There is provided a method of manufacturing a semiconductor device, including: forming a film containing a specific element, nitrogen, and carbon on a substrate, by alternately performing the following steps a specific number of times: a step of supplying a source gas containing the specific element and a halogen element, to the substrate; and a step of supplying a reactive gas composed of three elements of carbon, nitrogen, and hydrogen and having more number of a carbon atom than the number of a nitrogen atom in a composition formula thereof, to the substrate.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: August 26, 2014
    Assignees: Hitachi Kokusai Electric Inc., L'Air Liquide-Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventors: Yoshiro Hirose, Atsushi Sano, Kazutaka Yanagita, Katsuko Higashino
  • Patent number: 8802194
    Abstract: Methods and compositions for depositing a tellurium-containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium-containing precursor is provided and introduced into the reactor, which is maintained at a temperature ranging from approximately 20° C. to approximately 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.
    Type: Grant
    Filed: June 24, 2011
    Date of Patent: August 12, 2014
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Hana Ishii, Julien Gatineau
  • Patent number: 8765220
    Abstract: Disclosed are hafnium- or zirconium-containing compounds. The compounds may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. The hafnium- or zirconium-containing compounds include a ligand at least one aliphatic group as substituents selected to have greater degrees of freedom than the substituents disclosed in the prior art.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: July 1, 2014
    Assignee: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Vincent M. Omarjee, Venkateswara R. Pallem
  • Patent number: 8765221
    Abstract: A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si—OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si—OH groups have been formed through a CVD method.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: July 1, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Hidenori Miyoshi, Hitoshi Itoh, Hiroshi Sato
  • Patent number: 8759146
    Abstract: A method of forming a material comprises conducting an ALD layer cycle of a first metal, the ALD layer cycle comprising a reactive first metal precursor and a co-reactive first metal precursor. An ALD layer cycle of a second metal is conducted, the ALD layer cycle comprising a reactive second metal precursor and a co-reactive second metal precursor. An ALD layer cycle of a third metal is conducted, the ALD layer cycle comprising a reactive third metal precursor and a co-reactive third metal precursor. The ALD layer cycles of the first metal, the second metal, and the third metal are repeated to form a material, such as a GeSbTe material, having a desired stoichiometry. Additional methods of forming a material, such as a GeSbTe material, are disclosed, as is a method of forming a semiconductor device structure including a GeSbTe material.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: June 24, 2014
    Assignee: Micron Technology, Inc.
    Inventor: Eugene P. Marsh
  • Patent number: 8758515
    Abstract: A delivery device comprises an inlet port and an outlet port. The delivery device comprises an inlet chamber and an outlet chamber, with the outlet chamber being opposedly disposed to the inlet chamber and in fluid communication with the inlet chamber via a conical section. The outlet chamber comprises a labyrinth that is operative to prevent solid particles of a solid precursor compound contained in the delivery device from leaving the delivery device while at the same time permitting vapors of the solid precursor compound to leave the delivery device via the outlet port.
    Type: Grant
    Filed: August 9, 2010
    Date of Patent: June 24, 2014
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Egbert Woelk, Ronald L. DiCarlo
  • Patent number: 8728576
    Abstract: A method for manufacturing photocatalytically active titanium dioxide layers on substrate surfaces. The method reduces the effort for the manufacture of photocatalytically active titanium dioxide layers and increases the choice for the coating of suitable substrate materials. In the method, a titanium compound present in the gas phase and water vapor are directed to a preheated substrate by means of gas phase hydrolysis and a titanium dioxide layer is foamed on the surface of the substrate by chemical reaction. In this respect, the titanium compound and water vapor are supplied separately from one another so that a flow speed of at least 0.5 m/s is achieved and the time between the first contact of the two gases up to the impact on the surface of the substrate is kept lower than 0.05 s, and in this process the photocatalytically active titanium dioxide layer is formed on the substrate surface.
    Type: Grant
    Filed: October 9, 2009
    Date of Patent: May 20, 2014
    Assignee: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V.
    Inventors: Thomas Abendroth, Holger Althues, Stefan Kaskel, Ines Dani
  • Publication number: 20140116412
    Abstract: The invention relates to: a glazing substrate, characterised in that it is equipped with a layer consisting of crystallites of at least 25 nm in size, directly covered with a layer consisting of crystallites of at most 10 nm in size; its manufacturing process; and its application to a low-E glazing unit or in solar control.
    Type: Application
    Filed: March 30, 2012
    Publication date: May 1, 2014
    Applicant: SAINT GOBAIN GLASS FRANCE
    Inventors: Alexandre Popoff, Bernard Nghiem
  • Patent number: 8709863
    Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
    Type: Grant
    Filed: September 18, 2012
    Date of Patent: April 29, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
  • Patent number: 8709551
    Abstract: Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 ? as measured on a silicon substrate.
    Type: Grant
    Filed: December 16, 2010
    Date of Patent: April 29, 2014
    Assignee: Novellus Systems, Inc.
    Inventors: Keith Fox, Dong Niu, Joe Womack, Mandyam Sriram, George Andrew Antonelli, Bart van Schravendijk, Jennifer O'Loughlin
  • Patent number: 8680766
    Abstract: An organic EL element section (1000) is formed on a circuit formation section (102) formed on a circuit board (101). The organic EL element section (1000) is covered with a protective layer (113) including an SiNxOy film. The SiNxOy film has infrared absorption characteristics including: an Si—O—Si stretching vibration absorption peak appearing at energy lower than 1,000 cm?1; an absorption intensity of an Si—N stretching vibration absorption peak appearing in the vicinity of around 870 cm?1 which is 0.75 or more times an absorption intensity of the Si—O—Si stretching vibration absorption peak; and an absorption peak intensity in a range of 2,000 to 4,000 cm?1, which is 5% or less of the absorption intensity of the Si—N stretching vibration absorption peak. Thus, the protective film having an excellent moisture-blocking property may be obtained, and life property of an organic EL display device may be improved.
    Type: Grant
    Filed: November 5, 2008
    Date of Patent: March 25, 2014
    Assignees: Japan Display Inc., Panasonic Liquid Crystal Display Co., Ltd.
    Inventors: Eiji Matsuzaki, Yoshinori Ishii, Satoru Kase
  • Patent number: 8658247
    Abstract: A disclosed film deposition method comprises alternately repeating an adsorption step and a reaction step with an interval period therebetween. The adsorption step includes opening a first on-off valve of a source gas supplying system for a predetermined time period thereby to supply a source gas to a process chamber, closing the first valve after the predetermined time period elapses, and confining the source gas within the process tube, thereby allowing the source gas to be adsorbed on an object to be processed, while a third on-off valve of a vacuum evacuation system is closed. The reaction step includes opening a second on-off valve of a reaction gas supplying system thereby to supply a reaction gas to the process chamber, thereby allowing the source gas and the reaction gas to react with each other thereby to produce a thin film on the object to be processed.
    Type: Grant
    Filed: July 25, 2011
    Date of Patent: February 25, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Toshiyuki Ikeuchi, Pao-Hwa Chou, Kazuya Yamamoto, Kentaro Sera
  • Patent number: 8617652
    Abstract: Embodiments relate to depositing on one or more layers of materials on a fiber or fiber containing material using atomic layer deposition (ALD) to provide or enhance functionalities of the fibers or fiber containing material. A layer of material is deposited coated on the fibers or fiber containing textile by causing the relative movement between a fiber or the fiber containing textile and a source injector. The surface of the material is oxidized, nitrified or carbonized to increase the volume of the deposited material. By increasing the volume of the material, the material is subject to compressive stress. The compressive stress renders the fibers or the fiber containing material more rigid, stronger and more resistant against bending force, impact or tensile force.
    Type: Grant
    Filed: June 28, 2012
    Date of Patent: December 31, 2013
    Assignee: Veeco ALD Inc.
    Inventor: Sang In Lee
  • Publication number: 20130333835
    Abstract: Hybrid inorganic-organic, polymeric alloys are prepared by combining atomic layer deposition and molecular layer deposition techniques provide barrier protection against intrusion of atmospheric gases such as oxygen and water vapor. The alloy may be formed either directly on objects to be protected, or on a carrier substrate to form a barrier structure that subsequently may be employed to protect an object. The alloy thus formed is beneficially employed in constructing electronic devices such as photovoltaic cell arrays, organic light-emitting devices, and other optoelectronic devices.
    Type: Application
    Filed: June 14, 2012
    Publication date: December 19, 2013
    Applicant: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Peter Francis Carcia, Robert Scott Mclean
  • Patent number: 8603581
    Abstract: A layer of an n-type chalcogenide compositions including at least cadmium that is provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen. Such n-type chalcogenide compositions are particularly useful in the making of photovoltaic devices.
    Type: Grant
    Filed: October 26, 2010
    Date of Patent: December 10, 2013
    Assignee: Dow Global Technologies LLC
    Inventors: Todd R. Bryden, Buford I. Lemon, Joseph George, Rebekah Kristine-Ligman Feist
  • Publication number: 20130323423
    Abstract: Provided is a method for producing a gas barrier plastic molded body by forming a gas barrier thin film which is substantially colorless and has gas barrier properties, on the surface of a plastic molded body by a heating element CVD method using only raw material gases that are highly safe.
    Type: Application
    Filed: December 28, 2011
    Publication date: December 5, 2013
    Applicant: KIRIN BEER KABUSHIKI KAISHA
    Inventors: Masaki Nakaya, Midori Takiguchi, Mari Shimizu, Aiko Sato, Hiroyasu Tabuchi, Eitaro Matsui
  • Patent number: 8597732
    Abstract: A method comprising: supplying a gas whose water concentration has been controlled to become smaller than 1 PPB, whose oxygen partial pressure has been controlled to become lower than 10?21 atm by a water/oxygen molecule discharging apparatus into the interior of a reaction chamber and carrying out a dehydration/deoxidation process in the interior of said reaction chamber so as to control water vapor partial pressure to become lower than 10?10 atm; depositing a metal film on a substrate by supplying a carrier gas or a plasma excitation gas whose water concentration has been controlled to become smaller than 1 PPB, whose oxygen partial pressure has been controlled to become lower than 10?21 atm into the interior of said reaction chamber; forming an insulating film on the wafer by oxidizing the metal film in a low-oxygen atmosphere whose oxygen partial pressure has been controlled to become lower than 10?20 atm.
    Type: Grant
    Filed: March 14, 2008
    Date of Patent: December 3, 2013
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Naoki Shirakawa, Yoshiyuki Yoshida, Kazuhiko Endo, Tetsuya Mino
  • Patent number: 8586140
    Abstract: A film formation method for forming a metal oxide film includes loading a target object into a process container configured to maintain a vacuum therein; supplying a film formation source material into the process container; supplying an oxidizing agent into the process container; and causing the film formation source material and the oxidizing agent to react with each other, thereby forming a metal oxide film on the target object. The film formation source material is an organic metal compound containing a metal of the metal oxide film and prepared by mixing a first organic metal compound that is solid at room temperature and has a higher vapor pressure with a second organic metal compound that is liquid at room temperature such that the organic metal compound is liquid at room temperature.
    Type: Grant
    Filed: July 7, 2011
    Date of Patent: November 19, 2013
    Assignee: Tokyo Electron Limited
    Inventor: Haruhiko Furuya
  • Publication number: 20130280442
    Abstract: Methods for improving the adhesion of vacuum deposited coatings to a wide variety of substrates are described herein. The methods include utilizing a thermal source to generate free radical species which are then contacted to the substrate to be coated. Chemical vapor deposition, particularly initiated chemical vapor deposition (iCVD) can be used to form polymer thin films in situ without the need to remove the substrate from the chamber or even return to atmospheric pressure. Significant improvements in substrate adhesion of the subsequently deposited films have been observed over a range of substrate and coating materials.
    Type: Application
    Filed: April 3, 2013
    Publication date: October 24, 2013
    Inventors: Karen K. Gleason, James Samuel Peerless, W. Shannan O'Shaughnessy
  • Patent number: 8507039
    Abstract: The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses.
    Type: Grant
    Filed: January 28, 2009
    Date of Patent: August 13, 2013
    Assignee: ASM America, Inc.
    Inventors: Tuomo Suntola, Sven Lindfors
  • Patent number: 8486487
    Abstract: A gas barrier film comprising a resin substrate provided thereon at least one layer of a ceramic film, wherein the density ratio Y (=?f/?b) satisfies 1?Y?0.95 and the ceramic film has a residual stress being a compression stress of 0.01 MPa or more and 100 Mpa or less, wherein ?f is the density of the ceramic film and ?b is the density of a comparative ceramic film being formed by thermal oxidation or thermal nitridation of a metal as a mother material of the ceramic film so as to being the same composition ratio of the ceramic film.
    Type: Grant
    Filed: August 19, 2011
    Date of Patent: July 16, 2013
    Assignee: Konica Minolta Holdings, Inc.
    Inventors: Kazuhiro Fukuda, Chikao Mamiya, Hiroaki Arita
  • Publication number: 20130157062
    Abstract: Provision of a laminate excellent in weather resistance and gas barrier property and also excellent in adhesion between layers and its durability; and a process for producing such a laminate. A laminate which comprises a substrate sheet containing a fluororesin, and a gas barrier layer containing, as the main component, an inorganic compound composed of a metal and at least one member selected from the group consisting of oxygen, nitrogen and carbon, the gas barrier layer being directly laminated on at least one surface of the substrate sheet; wherein in a C1s spectrum of a surface of the substrate sheet on which the gas barrier layer is laminated, that is measured by X-ray photoelectron spectroscopy, the position of the highest peak present within a binding energy range of from 289 to 291 eV is present within a range of from 290.1 to 290.6 eV.
    Type: Application
    Filed: February 12, 2013
    Publication date: June 20, 2013
    Applicant: Asahi Glass Company, Limited
    Inventor: Asahi Glass Company, Limited
  • Patent number: 8455293
    Abstract: A method for processing solar cells comprising: providing a vertical furnace to receive an array of mutually spaced circular semiconductor wafers for integrated circuit processing; composing a process chamber loading configuration for solar cell substrates, wherein a size of the solar cell substrates that extends along a first surface to be processed is smaller than a corresponding size of the circular semiconductor wafers, such that multiple arrays of mutually spaced solar cell substrates can be accommodated in the process chamber, loading the solar cell substrates into the process chamber; subjecting the solar cell substrates to a process in the process chamber.
    Type: Grant
    Filed: November 6, 2012
    Date of Patent: June 4, 2013
    Assignee: ASM International N.V.
    Inventors: Chris G. M. de Ridder, Klaas P. Boonstra, Adriaan Garssen, Frank Huussen
  • Publication number: 20130118720
    Abstract: A heat exchanging element for a heat exchanger is provided with a coating that prevents, or at least reduces, the amount of contaminating materials to be abrade from the heat exchanger and into the heat exchange media. A method for producing a heat exchanging element for a heat exchanger, a heat exchanger per se, and a method for retrofitting an existing heat exchanger, provide for the occurrence of impurities caused by abrasion in one or more heat exchanging media and/or corrosion to be prevented or at least reduced by providing the coating.
    Type: Application
    Filed: December 31, 2012
    Publication date: May 16, 2013
    Applicant: SGL CARBON SE
    Inventor: SGL CARBON SE
  • Patent number: 8420170
    Abstract: Disclosed is a deposition process for forming a glass film. An embodiment comprising the steps of disposing a substrate in a chemical vapor deposition chamber and exposing the substrate surface to a SiO2 precursor gas, a carrier gas, and optionally a dopant gas in the presence of ozone and exposing the reaction volume of the gases above the substrate surface to a high intensity light source.
    Type: Grant
    Filed: July 26, 2010
    Date of Patent: April 16, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej S. Sandhu, Ravi Iyer
  • Publication number: 20130089673
    Abstract: Methods of making components having calcium magnesium aluminosilicate (CMAS) mitigation capability include providing a component, applying an environmental barrier coating to the component, where the environmental barrier coating includes a CMAS mitigation composition selected from the group consisting of zinc aluminate spinel, alkaline earth zirconates, alkaline earth hafnates, rare earth gallates, beryl, and combinations thereof.
    Type: Application
    Filed: November 30, 2012
    Publication date: April 11, 2013
    Applicant: GENERAL ELECTRIC COMPANY
    Inventor: General Electric Company
  • Patent number: 8377511
    Abstract: Disclosed are CVD deposition of SiN and SiON films using pentakis(dimethylamino)disilane compounds along with a nitrogen containing gas and optionally an oxygen containing gas.
    Type: Grant
    Filed: April 3, 2006
    Date of Patent: February 19, 2013
    Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventor: Christian Dussarrat
  • Patent number: RE45839
    Abstract: Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON.
    Type: Grant
    Filed: April 9, 2014
    Date of Patent: January 12, 2016
    Assignee: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
    Inventor: Christian Dussarrat