Titanium Compound Containing Coating (e.g., Titanium Carbonitride, Titanium Nitride, Etc.) Patents (Class 427/255.391)
  • Patent number: 9892913
    Abstract: A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: February 13, 2018
    Assignee: ASM IP Holding B.V.
    Inventors: Joe Margetis, John Tolle, Gregory Bartlett, Nupur Bhargava
  • Patent number: 9768171
    Abstract: A method of making a semiconductor device includes growing an interfacial layer on a substrate; depositing a first titanium nitride (TiN) layer on the interfacial layer; depositing a second TiN layer on the first TiN layer, the first TiN layer and the second TiN layer forming a bilayer work function gate stack of a first transistor; depositing a work function gate stack of a second transistor on the interfacial layer adjacent to the bilayer work function gate stack and on the bilayer work function stack; and depositing a gate electrode material on the work function gate stack of the second transistor.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: September 19, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ruqiang Bao, Siddarth A. Krishnan
  • Patent number: 9636750
    Abstract: The invention relates to a body, especially a cutting element, at least partially comprising a coating, whereby the coating is formed from one or more coating layers, whereby at least one coating layer comprises aluminum, titanium and nitrogen or is formed from these elements. According to the invention, the coating layer with aluminum, titanium and nitrogen at least partially comprises lamellae having a lamellar thickness of less than 100 nm, whereby the lamellae comprise successive sections having different phases. The invention further relates to a method for coating a body, especially a cutting element.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: May 2, 2017
    Assignee: BOEHLERIT GmbH & Co.KG.
    Inventors: Reinhard Pitonak, Arno Koepf, Ronald Weissenbacher
  • Patent number: 9613826
    Abstract: A semiconductor process for treating a metal gate includes the following steps. A metal gate including a main conductive material on a substrate is provided. A H2/N2 plasma treatment process is performed to reduce the main conductive material.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: April 4, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Cheng-Chi Tai, Chun-Ju Tao, Chung-Che Huang
  • Patent number: 9452478
    Abstract: A surface-coated cutting tool includes a body and a hard coating layer coating the cutting tool body. In the surface-coated cutting tool, the (Ti1-XAlX)(CYN1-Y) layer with a cubic crystal structure (X and Y are atomic ratio, and satisfy 0.60?X?0.90 and 0.0005?Y?0.005, respectively) is vapor-deposited on the body by a chemical vapor deposition method. The Al content XL is 0.55?XL?0.70, and the grain size DL is 0.1 ?m or less in the (Ti1-XAlX)(CYN1-Y) layer near the interface between the body and the complex carbonitride layer. The Al content XH 0.80?XH?0.95 and the average grain size DH is 0.5 ?m to 2 ?m in the (Ti1-XAlX)(CYN1-Y) layer near the outer surface side. Furthermore, the Al content ratio and the grain size in the (Ti1-XAlX)(CYN1-Y) layer gradually increase to the outer surface side.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: September 27, 2016
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Makoto Igarashi, Sho Tatsuoka, Naoyuki Iwasaki, Akira Osada
  • Patent number: 9230800
    Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: January 5, 2016
    Assignee: Novellus Systems, Inc.
    Inventors: Adrien LaVoie, Shankar Swaminathan, Hu Kang, Ramesh Chandrasekharan, Tom Dorsh, Dennis M. Hausmann, Jon Henri, Thomas Jewell, Ming Li, Bryan Schlief, Antonio Xavier, Thomas W. Mountsier, Bart J. van Schravendijk, Easwar Srinivasan, Mandyam Sriram
  • Patent number: 9085152
    Abstract: Piezoelectric material is shaped by plasma etching to form deep features with high aspect ratios, and desired geometries.
    Type: Grant
    Filed: May 12, 2009
    Date of Patent: July 21, 2015
    Assignee: FUJIFILM Corporation
    Inventors: Jeffrey Birkmeyer, Youming Li
  • Publication number: 20150110959
    Abstract: A film forming method includes: forming a thin unit film on a target substrate by supplying processing gases sequentially and intermittently into a processing space, where the target substrate is placed, in a processing chamber of a film forming apparatus while purging the processing gases with a purge gas constantly supplied into the processing space; and repeating the forming of the thin unit film to form a film having a predetermined thickness on the target substrate. A flow rate of the purge gas supplied into the processing space is set such that the film is formed in a film forming mode in which the thin unit film is formed, irrespective of a pressure in the processing chamber.
    Type: Application
    Filed: October 16, 2014
    Publication date: April 23, 2015
    Inventors: Hiroaki ASHIZAWA, Misuzu SATO
  • Patent number: 8956510
    Abstract: The present invention relates generally to methods for producing metallic products comprising a substrate and a metallic, external coating. In preferred embodiments, the metallic products are jewelry articles.
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: February 17, 2015
    Assignee: Frederick Goldman, Inc.
    Inventor: Andrew Derrig
  • Patent number: 8932437
    Abstract: The present invention relates generally to methods for producing a coated jewelry article or a coated component of a jewelry article, comprising a jewelry article or a component of a jewelry article, a first metallic coating, and a second metallic coating.
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: January 13, 2015
    Assignee: Frederick Goldman, Inc.
    Inventor: Andrew Derrig
  • Patent number: 8900665
    Abstract: Forming a hardmask layer with an increased etch resistance based on alternating nanolayers of TiN with alternating residual stresses is disclosed. Embodiments include depositing a first nanolayer of TiN, and depositing a second nanolayer of TiN on the first nanolayer, wherein the first and second nanolayers have different residual stresses.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: December 2, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventor: Robin Abraham Koshy
  • Publication number: 20140287199
    Abstract: In one aspect, cutting tools are described having coatings adhered thereto which, in some embodiments, can demonstrate desirable wear resistance and increased cutting lifetimes. A coated cutting tool, in some embodiments, comprises a substrate and a coating adhered to the substrate, the coating comprising a polycrystalline layer of TiZrAl2O3.
    Type: Application
    Filed: March 20, 2014
    Publication date: September 25, 2014
    Applicant: Kennametal Inc.
    Inventors: Zhenyu Liu, Peter Rudolf Leicht, Rodrigo Alejandro Cooper, Mark S. Greenfield, Yixiong Liu
  • Patent number: 8801817
    Abstract: A surface-coated cutting tool according to the present invention includes a base material and a coating film formed on the base material. The coating film includes at least one TiCN layer. The TiCN layer has a columnar crystal region. The columnar crystal region is characterized by having a composition of TiCxNy (in which 0.65?x/(x+y)?0.90) and having a (422) plane having a plane spacing of 0.8765 ? to 0.8790 ?.
    Type: Grant
    Filed: July 4, 2011
    Date of Patent: August 12, 2014
    Assignee: Sumitomo Electric Hardmetal Corp.
    Inventors: Anongsack Paseuth, Yoshio Okada, Hideaki Kanaoka, Chikako Kojima, Erika Iwai
  • Patent number: 8741428
    Abstract: A surface-coated cutting tool according to the present invention includes a base material and a coating film formed on the base material. The coating film includes at least one TiCN layer. The TiCN layer has a columnar crystal region. The columnar crystal region is characterized by having a composition of TiCxNy(in which 0.65?x/(x+y)?0.90), having a (422) plane having a plane spacing of 0.8765 ? to 0.8790 ? and having TC (220) showing a maximum value in an orientation index TC (hkl).
    Type: Grant
    Filed: July 4, 2011
    Date of Patent: June 3, 2014
    Assignee: Sumitomo Electric Hardmetal Corp.
    Inventors: Anongsack Paseuth, Yoshio Okada, Chikako Kojima, Hideaki Kanaoka, Erika Iwai, Hiroyuki Morimoto
  • Patent number: 8703245
    Abstract: A coated metal substrate has at least one layer of titanium based hard material alloyed with at least one alloying element selected from the list of chromium, vanadium and silicon. The total quantity of alloying elements is between 1% and 50% of the metal content, the layer having a general formula of: (Ti100-a-b-cCraVbSic)CxNyOz.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: April 22, 2014
    Assignees: Iscar, Ltd., Ionbond AG
    Inventors: Albir Layyous, Yehezkeal Landau, Hristo Strakov, Renato Bonetti
  • Patent number: 8652573
    Abstract: Method of depositing a film having a substantially uniform thickness by means of chemical vapor deposition, comprising: providing a reaction chamber; providing a substrate in said reaction chamber; subjecting the substrate to a series of deposition cycles, wherein each deposition cycle includes the steps of: (a) during a first time interval, supplying a first reactant to the reaction chamber; (b) during a second time interval, supplying a second reactant to the reaction chamber; and (c) during a third time interval, supplying neither the first nor the second reactant to the reaction chamber; wherein a start of the second time interval lies within the first time interval, such that a pre-exposure interval exists between a start of the first time interval and the start of the second time interval, during which pre-exposure interval the first reactant is supplied to the reaction chamber while the second reactant is not.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: February 18, 2014
    Assignee: ASM International N.V.
    Inventors: Maarten Stokhof, Hessel Sprey, Tatsuya Yoshimi, Bert Jongbloed, Noureddine Adjeroud
  • Patent number: 8642127
    Abstract: According to the method of forming a titanium nitride film, first, an inside of a reaction pipe accommodating a semiconductor wafer is heated up to 200° C. to 350° C. by using a temperature increasing heater. Then, the titanium nitride film is formed on the semiconductor wafer by supplying a film forming gas including a titanium raw material into the reaction pipe. Methylcyclopentadienyl tris(dimethylamino)titanium that does not include a chlorine atom and includes titanium is used as the titanium raw material.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: February 4, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Yuichiro Morozumi, Shingo Hishiya, Katsushige Harada
  • Patent number: 8617652
    Abstract: Embodiments relate to depositing on one or more layers of materials on a fiber or fiber containing material using atomic layer deposition (ALD) to provide or enhance functionalities of the fibers or fiber containing material. A layer of material is deposited coated on the fibers or fiber containing textile by causing the relative movement between a fiber or the fiber containing textile and a source injector. The surface of the material is oxidized, nitrified or carbonized to increase the volume of the deposited material. By increasing the volume of the material, the material is subject to compressive stress. The compressive stress renders the fibers or the fiber containing material more rigid, stronger and more resistant against bending force, impact or tensile force.
    Type: Grant
    Filed: June 28, 2012
    Date of Patent: December 31, 2013
    Assignee: Veeco ALD Inc.
    Inventor: Sang In Lee
  • Patent number: 8518486
    Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.
    Type: Grant
    Filed: May 12, 2010
    Date of Patent: August 27, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Nik Mirin, Tsai-Yu Huang, Vishwanath Bhat, Chris Carlson, Vassil Antonov
  • Patent number: 8512807
    Abstract: A method of making cutting tool inserts with high demands on dimensional accuracy includes: mixing by milling of powders forming hard constituents and binder phase, forming the powder mixture to bodies of desired shape, sintering the formed bodies, grinding with high accuracy the sintered bodies to inserts with desired shape and dimension, optionally edge rounding of cutting edges, and providing the ground inserts with a wear resistant non-diamond or non-diamond-like coating. According to the method, the ground inserts are heat treated prior to the coating operation in an inert atmosphere or vacuum or other protective atmosphere below the solidus of the binder phase for such a time that the micro structure of the surface region is restructured without causing significant dimensional changes. In this way inserts with unexpected improvement of tool life and dimensional accuracy have been achieved.
    Type: Grant
    Filed: December 9, 2009
    Date of Patent: August 20, 2013
    Assignee: Seco Tools AB
    Inventors: Bo Jansson, Jacob Sjolen
  • Publication number: 20130174982
    Abstract: The present disclosure provides for methods of fabricating a metal hard mask and a metal hard mask fabricated by such methods. A method includes flowing at least one metal reactant gas into a reaction chamber configured to perform chemical vapor deposition (CVD), wherein the at least one metal reactant gas includes a metal-halogen gas or a metal-organic gas. The method further includes depositing a hard mask metal layer by CVD using the at least one metal reactant gas.
    Type: Application
    Filed: January 5, 2012
    Publication date: July 11, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Su-Horng Lin, Lin-Jung Wu, Chi-Ming Yang, Chin-Hsiang Lin
  • Patent number: 8470401
    Abstract: The disclosure is directed to a process for depositing a group V metal containing film on a substrate by introducing a substrate into a reactor; preferably heating the substrate at a temperature above 150° C.; feeding a compound of the formula (Ia) or of the formula (Ib), or a mixture of said compounds thereof in the vapor phase into the reactor; optionally feeding a second compound of the formula (Ia) or of the formula (Ib), or a second mixture of said compounds thereof in vapor phase into the reactor; and thereby depositing the group V metal containing film onto said substrate.
    Type: Grant
    Filed: October 19, 2007
    Date of Patent: June 25, 2013
    Assignee: L'Air Liquide, Socété Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Nicolas Merle, Stéphane Danielle, Christian Dussarrat, Nicolas Blasco
  • Publication number: 20130115018
    Abstract: A coated metal substrate has at least one layer of titanium based hard material alloyed with at least one alloying element selected from the list of chromium, vanadium and silicon. The total quantity of alloying elements is between 1% and 50% of the metal content, the layer having a general formula of: (Ti100-a-b-cCraVbS ic)CxNyOz.
    Type: Application
    Filed: December 26, 2012
    Publication date: May 9, 2013
    Applicants: Ionbond AG Olten, Iscar, Ltd.
    Inventors: Iscar, Ltd., Ionbond AG Olten
  • Patent number: 8435886
    Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
    Type: Grant
    Filed: July 3, 2012
    Date of Patent: May 7, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Garo J. Derderian, Cem Basceri, Donald L. Westmoreland
  • Patent number: 8420208
    Abstract: A method of forming a high-k dielectric material including forming at least two portions of titanium dioxide, the at least two portions of titanium dioxide comprising a first portion comprising amorphous titanium dioxide and a second portion comprising rutile titanium dioxide. A method of forming a high-k dielectric material including forming a first portion of titanium dioxide at a temperature of from about 150° C. to about 350° C. and forming a second portion of titanium dioxide at a temperature of from about 350° C. to about 600° C. A high-k dielectric material is also disclosed.
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: April 16, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Tsai-Yu Huang, Ching-Kai Lin
  • Patent number: 8388709
    Abstract: A coated article, in particular a tool for cutting machining, has at least one titanium diboride layer which has been deposited by a thermal CVD process and has a thickness of at least 0.1 ?m. The titanium diboride layer has an extremely fine-grained microstructure with an average grain size of not more than 50 nm.
    Type: Grant
    Filed: December 4, 2008
    Date of Patent: March 5, 2013
    Assignee: Ceratizit Austria Gesellschaft GmbH
    Inventors: Wolfgang Wallgram, Uwe Schleinkofer, Karl Gigl, Josef Thurner
  • Publication number: 20130040258
    Abstract: The instant disclosure relates to an improved heating chamber of a heating device having a non-reactive surface layer. The heating chamber includes at least one metal layer and at least one non-reactive disposed thereon. The improved heating chamber is protected against reacting chemically during the thermal treatment process, and has better anti-corrosion capability. The heating chamber is also protected against cracking. Therefore, the service life of the heating chamber is extended. A heating device having improved heating chamber and at least one method of forming the non-reactive layer are also disclosed.
    Type: Application
    Filed: August 11, 2011
    Publication date: February 14, 2013
    Applicant: TANGTECK EQUIPMENT INC.
    Inventors: MING-HUI YU, A-TZU CHEN, CHANG-FA CHEN, WANG-TSUNG LIANG, LIANG-JAN CHANG
  • Patent number: 8367250
    Abstract: The invention concerns a device for storing electric power and method for assembling the device. The device includes an electrode layer and a collector layer associated with the electrode layer, a barrier layer made of metal nitride, the barrier layer being interposed between the electrode layer and the collector layer. The barrier layer is adapted to prevent diffusion of ions contained in an electrolyte up to the collector layer.
    Type: Grant
    Filed: September 15, 2006
    Date of Patent: February 5, 2013
    Assignee: Batscap
    Inventor: Jean-Michel Depond
  • Publication number: 20120308739
    Abstract: Disclosed are thermal and/or plasma-enhanced CVD, ALD, and/or pulse CVD processes to deposit alkaline earth metal fluoride-based films, such as MgF2, at temperatures ranging from about 25° C. to about 300° C., preferably from about 50° C. to about 250° C., and more preferably from about 100° C. to about 200° C.
    Type: Application
    Filed: May 17, 2012
    Publication date: December 6, 2012
    Applicant: L'Air Liquide Societe Anonyme pour I'Etude et I'Exploitation des Procedes Georges Claude
    Inventors: Clément LANSALOT-MATRAS, Julien Gatineau
  • Patent number: 8323738
    Abstract: Provided are a coated cutting tool having excellent wear resistance and excellent resistance to chipping as well as excellent fracture resistance such that the coated cutting tool is unlikely to cause backward movement of the tool edge position due to wear or chipping, and a method for producing the same. A coated cutting tool comprising a base material having a surface coated with a coating film, wherein the coating film comprises at least one layer comprised of a TiCN columnar crystal film, wherein the TiCN columnar crystal film has an average grain size of 0.05 to 0.5 ?m, as measured in the direction parallel to the surface of the base material, and exhibits an X-ray diffraction pattern having a peak at a diffraction angle 2? in the range of from 121.5 to 122.6° wherein the peak is ascribed to the (422) crystal facet of the TiCN columnar crystal as measured using CuK? radiation.
    Type: Grant
    Filed: February 8, 2011
    Date of Patent: December 4, 2012
    Assignee: Tungaloy Corporation
    Inventors: Jun Watanabe, Yohei Sone
  • Patent number: 8309175
    Abstract: A film forming method for producing a barrier film for a semiconductor. A metallic material gas and a reactive gas are alternatively introduced into a vacuum chamber. A back-flow preventing gas and an auxiliary gas are also introduced into the vacuum chamber. The reactive gas and the auxiliary gas are moved with a flow of the back-flow preventing gas, and radicals are produced by being in contact with a catalytic material. The metallic material gas is not in contact with the catalytic material, and the catalytic material is not degraded. A shower plate may be disposed between a radical producing chamber and a reaction chamber, so that the radicals are fed into the reaction chamber through holes.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: November 13, 2012
    Assignee: ULVAC, Inc.
    Inventor: Masamichi Harada
  • Patent number: 8293328
    Abstract: A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.
    Type: Grant
    Filed: September 7, 2006
    Date of Patent: October 23, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Ling Chen, Hua Chung, Barry L. Chin, Hong Zhang
  • Patent number: 8257790
    Abstract: A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.
    Type: Grant
    Filed: February 21, 2007
    Date of Patent: September 4, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Kensaku Narushima, Satoshi Wakabayashi, Kunihiro Tada
  • Patent number: 8252435
    Abstract: [PROBLEMS] To provide a cutting tool consisting of a hard material improved in the adherence between a substratum of cemented carbide having hard phases bound by a binder metal and a TiN layer superimposed on a surface of the substratum, and provide a process for producing the same. [MEANS FOR SOLVING PROBLEMS] There is provided a cutting tool consisting of a hard material, characterized in that the hard material has a substratum containing hard phases and a binder metal and a TiN layer superimposed on a surface of the substratum, and that the substratum has ?-phases consisting of at least one solid solution of carbide, nitride or carbonitride containing W and at least one member selected from among Ti, Ta, Nb and Zr, and that at least some of the ?-phases lie at a surface of the substratum, and that the TiN layer has crystals with the same orientation relationship as that of ?-phase crystals just above the ?-phases of the substratum surface.
    Type: Grant
    Filed: August 30, 2007
    Date of Patent: August 28, 2012
    Assignee: Kyocera Corporation
    Inventor: Takahito Tanibuchi
  • Publication number: 20120213945
    Abstract: Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.
    Type: Application
    Filed: February 15, 2012
    Publication date: August 23, 2012
    Applicant: SYNOS TECHNOLOGY, INC.
    Inventor: Sang In LEE
  • Patent number: 8221838
    Abstract: A method of making a coated body wherein the method includes the following sequential steps. First, providing a substrate Second, applying by chemical vapor deposition a titanium carbonitride coating layer that has a thickness equal to between about 0.5 micrometers and about 25 micrometers Third, applying by chemical vapor deposition a first titanium/aluminum-containing coating layer that has a thickness between a greater than zero micrometers and about 5 micrometers. Fourth, applying by chemical vapor deposition an alumina coating layer that has a thickness between greater than zero micrometers and about 5 micrometers. The first titanium-containing coating layer and the alumina coating layer makes up a coating sequence, and the method includes applying a plurality of the coating sequences by CVD.
    Type: Grant
    Filed: June 12, 2008
    Date of Patent: July 17, 2012
    Assignee: Kennametal Inc.
    Inventors: Alfred S. Gates, Jr., Charles G. McNerny, Pankaj K. Mehrotra, Peter R. Leicht
  • Patent number: 8216377
    Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: July 10, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Garo J. Derderian, Cem Basceri, Donald L. Westmoreland
  • Patent number: 8147786
    Abstract: A film-forming apparatus includes a processing chamber, and TiCl4 gas and NH3 gas are supplied into the processing chamber for forming a TiN film on a substrate W in the processing chamber by CVD. The processing chamber has a gas exhaust system. The gas exhaust system includes a gas exhaust pipe for exhausting the exhaust gas in the processing chamber a trap mechanism provided to the gas exhaust pipe for trapping a by-product in the exhaust gas, and a heated reaction gas supply mechanism for supplying a heated reaction gas into the exhaust gas. The heated reaction gas is adapted to react with a component in the exhaust gas to produce a by-product. Specifically, NH3 gas is supplied by the heated reaction gas supply mechanism as the heated reaction gas, and NH4Cl is produced as the by-product.
    Type: Grant
    Filed: October 19, 2011
    Date of Patent: April 3, 2012
    Assignee: Tokyo Electron Limited
    Inventor: Einosuke Tsuda
  • Patent number: 8142848
    Abstract: A coated cemented carbide insert is particularly useful for wet or dry milling steels at high cutting speeds, milling of hardened steels, and high feed copy milling of tool steels. The insert is formed by a cemented carbide body including WC, NbC and TaC, a W-alloyed Co binder phase, and a coating including an innermost layer of TiCxNyOz, with equiaxed grains, a layer of TiCxNyOz with columnar grains and a layer of ?-Al2O3.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: March 27, 2012
    Assignee: Seco Tools AB
    Inventors: Andreas Larsson, Anna Sandberg
  • Patent number: 8021717
    Abstract: A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.
    Type: Grant
    Filed: January 12, 2009
    Date of Patent: September 20, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Seishi Murakami, Masaki Koizumi, Hiroaki Ashizawa, Masato Koizumi
  • Patent number: 8012535
    Abstract: The invention relates to a method for producing a coated substrate body by chemical vapor deposition at least on one layer made of a carbonitride of a metal of IVa-Vla-groups of the periodic table, wherein a monocyclic hydrocarbon is used in the gas atmosphere during the deposition, in addition to a nitrile. According to the invention, the thus produced coated substrate body has a high degree of hardness and is used, preferably, in cutting operations where the cutting speeds are ?250 m/min.
    Type: Grant
    Filed: October 7, 2006
    Date of Patent: September 6, 2011
    Assignee: Kennametal Widia Produktions GmbH & Co KG
    Inventors: Volkmar Sottke, Doris Lenk, Hartmut Westphal, Hendrikus Van Den Berg
  • Publication number: 20110207283
    Abstract: Methods are provided herein for forming metal oxide thin films by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures such that the thin film is crystalline as deposited. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Application
    Filed: February 22, 2010
    Publication date: August 25, 2011
    Inventors: Suvi Haukka, Hannu Huotari, Marko Tuominen
  • Patent number: 7968218
    Abstract: A method for coating a tool or tool part, includes providing a base structure of the tool or the tool part at a temperature of 850° C. to 950° C. and applying at least one layer to the base structure. One or more layers of the at least one layer is formed of a metal carbonitride of composed of at least one of titanium, zirconium, hafnium, vanadium, niobium, tantalum and chromium. The one or more layers of the at least one layer is deposited by a deposition of a gas containing methane, nitrogen and at least one metal compound. After beginning the applying, the temperature is increased by at least 40° C. to an increased temperature and the deposition is continued for a time at the increased temperature.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: June 28, 2011
    Assignee: Boehlerit GmbH & Co. K.G.
    Inventors: Reinhard Pitonak, Jose Garcia, Ronald Weissenbacher, Klaus Ruetz-Udier
  • Patent number: 7927663
    Abstract: Wear resistance of the prior-art Ti(C,N) layers can be considerably enhanced by optimizing the grain size and microstructure. This invention describes a method to obtain controlled, fine, equiaxed grain morphology in Ti(C,N) layers produced using moderate temperature CVD (MTCVD). The method includes the step of doping using CO, CO2, ZrC14 and A1C13 or combinations of these to control the grain size and shape. Doping has to be controlled carefully in order to avoid nanograined structures and oxidization. Doping is further controlled to produce grain size that is from about 50 to about 300 nm, preferably from about 50 to about 150; a lack of any strong preferred growth orientation; and a length-to-width ratio (L/W) of less than 3 and only with a slight to moderate XRD line broadening.
    Type: Grant
    Filed: April 12, 2007
    Date of Patent: April 19, 2011
    Assignee: Seco Tools AB
    Inventor: Sakari Ruppi
  • Patent number: 7914849
    Abstract: A new and refined method to produce ?-Al2O3 layers in a temperature range of from about 750 to about 1000° C. with a controlled growth texture and substantially enhanced wear resistance and toughness than the prior art is disclosed. The ?-Al2O3 layer of the present invention is formed on a bonding layer of (Ti,Al)(C,O,N) with increasing aluminium content towards the outer surface. Nucleation of ?-Al2O3 is obtained through a nucleation step being composed of short pulses and purges consisting of Ti/Al-containing pulses and oxidising pulses. The ?-Al2O3 layer according to the present invention has a thickness ranging from about 1 to about 20 ?m and is composed of columnar grains. The length/width ratio of the alumina grains is from about 2 to about 12, preferably from about 4 to about 8. The layer is characterized by a strong (104) growth texture, measured using XRD, and by low intensity of (012), (110), (113), (024) and (116) diffraction peaks.
    Type: Grant
    Filed: August 22, 2008
    Date of Patent: March 29, 2011
    Assignee: Seco Tools AB
    Inventor: Sakari Ruppi
  • Publication number: 20110070371
    Abstract: Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.
    Type: Application
    Filed: September 17, 2010
    Publication date: March 24, 2011
    Applicants: Matheson Tri-Gas, Inc., Alliance for Sustainable Energy
    Inventors: Tim Gessert, Xiaonan Li, Teresa M. Barnes, Robert Torres, JR., Carrie L. Wyse
  • Patent number: 7892602
    Abstract: Methods for depositing a metal silicon nitride layer on a substrate during an atomic layer deposition (ALD) process. The methods provide positioning a substrate within a process chamber containing a centralized expanding channel that conically tapers towards and substantially covers the substrate, flowing a process gas into the centralized expanding channel to form a circular flow pattern, exposing the substrate to the process gas having the circular flow pattern, and exposing the substrate sequentially to chemical precursors during an ALD process to form a metal silicon nitride material. In one example, the ALD process provides sequentially pulsing a metal precursor, a nitrogen precursor, and a silicon precursor into the process gas having the circular flow pattern. The metal silicon nitride material may contain tantalum or titanium. In other examples, the process gas or the substrate may be exposed to a plasma.
    Type: Grant
    Filed: June 7, 2006
    Date of Patent: February 22, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Hua Chung, Ling Chen, Barry L. Chin
  • Patent number: 7867560
    Abstract: A method for performing a vapor deposition process is described. The vapor deposition process involves the deposition of a thin film, such as a ruthenium (Ru), rhenium (Re) or rhodium (Rh) film, on a substrate using a solid-phase or liquid-phase precursor. The method facilitates the initiation of gas lines to supply dilution gas(es), carrier gas(es) and precursor vapor to the deposition system, the pre-heating and heating of the substrate, the pre-conditioning of the film precursor vaporization system, and the flow stabilization of the carrier gas(es) and the precursor vapor, for example.
    Type: Grant
    Filed: March 28, 2007
    Date of Patent: January 11, 2011
    Assignee: Tokyo Electron Limited
    Inventor: Kenji Suzuki
  • Publication number: 20100227062
    Abstract: A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.
    Type: Application
    Filed: February 21, 2007
    Publication date: September 9, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kensaku Narushima, Satoshi Wakabayashi, Kunihiro Tada
  • Publication number: 20100226850
    Abstract: An even titanium oxide film is economically formed on the surface of a substrate. To actualize the film formation, an aqueous titanium tetrachloride solution containing 0.1 to 17% by weight of Ti is applied in a film-like state on the surface of a heat resistant substrate. While the liquid film state is kept as it is, the aqueous titanium tetrachloride solution is heated to 300° C. or more and H2O and HCl in the liquid film are accordingly evaporated to form a titanium oxide film. In the case where the substrate is of aluminum inferior in acid resistance, an acid-resistant film such as an oxide film is previously formed on the surface of the metal substrate.
    Type: Application
    Filed: January 19, 2007
    Publication date: September 9, 2010
    Applicant: Osaka Titanium Technologies C., Ltd
    Inventors: Tadashi Ogasawara, Shinji Shimosaki, Kazuomi Azuma, Masahiro Yoshihara