Abstract: Methods for depositing a metal silicon nitride layer on a substrate during an atomic layer deposition (ALD) process. The methods provide positioning a substrate within a process chamber containing a centralized expanding channel that conically tapers towards and substantially covers the substrate, flowing a process gas into the centralized expanding channel to form a circular flow pattern, exposing the substrate to the process gas having the circular flow pattern, and exposing the substrate sequentially to chemical precursors during an ALD process to form a metal silicon nitride material. In one example, the ALD process provides sequentially pulsing a metal precursor, a nitrogen precursor, and a silicon precursor into the process gas having the circular flow pattern. The metal silicon nitride material may contain tantalum or titanium. In other examples, the process gas or the substrate may be exposed to a plasma.

Abstract: A method for performing a vapor deposition process is described. The vapor deposition process involves the deposition of a thin film, such as a ruthenium (Ru), rhenium (Re) or rhodium (Rh) film, on a substrate using a solid-phase or liquid-phase precursor. The method facilitates the initiation of gas lines to supply dilution gas(es), carrier gas(es) and precursor vapor to the deposition system, the pre-heating and heating of the substrate, the pre-conditioning of the film precursor vaporization system, and the flow stabilization of the carrier gas(es) and the precursor vapor, for example.

Abstract: An even titanium oxide film is economically formed on the surface of a substrate. To actualize the film formation, an aqueous titanium tetrachloride solution containing 0.1 to 17% by weight of Ti is applied in a film-like state on the surface of a heat resistant substrate. While the liquid film state is kept as it is, the aqueous titanium tetrachloride solution is heated to 300° C. or more and H2O and HCl in the liquid film are accordingly evaporated to form a titanium oxide film. In the case where the substrate is of aluminum inferior in acid resistance, an acid-resistant film such as an oxide film is previously formed on the surface of the metal substrate.

Abstract: A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.

Abstract: A golden ornament includes a base material; a Ti coating film which is formed on a surface of the base material in an atmosphere of an inert gas other than nitrogen and whose Ti atom content is constant in the thickness direction; a TiN gradient coating film which is formed on the Ti coating film and whose N atom content has a gradient in the thickness direction; a TiN coating film which is formed on the TiN gradient coating film and whose contents of Ti atoms and N atoms are constant in the thickness direction; an Au—TiN mixture gradient coating film which is formed on the TiN coating film and whose Au atom content has a gradient in the thickness direction; and an Au—TiN mixture coating film which is formed on the Au—TiN mixture gradient coating film and whose contents of Au atoms, Ti atoms, and N atoms are constant in the thickness direction.

Abstract: In one embodiment, a method for depositing materials on a substrate is provided which includes forming a titanium nitride barrier layer on the substrate by sequentially exposing the substrate to a titanium precursor containing a titanium organic compound and a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. In another embodiment, the method includes exposing the substrate to the deposition gas containing the titanium organic compound to form a titanium-containing layer on the substrate, and exposing the titanium-containing layer disposed on the substrate to a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. The method further provides depositing a conductive material containing tungsten or copper over the substrate during a vapor deposition process. In some examples, the titanium organic compound may contain methylamido or ethylamido, such as tetrakis(dimethylamido)titanium, tetrakis(diethylamido)titanium, or derivatives thereof.

Abstract: A method of forming a coated body composed of small columnar crystals coated using the MTCVD process. Wear resistance of the prior-art Ti(C,N) layers can be considerably enhanced by optimising the grain size and microstructure. Considerably better wear resistance in, for example in many carbon steels, can be obtained by modifying the grain size and morphology of prior art MTCVD Ti(C,N) coatings. The method includes a step of doping by using CO, CO2, ZrCl4, HfCl4 and AlCl3 or combinations of these to ensure the control of the grain size and shape. Doping has to be controlled carefully in order to maintain the columnar structure and also in order to avoid nanograined structures and oxidisation. The preferred grain size should be in the sub-micron region with the grain width of from about 30 to about 300 nm. The length to width ratio should be more than 5, preferably more than 10 and the coating should exhibit a strong preferred growth orientation along 422 or 331. The XRD line broadening should be weak.

Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.

Abstract: Thermal atomic layer deposition processes are provided for growing low resistivity metal carbonitride thin films. Certain embodiments include methods for forming tantalum carbonitride (TaCN) thin films. In preferred embodiments, TaCN thin films with a resistivity of less than about 1000 ??·cm are grown from tantalum halide precursors and precursors that contribute both carbon and nitrogen to the growing film. Such precursors include, for example, hexamethyldisilazane (HMDS), tetramethyldisilazane (TMDS), bisdiethylaminosilane (BDEAS) and hexakis(ethylamino)disilane (HEADS).

Abstract: The present invention relates to a metal cutting tool insert with a coating comprising a metal oxide multilayer, which exhibits especially high resistance to plastic deformation as well as excellent resistance to flank and crater wear and high resistance to flaking, particular when used for machining of low carbon steel and stainless steel. The invention also relates to a method of making such a cutting tool insert.

Abstract: The invention relates to hard-coated bodies with a single- or multi-layer system containing at least one Ti1-xAlxN hard layer and a method for production thereof. The aim of the invention is to achieve a significantly improved wear resistance and oxidation resistance for such hard-coated bodies. Said hard-coated bodies are characterised in that the bodies are coated with at least one Ti1-xAlxN hard layer, generated by CVD without plasma stimulation present as a single-phase layer with cubic NaCl structure with a stoichiometric coefficient x>0.75 to x=0.93 and a lattice constant afcc between 0.412 nm and 0.405 nm, or as a multi-phase layer, the main phase being Ti1-xAlxN with a cubic NaCl structure with a stoichiometric coefficient x>0.75 to x=0.93 and a lattice constant afcc between 0.412 nm and 0.405 nm, with Ti1-xAlxN with a wurtzite structure and/or as TiNx with NaCl structure as further phase. Another feature of said hard layer is that the chlorine content is in the range of only 0.05 to 0.9 atom %.

Abstract: The present invention provides a process for producing an alumina coating comprised mainly of ? crystal structure on a base material.

Abstract: A cutting tool insert particularly for turning of steel comprising a body and a coating with a first (innermost) layer system of at least two layers of TiCxNyOz with x+y+z?1 with a total thickness of from about 0.7 to about 4.5 ?m, a second layer system to a large extent consisting of Al2O3 and an outermost layer system comprising one or several layers in sequence of TiCxNy (x+y?1) with individual thicknesses of greater than about 0.15 to about 0.8 ?m and a layer with Al2O3 with a thickness greater than about 0.1 to about 0.4 ?m with a total thickness of the outermost layer system thinner than about 2.5 ?m and a total thickness of the coating in the range of from about 2.0 to about 12.0 ?m.

Abstract: The present invention relates to a method for forming a metal silicon nitride film according to a cyclic film deposition under plasma atmosphere with a metal amide, a silicon precursor, and a nitrogen source gas as precursors. The deposition method for forming a metal silicon nitride film on a substrate comprises steps of: pulsing a metal amide precursor; purging away the unreacted metal amide; introducing nitrogen source gas into reaction chamber under plasma atmosphere; purging away the unreacted nitrogen source gas; pulsing a silicon precursor; purging away the unreacted silicon precursor; introducing nitrogen source gas into reaction chamber under plasma atmosphere; and purging away the unreacted nitrogen source gas.

Abstract: A coated metal substrate has at least one layer of titanium based hard material alloyed with at least one alloying element selected from the list of chromium, vanadium and silicon. The total quantity of alloying elements is between 1% and 50% of the metal content, the layer having a general formula of: (Ti100-a-b-cCraVbSic)CxNyOz.

Abstract: A cutting insert preferably for milling of extremely highly alloyed grey cast iron, of a substrate and a coating and methods of making and using the insert are disclosed. The cemented carbide substrate includes WC, of from about 3 to about 8 weight-% Co and less than about 0.5 weight-% carbides of metals from groups IVb, Vb or VIb of the periodic table. The coating has a first, innermost layer of TiCxNyOz with x+y+z=1, y>x and z less than about 0.2, preferably y greater than about 0.8, and z=0, with equiaxed grains with size less than about 0.5 ?m and a total thickness of from about 0.1 to about 1.5 ?m, a layer of TiCxNy with x+y=1, x greater than about 0.3 and y greater than about 0.3, preferably x greater than or equal to about 0.5, with a thickness of greater than about 3 to about 5 ?m with columnar grains with an average diameter of less than about 5 ?m, a layer of a smooth, fine-grained, grain size of from about 0.5 to about 2 ?m, ?-Al2O3 with a thickness of from about 0.

Abstract: The invention relates to a tool, especially a cutting tool, comprising a substrate member onto which at least one layer is deposited by means of CVD, and a method for the chemical vapor deposition of a two-phase layer on a sintered part. According to the invention, the single deposited layer or at least one of the layers is provided with a TiCN phase, TiOCN phase, TiOC phase, or TiC phase and an additional phase consisting of ZrO2 and/or HfO2. CH3CN, C5H5N, or C6H6 is used in the gas atmosphere for producing such a layer in addition to TiCl4, HfCl4, and/or ZrCl4 and CO2, the remainder being composed of H2 and/or Ar.

Abstract: The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

Abstract: Coated milling inserts particularly useful for milling of highly alloyed grey cast iron with or without cast skin under wet conditions at preferably rather high cutting speeds and milling of nodular cast iron and compacted graphite iron with or without cast skin under wet conditions at moderate cutting speeds are disclosed. The inserts are characterised by a WC—Co cemented carbide with a low content of cubic carbides and a highly W-alloyed binder phase and a coating including an inner layer of TiCxNy with columnar grains followed by a layer of ?-Al2O3 and a top layer of TiN.

Abstract: The precoat film forming method has the deposition step of feeding processing gas into the film forming device having the loading table structure 18 internally which has the loading table 16 for loading the article W to be processed and depositing the precoat film 22 composed of a TiN film on the surface of the loading table and the stabilization step of exposing and stabilizing the precoat film in NH3 (ammonia) containing gas by keeping the loading table at a temperature higher than the temperature at the deposition step. By doing this, the precoat film is stabilized, thereby even during a period of idling, there is no need to lower the temperature of the loading table and the throughput can be improved.

Abstract: Coated cemented carbide cutting tool inserts for bimetal machining under wet conditions at moderate cutting speeds, and in particular, cutting tool inserts for face milling of engine blocks formed from alloys of cast iron and aluminium and/or magnesium. The inserts are characterized by a submicron WC—Co cemented carbide and a coating including an inner layer of TiCxNy with columnar grains followed by a layer of ?-Al2O3 and a top layer of TiN.

Abstract: A new and improved cutting instrument is provided having an enhanced coating. The coating includes titanium, chromium, nitrogen and carbon elements and provides increased wear resistance. The coating can be applied to a variety of metal and non-metallic substrates, which include scissors and knife blades.

Abstract: Chemical vapor deposition methods of forming titanium suicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

Abstract: The present disclosure provides methods and apparatus that may be used to process microfeature workpieces, e.g., semiconductor wafers. Some aspects have particular utility in depositing TiN in a batch process. One implementation involves pretreating a surface of a process chamber by contemporaneously introducing first and second pretreatment precursors (e.g., TiCl4 and NH3) to deposit a pretreatment material on a the chamber surface. After the pretreatment, the first microfeature workpiece may be placed in the chamber and TiN may be deposited on the microfeature workpiece by alternately introducing quantities of first and second deposition precursors.

Abstract: Disclosed is a method of forming a titanium nitride film on a substrate through the reaction of titanium tetrachloride and ammonia while minimizing corrosion of the underlying layer. A first titanium nitride layer is formed on a substrate by reacting titanium tetrachloride and ammonia with each other in the supply-limited region while minimizing corrosion of the underlying layer. Thereafter, a second titanium nitride layer is formed on the first titanium nitride layer in the reaction-limited region while achieving good step coverage.

Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.

Abstract: Wear resistance of the prior-art Ti(C,N) layers can be considerably enhanced by optimising the grain size and microstructure. This invention describes a method to obtain controlled, fine, equiaxed grain morphology in Ti(C,N) layers produced using moderate temperature CVD (MTCVD). The control of the grain size and shape can be obtained by doping using CO, CO2, ZrCl4 and AlCl3 or combinations of these. Doping has to be controlled carefully in order to avoid nanograined structures and oxidisation. This kind of coatings shows new enhanced wear properties. The fine grain size together with equiaxed grain morphology enhances the toughness of the coating with at least maintained wear resistance, which can be seen especially in sticky steels like stainless steels. The optimum grain size is from 50 to about 300 nm, preferably from about 50 to about 150.

Abstract: A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a second reacting material including oxygen is introduced onto the substrate. A portion of the second reacting material is also chemisorbed onto the substrate, to form an atomic layer of a solid material on the substrate. The solid material may be used as a dielectric layer of the capacitor and/or a gate dielectric layer of the transistor.

Abstract: A process for the production of durable photocatalytically active self-cleaning coating on glass by contacting a hot glass surface with a fluid mixture of titanium chloride, a source of oxygen and a tin precursor. The coating preferably comprises less than 10 atom % tin in the bulk of the coating and preferably there is a greater atomic percent tin in the surface of the coating than there is in the bulk of the coating. Preferably, the coating is durable to abrasion and humidity cycling.

Abstract: Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer substantially free of ammonium chloride using reactant gases containing a titanium tetrachloride precursor and a ammonia precursor.

Abstract: Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

Abstract: Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

Abstract: Embodiments of the invention relate to an apparatus and method of cyclical layer deposition utilizing three or more precursors. In one embodiment, the method includes providing at least one cycle of precursors to form a ternary material layer. Providing at least one cycle of precursors includes introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor, wherein the pulses of two of the three precursors are introduced simultaneously or sequentially. In another embodiment, the method includes introducing a pulse of a first precursor, introducing a pulse of a second precursor, repeating the introduction of the first and the second precursors at least one time to form a binary material layer on the substrate surface, and introducing a pulse of a third precursor to form the ternary material layer.

Abstract: A coated article is provided which includes a layer including titanium oxycarbide. In order to form the coated article, a layer of titanium oxide is deposited on a substrate by sputtering or the like. After sputtering of the layer including titanium oxide, an ion beam source(s) is used to implant at least carbon ions into the titanium oxide. When implanting, the carbon ions have sufficient ion energy so as to knock off oxygen (O) from TiOx molecules so as to enable a substantially continuous layer comprising titanium oxycarbide to form near a surface of the previously sputtered layer.

Abstract: Methods and apparatus of forming titanium tantalum silicon nitride (TixTay(Si)Nz) layers are described. The titanium tantalum silicon nitride (TixTay(Si)Nz) layer may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor, a tantalum-containing precursor, a nitrogen-containing gas and a silicon-containing gas on a substrate. The titanium-containing precursor, the tantalum-containing precursor, the silicon-containing precursor and the nitrogen-containing precursor react to form the titanium tantalum silicon nitride (TixTay(Si)Nz) layer on the substrate. The formation of the titanium tantalum silicon nitride (TixTay(Si)Nz) layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the titanium tantalum silicon nitride (TixTay(Si)Nz) layer is used as a diffusion barrier for a copper metallization process.

Abstract: Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

Abstract: Integrated circuits are built layer by layer on a substrate. One technique for forming layers is chemical vapor deposition (CVD.). This technique injects gases through a gas-dispersion fixture into a chamber. The gases react and blanket a substrate in the chamber with a material layer. One way to promote uniform layer thickness is to coat the gas-dispersion fixture with a uniform layer of the material before using it for deposition on the substrate. However, known fixture-coating techniques yield uneven or poorly adherent coatings. Accordingly, the inventor devised new methods for coating these fixtures. One exemplary method heats a fixture to a temperature greater than its temperature during normal deposition and then passes one or more gases through the fixture to form a coating on it. The greater conditioning temperature improves evenness and adhesion of the fixture coating, which, in turn, produces higher quality layers in integrated circuits.

Abstract: The present invention is a process for enhancing the chemical vapor deposition of titanium nitride from a titanium containing precursor selected from the group consisting of tetrakis(dimethylamino)titanium, tetrakis(diethylamino)titanium and mixtures thereof, reacted with ammonia to produce the titanium nitride on a semiconductor substrate by the addition of organic amines, such as dipropylamine, in a range of approximately 10 parts per million by weight to 10% by weight, preferably 50 parts per million by weight to 1.0 percent by weight, most preferably 100 parts per million by weight to 5000 parts per million by weight to the titanium containing precursor wherein prior to the reaction, said titanium containing precursor is subjected to a purification process to remove hydrocarbon impurities from the titanium containing precursor.

Abstract: The invention relates to a method for the regeneration of a reactor and the use of said method for the improved performance of production processes for desired products.

Abstract: A method of forming a titanium silicide nitride (TiSiN) layer on a substrate id described. The titanium silicide nitride (TiSiN) layer is formed by providing a substrate to a process chamber and treating the substrate with a silicon-containing gas. A titanium nitride layer is formed on the treated substrate and exposed to a silicon-containing gas. The titanium nitride (TiN) layer reacts with the silicon-containing gas to form the titanium silicide nitride (TiSiN) layer. The formation of the titanium silicide nitride (TiSiN) layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the titanium silicide nitride (TiSiN) layer may be used as a diffusion barrier for a tungsten (W) metallization process.

Abstract: New and used parts of gas and steam turbine engines are protected by imparting a controlled residual compressive stress to given portions of the part and then coated by a CVD or PVD process at low temperatures with layers of TiN or alloys thereof at alternate selective hard and less hardened levels. The protective treatment is particularly efficacious for airfoils of compressor blades/vanes of gas turbine engines and airfoils of airfoils and certain components of steam turbine engines. This method is targeted to reduce erosion, corrosion and stress-corrosion cracking in these parts.

Abstract: A lanthanum complex of formula (I) having a low evaporation temperature can be used as a useful precursor for MOCVD of a BLT thin layer on semiconductor devices. wherein A is pentamethyldiethylenetriamine(PMDT) or triethoxytriethyleneamine(TETEA).

Abstract: A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is transported to a reaction chamber, and a film is deposited on the substrate using a cyclical deposition process, wherein the activated precursor gas and a reducing gas are alternately adsorbed on the substrate. Also provided is a method of depositing a film on a substrate using an activated reducing gas.

Abstract: A coated cutting tool that comprises a body containing a pocket. The tool further includes a polycrystalline cubic boron nitride blank that is brazed into the pocket using a braze alloy. The braze alloy has a liquidus temperature of at least about 900 degrees Centigrade. There is a coating applied to the cutting tool.

Abstract: The present invention generally relates to a method for depositing a metallic nitride series thin film, typically a TiN-series thin film. The TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, O and N to have a higher barrier characteristic than those of conventional TiN thin films, so that TiN-series thin film can suitably used as a barrier layer. In addition, a TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, N and P to have a lower resistance than those of conventional TiN films, so that TiN-series thin film can suitably used as a barrier layer or a capacitor top electrode. Moreover, if a TiN-series thin film containing Ti, O, N and P is formed by a CVD, the TiN-series thin film can have both of a high barrier characteristic and a low resistance characteristic.

Abstract: Integrated circuits are built layer by layer on a substrate. One technique for forming layers is chemical vapor deposition (CVD.). This technique injects gases through a gas-dispersion fixture into a chamber. The gases react and blanket a substrate in the chamber with a material layer. One way to promote uniform layer thickness is to coat the gas-dispersion fixture with a uniform layer of the material before using it for deposition on the substrate. However, known fixture-coating techniques yield uneven or poorly adherent coatings. Accordingly, the inventor devised new methods for coating these fixtures. One exemplary method heats a fixture to a temperature greater than its temperature during normal deposition and then passes one or more gases through the fixture to form a coating on it. The greater conditioning temperature improves evenness and adhesion of the fixture coating, which, in turn, produces higher quality layers in integrated circuits.

Abstract: After a processing chamber is used to deposit a refractory metal film on a substrate, the chamber is plasma-treated with a gas including either nitrogen and/or hydrogen and in-situ cleaned. By plasma-treating the chamber with a gas including nitrogen, the refractory metal film that forms on interior surfaces of the chamber during substrate processing is nitrided. The nitrided refractory metal film can be removed from the chamber during the in-situ cleaning. By plasma-treating the chamber with a gas including hydrogen, reaction by-products generated in the chamber is diluted removed. The chamber may be plasma-treated in a gas ambient including both nitrogen and hydrogen. Also, the plasma treatment may be performed before and after the in-situ cleaning.

Abstract: A method and apparatus for delivering precursors to a chemical vapor deposition or atomic layer deposition chamber is provided. The apparatus includes a temperature-controlled vessel containing a precursor. An energy source is used to vaporize the precursor at its surface such that substantially no thermal decomposition of the remaining precursor occurs. The energy source may include a carrier gas, a radio frequency coupling device, or an infrared irradiation source. After the precursor is exposed to the energy source, the vaporized portion of the precursor is transported via a temperature-controlled conduit to a chemical vapor deposition or atomic deposition chamber for further processing.

Abstract: A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.

Abstract: Methods of making a coated cemented carbide body include: forming a powder mixture having WC, 5-12 wt % Co, 3-11% cubic carbides of Ta and Ti with a ratio of Ta/Ti is 1.0-4.0; adding N in an amount of 0.6-2.0% of the weight of Ta and Ti; milling and spray-drying the mixture to form a powder; compacting and sintering the powder at a temperature of 1300-1500° C., in a controlled atmosphere of about 50 mbar followed by cooling, whereby a body having a binder phase enriched and essentially gamma-phase free surface zone of 5-50 ?m in thickness is obtained; applying a pre-coating treatment to the body; and appling a hard, wear-resistant coating to the body.