Nitrogen Containing Coating (e.g., Metal Nitride, Etc.) Patents (Class 427/255.394)
  • Patent number: 11015242
    Abstract: A hard coating comprising a lower layer formed by an fcc-based titanium aluminum nitride coating, and an upper layer formed by an aluminum nitride coating having an hcp crystal system, the upper layer having a columnar crystal structure, the columnar crystals having an average transverse cross section diameter of 0.05-0.6 ?m, and a ratio of an X-ray diffraction peak value Ia(002) of (002) planes to an X-ray diffraction peak value Ia(100) of (100) planes in the upper layer meeting the relation of Ia(002)/Ia(100)?6.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: May 25, 2021
    Assignee: Moldino Tool Engineering, Ltd.
    Inventors: Yuuzoh Fukunaga, Masayuki Imai
  • Patent number: 10811264
    Abstract: There is provided a film-forming method, including: a pre-coating process of supplying a first gas containing silicon into a processing container in which a substrate is not loaded, and coating surfaces of members installed inside the processing container, including a mounting table configured to mount the substrate thereon, with a film made of silicon; subsequently, a mounting process of mounting the substrate on the mounting table so that a back surface of the substrate is in contact with the film made of silicon; and subsequently, a film-forming process of supplying a second gas containing an organometallic compound into the processing container, and forming a film made of a metal constituting the organometallic compound on the substrate.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: October 20, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuichiro Wagatsuma, Miyako Kaneko, Naotaka Noro
  • Patent number: 10464959
    Abstract: Inherently selective precursors for deposition of second or third row transition metal (e.g., tungsten or ruthenium) thin films are described. In an example, a ligand framework for second or third row transition metal complex formation includes a lithium complex.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: November 5, 2019
    Assignee: Intel Corporation
    Inventor: Patricio E. Romero
  • Patent number: 10460987
    Abstract: The present disclosure provides a semiconductor package device, which includes a semiconductor die and a redistribution layer disposed over and electrically coupled to the semiconductor die. The redistribution layer includes a first conductive plate, a second conductive plate disposed over the first conductive plate, an insulating film between the first conductive plate and the second conductive plate, and a first dielectric material encapsulating the first conductive plate, the second conductive plate and the insulating film. The first conductive plate and the second conductive plate are configured as an antenna plane and a ground plane, respectively.
    Type: Grant
    Filed: May 9, 2017
    Date of Patent: October 29, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wen-Shiang Liao, Feng Wei Kuo, Chih-Hang Tung, Chen-Hua Yu
  • Patent number: 10400330
    Abstract: There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiH4 gas treatment with respect to the target substrate having the base film formed thereon by supplying an SiH4 gas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: September 3, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kenji Suzuki, Takanobu Hotta, Tomohisa Maruyama, Masayuki Nasu, Junya Miyahara, Koji Maekawa
  • Patent number: 10385450
    Abstract: A method and an apparatus for coating a substrate by subjecting a surface of the substrate to successive surface reactions of a first precursor and a second precursor in a reaction chamber. The method includes the steps of arranging the substrate to the substrate support in the reaction zone; supplying a predetermined amount of the first precursor to the reaction chamber for providing a flow of the first precursor to the reaction zone; supplying the second precursor for providing a flow of the second precursor through the reaction zone and discharging the second precursor from the reaction chamber, the second precursor being inactive to react with the first precursor; generating plasma discharge to the reaction zone for forming active precursor radicals from the second precursor supplied into the reaction zone, the active precursor radicals being active to react with the first precursor.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: August 20, 2019
    Assignee: BENEQ OY
    Inventors: Mikko Söderlund, Pekka Soininen, Paavo Timonen
  • Patent number: 10014468
    Abstract: Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to one or more barrier layers having various characteristics formed under and/or over and/or around correlated electron material.
    Type: Grant
    Filed: April 27, 2017
    Date of Patent: July 3, 2018
    Assignee: ARM Ltd.
    Inventors: Carlos Alberto Paz de Araujo, Kimberly Gay Reid, Lucian Shifren
  • Patent number: 9786671
    Abstract: Niobium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Niobium-containing films on one or more substrates via vapor deposition processes using the Niobium-containing film forming compositions.
    Type: Grant
    Filed: April 15, 2016
    Date of Patent: October 10, 2017
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Clément Lansalot-Matras, Wontae Noh
  • Patent number: 9748249
    Abstract: Tantalum-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Tantalum-containing films on one or more substrates via vapor deposition processes using the Tantalum-containing film forming composition.
    Type: Grant
    Filed: April 15, 2016
    Date of Patent: August 29, 2017
    Assignee: L'Air Liquide, Société Anonyme l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Clément Lansalot-Matras, Wontae Noh
  • Patent number: 9741558
    Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: August 22, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yihong Chen, Kelvin Chan, Shaunak Mukherjee, Abhijit Basu Mallick
  • Patent number: 9590112
    Abstract: An object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. In a transistor including an oxide semiconductor film, the oxide semiconductor film is subjected to dehydration or dehydrogenation performed by heat treatment. In addition, as a gate insulating film in contact with the oxide semiconductor film, an insulating film containing oxygen, preferably, a gate insulating film including a region containing oxygen with a higher proportion than the stoichiometric composition is used. Thus, oxygen is supplied from the gate insulating film to the oxide semiconductor film. Further, a metal oxide film is used as part of the gate insulating film, whereby reincorporation of an impurity such as hydrogen or water into the oxide semiconductor is suppressed.
    Type: Grant
    Filed: November 17, 2014
    Date of Patent: March 7, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 9478414
    Abstract: A method is for hydrophobization of a surface of a silicon-containing film by atomic layer deposition (ALD), wherein the surface is subjected to atmospheric exposure. The method includes: (i) providing a substrate with a silicon-containing film formed thereon; and (ii) forming on a surface of the silicon-containing film a hydrophobic atomic layer as a protective layer subjected to atmospheric exposure, by exposing the surface to a silicon-containing treating gas without exciting the gas. The treating gas is capable of being chemisorbed on the surface to form a hydrophobic atomic layer thereon.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: October 25, 2016
    Assignee: ASM IP Holding B.V.
    Inventors: Akiko Kobayashi, Akinori Nakano, Dai Ishikawa, Kiyohiro Matsushita
  • Patent number: 9305780
    Abstract: Methods for depositing silicon on a semiconductor or metallic surface include cycling dosing of silane and chlorosilane precursors at a temperature between 50° C. and 300° C., and continuing cycling between three and twenty three cycles until the deposition self-limits via termination of surface sites with Si—H groups. Methods of layer formation include depositing a chlorosilane onto a substrate to form a first layer, wherein the substrate is selected from the group consisting of InxGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge, wherein X is between 0.1 and 0.99. The methods may include pulsing a silane to form a silicon monolayer and cycling dosing of the chlorosilane and the silane. Layered compositions include a first layer selected from the group consisting of InxGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.
    Type: Grant
    Filed: December 5, 2014
    Date of Patent: April 5, 2016
    Assignees: APPLIED MATERIALS, INC., THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Mary Edmonds, Andrew C. Kummel, Atif M. Noori
  • Patent number: 9245743
    Abstract: Embodiments provided herein describe high-k dielectric layers and methods for forming high-k dielectric layers. A substrate is provided. The substrate includes a semiconductor material. The substrate is exposed to a hafnium precursor. The substrate is exposed to a zirconium precursor. The substrate is exposed to an oxidant only after the exposing of the substrate to the hafnium precursor and the exposing of the substrate to the zirconium precursor. The exposing of the substrate to the hafnium precursor, the exposing of the substrate to the zirconium precursor, and the exposing of the substrate to the oxidant causes a layer to be formed over the substrate. The layer includes hafnium, zirconium, and oxygen.
    Type: Grant
    Filed: December 17, 2013
    Date of Patent: January 26, 2016
    Assignee: Intermolecular, Inc.
    Inventors: Khaled Ahmed, Frank Greer
  • Publication number: 20150147484
    Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.
    Type: Application
    Filed: November 5, 2014
    Publication date: May 28, 2015
    Inventors: Victor Nguyen, Ning Li, Mihaela Balseanu, Li-Qun Xia, Mark Saly, David Thompson
  • Publication number: 20150148557
    Abstract: A material is deposited onto a substrate by exposing the substrate to a metal-containing precursor to adsorb metal atoms of the metal-containing precursor to the substrate. The substrate injected with the metal-containing precursor is exposed to an organic precursor to deposit a layer of material by a reaction of the organic precursor with the metal atoms adsorbed to the substrate. The substrate is exposed to radicals of a reducing agent to increase reactivity of the material deposited on the substrate. The radicals of the reducing agent are produced by applying a voltage differential with electrodes to a gas such as hydrogen. The substrate may be exposed to radicals before and/or after exposing the substrate to the organic precursor. The substrate may be sequentially exposed to two or more different organic precursors. The material deposited on the substrate may be a metalcone such as Alucone, Zincone, Zircone, Titanicone, or Nickelcone.
    Type: Application
    Filed: November 18, 2014
    Publication date: May 28, 2015
    Inventors: Sang In Lee, Chang Wan Hwang
  • Publication number: 20150118100
    Abstract: Methods are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising an amidoimino-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a co-reagent.
    Type: Application
    Filed: October 16, 2014
    Publication date: April 30, 2015
    Inventors: Jeffrey W. Anthis, David Thompson, Ravi Kanjolia, Shaun Garrett
  • Patent number: 9011973
    Abstract: Methods of depositing an oxygen deficient metal film by chemical reaction of at least one precursor having a predetermined oxygen deficiency on a substrate. An exemplary method includes, during a metal oxide deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an oxygen reactant gas comprising oxygen to form a layer containing a metal oxide on the substrate. During an oxygen deficient deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an additional reactant gas excluding oxygen to form a second layer at least one of a metal nitride and a mixed metal on the substrate during a second cycle, the second layer being oxygen deficient relative to the layer containing the metal oxide; and repeating the metal oxide deposition cycle and the oxygen deficient deposition cycle to form the oxygen deficient film having the predetermined oxygen deficiency.
    Type: Grant
    Filed: July 3, 2013
    Date of Patent: April 21, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Schubert Chu, Er-Xuan Ping, Yoshihide Senzaki
  • Patent number: 9005719
    Abstract: Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: April 14, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Xinjian Lei, Bing Han, Mark Leonard O'Neill, Ronald Martin Pearlstein, Richard Ho, Haripin Chandra, Agnes Derecskei-Kovacs
  • Patent number: 9005704
    Abstract: Cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics, L is a coordinating ligand comprising a Lewis base.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: April 14, 2015
    Assignee: Applied Materials, Inc.
    Inventors: David Thompson, Jeffrey W. Anthis, David Knapp, Benjamin Schmiege
  • Patent number: 8993072
    Abstract: Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: XmR1nHpSi(NR2R3)4-m-n-p??I wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.
    Type: Grant
    Filed: September 18, 2012
    Date of Patent: March 31, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Xinjian Lei, Mark Leonard O'Neill, Bing Han, Ronald Martin Pearlstein, Haripin Chandra, Heather Regina Bowen, Agnes Derecskei-Kovacs
  • Patent number: 8992684
    Abstract: The geometry of transition from cylindrical to rectangular shape through the conical part in hydride vapor phase epitaxial (HVPE) systems for deposition of III-nitride films is disclosed. It is used to ensure the laminar gas flow inside the growth zone of the system. For the velocity of flow within the atmospheric pressure reactor to be sufficient, the precursors are injected through the narrow diameter tubing injectors. The quartz reactor geometry is introduced to control the transition from jet to laminar flow.
    Type: Grant
    Filed: June 14, 2013
    Date of Patent: March 31, 2015
    Assignee: Ostendo Technologies, Inc.
    Inventors: Oleg Kovalenkov, Vitali Soukhoveev, Alexander Syrkin, Vladimir Sizov
  • Patent number: 8974868
    Abstract: A method for processing a substrate includes disposing the substrate in a deposition chamber configured to perform a deposition process and depositing a film on the substrate using the deposition process. The substrate having the film thereon is then transferred from the deposition chamber into a treatment chamber and a plasma cleaning process is performed on the substrate in the treatment chamber. Further processing of the substrate is performed after the plasma cleaning process.
    Type: Grant
    Filed: March 21, 2005
    Date of Patent: March 10, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Tadahiro Ishizaka, Audunn Ludviksson
  • Publication number: 20150064452
    Abstract: The invention relates to a body, especially a cutting element, at least partially comprising a coating, whereby the coating is formed from one or more coating layers, whereby at least one coating layer comprises aluminum, titanium and nitrogen or is formed from these elements. According to the invention, the coating layer with aluminum, titanium and nitrogen at least partially comprises lamellae having a lamellar thickness of less than 100 nm, whereby the lamellae comprise successive sections having different phases. The invention further relates to a method for coating a body, especially a cutting element.
    Type: Application
    Filed: December 28, 2012
    Publication date: March 5, 2015
    Inventors: Reinhard Pitonak, Arno Koepf, Ronald Weissenbacher
  • Publication number: 20150050480
    Abstract: The present invention provides, as gas barrier film having improved adhesiveness between a base material and a barrier laminate, a gas barrier film comprising a plastic film, an organic layer and an inorganic layer in this order, the gas barrier film having an aluminium compound layer containing one or more compounds selected from the group consisting of aluminium oxide, aluminium nitride and aluminium carbide between the plastic film and the organic layer; the plastic film and the aluminium compound layer, and the aluminium compound layer and the organic layer being directly in contact to each other respectively; the thickness of the aluminium compound layer being 40 nm or less; and the organic layer being a layer formed of a composition containing a polymerizable compound and a phosphate compound.
    Type: Application
    Filed: September 26, 2014
    Publication date: February 19, 2015
    Applicant: FUJIFILM CORPORATION
    Inventors: Shinya SUZUKI, Seigo NAKAMURA
  • Publication number: 20150050479
    Abstract: The present invention provides, as gas barrier film having improved adhesiveness between a base material and a barrier laminate, a gas barrier film including a plastic film, an organic layer and an inorganic layer in this order, the gas barrier film having a silicon compound layer including one or more compounds selected from the group consisting of silicon oxide, silicon nitride and silicon carbide between the plastic film and the organic layer; the plastic film and the silicon compound layer, and the silicon compound layer and the organic layer being directly in contact to each other respectively; the thickness of the silicon compound layer being 40 nm or less; the organic layer being a layer formed of a composition containing a polymerizable compound and a silane coupling agent; and the thickness of the inorganic layer being larger than the thickness of the silicon compound layer.
    Type: Application
    Filed: September 26, 2014
    Publication date: February 19, 2015
    Applicant: FUJIFILM CORPORATION
    Inventors: Seigo NAKAMURA, Shinya SUZUKI
  • Patent number: 8956513
    Abstract: There is provided a substrate processing method, in which a throughput can be improved even in case the time for recovery processing for restoring the state of a processing chamber is longer than the time for predetermined processing to be performed in the processing chamber. Substrates are alternately transferred to two processing chambers C, D, and the same film forming processing is performed on the substrates in the processing chambers C, D in parallel with each other. When the number of substrates processed in the processing chamber C has reached a predetermined number (11 substrates), dummy sputtering processing in the film forming chamber C is started and also 23rd-25th substrates of the first lot are transferred to the film forming chamber D to thereby perform film forming processing until the dummy sputtering processing is finished.
    Type: Grant
    Filed: July 15, 2010
    Date of Patent: February 17, 2015
    Assignee: Ulvac, Inc.
    Inventors: Shinya Nakamura, Yoshinori Fujii, Hideto Nagashima
  • Patent number: 8946692
    Abstract: Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by atomic layer deposition (ALD) onto a substrate. The subject BN(111) films can then be used to order carbon atoms into a graphene sheet during a carbon deposition process.
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: February 3, 2015
    Assignee: University of North Texas
    Inventor: Jeffry A Kelber
  • Patent number: 8932676
    Abstract: Provided is a method for producing a gas barrier plastic molded body by forming a gas barrier thin film which is substantially colorless and has gas barrier properties, on the surface of a plastic molded body by a heating element CVD method using only raw material gases that are highly safe.
    Type: Grant
    Filed: December 28, 2011
    Date of Patent: January 13, 2015
    Assignee: Kirin Beer Kabushiki Kaisha
    Inventors: Masaki Nakaya, Midori Takiguchi, Mari Shimizu, Aiko Sato, Hiroyasu Tabuchi, Eitaro Matsui
  • Patent number: 8932675
    Abstract: Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: January 13, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Arthur Kenneth Hochberg
  • Publication number: 20140363575
    Abstract: Methods and precursors are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising a diazabutadiene-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a tertiary amine.
    Type: Application
    Filed: June 5, 2014
    Publication date: December 11, 2014
    Inventors: David Thompson, Jeffrey W. Anthis
  • Patent number: 8900665
    Abstract: Forming a hardmask layer with an increased etch resistance based on alternating nanolayers of TiN with alternating residual stresses is disclosed. Embodiments include depositing a first nanolayer of TiN, and depositing a second nanolayer of TiN on the first nanolayer, wherein the first and second nanolayers have different residual stresses.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: December 2, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventor: Robin Abraham Koshy
  • Patent number: 8889566
    Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.
    Type: Grant
    Filed: November 5, 2012
    Date of Patent: November 18, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Amit Chatterjee, Abhijit Basu Mallick, Nitin K. Ingle, Brian Underwood, Kiran V. Thadani, Xiaolin Chen, Abhishek Dube, Jingmei Liang
  • Patent number: 8871304
    Abstract: The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein M represents a metal atom; R1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; R2 and R3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R2 and R3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound; Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); and n represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded; the metal compounds in which M is Mg (Magnesium) and R1 is methyl group are excluded; the metal compounds in which M i
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: October 28, 2014
    Assignee: Ube Industries, Ltd.
    Inventors: Osamu Fujimura, Hiroki Kanato, Masashi Shirai, Hiroshi Nihei
  • Publication number: 20140308083
    Abstract: A coated cutting tool includes a substrate and a surface coating, wherein the coating is a Ti(C,N,O) layer comprising at least one columnar fine-grained MTCVD Ti(C,N) layer with an average grain width of 0.05-0.4 ?m and an atomic ratio of carbon to the sum of carbon and nitrogen (C/(C+N)) contained in the MTCVD Ti(C,N) layer being on average 0.50-0.65. A method for manufacturing the coated cutting tool includes depositing the MTCVD Ti(C,N) layer.
    Type: Application
    Filed: December 14, 2012
    Publication date: October 16, 2014
    Applicant: SANDVIK INTELLECTUAL PROPERTY AB
    Inventor: Carl Bjormander
  • Patent number: 8853100
    Abstract: According to an embodiment of present disclosure, a film formation method is provided. The film formation method includes supplying a first process gas as a source gas for obtaining a reaction product to a substrate while rotating a turntable and revolving the substrate, and supplying a second process gas as a gas for nitriding the first process gas adsorbed to the substrate to the substrate in a position spaced apart along a circumferential direction of the turntable from a position where the first process gas is supplied to the substrate. Further, the film formation method includes providing a separation region along the circumferential direction of the turntable between a first process gas supply position and a second process gas supply position, and irradiating ultraviolet rays on a molecular layer of the reaction product formed on the substrate placed on the turntable to control stresses generated in a thin film.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: October 7, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Masanobu Igeta, Jun Sato, Kazuo Yabe, Hitoshi Kato, Yusaku Izawa
  • Patent number: 8852406
    Abstract: A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N2), and hydrogen (H2) is added to the reaction gas at a time after the deposition of a thin film occurs.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: October 7, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Young Joon Baik, Jong Keuk Park, Wook Seong Lee
  • Patent number: 8846148
    Abstract: A composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, R1 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; R2 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group.
    Type: Grant
    Filed: November 15, 2006
    Date of Patent: September 30, 2014
    Assignee: Nippon Shokubai Co., Ltd.
    Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda, Tetsuya Yamamoto, Yasutaka Nakatani, Takuya Kamiyama
  • Publication number: 20140287249
    Abstract: The invention relates to a method for coating, by means of a chemical vapour deposition (CVD) technique, a part with a coating (PAO) for protecting against oxidation. The method enables the preparation of a refractory coating for protecting against oxidation, having a three-dimensional microstructure, which ensures the protection against oxidation at a high temperature, generally at a temperature above 1200° C., for materials that are sensitive to oxidation, such as composite materials, and in particular carbon/carbon composite materials.
    Type: Application
    Filed: November 23, 2012
    Publication date: September 25, 2014
    Inventors: Alexandre Allemand, Olivier Szwedek, Jean-Francois Epherre, Yann Le Petitcorps
  • Publication number: 20140272194
    Abstract: Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
    Type: Application
    Filed: May 30, 2014
    Publication date: September 18, 2014
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Manchao Xiao, Xinjian Lei, Bing Han, Mark Leonard O'Neill, Ronald Martin Pearlstein, Richard Ho, Haripin Chandra, Agnes Derecskei-Kovacs
  • Publication number: 20140272344
    Abstract: An article includes a substrate and a coating provided on a surface of the substrate. The coating includes at least one metal silicide layer consisting essentially of MoSi2 or WSi2 or (Mo, W)Si2 or a platinum group metal silicide and at least one layer consisting essentially of Si3N4.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Julin Wan, Milivoj Konstantin Brun, Peter Joel Meschter, Reza Sarrafi-Nour, Don Mark Lipkin
  • Patent number: 8828492
    Abstract: A method for making a coated article wherein the method includes the following steps: providing a substrate; and depositing an aluminum oxynitride coating layer from a gaseous mixture. The gaseous mixture contains the following components: 30.0-65.0 volume percent nitrogen, 0.7-1.3 volume percent aluminum tri-chloride; 1.0-2.0 volume percent ammonia, 0.1-1.5 carbon dioxide, 1.5-4.5 volume percent hydrogen chloride, optional components of carbon monoxide and/or argon, and hydrogen as the balance.
    Type: Grant
    Filed: June 3, 2013
    Date of Patent: September 9, 2014
    Assignee: Kennametal Inc.
    Inventors: Volkmar Sottke, Hartmut Westphal, Hendrikus Van Den Berg, Zhigang Ban, Yixiong Liu, Mark S. Greenfield
  • Patent number: 8815751
    Abstract: There is provided a method of manufacturing a semiconductor device, including: forming a film containing a specific element, nitrogen, and carbon on a substrate, by alternately performing the following steps a specific number of times: a step of supplying a source gas containing the specific element and a halogen element, to the substrate; and a step of supplying a reactive gas composed of three elements of carbon, nitrogen, and hydrogen and having more number of a carbon atom than the number of a nitrogen atom in a composition formula thereof, to the substrate.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: August 26, 2014
    Assignees: Hitachi Kokusai Electric Inc., L'Air Liquide-Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventors: Yoshiro Hirose, Atsushi Sano, Kazutaka Yanagita, Katsuko Higashino
  • Patent number: 8815344
    Abstract: Method for selectively depositing an atomic layer deposition film on a substrate having two different surfaces are generally described. More specifically, methods for depositing TaN selectively onto one or more of a dielectric or metal versus the other of a dielectric of metal.
    Type: Grant
    Filed: March 14, 2012
    Date of Patent: August 26, 2014
    Assignee: Applied Materials, Inc.
    Inventor: Paul F. Ma
  • Publication number: 20140227444
    Abstract: A compound that is useful for forming a metal by reaction with a reducing agent is described by formula (I): wherein M is a metal selected from Groups 2 through 12 of the Periodic Table; and R1, R2, R3, and R4 are each independently H or C1-C8 alkyl.
    Type: Application
    Filed: February 13, 2013
    Publication date: August 14, 2014
    Applicant: Wayne State University
    Inventors: Charles H. Winter, Lakmal C. Kalutarage
  • Publication number: 20140199470
    Abstract: Provided are a polymer composition on a substrate and a surface modification method which is non-selective to substrate materials. Chemical vapor deposition polymerization is used to deposit a maleimide-functionalized poly-p-xylylene coating on a substrate. The substrate is readily available to perform a thiol-maleimide coupling reaction under mild conditions so as to modify the surface thereof. Furthermore, through a tailored thiol-terminal molecule, a designer surface can be created via thiol-maleimide coupling on a substrate, and the resulting surface can exhibit various desired biological functions for biotechnological applications. Therefore, this modification technique can be applied to biological fields extensively.
    Type: Application
    Filed: March 15, 2013
    Publication date: July 17, 2014
    Applicant: National Taiwan University
    Inventors: Hsien-Yeh Chen, Sheng-Tung Huang, Meng-Yu Tsai
  • Patent number: 8765222
    Abstract: The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B1 (0<B1) and supplying the gas containing magnesium at a flow rate C1 (0<C1) while supplying the Group III source gas at a flow rate A1 (0?A1); and a second step of supplying a Group V source gas at a flow rate B2 (0<B2) and supplying a gas containing magnesium at a flow rate C2 (0<C2) while supplying a Group III source gas at a flow rate A2 (0<A2). The first step and the second step are repeated a plurality of times to form a p-AlxGa1-xN (0?x<1) layer, and the flow rate A1 is a flow rate which allows no p-AlxGa1-xN layer to grow and satisfies A1?0.5 A2.
    Type: Grant
    Filed: December 10, 2010
    Date of Patent: July 1, 2014
    Assignee: Dowa Electronics Materials Co., Ltd.
    Inventors: Yoshikazu Ooshika, Tetsuya Matsuura
  • Patent number: 8748016
    Abstract: The invention relates to coated bodies made of metal, hard metal, cermet or ceramic material, coated with a single- or multi-layer coating system containing at least one hard material composite coating, and to a method for coating such bodies. The aim of the invention is to develop a coating system for such bodies, which is single- or multi-layered and comprises at least one hard material composite coating, which contains cubic TiAlCN and hexagonal AlN as the main phases and is characterized by a composite structure having a smooth, homogeneous surface, high oxidation resistance and high hardness. The aim includes the development of a method for cost-effectively producing such coatings. The hard material composite coating according to the invention contains cubic TiAlCN and hexagonal AlN as main phases, wherein the cubic TiAlCN is microcrystalline fcc-Ti1-xAlxCyNz where x>0.75, y=0 to 0.25 and z=0.75 to 1 having a crystallite size of ?=0.
    Type: Grant
    Filed: November 12, 2010
    Date of Patent: June 10, 2014
    Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
    Inventors: Ingolf Endler, Mandy Hoehn
  • Patent number: 8741800
    Abstract: A high surface area catalyst with a mesoporous support structure and a thin conformal coating over the surface of the support structure. The high surface area catalyst support is adapted for carrying out a reaction in a reaction environment where the thin conformal coating protects the support structure within the reaction environment. In various embodiments, the support structure is a mesoporous silica catalytic support and the thin conformal coating comprises a layer of metal oxide resistant to the reaction environment which may be a hydrothermal environment.
    Type: Grant
    Filed: July 22, 2010
    Date of Patent: June 3, 2014
    Assignee: UChicago Argonne, LLC
    Inventors: Jeffrey W. Elam, Christopher L. Marshall, Joseph A. Libera, James A. Dumesic, Yomaira J. Pagan-Torres
  • Patent number: 8741385
    Abstract: The present invention relates to the field of semiconductor processing and provides methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the method provides heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention provides radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.
    Type: Grant
    Filed: January 28, 2013
    Date of Patent: June 3, 2014
    Assignee: Soitec
    Inventors: Chantal Arena, Christiaan J. Werkhoven, Ronald Thomas Bertram, Jr., Ed Lindow