Nitrogen Containing Coating (e.g., Metal Nitride, Etc.) Patents (Class 427/255.394)
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Patent number: 8021723Abstract: A method for processing a substrate by plasma CVD includes: (i) forming a film on a substrate placed on a susceptor by applying RF power between the susceptor and a shower plate in the presence of a film-forming gas in a reactor; and (ii) upon completion of step (i), without unloading the substrate, applying amplitude-modulated RF power between the susceptor and the shower plate in the absence of a film-forming gas but in the presence of a non-film-forming gas to reduce a floating potential of the substrate.Type: GrantFiled: November 27, 2007Date of Patent: September 20, 2011Assignee: ASM Japan K.K.Inventors: Yasushi Fukasawa, Mitsutoshi Shuto, Yasuaki Suzuki
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Patent number: 8017182Abstract: Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is formed by flowing sequential and alternating pulses of mutually reactive reactants that deposit self-limitingly on a substrate. During the pulsed CVD part of the process, another layer is deposited by flowing two CVD reactants into a reaction chamber, with at least a first of the CVD reactants flowed into the reaction chamber in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. The ALD and CVD parts of the process ca be used to deposit layers with different compositions, thereby forming, e.g., nanolaminate films. Preferably, high quality layers are formed by flowing the second CVD reactant into the reaction chamber for a longer total duration than the first CVD reactant.Type: GrantFiled: June 21, 2007Date of Patent: September 13, 2011Assignee: ASM International N.V.Inventors: Menso Hendriks, Martin Knapp, Suvi Haukka
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Patent number: 8012535Abstract: The invention relates to a method for producing a coated substrate body by chemical vapor deposition at least on one layer made of a carbonitride of a metal of IVa-Vla-groups of the periodic table, wherein a monocyclic hydrocarbon is used in the gas atmosphere during the deposition, in addition to a nitrile. According to the invention, the thus produced coated substrate body has a high degree of hardness and is used, preferably, in cutting operations where the cutting speeds are ?250 m/min.Type: GrantFiled: October 7, 2006Date of Patent: September 6, 2011Assignee: Kennametal Widia Produktions GmbH & Co KGInventors: Volkmar Sottke, Doris Lenk, Hartmut Westphal, Hendrikus Van Den Berg
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Patent number: 8003164Abstract: A method of making a scratch resistant coated article which is also resistant to attacks by at least some fluorine-inclusive etchant(s) for at least a period of time is provided. In certain example embodiments, an anti-etch layer(s) is provided on a glass substrate in order to protect the glass substrate from attacks by fluorine-inclusive etchant(s), a scratch resistant layer of or including DLC is provided over the anti-layer(s), and a seed layer is provided between the anti-layer(s) and the scratch resistant layer so as to facilitate the adhesion of the scratch resistant layer while also helping to protect the anti-layer(s). Optionally, a base layer(s) or underlayer(s) may be provided under at least the anti-etch layer(s).Type: GrantFiled: September 19, 2008Date of Patent: August 23, 2011Assignee: Guardian Industries Corp.Inventors: Rudolph Hugo Petrmichl, Michael P. Remington, Jr., Jose Nunez-Regueiro, Maxi Frati, Greg Fisher
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Patent number: 7993705Abstract: A method for using a film formation apparatus includes performing film formation of a product film selected from the group consisting of a silicon nitride film and a silicon oxynitride film on a target substrate within a reaction chamber of the film formation apparatus; and unloading the target substrate from the reaction chamber. Thereafter, the method includes first heating an inner surface of the reaction chamber at a post process temperature while supplying a post process gas for nitridation into the reaction chamber, thereby performing nitridation of a by-product film deposited on the inner surface of the reaction chamber; then rapidly cooling the inner surface of the reaction chamber, thereby cracking the by-product film by a thermal stress; and then forcibly exhausting gas from inside the reaction chamber to carry the by-product film, thus peeled off from the inner surface.Type: GrantFiled: June 27, 2007Date of Patent: August 9, 2011Assignee: Tokyo Electron LimitedInventors: Nobutake Nodera, Kazuhide Hasebe, Kazuya Yamamoto
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Patent number: 7985449Abstract: A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.Type: GrantFiled: April 20, 2007Date of Patent: July 26, 2011Assignee: Air Products and Chemicals, Inc.Inventors: Diwakar Garg, Hansong Cheng, John Anthony Thomas Norman, Eduardo Machado, Pablo Ordejon
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Publication number: 20110171384Abstract: A first substrate 16 has a source material forming surface on which a plurality of source materials for forming a polymerized film is formed in a predetermined pattern, and a second substrate 15 has a film forming surface on which the polymerized film will be formed. Here, the first substrate 16 and the second substrate 15 are installed in a processing chamber 2 such that the source material forming surface and the film forming surface face each other. Then, the inside of the processing chamber 2 is maintained under a vacuum atmosphere, and the first substrate 16 is heated to a first temperature at which the source materials on the source material forming surface are evaporated and the second substrate 15 is heated to a second temperature at which the source materials cause polymerization reaction on the film forming surface.Type: ApplicationFiled: July 17, 2009Publication date: July 14, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Yumiko Kawano, Yusaku Kashiwagi
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Publication number: 20110165346Abstract: Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.Type: ApplicationFiled: March 18, 2011Publication date: July 7, 2011Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Manchao Xiao, Arthur Kenneth Hochberg
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Patent number: 7973189Abstract: An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or tantalum nitride, that serves as a diffusion barrier for copper and also increases the adhesion between the cobalt nitride and the underlying insulator. The cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on the cobalt nitride show high electrical conductivity and can serve as seed layers for electrochemical deposition of copper conductors for microelectronics.Type: GrantFiled: April 9, 2008Date of Patent: July 5, 2011Assignee: President and Fellows of Harvard CollegeInventors: Roy Gerald Gordon, Hoon Kim, Harish Bhandari
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Publication number: 20110159188Abstract: A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.Type: ApplicationFiled: December 20, 2010Publication date: June 30, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Hitoshi Kato, Kohichi Orito, Hiroyuki Kikuchi, Muneyuki Otani, Takeshi Kumagai, Kensaku Narushima, Takashi Nishimori
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Patent number: 7968147Abstract: The present invention relates to ceramic cutting tools, such as, an aluminum oxide with zirconium oxide ceramic cutting tool with diffusion bonding enhanced layer and CVD coatings, particularly useful for machining modern metal materials. The method comprises a chemical reaction with a mixture including nitrogen and aluminum chloride introduced to form a diffusion bonding enhanced layer between the ceramic substrate and the CVD coatings. Thus formed diffusion bonding enhanced layer is highly adherent to the aluminum oxide with zirconium oxide ceramic substrate and significantly enhances the CVD coating properties, thus improving the machining performance in terms of the tool life of zirconium-based aluminum oxide with zirconium oxide ceramic cutting tools.Type: GrantFiled: March 13, 2009Date of Patent: June 28, 2011Assignee: TDY Industries, Inc.Inventors: X. Daniel Fang, David J. Wills, Gilles Festeau
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Patent number: 7959987Abstract: A method and apparatus for depositing a material layer to treat and condition a substrate, such as a fuel cell part, is described. The method includes depositing a hydrophilic material layer on a portion of the surface of the substrate in a process chamber from a mixture of precursors of the hydrophilic material layer. In addition, the method includes reducing a fluid contact angle of the substrate surface. The hydrophilic material layer comprises a wet etch rate of less than about 0.03 ?/min in the presence of about 10 ppm of hydrofluoric acid in water. The material layer can be used to condition various parts of a fuel cell useful in applications to generate electricity.Type: GrantFiled: November 30, 2005Date of Patent: June 14, 2011Assignee: Applied Materials, Inc.Inventors: Tae Kyung Won, Robert Bachrach, John M. White, Wendell T. Blonigan
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Publication number: 20110135822Abstract: Provided are a coated cutting tool having excellent wear resistance and excellent resistance to chipping as well as excellent fracture resistance such that the coated cutting tool is unlikely to cause backward movement of the tool edge position due to wear or chipping, and a method for producing the same. A coated cutting tool comprising a base material having a surface coated with a coating film, wherein the coating film comprises at least one layer comprised of a TiCN columnar crystal film, wherein the TiCN columnar crystal film has an average grain size of 0.05 to 0.5 ?m, as measured in the direction parallel to the surface of the base material, and exhibits an X-ray diffraction pattern having a peak at a diffraction angle 2? in the range of from 121.5 to 122.6° wherein the peak is ascribed to the (422) crystal facet of the TiCN columnar crystal as measured using CuK? radiation.Type: ApplicationFiled: February 8, 2011Publication date: June 9, 2011Inventors: Jun Watanabe, Yohei Sone
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Patent number: 7955651Abstract: A refined method to produce textured ?-Al2O3 layers in a temperature range of 750-1000° C. with a controlled texture and substantially enhanced wear resistance and toughness than the prior art is disclosed. The ?-Al2O3 layer is formed on a bonding layer of (Ti,Al)(C,O,N) with increasing aluminum content towards the outer surface. Nucleation of ?-Al2O3 is obtained through a nucleation step composed of short pulses and purges of Ti-containing and oxidizing steps. The ?-Al2O3 layer has a thickness ranging from 1 to 20 ?m and is composed of columnar grains. The length/width ratio of the alumina grains is from 2 to 15, preferably 6 to 10. The layer is characterized by a strong (110) growth texture, measured using XRD, and by the low intensity of (012), (104), (113), (024) and (116) diffraction peaks.Type: GrantFiled: August 8, 2008Date of Patent: June 7, 2011Assignee: Seco Tools ABInventor: Sakari Ruppi
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Publication number: 20110117276Abstract: This invention relates to erosion resistant coatings comprising at least 2 sublayer systems in which each sublayer system is separated from another by an interlayer, wherein (i) each sublayer system is the same or different and comprises at least 4 layers, (ii) said layers comprise alternating layers of a nitride-containing compound of stoichiometric composition and a nitride-containing compound of nonstoichiometric composition, (iii) each sublayer system has a thickness of greater than about 0.4 microns, and (iv) each interlayer is the same or different and comprises a metal-containing compound. This invention also relates to a method for producing the coatings and to articles, e.g., gas turbine compressor rotor blade and stator vanes, coated with the coatings.Type: ApplicationFiled: January 25, 2011Publication date: May 19, 2011Inventors: Albert Feuerstein, Thomas Albert
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Patent number: 7935382Abstract: A method of making a metal nitride is provided. The method may include introducing a metal in a chamber. A nitrogen-containing material may be flowed into the chamber. Further, a hydrogen halide may be introduced. The nitrogen-containing material may react with the metal in the chamber to form the metal nitride.Type: GrantFiled: December 20, 2005Date of Patent: May 3, 2011Assignee: Momentive Performance Materials, Inc.Inventors: Dong-Sil Park, Mark Philip D'Evelyn, Myles Standish Peterson, II, John Thomas Leman, Joell Randolph Hibshman, II, Fred Sharifi
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Patent number: 7935384Abstract: The present invention relates to a method of forming a metal-nitride film onto a surface of an object to be processed in a processing container in which a vacuum can be created. The method of the invention includes: a step of continuously supplying an inert gas into a processing container set at a low film-forming temperature; and a step of intermittently supplying a metal-source gas into the processing container, during the step of continuously supplying the inert gas. During the step of intermittently supplying the metal-source gas, a nitrogen-including reduction gas is supplied into the processing container at the same time that the metal-source gas is supplied, during a supply term of the metal-source gas. The nitrogen-including reduction gas is also supplied into the processing container for a term shorter than a non-supply term of the metal-source gas, during the non-supply term of the metal-source gas.Type: GrantFiled: September 2, 2002Date of Patent: May 3, 2011Assignee: Tokyo Electron LimitedInventor: Toshio Hasegawa
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Patent number: 7927663Abstract: Wear resistance of the prior-art Ti(C,N) layers can be considerably enhanced by optimizing the grain size and microstructure. This invention describes a method to obtain controlled, fine, equiaxed grain morphology in Ti(C,N) layers produced using moderate temperature CVD (MTCVD). The method includes the step of doping using CO, CO2, ZrC14 and A1C13 or combinations of these to control the grain size and shape. Doping has to be controlled carefully in order to avoid nanograined structures and oxidization. Doping is further controlled to produce grain size that is from about 50 to about 300 nm, preferably from about 50 to about 150; a lack of any strong preferred growth orientation; and a length-to-width ratio (L/W) of less than 3 and only with a slight to moderate XRD line broadening.Type: GrantFiled: April 12, 2007Date of Patent: April 19, 2011Assignee: Seco Tools ABInventor: Sakari Ruppi
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Patent number: 7923070Abstract: This invention includes atomic layer deposition methods of forming conductive metal nitride comprising layers. In one implementation, an atomic layer deposition method of forming a conductive metal nitride comprising layer includes positioning a substrate within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate from a gaseous first precursor comprising at least one of an amido metal organic compound or an imido metal organic compound. The first species monolayer comprises organic groups. The chemisorbed first species is contacted with a second precursor plasma effective to react with the first species monolayer to remove organic groups from the first species monolayer. The chemisorbing and contacting are successively repeated under conditions effective to form a layer of material on the substrate comprising a conductive metal nitride.Type: GrantFiled: July 31, 2006Date of Patent: April 12, 2011Assignee: Micron Technology, Inc.Inventors: Brenda D. Kraus, Eugene P. Marsh
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Publication number: 20110060165Abstract: Metal aminotroponiminates, metal bis-oxazolinates and metal guanidinates are described, as well as ligand precursors of such compounds, and mixed ligand barium and strontium complexes suitable for chemical vapor deposition, atomic layer deposition, and rapid vapor deposition processes. Such metal compounds are useful in the formation of thin metal films on substrates, e.g., in chemical vapor deposition, atomic layer deposition or rapid vapor deposition processes. The substrates formed have thin film monolayers of the metals provided by the precursors.Type: ApplicationFiled: December 29, 2006Publication date: March 10, 2011Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Thomas M. Cameron, Chongying Xu, Tianniu Chen, Matthias Stender
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Patent number: 7892602Abstract: Methods for depositing a metal silicon nitride layer on a substrate during an atomic layer deposition (ALD) process. The methods provide positioning a substrate within a process chamber containing a centralized expanding channel that conically tapers towards and substantially covers the substrate, flowing a process gas into the centralized expanding channel to form a circular flow pattern, exposing the substrate to the process gas having the circular flow pattern, and exposing the substrate sequentially to chemical precursors during an ALD process to form a metal silicon nitride material. In one example, the ALD process provides sequentially pulsing a metal precursor, a nitrogen precursor, and a silicon precursor into the process gas having the circular flow pattern. The metal silicon nitride material may contain tantalum or titanium. In other examples, the process gas or the substrate may be exposed to a plasma.Type: GrantFiled: June 7, 2006Date of Patent: February 22, 2011Assignee: Applied Materials, Inc.Inventors: Hua Chung, Ling Chen, Barry L. Chin
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Patent number: 7887875Abstract: A silicon rich anti-reflective coating (30) is formed on a layer (10) in which narrow linewidth features are to be formed. Prior to the formation of a photoresist layer (50), the anti-reflecting coating (30) is exposed to excited oxygen species to reduce photoresist poisoning.Type: GrantFiled: September 30, 2002Date of Patent: February 15, 2011Assignee: Texas Instruments IncorporatedInventors: James B. Friedmann, Shangting Detweiler, Brian M. Trentman
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Publication number: 20110000852Abstract: In an embodiment, a method for manufacturing a thin layer chromatography (“TLC”) plate is disclosed. The method includes forming a layer of elongated nanostructures (e.g., carbon nanotubes), and at least partially coating the elongated nanostructures with a coating. The coating includes a stationary phase and/or precursor of a stationary phase for use in chromatography. Embodiments for TLC plates and related methods are also disclosed.Type: ApplicationFiled: June 30, 2010Publication date: January 6, 2011Applicant: BRIGHAM YOUNG UNIVERSITYInventors: Matthew R. LINFORD, Robert C. DAVIS, Richard R. VANFLEET, David JENSEN, Li YANG
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Publication number: 20100330363Abstract: A resin substrate of the present invention has a resin layer and a surface layer formed on a surface of the resin layer, wherein the surface layer is a layer comprising silicon nitride as a main component and deposited by the chemical vapor deposition method, and at the interface between the resin layer and the surface layer, at the interface between the resin layer and the surface layer, an interfacial region over which a percentage changes from 80% to 20% has a thickness of not more than 25 nm, wherein the difference between the maximum nitrogen concentration in the surface layer and the steady-state nitrogen concentration in the resin layer is taken as 100%. The surface layer has an average surface roughness (Ra) of not more than 1 nm. The resin substrate has properties of water vapor barrier and surface flatness.Type: ApplicationFiled: June 27, 2008Publication date: December 30, 2010Applicants: ULVAC, INC., UBE INDUSTRIES, LTD.Inventors: Tetsushi Fujinaga, Makiko Takagi, Masanori Hashimoto, Shin Asari, Ryuji Oyama
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Publication number: 20100310860Abstract: A method of forming an SiC or SiC/Si3N4 coating layer on a bare graphite substrate via a solid-vapor process is disclosed. Synthesis of the SiC coating layer on the graphite substrate is accomplished by reaction of SiO vapor and carbon (C) of the graphite, and that of the SiC/Si3N4 coating layer is accomplished by reaction of SiO vapor, N2 and C of the graphite. Thickness of the SiC coating layer is affected by porosity of the graphite substrate, reaction temperature, and dwell time. By controlling the reaction temperature, hardness of the SiC coating may be increased to 10-15 times that of the bare graphite substrate. The SiC/Si3N4 coating is much thinner than the SiC coating and has a higher surface hardness. Thermal oxidation tests show that the SiC or SiC/Si3N4 coated substrate exhibits improved oxidation resistance over bare substrates. In particular, the SiC/Si3N4 coated substrate shows outstanding resistance to thermal oxidation.Type: ApplicationFiled: February 28, 2008Publication date: December 9, 2010Inventors: Yeon Gil Jung, Sang Won Myoung, Ji Hun Kang, Jeong-Pyo Kim
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Patent number: 7838073Abstract: Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.Type: GrantFiled: May 4, 2010Date of Patent: November 23, 2010Assignee: Advanced Technology Materials, Inc.Inventors: Tianniu Chen, Chongying Xu, Thomas H. Baum
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Publication number: 20100288316Abstract: A water-guiding household device, in particular, a dishwasher, equipped with an improved drive shaft which is arranged in the wet running pump. A coating made of a chrome-nitrogen compound is applied to the drive shaft according to a PVD method.Type: ApplicationFiled: January 15, 2007Publication date: November 18, 2010Applicant: BSH Bosch und Siemens Hausgerate GmbHInventors: Roland Ertle, Bruno Reiter, Franz-Josef Wagner
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Publication number: 20100290945Abstract: Oxygen free, solution based zirconium precursors for use in ALD processes are disclosed for growing ZrO2 or other Zr compound films in a self-limiting and conformal manner. An oxygen free, solution based ALD precursor of (t-BuCp)2ZrMC2 is particular useful for depositing ZrO2 or other Zr compound films.Type: ApplicationFiled: May 13, 2009Publication date: November 18, 2010Inventors: Ce MA, Kee-Chan Kim, Graham Anthony McFarlane
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Patent number: 7824783Abstract: The present invention provides a heretofore-unknown use for zirconium nitride as a hydrogen peroxide compatible protective coating that was discovered to be useful to protect components that catalyze the decomposition of hydrogen peroxide or corrode when exposed to hydrogen peroxide. A zirconium nitride coating of the invention may be applied to a variety of substrates (e.g., metals) using art-recognized techniques, such as plasma vapor deposition. The present invention further provides components and articles of manufacture having hydrogen peroxide compatibility, particularly components for use in aerospace and industrial manufacturing applications. The zirconium nitride barrier coating of the invention provides protection from corrosion by reaction with hydrogen peroxide, as well as prevention of hydrogen peroxide decomposition.Type: GrantFiled: May 5, 2010Date of Patent: November 2, 2010Assignee: The Boeing CompanyInventor: Ali Yousefiani
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Patent number: 7815970Abstract: The present invention provides methods of preparing Group III-nitride films of controlled polarity and substrates coated with such controlled polarity films. In particular, the invention provides substrate preparation steps that optimize the substrate surface for facilitating growth of a Group III-polar film, an N-polar film, or a selectively patterned film with both a Group III-polar portion and an N-polar portion in precise positioning. The methods of the invention are particularly suited for use in CVD methods.Type: GrantFiled: May 11, 2006Date of Patent: October 19, 2010Assignee: North Carolina State UniversityInventors: Raoul Schlesser, Ramón R. Collazo, Zlatko Sitar
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Publication number: 20100255199Abstract: A method of coating a substrate that includes the steps of: applying by chemical vapor deposition at a temperature ranging between about 750 degrees Centigrade and about 920 degrees Centigrade an alpha-alumina coating layer wherein the alpha-alumina coating layer exhibits a platelet grain morphology at the surface thereof.Type: ApplicationFiled: June 18, 2010Publication date: October 7, 2010Applicant: Kennametal Inc.Inventors: Alfred S. Gates, JR., Pankaj K. Mehrotra, Charles G. McNerny, Peter R. Leicht
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Patent number: 7807225Abstract: A high-density plasma method is provided for forming a SiOXNY thin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a SiOXNY thin-film is formed, where (X+Y<2 and Y>0). The SiOXNY thin-film can be stoichiometric or non-stoichiometric. The SiOXNY thin-film can be graded, meaning the values of X and Y vary with the thickness of the SiOXNY thin-film. Further, the process enables the in-situ deposition of a SiOXNY thin-film multilayer structure, where the different layers may be stoichiometric, non-stoichiometric, graded, and combinations of the above-mentioned types of SiOXNY thin-films.Type: GrantFiled: January 26, 2007Date of Patent: October 5, 2010Assignee: Sharp Laboratories of America, Inc.Inventors: Pooran Chandra Joshi, Apostolos T. Voutsas, John W. Hartzell
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Publication number: 20100239850Abstract: A method for fabricating a composite material includes providing a free-standing carbon nanotube structure having a plurality of carbon nanotubes, introducing at least two reacting materials into the carbon nanotube structure to form a reacting layer, activating the reacting materials to grow a plurality of nanoparticles, wherein the nanoparticles are spaced from each other and coated on a surface of each of the carbon nanotubes of the carbon nanotube structure.Type: ApplicationFiled: November 25, 2009Publication date: September 23, 2010Applicants: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: Jia-Ping Wang, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Publication number: 20100233633Abstract: Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.Type: ApplicationFiled: May 24, 2010Publication date: September 16, 2010Applicant: Applied Materials, Inc.Inventors: Victor Nguyen, Yi Chen, Mihaela Balseanu, Isabelita Roflox, Li-Qun Xia, Derek R. Witty
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Patent number: 7791272Abstract: A light-emitting element includes a protective layer in contact with an upper electrode and a circular polarizer in contact with the protective layer.Type: GrantFiled: December 20, 2006Date of Patent: September 7, 2010Assignee: Canon Kabushiki KaishaInventors: Tomoyuki Tamura, Ichiro Kataoka
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Patent number: 7790230Abstract: A method of deposition by: depositing a metal halide on a substrate; providing a vapor that forms a material by way of chemical vapor deposition; heating the metal halide to a temperature at or above the melting point of the metal halide and at or below the melting point of the material; and contacting the metal halide with the vapor to cause growth on the substrate of a solid solution of the metal halide in the material. The metal is a rare earth metal or a transition metal.Type: GrantFiled: January 30, 2008Date of Patent: September 7, 2010Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael A Mastro, Jaime A. Freitas, Charles R. Eddy, Jr., Jihyun Kim
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Publication number: 20100221428Abstract: Pentakis(dimethylamino) disilane comprising compound is used along with a nitrogen containing gas and optionally an oxygen containing gas for SiN (and optionally SiON) film deposition by CVD.Type: ApplicationFiled: April 3, 2006Publication date: September 2, 2010Inventor: Christian Dussarrat
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Patent number: 7785658Abstract: A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging a reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas containing N and H and then purging the reaction space; (vi) repeating steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer.Type: GrantFiled: March 3, 2006Date of Patent: August 31, 2010Assignee: ASM Japan K.K.Inventors: Hiroshi Shinriki, Akira Shimizu
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Patent number: 7785664Abstract: A method is provided for depositing thin films in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited.Type: GrantFiled: December 14, 2005Date of Patent: August 31, 2010Assignee: IPS Ltd.Inventors: Tae Wook Seo, Young Hoon Park, Ki Hoon Lee, Sahng Kyoo Lee
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Publication number: 20100215842Abstract: Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.Type: ApplicationFiled: May 4, 2010Publication date: August 26, 2010Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Tianniu CHEN, Chongying XU, Thomas H. BAUM
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Publication number: 20100206716Abstract: A tantalum nitride film-forming method comprises the steps of introducing, into a vacuum chamber, a raw gas consisting of a coordination compound constituted by elemental Ta having a coordinated ligand represented by the general formula: N?(R,R?) (in the formula, R and R? may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) to thus adsorb the gas on a substrate; then introducing an NH3 gas and then activated H radicals derived from a reactant gas into a vacuum chamber to thus remove the R(R?) groups bonded to the nitrogen atom present in the reaction product through cleavage, and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film.Type: ApplicationFiled: March 3, 2006Publication date: August 19, 2010Inventors: Narishi Gonohe, Satoru Toyoda, Harunori Ushikawa, Tomoyasu Kondo, Kyuzo Nakamura
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Publication number: 20100203246Abstract: A deposition method of depositing a nitride film, including steps of introducing one or more nitrogen supplying gas selected from hydrazine and nitrogen oxides into a catalyst reaction apparatus; enabling a reactive gas generated by contacting the nitrogen supplying gas with catalyst to be spouted out from the catalyst reaction apparatus; and reacting the reactive gas with a compound gas, thereby depositing a nitride film on a substrate is disclosed.Type: ApplicationFiled: July 18, 2008Publication date: August 12, 2010Applicants: National University Corporation Nagaoka University of Technology, Tokyo Electron LimitedInventors: Kanji Yasui, Hiroshi Nishiyama, Kazuyuki Tamura, Yasunobu Inoue
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Patent number: 7767320Abstract: The invention relates to hard-coated bodies with a single- or multi-layer system containing at least one Ti1-xAlxN hard layer and a method for production thereof. The aim of the invention is to achieve a significantly improved wear resistance and oxidation resistance for such hard-coated bodies. Said hard-coated bodies are characterised in that the bodies are coated with at least one Ti1-xAlxN hard layer, generated by CVD without plasma stimulation present as a single-phase layer with cubic NaCl structure with a stoichiometric coefficient x>0.75 to x=0.93 and a lattice constant afcc between 0.412 nm and 0.405 nm, or as a multi-phase layer, the main phase being Ti1-xAlxN with a cubic NaCl structure with a stoichiometric coefficient x>0.75 to x=0.93 and a lattice constant afcc between 0.412 nm and 0.405 nm, with Ti1-xAlxN with a wurtzite structure and/or as TiNx with NaCl structure as further phase. Another feature of said hard layer is that the chlorine content is in the range of only 0.05 to 0.9 atom %.Type: GrantFiled: July 4, 2006Date of Patent: August 3, 2010Assignee: Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung E.V.Inventor: Ingolf Endler
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Publication number: 20100171272Abstract: Disclosed is a piston ring comprising a supporting material and a wear-resistant coating. The wear-resistant coating is composed of a ternary system A-B—N which is applied using a PVD process and in which A and B each represent an element form the group encompassing Ti, Zr, Hf, V, Nb, Ta, Cr, Mo W, Al, Si and C, wherein A ?B and N represents nitrogen. The thickness of the wear-resistant coating amounts to ?3 ?m.Type: ApplicationFiled: June 12, 2008Publication date: July 8, 2010Inventors: Steffen Hoppe, Manfred Fischer, Christiane Bauer, Ralf Lammers
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Patent number: 7740909Abstract: The present invention relates to a method to rationally coat cutting tool inserts comprising a substrate and a coating deposited using a CVD and/or MTCVD method. According to the invention the inserts are positioned on a net with a surface roughness, Ra, of the wires between 2 and 50 ?m.Type: GrantFiled: December 5, 2006Date of Patent: June 22, 2010Assignee: Seco Tools ABInventors: Lena Pettersson, Johnny Bergstedt, Edward Laitila, Bo Danielsen, Björn Lifvergren
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Patent number: 7737290Abstract: Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN?-diispropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates be the reaction of alternating doses of cobalt(II) bis(N,N?-diispropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.Type: GrantFiled: July 1, 2009Date of Patent: June 15, 2010Assignee: President and Fellows of Harvard UniversityInventors: Roy Gerald Gordon, Booyong S. Lim
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Patent number: 7732014Abstract: A method for diffusing titanium and nitride into a base material having a generally compact, granular microstructure (e.g., carbide). The method generally includes the steps of providing a base material having a generally compact, granular microstructure; providing a salt bath which includes sodium dioxide and a salt selected from the group consisting of sodium cyanate and potassium cyanate; dispersing metallic titanium formed by electrolysis of a titanium compound in the bath; heating the salt bath to a temperature ranging from about 430° C. to about 670° C.; and soaking the base material in the salt bath for a time of from about 10 minutes to about 24 hours. In accordance with another aspect of the present invention, the base material may further be treated with conventional surface treatments or coatings.Type: GrantFiled: April 18, 2006Date of Patent: June 8, 2010Inventors: Philos Jongho Ko, Bongsub Samuel Ko
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Publication number: 20100129994Abstract: A method for forming a film on a substrate comprising: heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the film on the substrate. The film comprises Si and C, and optionally comprises other elements such as N, O, F, B, P, or a combination thereof.Type: ApplicationFiled: February 27, 2008Publication date: May 27, 2010Inventors: Yousef Awad, Sebastien Allen, Michael Davies, Alexandre Gaumond, My Ali El Khakani, Riadh Smirani
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Publication number: 20100129626Abstract: Provided are scratch-, wear- and corrosion-resistant coatings for metal substrates, including orthopedic implants and other metal-containing constructs, as well as methods for making such coatings. The inventive coatings comprise multiple micron-width layers of titanium nitride, titanium carbonitride, or both titanium nitride and titanium carbonitride, and may also contain a layer of aluminum oxide, and may be characterized by alternating layers of titanium nitride and titanium carbonitride. The present coatings curtail the growth of microcracks that can otherwise result from surface cracks or scratches on coated substrates, and thereby provide improved wear characteristics, resist scratching, and prevent the penetration of corrosive fluids to the substrate material.Type: ApplicationFiled: October 26, 2009Publication date: May 27, 2010Inventor: Jason B. Langhorn
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Patent number: 7723535Abstract: This invention relates to organometallic precursor compounds represented by the formula i-PrN?Ta(NR1R2)3 wherein R1 and R2 are the same or different and are alkyl having from 1 to 3 carbon atoms, provided that (i) when R1 is ethyl, then R2 is other than ethyl and (ii) when R2 is ethyl, then R1 is other than ethyl, and a method for producing a film, coating or powder from the organometallic precursor compounds.Type: GrantFiled: May 9, 2005Date of Patent: May 25, 2010Assignee: Praxair Technology, Inc.Inventors: Delong Zhang, Cynthia Hoover