Abstract: A radiation image conversion panel exhibiting improved resistance to peeling or shock as well as enhanced sharpness is disclosed, comprising on a support a stimulable phosphor layer composed of columnar phosphor crystals formed through gas phase deposition, wherein the stimulable phosphor layer exhibits an X-ray diffraction pattern meeting the following ratio (I2/I1) of the highest peak intensity I1 and the second highest peak intensity I2: 0.3?I2/I1?1.0.

Abstract: A material containing, as a main component, an organic silicon compound represented by the following general formula: R1xSi(OR2)4-x (where R1 is a phenyl group or a vinyl group; R2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component. As the organic silicon compound where R1 is a phenyl group, there can be listed phenyltrimethoxysilane or diphenyldimethoxysilane. As the organic silicon compound where R1 is a vinyl group, there can be listed vinyltrimethoxysilane or divinyldimethoxysilane.

Abstract: A method for depositing an anti-stiction coating on a MEMS device comprises reacting the vapor of an amino-functionalized silane precursor with a silicon surface of the MEMS device in a vacuum chamber. The method can further comprise cleaning the silicon surface of the MEMS device to form a clean hydroxylated silicon surface prior to reacting the precursor vapor with the silicon surface. The amino-functionalized silane precursor comprises at least one silicon atom, at least one reactive amino (or imine) pendant, and at least one hydrophobic pendant. The amino-functionalized silane precursor is highly reactive with the silicon surface, thereby eliminating the need for a post-process anneal step and enabling the reaction to occur at low pressure. Such vapor-phase deposition of the amino-functionalized silane coating provides a uniform surface morphology and strong adhesion to the silicon surface.

Abstract: A radiographic image conversion panel including a support, and at least one photostimulable phosphor layer formed on the support by a vapor phase deposition method (vapor phase growth). The panel is manufactured according to deposition, and a temperature of the support at the time of deposition is controlled at 50° C. to 150° C.

Abstract: A radiographic image conversion panel includes: a support; and at least one photostimulable phosphor layer provided on the support, wherein at least one layer of the photostimulable phosphor layers is formed by a photostimulable phosphor, and an amount of an activation metal atom at an end of a photostimulable phosphor crystal and an amount of an activation metal atom in the vicinity of the support satisfy a specific formula.

Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Abstract: The present invention is in the field of polymer sheet anti-blocking and adhesion control compositions and methods, and more specifically, the present invention is in the field of polymer sheets, for example polyvinyl butyral sheets, having improved anti-blocking and adhesion properties obtained through fluorination.

Abstract: A ClF3 gas generation system is provided with supply sources of chlorine (3) (for example a cylinder of compressed chlorine) and fluorine (4) (for example a fluorine generator) connected into a gas reaction chamber (2) enabling generation of ClF3 gas. The reaction chamber has a valved outlet (C) for the supply of the ClF3 gas to a process chamber for immediate local use.

Abstract: The nucleation delay in the formation of a tungsten layer on a substrate is reduced or eliminated by alternative processes. In one process the substrate is exposed to atomic hydrogen before the tungsten nucleation layer is formed. In the other process the substrate is exposed to a boron hydride such as diborane (B2H6) before the nucleation layer is formed. The process works effectively to reduce or eliminate the tungsten nucleation delay on a variety of surfaces, including silicon, silicon dioxide, silicon nitride and titanium nitride.

Abstract: Improved dielectric materials suitable for use in integrated circuits and computer systems are provided by a chemical vapor deposition process employing fluoroalkane precursors.

Abstract: The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surface sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.

Abstract: A chemical vapor deposition (CVD) method for depositing high quality conformal tantalum (Ta) and tantalum nitride (TaNx) films from inorganic tantalum pentahalide (TaX5) precursors is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5) and tantalum pentabromide (TaBr5). A TaX5 vapor is delivered into a heated chamber. The vapor is combined with a process gas to deposit a Ta or TaNx film on a substrate that is heated to 300° C.-500° C. The deposited film is useful for integrated circuits containing copper films, especially in small high aspect ratio features. The high conformality of these films is superior to films deposited by PVD.

Abstract: A radiation image storage panel composed of a support and a phosphor film of a stimulable europium activated cesium bromide phosphor having the formula (I): CsBr.MIX?aMIIX?2+bMIIIX?3:zEu ??(I) [MI is an alkali metal element; MII is an alkaline earth metal element or a divalent metal element; MIII is a rare earth element or a trivalent metal element; each of X, X? and X? is a halogen; and 0?a<0.5, 0?b<0.5, 0?c<0.5, and 0<z<1.0] is prepared by the steps of depositing on the support a prismatic europium activated cesium bromide phosphor crystal layer on the support in a gas phase; and heating the crystal layer at a temperature of <300 ° C. but >50° C. for 1 to 8 hours in an inert gas atmosphere which may contain a small amount of oxygen or hydrogen.

Abstract: A family of extremely fine-grained alloys are used to make coatings or free-standing bodies having desirable properties for use as a heat-resistant and wear-resistant material. In an illustrative embodiment, the alloys are comprised of a multiplicity of alternate, microcrystalline or nanocrystalline films of tungsten metal and tungsten compound. The tungsten compound film may be comprised of a tungsten carbide or a tungsten boride. The tungsten films are the primary films. Their desirable characteristics, in addition to their very fine crystalline habit, per se, are the high strength, high hardness, high resilience, and high fracture energy which these fine crystallites foster. They may be manufactured by a chemical vapor deposition process in which reactive gas flows are rapidly switched to produce alternate films with abrupt hetero-junctions and thereby to produce the useful micro-crystalline habit. The unique synthesis method allows effective control of critical flaw size.

Abstract: A niobium doped tin oxide coating is applied onto a glass substrate to produce a low emissivity (low E) glass. The coating can optionally be doped with both niobium and other dopant(s), such as fluorine. The low emissivity glass has properties comparable or superior to conventional low E glass with fluorine doped tin oxide coatings.

Abstract: A CsX:Eu phosphor produced by heating a cesium halide with a Europium compound containing one or more halides selected from the group consisting of F, Cl, Br and I. Preferably the Europium compound is selected from the group consisting of EuX′2, and EuX′3 and EuX′, X′ being one or more halides selected from the group consisting of F, Cl, Br and I. The invention also includes novel phosphors having properties inherent to the manufacturing process as well as other phosphors containing a mixture of Br and Cl in the cesium halide, europium doped phosphor. A method for preparing a binderless phosphor screen using these phosphors and a method for recording and reproducing an X-ray image using such screens are also disclosed.

Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.

Abstract: A method wherein a thermal gradient over a substrate enhances Chemical Vapor Deposition (CVD) at low pressures. An upper heat source is positioned above the substrate and a lower heat source is positioned below the substrate. The upper and lower heat sources are operated to raise the substrate temperature to 400-700° and cause a heat gradient of 100-200° C. between the upper and lower heat sources. This heat gradient causes an increase in the deposition rate for a given reactant gas flow rate and chamber pressure. The preferred parameters for implementation of the present invention for poly crystalline silicon deposition include the temperature of the upper heat source 100-200° C. above the lower heat source, a substrate temperature in the range of 400-700° C., a reactant gas pressure between 250 and 1000 mTorr, and a gas flow rate of 200-800 sccm. The substrate is rotated, with 5 RPM being a typical rate.

Abstract: A low refractive index SiO2 film is provided which uses a starting material for forming an SiO2 film and has a lower refractive index than the conventional SiO2 film.

Abstract: The present invention describes a method of forming a thin film on a substrate arranged in a deposition system comprising the step of introducing a pre-determined amount of an impurity in a confined volume in the deposition system. One or more gases are introduced into the deposition system for forming the thin film. The impurity is removed from the confined volume in a gas phase during formation of the thin film. The impurity in the gas phase is incorporated into the thin film.

Abstract: This invention concerns a method for modifying a source material used in an ALD process, a method for depositing transition metal nitride thin films by an ALD process and apparatus for use in such process. According to the present invention transition metal source materials are reduced by vaporizing a metal source material, conducting the vaporized metal source material, into a reducing zone comprising a solid reducing agent maintained at an elevated temperature. Thereafter, the metal source material is contacted with the solid or liquid reducing agent in order to convert the source material into a reduced metal compound and reaction byproducts having a sufficiently high vapor pressure for transporting in gaseous form.

Abstract: The present invention provides methods and apparatus for the formation of a thin noble metal film which can achieve a high rate of film growth, can use inexpensive raw materials, and do not allow any impurities to remain in the thin film.

Abstract: A CsBr:Eu phosphor showing a narrow emission spectrum upon UV-excitation and panels including such a phosphor are disclosed. Also methods for preparing such a phosphor have been described.

Abstract: Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. A CVD method includes: (a) providing a substrate within a vacuum chamber; (b) introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and (c) applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.

Abstract: A method of forming (and apparatus for forming) tantalum suicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using a vapor deposition process with a tantalum halide precursor compound, a silicon precursor compound, and an optional nitrogen precursor compound.

Abstract: CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.

Abstract: A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

Abstract: The present invention provides methods and apparatus for the formation of a thin noble metal film which can achieve a high rate of film growth, can use inexpensive raw materials, and do not allow any impurities to remain in the thin film.

Abstract: A membrane having a stable low-contact angle that is used as a template in forming biological microarrays is provided. The membrane is formed of a polymeric material that has been surface modified by a first plasma treatment and subsequently by a second plasma treatment. The surface modification accomplished by the first plasma treatment results in a significant reduction in the contact angle for the membrane, causing the membrane to become hydrophilic, and the surface modification by the second membrane treatment permanently stabilizes the reduction in the contact angle produced by the first plasma treatment. The resulting membrane allows a solution containing a biological material to wet the surface of the membrane such that the membrane can quickly and easily form a biological microarray on substrate in which the features of the array are distinctly formed on the substrate.

Abstract: The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process using a Si2Cl6 source unlike a conventional atomic layer deposition process using a SiCl4 source. The atomic layer deposition apparatus used in the above process can be in-situ cleaned effectively at low temperature using a HF gas or a mixture gas of HF gas and gas containing —OH group.

Abstract: A process of treating natural rubber latex articles, such as gloves and condoms, to alter the characteristics of the article so as to improve its barrier properties and resistance to passage of harmful agents therethrough, and the article produced by the process. The article is manufactured in accordance with conventional methods and then treated with a reactive gas, in particular a halogen gas such as fluorine gas, or a mixture of gasses. The treatment is conducted in a sealed chamber in accordance with the protocol of the “Level 1” fluorination treatment performed by Fluoro-Seal, Inc., of Ontario, Calif.

Abstract: A method of chemically depositing a copper film in which a bromine or iodine-containing catalyst component is employed to enhance the deposition rate. The present invention is characterized in that the catalyst component floats on the film surface during the film formation. Accordingly, a film deposition having superior step coverage and high deposition rate is obtained.

Abstract: A method of depositing by chemical vapor deposition a modified platinum aluminide diffusion coating onto a superalloy substrate comprising the steps of applying a layer of a platinum group metal to the superalloy substrate; passing an externally generated aluminum halide gas through an internal gas generator which is integral with a retort, the internal gas generator generating a modified halide gas; and co-depositing aluminum and modifier onto the superalloy substrate. In one form, the modified halide gas is hafnium chloride and the modifier is hafnium with the modified platinum aluminum bond coat comprising a single phase additive layer of platinum aluminide with at least about 0.5 percent hafnium by weight percent and about 1 to about 15 weight percent of hafnium in the boundary between a diffusion layer and the additive layer. The bond coat produced by this method is also claimed.

Abstract: Fluorinated, diamond-like carbon (F-DLC) films are produced by a pulsed, glow-discharge plasma immersion ion processing procedure. The pulsed, glow-discharge plasma was generated at a pressure of 1 Pa from an acetylene (C2H2) and hexafluoroethane (C2F6) gas mixture, and the fluorinated, diamond-like carbon films were deposited on silicon <100>substrates. The film hardness and wear resistance were found to be strongly dependent on the fluorine content incorporated into the coatings. The hardness of the F-DLC films was found to decrease considerably when the fluorine content in the coatings reached about 20%. The contact angle of water on the F-DLC coatings was found to increase with increasing film fluorine content and to saturate at a level characteristic of polytetrafluoroethylene.

Abstract: The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

Abstract: This invention relates to a corrosion-resistant member comprising a ceramic substrate and a silicon carbide film formed through a chemical vapor deposition process and having a resistivity at room temperature of 20-500 &OHgr;·cm, and a method of manufacturing the same as well as an heating apparatus using the same.

Abstract: A radiation image storage panel having a phosphor layer which is composed of a phosphor having a matrix component and an activator component is prepared by the steps of forming on a substrate a lower prismatic crystalline layer composed of the matrix component by vapor deposition; and forming on the lower prismatic crystalline layer an upper prismatic crystalline layer composed of the matrix component and the activator component by vapor deposition.

Abstract: A method is described for forming a low-k dielectric film, in particular, a pre-metal dielectric (PMD) on a semiconductor wafer which has good gap-filling characteristics. The method uses a thermal sub-atmospheric CVD process that includes a carbon-containing organometallic precusor such as TMCTS or OMCTS, an ozone-containing gas, and a source of dopants for gettering alkali elements and for lowering the reflow temperature of the dielectric while attaining the desired low-k and gap-filling properties of the dielectric film. Phosphorous is a preferred dopant for gettering alkali elements such as sodium. Additional dopants for lowering the reflow temperature include, but are not limited to boron, germanium, arsenic, fluorine or combinations thereof.

Abstract: An atomic layer deposition (ALD) method employing Si2Cl6 and NH3, or Si2Cl6 and activated NH3 as reactants. In one embodiment, the invention includes the steps of (a) placing a substrate into a chamber, (b) injecting a first reactant containing Si2Cl6 into the chamber, (c) chemisorbing a first portion of the first reactant onto the substrate and physisorbing a second portion of the first reactant onto the substrate, d) removing the non-chemically absorbed portion of the first reactant from the chamber, (e) injecting a second reactant including NH3 into the chamber, (f) chemically reacting a first portion of the second reactant with the chemisorbed first portion of the first reactant to form a silicon-containing solid on the substrate, and (g) removing the unreacted portion of the second reactant from the chamber. In other embodiments, the first reactant can contain two or more compounds containing Si and Cl, such as Si2Cl6 and SiCl4.

Abstract: A niobium doped tin oxide coating is applied onto a glass substrate to produce a low emissivity (low E) glass. The coating can optionally be doped with both niobium and other dopant(s), such as fluorine. The low emissivity glass has properties comparable or superior to conventional low E glass with fluorine doped tin oxide coatings.

Abstract: A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active CuxCly, wherein x is 1 to 3, y is 1 to 3, gas, and forming a copper film by transporting the CuxCly gas onto the surface of a substrate to be processed. By using inexpensive high-purity copper and inexpensive chlorine, hydrogen chloride, or chlorine and hydrogen as source gases, a copper film containing no residual impurity such as carbon and having high film quality can be formed with high reproducibility.

Abstract: The present methods provide an amorphous, conformal, protective, abrasion-resistant, lubricious fluoropolymer coating on to a polymer substrate via a gas plasma deposition method. The coating method, according to one embodiment of the method, involves generating a gas plasma by introducing a mixture of a fluorinated gas monomer and a hydrocarbon gas into an energetic ion field, such as an ion beam or the field produced by a radio-frequency source. The fluorinated gas monomer is selected from the group consisting of CF.sub.4, C.sub.2 F.sub.4, C.sub.2 F.sub.6, CF.sub.3.sub.2CO, CH.sub.2 CF.sub.2 and mixtures of the foregoing. The hydrocarbon gas is selected from the group consisting of C.sub.2 H.sub.2, C.sub.2 H.sub.4, C.sub.2 H.sub.6, and H.sub.2 and mixtures of the foregoing. The polymer substrate is exposed to the foregoing gas plasma for sufficient time to achieve the desired coating thickness.

Abstract: A body is at least partially coated with one or more refractory layers of which at least one layer is of a finegrained &kgr;-Al2O3. Said &kgr;-Al2O3 layer has equiaxed grains with an average grain size of <0.5 &mgr;m. The Al2O3 layer also has at least one sublayer containing Al, Si and O. The finegrained &kgr;-Al2O3 microstructure is obtained by periodically introducing a silicon halide, preferably SiCl4, during the Al2O3-process.

Abstract: The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

Abstract: A method for chemical vapor deposition comprises providing a quantity of nitrogen at the interface between a transition metal-based material and an underlying dielectric-covered substrate. The nitrogen can be provided by heating the substrate in an atmosphere of a nitrogen-containing process gas or by exposing the surface of the dielectric-covered substrate to a plasma generated from a nitrogen-containing process gas. In certain embodiments, the nitrogen on the surface of the dielectric is bound with atoms of a transition metal to form a thin layer of a transition metal nitride. The method promotes the adhesion of the transition metal-based layer to the dielectric by nullifying the effect of halogen atoms that are also incorporated at the transition metal/dielectric interface.

Abstract: A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

Abstract: A method for producing a nano-porous coating onto a substrate, including the steps of: (a) operating a twin-wire arc nozzle to heat and at least partially vaporize two wires of a metal for providing a stream of nanometer-sized vapor clusters of the metal into a chamber in which the substrate is disposed; (b) injecting a stream of reactive gas into the chamber to impinge upon the stream of metal vapor clusters and exothermically react therewith to produce substantially nanometer-sized metal compound or ceramic clusters; (c) operating heat treatment devices to heat treat the metal compound or ceramic clusters so that a non-zero proportion of the clusters is in a solid state when impinging upon the substrate; and (d) directing the metal compound or ceramic clusters to impinge and deposit onto the substrate for forming the nano-porous coating.

Abstract: A method for forming a metal layer located over a metal underlayer of a semiconductor device, using a metal halogen gas. The method involves supplying a predetermined reaction gas into a reaction chamber for a predetermined period of time prior to deposition of the metal layer. The reaction gas has a higher reactivity with an active halogen element of a metal halogen gas supplied to form the metal layer, compared to a metal element of the metal halogen gas. As the metal halogen gas is supplied into the reaction chamber, the reaction gas reacts with the halogen radicals of the metal halogen gas, so that the metal underlayer is protected from being contaminated by impurities containing the halogen radicals.

Abstract: In a method for producing a titanium monophosphide layer, a carrier is first placed in a reactor. Thereafter, a TiN layer is deposited on the carrier by supplying TiCl4 ad NH3 into the reactor. The TiN layer is annealed immediately after deposition of the TiN layer while PH3 is supplied to the reactor, in order to form the titanium monophosphide layer on the TiN layer.

Abstract: Thick dielectric films are deposited on a substrate by building up a plurality of layers by PECVD (Plasma Enhanced Chemical Vapor Deposition) in a reactor, each layer having a thickness less than the final thickness of the film to be deposited. The reactor is cleaned between the deposition of each layer. In this way, it is possible to form high quality, optical films.