Abstract: Extraneous and undesirable particulate matter is suppressed in a reaction chamber for treating semiconductor materials by depositing a thin layer of polymeric or equivalent insulating material over the entire interior surfaces of the reaction chamber prior to any treatment therein of semiconductor wafers or the like. This process is repeated as necessary after the initial treatment of the wafers has begun, and this treatment will typically include the layer deposition and layer etching on the surfaces of the semiconductor wafers. The periodic intervals between subsequent polymer layer deposition within the reaction chamber is selected in proportion to measured etch or deposition rates therein to thereby optimize the stability and uniformity of these etch and deposition rates, while simultaneously maintaining a maximum degree of cleanliness within the reaction chamber and minimizing down time therefor.

Abstract: The process for the photochemical treatment of a solid material consists of exposing the latter to light pulses produced by at least one glow discharge elongated tube (4) having a rare gas under low pressure and whereof the gas, the pressure and the characteristics of the discharge are adapted to said material and its precursors, each pulse containing an extensive emission spectrum between 160 and 5000 nm. An electrical circuit with modulatable electrical characteristics (LC) makes it possible to modulate the discharge characteristics of the tube and the storage of the energy necessary for said discharge.

Abstract: A method is disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets circumferentially arranged about a cylindrical and symmetrical chamber with microwave power injected perpendicularly to a longitudinal axis of the chamber for preventing line-of-sight communication of resulting energetic electrons through an outlet at one axial end of the chamber. The circumferential magnets in the symmetrical chamber cause precessing of the electrons resulting in greatly increased plasma density and ion flux or current density even at low gas pressures which are preferably maintained for establishing unidirectionality or anisotropic plasma characteristics.

Abstract: A method of and an apparatus for synthesizing a diamondlike thin film on a substrate, the method comprising the steps of: generating plasma of gas containing hydrocarbon gas, in a first vacuum vessel having an inflow portion and an outflow portion for the gas such that the substrate is provided in a second vacuum vessel maintained at a pressure lower, by one figure or more, than that of the first vacuum vessel due to flow resistance of the gas between the outflow portion and the substrate; and irradiating the plasma onto the substrate by pressure difference between the first vacuum vessel and the second vacuum vessel while an AC power is being applied to at least one of the substrate and an internal electrode provided in the first vacuum vessel.

Abstract: The inventive system treating the surface of a material by utilizing high intensity ultraviolet light for glazing, cleaning and other such purposes. The system includes a high intensity ultraviolet light is generated by a liquid jet plasma pinch unit, and is repetitively pulsed to raise the surface temperature of the material rapidly to a predetermined high temperature. In one form of the invention, the system is mounted either on a vehicle, or on an overhead structure for facilitating the movement of the pinch unit to the surface to be treated. In another form of the invention, the pinch unit includes a light emitting assembly which can be lowered into an opening in a workpiece to be treated.

Abstract: In the method for making the magnetic recording wherein a first magnetic layer is formed on a substrate and a second magnetic layer is formed on the first magnetic layer, before forming the second magnetic layer, accelerated ions are irradiated onto a surface of the first magnetic layer. Thereby, naturally formed oxidized layer and adhered impurity on the first magnetic layer are removed from the surface of the first magnetic layer by ion etching action by the irradiation of ions, and hence a preferable condition of an interface between the first magnetic layer and subsequently formed second magnetic layer is obtained.

Abstract: The invention is directed to a procedure for processing joints to be soldered, preferably printed circuit boards fitted with electric components, and an arrangement for executing this procedure, wherein the joints are subjected to plasma treatment before the soldering process. The joints may be subjected to plasma treatment separately or in the relative position necessary for the soldering process.

Abstract: A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the conductive structures formed atop the substrate. A trench is formed in the upper silicon surface and a source conductive layer is deposited to electrically contact the source region as a gate conductive layer is deposited atop the gate oxide layer. The trench sidewall is profile tailored using a novel O.sub.2 -SF.sub.6 plasma etch technique. An oxide sidewall spacer is formed on the sides of the pattern definer and gate oxide structures, before depositing the conductive material. A planarizing layer is applied and used as a mask for selectively removing any conductive material deposited atop the oxide spacer.

Abstract: Thin films (e.g. less than 100 nm thick) of a metal oxide material can be deposited on a variety of hydrophilic substrates by hydrolysis. Deposition is achieved by reacting a vapor of an appropriate metal-containing compound with water at or near the substrate's surface. The resulting deposited film can serve a variety of uses, for example, as a photo-resist in micro-electronics or in any area where protective films are useful, such as the passivation of ternary metal oxide superconductors.