Abstract: A method for use in a plasma treatment system that shortens the time required for the cleaning of a fluorine containing carbon film adheared in a vacuum vessel and protects the surface of a transfer table when the cleaning is carried out. After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O2 gas is produced, and the C—C and C—F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O2 gas penetrates into the CF film at places where the C—C and C—F bonds have been cut, to react with C of the CF film to form CO2 which scatters. On the other hand, F scatters as F2. Thus, the CF film is removed.

Abstract: Manufacture a spatial light modulator by fabricating a first set of micro-mirrors, then subsequently fabricating a second set of micro-mirrors interspersed with the first set, to reduce space between adjacent micro-mirrors versus what could be done by simultaneously fabricating all the micro-mirrors as one set.

Abstract: Method of depositing a layer of amorphous silicon film on a substrate at a very fast deposition rate while maintaining superior film quality. A plasma volume in a process chamber is defined. A total flow rate of a mixture of gases introduced into the chamber is also defined. The total flow rate is the sum of the flow rates of the respective gases in the mixture. Next, a process parameter that includes the plasma volume and total flow rate is defined. The process parameter is then maintained in a first predetermined relationship with a predetermined value during the deposition of the amorphous silicon film.

Abstract: In one aspect, the invention encompasses a method of chemical vapor deposition. A vaporization surface Is provided and heated. At least one material is flowed past the heated surface to vaporize the material. A deposit forms on the vaporization surface during the vaporization. The vaporization surface is then utilized as an electrode to form a plasma, and at least a portion of the deposit is removed with the plasma. In another aspect, the invention encompasses a vapor forming device. Such device includes a non-vapor-state-material input region, a vaporization surface, and a flow path between the non-vapor-state-material input region and the vaporization surface. The device further includes a vapor-state-material output region, and a vapor flow path from the vaporization surface to the vapor-state-material output region.

Abstract: A production process for a magnetic recording medium comprising a non-magnetic substrate, a non-magnetic undercoat film, a magnetic film, and a protective film predominantly comprising carbon, which protective film is formed through a plasma CVD method by use of carbon-containing gas as a source and which process comprises applying an oxygen plasma to carbon deposits on the inner walls of a chamber or carbon present in the chamber for transformation.

Abstract: A method of forming a ruthenium dioxide film for such purposes as the fabrication of stable thin-film resistors for microcircuits. The method generally entails forming an inorganic ruthenium-based film on a substrate, and then thermally decomposing at least a portion of the ruthenium-based film by exposure to a high-intensity beam of radiation, preferably visible light, to yield a ruthenium dioxide film on the substrate. Particular ruthenium-based precursors useful for forming the ruthenium-based film include ruthenium (III) chloride (RuCl3.nH2O) and ruthenium (III) nitrosyl nitrate. The method does not require a thermal treatment that heats the bulk of the substrate on which the ruthenium dioxide film is formed, and is therefore suitable for non-ceramic substrate materials, e.g., polymers such as those used as printed circuit boards (PCBs) and flexible circuits.

Abstract: The invention relates to a wear-resistant, highly stressed and low-friction boundary coating construction for titanium or the alloys thereof which can be advantageously used in order to protect human implants. According to the inventive boundary coating construction the boundary coating is comprised of a 200 to 400 nm thick DLC coating (4), a 5 to 50 nm thick intermediate coating (3) and a 0.3 to 2.0 mm thick gas alloyed coating (2), said gas alloyed coating having a hardness between 600 HV0.1 and 1,400 HV0.1. The inventive boundary coating construction is produced by firstly melting the surface of the member which is to be protected. The surface is then gas alloyed and cleaned in an N2/Ar atmosphere. Subsequently, the intermediate coating is first deposited followed by a depositing of the hard amorphous carbon coating by means of the laser-induced, pulsed vacuum arc (laser-arc) method.

Abstract: A method for scrubbing and passivating an anode plate (100) of a field emission display (120) includes the steps of providing a scrubbing passivation material (127); imparting to scrubbing passivation material (127) an energy selected to cause removal of a contamination layer (123, 117) from anode plate (100); causing scrubbing passivation material (127) to be received by contamination layer (123, 117), thereby removing contamination layer (123, 117); and depositing at least a portion of scrubbing passivation material (127) on anode plate (100), thereby forming a passivation layer (129).

Abstract: A plasma process, which can fabricate a deposition film in short time and at low cost, which can fabricate a deposition film with excellent reproducibility, which can greatly decrease the cleaning time upon cleaning, and which is optimum for fabricating a deposit film, especially a photosensitive member for electrophotography, capable of achieving a high charge potential upon electrification and capable of obtaining clear images with less image defects, is arranged such that a raw-material gas comprising silicon is introduced into a deposition chamber while evacuating the deposition chamber capable of being kept airtight in a vacuum, the raw-material gas is decomposed by high-frequency power in the VHF band, film formation is carried out to form a deposit film on a substrate installed in the deposition chamber, and thereafter cleaning inside the deposition chamber is carried out by etching and removing a deposit film depositing inside the deposition chamber, using a gas containing at least fluorine and using

Abstract: An OAUGD plasma is generated using, for example, paraelectric or peristaltic electrohydrodynamic (EHD) techniques, in the plasma generator of a remote-exposure reactor, wherein one or more active species, especially oxidizing species in the plasma are convected away from the plasma-generation region and directed towards a workpiece that is located outside of the plasma-generation region (e.g., within an optional remote-exposure chamber configured to the plasma generator). In this way, the workpiece can be subjected to the one or more active species without directly being subjected to either the plasma or to the electric fields used to generate the plasma. The plasma generator may have a set of flat panels arranged within an air baffle to convect the active species in a serpentine manner through the plasma generator.

Abstract: A water-vapor-permeable, watertight, heat-reflecting flat composite is made by a process of combining a metal layer and a nonporous, water-vapor-permeable, watertight, hydrophilic flat substrate. The process includes at least the three steps of (1) selecting the substrate, (2) pre-cleaning the substrate, and (3) applying the substrate to the metal layer. Such a composite offers protection from heat loss, infrared-based detection, ultraviolet radiation, electro-smog, and static electricity.

Abstract: The present invention generally provides a method for stabilizing a halogen-doped silicon oxide film, particularly a fluorinated silicon oxide film. The invention also provides a method for preventing loosely bonded halogen atoms from reacting with components of the barrier layer during subsequent processing of the substrate. The invention provides a hydrogen plasma treatment of the halogen-doped silicon oxide film without subjecting the substrate to a heated environment that may damage the substrate and the structures formed on the substrate. The invention also improves the adhesion strength between the halogen-doped silicon oxide film and the barrier layer. Furthermore, the hydrogen plasma treatment can be practiced in a variety of plasma processing chambers of an integrated process sequence, including pre-clean chambers, physical vapor deposition chambers, chemical vapor deposition chambers, etch chambers and other plasma processing chambers.

Abstract: A method for providing a waterborne, inorganic barrier coating to a polyolefin substrate is described. The method involves applying a primer composition containing a vinyl polymer, wherein at least 75% of the polymer repeat units contain side groups having hydroxyl moieties, to the substrate. This primer coating facilitates the application and binding of the subsequently applied barrier coating composition to the substrate.

Abstract: A method of making a spinner disc for a rotary fiberization process, such as but not limited to a glass fiberization process, includes: forming a spinner disc from an alloy that forms a protective oxide film on surfaces of the spinner disc exposed to the atmosphere; forming fiberizing holes in an annular peripheral sidewall of the spinner disc; and applying a plasma to a surface of the spinner disc to remove hydrocarbons and sulfurous compounds from the surface of the spinner disc which would otherwise reduce and/or react with and degrade the protective oxide film forming on the surface of the spinner disc when the spinner disc is exposed to the atmosphere.

Abstract: Method for removing a portion of the binder phase from the surface of a substrate that is composed of particles of at least a first phase joined together by the binder phase, and wherein the surface is etched by contacting it with a gas flow of an etchant gas and a second gas. The second gas is one or more gases that will not react with the substrate or the removed binder phase and will not alter the oxidation state of the substrate during etching.

Abstract: A method for manufacturing a nonlinear optical thin film of a silica glass system with sufficient nonlinear optical characteristics, in which a glass substrate 12 is disposed within a vacuum deposition chamber 10 and an electron beam is applied to a SiO2—GeO2-system glass placed on a hearth liner 14 to form a SiO2—GeO2-system thin film on the surface of the substrate 12. In an application of this method, ions of argon, for example, are emitted from an ion source to produce dipoles in the deposited SiO2—GeO2-system thin film. By applying an electric field to the SiO2—GeO2-system thin film thus formed, the dipoles are oriented to let the thin film exhibit nonlinear optical characteristics.

Abstract: A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.

Abstract: A method of manufacturing metallic interconnects. A substrate has a copper line formed therein. An inter-metal dielectric layer is formed over the substrate and the copper line. A patterned photoresist layer is formed over the inter-metal dielectric layer. The inter-metal dielectric layer is etched to form a trench and a contact opening that exposes a portion of the copper line, wherein the contact opening is under the trench. At a low temperature and using a plasma derived from a gaseous mixture N2H2 (H2:4%)/O2, the photoresist layer is removed. Any copper oxide layer formed on the copper line in the process of removing photoresist material is reduced back to copper using gaseous N2H2 (H2:4%). A barrier layer conformal to the trench and the contact opening profile is formed. Copper is deposited to form a conformal first copper layer over the trench and the contact opening.

Abstract: A method is disclosed for treating the surface of tools made of tool steel, wherein primary carbides are embedded in the tool steel matrix. The thickness of the primary carbides disposed near the surface can be reduced by forming a surface which has point-wise recess; alternatively, the primary carbides can be completely removed. A hard material layer is deposited on this surface. The invention also describes tools made of tool steel, wherein primary carbides are embedded in the tool steel matrix. The primary carbides are significantly recessed, and a hard material layer is deposited thereon.

Abstract: A process for producing a coating on components having peripheries to be placed in direct contact with vaporous media. Such peripheries are wetted over part or all of their surface with a film of liquid when the vaporous media are changed from the vapor state into the liquid state by phase transition. Such films of liquid increase the thermal resistance, for example, of the components. In order to avoid such wetting, the peripheries of each component are roughened. A coat of a non-wettable, amorphous carbon is then applied to the peripheries, at least in regions thereof.

Abstract: The surface of an article with a metallic base body is cleaned. A plasma comprising electrically positively charged ions is generated, and the ions are accelerated toward the article, so that they come into contact with the base body for cleaning purposes. To do this, an electron beam is directed onto the base body. The outgoing flux of electrons which come into contact with the base body is controlled by the base body being connected to a reference potential via a switch of at a fixed, adjustable or regulated frequency.

Abstract: This invention is a process and apparatus for producing single crystal, polycrystal or amorphous stand-alone films. The process has two steps: First, thin layers of the desired materials are deposited by VD onto a hot foreign single crystal substrate wafer held by a substrate platter in a pocket formed in such. The second step is to chemically etch away the substrate while still being held by the substrate platter while the film-substrate is still hot. The etch is stopped as soon as all of the foreign substrate is consumed. This leaves just the thin film which is then cooled down to room temperature. The bottom surface of this pocket has a plurality of channels for carrying an etching gas which is input by a central channel in the substrate platter. The reactants that form the stand-alone film are input through an actively cooled effusion cell having a plenum for receiving the reactant gas.

Abstract: There is disclosed a method and apparatus for forming a thin film of a composite metal compound. Independent targets formed of at least two different metals are sputtered so as to form on a substrate an ultra-thin film of a composite metal or an incompletely-reacted composite metal. The ultra-thin film is irradiated with the electrically neutral, activated species of a reactive gas so as to convert the composite metal or the incompletely-reacted composite metal to a composite metal compound through the reaction of the ultra-thin film with the activated species of the reactive gas. The formation of the ultra-thin film and the conversion to the composite metal compound are sequentially repeated so as to form on the substrate a thin film of the composite metal compound having a desired thickness.

Abstract: Provided is a support for an ink jet recording material. The support comprises a substrate and a UV cured resinous coating layer on the substrate, with said resinous coating layer being comprised of a tetrafunctional polyester acrylate, a difunctional acrylic ester, a UV photoinitiator and a polyether.

Abstract: A method for mask-free molecular or atomic patterning of surfaces of reactive solids is disclosed. A molecular-scale pattern of adsorbate molecules is used in place of the conventional macroscopic “mask”. Molecules adsorb at surfaces in patterns, governed by the structure of the surface, the chemical nature of the adsorbate, and the adsorbate coverage at the surface. The surface is patterned and then marked or imprinted with the pattern by inducing localised chemical reaction between adsorbate molecules and the surface of the solid, resulting in an imprint being formed in the vicinity of the adsorbate molecules. In one aspect of the invention, photoinduced or electron-induced reaction of the patterned adsorbate leads to patterned reaction with the surface.

Abstract: In one aspect, the invention encompasses a method of utilizing a vaporization surface as an electrode to form a plasma within a vapor forming device. In another aspect, the invention encompasses a method of chemical vapor deposition. A vaporization surface is provided and heated. At least one material is flowed past the heated surface to vaporize the material. A deposit forms on the vaporization surface during the vaporization. The vaporization surface is then utilized as an electrode to form a plasma, and at least a portion of the deposit is removed with the plasma. In another aspect, the invention encompasses a vapor forming device. Such device includes a non-vapor-state-material input region, a vaporization surface, and a flow path between the non-vapor-state-material input region and the vaporization surface. The device further includes a vapor-state-material output region, and a vapor flow path from the vaporization surface to the vapor-state-material output region.

Abstract: A method of manufacturing a 1-inch diameter glass substrate for a magnetic disc in which a plate glass is press molded using a mold formed of a super-hard material and having a surface of a prescribed roughness. Ion implantation using nitrogen ions is performed on the surface of the mold, after which ion implantation using palladium ions, platinum ions, and carbon ions is performed in the order given. Finally, the surface of the mold is coated with a graphite or amorphous diamond-like carbon coating.

Abstract: A method of manufacturing a 2-5 inch diameter glass substrate for a magnetic disc in which a plate glass is press molded using a mold formed of a super-hard material and having a surface of a prescribed roughness. Ion implantation using nitrogen ions is performed on the surface of the mold, after which ion implantation using palladium ions, platinum ions, and carbon ions is performed in the order given. Finally, the surface of the mold is coated with a graphite or amorphous diamond-like carbon coating.

Abstract: A process for the surface treatment of a running substrate by an electrical discharge created between two roller electrodes, comprising a first roller electrode and a second roller electrode, in a gas mixture comprising the steps of passing the substrate in between the two roller electrodes by applying it against the first roller electrode; injecting the gas mixture between the rollers to apply a first surface treatment to the substrate; passing the substrate in between the two roller electrodes by applying it against a second roller electrode; and injecting the gas mixture between the rollers to apply a second surface treatment to the substrate.

Abstract: Before submitting a sample, including a first material layered upon a substrate, to an ion milling process, whereby a second material is sputtered onto the surface of the first material and the sample is then submitted to an etching process, an irregularity is formed on the surface of the first material. The overall process results in the formation of cones, or micro-tip structures, which may then be layered with a layer of low work function material, such as amorphous diamond. The irregularity in the surface of the first material may be formed by polishing, sandblasting, photolithography, or mechanical means such as scratching.

Abstract: There is provided a plastic base material having a reformed layer 2 formed on a plastic substrate 1 by reforming the surface layer thereof into a component containing fluorine at the ratio of the number of fluorine atoms to the number of carbon atoms, F/C, of 0.85 or more and 1.30 or less, and having highly durable water repellency and ink repellency. The method of manufacturing such a plastic base material comprises a step of reforming the surface of the plastic substrate 1 into a fluorine-containing carbon layer by imparting a specific energy to fluorine-containing plasma by applying an RF bias voltage to the plastic substrate 1 to form a surface having highly durable water repellency and ink repellency. A highly durable ink-jet printer that enables high-quality printing can be provided by the use of a head for an ink-jet printer fabricated by using this plastic base material.

Abstract: The invention comprises integrated circuitry fabrication methods of making a conductive electrical connection, methods of forming a capacitor and an electrical connection thereto, methods of forming DRAM circuitry, integrated circuitry, and DRAM integrated circuitry. In one implementation, an integrated circuitry fabrication method of making a conductive electrical connection includes forming a conductive layer including a conductive metal oxide over a substrate. The conductive layer has an outer surface. At least a portion of the conductive layer outer surface is exposed to reducing conditions effective to reduce at least an outermost portion of the metal oxide of the conductive layer, most preferably by removing oxygen. Conductive material is formed over the reduced outermost portion and in electrical connection therewith. In one implementation, integrated circuitry includes a conductive metal oxide comprising layer received over a substrate.

Abstract: A polyimide solution is supplied to a wafer and the wafer is rotated by means of a spin chuck, thereby forming a polyimide film on the wafer. An irradiator for irradiating a laser beam to a peripheral portion of the wafer W is provided. After the polyimide film is formed and side rinse is performed, a laser beam is irradiated to the peripheral portion to solidify the film at the peripheral portion. The solidified polyimide film forms a weir, thus preventing the polyimide solution which has not dried yet from flowing out toward a peripheral edge portion.

Abstract: The dark current defects in a charge couple device are reduced by employing a hydrogen anneal followed by depositing a silicon nitride barrier layer by RTCVD.

Abstract: A process for coating a tungsten carbide base material substrate with CVD diamond film includes carburization and gas-assisted vaporization of cobalt from the surface with simultaneous recrystallization of surface grains of tungsten carbide to change their stoichiometry for improved adherence. Also disclosed is a WC—Co cutting tool having a relatively fine WC grain size and being coated with adherent CVD diamond.

Abstract: A method for coating substrates having sides of the substrate with unequal adhesion properties includes the steps of non-symmetrically coating the substrate by coating a first side under a first set of coating conditions and coating a second side under a second set of operating conditions wherein the operating conditions used to coat each side are varied so as to compensate for the unequal adhesion properties of the sides.

Abstract: The present invention relates to a method of forming a level silicon oxide layer on a semiconductor wafer. The semiconductor wafer comprises a substrate having a first region containing no silicon nitride on its surface and a second region which is higher than the first region and contains a silicon nitride layer on its surface. The method comprises performing a cleaning process on the semiconductor wafer with an alkaline solution to uniform the deposition rate over the surface of the first region; and performing a deposition process employing ozone as a reactive gas with a flow capacity of 80-200 g/L to form a silicon oxide layer above the first and second regions wherein the deposition rate of the silicon oxide layer on the first region is higher than that on the second region and the silicon oxide layer above the first region is leveled with that above the second region after a predetermined period of time.

Abstract: Substrates are patterned with antibodies attached thereto at discrete locations from which absorption resistant coating is removed by selectively controlled mechanical scribing contact to avoid chemical removal so as to decrease fabrication costs and increase fabrication speed.

Abstract: Wear-resistant edge layer for titanium and its alloys which can be subjected to high loads and has a low coefficient of friction. The wear-resistant edge layer includes a hard amorphous carbon layer, an intermediate layer, and a laser gas alloyed layer. The wear-resistant edge layer may include a 200 to 400 nm thick hard amorphous carbon layer, a 50 to 200 nm thick intermediate layer, and a 0.3 to 2.0 mm thick laser gas alloyed layer. The laser gas alloyed layer may include precipitated titanium nitride needles and have a hardness between 600 HV0.1 and 1400 HV0.1. Process for producing a wear resistant edge layer on a substrate. The process includes forming a laser gas alloyed layer by melting a surface of a substrate, applying an intermediate layer by Laser-Arc, and depositing a hard amorphous carbon layer on the intermediate layer by Laser-Arc.

Abstract: A radiofrequency plasma reactor (1) for the treatment of substantially large sized substrates is disclosed, comprising between the electrodes (3, 5) of the plasma reactor a solid or gaseous dielectric layer (11) having a non planar-shaped surface-profile, said profile being defined for compensating a process non uniformity in the reactor or generating a given distribution profile.

Abstract: In this impurity eliminating apparatus, a mounting stand on which a wafer is mounted and a casing which confronts the mounting stand are provided in a container. A lower face of the casing consists of quartz glass. Inside the casing, an irradiating body for irradiating ultraviolet rays toward the wafer on the mounting stand is provided. The casing is full of inactive gas atmosphere supplied from an inactive gas supply pipe. The atmosphere above the wafer is exhausted from one side by an exhauster. Following the treatment by the impurity eliminating apparatus with the above structure, coating treatment with a treatment solution for forming a SOG film is performed. Thus, organic substances on the surface of the wafer is eliminated to form the SOG film.

Abstract: According to the present invention there is now provided a body of cemented carbide or cermets coated with at least one diamond layer. The diamond layer is smooth on all sides of the body with an Ra<1 &mgr;m. According to the present invention there is also provided a method for reactive ion etching of a diamond layer on a complex shape body where the etching is efficient at all sides of the body exposed to the plasma. The etching is made using a C— or oxygen-containing plasma with the possibility of etching of a diamond layer covered by an outer layer of preferably a Si containing material.

Abstract: The invention relates to a storage box for an object that is to be protected from physicochemical contamination. The storage box is intended to have low weight, good mechanical strength, a good electrical condition, with a low degassing rate in time with prevention of diffusion of gasses from the external atmosphere into the interior of the box. The inner and/or outer surface of the box's walls are coated with at least one protective layer. The box may be used to store silicon wafers.

Abstract: A method and system of reducing the permanent accumulated deformation of a deflectable member of a micromechanical device through thermal stabilization. The accumulated deformation is due to the repeated bending or twisting of a flexible component of the micromechanical deice typically the repetitive deformation of a flexible hinge connecting a rigid member to substrate. After the device is fabricated, passivated (316), and packaged (322), the packaged device is baked (326) at a temperature of at least 120° C. A 150° C. bake for 12 to 16 hours is preferred. Lower temperatures required longer baking periods.

Abstract: A method for processing a substrate having an aluminum neodymium-containing layer is disclosed. The aluminum neodymium-containing layer has residual chlorine proximate to its etch surface. The method includes providing a first gas chemistry including HBr and SF6 which supplies a first plurality of fluorine ions, forming a first plasma from said first gas chemistry, passivating the etch surface of the aluminum neodymium-containing layer with the first plasma to cause a second plurality of fluorine ions to replace a first portion of the residual chlorine. This second plurality of fluorine ions is a subset of the first plurality of fluorine ions.

Abstract: A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.

Abstract: A pretreatment method for use in manufacturing an improved optical component comprises (i) providing a polymeric optical substrate; and (ii) exposing the polymeric optical substrate to electromagnetic energy having a wavelength of about 30 nm to about 350 nm. The exposure of the polymeric optical substrate to the electromagnetic energy substantially improves adhesion between the substrate and an optical coating deposited onto the substrate following pretreatment. The invention addresses the significant need for coated plastic optics by providing a method to achieve reliable adhesion of optical coatings placed on polymeric optical substrates. Specifically, this invention enables improved adhesion for even highly curved or shaped parts which have been historically more difficult to coat. The pretreatment method is particularly useful for molded substrates such as molded polymethylmethacrylate.

Abstract: A method for mask-free molecular or atomic patterning of surfaces of reactive solids is disclosed. A molecular-scale pattern of adsorbate molecules is used in place of the conventional macroscopic "mask". Molecules adsorb at surfaces in patterns, governed by the structure of the surface, the chemical nature of the adsorbate, and the adsorbate coverage at the surface. The surface is patterned and then marked or imprinted with the pattern by inducing localized chemical reaction between adsorbate molecules and the surface of the solid, resulting in an imprint being formed in the vicinity of the adsorbate molecules. In one aspect of the invention, photoinduced reaction of the patterned adsorbate leads to patterned photoreaction with the surface.

Abstract: A method for coating substrates having sides of the substrate with unequal adhesion properties includes the steps of non-symmetrically coating the substrate by coating a first side under a first set of coating conditions and coating a second side under a second set of operating conditions wherein the operating conditions used to coat each side are varied so as to compensate for the unequal adhesion properties of the sides.

Abstract: An ion beam deposition method is provided for manufacturing a coated substrate with improved abrasion resistance, and improved lifetime. According to the method, the substrate is first chemically cleaned to remove contaminants. In the second step, the substrate is inserted into a vacuum chamber, and the air in said chamber is evacuated. In the third step, the substrate surface is bombarded with energetic ions to assist in the removal of residual hydrocarbons and surface oxides, and to activate the surface. Alter After the substrate surface has been sputter-etched, a protective, abrasion-resistant coating is deposited by ion beam deposition. The ion beam-deposited coating may contain one or more layers. Once the chosen thickness of the coating has been achieved, the deposition process on the substrates is terminated, the vacuum chamber pressure is increased to atmospheric pressure, and the coated substrate products having improved abrasion-resistance are removed from the vacuum chamber.