Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

Abstract: An apparatus for manufacturing a display apparatus includes: a chamber; a head unit configured to supply a process gas and a cleaning gas to an inside of the chamber; which has a storage space where the process gas or the cleaning gas is temporarily stored, and including a nozzle connected to the storage space and configured to guide the process gas or the cleaning gas from the storage space to the inside of the chamber; a susceptor unit arranged to face the head unit and on which a substrate is placeable; a cleaning gas supply unit connected to the head unit and configured to plasmarize the cleaning gas and supply the cleaning gas that is plasmarized to the head unit; and a cleaning gas ejection unit connected to the cleaning gas supply unit and configured to supply the cleaning gas to at least two portions of the storage space.

Abstract: A manufacturing method for an electrode of a high-temperature piezoelectric element, comprises: coating traditional conductive slurry on surfaces of a molded piezoelectric material (1); then polarizing the piezoelectric material (1); and then removing the coating of conductive slurry (2) on the surfaces there of, and connecting the piezoelectric material to outside electrode lead wires (3) to output a signal generated by piezoelectric effect thereof. A structure of a high-temperature piezoelectric element, comprises polarized piezoelectric material (1), wherein the coating of metallic conductive slurry (2) is removed from the surfaces of the polarized piezoelectric material (1) and the surfaces of the polarized piezoelectric material (1) is connected to electrode lead wires (3) to output a signal generated by piezoelectric effect thereof.

Abstract: Techniques for removing material from a substrate are provided. A laser beam is focused at a distance from the surface to be treated. A gas is provided at the focus point. The gas is dissociated using the laser energy to generate gas plasma. The substrate is then brought in contact with the gas plasma to enable material removal.

Abstract: The present disclosure provides a plasma processing apparatus, including: a processing chamber; an oscillator configured to output high-frequency power; a power supply unit configured to supply the high-frequency power from a specific plasma generating location into the processing chamber; a magnetic field forming unit provided outside the processing chamber and configured to forming a magnetic field at least at the specific plasma generating location; and a control unit configured to control the magnetic field formed by the magnetic field forming unit such that a relationship between an electron collision frequency fe of plasma generated in the processing chamber and a cyclotron frequency fc is fc>fe.

Abstract: A piezoelectric device includes a nanoimprinted film which is made from a ferroelectric polymer having a first conformation state and coated on a substrate. The ferroelectric polymer is heated at a temperature between a Curie point (Tc) and a melting point (Tm) of the ferroelectric polymer to cause a change in conformation of the ferroelectric polymer from the first conformation state to a second conformation state, and is then subjected to a nanoimprinting process at an imprinting temperature lower than Tc to cause a change in conformation of the ferroelectric polymer from the second conformation state to a third conformation state that is different from the first conformation state, thereby obtaining the nanoimprinted film.

Abstract: A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a predetermined element-containing gas to the substrate; supplying a carbon-containing gas and a plasma-excited inert gas to the substrate; supplying an oxidizing gas to the substrate; and supplying a nitriding gas to the substrate.

Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.

Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.

Abstract: A material is deposited onto a substrate by exposing the substrate to a metal-containing precursor to adsorb metal atoms of the metal-containing precursor to the substrate. The substrate injected with the metal-containing precursor is exposed to an organic precursor to deposit a layer of material by a reaction of the organic precursor with the metal atoms adsorbed to the substrate. The substrate is exposed to radicals of a reducing agent to increase reactivity of the material deposited on the substrate. The radicals of the reducing agent are produced by applying a voltage differential with electrodes to a gas such as hydrogen. The substrate may be exposed to radicals before and/or after exposing the substrate to the organic precursor. The substrate may be sequentially exposed to two or more different organic precursors. The material deposited on the substrate may be a metalcone such as Alucone, Zincone, Zircone, Titanicone, or Nickelcone.

Abstract: Provided is an electroconductive member for electrophotography, having a fiber layer on the outer peripheral surface of an electroconductive substrate, the electroconductive member having good adhesion property between the electroconductive substrate and the fiber layer. Specifically, provided is a method of producing an electroconductive member for electrophotography, the electroconductive member comprising an electroconductive substrate; and a fiber layer thereon, the fiber layer comprising fibers which have an average fiber diameter of from 0.01 ?m to 40 ?m, and are adhered to an outer peripheral surface of the electroconductive substrate, the method comprising the steps of: producing the fibers in a space between a nozzle and the outer peripheral surface of the electroconductive substrate by ejecting a liquid containing a raw material for the fibers from the nozzle toward the electroconductive substrate; and adhering the fibers to the outer peripheral surface of the electroconductive substrate.

Abstract: A method of increasing a work function of an electrode is provided. The method comprises obtaining an electronegative species from a precursor using electromagnetic radiation and reacting a surface of the electrode with the electronegative species. An electrode comprising a functionalized substrate is also provided.

Abstract: The invention relates to a process for depositing an anti-fouling top coat onto the outermost coating layer of a coated optical article, comprising the following steps: a) providing an optical article having two main faces, at least one of which being coated with an outermost layer; b) treating said outermost layer with energetic species resulting in surface physical attack and/or chemical modification; and c) vacuum evaporating a liquid coating material for an anti-fouling top coat by means of an evaporation device, resulting in the deposition of the evaporated coating material onto the treated outermost layer of the optical article, wherein prior to the vacuum evaporation step of the liquid coating material, said liquid coating material has been treated with energetic species.

Abstract: Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.

Abstract: The present invention provides a method of preparing a separator for a lithium secondary battery, comprising: forming a porous coating layer on at least one surface of a porous substrate, the porous coating layer comprising inorganic particles; bringing polymer particles into electric charging to obtain electrically charged polymer particles; transferring the electrically charged polymer particles on the top surface the porous coating layer to form a functional coating layer; and fixing the functional coating layer with heat and pressure, a separator prepared by the method, and a lithium secondary battery comprising the separator.

Abstract: The present invention provides a method of coating a substrate for a lithium secondary battery with inorganic particles, comprising charging the inorganic particles to form charged inorganic particles; transferring the charged inorganic particles on the substrate for a lithium secondary battery to form a coating layer; and fixing the coating layer with heat and pressure. Such a coating method according to one embodiment of the present invention uses electrostatic force without the addition of a solvent, and therefore, non use of a solvent can result in cost-reducing effects since there is no burden on the handling and storing of the solvent, and since a drying procedure after slurry coating is not needed, it allows for the preparation of a lithium secondary battery in a highly effective and rapid manner.

Abstract: A method for producing, by means of plasma, nanostructured thin layers particularly of the hierarchically organized type, and an apparatus for implementing the method, are described. At least a first chamber (10) is provide in which are present an injector (14) of a reagent gas, means (31, 31?) for feeding inert gases, and an antenna (16) for the creation of a plasma in said first chamber. Enclosing said first chamber is a second chamber (11) to which a pumping system is connected, containing a housing for the substrate (35) on which the nanostructured film is produced. A wall (12) separates said first chamber from said second chamber and has at least one opening (13). The injector and antenna are arranged in the first chamber with a geometry such that the distance between the outlet of said injector is at a distance of no more than 5 cm from the plane of the surface of said antenna farther from said wall, and said surface is at a distance of no more than 5 cm from said opening.

Abstract: A method for depositing a particle on a work piece is disclosed. The housing is coupled to the work piece to form a chamber and a separation distance between a surface of the work piece and a surface of the housing is controlled using a coupling device. A working gas having a particle entrained therein is directed within the chamber to deposit the particle at the work piece. The coupling between the housing and the work piece may be a slidable coupling. The coupling device may include an air-bearing surface or a gasketed coupling.

Abstract: A substrate is treated with a plasma by passing a gas through a first strong electrical field to form a plasma having active species and ionized species, passing at least a portion of said active species and ionized species into a second, weaker electrical field to generate a second but weaker plasma generation zone. Active species formed in said first plasma or said second plasma impinge onto the substrate to perform the desired treatment. The process allows a greater concentration of active species to reach the substrate than can be formed by the second plasma alone, while reducing arcing, maintaining a low gas temperature and providing other benefits.

Abstract: A process for depositing a film onto a substrate (2), which comprises in particular introducing a substrate (2) into a reaction chamber (6, 106, 206), in which at least two electrodes (10, 110, 210) are placed. A high-frequency electrical voltage is generated, said voltage being such that it generates filamentary plasma (12, 112, 212) between the two electrodes (10, 110, 210). An adjustable inductor (L) placed in parallel with the inductor of the installation generating the electrical voltage is employed so as to reduce the phase shift between the voltage and the current generated and to increase the time during which the current flows in the plasma (12, 112, 212).

Abstract: A plasma nozzle supplies a plasmatized electric discharge gas, and a first supply section in a flow regulator which is interposed between the plasma nozzle and a base member supplies a first liquid-phase raw material. A second supply section which is separate from the first supply section supplies a second liquid-phase raw material. The first liquid-phase raw material which is activated by a plasmatized electric discharge gas and deposited on the base member while in a liquid phase is caused to interact with the second liquid-phase raw material which is activated by the plasmatized electric discharge gas, and solidified into a film on the base member.

Abstract: A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen.

Abstract: A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

Abstract: A plasma processing system having at least one processing chamber comprising at least two sub-chambers is provided. The two plasma sub-chambers are in plasma flow or gas flow communication through a passage, which is controlled by a gate. The gate may be operated to allow plasma migration between the two sub-chambers to occur at different conductance rates. In one example, the gate comprises two plates with openings through the plates. At least one of the plates may be rotatable relative to the other plates to govern the conductance rate of the plasma from one sub-chamber to the other sub-chamber.

Abstract: A method for depositing a thin film for a magnetic recording medium includes the steps of placing a substrate for a recording medium having a magnetic recording layer thereon on a substrate holder rotatably arranged within a film deposition chamber; and supplying a plasma beam from a plasma beam formation portion to the film deposition chamber so as to form a thin film of ta-C on the magnetic recording layer. In supplying the plasma beam, an inclination angle formed by a normal line to a surface of the magnetic recording layer and a plane orthogonal to a direction of incidence of the plasma beam is changed from a minimum inclination angle to a maximum inclination angle according to an increase in film thickness of the ta-C thin film.

Abstract: A method and apparatus for forming an electrochemical layer of a thin film battery is provided. A precursor mixture comprising electrochemically active precursor particles dispersed in a carrying medium is provided to a processing chamber and thermally treated using a combustible gas mixture also provided to the chamber. The precursor is converted to nanocrystals by the thermal energy, and the nanocrystals are deposited on a substrate. A second precursor may be blended with the nanocrystals as they deposit on the surface to enhance adhesion and conductivity.

Abstract: Enhanced corrosion resistance is achieved in a coating by using a germanium-containing precursor and hollow cathode techniques to form a first layer directly on the surface of a workpiece, prior to forming an outer layer, such as a layer of diamond-like carbon (DLC). The use of a germanium or germanium-carbide precursor reduces film stress and enables an increase in the thickness of the subsequently formed DLC. Germanium incorporation also reduces the porosity of the layer. In one embodiment, a cap layer containing germanium is added after the DLC in order to further reduce the susceptibility of the coating to chemical penetration from the top.

Abstract: A method for producing, by means of plasma, nanostructured thin layers particularly of the hierarchically organized type, and an apparatus for implementing the method, are described. At least a first chamber (10) is provide in which are present an injector (14) of a reagent gas, means (31, 31?) for feeding inert gases, and an antenna (16) for the creation of a plasma in said first chamber. Enclosing said first chamber is a second chamber (11) to which a pumping system is connected, containing a housing for the substrate (35) on which the nanostructured film is produced. A wall (12) separates said first chamber from said second chamber and has at least one opening (13). The injector and antenna are arranged in the first chamber with a geometry such that the distance between the outlet of said injector is at a distance of no more than 5 cm from the plane of the surface of said antenna farther from said wall, and said surface is at a distance of no more than 5 cm from said opening.

Abstract: The invention relates to a method for priming a substrate by contacting the substrate with a primer fed from a primer source and depositing the primer on the substrate. Compared to other priming methods, the claimed priming gives better results because the deposition is carried out electrostatically.

Abstract: Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.

Abstract: A system and process for the formation of thin film materials. The process includes forming a plasma from a first material stream and allowing the plasma to evolve in space and/or time to extinguish species that are detrimental to the quality of the thin film material. After the plasma evolves to an optimum state, a second material stream is injected into the deposition chamber to form a composite plasma that contains a distribution of species more conducive to formation of a high quality thin film material. The system includes a deposition chamber having a plurality of delivery points for injecting two or more streams into a plasma region. The delivery points are staggered in space to permit an upstream plasma formed from a first material stream deposition source material to evolve before combining a downstream material stream with the plasma.

Abstract: In order to produce a coating on a substrate, the substrate is placed adjacent to a target. Material is cold ablated off the target by focusing a number of consecutive laser pulses on the target, thus producing a number of consecutive plasma fronts that move at least partly to the direction of said substrate. The time difference between said consecutive laser pulses is so short that constituents resulting from a number of consecutive plasma fronts form a nucleus on a surface of the substrate where a mean energy of said constituents allows the spontaneous formation of a crystalline structure.

Abstract: The formation of a barrier layer within individual channels or cavities of a microfluidic device is described. The barrier layer is effected through a gas phase deposition process, desirably implemented in a plasma environment using a gas plasma reactor. Judicious selection of a precursor compound used within the gas plasma reactor can provide for generation of a layer on the individual surfaces. Desirably the surface or barrier layer is generated through the chemical adsorption of a metalloid oxide such as a silicon oxide layer on the surface of the individual channels or cavities.

Abstract: Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.

Abstract: A method for chemical vapor deposition of a polymer film onto a substrate (6), includes the following two separate, consecutive steps:—a step for the photon activation of the gas phase wherein photon activation energy (42, 43) is provided to at least one gaseous polymer precursor that is present in a mainly gaseous composition, and—a chemical vapor deposition step wherein the activated gaseous polymer precursor, from the photon activation step, is deposited onto a substrate (6) so as to form a polymer film on the substrate, the total gas phase pressure ranging from 102 to 105 Pa. A device (1) for using such a method is also described.

Abstract: Methods for supplying one or more vapors, under reduced pressure, to an environment are provided. The vapor may comprise at least one polymerizable component. In some cases, at least two components may be combined to form the vapor. The components may be provided as separate vapor streams, which may be combined and homogenized. Methods of the invention may also be useful in the deposition of materials on the surface of a substrate. In some cases, the material may form a layer, such as a polymer layer, on the surface of a substrate. The present invention may be useful in applications that require the formation of homogeneous films on the surface of a substrate.

Abstract: Apparatus, methods, and systems for sorting nanostructures, such as nanodots or nanotubes, are described. Sorting the nanostructures removes remnants of the nanotube fabrication from a mixture or bundle of material. The sorting activity may include suspending the mixture in a plasma to separate nanostructures and remnant material. A motive force, such as gas flow or laser, can be applied to the suspended nanostructures and remnants to move larger material out of the plasma, leaving smaller material trapped in the plasma. Additional embodiments are disclosed.

Abstract: Apparatuses and techniques for fabricating a structure from nanoparticles are provided.

Abstract: Disclosed herein is a method of fabricating a high temperature superconducting film in a vacuum chamber through auxiliary cluster beam spraying using an evaporation method, wherein a high temperature superconducting material is deposited on a substrate in a vapor state by evaporating the high temperature superconducting material, and at the same time, a cluster beam material is formed into gas atoms by heating the cluster beam material charged in a housing, and the formed gas atoms pass through a nozzle of an inlet of the housing and then are sprayed and grown on the substrate in the form of the cluster beam, thereby forming pinning centers in the high temperature superconducting film.

Abstract: This invention relates to a method of functionalizing a powdered substrate. The method comprises the following steps, which method comprises passing a gas into a means for forming excited and/or unstable gas species, typically an atmospheric pressure plasma or the like and treating the gas such that, upon leaving said means, the gas comprises excited and/or unstable gas species which are substantially free of electric charge. The gas comprising the excited and/or unstable gas species which are substantially free of electric charge is then used to treat a powdered substrate and a functionalizing precursor in a downstream region external to the means for forming excited and/or unstable gas, wherein neither the powdered substrate nor the functionalizing precursor have been subjected to steps (i) and (ii) and wherein said functionalizing precursor is introduced simultaneously with or subsequent to introduction of the powdered substrate. Preferably the method takes place in a fluidized bed.

Abstract: Power cable shields having a monomolecular carbon-based film are placed around electrical power lines to reduce power losses and enhance transmission of electricity. The shield may be a solid metal tube or a material wrapped around a power cable. The monomolecular carbon-based film is deposited on the shield, for example, using a reactor that includes a bed of silica coupled to a diesel engine to produce a stream of dehydrated hydroxyl radicals that become hydrated due to reactions of supercritical water and muon methyl radicals. A shielded electrical power includes a shield positioned around and fully enclosing the power line to prevent atmospheric loss of electrical power. An existing power line can be retrofitted by placing one or more surface treated sleeves around the existing power line. Periodically spaced apart magnets can be positioned within the electrical wire shield to further boost power and voltage through the electrical power line.

Abstract: A deposition system and process for the formation of thin film materials. In one embodiment, the process includes forming an initial plasma from a first material stream and allowing the plasma to evolve in space and/or time to extinguish species that are detrimental to the quality of the thin film material. After the initial plasma evolves to an optimum state, a second material stream is injected into the deposition chamber to form a composite plasma that contains a distribution of species more conducive to formation of a high quality thin film material. The deposition system includes a deposition chamber having a plurality of delivery points for injecting two or more streams (source materials or carrier gases) into a plasma region. The delivery points are staggered in space to permit an upstream plasma formed from a first material stream deposition source material to evolve before combining a downstream material stream with the plasma. Injection of different material streams is also synchronized in time.

Abstract: A direct vapor deposition (DVD) apparatus and method is taught, that provides a carrier gas flow entraining vapor atoms for the coating of regions on a substrate that are not in line-of-sight. The degree of non line-of-sight (NLOS) coating, hence thickness uniformity around the substrate is a sensitive function of the flow conditions. For a fixed background pressure in the region of deposition, an increase in the uniformity of the coating thickness is accomplished as the flow velocity is reduced. This improvement in uniformity is a result of an increase in the fraction of vapor atoms which deposit in NLOS positions on the substrate such as backside (21) of fiber (65) as indicated by vapor streamlines (51). Vapor impact width (VIW) is the width of the vapor flux impacting on some area of the fiber. Front side coating (FSC) width is the vapor width of atoms impacting on the substrate frontside (22).

Abstract: A piezo-electric film forming method includes (1) a first moving step of moving a nozzle with respect to a substrate along a first direction to form a first piezo-electric band extending along the first direction, (2) a measuring step of measuring thickness distribution along the width of the first piezo-electric band, (3) a calculating step of calculating a shifting distance based on the thickness distribution, (4) a shifting step of moving the nozzle with respect to the substrate along a second direction by the calculated shifting distance, wherein the second direction intersects with the first direction, and (5) a second moving step of moving the nozzle with respect to the substrate along the first direction to form a second piezo-electric band extending along the first direction. The piezo-electric film is formed such that the first piezo-electric band and the second piezo-electric band are overlapped.

Abstract: The invention relates to a method for applying a film to a planar, especially air-impermeable substrate, comprising the steps: (a) feeding the planar substrate in a direction of feed towards an application device, (b) applying a film output by the application device to the planar substrate, and (c) sharply deflecting the planar substrate together with the film that is in contact therewith to a deflection area in a discharge direction different from the direction of feed. The invention also relates to a deflecting element for deflecting a planar substrate. Said element comprises at least one guiding surface adapted to guide a planar substrate and an additional guiding surface, forming an edge for sharply deflecting a planar substrate with the first guiding surface.

Abstract: A method of forming a thermally insulating layer system on a metallic substrate surface is disclosed.

Abstract: A method of forming a coating on a powdered substrate, which method comprises introducing an atomized liquid and/or solid coating forming material and separately transporting a powdered substrate to be coated into an atmospheric plasma discharge and/or an ionized gas stream resulting therefrom, and exposing the powdered substrate to the atomized liquid and/or solid coating forming material.

Abstract: The invention is directed to a method for depositing particles on a substrate and to a fibrous web comprising deposited particles. A method is provided according to which particles are provided on a surface activated substrate by means of a plasma treatment. The method comprises the subsequent steps of -providing particles, preferably coating said particles; -subjecting said particles to a first plasma treatment before being deposited on said substrate; and -depositing said particles on said surface of said substrate, preferably using a second plasma treatment.

Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Abstract: Disclosed is a process for making a composite material that contains core-shell structured nanoparticles. The process includes providing a precursor in the form of a powder a liquid and/or a vapor of a liquid that contains a core material and a shell material, and suspending the precursor in an aerosol gas to produce an aerosol containing the precursor. In addition, the process includes providing a plasma that has a hot zone and passing the aerosol through the hot zone of the plasma. As the aerosol passes through the hot zone of the plasma, at least part of the core material and at least part of the shell material in the aerosol is vaporized. Vapor that contains the core material and the shell material that has been vaporized is removed from the hot zone of the plasma and allowed to condense into core-shell structured nanoparticles.