Electric Discharge (e.g., Corona, Glow Discharge, Etc.) Patents (Class 427/562)
  • Patent number: 9790090
    Abstract: Techniques for removing material from a substrate are provided. A laser beam is focused at a distance from the surface to be treated. A gas is provided at the focus point. The gas is dissociated using the laser energy to generate gas plasma. The substrate is then brought in contact with the gas plasma to enable material removal.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: October 17, 2017
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: Selim Elhadj, Isaac Louis Bass, Gabriel Mark Guss, Manyalibo J. Matthews
  • Patent number: 9659754
    Abstract: The present disclosure provides a plasma processing apparatus, including: a processing chamber; an oscillator configured to output high-frequency power; a power supply unit configured to supply the high-frequency power from a specific plasma generating location into the processing chamber; a magnetic field forming unit provided outside the processing chamber and configured to forming a magnetic field at least at the specific plasma generating location; and a control unit configured to control the magnetic field formed by the magnetic field forming unit such that a relationship between an electron collision frequency fe of plasma generated in the processing chamber and a cyclotron frequency fc is fc>fe.
    Type: Grant
    Filed: November 5, 2013
    Date of Patent: May 23, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Yoshikawa, Yoshio Susa, Naoki Matsumoto, Peter L. G. Ventzek
  • Patent number: 9324932
    Abstract: A piezoelectric device includes a nanoimprinted film which is made from a ferroelectric polymer having a first conformation state and coated on a substrate. The ferroelectric polymer is heated at a temperature between a Curie point (Tc) and a melting point (Tm) of the ferroelectric polymer to cause a change in conformation of the ferroelectric polymer from the first conformation state to a second conformation state, and is then subjected to a nanoimprinting process at an imprinting temperature lower than Tc to cause a change in conformation of the ferroelectric polymer from the second conformation state to a third conformation state that is different from the first conformation state, thereby obtaining the nanoimprinted film.
    Type: Grant
    Filed: June 20, 2013
    Date of Patent: April 26, 2016
    Assignee: National Tsing Hua University
    Inventors: Chien-Chong Hong, Alan Chen, Tong-Miin Liou
  • Patent number: 9218955
    Abstract: A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a predetermined element-containing gas to the substrate; supplying a carbon-containing gas and a plasma-excited inert gas to the substrate; supplying an oxidizing gas to the substrate; and supplying a nitriding gas to the substrate.
    Type: Grant
    Filed: September 16, 2013
    Date of Patent: December 22, 2015
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Ryota Sasajima, Yoshinobu Nakamura, Kazuyuki Okuda
  • Patent number: 9096933
    Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
    Type: Grant
    Filed: April 15, 2014
    Date of Patent: August 4, 2015
    Assignee: Aixtron, Inc.
    Inventors: Stephen E. Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
  • Patent number: 9096932
    Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
    Type: Grant
    Filed: April 14, 2014
    Date of Patent: August 4, 2015
    Assignee: Aixtron, Inc.
    Inventors: Stephen E. Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
  • Publication number: 20150148557
    Abstract: A material is deposited onto a substrate by exposing the substrate to a metal-containing precursor to adsorb metal atoms of the metal-containing precursor to the substrate. The substrate injected with the metal-containing precursor is exposed to an organic precursor to deposit a layer of material by a reaction of the organic precursor with the metal atoms adsorbed to the substrate. The substrate is exposed to radicals of a reducing agent to increase reactivity of the material deposited on the substrate. The radicals of the reducing agent are produced by applying a voltage differential with electrodes to a gas such as hydrogen. The substrate may be exposed to radicals before and/or after exposing the substrate to the organic precursor. The substrate may be sequentially exposed to two or more different organic precursors. The material deposited on the substrate may be a metalcone such as Alucone, Zincone, Zircone, Titanicone, or Nickelcone.
    Type: Application
    Filed: November 18, 2014
    Publication date: May 28, 2015
    Inventors: Sang In Lee, Chang Wan Hwang
  • Publication number: 20150093517
    Abstract: Provided is an electroconductive member for electrophotography, having a fiber layer on the outer peripheral surface of an electroconductive substrate, the electroconductive member having good adhesion property between the electroconductive substrate and the fiber layer. Specifically, provided is a method of producing an electroconductive member for electrophotography, the electroconductive member comprising an electroconductive substrate; and a fiber layer thereon, the fiber layer comprising fibers which have an average fiber diameter of from 0.01 ?m to 40 ?m, and are adhered to an outer peripheral surface of the electroconductive substrate, the method comprising the steps of: producing the fibers in a space between a nozzle and the outer peripheral surface of the electroconductive substrate by ejecting a liquid containing a raw material for the fibers from the nozzle toward the electroconductive substrate; and adhering the fibers to the outer peripheral surface of the electroconductive substrate.
    Type: Application
    Filed: September 19, 2014
    Publication date: April 2, 2015
    Inventors: Norifumi Muranaka, Satoru Yamada, Kazuhiro Yamauchi, Yuichi Kikuchi, Tetsuo Hino
  • Publication number: 20150069354
    Abstract: A method of increasing a work function of an electrode is provided. The method comprises obtaining an electronegative species from a precursor using electromagnetic radiation and reacting a surface of the electrode with the electronegative species. An electrode comprising a functionalized substrate is also provided.
    Type: Application
    Filed: April 15, 2013
    Publication date: March 12, 2015
    Inventors: Michael Helander, Jacky Qiu, Zhibin Wang, Zheng-Hong Lu
  • Patent number: 8945684
    Abstract: The invention relates to a process for depositing an anti-fouling top coat onto the outermost coating layer of a coated optical article, comprising the following steps: a) providing an optical article having two main faces, at least one of which being coated with an outermost layer; b) treating said outermost layer with energetic species resulting in surface physical attack and/or chemical modification; and c) vacuum evaporating a liquid coating material for an anti-fouling top coat by means of an evaporation device, resulting in the deposition of the evaporated coating material onto the treated outermost layer of the optical article, wherein prior to the vacuum evaporation step of the liquid coating material, said liquid coating material has been treated with energetic species.
    Type: Grant
    Filed: November 4, 2005
    Date of Patent: February 3, 2015
    Assignee: Essilor International (Compagnie Generale d'Optique)
    Inventor: Gérald Fournand
  • Patent number: 8877300
    Abstract: Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: November 4, 2014
    Assignee: Veeco ALD Inc.
    Inventor: Sang In Lee
  • Publication number: 20140287327
    Abstract: The present invention provides a method of coating a substrate for a lithium secondary battery with inorganic particles, comprising charging the inorganic particles to form charged inorganic particles; transferring the charged inorganic particles on the substrate for a lithium secondary battery to form a coating layer; and fixing the coating layer with heat and pressure. Such a coating method according to one embodiment of the present invention uses electrostatic force without the addition of a solvent, and therefore, non use of a solvent can result in cost-reducing effects since there is no burden on the handling and storing of the solvent, and since a drying procedure after slurry coating is not needed, it allows for the preparation of a lithium secondary battery in a highly effective and rapid manner.
    Type: Application
    Filed: June 9, 2014
    Publication date: September 25, 2014
    Inventors: Joo-Sung Lee, Jong-Hun Kim, Jeong-Min Ha, Bo-Kyung Ryu, Jin-Woo Kim
  • Publication number: 20140287294
    Abstract: The present invention provides a method of preparing a separator for a lithium secondary battery, comprising: forming a porous coating layer on at least one surface of a porous substrate, the porous coating layer comprising inorganic particles; bringing polymer particles into electric charging to obtain electrically charged polymer particles; transferring the electrically charged polymer particles on the top surface the porous coating layer to form a functional coating layer; and fixing the functional coating layer with heat and pressure, a separator prepared by the method, and a lithium secondary battery comprising the separator.
    Type: Application
    Filed: June 5, 2014
    Publication date: September 25, 2014
    Inventors: Joo-Sung Lee, Jong-Hun Kim
  • Patent number: 8795791
    Abstract: A method for producing, by means of plasma, nanostructured thin layers particularly of the hierarchically organized type, and an apparatus for implementing the method, are described. At least a first chamber (10) is provide in which are present an injector (14) of a reagent gas, means (31, 31?) for feeding inert gases, and an antenna (16) for the creation of a plasma in said first chamber. Enclosing said first chamber is a second chamber (11) to which a pumping system is connected, containing a housing for the substrate (35) on which the nanostructured film is produced. A wall (12) separates said first chamber from said second chamber and has at least one opening (13). The injector and antenna are arranged in the first chamber with a geometry such that the distance between the outlet of said injector is at a distance of no more than 5 cm from the plane of the surface of said antenna farther from said wall, and said surface is at a distance of no more than 5 cm from said opening.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: August 5, 2014
    Inventors: Claudia Riccardi, Moreno Piselli, Francesco Sirio Fumagalli, Fabio Di Fonzo, Carlo Enrico Bottani
  • Publication number: 20140199499
    Abstract: A method for depositing a particle on a work piece is disclosed. The housing is coupled to the work piece to form a chamber and a separation distance between a surface of the work piece and a surface of the housing is controlled using a coupling device. A working gas having a particle entrained therein is directed within the chamber to deposit the particle at the work piece. The coupling between the housing and the work piece may be a slidable coupling. The coupling device may include an air-bearing surface or a gasketed coupling.
    Type: Application
    Filed: August 20, 2013
    Publication date: July 17, 2014
    Applicant: International Business Machines Corporation
    Inventors: Theodore G. van Kessel, Brent A. Wacaser
  • Publication number: 20140178604
    Abstract: A substrate is treated with a plasma by passing a gas through a first strong electrical field to form a plasma having active species and ionized species, passing at least a portion of said active species and ionized species into a second, weaker electrical field to generate a second but weaker plasma generation zone. Active species formed in said first plasma or said second plasma impinge onto the substrate to perform the desired treatment. The process allows a greater concentration of active species to reach the substrate than can be formed by the second plasma alone, while reducing arcing, maintaining a low gas temperature and providing other benefits.
    Type: Application
    Filed: March 14, 2013
    Publication date: June 26, 2014
    Inventor: Gary S. Selwyn
  • Patent number: 8753723
    Abstract: A process for depositing a film onto a substrate (2), which comprises in particular introducing a substrate (2) into a reaction chamber (6, 106, 206), in which at least two electrodes (10, 110, 210) are placed. A high-frequency electrical voltage is generated, said voltage being such that it generates filamentary plasma (12, 112, 212) between the two electrodes (10, 110, 210). An adjustable inductor (L) placed in parallel with the inductor of the installation generating the electrical voltage is employed so as to reduce the phase shift between the voltage and the current generated and to increase the time during which the current flows in the plasma (12, 112, 212).
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: June 17, 2014
    Assignee: AGC Glass Europe
    Inventors: Eric Tixhon, Joseph Leclercq, Eric Michel
  • Patent number: 8673408
    Abstract: A plasma nozzle supplies a plasmatized electric discharge gas, and a first supply section in a flow regulator which is interposed between the plasma nozzle and a base member supplies a first liquid-phase raw material. A second supply section which is separate from the first supply section supplies a second liquid-phase raw material. The first liquid-phase raw material which is activated by a plasmatized electric discharge gas and deposited on the base member while in a liquid phase is caused to interact with the second liquid-phase raw material which is activated by the plasmatized electric discharge gas, and solidified into a film on the base member.
    Type: Grant
    Filed: May 27, 2011
    Date of Patent: March 18, 2014
    Assignee: Honda Motor Co., Ltd.
    Inventor: Shunichi Yorozuya
  • Patent number: 8580354
    Abstract: A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen.
    Type: Grant
    Filed: August 15, 2011
    Date of Patent: November 12, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Xinyu Fu, Jick M. Yu
  • Patent number: 8568572
    Abstract: A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.
    Type: Grant
    Filed: June 10, 2010
    Date of Patent: October 29, 2013
    Assignee: The Regents of the University of California
    Inventors: Andre Anders, Joakim Andersson
  • Publication number: 20130168352
    Abstract: A plasma processing system having at least one processing chamber comprising at least two sub-chambers is provided. The two plasma sub-chambers are in plasma flow or gas flow communication through a passage, which is controlled by a gate. The gate may be operated to allow plasma migration between the two sub-chambers to occur at different conductance rates. In one example, the gate comprises two plates with openings through the plates. At least one of the plates may be rotatable relative to the other plates to govern the conductance rate of the plasma from one sub-chamber to the other sub-chamber.
    Type: Application
    Filed: December 28, 2011
    Publication date: July 4, 2013
    Inventor: Andreas Fischer
  • Patent number: 8440269
    Abstract: A method for depositing a thin film for a magnetic recording medium includes the steps of placing a substrate for a recording medium having a magnetic recording layer thereon on a substrate holder rotatably arranged within a film deposition chamber; and supplying a plasma beam from a plasma beam formation portion to the film deposition chamber so as to form a thin film of ta-C on the magnetic recording layer. In supplying the plasma beam, an inclination angle formed by a normal line to a surface of the magnetic recording layer and a plane orthogonal to a direction of incidence of the plasma beam is changed from a minimum inclination angle to a maximum inclination angle according to an increase in film thickness of the ta-C thin film.
    Type: Grant
    Filed: May 18, 2009
    Date of Patent: May 14, 2013
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Katsunori Suzuki, Takeshi Watanabe
  • Patent number: 8399065
    Abstract: A method and apparatus for forming an electrochemical layer of a thin film battery is provided. A precursor mixture comprising electrochemically active precursor particles dispersed in a carrying medium is provided to a processing chamber and thermally treated using a combustible gas mixture also provided to the chamber. The precursor is converted to nanocrystals by the thermal energy, and the nanocrystals are deposited on a substrate. A second precursor may be blended with the nanocrystals as they deposit on the surface to enhance adhesion and conductivity.
    Type: Grant
    Filed: August 24, 2010
    Date of Patent: March 19, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Quanyuan Shang, Lu Yang, Karl M. Brown, Donald J. K. Olgado, Victor Pebenito, Hooman Bolandi, Tetsuya Ishikawa, Robert Z. Bachrach, Liang-Yuh Chen
  • Patent number: 8394197
    Abstract: Enhanced corrosion resistance is achieved in a coating by using a germanium-containing precursor and hollow cathode techniques to form a first layer directly on the surface of a workpiece, prior to forming an outer layer, such as a layer of diamond-like carbon (DLC). The use of a germanium or germanium-carbide precursor reduces film stress and enables an increase in the thickness of the subsequently formed DLC. Germanium incorporation also reduces the porosity of the layer. In one embodiment, a cap layer containing germanium is added after the DLC in order to further reduce the susceptibility of the coating to chemical penetration from the top.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: March 12, 2013
    Assignee: Sub-One Technology, Inc.
    Inventors: Andrew W. Tudhope, Thomas B. Casserly, Karthik Boinapally, Deepak Upadhyaya, William J. Boardman
  • Publication number: 20130017342
    Abstract: A method for producing, by means of plasma, nanostructured thin layers particularly of the hierarchically organized type, and an apparatus for implementing the method, are described. At least a first chamber (10) is provide in which are present an injector (14) of a reagent gas, means (31, 31?) for feeding inert gases, and an antenna (16) for the creation of a plasma in said first chamber. Enclosing said first chamber is a second chamber (11) to which a pumping system is connected, containing a housing for the substrate (35) on which the nanostructured film is produced. A wall (12) separates said first chamber from said second chamber and has at least one opening (13). The injector and antenna are arranged in the first chamber with a geometry such that the distance between the outlet of said injector is at a distance of no more than 5 cm from the plane of the surface of said antenna farther from said wall, and said surface is at a distance of no more than 5 cm from said opening.
    Type: Application
    Filed: November 30, 2010
    Publication date: January 17, 2013
    Applicants: POLITECNICO DI MILANO, UNIVERSITA' DEGLI STUDI DI MILANO BICOCCA
    Inventors: Claudia Riccardi, Moreno Piselli, Francesco Sirio Fumagalli, Fabio Di Fonzo, Carlo Enrico Bottani
  • Patent number: 8309184
    Abstract: The invention relates to a method for priming a substrate by contacting the substrate with a primer fed from a primer source and depositing the primer on the substrate. Compared to other priming methods, the claimed priming gives better results because the deposition is carried out electrostatically.
    Type: Grant
    Filed: June 14, 2005
    Date of Patent: November 13, 2012
    Assignee: Stora Enso Oyj
    Inventors: Tapani Penttinen, Kimmo Nevalainen, Isto Heiskanen, Kaj Backfolk, Minna Peltola, Ali Harlin
  • Patent number: 8304033
    Abstract: Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.
    Type: Grant
    Filed: April 23, 2009
    Date of Patent: November 6, 2012
    Assignee: TEL Epion Inc.
    Inventors: Martin D. Tabat, Matthew C. Gwinn, Robert K. Becker, Avrum Freytsis, Michael Graf
  • Publication number: 20120263886
    Abstract: A system and process for the formation of thin film materials. The process includes forming a plasma from a first material stream and allowing the plasma to evolve in space and/or time to extinguish species that are detrimental to the quality of the thin film material. After the plasma evolves to an optimum state, a second material stream is injected into the deposition chamber to form a composite plasma that contains a distribution of species more conducive to formation of a high quality thin film material. The system includes a deposition chamber having a plurality of delivery points for injecting two or more streams into a plasma region. The delivery points are staggered in space to permit an upstream plasma formed from a first material stream deposition source material to evolve before combining a downstream material stream with the plasma.
    Type: Application
    Filed: April 29, 2012
    Publication date: October 18, 2012
    Inventor: Stanford R. Ovshinsky
  • Publication number: 20120244032
    Abstract: In order to produce a coating on a substrate, the substrate is placed adjacent to a target. Material is cold ablated off the target by focusing a number of consecutive laser pulses on the target, thus producing a number of consecutive plasma fronts that move at least partly to the direction of said substrate. The time difference between said consecutive laser pulses is so short that constituents resulting from a number of consecutive plasma fronts form a nucleus on a surface of the substrate where a mean energy of said constituents allows the spontaneous formation of a crystalline structure.
    Type: Application
    Filed: October 4, 2010
    Publication date: September 27, 2012
    Applicant: PICODEON LTD OY
    Inventors: Reijo Lappalainen, Vesa Myllymäki, Jukka Häyrynen
  • Publication number: 20120219727
    Abstract: The formation of a barrier layer within individual channels or cavities of a microfluidic device is described. The barrier layer is effected through a gas phase deposition process, desirably implemented in a plasma environment using a gas plasma reactor. Judicious selection of a precursor compound used within the gas plasma reactor can provide for generation of a layer on the individual surfaces. Desirably the surface or barrier layer is generated through the chemical adsorption of a metalloid oxide such as a silicon oxide layer on the surface of the individual channels or cavities.
    Type: Application
    Filed: June 18, 2010
    Publication date: August 30, 2012
    Applicant: Dublin City University
    Inventors: Ram Prasad Gandhiraman, Lourdes Basabe-Desmonts, Asif Riaz, Luke Lee, Ivan Dimov, Jens Ducree, Stephen Michael Daniels
  • Publication number: 20120213945
    Abstract: Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.
    Type: Application
    Filed: February 15, 2012
    Publication date: August 23, 2012
    Applicant: SYNOS TECHNOLOGY, INC.
    Inventor: Sang In LEE
  • Publication number: 20120177844
    Abstract: A method for chemical vapor deposition of a polymer film onto a substrate (6), includes the following two separate, consecutive steps:—a step for the photon activation of the gas phase wherein photon activation energy (42, 43) is provided to at least one gaseous polymer precursor that is present in a mainly gaseous composition, and—a chemical vapor deposition step wherein the activated gaseous polymer precursor, from the photon activation step, is deposited onto a substrate (6) so as to form a polymer film on the substrate, the total gas phase pressure ranging from 102 to 105 Pa. A device (1) for using such a method is also described.
    Type: Application
    Filed: September 6, 2010
    Publication date: July 12, 2012
    Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFI, ESSILOR INTERNATIONAL (Compagnie Generale d'Optique
    Inventors: Claudine Biver, Francis Maury, Virginie Santucci, François Senocq, Sylvie Vinsonneau
  • Patent number: 8084102
    Abstract: Methods for supplying one or more vapors, under reduced pressure, to an environment are provided. The vapor may comprise at least one polymerizable component. In some cases, at least two components may be combined to form the vapor. The components may be provided as separate vapor streams, which may be combined and homogenized. Methods of the invention may also be useful in the deposition of materials on the surface of a substrate. In some cases, the material may form a layer, such as a polymer layer, on the surface of a substrate. The present invention may be useful in applications that require the formation of homogeneous films on the surface of a substrate.
    Type: Grant
    Filed: March 23, 2007
    Date of Patent: December 27, 2011
    Assignee: Sion Power Corporation
    Inventor: John D. Affinito
  • Publication number: 20110123726
    Abstract: Apparatus, methods, and systems for sorting nanostructures, such as nanodots or nanotubes, are described. Sorting the nanostructures removes remnants of the nanotube fabrication from a mixture or bundle of material. The sorting activity may include suspending the mixture in a plasma to separate nanostructures and remnant material. A motive force, such as gas flow or laser, can be applied to the suspended nanostructures and remnants to move larger material out of the plasma, leaving smaller material trapped in the plasma. Additional embodiments are disclosed.
    Type: Application
    Filed: February 2, 2011
    Publication date: May 26, 2011
    Inventor: Krupakar M. Subramanian
  • Publication number: 20110008549
    Abstract: Apparatuses and techniques for fabricating a structure from nanoparticles are provided.
    Type: Application
    Filed: July 10, 2009
    Publication date: January 13, 2011
    Applicant: Korea University Research and Business Foundation
    Inventor: Kwangyeol LEE
  • Patent number: 7838061
    Abstract: Disclosed herein is a method of fabricating a high temperature superconducting film in a vacuum chamber through auxiliary cluster beam spraying using an evaporation method, wherein a high temperature superconducting material is deposited on a substrate in a vapor state by evaporating the high temperature superconducting material, and at the same time, a cluster beam material is formed into gas atoms by heating the cluster beam material charged in a housing, and the formed gas atoms pass through a nozzle of an inlet of the housing and then are sprayed and grown on the substrate in the form of the cluster beam, thereby forming pinning centers in the high temperature superconducting film.
    Type: Grant
    Filed: January 12, 2007
    Date of Patent: November 23, 2010
    Assignee: Korea Electrotechnology Research Institute
    Inventors: Sang Soo Oh, Ho Seop Kim, Kyu Jung Song, Do Jun Youm, Sun Mi Lim, Yong Hwan Jung, Sang Moo Lee, Ye Hyun Jung, Jae Eun Yoo
  • Patent number: 7758928
    Abstract: This invention relates to a method of functionalizing a powdered substrate. The method comprises the following steps, which method comprises passing a gas into a means for forming excited and/or unstable gas species, typically an atmospheric pressure plasma or the like and treating the gas such that, upon leaving said means, the gas comprises excited and/or unstable gas species which are substantially free of electric charge. The gas comprising the excited and/or unstable gas species which are substantially free of electric charge is then used to treat a powdered substrate and a functionalizing precursor in a downstream region external to the means for forming excited and/or unstable gas, wherein neither the powdered substrate nor the functionalizing precursor have been subjected to steps (i) and (ii) and wherein said functionalizing precursor is introduced simultaneously with or subsequent to introduction of the powdered substrate. Preferably the method takes place in a fluidized bed.
    Type: Grant
    Filed: October 8, 2004
    Date of Patent: July 20, 2010
    Assignee: Dow Corning Corporation
    Inventors: Timothy Rex Bunce, Bhukandas Parbhoo, Pierre Chevalier
  • Publication number: 20100155132
    Abstract: Power cable shields having a monomolecular carbon-based film are placed around electrical power lines to reduce power losses and enhance transmission of electricity. The shield may be a solid metal tube or a material wrapped around a power cable. The monomolecular carbon-based film is deposited on the shield, for example, using a reactor that includes a bed of silica coupled to a diesel engine to produce a stream of dehydrated hydroxyl radicals that become hydrated due to reactions of supercritical water and muon methyl radicals. A shielded electrical power includes a shield positioned around and fully enclosing the power line to prevent atmospheric loss of electrical power. An existing power line can be retrofitted by placing one or more surface treated sleeves around the existing power line. Periodically spaced apart magnets can be positioned within the electrical wire shield to further boost power and voltage through the electrical power line.
    Type: Application
    Filed: March 3, 2009
    Publication date: June 24, 2010
    Inventor: Thomas C. Maganas
  • Publication number: 20100151149
    Abstract: A deposition system and process for the formation of thin film materials. In one embodiment, the process includes forming an initial plasma from a first material stream and allowing the plasma to evolve in space and/or time to extinguish species that are detrimental to the quality of the thin film material. After the initial plasma evolves to an optimum state, a second material stream is injected into the deposition chamber to form a composite plasma that contains a distribution of species more conducive to formation of a high quality thin film material. The deposition system includes a deposition chamber having a plurality of delivery points for injecting two or more streams (source materials or carrier gases) into a plasma region. The delivery points are staggered in space to permit an upstream plasma formed from a first material stream deposition source material to evolve before combining a downstream material stream with the plasma. Injection of different material streams is also synchronized in time.
    Type: Application
    Filed: December 12, 2008
    Publication date: June 17, 2010
    Inventor: Stanford R. Ovshinsky
  • Patent number: 7718222
    Abstract: A direct vapor deposition (DVD) apparatus and method is taught, that provides a carrier gas flow entraining vapor atoms for the coating of regions on a substrate that are not in line-of-sight. The degree of non line-of-sight (NLOS) coating, hence thickness uniformity around the substrate is a sensitive function of the flow conditions. For a fixed background pressure in the region of deposition, an increase in the uniformity of the coating thickness is accomplished as the flow velocity is reduced. This improvement in uniformity is a result of an increase in the fraction of vapor atoms which deposit in NLOS positions on the substrate such as backside (21) of fiber (65) as indicated by vapor streamlines (51). Vapor impact width (VIW) is the width of the vapor flux impacting on some area of the fiber. Front side coating (FSC) width is the vapor width of atoms impacting on the substrate frontside (22).
    Type: Grant
    Filed: April 25, 2003
    Date of Patent: May 18, 2010
    Assignee: University of Virginia Patent Foundation
    Inventors: Derek D. Hass, Douglas T. Queheillalt, Haydn N. G. Wadley
  • Patent number: 7713588
    Abstract: A piezo-electric film forming method includes (1) a first moving step of moving a nozzle with respect to a substrate along a first direction to form a first piezo-electric band extending along the first direction, (2) a measuring step of measuring thickness distribution along the width of the first piezo-electric band, (3) a calculating step of calculating a shifting distance based on the thickness distribution, (4) a shifting step of moving the nozzle with respect to the substrate along a second direction by the calculated shifting distance, wherein the second direction intersects with the first direction, and (5) a second moving step of moving the nozzle with respect to the substrate along the first direction to form a second piezo-electric band extending along the first direction. The piezo-electric film is formed such that the first piezo-electric band and the second piezo-electric band are overlapped.
    Type: Grant
    Filed: July 13, 2005
    Date of Patent: May 11, 2010
    Assignee: Brother Kogyo Kabushiki Kaisha
    Inventor: Motohiro Yasui
  • Patent number: 7691448
    Abstract: The invention relates to a method for applying a film to a planar, especially air-impermeable substrate, comprising the steps: (a) feeding the planar substrate in a direction of feed towards an application device, (b) applying a film output by the application device to the planar substrate, and (c) sharply deflecting the planar substrate together with the film that is in contact therewith to a deflection area in a discharge direction different from the direction of feed. The invention also relates to a deflecting element for deflecting a planar substrate. Said element comprises at least one guiding surface adapted to guide a planar substrate and an additional guiding surface, forming an edge for sharply deflecting a planar substrate with the first guiding surface.
    Type: Grant
    Filed: April 1, 2005
    Date of Patent: April 6, 2010
    Assignee: Nordson Corporation
    Inventors: Jurgen Steckelberg, Gerd Brockmann
  • Patent number: 7678428
    Abstract: A method of forming a thermally insulating layer system on a metallic substrate surface is disclosed.
    Type: Grant
    Filed: March 18, 2003
    Date of Patent: March 16, 2010
    Assignee: Sulzer Metco AG
    Inventors: Gerard Barbezat, Arno Refke, Michael Loch
  • Patent number: 7678429
    Abstract: A method of forming a coating on a powdered substrate, which method comprises introducing an atomized liquid and/or solid coating forming material and separately transporting a powdered substrate to be coated into an atmospheric plasma discharge and/or an ionized gas stream resulting therefrom, and exposing the powdered substrate to the atomized liquid and/or solid coating forming material.
    Type: Grant
    Filed: April 8, 2003
    Date of Patent: March 16, 2010
    Assignee: Dow Corning Corporation
    Inventors: Andrew James Goodwin, Stuart Leadley, Seamus Paul Ryan
  • Publication number: 20100047471
    Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
    Type: Application
    Filed: October 27, 2009
    Publication date: February 25, 2010
    Applicant: CANON ANELVA CORPORATION
    Inventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
  • Publication number: 20100048076
    Abstract: The invention is directed to a method for depositing particles on a substrate and to a fibrous web comprising deposited particles. A method is provided according to which particles are provided on a surface activated substrate by means of a plasma treatment. The method comprises the subsequent steps of -providing particles, preferably coating said particles; -subjecting said particles to a first plasma treatment before being deposited on said substrate; and -depositing said particles on said surface of said substrate, preferably using a second plasma treatment.
    Type: Application
    Filed: December 27, 2007
    Publication date: February 25, 2010
    Applicant: Nederlandse Organisatie voor toegepast - natuurwetenschappelijk onderzoek TNO
    Inventors: Yves L. M. Creyghton, Timo Huijser, Marino Emanuela
  • Publication number: 20090317557
    Abstract: Disclosed is a process for making a composite material that contains core-shell structured nanoparticles. The process includes providing a precursor in the form of a powder a liquid and/or a vapor of a liquid that contains a core material and a shell material, and suspending the precursor in an aerosol gas to produce an aerosol containing the precursor. In addition, the process includes providing a plasma that has a hot zone and passing the aerosol through the hot zone of the plasma. As the aerosol passes through the hot zone of the plasma, at least part of the core material and at least part of the shell material in the aerosol is vaporized. Vapor that contains the core material and the shell material that has been vaporized is removed from the hot zone of the plasma and allowed to condense into core-shell structured nanoparticles.
    Type: Application
    Filed: June 20, 2008
    Publication date: December 24, 2009
    Applicants: Toyota Motor Engineering & Manufacturing North America, Inc., University of New Mexico
    Inventors: Claudia Luhrs, Jonathan Phillips, Monique N. Richard
  • Publication number: 20090263668
    Abstract: A plasma cross-linked surface coating of an oligomer has resulted in a low friction surface coating that is also highly durable. The coated device comprises a metal substrate and a plasma cross-linked coating of an oligomer having a molecular weight less than 10,000, and in one embodiment a molecular weights between 1000 and 10,000.
    Type: Application
    Filed: April 16, 2009
    Publication date: October 22, 2009
    Inventors: Moses M. DAVID, Gregory D. Clark
  • Patent number: 7578889
    Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: August 25, 2009
    Assignee: Lam Research Corporation
    Inventors: Hong Shih, Yaobo Yin, Shun Jackson Wu, Armen Avoyan, John E. Daugherty, Linda Jiang
  • Publication number: 20090202739
    Abstract: A method for forming a polymeric coating on a substrate surface, by plasma treating a mixture comprising a free-radical initiated polymerisable monomer having one or more free-radical polymerisable groups in the presence of a free radical initiator, wherein said plasma treatment is a soft ionisation plasma process (a process wherein precursor molecules are not fragmented during the plasma process and as a consequence, the resulting polymeric coating has the physical properties of the precursor or bulk polymer) aid depositing the resulting polymeric coating material onto a substrate surface.
    Type: Application
    Filed: October 12, 2005
    Publication date: August 13, 2009
    Applicant: DOW CORNING IRELAND LTD.
    Inventors: Liam O'Neill, Lesley Ann O'Hare, Andrew James Goodwin