Abstract: A coating material includes silicon and/or aluminum, hydrogen and any two or more of oxygen, nitrogen, carbon, and fluorine. The coating material exhibits a hardness of about 17 GPa or greater and an optical band gap of about 3.5 eV or greater. The coating material includes, in atomic %, silicon and/or aluminum in an amount of about 40 or greater, hydrogen in an amount in the range from about 1 to about 25, nitrogen in an amount of about 30 or greater, oxygen in an amount in the range from about 0 to about 7.5, carbon in an amount in the range from about 0 to about 10, and optionally, fluorine and/or boron. Articles including the coating material may exhibit an average transmittance of about 85% or greater over an optical wavelength regime in the range from about 380 nm to about 720 nm and colorlessness.

Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide stack comprising as plurality of metal silicide layers on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide stack in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer.

Abstract: A method for making a heat treated (HT) coated article including an electrode, to be used in applications such as windows, electronic devices, or other applications. The method may include heat treating a substrate coated with at least a transparent conductive oxide (TCO) layer and an overlying film. From the TCO outwardly, the overlying film may include any combination of two, three or four of: (i) a gettering and/or doping layer(s); (ii) a stabilizing layer(s); (iii) a release layer(s); and (iv) an oxygen blocking or barrier layer. After HT, the protective film may be entirely or partially removed. Other embodiments relate to the pre-HT coated article, or the post-HT coated article.

Abstract: A method for preparing an abrasion resistant optical article comprising: providing an optical article having at least one main face bearing an abrasion resistant coating; positioning said optical article in a vacuum deposition chamber; depositing a first inorganic layer comprising SiO2 onto and in direct contact with said abrasion resistant coating by vacuum evaporation of SiO2 and/or SiOx, with 1<x<2, in said vacuum chamber, the thickness of said first inorganic layer ranging from 10 to 100 nm, wherein oxygen is introduced inside said vacuum chamber during said evaporation; said deposition being conducted without ion assistance; depositing a second inorganic layer comprising SiO2 onto and in direct contact with said first inorganic layer by vacuum evaporation of SiO2 and/or SiOx, with 1<x<2, in said vacuum chamber, the thickness of said second inorganic layer ranging from 70 to 300 nm, wherein said deposition is conducted without ion assistance and the pressure in said vacuum chamber during the d

Abstract: Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.

Abstract: The invention relates to a process for depositing an anti-fouling top coat onto the outermost coating layer of a coated optical article, comprising the following steps: a) providing an optical article having two main faces, at least one of which being coated with an outermost layer; b) treating said outermost layer with energetic species resulting in surface physical attack and/or chemical modification; and c) vacuum evaporating a liquid coating material for an anti-fouling top coat by means of an evaporation device, resulting in the deposition of the evaporated coating material onto the treated outermost layer of the optical article, wherein prior to the vacuum evaporation step of the liquid coating material, said liquid coating material has been treated with energetic species.

Abstract: The present invention provides a method of coating a substrate for a lithium secondary battery with inorganic particles, comprising charging the inorganic particles to form charged inorganic particles; transferring the charged inorganic particles on the substrate for a lithium secondary battery to form a coating layer; and fixing the coating layer with heat and pressure. Such a coating method according to one embodiment of the present invention uses electrostatic force without the addition of a solvent, and therefore, non use of a solvent can result in cost-reducing effects since there is no burden on the handling and storing of the solvent, and since a drying procedure after slurry coating is not needed, it allows for the preparation of a lithium secondary battery in a highly effective and rapid manner.

Abstract: A plasma nozzle supplies a plasmatized electric discharge gas, and a first supply section in a flow regulator which is interposed between the plasma nozzle and a base member supplies a first liquid-phase raw material. A second supply section which is separate from the first supply section supplies a second liquid-phase raw material. The first liquid-phase raw material which is activated by a plasmatized electric discharge gas and deposited on the base member while in a liquid phase is caused to interact with the second liquid-phase raw material which is activated by the plasmatized electric discharge gas, and solidified into a film on the base member.

Abstract: Enhanced corrosion resistance is achieved in a coating by using a germanium-containing precursor and hollow cathode techniques to form a first layer directly on the surface of a workpiece, prior to forming an outer layer, such as a layer of diamond-like carbon (DLC). The use of a germanium or germanium-carbide precursor reduces film stress and enables an increase in the thickness of the subsequently formed DLC. Germanium incorporation also reduces the porosity of the layer. In one embodiment, a cap layer containing germanium is added after the DLC in order to further reduce the susceptibility of the coating to chemical penetration from the top.

Abstract: The present invention relates to an electrode composed of carbon having at least two different zones, wherein an outer zone (A) forms the base of the electrode and carries one or more inner zones, wherein the innermost zone (B) projects from the zone (A) at the top and has a lower specific thermal conductivity than zone (A).

Abstract: Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

Abstract: Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.

Abstract: A system and process for the formation of thin film materials. The process includes forming a plasma from a first material stream and allowing the plasma to evolve in space and/or time to extinguish species that are detrimental to the quality of the thin film material. After the plasma evolves to an optimum state, a second material stream is injected into the deposition chamber to form a composite plasma that contains a distribution of species more conducive to formation of a high quality thin film material. The system includes a deposition chamber having a plurality of delivery points for injecting two or more streams into a plasma region. The delivery points are staggered in space to permit an upstream plasma formed from a first material stream deposition source material to evolve before combining a downstream material stream with the plasma.

Abstract: The formation of a barrier layer within individual channels or cavities of a microfluidic device is described. The barrier layer is effected through a gas phase deposition process, desirably implemented in a plasma environment using a gas plasma reactor. Judicious selection of a precursor compound used within the gas plasma reactor can provide for generation of a layer on the individual surfaces. Desirably the surface or barrier layer is generated through the chemical adsorption of a metalloid oxide such as a silicon oxide layer on the surface of the individual channels or cavities.

Abstract: Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.

Abstract: Methods for processing a vessel, for example to provide a gas barrier or lubricity, are disclosed. First and second PECVD or other vessel processing stations or devices and a vessel holder comprising a vessel port are provided. An opening of the vessel can be seated on the vessel port. The interior surface of the seated vessel can be processed via the vessel port by the first and second processing stations or devices. Vessel barrier, lubricity and hydrophobic coatings and coated vessels, for example syringes and medical sample collection tubes are disclosed. A vessel processing system and vessel inspection apparatus and methods are also disclosed.

Abstract: The method of forming an organic film includes: a pre-processing step including a plasma treatment step of carrying out plasma treatment to a surface of a base member, and an exposure processing step of exposing the surface of the base member that has undergone the plasma treatment, in an atmosphere containing at least water; an organic film formation step of thereafter forming an organic film on the surface of the base member using a silane coupling agent; and a post-processing step including a water vapor introduction step of holding the base member on which the organic film has been formed in an atmosphere containing at least water vapor, and a dehydration processing step of holding the base member in an atmosphere having a smaller presence of water vapor than the atmosphere in the water vapor introduction step.

Abstract: The method of forming an organic film, includes: a pre-processing step including a plasma treatment step of carrying out plasma treatment to a surface of a base member, and an exposure processing step of exposing the surface of the base member that has undergone the plasma treatment, in an atmosphere containing at least water; and an organic film formation step of thereafter forming an organic film on the surface of the base member using a silane coupling agent.

Abstract: We have a method of improving the deposition rate uniformity of the chemical vapor deposition (CVD) of films when a number of substrates are processed in series, sequentially in a deposition chamber. The method includes the plasma pre-heating of at least one processing volume structure within the processing volume which surrounds the substrate when the substrate is present in the deposition chamber. We also have a device-controlled method which adjusts the deposition time for a few substrates at the beginning of the processing of a number of substrates in series, sequentially in a deposition chamber, so that the deposited film thickness remains essentially constant during processing of the series of substrates. A combination of these methods into a single method provides the best overall results in terms of controlling average film thickness from substrate to substrate.

Abstract: A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.

Abstract: A deposition system and process for the formation of thin film materials. In one embodiment, the process includes forming an initial plasma from a first material stream and allowing the plasma to evolve in space and/or time to extinguish species that are detrimental to the quality of the thin film material. After the initial plasma evolves to an optimum state, a second material stream is injected into the deposition chamber to form a composite plasma that contains a distribution of species more conducive to formation of a high quality thin film material. The deposition system includes a deposition chamber having a plurality of delivery points for injecting two or more streams (source materials or carrier gases) into a plasma region. The delivery points are staggered in space to permit an upstream plasma formed from a first material stream deposition source material to evolve before combining a downstream material stream with the plasma. Injection of different material streams is also synchronized in time.

Abstract: A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.

Abstract: A method for depositing a silicon film on a substrate includes a step of flowing a first silicon-containing gaseous composition through an electric discharge generated to form a second silicon-containing composition that is different than the first silicon-containing composition. The second composition is directed into a deposition chamber to form a silicon-containing film on one or more substrates positioned within the deposition chamber. The formation of crystalline silicon is controlled by the temperature of the deposition. Optionally, an activated hydrogen-containing composition is introduced into the deposition chamber during film deposition. The activated hydrogen-containing composition is formed by exposing hydrogen gas to microwave radiation.

Abstract: A method for depositing a silicon film on a substrate includes a step of flowing a first silicon-containing gaseous composition through an electric discharge generated to form a second silicon-containing composition that is different than the first silicon-containing composition. The second composition is directed into a deposition chamber to form a silicon-containing film on one or more substrates positioned within the deposition chamber. The formation of crystalline silicon is controlled by the temperature of the deposition.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: A system is provided for the manufacture of carbon based electrical components including, an ultraviolet light source; a substrate receiving unit whereby a substrate bearing a first layer of carbon based semiconductor is received and disposed beneath the ultraviolet light source; a mask disposed between the ultraviolet light source and the carbon based semiconductor layer; a doping agent precursor source; and environmental chemical controls, configured such that light from the ultraviolet light source irradiates a doping agent precursor and the first carbon layer.

Abstract: There are provided a silicon-film-forming composition containing silicon particles and a dispersion medium and a method for forming a silicon film by forming a coating film of the silicon-film-forming composition on a substrate and subjecting the coating film to instantaneous fusion, a heat treatment or a light treatment. According to the composition and the method, a polysilicon film with a desired thickness which may be used as a silicon film for a solar battery can be formed efficiently and easily.

Abstract: A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber, transporting plasma-generated species from the remote plasma source chamber to the gas distribution showerhead so as to distribute the plasma-generated species into the main chamber through the gas distribution showerhead, and applying plasma RF power into the main chamber.

Abstract: The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater. The multiphase, ultra low k film is prepared by plasma enhanced chemical vapor deposition in which one of the following alternatives is utilized: at least one precursor gas comprising siloxane molecules containing at least three Si—O bonds; or at least one precursor gas comprising molecules containing reactive groups that are sensitive to e-beam radiation.

Abstract: A method of applying a universal coating for a medical device comprising a medical device component, the medical device component having an outer surface and an inner surface, the universal coating applied to at least the outer surface or the inner surface of the medical device component, wherein the coating is made from a material selected from the group consisting of diamond, diamond-like, borosilicate glass, carbides and nitrides. The medical device can further be a smart medical device by incorporating a sensor placed capable of measuring chemical and/or electrical conditions. A method of applying the coating inside complicated 3D structures without the need for bonding diamond to diamond or DLC to DLC layers is also provided.

Abstract: A method of oxidizing a substrate having area of about 30,000 mm2 or more. The surface is preferably comprised of silicon-containing materials, such as silicon, silicon germanium, silicon carbide, silicon nitride, and metal suicides. A mixture of oxygen-bearing gas and diluent gas normally non-reactive to oxygen, such as Ne, Ar, Kr, Xe, and/or Rn are ionized to create a plasma having an electron density of at least about 1e12 cm?3 and containing ambient electrons having an average temperature greater than about 1 eV. The substrate surface is oxidized with energetic particles, comprising primarily atomic oxygen, created in the plasma to form an oxide film of substantially uniform thickness. The oxidation of the substrate takes place at a temperature below about 700° C., e.g., between about room temperature, 20° C., and about 500° C.

Abstract: A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region facing the ion shower grid, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. A gas mixture is furnished comprising deposition precursor species into the ion generation region and the process region is evacuated at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region whereby the pressure in the ion generation region is at least several times the pressure in the process region.

Abstract: This invention provides methods of retentate chromatography for resolving analytes in a sample. The methods involve adsorbing the analytes to a substrate under a plurality of different selectivity conditions, and detecting the analytes retained on the substrate by desorption spectrometry. The methods are useful in biology and medicine, including clinical diagnostics and drug discovery.

Abstract: In a plasma processing method making use of a plasma processing gas of a reactant gas and an inert gas, it is aimed at enhancing an efficiency of use of high-frequency power and a reactant gas to increase a processing rate. The plasma processing method comprises supplying high frequency power to an electrode 2 opposed to a substrate 6 to thereby generate plasma between the electrode 2 and the substrate 6 on the basis of a plasma processing gas comprising a reactant gas and an inert gas to perform film formation, etching, surface treatment or the like on the substrate 6, pressure P(Torr) of the plasma processing gas being set to satisfy the following relationship 2×10?7(Torr/Hz)×f(Hz)?P(Torr)?500(Torr) where f(Hz) is a frequency of high frequency power.

Abstract: A silicon oxide film has a ratio of A1 to A2 which is not higher than 0.21, where A1 is a first peak integrated intensity of a first peak belonging to Si—OH and appearing in the vicinity of a wave-number of 970 cm−1, and A2 is a second peak integrated intensity of a second peak belonging to O—Si—O and appearing in the vicinity of a wave-number 820 cm−1, and each of the first and second peak integrated intensities is defined as a product of peak width at half height and a peak height of a Raman spectrum obtained by a Raman scattering spectroscopic analysis of the silicon oxide film. The silicon oxide film is deposited under a condition that a ratio of a first flow rate Fo of oxygen gas to a second flow rate Fsi of a silicon source gas is not lower than 20.

Abstract: A method for coating surfaces, for which a precursor material is caused to react with the help of plasma and the reaction product is deposited on a surface, the reaction as well as the deposition taking place at atmospheric pressure, such that a plasma jet is generated by passing a working gas through an excitation zone and the precursor material is supplied with a lance separately from the working gas to the plasma jet.

Abstract: The present invention is a method and apparatus for the synthesis of multi-component substances, comprising entities of at least two elements, molecules, grains, crystals, structural units, or phases of matter, in which the scale of the distribution of the elements, molecules, or phases of matter may range from on the order of nanometers or less, to about one millimeter, depending upon the specific materials and process conditions that are chosen. The method and apparatus of the present invention further provides processes for preparing these compositions of matter as thin films or particles.

Abstract: A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction. It is possible to form a high quality ultra-thin film having a very smooth interface, without causing any damage to the substrate, even at room temperature.

Abstract: According to an exemplary embodiment of the invention, a method of forming a plurality of layers on an article comprises steps of generating a plasma by forming an arc between a cathode and an anode; injecting a first material comprising an organic compound into the plasma to deposit a first layer on the article; injecting a second material comprising an organometallic material into the plasma to form a second layer on the first layer; and injecting a third material comprising a silicon containing organic compound into the plasma to deposit a third layer on the second layer. The invention also relates to an article of manufacture comprising a substrate; an interlayer disposed on the substrate; a second layer disposed on the interlayer, the second layer comprising an inorganic ultraviolet absorbing material; and a third layer disposed on the second layer, the third layer comprising an abrasion resistant material.

Abstract: A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power level from about 20W to about 160W. The copolymer film has a dielectric constant from about 2.2 to about 2.5. Preferred comonomers include tetravinyltetramethylcyclotetrasiloxane, tetraallyloxysilane, and trivinylmethylsilane. The copolymer films include at least 1% by weight of the comonomer.

Abstract: Vacuum treatment installation with a vacuum treatment chamber containing a plasma discharge configuration as well as a gas supply configuration. The plasma discharge configuration has at least two plasma beam discharge configurations with substantially parallel discharge axes and a deposition configuration is positioned along a surface which extends at predetermined distances from the beam axes and along a substantial section of the longitudinal extent of the discharge beam.

Abstract: A dielectric film is prepared by a process comprising a) forming a film on a substrate by depositing a reactant gas containing a precursor of the dielectric film using plasma; b) stopping the reactant gas supply and continuing the plasma treatment to form a dielectric layer from the precursor film; and repeating the steps of a) and b) until a desired thickness of the film is obtained.

Abstract: An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The high deposition speed is attributed to the cyclotron resonance while the high performance is attributed to the CVDs.

Abstract: A method for liquid phase deposition, including the steps of providing at least two raw materials from at least two supply devices of a saturation reaction system into a mixture trough and stirring until saturation occurs, filtering out unnecessary solid-state particles, and providing saturated and filtered liquid into an over-saturation reaction trough of a steady-flow over-saturation loop reaction system and stopping the saturated and filtered liquid when the over-saturation reaction trough is filled and the saturated and filtered liquid over-flows into a liquid level control trough to a pre-determined level. The method also includes the steps of providing a substrate in the over-saturation reaction trough, providing reactants from at least two supply devices into the over-saturation reaction trough, and depositing a thin film onto the substrate when the saturated liquid becomes over-saturated.

Abstract: An apparatus and method for injecting gas within a plasma reactor and tailoring the distribution of an active species generated by the remote plasma source over the substrate or wafer. The distribution may be uniform, wafer-edge concentrated, or wafer-center concentrated. A contoured plate or profiler modifies the distribution. The profiler is an axially symmetric plate, having a narrow top end and a wider bottom end, shaped to redistribute the gas flow incident upon it. The method for tailoring the distribution of the active species over the substrate includes predetermining the profiler diameter and adjusting the profiler height over the substrate.

Abstract: The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.

Abstract: Tanned leather is dry dressed by plasma deposition at atmospheric pressure of a matrix material such as ITO, a silicone, or polyurethane, upon the protein fibers of the surface of the leather and the collagen fiber skeleton below the surface protein fibers. The leather retains its toughness, elasticity, breathability and softness or hand.

Abstract: The present invention relates to a plasma-enhanced chemical vapor deposition (PECVD) method of depositing a thin layer of a material, such as silicon dioxide, on the surface of a body, such as a semiconductor substrate. The method includes forming in a deposition chamber a plasma by means of two electrical power sources of different frequencies. A reaction gas is admitted into the deposition chamber and subjected to the plasma. The reaction gas is a mixture of tetraethylorthosilicate and a halogen gas, such as a gas of fluorine, chlorine or bromine. The reaction gas is reacted by the plasma to cause the material of the gas to deposit on the body which is within the chamber. This results in a deposited layer having a smoothly tapered surface even when the surface of the body possesses valleys and mesas, and thus prevents the formation of voids.

Abstract: An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber.

Abstract: In a film deposition process wherein a plasma generation chamber is divided from a deposition chamber, radicals are extracted from the plasma generation chamber to the deposition chamber and caused to react with a process gas to form a silicon oxide film. The deposition apparatus has a host controller for dictating a pattern of control of the process gas flow to an MFC provided in a feed part for feeding the process gas into the deposition chamber. The host controller gives the MFC instructions for executing control to, in a first half side time constituting not more than half of the whole film deposition time, first make zero or limit and then gradually increase the process gas flow. The process gas flow in the first half side time can also be limited so that the thickness of film deposited in the first half side time is not greater than 10% of the overall thickness of the silicon oxide film. A silicon-hydrogen compound (SinH2n+2 (n=1, 2, 3, . . . )) is used as the process gas.