Abstract: According to an exemplary embodiment of the invention, a method of forming a plurality of layers on an article comprises steps of generating a plasma by forming an arc between a cathode and an anode; injecting a first material comprising an organic compound into the plasma to deposit a first layer on the article; injecting a second material comprising an organometallic material into the plasma to form a second layer on the first layer; and injecting a third material comprising a silicon containing organic compound into the plasma to deposit a third layer on the second layer. The invention also relates to an article of manufacture comprising a substrate; an interlayer disposed on the substrate; a second layer disposed on the interlayer, the second layer comprising an inorganic ultraviolet absorbing material; and a third layer disposed on the second layer, the third layer comprising an abrasion resistant material.

Abstract: The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.

Abstract: The selectivity of an etchant to a capping layer in a Cu or Cu alloy interconnect member is significantly enhanced by providing a dielectric layer thereon with a faster etch rate. Embodiments include forming the dielectric layer with a faster etch rate by PECVD: (a) at a low frequency bias of about 0.1 kW or greater; (b) at a temperature of about 250° C. or greater; or (c) at a pressure greater than about 2.6 Torr.

Abstract: The present invention related to methods of manufacturing oxide, nitride, carbide, and boride powders and other ceramic, organic, metallic, carbon and alloy powders and films and their mixtures having well-controlled size and crystallinity characteristics. This invention relates, more particularly, to a development in the synthesis of the ceramic, metallic, composite, carbon and alloy nanometer-sized particles with precisely controlled specific surface area, or primary particle size, crystallinity and composition. The product made using the process of the present invention and the use of that product are also claimed herein.

Abstract: A method of forming a self-planarized HDPCVD oxide layer over a substrate having uneven topography in a process chamber is disclosed. The method comprising the steps of: depositing HDPCVD oxide over said uneven topography; and performing a sputter-only step in said process chamber.

Abstract: To suppress the formation of dust particles, prevent the implantation of ions into a substrate and to achieve a good plasma distribution in the vicinity of the substrate when depositing a silicon oxide film using TEOS, for example, by means of CVD on a substrate which has a large surface area, an apparatus in which plasma is generated in the reactor 12 and active species (radicals) are formed and film deposition is carried out on the substrate 11 with this active species and precursor gas in which a partitioning plate 15 in which a plurality of holes 22 has been formed is established.

Abstract: Deposition of coatings using an atmospheric pressure plasma jet. The use of a nonthermal source which is capable of operation at 760 torr is demonstrated. As an example of the application of the present invention, a helium/oxygen gas mixture is introduced into the annular region between two coaxial electrodes driven by a 13.56 MHz radio frequency (rf) source at between 40 and 500 W to produce a stable plasma jet. Silicon dioxide films are deposited by introducing tetraethoxysilane (TEOS) into the effluent stream. A deposition rate of 3020±250 Å/min. is achieved with an rf power of 400 W, 0.2 torr of TEOS, 11.1 torr of oxygen, 748.7 torr of helium, and a total gas flow rate of 41 L/min. The deposition rate depends on the oxygen partial pressure, the TEOS partial pressure, and the rf power to the 0.28, 0.47, and 1.41 powers, respectively. However, increasing the temperature decreases the deposition rate. The observed dielectric constants of the films decrease from 5.0±0.2 to 3.81±0.

Abstract: An apparatus for forming a film on a substrate includes a gas inlet and an insert attached to the gas inlet, the insert including a deposition source material such as lithium. To form the film on the substrate, the substrate is mounted in a vacuum chamber. After the vacuum chamber is pumped down to a subatmospheric pressure, a first process gas such as argon is provided through the gas inlet and insert and into a plasma region proximate the substrate. Power is then coupled to generate a plasma inside of the insert which heats the insert and causes the deposition source material to vaporize. The deposition source material vapor is mixed with a plasma polymerizable material in the plasma region proximate the substrate causing a plasma enhanced chemical vapor deposition (PECVD) thin film such as silicon oxide including the deposition source material (e.g. lithium) to be deposited on the substrate.

Abstract: An apparatus for forming a film on a substrate includes a gas inlet and an insert attached to the gas inlet, the insert including a deposition source material such as lithium. To form the film on the substrate, the substrate is mounted in a vacuum chamber. After the vacuum chamber is pumped down to a subatmospheric pressure, a first process gas such as argon is provided through the gas inlet and insert and into a plasma region proximate the substrate. Power is then coupled to generate a plasma inside of the insert which heats the insert and causes the deposition source material to vaporize. The deposition source material vapor is mixed with a plasma polymerizable material in the plasma region proximate the substrate causing a plasma enhanced chemical vapor deposition (PECVD) thin film such as silicon oxide including the deposition source material (e.g. lithium) to be deposited on the substrate.

Abstract: The invention describes composite coatings, in particular comprising carbon and another metallic element such as silicon or aluminium. These coatings have improved properties compared with pure tetrahedral amorphous carbon coatings, in that they have reduced stress levels and can be deposited at higher thicknesses, whilst retaining acceptable hardness and other useful mechanical properties. Also described are methods of making composite coatings, materials for making the coatings and substrates coated therewith. Specifically, a method of applying a coating to a substrate using a cathode arc source, comprises generating an arc between a cathode target and an anode of the source and depositing positive target ions on the substrate to form the coating, wherein the coating is a composite of at least first and second elements and the target comprises said at least first and second elements.

Abstract: A non-chrome process for the pretreatment of substrate surfaces to simultaneously clean them and improve their bonding strength for organic coatings such as adhesives, protective primers, sealants, paints, composites and similar materials conventionally bonded to such substrates, including non-chromated or chromated curable organic resin protective coatings applied directly to bare aluminum substrates. The invention involves the use of novel wipe solvent compositions containing a major volume of an environmentally-safe volatile organic solvent which has a low composite vapor pressure or is otherwise exempt from federal, state or local regulations, and a minor volume of a polyfunctional coupling agent, preferably of the silane type.

Abstract: A method and apparatus for neutralizing a wafer in a plasma reactor following a deposition process which charges the wafer and hinders removal of the wafer from the plasma reactor. The wafer is exposed to a plasma of a noble gas such as helium to energize the reaction zone. Then a sufficient amount of an inert electronegative gas such as oxygen to neutralize the wafer is introduced into the plasma reactor in the absence of RF power or other gases. The neutralized wafer is readily removed from the plasma chamber.

Abstract: An abrasion-resistant dielectric composite product is described comprising a substrate and an abrasion wear resistant coating material comprising carbon, hydrogen, silicon, and oxygen and a dielectric material. An improved method is provided for the deposition of highly durable and abrasion-resistant multilayer dielectric antireflective coatings and reflective colored mirror coatings onto plastic lenses such as ophthalmic lenses, safety lenses, sunglass lenses, and sports optics. An adhesion-enhancing polymer layer may be deposited onto the plastic substrate prior to deposition of the abrasion-resistant first coating layer. The multilayer dielectric coating structure consists of a transparent, highly abrasion-resistant first coating, and a second dielectric coating composed of at least one layer of dielectric material.

Abstract: The present invention relates to a sensor for detecting hydrocarbon type gas such as methane gas and propane gas, and process for manufacturing thereof. SiO.sub.2 was deposited in 1 .mu.m by ion beam sputtering with a mixed gas (3:2) of argon and oxygen on a silicon wafer in the process. In case of a propane sensor, platinum electrode is deposited in 600 .ANG. by ion beam sputtering on a tin oxide thin film synthesized by ionized beam of which the oxygen ion energy is 0 to 500 eV by using poly alumina. In case of a methane sensor, heat treatment at 500.degree. C. was performed for 1 hour in the air in order for the thin film to be stable at high operation temperature, while heat treatment was not performed in case of propane sensor. The sensor was manufactured by adding platinum or palladium thereto by argon ion beam sputtering. The thin film type tin oxide sensor according to the present invention exhibited an excellent selectivity of 47.4% even at low temperature of 150.degree. C.

Abstract: A process of preparing a moisture-resistant fluorine containing silicon oxide film includes steps of supplying reactant gases containing silicon, oxygen and fluorine into a process chamber and generating plasma in the process chamber, supporting a substrate on a substrate support in the process chamber and growing a fluorine-containing silicon oxide film on the substrate by contacting the substrate with the plasma while maintaining temperature of the film above 300.degree. C. The silicon and fluorine reactants can be supplied by separate gases such as SiH.sub.4 and SiF.sub.4 or as a single SiF.sub.4 gas and the oxygen reactant can be supplied by a pure oxygen gas. The SiH.sub.4 and SiF.sub.4 can be supplied in a gas flow ratio of SiH.sub.4 /(SiH.sub.4 +SiF.sub.4) of no greater than 0.5. The process can provide a film with a fluorine content of 2-12 atomic percent and argon can be included in the plasma to assist in gap filling. The plasma can be a high density plasma produced in an ECR, TCP.TM.

Abstract: A process for producing an optical recording medium is disclosed which has a substrate and a recording film and an inorganic dielectric film, which are superposed on said substrate. The inorganic dielectric film is formed using a plasma processing device including a microwave guide means provided with an endless ring waveguide.

Abstract: A borophosphosilicate glass is deposited on a substrate (50) by heating the substrate (50), and contacting the substrate with a mixture of the gases tetramethylcyclotetrasiloxane, trimethylborate, trimethylphosphite, and oxygen, without the presence of a carrier gas. The first three of the gases are produced from liquid sources by controlled vaporization and flow. The gases react at the heated substrate (50) to deposit the glass upon the substrate. In a reactor (52) for depositing the glass, the tetramethylcyclotetrasiloxane and trimethylborate are introduced at a gas inlet location (79), and the trimethylphosphite and oxygen are heated and introduced at another gas inlet location (90). The tetramethylcyclotetrasiloxane and trimethylborate mixture flows toward the location where the trimethylphosphite and oxygen are introduced, and whereat the gases are mixed. This gaseous mixture flows past the heated substrate (50) to deposit the glass thereon.

Abstract: An ion beam deposition method is provided for manufacturing a coated substrate with improved wear-resistance, and improved lifetime. The substrate is first chemically cleaned to remove contaminants. Secondly, the substrate is inserted into a vacuum chamber onto a substrate holder, and the air therein is evacuated via pump. Then the substrate surface is bombarded with energetic ions from an ion beam source supplied from inert or reactive gas inlets to assist in removing residual hydrocarbons and surface oxides, and activating the surface. After sputter-etching the surface, a protective, wear-resistant coating is deposited by plasma ion beam deposition where a portion of the precursor gases are introduced into the ion beam downstream of the ion source, and hydrogen is introduced directly into the ion source plasma chamber. The plasma ion beam-deposited coating may contain one or more layers.

Abstract: A plastic structure comprising:a plastic media, such as a plastic card; anda thin film amorphous inorganic or DLC coating on the plastic media, the coating being hard, transparent or semi-transparent, and wear resistant.

Abstract: A method and apparatus for the controlled synthesis and assembly of nanoparticles into nanostructured materials, including nanocomposites, includes a source of nanoparticles and a hypersonic impaction apparatus. The nanoparticles are impacted on a substrate through hypersonic impaction to thereby provide nanostructured materials as well as nanophase materials.

Abstract: A method for forming a functional silicon- or germanium-containing amorphous deposited film on a substrate which comprises a film-forming chamber having a film-forming space, a substrate holder and an electric heater for positioning the substrate in the film-forming chamber, an exhaust pipe in fluid communication with the film-forming chamber, a first gas-introducing portion for providing an active species (H), having an activation space for generating the active species (H), a microwave discharge supply source and a passage for providing a gaseous hydrogen-containing material into the activation space in order to produce the active species (H), a second gas-introducing portion for providing a gaseous silicon- or germanium-containing material (X), capable of reacting with the active species (H) to form a reaction product (HX) that is capable of forming the functional deposited film on the substrate, and a transportation path having a mixing space and a second microwave discharge energy supply source for promo

Abstract: An Si--O--F insulating film having a low dielectric constant is deposited on a substrate by thermally reacting disassociated SiF.sub.4 radicals and ozone or oxygen gas in a vacuum chamber. The SiF.sub.4 radicals are formed remotely from the chamber and interact thermally with the ozone or oxygen without requiring plasma enhancement. The deposited Si--O--F film has good gap-filling properties and is suitable for forming IMD layers over high aspect ratio 0.25 micron geometries.

Abstract: Apparatus and methods for treatment of materials by producing gaseous product material in the form of high purity molecules including metal oxides, metal carbides, etc., using catalytic and non-catalytic processes, and stoichiometrically depositing the gaseous product material on articles, substrates or base materials in the fields of semi-conductors, superconductors, thin optical films, wear and corrosion and the like. The deposition of high purity gas phase material produced by the disclosed methods are useful in forming common refractory layers, films, and bodies such as ferroelectric, superconducting and semiconductor materials, to name a few. Catalytic reaction for the formation and desorption of the molecules, etc., may be monitored by the use of work function measurements. Such measurements also provide a basis for detecting the presence of impurities, gasification of the surface catalyst, and conditions which favor maximum gas phase molecular formation.

Abstract: A method for creating a dielectric coating on a substrate produces near bulk density metal oxide coatings with extremely low surface roughness, microstructure and low defect density. The coatings have a low scatter of less than 50 ppm, low loss of less than 100 ppm, and an environmental stability of 0.1 or less spectral shift. A high vacuum chamber is provided which includes a substrate carrier device, an electron beam gun, a substrate, an evaporant source of coating material, a plasma bridge neutralizer and an ion gun. Coating material is evaporated with the electron beam gun to form a coating material evaporant that is directed to the substrate. An ion gun is directed toward the substrate and produces ions that arrive substantially simultaneously with the coating material evaporant at the substrate. The ions provide a momentum assist to the coating material. The result is a formation of a desirable dielectric thin film of coating material on the substrate.

Abstract: A method and apparatus for reactive plasma surfacing includes at least two electrodes between which reactive gases are passed. The reactive gases are ionized by the arc between the electrodes, creating a plasma of heated, ionized, reactive gases. The plasma is then applied to a surface to be treated, causing a chemical reaction between the plasma and the surface and resulting in a new diffusional substrate surface on the treated object. The process occurs at substantially atmospheric pressure, and may include an inert gas to shield the process from the surrounding environment.

Abstract: A method of forming a gaseous treatment atmosphere capable of depositing a silicon-containing film on a nonmetallic substrate comprising the steps of:converting an initial treatment gas mixture into a primary treatment gas mixture in an apparatus for forming excited or unstable gas species, the primary treatment gas mixture comprising excited or unstable gaseous species substantially devoid of electrically charged species,combining the primary treatment gas mixture with an adjacent treatment gas mixture which comprises at least one gaseous silicon precursor which has not passed through the apparatus, to form the gaseous treatment atmosphere.

Abstract: A method of forming a gaseous treatment atmosphere capable of depositing a silicon on a metal substrate comprising the steps of:converting an initial gas mixture into a primary gas mixture in an apparatus for forming excited or unstable gas species, the primary gas mixture comprising excited or unstable gaseous species substantially devoid of electrically charged species,combining the primary gas mixture with an adjacent gas mixture which comprises at least one silicon precursor gas and which has not passed through the apparatus, to form the gaseous treatment atmosphere.

Abstract: In a process for coating a substrate surface with a layer of inorganic material, the inorganic material is vaporised in a vacuum chamber evacuated to at least 10.sup.-3 mbar by bombarding with an electron beam from a high voltage electron-beam gun and deposited on the substrate surface. Gas discharging is created between the point of incidence (A) of the electron beam on the inorganic material to be vaporised and an anode such that the electrostatic charge created by the high voltage electron-beam gun flows off via the anode. This way damage to the substrate, which may arise as a result discharging phenomena, can be effectively avoided.

Abstract: In accordance with the invention, a method of depositing substituted fluorocarbon polymeric layers exhibiting a high degree of cross-linking is presented. The substituted fluorocarbon polymeric layers are formed of substituted fluorocarbon polymers in which the carbon functionality in standard fluorocarbon polymers is selectively replaced with a substitute functionality, typically silicon, oxygen or nitrogen. Formation of a substituted fluorocarbon polymeric layer includes placing a substrate into a reactor and, while maintaining the reactor pressure below 100 torr, introducing a process gas into the reactor. Optionally, the substrate is biased. The process gas is then ionized thereby depositing the substituted fluorocarbon polymeric layer on the substrate.

Abstract: A composition of matter having an atomic density between that of pure diamond and at least 0.18 g-atoms per cubic centimeter and the formula:C.sub.1-z-w Si.sub.z A.sub.w ?H.sub.1-x F.sub.x !.sub.ywhere: 0.ltoreq.z+w.ltoreq.0.15, 0.ltoreq.w.ltoreq.0.05, 0.ltoreq.x.ltoreq.0.10, 0<y<1.5, and, A is boron or oxygen. Variation of the constituents and the parameters of production of the compositions in self-biasing RF cavities, or primary or secondary ion beam methods, allows formation of films of, for example, desired hardness, lubricity, density, electrical conductivity, permeability, adhesion and stress. Variation of the properties allows production of films formed by the composition as a function of depth.

Abstract: Methods are provided for depositing insulator material at a pre-defined area of an integrated circuit (IC) by: placing an IC in a vacuum chamber; applying to a localized surface region of the integrated circuit at which insulator material is to be deposited a first gas containing molecules of a dissociable compound comprising atoms of silicon and oxygen and a second gas containing molecules of a compound which reacts with metal ions; generating a focused ion beam having metal ions of sufficient energy to dissociate molecules of the first gas; and directing the focused ion beam at the localized surface region to dissociate at least some of the molecules of the first gas and to thereby deposit on at least a portion of the localized surface region a material containing atoms of silicon and oxygen. The dissociable compound comprises atoms of carbon and hydrogen, such as di-t-butoxydiacetoxy-silane. The compound which reacts with metal ions may be carbon tetrabromide or ammonium carbonate.

Abstract: An abrasion wear resistant coated substrate product is described comprising a substrate and an abrasion wear resistant coating material comprising carbon, hydrogen, silicon, and oxygen. The abrasion wear resistant coating material has the properties of Nanoindentation hardness in the range of about 2 to about 5 GPa and a strain to microcracking greater than about 1% and a transparency greater than 85% in the visible spectrum. The coated products of the present invention are suitable for use in optical applications such as ophthalmic lenses or laser bar code scanner windows. In the method for making the products, the substrate is first chemically cleaned to remove contaminants. In the second step, the substrate is inserted into a vacuum chamber, and the air in said chamber is evacuated. In the third step, the substrate surface is bombarded with energetic ions and/or reactive species to assist in the removal of residual hydrocarbons and surface oxides, and to activate the surface.

Abstract: A method of depositing, by microwave plasma enhanced chemical vapor deposition, a modified, silicon oxide, barrier coating atop a temperature sensitive substrate; said barrier coating having barrier properties to at least gaseous oxygen and water vapor. The precursor gaseous mixture includes at least a silicon-hydrogen containing gas, an oxygen containing gas and a gas containing at least one element selected from the group consisting of germanium, tin, phosphorus, and boron. The method requires introducing a sufficient flow rate of oxygen-containing gas into the precursor gaseous mixture to eliminate the inclusion of silicon-hydrogen bonds into the deposited coating. The preferred modifier is germanium. Also, a composite material having a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide (modified or non-modified) barrier coating. The barrier coating has barrier properties to at least gaseous oxygen and water vapor and is substantially free of Si--H bonds.

Abstract: A self-supporting sheet-like structure is described, which contains a substrate layer and a structured coating on at least one surface of the substrate layer. The structured coating is produced by treating at least one surface of the substrate layer by means of an electric corona discharge, which takes place between a high voltage electrode and a grounded counter-electrode. In this procedure, an aerosol containing discrete inert particles is simultaneously introduced into the corona discharge space during the corona discharge to improve the slip characteristics and reduce friction of the substrate layer.

Abstract: For forming a photoluminescence layer on a semiconductor layer, ions are irradiated to a surface portion of a semiconductor layer where a photoluminescence layer is to be formed, and then, the semiconductor layer is immersed in a solution containing hydrofluoric acid, whereby the ion-irradiated and hydrofluoric-acid-treated portion forms a photoluminescence layer.

Abstract: An abrasion wear resistant coated substrate product is described comprising a substrate and an abrasion wear resistant coating material comprising carbon, hydrogen, silicon, and oxygen. The abrasion wear resistant coating material has the properties of Nanoindentation hardness in the range of about 2 to about 5 GPa and a strain to microcracking greater than about 1% and a transparency greater than 85% in the visible spectrum. The coated products of the present invention are suitable for use in optical applications such as ophthalmic lenses or laser bar code scanner windows. In the method for making the products, the substrate is first chemically cleaned to remove contaminants. In the second step, the substrate is inserted into a vacuum chamber, and the air in said chamber is evacuated. In the third step, the substrate surface is bombarded with energetic ions and/or reactive species to assist in the removal of residual hydrocarbons and surface oxides, and to activate the surface.

Abstract: A method for sequentially depositing a silicon oxide based film as a barrier on a substrate. The film is useful for providing an effective barrier against gas permeability in containers and for extending shelf-life of containers, especially plastic evacuated blood collection devices.

Abstract: The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deterioration is reduced, the field durability enhanced, and the temperature characteristic improved, a p-layer composed of amorphous silicon type semiconductor containing hydrogen, an i-layer composed of amorphous silicon-germanium type semiconductor containing hydrogen and further including microcrystalline germanium, and an n-layer composed of amorphous silicon type semiconductor containing hydrogen are laminated on a substrate, the i-layer being formed at a substrate temperature from 400.degree. to 600.degree. C. by microwave plasma CVD, the particle diameter of said microcrystalline germanium ranging from 50 to 500 angstroms. Also, the content of microcrystalline germanium varies in the layer thickness direction.

Abstract: The invention relates to a process of providing a scratch-resistant coating for a lens made of an optical material comprising synthetics. In order for the synthetic material, for example a CR 39, to be protected against scratches, a very thin adhesion layer of SiO is applied first, and is subsequently provided with a thick SiO.sub.2 layer. Both layers are deposited in a vacuum chamber which comprises both a thermal vaporizer for vaporizing the coating materials and a plasma source for irradiating the substrate simultaneously with application of the vaporized coating material.

Abstract: A process for forming a deposited film comprises the steps of:(a) arranging previously a substrate for formation of a deposited film in a film forming space;(b) forming a deposited film on said substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween; and(c) exposing the deposited film growth surface to a gaseous substance (E) having etching action on the deposited film to be formed during the film forming step (b) to apply etching action on the deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.

Abstract: This invention relates to methods of forming interference anti-reflective, abrasion resistant and easy to clean coatings on plastic articles by improved microwave plasma modification to obtain a coating with stable layer thickness and a refractive index as low as 1.29-1.35, which is formed from organic silicon compounds.

Abstract: A method of forming conformal, high quality silicon oxide films that can be deposited over closely spaced, submicron lines and spaces without the formation of voids, comprises forming a plasma of TEOS and a selected halogen-containing gas in certain ratios. By proper control of the energy sources that create the plasma, the proper selection of the halogen-containing gas and selection of other processing parameters, high deposition rates can also be achieved.

Abstract: A process for forming a functional deposited film by way of RF plasma CVD process, comprising generating plasma in a substantially enclosed plasma generation chamber provided with an electrode arranged at the periphery of said plasma generation chamber by applying a RF power through said electrode into said plasma generation chamber, and forming said functional deposited film on a substrate placed in a deposition chamber communicated with said plasma generation chamber, wherein said substrate is arranged so as to isolate from a zone where said plasma is generated, characterized by comprising causing a magnetic field in said plasma generation chamber by means of a magnetic field generation means such that a magnetic flux density with a maximum intensity in the range of from 500 to 1000 Gauss is provided on the inner wall face side of and in parallel to the inner wall face of said plasma generation chamber; supplying a plasma generating raw material gas to a zone where said magnetic field resides; applying a RF

Abstract: Structures having a controlled three-dimensional geometry are deposited by lectrostatically focused deposition using charged particle beam and gaseous precursors, or polarizable precursors with or without a charged particle beam. At least one apertured electrode is electrically biased with respect to the substrate surface. The resulting electrostatic field and field gradient focuses the charged particle beam or polarizable gaseous precursor molecules, and controls the three-dimensional geometry of the deposited structure. By this method, an array including many deposited structures may be simultaneously deposited on a single substrate. Thus, the disclosed method provides a fact and simple way of fabricating one or more arrays of three-dimensional structures. The method is particularly useful in the fabrication of arrays of sharp-tipped, cone-shaped conductive structures, such as field emitter tips and contacts.

Abstract: The invention concerns a process for depositing a thin layer of silicon oxide bonded to a substrate of a polymeric material comprising, concomitantly or consecutively (1) subjecting a surface of the substrate to an electrical discharge with dielectric barrier and (2) exposing said surface of the substrate to an atmosphere containing a silane, thus forming a deposit of silicon oxide bonded to said surface of the substrate Application to the production of sheets or films useful for example as food wrapping.

Abstract: An ion beam deposition method is provided for manufacturing a coated substrate with improved abrasion resistance, and improved lifetime. According to the method, the substrate is first chemically cleaned to remove contaminants. In the second step, the substrate is inserted into a vacuum chamber, and the air in said chamber is evacuated. In the third step, the substrate surface is bombarded with energetic ions to assist in the removal of residual hydrocarbons and surface oxides, and to activate the surface. Alter the substrate surface has been sputter-etched, a protective, abrasion-resistant coating is deposited by ion beam deposition. The ion beam-deposited coating may contain one or more layers. Once the chosen thickness of the coating has been achieved, the deposition process on the substrates is terminated, the vacuum chamber pressure is increased to atmospheric pressure, and the coated substrate products having improved abrasion-resistance are removed from the vacuum chamber.

Abstract: An optical waveguide is disclosed with a substantially planar substrate and a waveguide layer applied to the substrate. The invention resides in that the substrate consists of a synthetic resin or of a material having a high organic proportion. This has the advantage that the high index of refraction of the inorganic waveguide layer is combined with the material properties of the synthetic resin substrate, such as, for example, breaking resistance, plastic and thermoplastic moldability, photochemical structuring ability, and others.

Abstract: A silicon oxide film is deposited on a substrate by chemical vapor deposition (CVD) using an organosilicon compound such as tetraethylorthosilicate (TEOS) and ozone as the principal reactants. The organosilicon compound gas and an ozone-oxygen gas which is relatively low in ozone concentration such as 0.1-1% are mixed in a gas mixer outside the CVD reaction chamber, and the resultant gas mixture is fed into the reaction chamber. Separately, another ozone-oxygen gas which is relatively high in ozone concentration such as 1-10% is introduced directly into the reaction chamber so as to come into contact with and mix with the aforementioned gas mixture in the vicinity of the substrate surface. The obtained silicon oxide film is good in film properties and step coverage, and the CVD operation does not suffer from deposition of reaction products in the gas feeding pipes and gas injecting nozzles.

Abstract: A plasma reactor and method for forming a dense plasma from a gas is described incorporating a housing, a gas inlet to the housing, a pump for evacuating the housing, a magnetic coil to generate a magnetic field in the housing, a radio frequency power supply, an electrode or induction coil in the housing, a microwave power supply. The invention overcomes the problem of an upper plasma density limit independent of increases in microwave power.

Abstract: An ion beam deposition method is provided for manufacturing a coated substrate with improved abrasion resistance, and improved lifetime. According to the method, the substrate is first chemically cleaned to remove contaminants. In the second step, the substrate is inserted into a vacuum chamber, and the air in said chamber is evacuated. In the third step, the substrate surface is bombarded with energetic ions to assist in the removal of residual hydrocarbons and surface oxides, and to activate the surface. Alter After the substrate surface has been sputter-etched, a protective, abrasion-resistant coating is deposited by ion beam deposition. The ion beam-deposited coating may contain one or more layers. Once the chosen thickness of the coating has been achieved, the deposition process on the substrates is terminated, the vacuum chamber pressure is increased to atmospheric pressure, and the coated substrate products having improved abrasion-resistance are removed from the vacuum chamber.