Abstract: Systems and methods of the disclosure perform in situ sensing and real time compensation of various non-uniformities in substrate processing systems. A plasma non-uniformity is sensed by determining a temperature distribution across a matrix of a plurality of micro-heaters disposed in the substrate support. Alternatively, the plasma non-uniformity is sensed by determining heat flux through the substrate support using the matrix heaters and one or more heaters used to heat one or more zones of the substrate support. The plasma non-uniformity is compensated by adjusting one or more parameters such as power supplied to the matrix heaters, RF power supplied to generate plasma, chemistry and/or flow rate of gas or gases used to generate plasma, settings of thermal control units or chillers, and so on. Additionally, non-uniformities inherent in the substrate support are sensed using the zone and matrix heaters and are compensated by adjusting the one or more parameters.

Abstract: An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

Abstract: This invention relates to a coating comprising at least one AlTiN-based film deposited by means of a PVD process, wherein the at least one AlTiN-based film deposited is comprising an Al-content—in relation to the Ti-content—in atomic percentage higher than 75%, and wherein the AlTiN-based film exhibits solely a crystallographic cubic phase and internal compressive stresses and this invention relates to a method involving deposition of an AlTiN-based film.

Abstract: A Si-free C-containing film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Abstract: A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition in an edge region of a substrate. The apparatus includes a reflector assembly that surrounds a substrate support and is configured to reflect heat to the substrate during reflowing of material deposited on the substrate and a plurality of permanent magnets embedded in the reflector assembly that are configured to influence ion trajectories on the edge region of the substrate during deposition processes, the plurality of permanent magnets are spaced symmetrically around the reflector assembly.

Abstract: An apparatus includes a fine bubble generator, a gas supplying source, a first plasma generator, a second plasma generator, a power source and a control module. The fine bubble generator is configured to generate fine bubbles in a liquid. The gas supplying source is configured to supply a working gas. The first plasma generator is configured to generate a first plasma gas from the working gas. The second plasma generator is configured to generate a second plasma gas from the working gas. The power source is configured to supply electricity to the first plasma generator and the second plasma generator. The control module is configured to adjust the power source to provide power to the first plasma generator and the second plasma generator. The first plasma gas and the second plasma gas are directed into the liquid.

Abstract: It is an object of the present invention to provide a packaging bag having excellent dimensional stability, processability, bag breakage resistance, and chemical resistance, and causing less transfer of an extract to contents. A packaging bag includes a laminated body in which a layer of biaxially stretched polybutylene terephthalate film, having a thickness of 8 to 25 ?m and a polyolefin film sealant layer having a thickness of 10 to 100 ?m are laminated. The biaxially stretched polybutylene terephthalate film satisfies (a) to (c) below: (a) the biaxially stretched polybutylene terephthalate film contains 60% by mass or more of a polybutylene terephthalate resin; (b) a thermal shrinkage of the biaxially stretched polybutylene terephthalate film at 150° C. for 30 minutes is ?2 to +4%; and (c) a total amount of 1,4-butanediol and THF volatilized during heating at a temperature of 135° C. for 60 minutes is 2000 ppb or less.

Abstract: A duoplasmatron ion source with a partially ferromagnetic anode can be used in multiple applications, including the production of negative ions for secondary ion mass spectrometers and particle accelerators. A partially ferromagnetic anode, which may be embodied in a partially ferromagnetic anode insert, includes a ferromagnetic and non-ferromagnetic portions joined together at a juncture, with an ion extraction aperture defined in the ferromagnetic portion and the juncture being laterally offset from the aperture. An asymmetric magnetic field produced by the partially ferromagnetic region facilitates extraction of charged ions from the central, most intense region of a source plasma in the duoplasmatron ion source. A ferromagnetic conical portion of the anode defines the ion extraction aperture in order to maximize the magnetic field in the vicinity of this aperture.

Abstract: A plasma etching apparatus includes a first RF power supply unit configured to apply a first RF power for plasma generation to a first electrode or a second electrode disposed opposite to each other in a process container configured to be vacuum-exhausted, a second RF power supply unit configured to apply a second RF power for ion attraction to the second electrode, and a controller configured to control the second RF power supply unit. The second RF power supply unit includes a second RF power supply and a second matching unit. The controller is preset to control the second RF power supply unit to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power and a second power, while controlling the second matching unit to switch a matching operation in synchronism with the power modulation.

Abstract: A low reflectivity coating (40, 80/82) is provided on a substrate (22). The coating includes a layer of substantially vertically aligned carbon nanotubes (40) on an exposed surface (21) of the substrate. Provided on and extending partially within the carbon nanotube layer (40) is a hydrophobic coating (80, 82), in the preferred embodiment of or containing fluorocarbon. The hydrophobic coating (80, 82) prevents any settling or ingress of water particles onto or into the carbon nanotube layer (40) and as a result increases the stability of the carbon nanotube layer during use (40) while improving the low reflectivity of the film.

Abstract: According to the invention, there is provided a plasma processing apparatus which can generate plasma stably and efficiently, and can efficiently treat all of the desired regions to be treated of a base material within a short period of time. Provided is a plasma processing apparatus including an opening portion having an opening width of 1 mm or more; a dielectric member that defines a circular chamber constituting a circular space which communicates the opening; a gas supply pipe that introduces gas into an inside of the circular chamber; a coil that is provided in a vicinity of the circular chamber; a high-frequency power supply that is connected to the coil; and a base material mounting table on which a base material is disposed near the opening.

Abstract: The present invention relates to a transparent conductive film which is excellent in dotting property under a heavy load and excellent in bending resistance. Provided is a transparent conductive film, comprising a flexible transparent base; and a transparent conductive layer formed on the flexible transparent base and including a crystalline indium/tin composite oxide, wherein a compressive residual stress of the transparent conductive layer is 0.4 to 2 GPa.

Abstract: An apparatus and method for plasma finishing of fibrous materials including paper and knitted, woven and non-woven fibrous substrates such that desired characteristics are imparted are described. The method includes depositing a monomer comprising at least one fluorocarbon monomer with chemical additives, as required, at atmospheric pressure onto the paper or knitted, woven or non-woven substrate; exposing the monomer on a single surface of the fibrous material to an inert gas, atmospheric-pressure plasma, thereby causing polymerization of the monomer species; and repeating this sequence using multiple sequential deposition and plasma discharge steps to create a layered surface having durability against abrasion for both water-based laundry methods and dry-cleaning methods, and normal wear, without affecting the feel, drape, appearance or breathability of the substrate material.

Abstract: A method for manufacturing an optical fiber preform, including: a) providing a lining tube as a substrate tube, and doping and depositing by a PCVD or an MCVD process; b) in the reacting gas of silicon tetrachloride and oxygen, introducing a fluorine-containing gas for fluorine doping, introducing germanium tetrachloride for germanium doping, ionizing the reacting gas in the lining tube through microwaves to form plasma, depositing the plasma on the inner wall of the lining tube in the form of glass; c) after the completion of deposition, processing the deposited lining tube into a solid core rod by melting contraction through an electric heating furnace; d) sleeving the solid core rod into a pure quartz glass jacketing tube and manufacturing the two into an optical fiber preform; and e) allowing the effective diameter d of the optical fiber preform to become between 95 and 205 mm.

Abstract: The present invention is a method and apparatus for applying coatings in a rarefied gaseous medium. A cold cathode electron gun is used to generate an electron beam, which is directed to a crucible containing initial solid materials in a vacuum chamber, thus generating an initial solid material vapor. Nitrogen reaction gas is bled into the vacuum chamber, and ionization of the nitrogen gas in high frequency discharge. Subsequent interaction of initial material vapor with nitrogen ions and atoms results in generation of solid product heating of the substrate. Condensation of the vapor on the surface of substrate generates a thin film of solid electrode or electrolyte. The resulting rate of deposition of thin film of vitreous solid electrolyte and LiPon solid electrolyte is substantially higher than can be achieved with a magnetron sputtering process.

Abstract: A method of forming a metalloid-containing material comprises the step of preparing a hydrometalloid compound in a low volume on-demand reactor. The method further comprises the step of feeding the hydrometalloid compound prepared in the microreactor to a deposition apparatus. Additionally, the method comprises the step of forming the metalloid-containing material from the hydrometalloid compound via the deposition apparatus. A deposition system for forming the metalloid-containing material comprises at least one low volume on-demand reactor coupled to and in fluid communication with a deposition apparatus.

Abstract: A method of depositing a coating by vapor deposition. The method including ionizing a process gas, generating a metal vapor and creating a metal flow having a metal atom flow density in the range of 1E14 m?3 to 1E24 m?3. The method also includes providing a thermionic emission from a thermionic ionizing grid including thermionic filaments, wherein said ionizing filament grid is at least partially located within said region having a metal atom flow density in the range of 1E14 m?3 to 1E24 m?3, and coating a substrate with the metal vapor.

Abstract: In plasma activated chemical vapour deposition a plasma decomposition unit is used that is arranged in or connected to a vacuum vessel having a relatively low pressure or vacuum, to which an operating gas is provided. Periodically repeated voltage pulses are applied between the anode and the cathode of the plasma decomposition unit in such a manner that pulsed electric discharges are produced between the cathode and the surrounding anode of the plasma decomposition unit. The anode is arranged in a special way so that at least a portion thereof will obtain only an electrically conductive coating or substantially no coating when operating the unit. For that purpose, the anode includes a portion located in the direct vicinity of the free surface of the cathode. The portion is a flange or edge portion which is located or extends over margins of the free surface of the cathode.

Abstract: The present invention relates to an (AI,Ti)N coating exhibiting at least two different coating portions, A and B, having grain size in nanometer magnitude order characterized in that the coating portion A exhibit larger grain size and higher elastic modulus than the coating portion B. The present invention relates as well to a method for coating a substrate with a coating as described above whereby at least the coating portion A and/or the coating portion B of the (AI,Ti)N coating are/is deposited by means of PVD techniques.

Abstract: A method of treating a surface of at least one part by individual sources of an electron cyclotron resonance plasma is characterized by subjecting the part(s) to at least one movement of revolution with regard to at least one fixed linear row of elementary sources. The linear row or rows of elementary sources are disposed parallel to the axis or axes of revolution of the part or parts.

Abstract: Embodiments relate to applying a magnetic field across the paths of injected polar precursor molecules to cause spiral movement of the precursor molecules relative to the surface of a substrate. When the polar precursor molecules arrive at the surface of the substrate, the polar precursor molecules make lateral movements on the surface due to their inertia. Such lateral movements of the polar precursor molecules increase the chance that the molecules would find and settle at sites (e.g., nucleation sites, broken bonds and stepped surface locations) or react on the surface of the substrate. Due to the increased chance of absorption or reaction of the polar precursor molecules, the injection time or injection iterations may be reduced.

Abstract: A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe.

Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.

Abstract: The invention relates to a linear plasma system. The linear plasma system includes a number of troughs of an electrode alternating with a number of peaks of the electrode forming a sawtooth shape, a reactive gas feed, a precursor gas feed, and a power source. The reactive gas feed is disposed on the electrode and configured to continuously release a reactive gas into an array of holes located at the trough apex. The precursor gas feed is disposed on the electrode and configured to continuously release a precursor gas into an array of holes located at the peak apex. The power source is configured to apply radio frequency power to the electrode to simultaneously interact with the reactive gas mixed with the precursor gas to generate plasma, which is used to create a product that is deposited on a substrate.

Abstract: A microwave-excited plasma device is proposed. The device comprises of a plurality of microwave plasma reaction units which are capable of generating plasma independently such that a large-area plasma is able to be generated by all of the units. Besides, the high cost of the large-area microwave coupling window and its deformation together with possible breakage caused by atmospheric pressure can be prevented. Moreover, when a plurality of permanent magnets is assembled upon each of the plasma reaction units, the microwave-excited plasma device is improved to be a large-area electron cyclotron resonance (ECR) plasma device.

Abstract: The present invention is a high-throughput, ultraviolet (UV) assisted metalorganic chemical vapor deposition (MOCVD) system for the manufacture of HTS-coated tapes. The UV-assisted MOCVD system of the present invention includes a UV source that irradiates the deposition zone and improves the thin film growth rate. The MOCVD system further enhances the excitation of the precursor vapors and utilizes an atmosphere of monatomic oxygen (O) rather than the more conventional diatomic oxygen (O2) in order to optimize reaction kinetics and thereby increase the thin film growth rate. In an alternate embodiment, a microwave plasma injector is substituted for the UV source.

Abstract: Disclosed are methods and associated apparatus for depositing layers of material on a substrate (e.g., a semiconductor substrate) using ionized physical vapor deposition (iPVD). Also disclosed are methods and associated apparatus for plasma etching (e.g., resputtering) layers of material on a semiconductor substrate.

Abstract: A method and apparatus are provided for processing a substrate with a radiofrequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling elements and feed gas holes interspersed among the inductive coupling elements. The thin windows, magnetic flux concentrators, and interspersed feed gas holes are useful to effectuate uniform processing, high power transfer efficiency, and a high degree of coupling between the applicator and plasma. In some embodiments, capacitive current is suppressed using balanced voltage to power an inductive coupling element.

Abstract: A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.

Abstract: Enhanced corrosion resistance is achieved in a coating by using a germanium-containing precursor and hollow cathode techniques to form a first layer directly on the surface of a workpiece, prior to forming an outer layer, such as a layer of diamond-like carbon (DLC). The use of a germanium or germanium-carbide precursor reduces film stress and enables an increase in the thickness of the subsequently formed DLC. Germanium incorporation also reduces the porosity of the layer. In one embodiment, a cap layer containing germanium is added after the DLC in order to further reduce the susceptibility of the coating to chemical penetration from the top.

Abstract: [Problems] To have a thin film suitably function even when the thickness of the thin film is reduced. [Means for Solving Problems] Provided is a method for manufacturing a magnetic recording medium by forming a thin film on a substrate (12). The method is provided with a thin film forming step of forming the thin film by using a substance brought into the plasma state as a material. In the thin film forming step, the thin film is formed by using a material substance gathering means (30) for gathering the substance brought into the plasma state to the periphery of the substrate. The material substance gathering means (30) gathers the substance brought into the plasma state, for instance, to the periphery of the substrate (12) by generating a magnetic field at the periphery of the substrate (12).

Abstract: A carbon coated aluminum foil as a cathode of solid aluminum electrolytic capacitors and a manufacturing method thereof are revealed. A surface of an aluminum foil is hit by ions turned into a rough surface. Then carbon atoms are mounted into the surface of the aluminum foil and accumulated sequentially to form a carbon film on the surface of the aluminum foil. Thus the carbon atoms are attached to the surface of the aluminum foil firmly due to the roughness of the surface. Moreover, the carbon film has good adhesion and electrical conductivity. Therefore, not only mechanical strength of the aluminum foil is increased dramatically, the electrical conductivity, capacitance ratio, power density and use life of capacitors are also improved significantly.

Abstract: The present invention provides an appliance for chip removal applications comprising a vibration-damping material wherein the vibration-damping material is a material arranged by nano-dimensional cluster form. The present invention additionally provides a method for manufacturing said appliance. The present invention provides also an appliance obtainable by said method. Additionally the present invention provides an article or work piece for use in an appliance for chip removal applications. Also a computer program is provided for controlling the above method.

Abstract: A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe.

Abstract: A coated article includes a substrate and a pattern layer formed on the substrate. The pattern layer includes a plurality of strips. Each area of these strips is in a range of about 0.001 mm2 to about 0.025 mm2 A distance between two adjacent strips is in a range of about 0.02 mm to about 0.04 mm.

Abstract: Provided is a rotary magnet sputtering apparatus that reduces an adverse effect due to heating of a target portion and so on caused by an increase in plasma excitation power. The rotary magnet sputtering apparatus has a structure in which the heat is removed from the target portion by causing a cooling medium to flow in helical spaces formed between a plurality of helical plate-like magnet groups or by providing a cooling passage in a backing plate which supports the target portion.

Abstract: A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber and multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites. A system and method for generating a plasma are also described.

Abstract: Methods and apparatus for depositing thin films having high thickness uniformity and low resistivity are provided herein. In some embodiments, a magnetron assembly includes a shunt plate, the shunt plate rotatable about an axis, an inner closed loop magnetic pole coupled to the shunt plate, and an outer closed loop magnetic pole coupled the shunt plate, wherein an unbalance ratio of a magnetic field strength of the outer closed loop magnetic pole to a magnetic field strength of the inner closed loop magnetic pole is less than about 1. In some embodiments, the ratio is about 0.57. In some embodiments, the shunt plate and the outer close loop magnetic pole have a cardioid shape. A method utilizing RF and DC power in combination with the inventive magnetron assembly is also disclosed.

Abstract: The invention is upon anti-static wrapper; specifically upon a new technology to manufacture anti-static wrapper using new materials which is different from those manufacture by spreading a surfactant or metallic materials. The aim of this invention is to manufacture a new and semi-permanent anti-static wrapper with excellent electric dissipation and adhesion to polymer film by depositing DLC film on polymer film. This invention also supplies the magnetic enhancing ion gun (MEIG) depositing device and high productive Roll-to-Roll device in which DLC film can be deposited on polymer film.

Abstract: Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.

Abstract: The invention relates to a linear plasma system. The linear plasma system includes a number of troughs of an electrode alternating with a number of peaks of the electrode forming a sawtooth shape, a reactive gas feed, a precursor gas feed, and a power source. The reactive gas feed is disposed on the electrode and configured to continuously release a reactive gas into an array of holes located at the trough apex. The precursor gas feed is disposed on the electrode and configured to continuously release a precursor gas into an array of holes located at the peak apex. The power source is configured to apply radio frequency power to the electrode to simultaneously interact with the reactive gas mixed with the precursor gas to generate plasma, which is used to create a product that is deposited on a substrate.

Abstract: The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like.

Abstract: Disclosed is a method relating to graded-composition barrier coatings comprising first and second materials in first and second zones. The compositions of one or both zones vary substantially continuously across a thickness of the zone in order to achieve improved properties such as barrier, flexibility, adhesion, optics, thickness, and tact time. The graded-composition barrier coatings find utility in preventing exposure of devices such as organic electro-luminescent devices (OLEDs) to reactive species found in the environment.

Abstract: A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen.

Abstract: A method and apparatus for forming thin film materials via a plasma deposition process in the presence of a magnetic field. A precursor is delivered to a deposition chamber and activated to form a plasma. The plasma may be initiated in the presence of a magnetic field or subjected to a magnetic field after initiation. The plasma includes ionized and neutral species derived from the precursor and the magnetic field manipulates the plasma to effect a reduction in the population of ionized species and an enhancement of the population of neutral species. A thin film material is subsequently formed from the resulting neutral-enriched deposition medium. The method permits formation of thin film materials having a low density of defects. In one embodiment, the thin film material is a photovoltaic material and the suppression of defects leads to an enhancement in photovoltaic efficiency.

Abstract: A novel submount for the efficient dissipation of heat away from a semiconductor light emitting device is described, which also maintains efficient electrical conductivity to the n and p contacts of the device by separating the thermal and electrical conductivity paths. The submount comprises at least the following constituent layers: a substrate (400) with thermally conductive properties; a deposited layer (402) having electrically insulating and thermally conducting properties disposed on at least a region of the substrate having a thickness of between 50 nm and 50 microns; a patterned electrically conductive circuit layer (404) disposed on at least a region of the deposited layer; and, a passivation layer at least partially overcoating a top surface of the submount. Also described is a light emitting module employing the substrate and a method of manufacture of the submount.

Abstract: A plasma CVD device that deposits a thin film without using a filament is provided. The plasma CVD device according to the present invention includes: a chamber (1); ring-shaped ICP electrodes (17) and (18) disposed within the chamber; first high-frequency power supplies (7) and (8) electrically connected to the ICP electrodes; a gas supply mechanism that supplies a raw material gas into the chamber; an evacuation mechanism that evacuates the chamber; a disc substrate (2) disposed within the chamber so as to face the ICP electrodes; a second high-frequency power supply (6) connected to the disc substrate; an earth electrode disposed within the chamber on the opposite side of the disc substrate so as to face the ICP electrodes; and plasma walls (24) and (25) disposed within the chamber and provided so as to surround a space between the ICP electrodes and the disc substrate. Here, the plasma wall is set at a float potential.

Abstract: Embodiments of the invention include a selective deposition method that allows for coating of selective portions of an object, such as an electronic device, and inhibits coating of other selective portions of the object, such as the electric contacts. The selective deposition method includes providing a web to transport the object through a deposition chamber. The web may include and reference mechanisms to register the object relative to the web. The method further includes providing deposition material and a shadow mask that has open spaces in it to inhibit coating selective portions of the object. The deposition material serves as the coating material.

Abstract: Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the silicon nitride film on a process target substrate by use of plasma of raw material gas containing silicon and hydrogen and of nitrogen gas, ion energy for disconnecting nitrogen-hydrogen bonding representing a state of bonding between the hydrogen in the raw material gas and the nitrogen gas is applied to the process target substrate so as to reduce an amount of nitrogen-hydrogen bonding contained in the silicon nitride film.

Abstract: A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry.