Abstract: This invention provides a process and apparatus for producing a carbonaceous film such as a DLC film using a solid raw material without the need to supply a high energy radiation such as a laser beam. The process comprises providing a solid organic material as a raw material, applying a discharge energy to the material to form plasma, and depositing the plasma onto a base material to form a carbonaceous film. This process is preferably carried out by using a film production apparatus (1) comprising discharge means (10). The discharge means (10) comprises a pair of electrodes (a raw material holder) (12, 14) for holding a raw material (50) and voltage applying means (20) for applying voltage across the electrodes.

Abstract: The invention relates to a coating comprising a getter metal alloy and to an arrangement and method for the production thereof. The coating therein consists of a non-vaporizing getter metal alloy (2) for an inner wall (3) of a high-vacuum vessel (4). The arrangement basically consists of a metal plasma generator (7), which in turn comprises an insulator member (8), which carries an ignition electrode (9) and a cathode wire (10) comprising a getter metal alloy (2). Those three components are surrounded by a cage-like anode member (13), which together with the insulation member (8) projects into the high vacuum vessel (5) to be coated and is supplied with cathode potential (12), high-voltage ignition pulse (19) and anode potential (14) by a voltage supply device (16), the anode member (13) together with the high-vacuum vessel (4) being held at ground potential.

Abstract: A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.

Abstract: A method and apparatus for forming thin film materials via a plasma deposition process in the presence of a magnetic field. A precursor is delivered to a deposition chamber and activated to form a plasma. The plasma may be initiated in the presence of a magnetic field or subjected to a magnetic field after initiation. The plasma includes ionized and neutral species derived from the precursor and the magnetic field manipulates the plasma to effect a reduction in the population of ionized species and an enhancement of the population of neutral species. A thin film material is subsequently formed from the resulting neutral-enriched deposition medium. The method permits formation of thin film materials having a low density of defects. In one embodiment, the thin film material is a photovoltaic material and the suppression of defects leads to an enhancement in photovoltaic efficiency.

Abstract: The present invention provides method and process for forming a barrier layer on a flexible substrate. The continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process includes depositing a barrier layer adjacent the substrate by exposing at least one portion of the substrate that is within the processing chamber to plasma comprising a silicon-and-carbon containing precursor gas. The present invention is further directed to a coated flexible substrates comprising a barrier layer based on the structural unit SiC:H. The barrier layer possesses high density and low porosity. Still further, the barrier layer exhibits low water vapor transmission rate (WVTR) in the range of 10?2-10?3 g.m?2d?1 and is appropriate for very low permeability applications.

Abstract: A method and apparatus are provided for processing a substrate with a radiofrequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling elements and feed gas holes interspersed among the inductive coupling elements. The thin windows, magnetic flux concentrators, and interspersed feed gas holes are useful to effectuate uniform processing, high power transfer efficiency, and a high degree of coupling between the applicator and plasma. In some embodiments, capacitive current is suppressed using balanced voltage to power an inductive coupling element.

Abstract: A method is disclosed for forming a film of an amorphous material, for example amorphous silicon, on a substrate (14), by deposition from a plasma. A substrate is placed in an enclosure having a defined volume, and a film precursor gas, for example silane, is introduced into the enclosure through pipes (20). Unreacted and dissociated gas is extracted from the enclosure through exit (22) so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distribution electron cyclotron resonance, and cause material to be deposited from the plasma on the substrate. The normalised precursor gas flow rate, defined as the precursor gas flow rate, divided by the area of the distributed plasma source, is greater than or equal to 700 sccm/m2, and the gas residence time, defined as the volume of the reactor divided by the effective precursor gas pumping rate, is not more than 30 ms.

Abstract: The cross section of a beam is flattened by causing a plasma beam (25) extracted by a convergence coil from a plasma gun to pass through the magnetic field that extends to the direction orthogonal to the direction in which the plasma beam travels and is formed by magnets (27) made of permanent magnets which are oppositely arranged in pairs in parallel with each other. A plasma apparatus is provided using a plasma beam with 0.7?Wi/Wt with a half-value of beam intensity with respect to a width Wt of a flattened beam 28 as Wi. At least one magnet is included which is stronger in intensity of a repulsive magnetic field at the center of the beam.

Abstract: A deposition apparatus includes a plasma generating unit that generates an arc discharge between a target and an anode to generate plasma; a deposition chamber in which a base is disposed; and a plasma transfer unit that transfers the plasma to the deposition chamber, wherein at least part of the plasma transfer unit is electrically separated from the plasma generating unit and the deposition chamber, and a negative voltage is applied to at least part of the plasma transfer unit.

Abstract: An antenna assembly for forming a barrier coating on the inner surface of a tube by means of a sealed annular chemical-plasma-reaction chamber defined by the inner wall of the tube, two spaced elements slidingly and sealingly moveable inside the tube, and a quartz tube that interconnects the cylindrical elements. The coating is formed by a PE CVD process generated inside the chamber by a transversal RF antenna unit which creates a plasma column that participates in rotation simultaneously with linear motion thus providing uniform coating of the inner surface of the tube. The method of the invention consists of depositing a layer of silicon dioxide onto the inner surface of a plastic tube by means of the aforementioned antenna assembly. The plasma column is rotated by the RF magnetic field which is rotated by using two RF generators of different frequencies that energize two groups of specifically interconnected coils.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: The invention provides systems and methods for the deposition of an improved diamond-like carbon material, particularly for the production of magnetic recording media. The diamond-like carbon material of the present invention is highly tetrahedral, that is, it features a large number of the sp3 carbon-carbon bonds which are found within a diamond crystal lattice. The material is also amorphous, providing a combination of short-range order with long-range disorder, and can be deposited as films which are ultrasmooth and continuous at thicknesses substantially lower than known amorphous carbon coating materials. The carbon protective coatings of the present invention will often be hydrogenated. In a preferred method for depositing of these materials, capacitive coupling forms a highly uniform, selectively energized stream of ions from a dense, inductively ionized plasma.

Abstract: A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.

Abstract: A method of coating a substrate by thermal application of the coating materials using a plasma jet is disclosed. The properties of the plasma jet are determined by controllable process parameters. The coating material and a process gas mixture are injected into the plasma jet where the coating material is partly or completely evaporated depending on the controllable parameters. The phases of the coating material present in vapor and, optionally, condensed form are at least partly deposited on the substrate. A diagnostic measuring method determines the relative proportion of vapor and/or condensed phase for the coating material transported in the plasma jet. The controllable process parameters are set with respect to desired values using such measured data. Regulation of direct manufacture of the coating, particularly a multi-layer coating system, is carried out with respect to these desired values, which correspond to a predetermined vapor or condensed phase proportion.

Abstract: A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the apparatus is a pulsing plasma source that is capable of either exciting or not-exciting a first precursor. The pulsing plasma source includes an energy source to generate a plasma, and a plasma adjusting system to cause the plasma to either excite or not-excite a precursor. The precursor could flow continuously (an aspect totally new to ALD), or intermittently (or pulsing, standard ALD operation process). The deposition method includes the steps of pulsing the plasma to excite/not-excite the precursors and the ambient to deposit and modify the deposited layers. This procedure then can be repeated until the film reaches the desired thickness.

Abstract: Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes (SWNTs) on a catalyst-free substrate, by injection of microwave power into a deposition chamber comprising a magnetic confinement structure with a magnetic mirror, and at least one electron cyclotron resonance area inside or at the border of the deposition chamber and facing the substrate, whereby dissociation and/or ionization of a gas containing carbon is caused, at a pressure of less than 10?3 mbars, in the magnetic mirror at the center of the deposition chamber, producing species that will be deposited on said heated substrate. The substrate surface includes raised and/or lowered reliefs. The invention concerns the SWNTs thus obtained.

Abstract: A device (1) for amplifying the current of an abnormal electrical discharge, characterized in that it comprises an electrode which is positively polarized (2) and associated with a magnetic circuit (3) producing a magnetic field (4) which is uniformly divergent, whereby the intensity on the surface of the electrode is more than approximately 6.102 Tesla, the electrode being positioned in the region where the magnetic field is at its most intense.

Abstract: A process makes at least one nanotube between two electrically conducting elements located on a substrate, using, inside a deposition chamber, a microwave power, a magnetic field, and at least one electronic cyclotron resonance zone faciliting ionization and/or dissociation of a gas containing carbon injected into the deposition chamber at a low pressure inside the deposition chamber, causing ionization and/or dissociation of this gas in each electronic cyclotron resonance zone. The ions and electrons produced are located along the field lines of the magnetic field set up in the deposition chamber. The process also includes a screening operation of the various species produced in each electronic cyclotron resonance zone to enable exclusive access of CxHy°non condensable free radicals produced to access a deposition zone adjacent to at least one part of the substrate including the two electrically conducting elements to make the nanotube.

Abstract: A method for the deposition of a metal layer on a substrate (1) uses a cold plasma inside an enclosure (7) heated to avoid the formation of a metal deposit at its surface. The enclosure has an inlet (21) and an outlet (22) for the substrate with a source of metal vapor between them, made up of an electrode to form a plasma (6) with the substrate or a separate electrically conducting element as a counter-electrode. The deposition metal is introduced in the liquid state in a retention tank (8) and is maintained as a liquid at an essentially constant level during the formation of the metal layer on the substrate. An Independent claim is included for the device used to put this method of coating a substrate into service.

Abstract: Methods and equipment for depositing films. In certain embodiments, there is provided a deposition chamber having a substrate-coating region and an electrode-cleaning region. In these embodiments, an electrode is positioned in the deposition chamber and has an interior cavity in which first and second magnet systems are disposed. In certain embodiments, there is provided a method for depositing films onto substrates using a deposition chamber of the described nature. The invention also provides electrode assemblies for film-deposition equipment. In certain embodiments, the electrode assembly comprises a rotatable electrode (optionally having an outer coating of carbon or the like) having an interior cavity, with stationary first and second generally-opposed magnet systems being disposed in this interior cavity.

Abstract: A method of forming an insulating ceramic film or a metallic film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave.

Abstract: An apparatus includes a low magnetic-coercivity layer of material (LMC layer) having a majority electron-spin-polarization (M-ESP), an energy-gap coupled with the LMC layer, wherein a flow of spin-polarized electrons having an electron-spin-polarization anti-parallel to the LMC layer are injected via the energy-gap, to change the M-ESP of the LMC layer. A non-magnetic material is in electrical communication with the LMC layer and provides a spin-balanced source of current to the LMC layer, responsive to the injection of spin-polarized electrons into the LMC layer.

Abstract: A diamond foam article comprises diamond deposited material on a substrate having an open contiguous structure at least partially filled with a filler material. Methods for forming a diamond foam article comprise providing a foam substrate; preparing the foam substrate for diamond deposition; depositing diamond material on the foam substrate by one of several diamond deposition methods; and at least partially filling the diamond foam article with a filler material. Diamond foam articles are bonded to other components.

Abstract: A film comprising an i-carbon is formed by converting a reactive gas containing a carbon compound gas into plasma by a resonance using a microwave and a magnetic field.

Abstract: A composite material having a substrate material and at least one barrier coating on one side of the substrate material. The barrier coating is plasma impulse chemical vapor deposited (PICVD) to the substrate material. The barrier coating includes at least one of material selected from the group consisting of SiOx, TiOx, SnOx, Si3Ny, Nb2Oy, and Al2Oy.

Abstract: An object of the present invention is to provide a manufacturing apparatus and method for a carbon nanotube, by which it is possible to efficiently synthesize a high purity carbon nanotube on an industrial basis.

Abstract: In the method for the coating of a substrate (3), a hybrid coating method is carried out with a thermal process jet (2) which makes it possible to combine the properties of a thermal spray method with those of a reactive vapour phase deposition. The properties of the process jet are determined by controllable process parameters, in particular by the parameters of pressure, enthalpy, composition of a process gas mixture (G) and composition and form of application of a coating material (M). The coating material is partly or completely evaporated in dependence on the controllable parameters. The phases of the coating material present in vapour form (23b) and, optionally, in condensed, i.e. solid or liquid form, (23a) are at least partly deposited on the substrate. The relative proportion of vapour and/or of condensed phase for the coating material (23) transported in the process jet is determined by a diagnostic measuring method (D).

Abstract: A process and an arrangement by means of which it is possible to generate a layer system for the protection against wear, for the protection against corrosion and for improving the sliding properties or the like, which has an adhesive layer for the arrangement on a substrate, a transition layer for the arrangement on the adhesive layer and a cover layer of an adamantine carbon, the adhesive layer including at least one element from the Group which contains the elements of the 4th, 5th and 6th Subgroup and silicon, the transition layer comprising carbon and at least one element from the above-mentioned Group, and the cover layer consisting essentially adamantine carbon, the layer system having a hardness of at last 15 GPa, preferably at least 20 GPa, and an adhesion of at least 3 HF.

Abstract: A method is disclosed for substantially uniformly coating an interior surface of a ferromagnetic tubular structure such as a ferromagnetic tube having a high aspect ratio. The method entails inducing a magnetic field of a given magnitude within the tubular structure. Further, a bias is applied at a given voltage to the tubular structure. Then, the interior surface of the tubular structure is exposed to a gaseous precursor material under conditions effective to convert a quantity of the gaseous precursor material to ionize gaseous precursor material. The given magnitude and voltage is such that it is effective to deposit the ionized the gaseous precursor material onto the interior surface and converts the ionized gaseous precursor material to a substantially uniform protective coating in the interior surface.

Abstract: Process and device for depositing, by electron cyclotron resonance plasma, a web of carbon nanofibres or nanotubes, on a substrate without a catalyst, by injection of a microwave power into a deposition chamber including a magnetic structure with a highly unbalanced magnetic mirror and at least one electron cyclotron resonance zone within the interior of the deposition chamber itself and opposite the substrate. Under a pressure of less than 10−4 mbar, ionization and/or dissociation of a gas containing carbon is induced in the magnetic mirror in the center of the deposition chamber, thus producing species that deposit on the substrate, which is heated.

Abstract: Briefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.

Abstract: In general, in one aspect, the invention features a method that includes exposing a surface to a first gas composition under conditions sufficient to deposit a layer of a first chalcogenide glass on the surface, and exposing the layer of the first chalcogenide glass to a second gas composition under conditions sufficient to deposit a layer of a second glass on the layer of the first chalcogenide glass, wherein the second glass is different from the first chalcogenide glass.

Abstract: The present invention provides a method to control the magnetic alloy-encapsulated carbon-base nanostructures apply an appropriate amount of magnetic field during magnetic alloy-encapsulated nanostructure deposition and post treatment for improved magnetic anisotropy by electron cyclotron resonance chemical vapor deposition (ECR-CVD), the catalyst and additive on surface of substrate use DC bias and heating treatment and then etching the substrate during plasma pretreatment. The present invention is to provide control of the size and shape of the nanostructures, capability to be effectively manipulated the magnetic anisotropy and coercive force of the encapsulated magnetic nanoparticles, capability to store the magnetic signals with nano-resolution.

Abstract: A method for producing semiconductor devices and a production apparatus having a superior ability to control the process are disclosed. In an embodiment according to this invention, a surface of a semiconductor substrate is processed using a process gas excited by two electromagnetic waves with their powers change separately and periodically, keeping a predetermined timing relationship with each other. In addition, a bias with a voltage that also changes periodically, keeping a predetermined relationship with change of the electromagnetic waves, can be applied to the substrate. Further, the process is controlled by monitoring an optical emission from the process gas synchronously with the periodic change of the electromagnetic wave or the bias.

Abstract: A method for forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field is described, characterized by that the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave of an electromagnetic wave having the same or different wavelength as that of the pulsed wave. The process enables deposition of a uniform film having an excellent adhesion to the-substrate, at a reduced power consumption.

Abstract: A method for making an integrated photonic device involves depositing buffer, core and cladding layers on the front side of a wafer. A thick tensile stress layer is deposited on the back side of the wafer just prior to performing a high temperature thermal treatment above 600° C. on the cladding layer to prevent the cracking of the layers as a result of the thermal treatment.

Abstract: A plasma processing method which supplies plasma processing gas into a plasma process chamber, sets the pressure inside the plasma process chamber to the preset value, and generates plasma by capacitatively coupled discharge, emission of electromagnetic wave by radio frequency displacement current and formation of magnetic field, thereby processing a substrate. The plasma processing controls the radiated electromagnetic wave power by the radio frequency displacement current control means forming a resonant circuit, and processing a substrate while plasma distribution is controlled during plasma processing.

Abstract: An apparatus for processing a workpiece with a plasma includes a plasma chamber having an interior processing space, a plasma generating assembly, a gas supply system communicated to the chamber and operable to supply one or more gasses to the processing space, and a vacuum system communicated to the chamber and operable to remove gas from the chamber. A magnet assembly having a plurality of magnets and being constructed and arranged to hold the plurality of magnets in a predetermined configuration is rotatably mounted within the chamber so that the plurality of magnets are positioned to impose a magnetic field on a plasma within the processing space.

Abstract: Method for coating workpieces generates a beam of a plasma in an evacuated container. A region of highest plasma density is at the beam axis and workpieces having surfaces to be coated, are radially offset from, and extend along the axis with the surfaces facing the axis and being in the container. Fresh reactive gas is inlet into the container and consumed gas is removed from the container. Coating material is deposited upon the surfaces with a deposition rate of at least 400 nm/min and at a maximum temperature of the surfaces being 550° C.

Abstract: Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes on a catalyst-free substrate, by injection of microwave power into a deposition chamber comprising a magnetic confinement structure with a magnetic mirror, and at least one electron cyclotron resonance area inside or at the border of said deposition chamber and facing said substrate, whereby dissociation and/or ionization of a gas containing carbon is caused, at a pressure of less than 10−3 mbars, in said magnetic mirror at the center of the deposition chamber, producing species that will be deposited on said heated substrate; process in which the substrate surface includes raised and/or lowered reliefs.

Abstract: A method for producing flat panels for TFT or plasma display applications includes forming a sputter source within a sputter coating chamber, the source having at least two electrically mutually isolated stationery bar-shaped target arrangements. A controlled magnet arrangement provided under each target with a time-varying magnetron field.

Abstract: Methods and apparatus are provided for uniformly depositing a coating material from a vaporization source onto a powdered substrate material to form a thin coalescence film of the coating material that smoothly replicates the surface microstructure of the substrate material. The coating material is uniformly deposited on the substrate material to form optical interference pigment particles. The thin film enhances the hiding power and color gamut of the substrate material. Physical vapor deposition process are used for depositing the film on the substrate material. The apparatus and systems employed in forming the coated particles utilize vibrating bed coaters, vibrating conveyor coaters, or coating towers. These allow the powdered substrate material to be uniformly exposed to the coating material vapor during the coating process.

Abstract: An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The high deposition speed is attributed to the cyclotron resonance while the high performance is attributed to the CVDs.

Abstract: A method of synthesizing metal doped carbon films by placing a substrate in a chamber with a selected amount of a metalorganic compound. An electron cyclotron resonance is applied to the chamber in order to vaporize the metalorganic compound. The resonance is applied to the chamber until a metal doped carbon film is formed. The metalorganic compound is preferably selected from the group consisting of an organic salt of ruthenium, palladium, gold or platinum.

Abstract: A method of plasma generation is provided in which the application of a static magnetic field perpendicular to the direction of the RF electric field allows for the propagation of an electromagnetic wave from a coil outside the chamber, through a dielectric window and into the plasma. The RF electric field and the DC magnetic field are both in the plane of the dielectric window in what may be called a planar helicon configuration. Due to magnetic field effects, the electromagnetic wave excites an electron cyclotron wave that heats the electrons by mode conversion of the whistler wave a few centimeters from the dielectric window where a mode conversion relationship among characteristic antenna wavelength, generator frequency, magnetic field strength and plasma electron density is satisfied The curvature of the magnetic field lines generates plasma flows that expel the plasma towards the processing space.

Abstract: A method of forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave.

Abstract: The present invention provides methods and apparatus for the formation of a thin noble metal film which can achieve a high rate of film growth, can use inexpensive raw materials, and do not allow any impurities to remain in the thin film.

Abstract: Methods and apparatus are provided for uniformly depositing a coating material from a vaporization source onto a powdered substrate material to form a thin coalescence film of the coating material that smoothly replicates the surface microstructure of the substrate material. The coating material is uniformly deposited on the substrate material to form optical interference pigment particles. The thin film enhances the hiding power and color gamut of the substrate material. Physical vapor deposition process are used for depositing the film on the substrate material. The apparatus and systems employed in forming the coated particles utilize vibrating bed coaters, vibrating conveyor coaters, or coating towers. These allow the powdered substrate material to be uniformly exposed to the coating material vapor during the coating process.

Abstract: A substrate processing device in which a film is formed on a substrate while a magnetic field, by a magnet arranged in the periphery of a substrate holder, is imparted on to the surface of a substrate mounted on the substrate holder while the substrate holder is rotated, wherein a rotation mechanism for the magnet and a rotation mechanism for the substrate holder are independently provided and controlled and, furthermore, in that it is provided with a device for detection of the magnetic field orientation, a device for detection of the prescribed orientation of the substrate, and a mechanism which, using the output of said two detection devices, affords rotation in which the prescribed direction of the substrate and the direction of the magnetic field are aligned within a prescribed angle.

Abstract: A method for achieving a highly uniform plasma density on a substrate by shaping an induced electric field including the steps of positioning the substrate in a processing chamber, supplying a high frequency power to a spiral antenna generating an induced electric field in the processing chamber, generating a plasma in the processing chamber, and shaping the electric field with respect to the substrate to achieve a uniform distribution of plasma on the substrate being processed.