Abstract: Embodiments of the present invention relate to apparatuses and methods for fabricating electrochemical cells. One embodiment of the present invention comprises a single chamber configurable to deposit different materials on a substrate spooled between two reels. In one embodiment, the substrate is moved in the same direction around the reels, with conditions within the chamber periodically changed to result in the continuous build-up of deposited material over time. Another embodiment employs alternating a direction of movement of the substrate around the reels, with conditions in the chamber differing with each change in direction to result in the sequential build-up of deposited material over time. The chamber is equipped with different sources of energy and materials to allow the deposition of the different layers of the electrochemical cell.

Abstract: Installation for depositing, by means of a microwave plasma, a barrier coating on thermoplastic containers (5), this installation comprising treatment stations (1) each comprising a treatment enclosure (2) and a cover (3) and including a vacuum pumping chamber in which connection means (4) for sealed connection to the container comprise a sleeve (6) co-axial with the neck (7) of the container, each cover (3) also supporting an injector (8) co-axial with the sleeve (6) for injecting a reactive fluid into the container; the sleeves (6) and/or the injectors (8), of several adjacent stations are fastened to a single support plate (15, 20) that extends in the form of a bridge over the covers (3) of these stations (1), whereby the plate (15, 20) and the sleeves and/or injectors of the stations (1) constitute a unitary assembly (16, 21) that can be maneuvered as one piece.

Abstract: To form a dense high-quality silicon oxide film (SiO2 film or SiON film) having excellent insulating properties and an etching rate below or equal to 0.11 nm/s when using a 0.5% dilute hydrofluoric acid solution, plasma CVD is performed by setting a pressure within the processing container in the range from 0.1 Pa to 6.7 Pa. and using a process gas containing an SiCl4 gas or an Si2H6 gas, and an oxygen gas, in a plasma CVD apparatus in which plasma is generated by introducing microwaves into a processing container through a planar antenna having a plurality of holes.

Abstract: A plasma processing apparatus (100) includes: a plasma generation means for generating a plasma in a processing chamber (1); a measurement section (60) for measuring an integrated value of the particle number of an active species contained in the plasma and moving toward a processing object (wafer W); and a control section (50) for controlling the apparatus in such a manner as to terminate plasma processing when the measured integrated value has reached a set value. The measurement section (60) measures the particle number of the active species by emitting a predetermined laser light from a light source section (61) toward the plasma, and receiving the laser light in a detection section (63) provided with a VUV monochromator.

Abstract: The present invention relates to an apparatus for carrying out a PCVD process in which one or more doped or undoped glass layers are coated onto the interior of a glass substrate tube. The apparatus comprises an applicator having an inner wall and an outer wall and a microwave guide that opens into the applicator. The applicator extends around a cylindrical axis and which is provided with a passage adjacent to the inner wall, through which the microwaves supplied via the microwave guide can exit, over which cylindrical axis the substrate tube can be positioned, while the applicator is fully surrounded by a furnace that extends over the cylindrical axis.

Abstract: A heavily boron-doped diamond thin film having superconductivity is deposited by chemical vapor deposition using gas mixture of at least carbon compound and boron compound, including hydrogen. An advantage of the diamond thin film deposited by the chemical vapor deposition is that it can contain boron at high concentration, especially in (111) oriented films. The boron-doped diamond thin film deposited by the chemical vapor deposition shows the characteristics of typical type II superconductor.

Abstract: Processes for simultaneously encapsulating multiple optoelectronic devices and/or depositing a barrier film onto multiple substrates suitable for fabrication of optoelectronic devices thereon include the use of a plasma deposition apparatus having multiple pairs of opposing electrodes for deposition of reactants onto the substrate that is used to form the device or the complete device itself. The processes significantly reduce tact time relative to one at a time batch processing that is currently used for manufacturing optoelectronic devices.

Abstract: A method of radical-enhanced atomic layer deposition (REALD) involves alternating exposure of a substrate to a first precursor gas and to radicals, such as monatomic oxygen radicals (O•), generated from an oxygen-containing second precursor gas, while maintaining spatial or temporal separation of the radicals and the first precursor gas. Simplified reactor designs and process control are possible when the first and second precursor gases are nonreactive under normal processing conditions and can therefore be allowed to mix after the radicals recombine or otherwise abate. In some embodiments, the second precursor gas is an oxygen-containing compound, such as carbon dioxide (CO2) or nitrous oxide (N2O) for example, or a mixture of such oxygen-containing compounds, and does not contain significant amounts of normal oxygen (O2).

Abstract: A method and apparatus for coating substrates by means of plasma enhanced vapor deposition are provided, in which at least part of the surroundings of the substrate surface of a substrate to be coated is evacuated and a process gas with a starting substance for the coating is admitted, wherein the coating is deposited by a plasma being ignited by radiating in electromagnetic energy in the surroundings of the substrate surface filled with the process gas. The electromagnetic energy is radiated in by a multiplicity of pulse sequences, preferably microwave or radiofrequency pulses, with a multiplicity of pulses spaced apart temporally by first intermissions, wherein the electromagnetic energy radiated in is turned off in the intermissions, and wherein the intermissions between the pulse sequences are at least a factor of 3, preferably at least a factor of 5, longer than the first intermissions between the pulses within a pulse sequence.

Abstract: The present invention relates to a method for increasing hydrophilicity of part or all of a surface of a polymer substrate to change the ability of a polymer surface to bond, allowing better adhesion or printability, by a surface treatment which increases the surface energy stabilised by several washing steps.

Abstract: A method and apparatus for plasma processing of substrates in a substantially vertical orientation is described. Substrates are positioned on a carrier comprising at least two frames oriented substantially vertically. The carrier is disposed in a plasma chamber with an antenna structure positioned between the substrates. Multiple plasma chambers may be coupled to a transfer chamber with a turntable for directing the carrier to a target chamber. A loader moves substrates between the carrier and a load-lock chamber in which substrates are staged in a substantially horizontal position.

Abstract: What is described here is a method of producing a patterned coating by PECVD without additional production steps. The proposed method produces a moth-eye like macrostructure on a surface by direct deposition. Additionally, the macrostructure may be modulated by a microstructure with a surface texture in the subwavelength range. As a result, protective, antireflective coating comprising a carrier layer consisting of an optically transparent material, which, at least on one surface side, presents antireflective properties with respect the optical wavelengths of the radiation incident on the surface can be produced, as well as surface structures which are the basis for superhydrophobic surface properties.

Abstract: Systems and methods for depositing protection and dielectric layers using a vertical microwave deposition processes are provided. In some embodiments, a microwave antenna is vertically attached to a sidewall of a processing chamber. A substrate can be introduced of placed within the processing chamber in a substantially vertical configuration or in a configuration where the substrate is parallel to a sidewall of the processing chamber. A plasma can be formed with the microwave antenna and various precursor materials, such as precursors that include magnesium or silicon. A processing chamber with multiple sub-chambers is also provided according to some embodiments of the invention. Various sub-chambers can have vertical microwave plasma line sources. Other sub-chambers can providing heating and other processes. At least one substrate supporting member can be used to move the substrate vertically from one sub-chamber to another.

Abstract: A plasma processing apparatus includes: a processing container capable of maintaining an atmosphere having a pressure lower than atmospheric pressure; an evacuation unit reducing a pressure of an interior of the processing container; a gas introduction unit introducing a process gas to the interior of the processing container; a microwave introduction unit introducing a microwave to the interior of the processing container; and a lifter pin ascendably and descendably inserted through a placement platform provided in the interior of the processing container, an end surface of the lifter pin supporting an object to be processed, the object to be processed being supported by the lifter pin at a first position proximal to an upper surface of the placement platform when the microwave is introduced and plasma is ignited, the object to be processed being supported by the lifter pin at a second position after the plasma ignition, the second position being more distal to the placement platform than the first position.

Abstract: An object of the invention is to provide a plasma generating device and method for generating plasma through electrodeless discharge within a long tubule and carrying out a plasma process on the inside of the long tubule. The plasma generating device has a container 1 for containing a long tubule 9, the internal pressure of which can be adjusted, a magnetic field applying means 8 for applying a magnetic field in at least part of the long tubule, and a microwave supplying means 2 for emitting microwaves into the container, and is characterized in that plasma is generated within the long tubule by emitting microwaves into the container in such a state that a magnetic field is applied in at least part of the long tubule.

Abstract: Deposition system and methods for dynamic and static coatings are provided. A deposition system for dynamic coating includes a processing chamber, a non-linear coaxial microwave source, and a substrate support member disposed inside the processing chamber for holding a non-planar substrate. The substrate has a first contour along a first direction and a second contour along a second direction orthogonal to the first direction. The deposition system further includes a carrier gas line for providing a flow of sputtering agents inside the processing chamber and a feedstock gas line for providing a flow of precursor gases. The deposition system for static coating includes a substrate support member disposed inside the processing chamber for holding a non-planar substrate and an array of curved coaxial microwave sources within the processing chamber. The curved coaxial microwave sources are spaced along the second direction to cover the substrate.

Abstract: A process for manufacturing cross-corrugated packings is provided.

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biotechnologically functional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, oxide coatings providing hydrophilicity or oxide/polyethylene glycol coatings providing hydrophilicity can be deposited by the present method, over the interior surfaces of small wells in a plastic micro-plate in order to increase the hydrophilicity of these wells. Filling these channels with a precise amount of liquid consistently can be very difficult. This prevents a water-based sample from beading up and creating bubbles, so that well can fill accurately and completely, and alleviates spillage into other wells which causes contamination.

Abstract: A wafer is disposed in a chamber, a plasma generating space is formed in the chamber, plasma processing is performed to the front surface of the processing object while keeping at least the front surface of the processing object in contact with the plasma generating space. The plasma processing is performed with the plasma generating space being kept in contact with at least the peripheral region of the back surface of the processing object.

Abstract: Pulsated microwaves are supplied to a wave guide tube from a microwave generation unit through a matching circuit. The microwaves are supplied through an inner conductor to a planar antenna member. The microwaves are radiated from the planar antenna member through a microwave transmission plate into space above a wafer within a chamber. An electromagnetic field is formed in the chamber by pulsated microwaves radiated into the chamber from the planar antenna member through the microwave transmission plate, turning an Ar gas, H2 gas and O2 gas into plasma to form an oxide film on the wafer.

Abstract: A system and method for treating a surface of a substrate is described. One embodiment includes a method for depositing a film on a substrate, the method comprising generating a first plurality of power pulses, each of the first plurality of power pulses having a first pulse amplitude, providing the first plurality of power pulses to a first discharge tube, generating a plasma about the first discharge tube using the first plurality of power pulses, sustaining the plasma between each of the first plurality of power pulses such that the plasma is not reignited during each of the first plurality of power pulses, disassociating a feedstock gas using the plasma, and depositing at least a portion of the disassociated feedstock gas onto a substrate.

Abstract: A plasma surface treatment method for performing a surface treatment on a quartz member used under a plasma-exposed environment by using a plasma having an ion energy greater than about 5.3 eV. The plasma has, near a surface of the quartz member, an electron temperature higher than or equal to about 2 eV. Further, in a plasma processing apparatus for generating a plasma by introducing a microwave into a processing chamber through a planar antenna having a plurality of slots, the surface treatment is carried out for about 30-300 seconds by using a plasma of a processing gas containing Ar gas and N2 gas under conditions of a processing pressure lower than or equal to about 15 Pa and a microwave power higher than or equal to about 0.9 W/cm2, the surface treatment being repeated 25 to 2000 times.

Abstract: Disclosed are an apparatus and a method for plasma-supported coating and surface treatment of voluminous parts. The apparatus features a vacuum chamber (3, 20, 32) comprising one or more pumps, a first resonant circuit with a first high frequency generator (5, 17, 28, 40), with an adjustable capacitance and an adjustable inductance of the first resonant circuit, and a first connection for integrating the part (1, 21, 32, 39) into the first resonant circuit, with at least a second resonant circuit with a second high frequency generator (18, 29, 40), with a second connector for integrating the part (1, 21, 32, 39) into the second resonant circuit and an adjustable capacitance and an adjustable inductance of the second resonant circuit. According to the disclosed method the inductance and/or the capacitance of the first and second resonant circuits are determined based on the part (1, 21, 31, 39).

Abstract: A device for producing microwave plasma with a high plasma density. The device comprises at least one microwave supply that is surrounded by an outer dielectric tube. The microwave supply is surrounded by, in addition to the outer dielectric tube, at least one inner dielectric tube that extends inside the outer dielectric tube. The outer dielectric tube and the at least one inner dielectric tube form at least one area that is suitable for receiving and conducting a fluid. The device can be cooled by a fluid. A process gas can be fed into the plasma region by the outer dielectric tube.

Abstract: A container-treatment method, of the type in which the container (12) is disposed inside a chamber (16) which defines a cavity (18) outside the container (12) and which is connected to a Vacuum pumping circuit (50), the interior of the container (12) being connected to the pumping circuit (50). The method includes a preliminary pumping step (E1) which is followed by a treatment step (E2). The preliminary step (E1) includes the following successive phases, namely: an external pumping phase (P1) which produces a drop in the pressure inside the cavity (18) only; and an internal pumping phase (P2) which produces a drop in the pressure inside the container (12) only. A machine used to implement the method is also disclosed.

Abstract: A plasma processing apparatus for plasma-processing a target substrate is provided. The plasma processing apparatus includes a metallic processing container forming a processing space in which a plasma process is performed, and a substrate mounting table provided in the processing space to mount a target substrate thereon, a quartz member which shields a sidewall of the metallic processing container from the processing space and whose lower end extends to a position lower than a substrate mounting surface of the substrate mounting table, an annular member which is made of quartz and is provided between a bottom surface of the quartz member and a bottom wall of the metallic processing container to shield the bottom wall of the metallic processing container from the processing space, and a processing gas inlet part for introducing a processing gas into the processing space from a vicinity of an outer periphery of the substrate mounting table.

Abstract: The invention relates to microelectronics, more particularly, to methods of manufacturing solid-state devices and integrated circuits utilizing microwave plasma enhancement under conditions of electron cyclotron resonance (ECR), as well as to use of plasma treatment technology in manufacturing of different semiconductor structures. Also proposed are semiconductor device and integrated circuit and methods for their manufacturing. Technical result consists in improvement of reproducibility parameters of semiconductor structures and devices processed, enhancement of devices parameters, elimination of possibility of defects formation in different regions, and speeding-up of the treatment process.

Abstract: Methods of making multi-layered, hydrogen-containing thermite structures including at least one metal layer and at least one metal oxide layer adjacent to the metal layer are disclosed. At least one of the metal layers contains hydrogen, which can be introduced by plasma hydrogenation. The thermite structures can have high hydrogen contents and small dimensions, such as micrometer-sized and nanometer-sized dimensions.

Abstract: Conveyor belt bodies having a plastic material or having an upper plastic layer that typically has an elasticity module of between approximately 200 and approximately 900 N/mm2 , the bodies being coated by means of a plasma coating, especially in a plasma produced by microwaves or high frequency, whereby conveyor belts with covering layers are obtained. The covering layer provides the conveyor belts, for example, with increased chemical or scratch resistance or reduces the abrasion thereof. Suitable monomers for the plasma coating are, for example, tetrafluorethylene, 1, 2-difluorethylene, acetylene or hexamethyldisiloxane.

Abstract: The present invention provides a charge exchange member having a new function, which solves problems of fragility of a diamond thin film and a low electron density of a CNTS that are challenges of a charge exchange foil. The present invention relates to a charge exchange device comprising a diamond thin film and a non-woven carbon nanotube sheet, in which the diamond thin film is deposited on the non-woven carbon nanotube sheet.

Abstract: According to the present invention, plasma oxidation processing and plasma nitridation processing are applied at the same time to the surface of a semiconductor substrate by plasma using a microwave. After forming an insulating film by the plasma oxynitridation processing as described above, the plasma nitridation processing is further applied to the insulating film as necessary. Thereby, it is possible to form the insulating film with an excellent electrical characteristic.

Abstract: An object to be processed which has silicon on its surface is loaded in a processing chamber. A plasma of a processing gas containing oxygen gas and nitrogen gas is generated in the processing chamber. The silicon on the surface of the object to be processed is oxidized by the plasma, thereby forming a silicon oxide film.

Abstract: An insulating film is formed with a plasma film forming apparatus which includes a vacuum vessel with an electromagnetic wave incident face F, first gas injection holes made in the vacuum vessel, and second gas injection holes made in the vacuum vessel farther away from the electromagnetic wave incident face F than the first gas injection holes. For example, a first gas is introduced from a position whose distance from the electromagnetic wave incident face F is less than 10 mm into the vacuum vessel. A second gas including an organic silicon compound is introduced from a position whose distance from the electromagnetic wave incident face is 10 mm or more into the vacuum vessel.

Abstract: Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 ?m or lower.

Abstract: A device for producing high power microwave plasmas. The device comprises at least one microwave feed that is surrounded by at least one dielectric tube. A dielectric fluid flows through the space between the microwave feed and the outer dielectric tube. The dielectric fluid has a small dielectric loss factor tan ? in the region of between 10?2 to 10?7. A fluid cools at least the outer dielectric tube.

Abstract: A method and an apparatus for producing one or more single crystalline diamonds. One or more diamond seeds are placed in a substrate holder in a chemical vapor deposition (CVD) chamber. One or more metal discs are then positioned in the chemical vapor deposition chamber such that high temperature is generated at low microwave power. A diamond forming gas is then provided adjacent to the one or more diamond seeds. Plasma is then generated from the diamond forming gas by exposing the diamond forming gas to microwave radiation. The one or more diamond seeds are then exposed to the plasma under certain conditions to form single crystalline diamonds. The position of the plasma is manipulated to provide uniform growth conditions at the growth surface of the one or more diamond seeds.

Abstract: A biodegradable resin bottle having a container wall (1) including a biodegradable resin and having a vacuum-evaporated film (3) formed on the inner surface of the container wall (1) by a plasma CVD method. The vacuum-evaporated film (3) includes a first hydrocarbon vacuum-evaporated layer (3a) positioned on the inner surface of the container wall and a second hydrocarbon vacuum-evaporated layer (3b) formed on the above hydrocarbon vacuum-evaporated layer (3a). The first hydrocarbon vacuum-evaporated layer (3a) has polar groups introduced therein. The second hydrocarbon vacuum-evaporated layer (3b) exhibits hydrocarbon peaks stemming from CH, CH2 and CH3 in a region of wave numbers of 3200 to 2600 cm?1 as measured by FT-IR, has a CH2 ratio of not larger than 35% and a CH3 ratio of not smaller than 40% per the sum of CH, CH2 and CH3 calculated from the hydrocarbon peaks, and has no polar group introduced therein.

Abstract: Method and system for functionalizing a collection of carbon nanotubes (CNTs). A selected precursor gas (e.g., H2 or NH3 or NF3 or F2 or CF4 or CnHm) is irradiated to provide a cold plasma of selected target particles, such as atomic H or F, in a first chamber. The target particles are directed toward an array of CNTs located in a second chamber while suppressing transport of ultraviolet radiation to the second chamber. A CNT array is functionalized with the target particles, at or below room temperature, to a point of saturation, in an exposure time interval no longer than about 30 sec. The predominant species that are deposited on the CNT array vary with the distance d measured along a path from the precursor gas to the CNT array; two or three different predominant species can be deposited on a CNT array for distances d=d1 and d=d2>d1 and d=d3>d2.

Abstract: An apparatus and methods for forming a diamond film, are provided. An example of an apparatus for forming a diamond film includes an electrodeless microwave plasma reactor having a microwave plasma chamber configured to contain a substrate and to contain a reactant gas excited by microwaves to generate a microwave plasma discharge. Gas injection ports extend through an outer wall of the plasma chamber at a location upstream of the plasma discharge and above the substrate. Gas jet injection nozzles interface with the gas injection ports and are configured to form a directed gas stream of reactant gas having sufficient kinetic energy to disturb a boundary layer above an operational surface of the substrate to establish a convective transfer of the film material to the operational surface of the substrate.

Abstract: Methods of applying Lotus Effect materials as a (superhydrophobicity) protective coating for external electrical insulation system applications, as well as the method of fabricating/preparing Lotus Effect coatings are discussed. Selected inorganic or polymeric materials are applied on the insulating material surface, and stable superhydrophobic coatings can be fabricated. Various UV stabilizers and UV absorbers can be incorporated into the coating system to enhance the coating's UV stability. Other aspects, features, and embodiments are also discussed and claimed.

Abstract: A description is given of a method for depositing a non-metallic, in particular ceramic, coating on a substrate (2) by means of cold gas spraying, which comprises the method steps of: producing a reactive gas flow (5) comprising at least one reactive gas, injecting into the reactive gas flow (5) particles (4) consisting of at least one material required for producing a non-metallic, in particular ceramic, coating material by reaction with the reactive gas, so as to form a mixture flow of reactive gas and particles (4), producing reactive gas radicals in the mixture flow, and directing the mixture flow comprising reactive gas radicals and particles onto a surface of a substrate (2) to be coated, and so a non-metallic, in particular ceramic, coating is deposited on the surface of the substrate (2). In addition, a description is given of a device (1) for carrying out the method.

Abstract: A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus 1 includes a metal processing chamber 4 configured to accommodate therein a substrate G to be plasma-processed; an electromagnetic wave source 34 that supplies an electromagnetic wave necessary to excite plasma in the processing chamber 4; one or more dielectric members 25 provided on a bottom surface of a cover 3 of the processing chamber 4 and configured to transmit the electromagnetic wave supplied from the electromagnetic wave source 34 into the inside of the processing chamber 4, a portion of each dielectric member 25 being exposed to the inside of the processing chamber 4; and a surface wave propagating section 51 installed adjacent to the dielectric member 25 and configured to propagate the electromagnetic wave along a metal surface exposed to the inside of the processing chamber 4.

Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 ?m to 70 ?m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 ?m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Abstract: The present invention is a multilayer substrate comprising, at least, a single crystal substrate, a diamond film vapor-deposited on the single crystal substrate, wherein the single crystal substrate is a single crystal Ir or a single crystal Rh and a method for producing a multilayer substrate comprising, at least, a step of vapor-depositing a diamond film on a single crystal substrate, wherein a single crystal Ir or a single crystal Rh is used as the single crystal substrate. As a result, there is provided a multilayer substrate having a high quality single crystal diamond film with a large area and with a high crystallinity as a continuous film in which the diamond and the single crystal substrate are not broken and a method for producing the multilayer substrate at low cost.

Abstract: A deposition system and process for the formation of thin film materials. In one embodiment, the process includes forming an initial plasma from a first material stream and allowing the plasma to evolve in space and/or time to extinguish species that are detrimental to the quality of the thin film material. After the initial plasma evolves to an optimum state, a second material stream is injected into the deposition chamber to form a composite plasma that contains a distribution of species more conducive to formation of a high quality thin film material. The deposition system includes a deposition chamber having a plurality of delivery points for injecting two or more streams (source materials or carrier gases) into a plasma region. The delivery points are staggered in space to permit an upstream plasma formed from a first material stream deposition source material to evolve before combining a downstream material stream with the plasma. Injection of different material streams is also synchronized in time.

Abstract: The present invention provides a method to design, manufacture and structure a multi-component energy device having a unified structure, wherein the individual components are chosen from the list consisting of electrochemical cells, photovoltaic cells, fuel-cells, capacitors, ultracapacitors, thermoelectric, piezoelectric, microelectromechanical turbines and energy scavengers. Said components are organized into a structure to achieve an energy density, power density, voltage range, current range and lifetime range that the single components could not achieve individually, i.e. to say the individual components complement each other. The individual components form a hybrid structure, wherein the elements are in electrical, chemical and thermal conduction with each other.

Abstract: A device for locally producing microwave plasma. The device comprises at least one microwave feed that is surrounded by at least one dielectric tube. At least one of the dielectric tubes, such as an outer dielectric tube, is partially surrounded by a metal jacket. A locally delimited plasma is produced by the device by shielding microwaves.

Abstract: A plastic formed article comprising a plastic substrate and a vapor deposited film formed on the surface of the plastic substrate by a plasma CVD method, wherein the vapor deposited film includes an organometal vapor deposited layer having an element ratio C/Si of 2.5 to 13 and an element ratio O/M of not larger than 0.5, and a hydrocarbon vapor deposited layer; and the hydrocarbon vapor deposited layer has a thickness in a range of 40 to 180 nm, exhibits peaks stemming from CH, CH2 and CH3 over a region of wave numbers of 3200 to 2600 cm?1 as measured by FT-IR, and has a CH2 ratio of not larger than 35% and a CH3 ratio of not less than 40%. A film is deposited on a plastic formed article without deteriorated by oxidation, without thermally deformed or without thermally deteriorated not only when PET or polyolefin is used but also when polylactic acid is used as the plastic substrate.

Abstract: In a plasma processing apparatus 10, a microwave transmitted from a microwave source 900 to a coaxial waveguide 600 via a branch waveguide 905 is split into a plurality of microwaves by a branch plate 610 and then transmitted to each internal conductor 315a of a plurality of coaxial waveguides. The microwave transmitted through each internal conductor 315a of the coaxial waveguides is emitted into a processing chamber 100 from each dielectric plate 305 connected with each internal conductor 315a. A desired plasma processing is performed on a substrate G by exciting a processing gas introduced into the processing chamber 100 by the emitted microwave. Expandability for the scale-up is improved by using the plurality of dielectric plates 305. It is possible to design a compact transmission line and supply a low frequency microwave by using the coaxial waveguide in the transmission line.

Abstract: Provided is a plasma processing apparatus including a processing vessel accommodating a target object; a microwave generator configured to generate a microwave; a waveguide configured to induce the microwave to the processing vessel; a planar antenna having a plurality of microwave radiation holes through which the microwave induced to the waveguide is radiated toward the processing vessel; a microwave transmission plate configured to serve as a ceiling wall of the processing vessel and transmit the microwave passed from the microwave radiation holes of the planar antenna; a processing gas inlet unit configured to introduce a processing gas into the processing vessel; and a magnetic field generating unit positioned above the planar antenna and configured to generate a magnetic field within the processing vessel and control a property of plasma of the processing gas by the magnetic field, the plasma being generated by the microwave within the processing vessel.