Abstract: A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.

Abstract: A process for depositing a compound of a metal and a reactive gas includes heating a metal target (32), in an evacuated chamber (22) to a predetermined reaction temperature. The reaction temperature is above a critical temperature which is higher than about half the melting point of the metal but below the vaporization temperature of the metal target. At this reaction temperature, the metal target reacts with the reactive gas to produce, in gaseous form, the compound or a sub-compound of the metal and the reactive gas. The gaseous compound or sub-compound is reacted with the reactive gas on a substrate (36) to form a solid layer of the compound on the substrate.

Abstract: A reactive ionized cluster beam deposition method according to this invention is embodied by utilizing two vacuum subregions partitioned by a partition wall formed with an opening. A closed heating crucible and an ionization accelerating unit are disposed in one vacuum subregion partitioned by the partition wall. A substrate is also disposed in the other vacuum subregion, and at the same time a reactive gas is introduced thereinto. Degrees of vacuums in the two vacuum subregions partitioned by the partition wall are equal to or different from each other. Particularly, a gas concentration in the latter vacuum subregion is enhanced. Then, the ionized cluster beams formed in the former vacuum subregion are introduced into the latter vacuum subregion via the opening of the partition wall and react to the reactive gas within the latter vacuum subregion. The ionized cluster beams reacting to the reactive gas impinge on the substrate, thereby forming the deposited film on the substrate surface.

Abstract: High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300.degree.-350.degree. C., and a pressure of at least 0.8 Torr. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single vacuum system.

Abstract: In the ozone-activated deposition of insulating layers, different growth rates can be achieved on differently constituted surfaces. When the surfaces of the structured silicon substrates lying at different levels are differently constituted or, respectively, are intentionally varied such that the SiO.sub.2 insulating layer grows more slowly on the higher surfaces than on the more deeply disposed surfaces and when deposition is carried out until the surfaces of the rapidly growing and slowly growing layer regions form a step-free, planar level, a local and global planarization is achieved.

Abstract: An amorphous silicon thin film is disclosed, which is produced by plasma CVD in which hydrogen-diluted SiH.sub.4 and N.sub.2 O are supplied during chemical vapor deposition as reacting source gases for the chemical vapor deposition, wherein the degree of hydrogen dilution is from 10 to 20.

Abstract: A thin film forming method comprises the steps of supporting a semiconductor substrate having a trench or an unevenness thereon in a reaction vessel; introducing a reactive gas into the vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least part of the deposit species on the substrate while retaining a pressure in the vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.

Abstract: The present invention relates to a method of forming a coating on a substrate in the absence of oxygen. The method comprises coating the substrate with a solution comprising a solvent and hydrogen silsesquioxane resin. The solvent is evaporated and a preceramic coating thereby deposited on the substrate. The preceramic coating is then heated to a temperature of between about 500.degree. up to about 1000.degree. C. under an inert gas atmosphere. The process of the invention is useful for forming protective coatings on any substrate prone to oxidation. The present invention also relates to the formation of additional coatings on the coating formed above.

Abstract: The present invention relates to a method and an apparatus for forming photovoltaic conversion layers and electrode layers with increased efficiency by forming thin film layers under optimal conditions on a belt-like flexible substrate which is transported by means two interacting rollers. Films are formed on the substrate, which remains stationary during film-formation, in film-forming chambers maintained airtight by walls pressed against the substrate via sealing materials. Furthermore, film-forming chamber walls and a ground electrode contacting one side of the substrate are retracted from the substrate surface to facilitate movement of the substrate to a next film-forming position without being damaged. The apparatus of the present invention allows not only the film-forming time and conditions, as well as the size, of each film-forming chamber to be controlled independently, but it also prevents intermingling of gases present in different film-forming chambers.

Abstract: A process for forming a coating on a surface of a textile fiber, comprising subjecting the fiber surface to first and second process phases while passing the fiber through a reaction medium comprising a cold flowing plasma containing an active species, the first phase including treating the fiber surface in order to increase its adhesive properties, and the second phase including introducing a polymerizable material comprising at least one of a prepolymer and a monomer into the cold flowing plasma in the presence of the fiber under conditions sufficient to induce the formation of a polymerized coating on the fiber surface, polymerization being induced by the active species.

Abstract: A method for producing a glass panel for silicon device fabrication, which method comprises forming a noncrystalline, or mixed-phase, silicon film on a glass substrate, the glass having a strain point greater than 560.degree. C., and subjecting the filmed glass to a heat treatment comprising heating at a temperature of at least 550.degree. C. for a period of time sufficient to convert the silicon film to polycrystalline silicon and to compact the glass.

Abstract: A process for forming a deposition film comprising aluminum comprises the steps of: treating chemically a surface of a substrate having an electron-donative surface and a non-electron-donative surface so as to terminate the electron-donative surface with hydrogen atoms, and thereafter placing the substrate in a space for deposition film formation; introducing gas comprising alkylaluminum hydride and hydrogen gas into the space for deposition film formation; and forming an aluminum film selectively on the electron-donative surface by maintaining the substrate at a temperature in the range of from not lower than the decomposition temperature of the alkylaluminum hydride to not higher than 450.degree. C.

Abstract: Amorphous hydrogenated silicon-carbon alloys having particular usefulness in the preparation of photovoltaic devices, such as solar cells, with improved properties, such as high open circuit voltage with high fill factor and improved blue response, and stability, are provided by the process of depositing the alloy on a substrate maintained at a relatively low temperature below about 260.degree. C. in a vapor deposition chamber, and introducing a gaseous mixture comprising at least one compound having the formula (SiX.sub.3).sub.3 CX.sup.1 wherein each X and X.sup.1 is selected from the group consisting of hydrogen and halogen, and a high proportion of hydrogen, in a ratio by volume of from about 50 parts to about 2000 parts hydrogen to 1 part of (SiX.sub.3).sub.3 CX.sup.1 compound, under deposition conditions of low excitation power density of less than about 50 mw/cm.sup.2, and high pressure of more than about 0.1 torr.

Abstract: A method of manufacturing a flexible amorphous silicon solar cell includes the steps of: a) coating a PI varnish on a glass substrate; b) imidizing the PI varnish film; c) vacuum-depositing a metal film on the PI film; d) vacuum-depositing an amorphous silicon film on the metal film; e) vacuum-depositing a transparent conducting film on the amorphous silicon film; and f) separating the PI film from the glass substrate. The method also provides for preparing the PI varnish by the steps of: 1) preparing a mixed solution of 60-100% by weight aprotic solvent, and 0-40% by weight aromatic solvent; 2) adding into the mixed solution in a mole ratio of 1:9 two aromatic diamines; and 3) further adding in the mixed solution in a mole ratio of 1:5 two aromatic dianhydrides.

Abstract: The present invention relates to the formation of a class of nanocomposite amorphous materials consisting of interpenetrating random networks of predominantly sp3 bonded carbon stabilized by hydrogen, glass-like silicon stabilized by oxygen and random networks of elements from the 1-7b and 8 groups of the periodic table. The materials have high strength and microhardness, flexibility, low coefficient of friction and high thermal and chemical stability. Nanocomposites containing networks of metallic elements can have conductivity variable from insulating dielectric to metallic. The materials have a wide range of applications as protective coatings and as electrically active materials. Metallic nanocomposites can exhibit superconductivity at low temperatures.

Abstract: There is provided a microwave plasma chemical vapor deposition process for forming a functional deposited film on a surface of a substrate by means of microwave plasma chemical vapor deposition conducted in a substantially enclosed film-forming chamber, said film-forming chamber comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said film-forming chamber having a substantially cylindrical discharge space encircled by said substrate surface, said substrate being supported by substrate working means, said film-forming chamber being provided with means for evacuating said film-forming chamber, comprising: (a) longitudinally providing a gas feed pipe provided with a plurality of gas liberation holes at the center position of said discharge space; (b) radiately supplying against said surface of substrate a raw material gas through said plurality of gas liberation holes o

Abstract: The present invention refers to the deposition of thin film coatings produced by plasma-activated chemical vapor deposition of volatile fluorinated cyclic siloxanes of the structure [RR'SiO].sub.x, in which R is a hydrocarbon radical with 1-6 carbon atoms, R' is a fluorinated hydrocarbon radical with 3-10 carbon atoms, the carbon in the alpha and beta positions with respect to the silicon atom is hydrogenated and x is 3 or 4.

Abstract: High quality semiconductor material is deposited in a microwave energized glow discharge deposition process by energizing a process gas with microwave energy at a power level sufficient to generate a plasma at or near the 100% saturation mode and by impeding access of deposition species to the substrate so as to lower the deposition rate to a value less than that otherwise achieved operating at the 100% saturation mode.

Abstract: A method of preparing a coated substrate is disclosed. The substrate is coated with a plasma generated polymer containing Si, Or C and H in specific atom ratio wherein the polymer also contains certain functional groups, A power density of about 10.sup.6 to about 10.sup.8 J/Kg is employed in the plasma polymerization process.

Abstract: A method of providing a silicon film having a roughened outer surface atop a semiconductor wafer comprises: a) placing a semiconductor wafer into a plasma enhanced RF powered chemical vapor deposition reactor; and b) plasma enhanced chemical vapor depositing a layer of silicon over the wafer surface by providing quantities of a silicon source gas, a carrier gas, and TiCl.sub.4 to the reactor, the atomic ratio of the quantities of silicon source gas and TiCl.sub.4 being greater than or equal to 4 at the wafer surface; and by maintaining the reactor at a selected RF power, pressure and temperature; the RF power being supplied at a frequency of at least 5 MHz and preferably at least 10 MHz, the quantities of silicon source gas, RF power, temperature and pressure being effective to produce a predominately silicon film having an outer surface, the quantity of TiCl.sub.

Abstract: A deposited multi-layer device of an electronic element and a plastic substrate on which an inorganic substance thin film layer is simultaneously formed on both surfaces of the substrate wherein each of the electronic element, plastic substrate and inorganic thin film have internal and thermal stress not equal to zero. The device is free from peeling, deformation or curl of the substrate and degradation due to impurities such as acid, alkali and water.

Abstract: A process for the formation of a silicon oxide film, comprising the steps of exciting a gas comprising an organosilane or organosiloxane gas and a gas containing H and OH above a substrate in a reaction chamber to react them with each other in a gaseous phase or on the substrate, thereby depositing a thin film of an organic-group-containing silanol, silanol polymer, or siloxane-bonded polymer on the substrate, and removing the organic groups from the thin film to form a silicon oxide film. Preferably, the formation of a film is conducted while repeating the step of deposition and the step of removing the organic groups through a plasma treatment within an identical chamber, and the film is further heat-treated at a temperature of 450.degree. C. or below. Thus, a good insulating film having a flatness comparable to that of an SOG film can be obtained.

Abstract: Silicon and oxygen containing coatings are deposited by the chemical vapor deposition of hydrogen silsesquioxane in an environment comprising nitrous oxide.

Abstract: An apparatus for depositing a film at atmospheric pressure and a method used for this formation are offered. Radicals are produced inside a space in which an electric discharge is induced. This space is shrouded in a purge gas to isolate the space from the outside air, for preventing the radicals traveling to the surface of a substrate from being affected by the outside air. A magnetic field and a bias voltage are made to act on the produced plasma, so that the radicals can reach the substrate surface with greater ease. The arriving radicals promote the formation of the film on the surface of the substrate.

Abstract: A support containing iron as a major constituent is plasma-treated in an Ar-gas atmosphere containing carbon gas, to form a region on the main surface of the support. This region contains carbon at a high concentration. A plasma is generated in an Si- and N-containing gas atmosphere, to form an SiN ceramic layer on the main surface. The ceramic layer is placed contact with a rich carbon region on the surface of the support. The ceramic layer is firmly adhered to the support, by means of this region.

Abstract: A process for making a composite material wherein carbon reinforcing fibers may be coated with a carbon coating and a silicon carbide coating. The fibers are then densified in a carbon-based matrix, covered by a first silicon carbide layer, optionally sealed by a second silicon carbide coating, then an aluminum nitride or hafnium nitride coating and finally an outer alumina coating are applied. This stainless material can be used as a heat shield for space shuttles.

Abstract: An amorphous semiconductor material which does not age under the action of light is particularly suitable for red-sensitive photovoltaic components and is highly photosensitive. The amorphous semiconductor material is germanium based, particularly a silicon-germanium alloy. To this end, the semiconductor material has a compact, void-free structure, is manufactured in a glow discharge reactor by appropriate variation of the precipitation parameters, and contains one element from Group VI A of the periodic system.

Abstract: A metastable crystal layer is deposited by chemical plasma deposition on diamonds at subatmospheric pressure (10.sup.-3 Torr) at 850.degree.-1050.degree. C. The metastable layer enables the diamond to be metallurgically bonded to a suitable substrate.

Abstract: The oxidation resistance of MCrAlY-type overlay coatings is improved by incorporating small discrete oxide particles into the coating. The particles are preferably yttrium oxide, and the coating is applied by simultaneously plasma spraying MCrAlY-type powder particles and oxide particles onto a substrate in a nonoxidizing atmosphere. Improvements in resistance to rumpling has also been observed in coatings applied according to this invention.

Abstract: A fabrication process polycrystalline silicon thin film transistors commences with the deposition of an ultra-thin nucleating-site forming layer onto the surface of an insulating substrate (e.g., 7059 glass). Next, an amorphous silicon film is deposited thereover and the combined films are annealed at temperatures that do not exceed 600.degree. C. By patterning the deposition of the nucleating site forming material on the glass substrate, the subsequently deposited amorphous film can be selectively crystallized only in areas in contact with the nucleating-site forming material.

Abstract: A composite member includes a structural member having a surface in a mirror-finished condition and a film layer of an amorphous material provided on the surface. The amorphous material is preferably at least one selected from amorphous SiC, amorphous SiN, amorphous SiGe and amorphous GeN. In producing the composite member, a surface of a structural member is polished into a mirror-finished condition which is a finish condition by the usual mirror-finishing. The film layer of the amorphous material is then provided on the surface in the mirror-finished condition by plasma CVD process.

Abstract: A method of depositing good quality thermal CVD silicon oxide layers over a PECVD TEOS/oxygen silicon oxide layer comprising forming an interstitial layer by ramping down the power in the last few seconds of the PECVD deposition.

Abstract: A multi-component, metal-containing, wear-resistant coating which is not homogeneous. The coating has a difference of a metallic element concentration of at least about 2 atom percent between the edges of the coating surface and the coating surface remote from the edge. Non-homogeneous coatings of the invention are surprisingly wear-resistant compared to homogeneous coatings.The invention also relates to a method of applying the coatings of the invention by a PVC-process or a plasma-CVD-process wherein the electrical potential difference between the substrate and the ionized coating material is selected to enhance the inhomogeneity of the coating.

Abstract: An amorphous thin film as a solid lubricant having a low coefficient of friction. It is composed of silicon (Si), oxygen (O), carbon (C), and hydrogen (H), and has a composition defined by the formula: Si.sub.x (O.sub.m, C.sub.n, H.sub.l-m-n).sub.1-x where, x=0.03-0.02, m=0.05-0.5, =0.1-0.9, and 0.6.ltoreq.m+n.ltoreq.0.95. This thin film exhibits extremely low friction stably from the beginning of sliding. It has superior wear resistance owing to its high hardness.

Abstract: An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.

Abstract: A method for manufacturing thin film, photovoltaic devices of the type having an intrinsic semiconductor layer disposed between two oppositely charged doped, semiconductor layers. A buffer layer of intrinsic semiconductor material is RF deposited at the junction between a microwave deposited, base intrinsic layer and a layer of doped material. The cell produced by the method of the present invention has enhanced performance characteristics over cells having microwave deposited intrinsic layers with no barrier layers.

Abstract: The invention relates to a plasma CVD method for the deposition of a thin film of amorphous silicon, or an amorphous silicon alloy, on a substrate by glow discharge decomposition of a raw material gas such as silane gas. The degradation of the photoconductivity of the obtained amorphous silicon film by irradiation with light is suppressed by mixing xenon gas with the raw material gas such that at the entrance to the reaction chamber the volume ratio of xenon gas to the raw material gas is not less than 1 and, preferably, not more than 30. A nearly comparable effect can be gained, and the material cost can be reduced, by mixing 1 part by volume of the raw material gas with 0.05 to 1 part of xenon gas and 5 to 30 parts of hydrogen gas.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing silicon and a halogen and an active species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said active species (A) separately from each other, then providing them with discharge energy and thereby allowing both the species to react chemically with each other to form a deposited film on the substrate.

Abstract: The present invention refers to coatings produced by means of the deposit of thin films formed by plasma-activated chemical vapor deposition of volatile fluoridated cyclic siloxanes having the structure [RR'SiO].sub.x, where R is an alkyl group with 1-6 carbon atoms, R' is a fluorinated alkyl group with 3-10 carbon atoms, the carbon in the alpha and beta positions with respect to the silicon atom is hydrogenated and x is 3 or 4. These particular coatings are useful because of their properties of protection and insulation.

Abstract: A method of forming high temperature resistant coatings having magnetic particles in a ceramic matrix by plasma spraying. Typically, the surface to be coated is cleaned by a combination of solvent cleaning and abrasion, such as by grit blasting. A mixture of ceramic particles and metal particles is provided and the mixture is plasma sprayed onto the surface using a sufficiently large proportion of metal particles to form a conductive first coating layer. A second layer is plasma sprayed with a mixture having a gradually decreasing metal particle content. A third layer is plasma sprayed using a mixture having a sufficiently low proportion of metal particles as to be dielectric. A pattern of small, spaced, conductive areas is then formed on the surface of the third layer. The resulting coating is durable, high temperature resistant and absorbs incident microwave energy.

Abstract: This invention relates to a process and a device for the deposition of thin layers on a substrate using a plasma-CVD technique. The substrate itself, which previously has been made conductive by the deposition of conductive layers, is used as an electrode to create the discharge. In particular, the technique can be applied to the deposition of organosilicon layers on glass plates of large dimensions. The invention also relates to a glass substrate covered by thin layers including at least one metal layer, in particular silver, on which the organosilicon layer is deposited according to the process.

Abstract: An amorphous photoelectric transducer of the type that converts light energy to electric energy using a p-n or p-i-n junction in an amorphous semiconductor having a p-type film on the light entrance side is disclosed. The p-type amorphous semiconductor film is formed with gaseous boron trifluoride (BF.sub.3) as a dopant, the film containing boron atoms at a concentration in the range of 1.times.10.sup.20 -2.times.10.sup.21 atoms/cm.sup.3, and the concentration of fluorine atoms in the film being no more than one half of the concentration of boron atoms. A process for producing an amorphous photo-electric transducer is also disclosed, wherein the p-type amorphous semiconductor film is formed by a pulse discharge-assisted chemical vapor deposition (CVD) technique which decomposes a feed gas including gaseous boron trifluoride (BF.sub.3) as a dopant.

Abstract: A plasma enhanced chemical vapor deposition process for producing a fluorinated silicon nitride layer on a substrate is disclosed. The process utilizes a mixture of silane, perfluorosilane and nitrogen to produce films of high conformality and stability. The silane and perfluorosilane in the mixture are in a ratio of 0.05 to 1 on a volume basis. The preferred silane is SiH.sub.4 and the preferred perfluorosilane is SiF.sub.4.

Abstract: In the PCVD method glass is deposited in layers on the inner wall of a glass tube by heating the tube to a temperature between 1100.degree. and 1300.degree. C., by passing a reactive gas mixture through the glass tube from a gas inlet side at a pressure between 1 and 30 hPa, by forming a plasma in the interior of the glass tube, and by reciprocating the plasma between two reversal points. After a quantity of glass corresponding to the desired fiber optical construction has been deposited, the tube is collapsed to form a solid preform from which optical fiber are draw. The range of nonconstant deposition geometry at the preform entrance, (i.e. on the gas inlet side), is reduced by interrupting the reciprocating movement of the plasma at the reversal point on the gas inlet side.

Abstract: In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.

Abstract: Ceramic or ceramic-like single, two, or multilayer coatings having aluminum nitride as one of the layers are provided, including methods for the preparation of such coatings which produce planarizing, passivating and hermetic barrier coatings on temperature sensitive substrates such as semiconductors and electronic devices. The aluminum nitride ceramic or ceramic-like coating is provided by applying a liquid alkylaluminum amide having the formula (R.sub.2 AlNH.sub.2).sub.3, where R is an alkyl group containing from 1 to 4 carbon atoms, neat or diluted in an organic solvent. The liquid coating is then dried, followed by heating the coating to a temperature of between about 400.degree. to about 100.degree. C. in the presence of ammonia to produce an aluminum nitride-containing ceramic coating.

Abstract: In forming a metal or metal silicide film by CVD, a fluorosilane is used as a reaction gas, or a fluoro-silane is added to a source gas. Examples of the metal halide used in the present invention include fluorides and chlorides of tungsten, molybdenum, titanium, tantalum and niobium. Among them, fluorides of tungsten and molybdenum are more desirable particularly from the viewpoint of the availability of the deposited metal or metal silicide. It is preferred that the source gases, i.e. silane series gas and metal halide, be diluted with a carrier gas such as nitrogen, hydrogen, helium or argon, and this is also true of the fluoro-silane. The total pressure is preferably 0.01 to 10 Torr. The reaction temperature is desirably 200.degree. to 800.degree. C., more desirably 300.degree. to 500.degree. C. Plasma CVD instead of thermal CVD may be employed for the purpose of lowering the reaction temperature.

Abstract: The present invention relates to the deposition of coatings containing silicon and oxygen from vaporized hydrogen silsesquioxane resin. The process comprises introducing the hydrogen silsesquioxane vapor into a deposition chamber containing the substrate to be coated and then inducing reaction of the vapor to form the coating.

Abstract: A metastable crystal layer is deposited by chemical plasma deposition on diamonds at subatmospheric pressure (10.sup.-3 Torr) at 850.degree.-1050.degree. C. The metastable layer enables the diamond to be metallurgically bonded to a suitable substrate.

Abstract: A thin film forming method includes the steps of supporting a semiconductor substrate having a trench or unevenness thereon in a reaction vessel, introducing a reactive gas into the reaction vessel, activating the reactive gas to form a deposit species, exhausting the interior of the reaction vessel, and cooling the semiconductor substrate below the liquid faction temperature of the deposit species to cause the deposit species to become a material deposited on the semiconductor substrate.