Abstract: A method for obtaining a floor covering comprising one or more resilient polymer substrates coated with a protective layer is described, wherein said layer contains one or more amorphous inorganic components and has a Vickers hardness of more than 1 GPa and a modulus of elasticity (Young's modulus) of less than 80 GPa, using a delayed cold plasma that induces a decomposition reaction of a volatile precursor compound so that a thin film of said amorphous inorganic component is formed on said substrate. A floor covering comprising one or more resilient polymer substrates obtained by the method of the invention is also described, wherein the substrate is coated with a protective layer containing one or more amorphous inorganic components and with a Vickers harness of more than 1 GPa and a modulus of elasticity (Young's modulus) of less than 80 GPa.

Abstract: A process for producing low-density, porous silica films in a vacuum environment is provided. The films are advantageous for use as low dielectric constant insulating materials in semiconductor devices. In a first step, an organic-group-containing silica precursor is deposited on a semiconductor substrate in a chemical vapor deposition reactor. In a second step, the organic groups are removed by heating in a furnace in an oxidizing environment or by exposure to an oxidizing plasma, thereby creating a low density silica film.

Abstract: Disclosed herein is a process for producing a color filter substrate for picture device constructed by selectively arranging light-shielding members and a plurality of coloring members different in spectral characteristics from each other on a transparent base, which comprises the steps of forming a water-repellent layer composed of a silane coupling agent on the base on which the light-shielding members are partially formed, exposing the surface of the base to oxygen plasma, and arranging a plurality of the coloring members different in spectral characteristics from each other on transparent regions of the base.

Abstract: The invention relates to a substrate (1) covered at least in part with a coating (6) comprising a number of layered structures (2) each such structure comprising a first diamond like nanocomposite composition layer (3) closest to the substrate, which composition comprises interpenetrating networks of a-C:H and a-Si:O, a second diamond like carbon composition layer (4) on top of said first layer, a transition layer (5) between said first and second layer comprising a mixture of said diamond like nonocomposite and said diamond like carbon compositions; and when the number of layered structures (2) is greater than one, then the coating (6) comprises an intermediate layer (7) comprising a mixture of said diamond like carbon and diamond like nanocomposite compositions sandwiched between each pair of consecutive layered structures (2). It also relates to a process for manufacturing such a covered substrate.

Abstract: A method is disclosed which forms a thin film by setting a substrate in place in a vacuum vessel provided with a gas inlet and introducing reaction gases through the gas inlet into the vacuum vessel and meanwhile applying a high-frequency electric power to the reaction gases thereby inducing generation of plasma and deposition of the thin film of the reaction product of the reaction gases on the substrate, which method is characterized in that prior to the introduction of the reaction gas, a discharge gas formed of a component gas of the reaction gases which by itself assumes the state of plasma and possesses substantially no ability to form the thin film or a plurality of reaction gases which in itself possesses substantially no ability to form the thin film is introduced into the vacuum vessel and the high-frequency electric power is meanwhile applied to the discharging gas thereby inducing the generation of plasma and effecting a pretreatment, and thereafter the reaction gases are introduced into the vacuu

Abstract: In a method for forming an interlayer dielectric (ILD) coating on microcircuit interconnect lines of a substrate, a SiON layer is formed by using plasma-enhanced chemical vapor deposition. The deposition using a plasma formed of nitrogen, nitrous oxide, and silane gases, with the gases being dispensed at regulated flow rates and being energized by a radio frequency power source. The plasma reacts to form SiON which is deposited on a semiconductor substrate. During processing the deposition temperature is reduced to under 400 degrees Celsius, specifically temperatures in the range of about 350 degrees Celsius to about 380 degrees, Celsius, resulting in a substantially reduced incidence of stress-induced voiding in the underlying interconnect lines. Additionally, during deposition, minor adjustments are made to deposition temperature and process pressure to control the optical characteristics of the SiON layer.

Abstract: A measuring device for measuring or examining physiological parameters on biocomponents includes an FET sensor 5 whose electrical protective layer 12 is roughened or has a structured coating 15. The structuring of the active sensor contact surface 12 is adapted to the outer contour and topography of the biocomponent in question, so that a better possibility is available for anchoring the biocomponents to the contact surface 24 forming the FET protective layer of the sensor 5.

Abstract: A method is used to form an intermetal dielectric layer. According to the invention, an unbiased-unclamped fluorinated silicate glass layer used as a protection layer is formed by high density plasma chemical vapor deposition on a biased-clamped fluorinated silicate glass layer formed by high density plasma chemical vapor deposition to prevent the biased-clamped fluorinated silicate glass layer from being exposed in a planarization process.

Abstract: The invention relates to an improved diamond-like nanocomposite composition comprising networks of a-C:H and a-Si:O wherein the H-concentration is between 40% and 80% of the C-concentration and having a coefficient of friction against steel which is smaller than 0.1 in air with a relative humidity up to 90%, or in water. The invention relates also to a process for depositing the composition on a substrate in a vacuum chamber. The composition comprises preferably 30 to 70 at % of C, 20 to 40 at % of H, 5 to 15 at % of Si and 5 to 15 at % of O and can be doped with transition metals.

Abstract: A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.

Abstract: A method is provided for depositing an amorphous silicon thin film on a substrate. The method is carried out in a reactor chamber and can be a LPCVD, PECVD or RTCVD process. The method comprises introducing a gas species into the reactor chamber for a time sufficient to dehydrate the substrate and to form a thin layer of silicon on the substrate. Following formation of the thin layer of silicon, a dopant gas is introduced into the reactor chamber to form the doped silicon thin film. The temperature and pressure within the chamber is set to minimize formation of surface irregularities or pits within the thin amorphous silicon layer.

Abstract: A gas inlet, which also serves as a counter electrode, is located inside of a vacuum chamber made of an electrically insulating material. A container is mounted on a mandrel mounted on the gas inlet. The chamber is evacuated to a subatmospheric pressure. A process gas is then introduced into the container through the gas inlet. The process gas is ionized by coupling RF power to a main electrode located adjacent an exterior surface of the chamber and to the gas inlet which deposits a plasma enhanced chemical vapor deposition (PECVD) thin film onto the interior surface of the container.

Abstract: A process for coating substrates with a silicon-containing protective layer by chemical vapor deposition with a silicon-containing compound of the structural formula (1): in which R1 is an alkyl group having 1 to 4 carbon atoms, and R2 is hydrogen or an alkyl group having 1 to 4 carbon atoms.

Abstract: In a method for forming an interlayer dielectric (ILD) coating on microcircuit interconnect lines of a substrate, a SiON layer is formed by using plasma-enhanced chemical vapor deposition. The deposition using a plasma formed of nitrogen, nitrous oxide, and silane gases, with the gases being dispensed at regulated flow rates and being energized by a radio frequency power source. The plasma reacts to form SiON which is deposited on a semiconductor substrate. During deposition, silane flow rates are regulating and reducing to less than sixty standard cubic centimeters per minute, thereby reducing the incidence of stress-induced voiding in the underlying interconnect lines. During deposition adjustments are made in deposition temperature and process pressure to control the characteristics of the SiON layer. The SiON layer is tested for acceptable optical properties and acceptable SiON layers are coated with a SiO2 layer to complete formation of the ILD.

Abstract: Described is a method for coating surfaces using a facility having sputtering electrodes, which has at least two electrodes that are spaced apart from one another and arranged inside a process chamber, and an inlet for a process gas. The two sputtering electrodes are acted upon by a bipolarly pulsed voltage in such a way that they are alternately operated as cathodes and as anodes. In addition, the frequency of the voltage is set between 1 kHz and 1 MHz. Furthermore, and that the operating parameters are selected in such a way that in operation, the electrodes are at least partially covered by a coating material.

Abstract: The present invention relates to post manufacturing operations for improving the working life of known bonding tools such as capillaries, wedges and single point TAB tools of the type used in the semiconductor industry to make fine wire or TAB finger interconnections. After the desired bonding tool is manufactured to predetermined specifications, dimensions and tolerances, it is placed in a sputtering chamber with hard target material with an ionizing gas. A controlled volume of sputtered hard material is generated at high temperature by plasma ion bombardment and deposited onto the working face of the bonding tool while the tool is held at a temperature that prevents distortion. A very thin amorphous hard layer is bonded onto the working face of the bonding tool which increases the working life of most tools by an order of magnitude and there is no requirement for additional processing.

Abstract: A process for depositing titanium suicide films via chemical vapor deposition takes place in a deposition chamber that has been evacuated to less than atmospheric pressure and utilizes, as reactants, the organometallic compound tertiary-butyltris-dimethylamido-titanium and a silicon-containing compound such as silane. The deposition temperature, which is dependent on the nitrogen source, is within a range of 400 to 800° C. The low end of the temperature range utilizes a plasma-enhanced deposition process, while the higher end of the temperature range relies on thermal decomposition to initiate the reaction. The films deposited using the process have a sheet resistance of about 2 to 10 ohms per square and contain less than 5 percent carbon impurities and less than 5 percent oxygen impurities by weight.

Abstract: In processing an object by irradiating it with laser light, a laser irradiation chamber is evacuated to a pressure value suitable for the intended laser light processing and the laser light processing is performed with the pressure in the chamber kept constant at the above value. Further, electrodes are provided in the laser irradiation chamber, and the inside of the chamber is cleaned by introducing an etching gas into the chamber during or immediately before the laser light irradiation and rendering the etching gas active.

Abstract: The invention describes composite coatings, in particular comprising carbon and another metallic element such as silicon or aluminium. These coatings have improved properties compared with pure tetrahedral amorphous carbon coatings, in that they have reduced stress levels and can be deposited at higher thicknesses, whilst retaining acceptable hardness and other useful mechanical properties. Also described are methods of making composite coatings, materials for making the coatings and substrates coated therewith. Specifically, a method of applying a coating to a substrate using a cathode arc source, comprises generating an arc between a cathode target and an anode of the source and depositing positive target ions on the substrate to form the coating, wherein the coating is a composite of at least first and second elements and the target comprises said at least first and second elements.

Abstract: A method for chemical vapor deposition of a film comprising tantalum onto a substrate includes introducing into a deposition chamber: (i) a substrate; (ii) a source precursor in the vapor state; and (iii) a reactant gas, and maintaining the temperature of the substrate within the chamber as from about 70.degree. C. to about 675.degree. C. for a period of time sufficient to deposit a film comprising tantalum on the substrate. The source precursor has a formula (I):Ta(F.sub.5-q-p)(X.sub.q-p)(R.sub.p) (I)wherein X is selected from the group consisting of bromine, iodine, chlorine, and combinations thereof; q is an integer from 0 to 4; p is an integer from 0 to 4; and R is selected from the group consisting of hydrogen and lower alkyl.

Abstract: For coating substrates (17,18,20,21,22) in a vacuum-coating chamber (2) the substrates are introduced by an air lock into the coating chamber (2) and moved along a transport path in front of the coating sources (50a,b,c,d) producing a coating cloud. To this end, the substrates (17,18,20,21,22) are led past the coating sources (50a,b,c,d) by means of holding devices (24) arranged movably on a transport belt (9) during at least two successive coating phases. During the one coating phase, the substrates (17,18,20,21,22) are oriented along one transport direction T.sub.3 oriented towards the coating sources (50a,b,c,d) such that essentially the substrate bottom of the cylindrical substrate is coated. During the subsequent second coating phase, the substrates are oriented in front of the coating sources (50a,b,c,d) in a direction T.sub.4 opposite the transport direction T.sub.3, wherein the substrates (17,18,20,21,22) are oriented such that essentially the cylindrical side surface is coated.

Abstract: A method of manufacturing a photoelectric transducer forms a functional film on a conductive substrate. The method comprises applying ultrasonic cleaning with a cleaning liquid containing water to the conductive substrate, then allowing the surface of the conductive substrate to contact purified water so as to import uniform oxidation and then forming the functional film thereon. The functional film is characterized in being formed with a metal layer as light-reflecting layer, a reflection enhancing layer, and a semiconductor photovoltaic device layer, prepared by a plasma CVD method, comprising a non-monocrystalline material containing silicon atoms as the matrix.

Abstract: Method for producing at least one organically-modified oxide, oxinitride or nitride layer by vacuum coating on a substrate through plasma-enhanced evaporation of evaporation material comprising nitride-forming evaporation material and one of oxide and suboxide evaporation material, wherein the at least one layer is deposited through plasma-enhanced, reactive high-rate evaporation of the evaporation material with use of gaseous monomers and a reactive gas including at least one of oxygen and nitrogen, and wherein the evaporation material, gaseous monomers, and reactive gas pass through a high-density plasma zone immediately in front of the substrate.

Abstract: In order to guarantee that individual elastomeric components used for medicinal or pharmaceutical purposes have improved inertness and static and sliding friction properties, a suitable layer is provided on the elastomeric components for this purpose by the method of the invention. This method includes providing an extended flat mat made of elastomeric material including connected protruding elastomeric components; coating at least one side of the mat including the connected elastomeric components by means of a PECVD or PICVD method to provide a silicon dioxide layer containing carbon, hydrogen and/or nitrogen on the at least one side of the mat; and punching the connected elastomeric components out of the mat to form individual unconnected elastomeric components, each at least partially coated with a portion of the layer.

Abstract: A silicon coating on an air bearing surface for magnetic thin film heads. A thick silicon layer is provided to replace metallic layers such as TiW as an overcoat for thin film heads. The silicon layer will provide a durable head-disk interface and act as a reflective surface for fly height measurement. The silicon layer can be planarized with the pole tips to avoid any magnetic spacing loss. The thickness of the silicon coating is preferably between 125 and 6500 Angstroms thick. The slider body may be fabricated from silicon such that the silicon coating is substantially identical to the silicon slider body, thereby preventing thermal mismatch therebetween. The silicon coating is preferably applied using a magnetron sputtering technique which provides a high rate of deposition of silicon to form a dense, low stress silicon layer.

Abstract: A method for forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field is described, characterized by that the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave of an electromagnetic wave having the same or different wavelength as that of the pulsed wave. The process enables deposition of a uniform film having an excellent adhesion to the substrate, at a reduced power consumption.

Abstract: A method for depositing adherent metal oxide-based protective coatings on glass, metal, and plastic substrates by arc plasma deposition.

Abstract: The present invention is directed to a process for forming compound films that contain at least three elements. The films are formed on a substrate by directing a gas containing reactant species onto the substrate. The compound film is formed from an interaction between two reactant species. The third element is incorporated into the film as it formed. The third element is different from the other two elements that form the compound film and is hydrogen, deuterium, or oxygen. The presence of the third element enhances the properties of the compound film. At least a portion of the substrate remains within the purview of the plasma discharge while the compound film is formed on the substrate.

Abstract: In a method of coating easily oxidisable materials by plasma powder build-up welding of additive materials in powder form using alternating current or direct current with superimposed alternating current to produce a plasma transferred arc for powder build-up welding in accordance with patent application No 196 26 941.5 a CuNi-alloy is used as an additive welding material with additions (in % by weight) of:______________________________________ Fe below about 10; Cr below about 5; B below about 4; Si below about 4; C with about 1.5; ______________________________________with a degree of mixing of more than 40% by volume.

Abstract: A method of preparing a poly-crystalline silicon (p-Si) film is provided with efficient dehydrogenation treatment of an amorphous silicon (a-Si) film deposited by a plasma enhanced chemical deposition (PECVD) process. A substrate is received in a process chamber of a PECVD system. A plasma discharge takes place to deposit an a-Si film on the substrate in an atmosphere in which reactive and carrier gases are supplied to the chamber. The substrate is still left in the chamber to carry out dehydrogenation of the a-Si film after the same is deposited on the substrate. While the carrier gas is supplied to the chamber during the leaving period of time, the pressure of the chamber is set higher than during the deposition step. After the dehydrogenation treatment, the substrate is taken out from the chamber. XeCl excimer laser beams are then irradiated to the a-Si film to change it into a p-Si film.

Abstract: A non-chrome process for the pretreatment of substrate surfaces to simultaneously clean them and improve their bonding strength for organic coatings such as adhesives, protective primers, sealants, paints, composites and similar materials conventionally bonded to such substrates, including non-chromated or chromated curable organic resin protective coatings applied directly to bare aluminum substrates. The invention involves the use of novel wipe solvent compositions containing a major volume of an environmentally-safe volatile organic solvent which has a low composite vapor pressure or is otherwise exempt from federal, state or local regulations, and a minor volume of a polyfunctional coupling agent, preferably of the silane type.

Abstract: A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the material being either amorphous or a mixture of amorphous and microcrystalline materials. The materials were prepared by CVD using differing amounts of hydrogen dilution to produce materials containing differing amounts of IRO material. Preferably the material includes at least 8 volume percent of IRO material.

Abstract: A method of forming a polycrystalline silicon thin layer, which comprises the steps of forming a silicon thin film on a surface of a heat resistant substrate by making use of polycrystalline silicon fine particles as a raw material, and heating the silicon thin film thereby to recrystallize the silicon thin film and hence to enlarge an average particle diameter of the polycrystalline silicon fine particles. The silicon thin film is formed by depositing the polycrystalline silicon fine particles directly on the surface of the substrate, and meets a relationship represented by the following formula (1)W.sub.A /(V.sub.S .multidot.d.sub.S).gtoreq.0.95 (1)wherein W.sub.A is the weight of the polycrystalline silicon fine particles which is actually deposited on the surface of the substrate, V.sub.S is a volume of the silicon thin film which is deposited on the surface of the substrate, and d.sub.S is a density of silicon (Si).

Abstract: A method for forming coatings of constant thickness on sheets of dielectric substrate (10), which may be curved, includes the step of adhesively applying foil (12) to one side of the dielectric substrate. An electrode (16) is set at a constant distance (D) from the side (10fs) of the substrate to be coated. If the substrate is curved, the electrode is preferably also curved. The region to be coated is evacuated, gaseous precursor materials are infused into the gap, and voltage is applied between the foil (12) and the electrode (16) sufficient to ionize the precursors to a plasma state, whereupon the deposition occurs. The foil may be applied as an adhesive-backed foil. The adhesive may be electrically conductive.

Abstract: A method of forming a microelectronic device includes the step of forming an impurity doped amorphous silicon layer on a microelectronic substrate using plasma-enhanced chemical vapor deposition. The impurity doped amorphous silicon layer is patterned so that portions of the microelectronic substrate are exposed adjacent the patterned amorphous silicon layer. A hemispherical grained silicon layer is then formed on the patterned amorphous silicon layer. Moreover, the step of forming the impurity doped amorphous silicon layer can be performed at a temperature of 400.degree. C. or less.

Abstract: In a process for forming a plasma CVD fluorine-doped SiO.sub.2 dielectric film, a feed gas to be supplied to a plasma CVD apparatus is composed to include not only SiH.sub.4 gas, O.sub.2 gas, CF.sub.4 gas and Ar gas but also CO.sub.2 gas, and the amount of carbon and the amount of fluorine included in the feed gas are controlled independently of each other, to form a plasma CVD silicon-based SiO.sub.2 dielectric film doped with fluorine in the concentration range of 4.0.times.10.sup.21 atoms/cc to 1.0.times.10.sup.22 atoms/cc, and carbon in the concentration range of 3.0.times.10.sup.19 atoms/cc to 1.0.times.10.sup.21 atoms/cc. Thus, a plasma CVD silicon-based SiO.sub.2 dielectric film having a low dielectric constant and a sufficient "resistance to moisture" is obtained.

Abstract: A method for precoating interior surfaces of a plasma CVD reactor after removal of built-up fluorinated silicon oxide residues by in-situ reactor cleaning. The deposition gas mixture includes F, Si, O and optional Ar. The interior surfaces can be precoated with fluorinated silicon oxide using a deposition gas mixture which includes 80 to 200 sccm SiF.sub.4 and 150 to 400 sccm O.sub.2 supplied to the reactor in a gas flow ratio of O.sub.2 :SiF.sub.4 of 1.4 to 3.2. The precoated film can be deposited at a high deposition rate to maintain high throughput in the reactor while providing a precoat film having low compressive stress and thus high film adhesion and low particle generation during subsequent substrate processing in the reactor.

Abstract: A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si--O--Si or Si--N--Si groups with organic side groups attached to the backbone.

Abstract: The invention encompasses methods of forming capacitors, methods of forming silicon nitride layers on silicon-comprising substrates, methods for densifying silicon nitride layers, methods for forming capacitors, and capacitors. In one aspect, the invention includes a method of densifying a silicon nitride layer comprising subjecting a silicon nitride layer to a nitrogen-comprising ambient atmosphere having at least about two atmospheres of pressure. In another aspect, the invention includes a method of forming a capacitor comprising: a) forming a first capacitor plate, the first capacitor plate comprising silicon and having a surface; b) forming a dielectric layer proximate the first capacitor plate, the dielectric layer comprising a silicon nitride layer and being formed by exposing the first capacitor plate surface to a nitrogen-comprising ambient atmosphere having at least about two atmospheres of pressure; and c) forming a second capacitor plate proximate the dielectric layer.

Abstract: An improved process for preparing nitrogen containing substrates selected from the group consisting of silicon oxynitride, silicon nitride and titanium nitride films and silicon dioxide cap films characterized by prevent resist contamination when used as dielectric anti-reflective coatings, using a high density plasma CVD system, comprising: providing a processing chamber holding a wafer in a vacuum sufficient to enable O.sub.2 to be used as an oxygen source without risk of explosion in a plasma generating region of the processing chamber; introducing a gaseous mixture selected from the group consisting of SiH.sub.4 /O.sub.2 /N.sub.2 or SiH.sub.4 /O.sub.2 /N.sub.2 /Ar into the processing chamber; and subjecting the processing chamber to a RF electrical signal of sufficient frequency to create a high density plasma in the plasma generating region of said processing chamber, whereby said wafer is processed by resulting high density plasma generated by said RF electrical signal.

Abstract: The present invention provides a forming method of a semiconductor thin film by a plasma CVD process comprising introducing a source gas and a high-frequency power into a film forming chamber to generate a plasma therein, thereby forming a semiconductor thin film on a substrate, wherein the frequency of the high-frequency power is within a range of 50 MHz to 2 GHz, the input power density thereof is within a range of 0.001 to 1.0 W/cm.sup.3, the discharge pressure is within a range of 0.005 to 0.5 Torr, the temperature of the substrate is within a range of 150 to 500.degree. C., and wherein a metal mesh is disposed so as to substantially confine the plasma between the substrate and a source gas introducing portion, thereby forming the semiconductor thin film.

Abstract: Methods and devices for producing plasmas of more uniform density and greater height than plasmas generated by previously known magnetron-type plasma-generating devices. The present invention utilizes electrodes containing multiple magnets positioned such that like magnetic poles of the magnets are all facing in substantially the same direction.

Abstract: Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for <0.18 .mu.m ICs, or when copper is used as conductor in future ICs.

Abstract: An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.

Abstract: A method for forming a multilayer film by introducing a material gas into a reduced-pressure reaction chamber provided with a pair of parallel planer electrodes and supplying a high-frequency electric power to the electrodes thereby generating a plasma state therein and depositing a film on a substrate disposed on one of the electrodes, comprising the steps of (a) introducing a first material gas into the reaction chamber and supplying the high-frequency electric power to the electrodes thereby generating the plasma state and depositing a first film on the substrate, (b) introducing stepwise a preparatory gas and adjusting stepwise a distance between the electrodes, a pressure inside the chamber and a RF power supplied to the electrodes while continuously retaining the plasma state subsequently to step (a), and (c) introducing a second material gas into the reaction chamber while continuously retaining the plasma state thereby and depositing a second film on the first film.

Abstract: A measuring device for measuring or examining physiological parameters on biocomponents includes an FET sensor 5 whose electrical protective layer 12 is roughened or has a structured coating 15. The structuring of the active sensor contact surface 12 is adapted to the outer contour and topography of the biocomponent in question, so that a better possibility is available for anchoring the biocomponents to the contact surface 24 forming the FET protective layer of the sensor 5.

Abstract: A method is described for strengthening or restoring strength to a brittle oxide substrate which includes the steps of coating the brittle oxide substrate with an aqueous solution containing a silane-based composition, and curing the coating to form a transparent layer on the brittle oxide substrate. Also disclosed are novel compositions used to coat brittle oxide substrates, and silane-coated brittle oxide containers.

Abstract: A process for applying a protective coating on the reflective layer of projector reflectors by means of plasma polymerization is provided, where a first protective layer which was applied on the reflective layer in a vacuum chamber by plasma polymerization of an organic silicon compound, is provided by means of a plasma in the same processing chamber, under uninterrupted vacuum conditions, with a second, hydrophilic layer substantially composed of a hydrocarbon skeleton and polar functional groups linked thereto, use is made of an apparatus which comprises a plurality of treatment stations (8, 9, 10) held by a fixed, circular cylindrical vacuum chamber wall (16) and a rotatable inner wall cylinder (17) which is enclosed by said vacuum chamber wall (16) and which holds four substrate chambers (12 through 15) and where the wall of the vacuum chamber (16) is provided with four openings (3 through 6) with which the substrate chambers (3 through 6) can be aligned and through which openings the treatment material c

Abstract: A process for producing an optical recording medium is disclosed which has a substrate and a recording film and an inorganic dielectric film, which are superposed on said substrate. The inorganic dielectric film is formed using a plasma processing device including a microwave guide means provided with an endless ring waveguide.

Abstract: A method for depositing a silicon oxynitride layer that has a higher etch-removal rate. The deposition starts by first passing gas from a pipeline A into the deposition chamber before switching the RF power source on. The further is the delay in switching the RF power source on, the higher will be the etch-removal rate of the silicon oxynitride layer formed by the deposition. Furthermore, the RF power source will remain on for a short period after the pump starts pumping gas away from the deposition chamber through pipeline A at the end of the deposition. The sooner is the switching off of the RB power source after the pump start to operate, the higher will be the etch-removal rate of the silicon oxynitride layer that result from the deposition.