Abstract: A method for improving the electrical conductivity of a substrate of metal, metal alloy or metal oxide comprising depositing a small or minor amount of metal or metals from Group VIIIA metals (Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt) or from Group IA metals (Cu, Ag, Au) on a substrate of metal, metal alloys and/or metal oxide from Group IVA metals (Ti, Zr, Hf), Group VA metals (V, Nb, Ta), Group VIA metals (Cr, Mo, W) and Al, Mn, Ni and Cu. The native oxide layer of the substrate is changed from electrically insulating to electrically conductive. The step of depositing is carried out by a low temperature arc vapor deposition process. The deposition may be performed on either treated or untreated substrate. The substrate with native oxide layer made electrically conductive is useable in the manufacture of electrodes for devices such as capacitors and batteries.

Abstract: A surface treating is performed by an electric discharge. The electric discharge is generated by applying a voltage between an electrode and a metal workpiece. The electrode is a solid or green compact electrode or the like which is made of a reforming material. The workpiece may be an end mill or the like. Then, a coating layer is formed on a surface of the metal workpiece. Thereafter, a nitriding treatment is performed on the coating layer in a nitriding vessel or the like. Thus, a hard coating layer of better quality is formed on the surface of the workpiece whether a material of the workpiece is steel or hard metal.

Abstract: A tool has a tool body and a wear resistant layer system, which layer system has at least one layer of MeX. Me comprises titanium and aluminum and X is nitrogen or carbon. The tool has a tool body of high speed steel (HSS) or of cemented carbide, but it is not a solid carbide end mill and not a solid carbide ball nose mill. In the MeX layer, the quotient Q.sub.I as defined by the ratio of the diffraction intensity I(200) to I(111) assigned respectively to the (200) and (111) plains in the X ray diffraction of the material using .theta.-2.theta. method is selected to be .gtoreq.1. Further, the I(200) is at least twenty times larger than the intensity average noise value, both measured with a well-defined equipment and setting thereof.

Abstract: There is provided a diamond crystal in which the (111) oriented plane is of the diamond crystal synthesized on a substrate by a chemical vapor deposition method parallel to a substrate surface, and the area of the (111) oriented plane parallel to the substrate surface is 1/24or less an area of the crystal on the substrate. A source gas is activated on a substrate consisting of a material which is not reactive with carbon. The source gas contains at least carbon and hydrogen in such a manner that the ratio of the number of carbon atoms to the total number of molecules of the source gas is 0.5% or less. Subsequently, a diamond crystal in which the (111) orientation plane is parallel to the substrate surface, and the area of the (111) orientation plane parallel to the substrate surface is precipitated on the substrate. A copper plate is preferably contains used as the substrate.

Abstract: In a magnetic film forming method, a plurality of chips formed of Fe.sub.3 O.sub.4 and a plurality of chips formed of HfO.sub.2 are disposed on a target formed of Fe. The composition ratio of a Fe--Hf--O film can be set within a proper range by adjusting the numbers of the up said two kind of chips.

Abstract: The invention is concerned with a reduction of the surface roughness of titanium-aluminum-nitride hard material layers produced by the combined cathodic arc discharge vaporization process and the imbalanced magnetron coating process (ABS method) or by the pure cathodic arc discharge vaporization process.

Abstract: A filtered cathodic vacuum arc is used as a source of metal to generate a highly directional beam of metal ions having substantially larger velocity parallel to the axis of the beam (perpendicular to the surface of the target) than perpendicular to the axis of the beam. This ion beam, with energies ranging up to 80 eV, is used to deposit metal into the bottom of high aspect (typically greater than 3 to 1) openings, for example, to deposit titanium in the bottom of deep contact holes in semiconductor devices or to deposit molybdenum to form tips for emitters for a field emission display. Gases can be introduced into the vacuum deposition chamber during deposition to change the nature of the deposit. The substrate or target bias can be adjusted to control the deposition rate.

Abstract: The invention is a method for the production of axially symmetric, graded and ungraded thickness thin film and multilayer coatings that avoids the use of apertures or masks to tailor the deposition profile. A motional averaging scheme permits the deposition of uniform thickness coatings independent of the substrate radius. Coating uniformity results from an exact cancellation of substrate radius dependent terms, which occurs when the substrate moves at constant velocity. If the substrate is allowed to accelerate over the source, arbitrary coating profiles can be generated through appropriate selection and control of the substrate center of mass equation of motion. The radial symmetry of the coating profile is an artifact produced by orbiting the substrate about its center of mass; other distributions are obtained by selecting another rotation axis.

Abstract: The present invention relates to a method of producing catalytic materials which comprises passing an aerosol comprising a mixture of metal powder and support through a plasma torch.

Abstract: A method for manufacturing an optical information recording medium which is usually stable and is not affected by the environmental condition and an apparatus used therefor. The method comprises the steps of placing a substrate and a member comprising a material for a film opposing each other in a vacuum film forming chamber; forming a plasma by glow discharging a gas between the substrate and the member comprising a material for a film; and supplying a gas mixture containing water to the film forming chamber before forming films or during forming films of the protective layer by the film forming method in which the material for a film freed from the member comprising a material for a film by using the plasma as an energy source are attached or deposited on the substrate.

Abstract: An electric arc ion plating apparatus to coat a metal material on an object includes: (a) an vacuum chamber; (b) an electric arc bombardment chamber in the vacuum chamber, comprising an anode, a cathode target, and an arc triggering electrode to generate metal particles when a voltage is applied on the anode and the cathode, and on the arc triggering electrode; and (c) a magnetic coil having a longitudinal axis. The magnetic coil emanates from the electric arc bombardment chamber and encloses at least a part of the electric bombardment chamber. The magnetic coil contains a constant-diameter section enclosing and immediately emanating from the electric arc bombardment chamber to guide the metal particles away from the cathode and toward the object, and a varying-diameter section away from the electric arc bombardment chamber to provide optimum distribution of the metal particles before they reach the object surface.

Abstract: A modified porous non-conductor is provided wherein its outer and inner, surfaces have been treated by placing the porous non-conductor between a pair of electrodes which are located opposite to each other and carry a dielectric layer on a surface facing the other electrode, respectively, so that the porous non-conductor is brought into contact with both dielectric layers without coming into contact with the electrodes; and then, applying an alternating current voltage having a frequency of about 0.1 Khz to about 100 Khz between the electrodes to thereby induce an electric discharge in voids contained in the porous non-conductor and sandwiched between a pair of the electrodes.

Abstract: A blank mold sooting process in which a lubricating or detaching layer is formed on the internal walls of the blank mold, by igniting an acetylene flow with piezoelectric electrodes, a voltaic arc generator, or an electrical resistance. The process is performed utilizing, for example, a blow mold and an invert, and the invert can be utilized to transfer a collar from the blank mold to the blow mold.

Abstract: A product substrate coated with a uniform deposit of silicon oxide created by subjecting the substrate to an electrical discharge with a dielectric barrier in the presence of a controlled atmosphere containing a silane and an oxidizing gas, the atmosphere being at a pressure higher than 10,000 Pa, and wherein the atmosphere is maintained in the immediate vicinity of an electrode in the region where the electrical discharge is produced and further wherein any entrainment of oxygen other than that forming part of the atmosphere in the region is prevented.

Abstract: The present invention is an apparatus and method for the fabrication of high quality silicon films by deposition of a silicon vapor onto a substrate. The silicon film fabrication apparatus includes a chamber, a crucible having an anode for melting a silicon metal, an anode for generating a DC arc discharge plasma, a substrate holder facing the crucible, and a heater for heating a substrate arranged in the substrate holder. The apparatus also includes a variable DC power supply, a cathode element including an electrode plate for generating the DC arc discharge plasma, a gas intake pipe penetrating through the electrode plate into the chamber, and an exhaust pipe having a valve facing the gas intake pipe. The silicon film is fabricated by disposing a substrate in a chamber, introducing hydrogen gas into the chamber, generating the DC arc discharge plasma, evaporating the silicon metal in the chamber, and depositing the silicon vapor on the substrate after the vapor passes through the DC arc discharge plasma.

Abstract: A method of encapsulating a material in a carbon nanotube comprising generating a vapor of the material to be encapsulated, generating a hydrogen arc discharge that discharges encapsulating products, and contacting the vapor of the material and the products discharged from the hydrogen arc discharge proximate a surface to encapsulate the material in a carbon nanotube. A carbon nanotube encapsulating a metallic material (e.g. copper), a semi-conductor material (e.g. germanium) and other materials can be produced.

Abstract: A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.

Abstract: A filtered cathodic arc deposition method and apparatus for the production of highly dense, wear resistant coatings which are free from macro particles. The filtered cathodic arc deposition apparatus includes a cross shaped vacuum chamber which houses a cathode target having an evaporable surface comprised of the coating material, means for generating a stream of plasma, means for generating a transverse magnetic field, and a macro particle deflector. The transverse magnetic field bends the generated stream of plasma in the direction of a substrate. Macro particles are effectively filtered from the stream of plasma by traveling, unaffected by the transverse magnetic field, along the initial path of the plasma stream to a macro particle deflector. The macro particle deflector has a preformed surface which deflects macro particles away from the substrate.

Abstract: A process for forming a thin metal coating on a substrate wherein a gas stream heated by an electrical current impinges on a metallic target in a vacuum chamber to form a molten pool of the metal and then vaporize a portion of the pool, with the source of the heated gas stream being on one side of the target and the substrate being on the other side of the target such that most of the metallic vapor from the target is directed at the substrate.

Abstract: A method for applying a rough slip resistant non-skid surface to a substrate in the field at the cite of use, comprising applying at least one base coat of metal to a surface of the substrate; wetting the surface of the substrate with a surfactant; spreading grit onto the wetted surface of the substrate; applying at least one bond coat of metal over the grit and the substrate, locking the grit in place; and, applying at least one finish coat of metal over the grit and the substrate.

Abstract: A surface treating method uses an electric discharge machining to form a coating layer having strong adhesion and excellent characteristics on a metal surface such as a hard metal. A discharge electrode is formed by powders containing metal hydride. Electric discharge is generated in a working fluid containing carbon between the discharge electrode and a workpiece. Thus, a coating layer of the metal hydride is formed on a surface of the workpiece.

Abstract: The invention provides systems and methods for the deposition of an improved diamond-like carbon material, particularly for the production of magnetic recording media. The diamond-like carbon material of the present invention is highly tetrahedral, that is, it features a large number of the sp.sup.3 carbon--carbon bonds which are found within a diamond crystal lattice. The material is also amorphous, providing a combination of short-range order with long-range disorder, and can be deposited as films which are ultrasmooth and continuous at thicknesses substantially lower than known amorphous carbon coating materials. The carbon protective coatings of the present invention will often be hydrogenated. In a preferred method for depositing of these materials, capacitive coupling forms a highly uniform, selectively energized stream of ions from a dense, inductively ionized plasma.

Abstract: A rectangular vacuum-arc plasma source and associated apparatus for generating and directing a stream of plasma containing an ionized vapor of a cathode material toward a substrate by vacuum arc evaporation of a rectangular planar cathode mounted in a rectangular plasma duct. The rectangular duct conducts the plasma from the cathode to the substrate region, while intercepting the molten droplets of cathode material also generated by the arc. Magnets control the arc motion on the cathode surface while simultaneously generating the magnetic field which guides the plasma through the duct. Benefits of a filtered cathodic arc (fully ionized vapor stream, elimination of splattered droplets) are combined with the benefits of a rectangular source (uniform evaporation from the source and uniform deposition on the substrate using linear motion). The rectangular source may be extended indefinitely in length, thus allowing coating or ion implantation on large or long substrates.

Abstract: A method and apparatus for reactive plasma surfacing includes at least two electrodes between which reactive gases are passed. The reactive gases are ionized by the arc between the electrodes, creating a plasma of heated, ionized, reactive gases. The plasma is then applied to a surface to be treated, causing a chemical reaction between the plasma and the surface and resulting in a new diffusional substrate surface on the treated object. The process occurs at substantially atmospheric pressure, and may include an inert gas to shield the process from the surrounding environment.

Abstract: A low temperature process is disclosed for forming metal suboxides on substrates by cathodic arc deposition by either controlling the pressure of the oxygen present in the deposition chamber, or by controlling the density of the metal flux, or by a combination of such adjustments, to thereby control the ratio of oxide to metal in the deposited metal suboxide coating. The density of the metal flux may, in turn, be adjusted by controlling the discharge current of the arc, by adjusting the pulse length (duration of on cycle) of the arc, and by adjusting the frequency of the arc, or any combination of these parameters. In a preferred embodiment, a low temperature process is disclosed for forming an electrically conductive metal suboxide, such as, for example, an electrically conductive suboxide of titanium, on an electrode surface, such as the surface of a nickel oxide electrode, by such cathodic arc deposition and control of the deposition parameters.

Abstract: A process for treating outer-inner surfaces of a porous non-conductor, comprising steps of:placing said porous non-conductor between a pair of electrodes which are located opposite to each other and carry a dielectric layer on a surface facing the other electrode, respectively, so that said porous non-conductor is brought into contact with both dielectric layers without coming into contact with said electrodes; and then,applying an alternating current voltage having a frequency of about 0.1 KHz to about 100 KHz between said electrodes to thereby induce an electric discharge in voids contained in said porous non-conductor and sandwiched between a pair of said electrodes is disclosed.

Abstract: A metal or alloy nanoparticle is provided which exhibits hysteresis at room temperature having a carbon coating. The nanoparticle has a diameter in the range of approximately 0.5 to 50 nm, and may be crystalline or amorphous. The metal, alloy, or metal carbide nanoparticle is formed by preparing graphite rods which are packed with the magnetic metal or alloy or an oxide of the metal or alloy. The packed graphite rods are subjected to a carbon arc discharge to produce soot containing metal, alloy, or metal carbide nanoparticles and non-magnetic species. The soot is subsequently subjected to a magnetic field gradient to separate the metal, alloy, or metal carbide nanoparticles from the non-magnetic species.

Abstract: Apparatus and method are provided for forming coatings of transition metal compounds on solid bodies using cathodic arcs and a reactive gas in a vacuum chamber. The metal composition of the coatings is varied by moving the articles to be coated through the vacuum chamber having cathodes at selected locations, the articles being supported on movable supports.

Abstract: A glass making apparatus adapted to deposit a lubricating/detaching layer of carbon black obtained from acetylene cracking on the internal walls of a blank mold (1, 18). The glass making apparatus includes a blank mold (1, 18) having an open top and an open bottom (10); a collar (6) sized, shaped, and positioned to selectively plug the open bottom (10) of the blank mold (1, 18) during a glass forming process and to disengage from the open bottom (10) of the blank mold (1, 18) during a blank mold sooting process; a ring (7) disposed in the collar (6); a plunger (8, 14) sized, shaped, and positioned to selectively move up into the collar (6) and down out of the collar (6); and a sleeve (9) surrounding the plunger (8, 14).

Abstract: A method for forming a desired pattern of a material of conductive or non-conductive type on a variety of substrates. It is based on the use of a pen which essentially consists of a refractory tip wetted with the material in the molten state. The pen preferably consists of a pointed tungsten tip attached to the top of a V-shaped tungsten heater, forming a heater assembly. The tip and the heater top portion are roughened at the vicinity of the welding point. In turn, the ends of the V-shaped heater are welded to the pins of a 3-lead TO-5 package base. The pen is incorporated in an apparatus adapted to the direct writing technique. To that end, the pen is attached to a supporting device capable of movements in the X, Y and Z directions, while the substrate is placed on an X-Y stage for adequate X, Y and Z relative movements therebetween. The two pins of the pen are connected to a power supply to resistively heat the heater.

Abstract: A process for reducing particle defects in an arc vapor deposition coating on a substrate comprises the steps of providing a metallic wire mesh, providing an arc source adapted to impart a positive charge on coating macroparticles produced during arc vapor deposition, positioning the wire mesh in between the arc source and the substrate, applying a negative bias voltage to the wire mesh and entrapping positively charged macroparticles on the negatively charged wire mesh during coating deposition.

Abstract: A method and apparatus for generation of a discharge in own vapors of a radio frequency electrode for sustained self-sputtering and evaporation comprising the steps of: (a) generation of a radio frequency discharge by a radio frequency electrode of a hollow geometry in an auxiliary gas introduced into the discharge area at a pressure necessary for an initiation of a hollow cathode discharge inside the hollow electrode causing sputtering and/or evaporation of the electrode surface; (b) increasing the radio frequency power to said hollow electrode to enhance density of vapors containing particles released from the electrode by the sputtering and/or evaporation in the radio frequency generated hollow cathode discharge up to a density at which a self-sustained discharge remains after the inflow of said auxiliary gas is closed and the pumping of gas is adjusted to a value necessary for the maintenance of the discharge. The hollow radio frequency electrode may serve as an inlet of said auxiliary gas.

Abstract: An abrasive article having a sheet-like substrate having at least one major surface; an abrasive coating adhered to the at least one major surface of the substrate, wherein the abrasive coating comprises a plurality of abrasive particles and an organic binder medium; and, a hard carbon coating layer comprising a diamond-like carbon film. The hard carbon coating layer in the coated abrasive article can be provided as a top coat or, alternatively, as located between the abrasive coating and a covering layer based on an organic binder layer. The invention also pertains to a method of making such an abrasive article.

Abstract: An object of the present invention is to provide a method for manufacturing a magnetic hard disk wherein a magnetic material layer adhered on a surface of a substrate of the magnetic hard disk has a flat surface.A method for manufacturing a magnetic hard disk comprising steps of: structurally transforming a surface of an amorphous Ni--P alloy film layer formed a substrate (10) of the magnetic hard disk; and adhering a magnetic material layer on the surface of a substrate (10), wherein the step of structurally transforming the a-Ni--P alloy film layer is a step of heating only a desired portion of the surface of the substrate (10) by an electric discharge to generate Ni and crystallized compounds of Ni and P only at the desired portion (T) of the surface thereof.

Abstract: An apparatus and process for forming surface layers on electrodes by electron discharge machining. A machining gap, between an electrode and a workpiece is filled with a dielectric mixture containing metallic or submetallic powder. The apparatus uses a swinging mechanism to move the electrode during processing. The apparatus uses a high-voltage superposition circuit to superpose a voltage of 100-400 V across the gap. The apparatus uses a current limiting resistor of 100-300 .OMEGA. to ensure that the main circuit supplies a low voltage of approximately 100 V to the machining gap. In a second embodiment, the apparatus prevents electrode cracking by dispersing the discharges throughout, and widening, the machining gap.

Abstract: An apparatus and process for forming surface layers on electrodes by electric discharge machining. A machining gap, between an electrode and a workpiece is filled with a dielectric mixture containing metallic or submetallic powder. The apparatus uses a swinging mechanism to move the electrode during processing. The apparatus uses a high-voltage superposition circuit to superpose a voltage of 100-400 V across the gap. The apparatus uses a current limiting resistor of 100-300.OMEGA. to ensure that the main circuit supplies a low voltage of approximately 100 V to the machining gap. In a second embodiment, the apparatus prevents electrode cracking by dispersing the discharges throughout, and widening, the machining gap.

Abstract: A method of forming a diamond-like carbon film on a substrate arranged in a vacuum chamber includes the steps of generating an arc-discharge plasma current in the vacuum chamber, supplying a reaction gas containing carbon atoms, such as CH.sub.4 gas for example, into the arc-discharge plasma current, applying a high-frequency voltage to the substrate so that a self-bias developed in the substrate is not more than -200 V, and forming a diamond-like carbon film from the reaction gas on the substrate that is supplied with the high-frequency voltage.

Abstract: The invention relates to electronics and optical industry technology. Deposition of diamond and diamond-like films is performed in a plasma flux at atmospheric pressure at a temperature T=10.sup.4 .degree. K. A mixture of hydrocarbons and hydrogen is fed to a plasma flux formed by the confluence of a plurality of jets. As a result of the processes occurring in the plasma flux, there is deposited on the substrate a diamond or diamond-like film having a high degree of adhesion to the substrate, at a rate of 1 micron/sec, which substantially exceeds the rate of deposition of similar films by known methods.

Abstract: A method is described for grading the electrical field at the surface of an electrode by depositing a semiconductive coating thereon. An electrode substrate is powered at a preselected temperature and power. A mixture of gases is then passed through an electrical discharge to ionize at least a portion thereof to form the semiconductive coating on the surface of the electrode. Also described is the plasma enhanced chemical vapor deposition of a diamondlike carbon (DLC) film onto a substrate. A substrate is maintained at a preselected DLC forming temperature and is negatively biased at a first preselected voltage. A first gaseous mixture of hydrocarbons and argon is then passed through an electrical discharge to at least partially ionize the hydrocarbons to form DLC film on the substrate. The substrate is then negatively biased at a second preselected voltage lower than the first preselected voltage.

Abstract: The invention relates to a process for coating or hardfacing recharging a part by means of a plasma transferred arc.According to the process, on the part (1) to be coated or hardface is deposited at least one weld bead (7a, 7b, 7c) of said material solely by means of the plasma transferred arc (5), by moving the plasma relative to the part at a speed of 1.5 to 50 m/min and using a power of the plasma such that the surface of the part is melted over a thickness at the most equal to 0.5 mm and so that the enlargement of the grains in the melted area does not exceed 10%, without cooling the part during recharging.

Abstract: Using an arc ion plating apparatus, a metal not capable of forming a carbide or nitride, such as cobalt, nickel or molybdenum is set as a first target, a metal capable of forming a carbide or nitride, such as silicon, titanium, vanadium, chromium, iron, zirconium, niobium or tungsten is set as a second target and nitrogen, acetylene or methane is fed as a process gas to form a film on a piston ring body which is an article to be coated, thereby providing a piston ring comprising a hard film formed on at least its sliding outer face of the piston ring body, said hard film comprising a mixed structure formed of the metal not capable of forming a carbide or nitride and a carbide or nitride of the metal capable of forming a carbide or nitride. In this piston ring, the hard film has so good adhesion to the body material or film toughness that no cracking or film separation tend to occur even when the film is formed in a large thickness.

Abstract: The invention relates to a method for depositing a diamond coating on a workpiece, for instance a drawing die or a tool punch, whereby a reactive plasma supported coating method is used. According to the invention the generation of the plasma is made by a direct current discharge, whereby additionally a flow of charged particles is fed into the discharge gap; according to the invention the workpiece to be coated is positioned in the discharge gap. Due to the inventive design a relatively long discharge gap can be used, such that also large surface areas can be coated; the coating is made at a location of the highest homogeneity and density of the plasma. By means of the invention a method is provided which can be controlled regarding financial expenses and in a reliable manner and which is suitable for large surface area coating.

Abstract: A process and apparatus for plasma-activated electron beam vaporization is rovided. The vaporizing material from at least two vaporizer crucibles is vaporized with electron beams. An electric voltage is applied to the vaporizer crucibles in such a way that the vapor-emitting areas serve as electrodes of an electric discharge. The vaporizing material acts as a cathode or anode. The process and apparatus are preferably intended for the reactive coating of large surfaces and for the reactive coating of components, tools and strip steel.

Abstract: A method and apparatus for making carbon-encapsulated ultrafine metal particles, in which metal powder intended for encapsulation is injected at a rate up to 25 grams per minutes into a plasma arc so that the metal powder is vaporized. The vaporized metal powder is then mixed with an active gas flow, which consists of hydrocarbons, filled in the surrounding area of the plasma arc, and thereby the vaporized metal powder and the active gas interact continuously producing carbon encapsulated ultrafine metal particles that are remarkably predictable in particle size, distribution of sizes and atomic composition.

Abstract: Grinding tools are provided having a composite working surface with a metal bonding material coated with a modulated composition of transition metal compounds. Titanium nitride and zirconium nitride are suitable compounds. A manufacturing method for such grinding tools is also provided, employing cathodic arc deposition with transition metal compounds being formed from arcs of transition metal cathodes and a reactive gas.

Abstract: An improved vacuum arc coating apparatus is provided, having a tube defining reaction zone with a plasma channel defined within a series of aligned annular substrate holders, or between an outer wall of an axial chain of substrate holder blocks and the inner wall of the tube. The substrate holders thus act as a liner, confining an arc within the plasma channel. Carrier and plasma-creating gases and the reaction species are introduced into the tube, and the deposition process may be carried out at a pressure between 100 Torr and 1000 Torr. Magnetic coils may be used to create a longitudinal magnetic field which focuses the plasma column created by the arc, and to create a transverse magnetic field which is used to bias the plasma column toward the substrates. Substrates can thus be placed anywhere within the reaction zone, and the transverse magnetic field can be used to direct the plasma column toward the substrate, or the tube itself can be rotated to pass the substrate through the plasma column.

Abstract: Cathodic/anodic vacuum arc sources with plasma ion implantation deposition system for depositing high quality thin film coatings of complex compounds on a workpiece. Both cathodic and anodic vacuum arc deposition sources, CAVAD, are used to create a plasma vapor from solid materials composing the cathode and/or anode in the cathodic and/or anodic arc respectively. Gases, e.g., hydrogen or nitrogen can be in the deposited films by creating a background plasma of the desired gas using either RF energy, thermionic emission, or consequential ionization of the gas passing through the arc or around the substrate. Application of highly negative pulses to the substrate to extract the ions and provide them with the appropriate energy to interact with the other species in the thin film formation on the substrate to form the desired films. The substrate is bombarded with the ionized particles to form carbon nitrides with variable [N]/[C] ratios, referred to as CN.sub.x.

Abstract: Capacitors with high dielectric strength and low dissipation factor over a wide range of frequencies comprise two or more conductive layers separated by at least one dielectric layer. The dielectric layer is of silicon-doped amorphous hydrogenated carbon, with suitable dopants including silane (which is preferred), tetraalkoxysilanes and polyorganosiloxanes.

Abstract: A process for gas phase synthesis of diamond using a DC plasma jet where a plasma jet generated by DC arc discharge using a DC plasma torch is made to strike a substrate and grow diamond on the substrate, wherein use is made of a plurality of plasma torch anodes, these are arranged coaxially in a telescoped structure, a magnetic field is applied to these in accordance with need to cause the arc to rotate or the electrode is rotated so as to perform gas phase synthesis of diamond.

Abstract: A process for producing diamond includes a step of bringing a columnar cathode and a tubular pilot anode provided concentrically around the cathode, into proximity to a plasma jetting port of a front end portion of a tubular main anode provided concentrically around the pilot anode. According to the process, a voltage is applied across the cathode and the pilot anode to convert a pilot gas to the form of a plasma. Then, the cathode is moved away from the pilot anode along a common axis. The process also includes the step of holding the discharge voltage between the cathode and the pilot anode at a first preselected voltage, and then applying voltage across the cathode and the main anode to convert a main gas to the form of a plasma. Subsequently, at least the pilot anode is moved away from the main anode along the common axis while maintaining the discharge voltage between the cathode and the pilot anode at the first preselected voltage.