Abstract: A process for producing an electrode plate for an electrolytic condenser. According to the process, a fixed or movable substrate is introduced into a chamber, and an oxidizing atmosphere and vaporized aluminum are also introduced into the chamber, under a pressure of 0.8 to 2.3 Pa in a deposit zone. A coating of grain agglomerates comprising a porous matrix of aluminum oxide containing metallic aluminum crystallites arranged randomly within the grains is deposited onto at least one surface of the substrate by condensation from the atmosphere at a rate between 0.03 and 0.2 micrometers per second. The coated substrate is then removed from the chamber and subjected to a chemical or electrochemical stabilization treatment.
Type:
Grant
Filed:
January 20, 1995
Date of Patent:
January 9, 1996
Assignee:
Satma
Inventors:
Francis Allegret, Mohamed Benmalek, Emmanuel Gariel
Abstract: An evaporation method is described for the deposition of various materials that comprise a plurality of elements, such as metal alloys, ceramics and certain inorganic-metallic compounds. The method involves the evaporation of a material comprising a plurality of elements through a molten pool of another material. The material which is to be evaporated is placed in a suitable evaporation means under the material which is to be used to form the molten pool. By applying heat sufficient to melt both materials, the material to be evaporated is transported through the molten pool of the other material. The materials are selected so that the material to be evaporated is preferentially evaporated with respect to the other material. This method produces a vapor stream and condensates that have compositions which closely resemble the compositions of the material from which they were deposited. Further, the condensate may be collected using the method of this invention at high rates on the order of 0.
Abstract: A method for the production of polycrystalline diamond coatings, in which carbon from a carbon-containing gas mixture is precipitated onto a substrate heated to a preselected temperature, wherein the substrate is disposed inside a coolable detonation-combustion chamber of a high-velocity burner system or in a detonation gun and an atmosphere preventing oxidation of the surface of the substrate is created and this inert gas atmosphere is then replaced by a carbon-rich detonation mixture atmosphere. The method can also be implemented, if desired, with use of a high-velocity burner system without a combustion chamber and without a detonation gun.
Abstract: A coreless refractory fiber is made by introducing a filament (16) of a starting material into a chemical vapor deposition (CVD) enclosure (10) and then heating the end (21) of the filament by means of a contactless heating source. The source comprises a conducting coil connected to an AC source in the frequency range HF to UHF and with a linear or strip conducting element (110) connected to it such that the ends of the element is adjacent to the end (21) of the filament. The filament (16) is then withdrawn such that refractory material is continuously built up on its end from the chemical vapors in the enclosure to form a coreless retractory fiber. Whiskers of a coreless refractory material may be made by introducing fine particles of a catalyst material to form droplets and then feeding CVD gases to the droplets (30) to thereby promote crystal growth by precipitation from the supersaturated liquid.
Type:
Grant
Filed:
August 19, 1993
Date of Patent:
July 11, 1995
Assignee:
The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britian and Northern Ireland
Abstract: This invention relates to a composite vapor deposition film composed of a plurality of elements and a method for manufacturing the same. A composite vapor deposition film is produced by having a composite of multi-component particles turned into a vapor to instantaneously evaporate the multi-component particles to an energy active vapor phase state. The composite vapor phase substance is solidified on a deposition substrate to form the vapor deposition film.
Abstract: In a plasma-enhanced chemical vapor deposition method, in order to achieve greater space for positioning workpieces to be coated simultaneously and essentially identically on all sides, the workpiece are positioned at a distance from one electrode on the basis of a coating rate gradient.
Abstract: Phosphor-doped silicon films are simultaneously formed on semiconductor wafers, respectively. The semiconductor wafers are contained in a reaction tube whose interior temperature is controlled to 500.degree. C. Si.sub.2 H.sub.6 and PH.sub.3 are introduced into the reaction tube. PH.sub.3 is preheated to 400.degree. C. in a gas activating unit before being introduced into the reaction tube. By virtue of the preheating, the thermal decomposition of PH.sub.3 carried out in the reaction tube is accelerated.
Abstract: A method for making optical recording media in which the optically readable information is embossed therein by means of an information master recording which is directly usable as a stamper.
Type:
Grant
Filed:
December 18, 1990
Date of Patent:
February 23, 1993
Assignee:
E. I. Du Pont de Nemours and Company
Inventors:
Martinus J. M. de Graaf, Michael G. Fickes, George H. Johnson, Howard E. Simmons, III
Abstract: A method for depositing a thick, adherent and coherent polycrystalline diamond (PCD) film onto a metallic substrate using a deposition rate of no greater than 0.4 .mu.m per hour. The resulting PCD Film has a smooth surface finish, enhanced crystal orientation in comparision to industrial grade diamond powder particularly in the (220) and (400) directions, and excellent electrical and thermal properties. The method enables one to deposit PCD films having a thickness of at least 12 microns for applications on flat as well as curved substrates having wide use in the electronics industry. Thick PCD films of this invention have been found to be ideal for dissipating heat from radio frequency (RF) and microwave (MW) devices.
Type:
Grant
Filed:
September 13, 1990
Date of Patent:
February 16, 1993
Assignee:
Diamonex, Incorporated
Inventors:
Diwakar Garg, Wilman Tsai, Fred M. Kimock, Robert L. Iampietro, Paul N. Dyer
Abstract: A method for depositing a layer of additional material onto an electrically conductive thin layer structure preferably by means of the thermally induced reason of a compound in the vapor state, in which the thin structure is heated by an electric current passed through it. The method is especially suitable for reinforcing metallic conductor structures which have been made on a substrate by a direct-writing-laser chemical vapor deposition method, for example, fine tungsten wires.
Type:
Grant
Filed:
July 20, 1990
Date of Patent:
November 17, 1992
Assignee:
Mas-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.