Abstract: Asymmetric, disubstituted metallocene compounds have the general formula CpMCp? where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or indenyl moiety that includes at least one substituent group D1; Cp? is a second substituted cyclopentadienyl or indenyl moiety that includes at least one substituent group D1?. D1 is different from D1?.

Abstract: An organometallic compound having a low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, for forming an iridium-containing thin film by the CVD process is provided. The organometallic iridium compound is represented by the following general formula (1) or (2): wherein R1 represents hydrogen or a lower alkyl group; R2 to R7 each represents hydrogen, a halogen, or the like, provided that specific combinations of R1 to R7 are excluded; R8 represents a lower alkyl group; R9 to R12 each represents hydrogen, a halogen, or the like, provided that specific combinations of R8 to R12 are excluded. Iridium-containing thin films are produced by using the compound as a precursor by CVD process.

Abstract: A method for producing Group 8 (VIII) metallocene or metallocene-like compounds employs a compound that includes a Cp? anion, such as found, together with a counterion, in a cyclopentadienide or cyclopentadienide-like salt. In one embodiment, the method includes reacting a metal salt, a (Cp) compound, such as a substituted or unsubstituted cyclopentadiene or indene, and a ligand (L) to form an intermediate compound and reacting the intermediate compound with a Cp? compound, eg., a cyclopentadienide or cyclopentadienide-like salt, where the metal salt can be is a ruthenium, an osmium or an iron halide or nitrate and L is an electron pair donor. Unsubstituted, mono-substituted as well as symmetrically or asymmetrically di- or multi-substituted metallocenes or metallocene-like compounds can be produced. In another embodiment, unsubstituted or symmetrically substituted metallocenes are formed by reacting MX2(PPh3)m with a Cp? compound, where m=3 or 4.

Abstract: This invention relates to copper(+1)(?-diketonate)(L) and related copper complexes such as copper (+1)(?-ketoiminate)(L) represented by the formula: wherein X represents O or NR9, R1 and R3 are each independently comprised of the group C1-8 alkyl, C1-8 fluoroalkyl, aryl, C1-8 alkoxy, and C1-8 alkyl ethers and R2 is H, C1-8 alkyl, C1-8 alkoxy, and halogen, R9 is C1-8 alkyl, C1-8 fluoroalkyl, phenyl, alkylphenyl, trialkylsilyl, and L represents a ligand having the structure: (R4)(R5)C?(R6)(R7) or R4—C?C—R7 wherein R4, is comprised of the group C1-8 alkanol, C1-8 alkoxyalkanol, C1-8 unsaturated alkoxyalkanol, trialkylsilanol, C1-8 aalkylamine, phenylamine; R5, R6, and R7 are comprised of the group H, C1-8 alkyl, triakylsilyl, alkoxy or phenyl.

Abstract: This invention provides a process of preparing dihydrocarbylamido metal compounds. This process comprises bringing together, in a liquid reaction medium, at least one metal halide, MX4, where M is titanium, zirconium, or hafnium, and X is a halogen atom, with at least one dihydrocarbylamine, such that a mixture of (i) halometal amides in which the atom ratio of halogen to metal is greater than about 0.1 and less than about 2, and (ii) dihydrocarbylamine hydrohalide is produced. Then (i) and (ii) are separated from each other, and (i) is brought together with an alkali metal amide, ANR2, where A is an alkali metal, and R is a hydrocarbyl group, in a liquid medium, to produce a product comprised of substantially halogen-free dihydrocarbylamido metal compound. This invention further provides for purifying dihydrocarbylamido metal compounds by contact with a nitrile.

Abstract: Copper precursors of the formula (I): wherein: Cu is Cu(I) or Cu(II); x is an integer having a value of from 0 to 4; each of R, R′ and R″ may be the same as or different from one another and each is independently selected from the group consisting of H, C1-C6 alky), C1-C6 perfluoroalkyl and C6-C10 aryl; when Cu is Cu(I), A is a Lewis base; when Cu is Cu(II), A is: wherein x, R, R′ and R″ are as specified above.

Abstract: This invention is directed to a group of novel homologous eight membered ring compounds having a metal, such as copper, reversibly bound in the ring and containing carbon, nitrogen, silicon and/or other metals. A structural representation of the compounds of this invention is shown below: wherein M and M′ are each a metal such as Cu, Ag, Au and Ir; X and X′ can be N or O; Y and Y′ can be Si, C; Sn, Ge, Al, or B; and Z and Z′ can be C, N, or O. Substituents represented by R1, R2, R3, R4, R5, R6, R1′, R2′, R3′, R4′, R5′, and R6′ will vary depending on the ring atom to which they are attached. This invention is also directed to depositing metal and metal-containing films on a substrate, under ALD or CVD conditions, using the above novel compounds as precursors.

Abstract: Disclosed are organometallic compounds derived from Groups VIIb, VIII, IX, and X metals useful as precursors for the formation of metal containing powders and for the chemical deposition of the metals on substrates, particularly for the chemical vapor deposition of metal films suitable for the manufacture of electronic devices. Methods for their use are also disclosed.

Abstract: A volatile solid-source novel antimony precursor, Br2SbCH3, that may be utilized in semiconductor processing chambers for depositing antimony on a substrate by deposition methods, e.g., chemical vapor deposition, ion implantation, molecular beam epitaxy, diffusion and rapid thermal processing. The novel antimony compound of the invention is synthesized by combining tribromide antimony with trimethylantimony under heating conditions that form a Br2SbCH3 crystalline product.

Abstract: The present invention relates to a raw material for CVD comprising an organic iridium compound as a main component, said organic iridium compound being tris(2,4-octanedionato)iridium represented by Formula 1. Particularly preferably, the raw material for CVD consists only of the trans isomer of tris(2,4-octanedionato)iridium.

Abstract: A process of producing a strontium titanate, barium titanate or barium strontium titanate thin film by chemical vapor deposition which comprises using a titanium compound represented by formula (I): wherein R1 represents a hydrogen atom or a methyl group; and R2 and R3 each represent a methyl group or an ethyl group, or R2 and R3 are connected together to form a methylene group, a methylmethylene group or a dimethylmethylene group.

Abstract: An organometallic precursor of a formula M(L)2 for use in formation of metal oxide thin films, in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of −2, the ligand being represented by the following formula (I): wherein each of R1 and R2, independently, is a linear or branched C1-8 alkyl group; and R3 is a linear or branched C1-8 alkylene group. Also disclosed is a chemical vapor deposition method wherein a metal oxide thin film is formed on a substrate using the organometallic precursor. The precursor exhibits excellent volatility, thermal property and hydrolytic stability and is particularly suitable for the deposition of a multi-component metal oxide thin film containing a group IV metal such as titanium.

Abstract: A compound of formula (I) wherein X is aluminium, gallium or indium; each Y, which may be the same or different, is nitrogen or phosphorus; R1 and R2, which may be the same or different, are hydrogen, halogen or alkyl; and R3 to R7, which may be the same or different, are hydrogen or a saturated group, or R3 and R4, or R5 and R6 together represent a saturated divalent link thus completing a ring.

Abstract: Nitrogen containing analogs of Copper II &bgr;-diketonates which analogs are more stable source reagents for copper deposition when substantially free of solvents of excess ligands. The nitrogen containing analogs replace —O— with —N(R″)— wherein R″ is an alkyl group having from one to four carbon atoms. Replacement of each —O— is preferred although replacement of one —O— per cyclic ring is sufficient to improve stability of the copper source reagents. The source reagent can be purified by sublimation to remove solvents and excess ligands prior to semiconductor processing.

Abstract: A substrate processing device is provided in which an interior rotating body for a substrate holder, provided in the interior of a vacuum chamber, and an external rotating body, provided in the exterior of said vacuum chamber, are magnetically coupled, and which includes a can-seal type magnetic coupling-type rotation introduction mechanism which, by the rotational movement of the abovementioned exterior rotating body, controls the rotational movement of the abovementioned interior rotating body. A heat-accumulating member, maintained at a predetermined temperature, and a device for performing heat exchange between the heat-accumulating member and the substrate holder, are provided in said vacuum chamber interior.

Abstract: A ruthenium-containing thin film is produced by the chemical vapor deposition method etc. with the use of an organometallic ruthenium compound represented by the general formula (1), specific example of which is (2,4-dimethyl-pentadienyl)(ethylcyclopentadienyl)ruthenium: or an organometallic ruthenium compound represented by the general formula (7), specific example of which is carbonylbis(2-methyl-1,3-pentadiene)ruthenium: as the precursor.

Abstract: Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2n+2) process gas and/or is deposited from a plasma having a density of at least 1×1011 ions/cm3.

Abstract: A carbon deposition chamber is provided with several advantages. The substrate and the heating filaments are cooled to a temperature to prevent carbonization by permitting a cooling fluid to be passed through tubing connected to these elements in a heat sink like manner. The substrate is permitted to rotate back-and-forth to permit more even deposition of carbon films onto the substrate. The heating filaments are permitted to expand and contract without breakage by permitting the electrode attached to one end of the filaments to move freely as the filaments change in length. The gas mixture used within the deposition process is expressed from tubing through three zones, which are each individually determined with needle valves.

Abstract: An indium precursor composition having utility for incorporation of indium in a microelectronic device structure, e.g., as an indium-containing film on a device substrate by bubbler or liquid delivery MOCVD techniques, or as a dopant species incorporated in a device substrate by ion implantation techniques. The precursor composition includes a precursor of the formula R1R2InL wherein: R1 and R2 may be same or different and are independently selected from C6-C10 aryl, C6-C10 fluoroaryl, C6-C10 perfluoroaryl, C1-C6 alkyl, C1-C6 fluoroalkyl, or C1-C6 perfluoroalkyl; and L is &bgr;-diketonato or carboxylate. Indium-containing metal films may be formed on a substrate, such as indium-copper metallization, and shallow junction indium ion-implanted structures may be formed in integrated circuitry, using the precursors of the invention.

Abstract: The present invention provides a CVD material compound based on an organic ruthenium compound, the organic ruthenium compound consisting of one of cis and trans isomers of tris (2,4-octa-dionato) ruthenium (III). The organic ruthenium compound which consists of cis or trans isomer can be isolated by the steps of preparing tris (2,4-octa-dionato) ruthenium (III) in any method, making the tris (2,4-octa-dionato) ruthenium (III) adsorbed on an adsorbent including alumina, bringing the adsorbent into contact with a first solvent to elute the trans isomer and then bringing the adsorbent into contact with a second solvent having a polarity higher than that of the first solvent to elute the cis isomer.

Abstract: The invention relates to a process for preparing niobium(V) alkoxides and tantalum(V) alkoxides, in particular niobium(V) ethoxide and tantalum(V) ethoxide, by reacting NbCl5 or TaCl5 with an appropriate alcohol in the presence of ammonia, wherein NbCl5 or TaCl5 is dissolved at a temperature of from about 0° C. to −50° C. in the alcohol containing from about 5 to about 7 mol of ammonia per mol of NbCl5 or TaCl5 to be reacted.

Abstract: This invention relates to an improvement in a purification process for producing those liquid copper based complexes of &bgr;-diketones and, particularly the monovalent copper complexes of &bgr;-diketones, which are suited for application by chemical vapor deposition in the electronics industry. In the basic process for preparing a copper based complex, a reactive copper compound is reacted with a fluorinated &bgr;-diketonate and an organo source such as an olefinic source or one having acetylenic unsaturation. Purification is effected by contacting reaction product with a double deionized deoxygenated water source and preferably an acid/water source. An aqueous layer and an organic layer are formed with the aqueous layer containing byproducts and the organic phase containing product.

Abstract: A hard carbon thin film formed on a substrate has a graded structure in which a ratio of sp2 to sp3 carbon-carbon bonding in the thin film decreases in its thickness direction from a thin film/substrate interface toward a surface of the thin film. A method of forming the thin film involves varying the film-forming ion species over time to produce the composition gradient or structural gradient in the thickness direction of the thin film.

Abstract: An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.

Abstract: A wafer holder for a semiconductor manufacturing apparatus that has a high heat conductivity and includes a conductive layer such as heater circuit pattern which can be formed with a high precision pattern, a method of manufacturing the wafer holder, and a semiconductor manufacturing apparatus having therein the wafer holder are provided. On a surface of a sintered aluminum nitride piece, paste containing metal particles is applied and fired to form a heater circuit pattern as a conductive layer. Between the surface of the sintered aluminum nitride piece having the heater circuit pattern formed thereon and another sintered aluminum nitride piece, a glass layer is provided as a joint layer to be heated for joining the sintered aluminum nitride pieces together.

Abstract: The present invention relates to improved methods and apparatus for atomic layer deposition (ALD) of thin films on substrates such as wafers and flat panel displays. The invention provides an ALD reactor comprising a first temperature regulating system to control the temperature of the substrate and a second temperature regulating system to independently control the temperature of the reaction chamber walls. The invention also provides a method for ALD of a film onto a substrate in a reaction chamber, in which the temperature of the substrate is maintained to maximize ALD on the substrate while the temperature of the reaction chamber walls is set to minimize film growth thereon, whether by ALD, condensation, physisorption or thermal decomposition. The temperature of the walls may be maintained at the same temperature as the substrate, or higher or lower than the substrate temperature, depending upon the particular reaction being used.

Abstract: The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and/or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

Abstract: A process for forming a coating on a substrate by condensation of a coating material onto the substrate while the substrate is moving through an enclosure under vacuum in which evaporation of the coating material takes place. With the inventive process, deposits with controlled structure and adhesion can be made on moving substrate or support even at very high speeds, so that the process can advantageously be carried out continuously or at variable speed.

Abstract: A first organometallic compound is an organometallic compound for manufacturing a ruthenium film or a ruthenium compound film by a chemical vapor deposition process, wherein the organometallic compound is alkylcyclopentadienyl(cyclopentadienyl)ruthenium having a substituent of n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, tert-butyl group. A second organometallic compound is an organometallic compound for manufacturing an iridium film or an iridium oxide film by a chemical vapor deposition process, wherein the organometallic compound for chemical vapor deposition is alkylcyclopentadienyl(1,5-cyclooctadiene)iridium having a substituent of any alkyl group of n-propyl group, iso-propyl group, or n-butyl group, iso-butyl group, tert-butyl group.

Abstract: Apparatuses and methods for use in vacuum vapor deposition coating provide for simpler, economical and continuous operation. A system and method for continuously melting and evaporating a solid material for forming a coating vapor includes the use of a separate melting crucible and evaporating crucible. A system and method for energizing the evaporative solids to form a plasma which includes first and second electrodes and a device for selectively switching polarity between the first and second electrodes to avoid coating vapor deposition on the electrodes. Another a system and method for energizing the evaporative solids to form a plasma which includes an electric arc discharge apparatus with a cathodic and an anodic part. A continuously fed electrode is disclosed for continuous vaporization of electrode members in an electric arc discharge. An apparatus and method provides for measurement of the rate of evaporation from an evaporator and the degree of ionization in a vapor deposition coating system.

Abstract: A micro-electromagnetic device having a three dimensional structure is formed using laser chemical vapor deposition on a conductive surface. Arrays of electromagnetic devices may be formed. Various techniques for facilitating deposition on the conductive surface may be used. A helical antenna for use in the THz region may be formed in accordance with the laser chemical vapor deposition. The antenna is preferably formed on a bolometer.

Abstract: A method for the densification of an annular body having a porous structure and comprising layers of fabric, which includes locating a susceptor element within the porous body, the amount of the susceptor element occupying less than 5% of the volume of the porous body, the susceptor element being in the form of a layer comprising one of a foil and a fiber and having plural holes therein through which adjacent layers of fabric of the porous body contact each other, said susceptor element being made of a material which is more susceptible to heating by electromagnetic radiation than the material of the porous body, and exposing the porous body to hydrocarbon gas and simultaneously applying an electromagnetic field to the porous body, the susceptor element within the porous body at least in part causing heating of the porous body to a temperature at which the gas infiltrating the porous body deposits carbon within the porous body.

Abstract: The invention concerns complex compounds of oxidised copper (+1) stabilised by a ligand for the gas phase chemical deposit of copper in which copper is coordinated with a .beta.-diketonate and the ligand is an alkyne of which the triple bond is partially deactivated by one or two groups slightly attracting the electrons by said alkyne.

Abstract: A process for forming a metal oxide film by means of a chemical vapor deposition system, which comprises using a complex of a .beta.-diketone compound and a group IV metal glycolate, the complex being represented by formula (I): ##STR1## wherein M represents a metal atom of the group IV; R.sup.1 and R.sup.2 each represent a branched alkyl or cycloalkyl group having 4 to 8 carbon atoms; and R.sup.3 represents a straight-chain or branched alkylene group having 2 to 18 carbon atoms.

Abstract: In order to form a film of organic-inorganic hybrid material, such as a perovskite material, in a selected stoichiometric ratio upon a surface of a substrate, the proposed method entails a number of simple steps. First, a substrate and a selected quantity of an organic-inorganic hybrid material are placed in a chamber, with the hybrid material being placed on a heater. Then, the hybrid material is heated sufficiently, as by passing an electric current through the heater, to cause its total ablation. As a consequence, a film of the organic-inorganic hybrid material, in the aforesaid selected stoichiometric ratio, reassembles as a film upon a surface of the substrate. During the heating step, the chamber may be either evacuated to a pressure below 10.sup.-3 torr or filled with an inert gas, such as nitrogen.

Abstract: The invention relates to a composite composed of a plastic substrate and a thin, continuous metal-containing layer, characterised in that the metal-containing layer is ductile, adheres firmly to the plastic substrate, has a thickness of <2 .mu.m and is composed of a compound corresponding to the formulaM.sub.a O.sub.b C.sub.x N.sub.y B.sub.zwherein:M means one or more metals from the group comprising Ti, Ta, Nb, Zr and Hf,a=0.025 to 0.9b=0.025 to 0.7x=0.2 to 0.9y=0 to 0.7z=0 to 0.7a+b+x+y+z=1provided that the value of a, starting from the substrate surface, increases from a value approximating zero towards to the layer surface, and at least 50% of the carbon atoms at the base of the layer are bound to other carbon atoms by C--C bonds.

Abstract: A process for recovering a 1,1,1,5,5,5-hexafluoro-2,4-pentanedione ligand from a metal-ligand complex byproduct such as Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2, comprising: providing a copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 in a process stream; cooling and condensing the copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 to separate it from the process stream; contacting the copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 with a protonation agent, such as: sulfuric acid, hydrochloric acid, hydroiodic acid, hydrobromic acid, trifluoroacetic acid, trifluoromethanesulfonic acid, acid ion exchange resin, hydrogen sulfide, water vapor and mixtures thereof; and recovering 1,1,1,5,5,5-hexafluoro-2,4-pentanedione.

Abstract: The present invention relates to a method of forming an intermediate film and a hard cabon film over the inner surface of a cylindrical member having a bore, such as a bushing or a cylinder, with the hard carbon film being formed on the intermediate film with a uniform thickness, greatly enhancing of abrasion resistance of the inner surface. The cylindrical member is placed in a vacuum vessel, an auxiliary electrode of an intermediate film forming material, such as a titanium-silicon alloy or the like, is inserted in the bore of the cylindrical member, a sputtering gas is supplied into the vacuum vessel, a voltage is applied to the auxiliary electrode to produce a plasma around the auxiliary electrode in order that the intermediate film forming material is sputtered from the auxiliary electrode and an intermediate film is formed over the inner surface of the cylindrical member.

Abstract: A Cu(hfac) allyl-derived ligand precursor has been provided. The ligand includes group consisting of alkyl, phenyl, trialkylsilane, trialkoxylsilane, halodialkylsilane, dihaloalkylsilane, trihalosilane, triphenylsilane, alkoxyl, halogen, chloroformate, cynanide, cycloalkyl, cycloalkylamine, alkyl ether, isocyanate, and pentafluorobenzene. Examples of the allyl-derived ligand precursors have proved to be stable at room temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursors, including a Cu(hfac)(allyltrimethylsilane) precursor.

Abstract: A Cu(hfac) precursor with a substituted ethylene ligand has been provided. The substituted ethylene ligand includes bonds to molecules selected from the group consisting of C.sub.1 to C.sub.8 alkyl, C.sub.1 to C.sub.8 haloalkyl, H, and C.sub.1 to C.sub.8 alkoxyl. One variation, the 2-methyl-1-butene ligand precursor has proved to be stable at room temperature, and extremely volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. Because of the volatility, the deposition rate of copper deposited with this precursor is very high. A synthesis method has been provided which produces a high yield of the above-described precursor.

Abstract: A Pt compound which is in the form of a liquid at room temperature for producing Pt films usable as electrode films in semiconductor devices by the CVD method; a process for producing the compound; and a process for producing films with the use of the same.A novel compound trimethyl(ethylcyclopentadienyl)platinum (C.sub.2 H.sub.5 C.sub.5 H.sub.4)Pt(CH.sub.3).sub.3 is in the form of a liquid at room temperature and shows a sufficient vapor pressure at around 35.degree. C. Thus, it can be quantitatively supplied by gas bubbling or with the use of a liquid mass flow controller as a feedstock in the CVD method and thermally decomposed on a substrate at 150.degree. C. in a hydrogen atmosphere to give pure Pt films. This compound can be produced at a high yield by reacting iodotrimethylplatinum with sodium ethylcyclopentadienide in a solvent.

Abstract: Novel organometallic complexes of aluminium, gallium and indium are disclosed, having improved stability and volatility for use in CVD processes. These are donor ligand complexes of the formula MR.sub.2 L where M is the metal, R is an alkyl group and L is a ligand containing an amidine (R'N. . . C(R'). . . NR') group, where R' is H, alkyl etc.

Abstract: A platinum source reagent liquid solution, comprising:(i) at least one platinum source compound selected from the group consisting of compounds of the formulae:(A) RCpPt(IV)R'.sub.3 compounds, of the formula: ##STR1## wherein: R is selected from the group consisting of hydrogen, methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and each R' is independently selected from the group consisting of methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and(B) Pt(.beta.-diketonates).sub.2 of the formula: ##STR2## wherein: each R" is independently selected from the group consisting of methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, trifluoromethyl, perfluoroethyl, and perfluoro-n-propyl, and(ii) a solvent medium therefor.

Abstract: A method is provided for applying chemical vapor deposition (CVD) copper (Cu) to integrated circuit substrates using a Cu(hfac)(ligand) precursor with a silylolefin ligand including combinations of C1-C8 alkyl groups with at least one C2-C8 alkyloxy group. The alkyloxy groups include, ethoxy, propoxy, butoxy, pentyloxy, hexyloxy, heptyloxy, octyloxy, and aryloxy, while the alkyl groups include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, and aryl. The oxygen atoms of the alkyloxy groups, and the long carbon chains of both the alkyl and alkyloxy groups, increase the stability of the precursor by contributing electrons to the Cu(hfac) complex. The improved bond helps insure that the ligand separates from the (hfac)Cu complex at consistent temperatures when Cu is to be deposited. Combinations of alkyloxy and alkyl groups allow the molecular weight of the precursor to be manipulated so that the volatility of the precursor is adjustable for specific process scenarios.

Abstract: A process for depositing a layer of uniform thickness on an uneven surface of a substrate is disclosed. The layer could be deposited by plasma or chemical vapor deposition (CVD). The uneven surface of the substrate has horizontal surfaces and vertical sidewalls and is located on a movable platform. The platform is tilted and rotated as the layer is deposited so that the ions or the flow of chemical vapor reaches the horizontal surface and the sidewall at a similar incident angle. Thereby, the layer is evenly deposited and has a uniform thickness with proper coverage and planarization.

Abstract: A porous preform is densified by heating while emersed in a precursor liquid. Heating is achieved by passing a current through the preform or by an induction coil immersed in the liquid. Ways to control the densification process are also described.

Abstract: Disclosed is a method and apparatus for facilitating the decomposition of organometallic compounds such as TEOS in chemical vapor deposition reactors in order to form deposition films. The method generally includes: (1) introducing an organometallic compound and ozone molecules to a chemical vapor deposition reactor; (2) directing ultraviolet radiation into the chemical vapor deposition reactor to increase the rate at which oxygen atoms are formed from the ozone molecules present in the chemical vapor deposition reactor; and (3) decomposing the organometallic compound to form a deposition layer. The organometallic compound decomposes at an accelerated rate due in part to an increased amount of hydroxyl radicals present in the chemical vapor deposition reactor.

Abstract: A process for producing a .beta. copper diketone complex which consists of the steps: (a) mixing and reacting Cu.sub.2 O, 1,1,1,5,5,5-Hexafluoro-2, 4-pentanedione, and an additional cuprous L, an electronic donator; and (b) dehydrating the crude material, which is performed at the same time and/or right after the reaction in step (a).

Abstract: A novel process for depositing amorphous silicon has been described. The process features the homogeneous reaction of, decomposition of SiH2 and deposition of amorphous silicon, in a horizontal LPCVD reaction chamber. The SiH2 is produced by initially breaking down SiH4 in a heated autoclave apparatus, and then transferring the SiH2 to the LPCVD system through heated feed lines. This homogeneous process results in excellent thickness and resistivity uniformity for wafers placed along the horizontal axis of the LPCVD chamber.

Abstract: A reactor 10 defines a chamber 11 in which are disposed an upper electrode 12 and a lower workpiece electrode 13. The upper electrode is connected to a R.F. supply whilst the lower electrode is connected to a stress control unit 14. The stress control unit is used to adjust or maintain the effective resistance of the connection between the workpiece electrode 13 and ground.