Abstract: A method of designing a layout includes assigning a first color group to a plurality of first routing tracks. The method includes assigning a second color group to a plurality of second routing tracks. A first routing track is between adjacent second routing tracks. The method includes assigning a color from the first color group to each default conductive element along each first routing track. A color of a first default conductive element along each first routing track is different from a color of an adjacent default conductive element along a same first routing track. The method includes assigning a color from the second color group to each default conductive element along each second routing track. A color of a first default conductive element along each second routing track is different from a color of an adjacent default conductive element along a same second routing track.

Abstract: A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.

Abstract: Embodiments of the invention include a light emitting diode including a semiconductor structure including an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. A first metal layer is in direct contact with the p-type region. A second metal layer is in direct contact with the n-type region. The first and second metal layers are both formed on a first side of the semiconductor structure. A transparent optic is optically coupled to a major surface of the light emitting diode.

Abstract: Methods include inputting an array of pixels, where each pixel in the array of pixels has a pixel dose. The array of pixels represents dosage on a surface to be exposed with a plurality of patterns, each pattern of the plurality of patterns having an edge. A target bias is input. An edge of a pattern in the plurality of patterns is identified. For each pixel which is in a neighborhood of the identified edge, a calculated pixel dose is calculated such that the identified edge is relocated by the target bias. The array of pixels with the calculated pixel doses is output. Systems for performing the methods are also disclosed.

Abstract: Embodiments are related to integrated circuit (IC) fabrication and, more particularly, to a fluidic assembly process for the placement of light emitting diodes on a direct-emission display substrate.

Abstract: A method including: obtaining at least a characteristic of deformation of a resist layer in a first direction, as if there were no deformation in any directions perpendicular to the first direction; obtaining at least a characteristic of deformation of the resist layer in a second direction as if there were no deformation in the first direction, the second direction being perpendicular different to from the first direction; and obtaining at least a characteristic of three-dimensional deformation of the resist layer based on the characteristic of the deformation in the first direction and the characteristic of the deformation in the second direction.

Abstract: Measurement data is obtained for calibration fields that have been exposed by a lithographic apparatus using different field layouts and exposure sequences. The measurement data is classified in subsets by scan direction, step direction, field size and other variables. The measurement data is indexed by a time value that varies through each exposure sequence. Time values within different exposure sequences can be related using a normalized time value based on the beginning and end of each exposure sequence. An inter-field performance model is calculated for each subset. An intra-field component of a performance model is calculated with time as a third dimension. The time-indexed performance model is used to determine intra-field corrections for a variety of product exposures having product layouts and product exposure sequences different to the calibration fields, based on time and other a variables of the product layout and product exposure sequence.

Abstract: Systems and methods for prediction and measurement of overlay errors are disclosed. Process-induced overlay errors may be predicted or measured utilizing film force based computational mechanics models. More specifically, information with respect to the distribution of film force is provided to a finite element (FE) model to provide more accurate point-by-point predictions in cases where complex stress patterns are present. Enhanced prediction and measurement of wafer geometry induced overlay errors are also disclosed.

Abstract: A laser unit management system may include a server configured to hold first information provided with access limitation that allows an access with a first access authorization, second information provided with access limitation that allows an access with a second access authorization, and third information provided with access limitation that allows both an access with the first access authorization and an access with the second access authorization; and a laser unit including a laser output section and a controller, the laser output section being configured to output pulsed laser light toward an exposure unit that is configured to perform wafer exposure, the controller being configured to store the first information, the second information, and the third information in the server. The second information may include wafer-exposure-related information on the exposure unit and laser-control-related information on the laser unit that are in association with each other.

Abstract: A processing method in one embodiment includes: a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole periphery thereof using a camera to obtain shape data of the end face of the reference substrate over the whole periphery of the reference substrate; a step that takes an image of the end face of a substrate over the whole periphery thereof using a camera to obtain shape data of the end face of the substrate over the whole periphery of the substrate; a step that calculates warp amount of the substrate based on the obtained shape data; a step that forms a resist film on a surface of the substrate; a step that determines the supply position from which an organic solvent is to be supplied to a peripheral portion of the resist film and dissolves the peripheral portion by the solvent supplied from the supply position to remove the same from the substrate.

Abstract: Two or more color data can be combined to form a new data source to enhance sensitivity to defocus signal. Defocus detection can be performed on the newly formed data source. In a setup step, a training wafer can be used to select the best color combination, and obtain defocus detection threshold. This can include applying a segment mask, calculating mean intensities of the segment, determining a color combination that optimizes defocus sensitivity, and generating a second segment mask based on pixels that are above a threshold to sensitivity. In a detection step, the selected color combination is calculated, and the threshold is applied to obtain defocus detection result.

Abstract: A method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including: obtaining a relationship of a characteristic of one or more features in the portion with respect to dose; obtaining a value of the characteristic; and obtaining a target dose based on the value of the characteristic and the relationship.

Abstract: A method for measuring a thickness of a thin film includes: a step of basing on a training database to establish an artificial neural network, the training database including a plurality of modified spectra and a plurality of film thicknesses corresponding individually to the plurality of modified spectra; a step of measuring a sample having a coated film so as to obtain a spectrum; and, a step of running the artificial neural network already trained by the plurality of modified spectra so as to use the spectrum to estimate a thickness of the coated film on the sample. In addition, a system related to the method for measuring a thickness of a thin film is provided to include a measuring unit, a spectrometer and a processing unit.

Abstract: The selection of metrology targets for use in a focus and dose application includes providing a FEM wafer including a plurality of fields with one or more metrology targets, measuring the one or more metrology targets within each field of the FEM wafer, performing a regression process on measurement results from the one or more selected fields of the FEM wafer to determine one or more DOI values for the one or more metrology targets of the one or more selected fields, calculating one or more diagnostic parameters for the one or more metrology targets of the one or more selected fields based on the regression process performed on the one or more selected fields of the FEM wafer, and identifying a set of candidate metrology targets based on the one or more calculated diagnostic parameters of the one or more selected fields of the FEM wafer.

Abstract: Embodiments of the present disclosure provide a method of generating mandrel patterns. A mandrel pattern is generated by constructing a boundary box, initiating a plurality of lead mandrels, and extending the lead mandrels across the boundary box. When a pattern region includes holes, portions of mandrels are removed from the holes after extension of the leading mandrels.

Abstract: Layout design data is seeded with sampling markers. The sampling markers are used to determine patterning scores for patterning clusters in the layout design data, such that a patterning score corresponds to a particular coloring arrangement, and the value of a patterning score corresponds to how many of the sampling markers have a given color. Coloring arrangements are then applied to the patterning clusters based upon the patterning scores.

Abstract: Apparatus and methods for encoding panoramic content, such as by a wide field of view and large image size. In one implementation, a panoramic image may be mapped to a cube, equirectangular or any other projection e.g., icosahedron or octahedron. Projection may be selected adaptively based on evaluation of the panoramic content. Content evaluation may include obtaining rate distortion cost metric for a given projection configuration including projection type, projection arrangement, and projection orientation. Projection configuration with the lowest cost may be selected as target projection for encoding content. As content composition changes (e.g., object motion, texture presence and/or location) projection may be adaptively selected to match changes in the content. Adaptive content selection methodology may provide for a lower encoded bitrate for a given encoded quality and/or higher quality for a given bitrate.

Abstract: Methods of reducing a pattern displacement error, contrast loss, best focus shift, and/or tilt of a Bossung curve of a portion of a design layout used in a lithographic process for imaging that portion onto a substrate using a lithographic apparatus. The methods include adjusting an illumination source of the lithographic apparatus, placing one or more assist features onto, or adjusting a position and/or shape of one or more existing assist features in, the portion. Adjusting the illumination source and/or the one or more assist features may be by an optimization algorithm.

Abstract: Methodologies and a device for assessing integrated circuit and pattern for yield risk based on 3D simulation of semiconductor patterns are provided. Embodiments include generating, with a processor, a 3D simulation of semiconductor patterns; obtaining critical dimensions of distances between layers or within a layer of the 3D simulation of semiconductor patterns; comparing the set of critical dimensions with predefined minimum dimensions; and yield scoring each of the semiconductor patterns of the 3D simulation based on the comparing step.

Abstract: The present invention has an object to provide a scanning electron microscope which suppresses a potential gradient produced by preliminary charge without changing lens conditions of an electron microscope. As an aspect to achieve the above object, there is proposed a scanning electron microscope in which a scanning deflector is controlled so that a second beam is scanned to detect electrons released from a sample after scanning a first beam on the sample to charge the surface of the sample and the first beam is scanned so that charge density in a surrounding part within a scanned area by the first beam is increased relatively as compared with a center part within the scanned area by the first beam.

Abstract: There is provided a wavefront measuring method for obtaining wavefront information of an optical system. The method including: irradiating the optical system with a light beam; allowing the light beam passed via the optical system to come into a diffraction grating having periodicity in a first direction; and obtaining the wavefront information based on an interference fringe formed by light beams generated from the diffraction grating. The diffraction grating including: first portions which allow light to pass therethrough; and second portions which shield light, each of the second portions being provided between two of the first portions. A ratio between a width of one of the first portions in the first direction and a width of one of the second portions in the first direction is changed in the first direction, the one of the first portions and the one of the second portions being adjacent to each other.

Abstract: Embodiments are directed to a method and system for determining effective dose of a lithography tool. The method includes performing a series of open frame exposures with the lithography tool on a substrate to produce a set of controlled exposure dose blocks in resist, and then baking and developing the exposed substrate. The method further includes scanning the resultant open frame images with oblique light and capturing the light scattered from the substrate surface. The method further includes creating a haze map from the background signal of the scattered light data, converting the haze map to a graphical image file, and analyzing the graphical image file to determine effective dose of the lithography tool, wherein a brightness of the graphical image file is related to effective dose of the lithography tool.

Abstract: An image processing system, an imager, an area detection method, and a computer program easily and highly accurately detecting an area where a target object exists in an image acquired by imaging the target object are provided. The image processing system includes a projector for projecting a projection image having a stripe pattern or a grid pattern toward a target object, and an imager for imaging a target object on which the projection image is projected, and the imager includes an input image obtaining module for obtaining an input image acquired by imaging a target object on which the projection image is projected, a height information calculator for calculating height information of each pixel in the input image by using the input image, and a target object area detector for detecting a target object area where the target object exists in the input image, based on the height information of each pixel in the input image.

Abstract: A method of operating a projection exposure tool for microlithography is provided. The projection exposure tool has a projection objective for imaging object structures on a mask into an image plane using electromagnetic radiation, during which imaging the electromagnetic radiation causes a change in optical properties of the projection objective.

Abstract: A test structure and method of its manufacture are presented for use in metrology measurements of a sample pattern. The test structure comprises a test pattern comprising a portion of the sample pattern including at least one selected feature and a blocking layer at least partially covering regions of the test structure adjacent to the at least one selected region.

Abstract: A compact light source based on electron beam accelerator technology includes a storage ring, a booster ring, a linear accelerator and an undulator for providing light having the characteristics for actinic mask inspection at 13.5 nm. The booster ring and the storage ring are located at different levels in a concentric top view arrangement in order to keep the required floor space small and to reduce interference effects. Quasi-continuous injection by enhanced top-up injection leads to high intensity stability and combats lifetime reductions due to elastic beam gas scattering and Touschek scattering. Injection into the storage ring and extraction from the booster ring are performed diagonal in the plane which is defined by the parallel straight section orbits of the booster ring and the storage ring. For the top-up injection from the booster ring into the storage ring two antisymmetrically arranged Lambertson septa are used.

Abstract: Focus metrology methods and modules are provided, which use aerial-images-based transformations to share measurement information derived from multiple targets and/or to design additional targets to specified compliant targets, which enable simple adjustment of focus targets to changing production conditions. Methods comprise positioning two or more focus targets in each wafer field, conducting focus measurements of the targets, transforming the focus measurements into a single set of results for each field, using a transformation between the targets that is based on the aerial images thereof, and deriving focus results from the single sets of results; and possibly designing the focus targets from specified targets using aerial image parameters of the specified targets.

Abstract: The purpose of the present invention is to provide a pattern measurement condition setting device which appropriately sets a measurement condition for finding out an appropriate exposure condition.

Abstract: A method for a semiconductor layout pattern decomposition includes following steps. (a) receiving a semiconductor layout pattern; (b) performing a first separation/decomposition to the semiconductor layout pattern to obtain a grille pattern and a non-grille pattern; (c) recognizing a plurality of intersection regions in the grille pattern and alternately marking the intersection regions with a first region and a second region; (d) performing a second separation/decomposition to the grille pattern to obtain a plurality of first sub-patterns and a plurality of second sub-patterns perpendicular to each other, the first sub-patterns including the first regions, the second sub-patterns including the second regions; and (e) introducing a plurality of first assistance features on the first regions in the first sub-patterns and on the second regions on the second regions in the second sub-patterns, respectively. The step (a) to the step (e) are implemented using a computer.

Abstract: There are provided system and method of performing metrology operations related to a specimen.

Abstract: A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.

Abstract: Systems for and methods of detecting faults in semiconductor wafers are provided. One method includes, for instance: monitoring, with at least one sensor, a recipe for manufacturing a semiconductor wafer; tracking, with a fault detection system, a set of steps for the recipe; determining a start of a step; sensing a set of data related to at least one parameter of the step; generating, by an imaging system, an image of the set of data; displaying, on a display, the image of the set of data; calculating, by the fault detection system, a pixel area ratio from the image of the set of data; determining if a fault exists in the wafer based upon the pixel area ratio; and displaying, on the display, an indication of the fault during real-time and at an end of the step.

Abstract: Disclosed are apparatus and methods for determining optimal focus for a photolithography system. A plurality of optical signals are acquired from a particular target located in a plurality of fields on a semiconductor wafer, and the fields were formed using different process parameters, including different focus values. A feature is extracted from the optical signals related to changes in focus. A curve is fitted to the extracted feature of the optical signals as a function of focus. An extreme point in the curve is determined and reported as an optimal focus for use in the photolithography system.

Abstract: Systems and methods are disclosed herein for enhancing lithography printability, and in particular, for enhancing image contrast. An exemplary method includes receiving an integrated circuit (IC) design layout and generating an exposure map based on the IC design layout. The IC design layout includes a target pattern to be formed on a workpiece, and the exposure map includes an exposure grid divided into dark pixels and bright pixels that combine to form the target pattern. The method further includes adjusting the exposure map to increase exposure dosage at edges of the target pattern. In some implementations, the adjusting includes locating an edge portion of the target pattern in the exposure map, where the edge portion has a corresponding bright pixel, and assigning exposure energy from at least one dark pixel to the corresponding bright pixel, thereby generating a modified exposure map.

Abstract: Target optimization methods are disclosed herein for enhancing lithography printability. An exemplary method includes receiving an IC design layout for a target pattern, wherein the target pattern has a corresponding target contour; modifying the target pattern, wherein the modified target pattern has a corresponding modified target contour; and generating an optimized target pattern when the modified target contour achieves functionality of the target pattern as defined by a constraint layer. The method can further include defining a cost function based on the constraint layer, where the cost function correlates a spatial relationship between a contour of the target pattern and the constraint layer.

Abstract: Disclosed is a method of monitoring a focus parameter during a lithographic process. The method comprises acquiring first and second measurements of, respectively first and second targets, wherein the first and second targets have been exposed with a relative best focus offset. The method then comprises determining the focus parameter from first and second measurements. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.

Abstract: A method of controlling a manufacturing process, the method including the steps of a) providing a testing area with a periodic structure, where the periodic structure includes a series of sets of patterned features, b) illuminating the periodic structure with a light, thereby producing a non-zero order diffraction signal, c) collecting the diffraction signal to produce a test signature, d) matching the test signature with a reference signature, where the reference signature was previously produced by performing steps a), b), and c) with respect to a reference structure that is at least similar to the periodic structure, and e) controlling a manufacturing process using a control setting set associated with the matching reference signature.

Abstract: A semiconductor-wafer evaluation method includes: before the mirror-polishing step, measuring warp data of displacement of the surface of the semiconductor wafer with a capacitive shape measurement device; setting a prescribed width of an outer circumferential portion of the semiconductor wafer as a sampling range; performing fitting of the warp data within the sampling range with a fitting function in a predetermined fitting range; calculating a difference (Range) between a maximum and a minimum of the warp data after the fitting within the sampling range; and, after the mirror-polishing step, evaluating the nanotopography of the surface of the semiconductor wafer on the basis of the calculated difference (Range).

Abstract: In one embodiment, a method of aperture alignment for a multi charged particle beam writing apparatus includes irradiating a shaping aperture member with a charged particle beam while changing an incident direction, detecting a current for each of the incident directions of the charged particle beam, producing a current distribution map based on the incident direction and the current, and moving the shaping aperture member or a blanking aperture member based on the current distribution map to align the shaping aperture member with the blanking aperture member.

Abstract: Plasma applications are disclosed that operate with helium or argon at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species in the effluent stream. Laminar gas flow is developed prior to forming the plasma and at least one of the electrodes is heated which enables operation at conditions where the helium plasma would otherwise be unstable and either extinguish, or transition into an arc. The techniques can be employed to remove organic materials from a substrate, thereby cleaning the substrate; activate the surfaces of materials thereby enhancing adhesion between the material and an adhesive; kill microorganisms on a surface, thereby sterilizing the substrate; etches thin films of materials from a substrate, and deposit thin films and coatings onto a substrate.

Abstract: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.

Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.

Abstract: A defect inspection system includes an inspection sub-system and a controller communicatively coupled to the detector. The inspection sub-system includes an illumination source configured to generate a beam of illumination, a set of illumination optics to direct the beam of illumination to a sample, and a detector configured to collect illumination emanating from the sample. The controller includes a memory device and one or more processors configured to execute program instructions. The controller is configured to determine one or more target patterns corresponding to one or more features on the sample, define one or more care areas on the sample based on the one or more target patterns and design data of the sample stored within the memory device of the controller, and identify one or more defects within the one or more care areas of the sample based on the illumination collected by the detector.

Abstract: Disclosed is an electron beam lithography method. The method comprises obtaining a target pattern having a first width to be formed on a substrate, acquiring a dose pattern including a fixed dose cell which corresponds to a region of the dose pattern with a constant dose amount of electron beam to be provided onto the substrate and a variable dose cell which corresponds to a region of the dose pattern with a variable dose amount which is varied based on the first width of the target pattern, and providing the electron beam to expose the substrate according to the dose pattern.

Abstract: Provided is a method of generating test patterns. The method includes generating a first polygon, disposing the first polygon in a pattern region, selecting one region from peripheral regions of the first polygon, generating a second polygon, disposing the second polygon in the selected region, and repeating the above processes.

Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.

Abstract: Disclosed is a substrate comprising a combined target for measurement of overlay and focus. The target comprises: a first layer comprising a first periodic structure; and a second layer comprising a second periodic structure overlaying the first periodic structure. The target has structural asymmetry which comprises a structural asymmetry component resultant from unintentional mismatch between the first periodic structure and the second periodic structure, a structural asymmetry component resultant from an intentional positional offset between the first periodic structure and the second periodic structure and a focus dependent structural asymmetry component which is dependent upon a focus setting during exposure of said combined target on said substrate. Also disclosed is a method for forming such a target, and associated lithographic and metrology apparatuses.

Abstract: A method of forming an integrated circuit includes the following steps. A substrate including a plurality of exposure fields is provided, and each of the exposure field includes a target portion and a set of alignment marks. Measure the set of alignment marks of each exposure field by a measuring system to obtain alignment data for the respective exposure field. Determine an exposure parameter corresponding to each exposure field and an exposure location on the target portion from the alignment data for the respective exposure field by a calculating system. Feedback the alignment data to a next substrate.

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate. Using the lithographic process to produce a first structure on the substrate, the first structure having a dose-sensitive feature which has a form that depends on exposure dose of the lithographic apparatus on the substrate. Using the lithographic process to produce a second structure on the substrate, the second structure having a dose-sensitive feature which has a form that depends on the exposure dose of the lithographic apparatus but which has a different sensitivity to the exposure dose than the first structure. Detecting scattered radiation while illuminating the first and second structures with radiation to obtain first and second scatterometer signals. Using the first and second scatterometer signals to determine an exposure dose value used to produce at least one of the first and second structures.

Abstract: Disclosed herein is a computer-implemented method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method comprising defining a multi-variable cost function, the multi-variable cost function being a function of a stochastic effect of the lithographic process.