Abstract: Embodiments of the present invention describe methods of selecting a subset of test patterns from an initial larger set of test patterns for calibrating a computational lithography model. An example method comprises: generating an information matrix for the initial larger set of test patterns, wherein the terms of the information matrix comprise one or more identified model parameters that represent a lithographic process response; and, executing a selection algorithm using terms of the information matrix to select the subset of test patterns that effectively determines values of the identified model parameters that contribute significantly in the lithographic process response, wherein the subset of test patterns characteristically represents the initial larger set of test patterns. The selection algorithm explores coverage relationships existing in the initial larger set of test patterns.

Abstract: A substrate support device includes a plate portion including a heater plate that includes a heating element provided in the heater plate, and also including a first cooling plate provided on a bottom surface of the heater plate and having a first flow path, and a second cooling plate provided on a top surface of the heater plate and having a second flow path; and a shaft portion supporting the plate portion and including a line connected to the heating element to supply an electric current to the heating element, and a tube supplying a coolant to the first cooling plate and the second cooling plate, the line and the tube being provided inside the shaft portion.

Abstract: In order to provide a semiconductor device that includes a conductive layer on one surface of a semiconductor substrate with an insulating layer therebetween, a bump on the other surface of the semiconductor substrate, and a through-electrode through the semiconductor substrate connecting the conductive layer with the bump, a through-hole is formed from the other surface of the semiconductor substrate to be connected to the conductive layer, a seed metal film is formed on the through-hole and the other surface, a photoresist is formed thereon, a mask layer is formed by processing the photoresist with a pattern larger than the through-hole, a plated film is grown by electrolytic plating so as to integrally form the through-electrode and a part of the bump.

Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application.

Abstract: The present disclosure provides a method for pattern correction for electron-beam (e-beam) lithography. In accordance with some embodiments, the method includes splitting a plurality of patterns into a plurality of pattern types; performing model fittings to determine a plurality of models for the plurality of pattern types respectively; and performing a pattern correction to an integrated circuit (IC) layout using the plurality of models.

Abstract: Methods for measuring photosensitizer concentrations in a photo-sensitized chemically-amplified resist (PS-CAR) patterning process are described. Measured photosensitizer concentrations can be used in feedback and feedforward control of the patterning process and subsequent processing steps. Also described is a metrology target formed using PS-CAR resist, and a substrate including a plurality of such metrology targets to facilitate patterning process control.

Abstract: A lithographic mask has a substrate substantially transmissive for radiation of a certain wavelength, the substrate having a radiation absorbing material in an arrangement, the arrangement configured to apply a pattern to a cross-section of a radiation beam of the certain wavelength, wherein the absorbing material has a thickness which is substantially equal to the certain wavelength divided by a refractive index of the absorbing material.

Abstract: Methods and systems are provided for a scanning microscope to rapidly form a partial digital image of an area. The method includes performing an initial scan for the area and using initial scan to identify regions representing features of interest in the area. Then, the method performs additional adaptive scans of the regions representing structures of interest. Such scans adapt the path of the scanning beam to follow the edges of a feature of interest by performing localized scan patterns that intersect the feature edge, and directing the localized scan patterns to follow the feature edge.

Abstract: A design layout for a semiconductor chip includes information on shapes desired to be fabricated. Clusters of photolithographic exposure “shots” are generated and subject to a measure of shot density to approximate a mask shape that generates the desired fabricated shapes when exposed during wafer fabrication. A simulation is run on the clusters of shots to estimate the resulting fabrication shapes that the clusters of shots create. The clusters of shots are modified to align the estimated fabrication shapes more closely with desired fabrication shapes. The process of simulating and modifying the shots is iterative, repeating until the estimated fabrication shapes are within a desired error difference of the planned fabrication shape.

Abstract: Provided is an integrated circuit (IC) manufacturing method. The method includes receiving a design layout of an IC, the design layout having a main feature; performing a process correction to the main feature thereby generating a modified main feature; using a computer, generating a simulated contour of the modified main feature, the simulated contour having a plurality of points; generating a plurality of assistant data in computer readable format, wherein each assistant data includes at least one process performance factor associated with one of the points; and keeping the simulated contour and the assistant data for use by a further process stage, such as mask making, mask inspection, mask repairing, wafer direct writing, wafer inspection, and wafer repairing.

Abstract: A recording medium stores a program for causing a computer to execute a method of calculating a resist pattern.

Abstract: A position detector configured to detect a position of an object to be detected. The position detector has an optical system configured to detect a mark on the object to be detected that includes a lens that has a positive refractive power, and a reflection member configured to reflect a light flux that passes through the lens in a convergent state or a divergent state. The reflection member is configured from at least one material of a material that exhibits a refractive index of less than 1.0 and an extinction coefficient of greater than 0.0, and a material that exhibits a refractive index of greater than 1.0 and an extinction coefficient of greater than 0.5.

Abstract: A patterning method may employ a particle beam, such as an electron beam (E-beam) and an exposure system that may include preparing an exposure layout defining a spatial distribution of an E-beam, performing an E-beam exposure process to a mask layer, based on the exposure layout, performing a developing process to the mask layer to form mask patterns including a first pattern. The first pattern may be a single solid pattern, and the exposure layout may include a first data associated with a plurality of E-beam conditions defined for a first region corresponding to the first pattern.

Abstract: Methods of preparing layouts for semiconductor devices and semiconductor devices fabricated using the layouts are provided. Preparing the layouts for semiconductor devices may include disposing assistant patterns near a main gate pattern that is provided on a weak active pattern. The weak active pattern may be, for example, an outermost one of active patterns and may be one expected to have an increased width during a fabrication process.

Abstract: A method of processing a substrate is described herein. The method includes positioning a substrate on a stage associated with a maskless direct writing pattern generator. The substrate has an undeveloped, unexposed photoresist layer formed thereon. The photoresist layer has a plurality of writing pixel locations. The method includes delivering predetermined doses of electromagnetic energy from the pattern generator to each writing pixel location. A first predetermined dose is a full tone dose, and the first predetermined dose is delivered to at least one writing pixel location. A second predetermined is a fractional tone dose, and the second predetermined dose is delivered to at least one writing pixel location. A third predetermined dose is either a fractional dose or a zero tone dose. The third predetermined dose is delivered to at least one writing pixel location, and the third predetermined dose is different from the second predetermined dose.

Abstract: A method for lithography exposing process is provided. The method includes performing a first lithography exposing process to a resist layer using a mask having a focus-sensitive pattern and an energy-sensitive pattern; measuring critical dimensions (CDs) of transferred focus-sensitive pattern and transferred energy-sensitive pattern on the resist layer; extracting Bossung curves from the CDs; and determining slopes of the Bossung curves.

Abstract: Deformation of a substrate due to one or more processing steps is determined by measuring substrate alignment data at lithographic processing steps before and after the one or more processing steps. Any abnormal pattern in the alignment data differential is identified by comparing the calculated alignment data differential with previous data accumulated in a database. By comparing the abnormal pattern with previously identified tool-specific patterns for alignment data differential, a processing step that introduces the abnormal pattern and/or the nature of the abnormal processing can be identified, and appropriate process control measures can be taken to rectify any anomaly in the identified processing step.

Abstract: Systems and methods are disclosed for describing and tracking edges within the field of view of one or more imaging devices. In one example, the present system defines a row of pixels taken across a width of the edge, and then determines a binary edge descriptor for the edge by comparing at least one of grayscale values and contrast of pixels within respective pixel pairs from the row of pixels, the result of the comparisons setting bits within the binary descriptor.

Abstract: Machine learning solutions compensate for data missing from input (training) data and thereby arrive at a predictive model that is based upon, and consistent with, the training data. The predictive model can be generated within a learning algorithm framework by transforming the training data to generate modality or similarity kernels. Similarity values can be generated for these missing similarity values.

Abstract: A method comprises: accessing data representing a layout of a layer of an integrated circuit (IC) comprising a plurality of polygons defining circuit patterns to be divided among a number (N) of photomasks for multi-patterning a single layer of a semiconductor substrate, where N is greater than one. For each set of N parallel polygons in the layout closer to each other than a minimum separation for patterning with a single photomask, at least N?1 stitches are inserted in each polygon within that set to divide each polygon into at least N parts, such that adjacent parts of different polygons are assigned to different photomasks from each other. Data representing assignment of each of the parts in each set to respective photomasks are stored in a non-transitory, computer readable storage medium that is accessible for use in a process to fabricate the N photomasks.

Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimization criterion. These control commands are applied to the optical elements, before the mask is illuminated.

Abstract: Some embodiments include a semiconductor device which includes a first conductive layer formed on the semiconductor substrate and a first contact plug connected to the first conductive layer. The first conductive layer includes a plurality of loops of conductive material over the semiconductor substrate. Each of the plurality of loops comprises a first opening and a second opening, a first portion and a second portion sandwiching the first opening, a third portion and a fourth portion sandwiching the second opening, a first tab portion connected to the first portion and the third portion and having a first length in a first direction and a first width in a second direction perpendicular to the first direction, and a second tab portion connected to the second portion and the fourth portion and having a second length in the first direction and a second width in the second direction.

Abstract: A component for setting a scan-integrated illumination energy in an object plane of a microlithography projection exposure apparatus is disclosed. The component includes a plurality of diaphragms which are arranged alongside one another with respect to a direction perpendicular to the scan movement and which differ in their form and the position of which can be altered approximately in the scan direction so that a portion of the illumination energy can be vignetted by at least one diaphragm. The form of the individual diaphragm is specifically adapted to the form of the illumination in a diaphragm plane in which the component is arranged. This has the effect that at least parts of the delimiting edges of two diaphragms always differ in the case of an arbitrary displacement of the diaphragms.

Abstract: The present disclosure provides a method for electron-beam (e-beam) lithography patterning. The method includes forming a resist layer on a substrate; performing a first e-beam exposure process to the resist layer according to a first pattern; performing a second e-beam exposure process to the resist layer according to a second pattern, wherein the second patterned is overlapped to the first pattern on the resist layer; and developing the resist layer.

Abstract: There is provided a liquid processing apparatus including a rotation unit configured to hold the target substrate and rotate the target substrate around a vertical axis; a processing solution supply nozzle configured to supply the processing solution to the surface of the target substrate being rotated; a first gas supply unit configured to form a downward flow of a first gas that flows over the entire surface of the target substrate and is introduced into a cup in order to form a processing atmosphere suitable for a liquid process to be performed; and a second gas supply unit configured to form a downward flow of a second gas different from the first gas in a region outside the downward flow of the first gas. The first gas supply unit and the second gas supply unit are provided at a ceiling portion of the housing serving as the processing space.

Abstract: The present disclosure is directed to a method of determining one or more focus values for a lithographic scanner. An optical signal including at least a first variable and a second variable is detected by an optical analysis system from at least one test sample for a plurality of programmed focus error values. A first variable value showing sensitivity to focus is selected based upon a corresponding responsiveness of the second variable to change of focus and/or a corresponding linearity of raw focus with respect to the programmed focus error. At least one focus value for the lithographic scanner is determined based upon at least one determined raw focus value corresponding to the selected first variable value.

Abstract: An embodiment of the present invention provides a fly eye lens which is applied to a proximity exposure machine optical system. The fly lens includes a first lens assembly and a second lens assembly, wherein the first lens assembly includes a plurality of lenses which form a first lens face, and the second lens assembly includes a plurality of lenses which form a second lens face. The first lens face is used to split an incident broad light beam into narrow light beams and then refract the narrow light beams onto the second lens face, and the second lens face is used to dispersively refract the received narrow light beams onto a concave mirror in the optical system. A lens closer to a center of the second lens face has a higher transmittivity, and a lens farther from the center of the second lens face has a lower transmittivity.

Abstract: A method of determining a dose-to-clear of a photoresist on a wafer includes providing an image of the wafer after the photoresist was exposed to a dose of energy and was developed, transforming the image of the wafer into frequency spectrum data, calculating an average frequency spectrum component of the frequency spectrum data, calculating a difference between the average frequency spectrum component and a noise average frequency spectrum component of a noise average frequency spectrum, and determining a dose-to-clear of the photoresist based on the difference between the average frequency spectrum component and the noise average frequency spectrum component.

Abstract: A method of testing a scattering bar by simulation includes preparing an OPC mask model including a main pattern and a scattering bar pattern, forming a scattering bar OPC model by adjusting an image plane of the OPC mask model located at a middle portion of a photoresist layer to a top portion of the photoresist layer, simulating an exposure of the scattering bar OPC model, simulating a profile of the exposed scattering bar OPC model, and testing the simulated profile.

Abstract: A semiconductor device includes: a Through Silicon Via (TSV) region extending in a first direction and crossing a center portion of a semiconductor device; a plurality of cell regions disposed at both sides of the TSV region in a second direction crossing the first direction; a plurality of peripheral circuit regions each disposed between the TSV region and a corresponding cell region or between two neighboring cell regions in the first direction; a plurality of test pad regions each disposed at an edge portion of the semiconductor device and having a plurality of test pads, wherein the plurality of test pad regions encloses the cell regions, the peripheral circuit regions, and the TSV region; and a reservoir capacitor disposed below corresponding test pads in a test pad regions.

Abstract: Methods for patterning fins for fin-like field-effect transistor (FinFET) devices are disclosed. An exemplary method includes providing a semiconductor substrate, forming a plurality of elongated protrusions on the semiconductor substrate, the elongated protrusions extending in a first direction, and forming a mask covering a first portion of the elongated protrusions, the mask being formed of a first material having a first etch rate. The method also includes forming a spacer surrounding the mask, the spacer being formed of a second material with an etch rate lower than the etch rate of the first material, the mask and the spacer together covering a second portion of the elongated protrusions larger than the first portion of the elongated protrusions. Further, the method includes removing a remaining portion of the plurality of elongated protrusions not covered by the mask and spacer.

Abstract: A lithography method for a pattern to be etched on a support, notably to a method using electron radiation with direct writing on the support. Hitherto, the methods for correcting the proximity effects for dense network geometries (line spacings of 10 to 30 nm) have been reflected in a significant increase in the radiated doses and therefore in the exposure time. According to the invention, the patterns to be etched are modified as a function of the energy latitude of the process, which allows a reduction of the radiated doses.

Abstract: A method of manufacturing a display panel includes: a first step of forming a partition wall layer above a substrate; a second step of exposing the partition wall layer using a first photomask that has a mask pattern corresponding to a blue opening; a third step of exposing the partition wall layer using a second photomask that has a mask pattern corresponding to a red opening and a green opening; a fourth step of forming a partition wall by removing the partition wall layer to form the red opening, the green opening , and the blue opening in the partition wall layer; and a fifth step of forming a light emitting layer in each opening.

Abstract: A method of setting an exposure apparatus to expose exposure sectors defined on a resist film formed on a surface of a substrate with proper values of an exposure amount and a focus value for forming a pattern having a predetermined dimension includes exposing and developing an exposure sector defined on a reference substrate by a first exposure apparatus having a first state, and imaging the same. The method exposes and develops exposure sectors defined on an inspection substrate by a second exposure apparatus having a second state where at least one of the exposure amount and the focus value is unknown, and forms and images a pattern on the inspection substrate. The method determines the proper values for the exposure amount and the focus value for the second state based on luminance of the exposure sector of reference data and luminances of the exposure sectors of inspection data.

Abstract: Disclosed herein is a computer-implemented method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method comprising defining a multi-variable cost function, the multi-variable cost function being a function of a stochastic effect of the lithographic process.

Abstract: Methods of analyzing photolithography processes are provided. The methods may include obtaining an image from a pattern formed on a wafer and obtaining dimensions of the image. The methods may further include converting the dimensions into a profile graph and then dividing the profile graph into a low-frequency band profile graph and a high-frequency band profile graph.

Abstract: An exposure apparatus and a fabrication method thereof include an obtaining unit configured to obtain data of a first imaging position at which light from a first pattern having, as a longitudinal direction thereof, a first direction perpendicular to an optical axis of a projection optical system forms an image via the projection optical system, and data of a second imaging position at which light from a second pattern having, as a longitudinal direction thereof, a second direction which is not parallel to the first direction and is perpendicular to the optical axis forms an image via the projection optical system, when the first pattern and the second pattern are respectively placed on an object plane of the projection optical system, and a control unit configured to control a stage so that a substrate is positioned at a target position of the substrate along the optical axis.

Abstract: A local exposure apparatus for performing exposure processing on a specific area of a photosensitive film formed on a substrate includes a substrate conveyor configured to define a substrate conveying path and to horizontally convey the substrate along the substrate conveying path, a chamber configured to define an exposure processing space, a light source including a plurality of light-emitting elements linearly arranged above the substrate conveying path, a light emission drive unit configured to selectively drive one or more of the light-emitting elements of the light source, a substrate detector configured to detect the substrate conveyed by the substrate conveyor, and a control unit configured to control the light emission drive unit such that, when the specific area of the photosensitive film moves below the light source, only the light-emitting elements capable of irradiating the given area are driven to emit the light.

Abstract: An exposure method for an LCD glass substrate is revealed and includes: providing at least two photo masks, wherein each the photo mask includes active and inactive area with alignment-precision measurement-and-check marks disposed around the active area; performing exposure with each the photo mask on a separate reference substrate at a corresponding position, performing measurement of the alignment-precision measurement-and-check marks formed on the reference substrate, determining whether to modify a parameter of the exposure based on the measurement result, and obtaining accurate exposure parameter of each the photo mask; and combining the accurate exposure parameter of each the photo mask, using the combined exposure parameter to perform exposure sequentially with the at least two photo masks on the same substrate at corresponding positions, thereby obtaining an exposed pattern.

Abstract: A lithographic apparatus includes a uniformity correction system located at a plane and configured to receive a substantially constant pupil when illuminated with the beam of radiation. The uniformity correction system includes fingers that move into and out of intersection with a beam so as to correct an intensity of respective portions of the radiation beam. According to another embodiment, a method includes for: focusing a beam of radiation at a first plane to form pupil; adjusting the intensity of the beam near the first plane by moving fingers located near the first plane into and out of a path of the beam of radiation, wherein a width of a tip of each of the fingers is larger than that of corresponding actuating devices used to move each corresponding one of the fingers; patterning the beam; and projecting the patterned beam onto a substrate.

Abstract: In a lithographic apparatus, a control system is provided to automatically reduce throughput in the event that lens-heating aberrations exceed a certain threshold. The determination of whether lens-heating aberrations will exceed the threshold may be based upon a prediction, e.g. using a lens-heating model, or on measurements taken from a previously exposed substrate. Reduction of throughput of the device manufacture may be effected by reducing beam power or the duty cycle of the apparatus. In a particular embodiment, the time taken for substrate movement between exposure portions is increased.

Abstract: According to one embodiment, a production method for a mask layout of an exposure mask includes evaluating a candidate layout by comparison between an imaged image group and a reference image group. The imaged image group is composed of a plurality of imaged images of patterns formed by performing lithography under a plurality of levels of exposure condition using the candidate layout. The reference image group is composed of a plurality of reference images produced by simulation on assumption of a plurality of levels of the exposure condition.

Abstract: An exposure apparatus that exposes a substrate to light having a set light source shape via a mask. The apparatus includes a plurality of light sources arrayed two-dimensionally. A light source control unit controls turning on and off of each of the plurality of light sources based on turning on and off information corresponding to the set light source shape by referring to a plurality of kinds of information on light source shapes, in which the plurality of light sources are arrayed two-dimensionally, and turning on and off information corresponding to the plurality kinds of information on the light source shapes.

Abstract: Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.

Abstract: A method includes scanning a lithography mask with a repair process, and measuring back-scattered electron signals of back-scattered electrons generated from the scanning. An endpoint is determined from the back-scattered electron signals. A stop point is calculated from the endpoint. The step of scanning is stopped when the calculated stop point is reached.

Abstract: A processing liquid supplying apparatus supplies a processing liquid to a process object via a discharging part. In one embodiment, the apparatus includes: a processing liquid source that supplies a processing liquid; an intermediate tank connected to the processing liquid source via a transport line; a feed line provided between the intermediate tank and the discharging part; an evacuating unit that evacuates an interior of the intermediate tank to transport the processing liquid from the processing liquid source to the intermediate tank through the transport line; and a pressure adjusting unit that supplies a gas into the intermediate tank to return a pressure in the evacuated intermediate tank from a reduced pressure to a normal pressure, thereby to place the intermediate tank ready for feeding the processing liquid, having been transported into the intermediate tank, into the feed line.

Abstract: In a so-called step-and-repeat method in which a mask pattern is circumferentially written by exposure onto each predetermined region on a surface of a roller mold, an object of the present invention is to improve the spacing accuracy between the mask patterns and to suppress the occurrence of misalignment at a seam when the mask pattern has been written onto a 360-degree circumference.

Abstract: In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (?f). In some embodiments, the sensitivity to changes in ?f is reduced by varying the charged particle surface dosage for a portion of the pattern. Methods for forming patterns on a surface, and for manufacturing an integrated circuit are also disclosed, in which pattern sensitivity to changes in ?f is reduced.

Abstract: A layout decomposition method and a method for manufacturing a semiconductor device applying the same are provided. According to the layout decomposition method, a design layout is received by the logic processer of a computing system. A design rule for layout decomposition is then identified by the logic processer, including identifying the loose areas (areas with loosely distributed features) and dense areas (areas with densely distributed features) on a substrate, and identifying first areas with odd-numbered features and second areas with even-numbered features on the substrate. Next, a first mask with a first pattern and a second mask with a second pattern are generated corresponding to results of design rule identification by the computing system.

Abstract: The present disclosure provides a method of repairing a mask. The method includes inspecting the mask using a mask inspection tool to identify a defect on a circuit pattern of the mask; repairing the defect using a mask repair tool to form a repaired pattern; forming a first group of diffraction images of the repaired pattern and a second group of diffraction images of a reference feature; and validating the mask by comparing the first group of diffraction images with the second group of diffraction images.