Abstract: Photoresist monomers which can be used to form photoresist polymers and photoresist compositions using the same which are suitable for photolithography processes employing a deep ultraviolet light source and copolymers thereof. Monomers are represented by following Formula 1: wherein, R1, is —OH or —R—OH; R represents substituted or unsubstituted linear or branched (C1-C10) alkylene, substituted or unsubstituted (C1-C10) alkylene comprising an ether linkage, substituted or unsubstituted (C1-C10) alkylene comprising an ester linkage, or substituted or unsubstituted (C1-C10) alkylene comprising an ketone moiety; and 1 is an integer of 1 or 2.

Abstract: An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, k is 0 or 1, Z is a divalent C2-C20 hydrocarbon group which forms a single ring or bridged ring with the carbon atom and which may contain a hetero atom, m is 0 or 1, n is 0, 1, 2 or 3, and 2m+n=2 or 3. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and is suited for micropatterning using electron beams or deep-UV.

Abstract: A photo-resist mask of organic compound is stripped off after the pattern transfer to a layer thereunder, wherein the photo-resist mask is firstly exposed to vapor of organic solvent for reducing the thickness through a reflow, and, thereafter, the photo-resist mask is ashed in an oxygen plasma, whereby the dry ashing is completed within a short time period by virtue of the reduction of thickness.

Abstract: An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, Z is a divalent C2-C20 hydrocarbon group which forms a single ring or bridged ring with the carbon atom, m is 0 or 1, n is 0, 1, 2 or 3, and 2m+n=2 or 3. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for micropatterning using electron beams or deep-UV.

Abstract: There is described a method of forming a fine pattern aimed at depositing a silicon-nitride-based anti-reflection film which is stable even at high temperature and involves small internal stress. The method is also intended to preventing occurrence of a footing pattern (a rounded corner) in a boundary surface between a photoresist and a substrate at the time of formation of a chemically-amplified positive resist pattern on the anti-reflection film. The method includes the steps of forming a silicon-nitride-based film directly on a substrate or on a substrate by way of another layer; and forming a photoresist directly on the silicon-nitride-based film or on the silicon-nitride-based film by way of another layer. The silicon-nitride-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700° C., through use of a plasma CVD system.

Abstract: Disclosed is an norbornene-based copolymer for photoresist, a preparation method thereof, and a photoresist composition comprising the same. The copolymer of the present invention exhibits high transparency to light of 193 nm wavelength and an excellent etching resistance, excellent resolution due to the remarkable difference between light-exposed part and light-unexposed part in the dissolving rate and excellent adhesion to the substrate due to very hydrophilic diketone group of its own. As a result, the copolymer of the present invention is very useful as ArF exposure photoresist material in the fabrication of semiconductor devices.

Abstract: A resist patterning process is provided comprising the steps of (a) applying a resist composition onto a substrate to form a resist film, (b) prebaking the resist film, (c) exposing the prebaked resist film to a pattern of radiation, (d) post-exposure baking the exposed resist film, (e) developing the resist film to form a resist pattern, and (f) post baking the resist pattern for causing thermal flow. The resist composition contains a polymer comprising structural units of formula [I] in a backbone and having acid labile groups on side chains as a base resin and a photoacid generator.

Abstract: A photosensitive resin composition and a method of forming a positive resist pattern by the use of the composition are disclosed. The photosensitive resin composition comprises (A) a resinous compound containing an acid-decomposing ester group, (B) a compound containing one ethylenically unsaturated bond in its molecule and possessing a group capable of forming a carboxylic acid via decomposition by the action of an acid, (C) a photo-acid generator, (D) a photo-radical polymerization initiator, and optionally (E) an epoxy resin.

Abstract: A substrate coated with a coating solution is placed on a heating plate in a processing chamber in which an inert gas is circulating. The substrate is heated on the heating plate while the inert gas is circulating at an extremely small first circulating amount. The substrate is heated further on the heating plate while the inert gas is circulating at a second circulating amount larger than the first circulating amount. Detected is the density of the solvent in the processing chamber. The supply and exhaust amounts of the inert gas are controlled based on the density detected after the start of heating, so that an exhaust amount of the inert gas becomes a predetermined amount for a predetermined period until the solvent density reaches a predetermined density. A necessary control process is performed so that the solvent density reaches the predetermined density when the solvent density has not reached or exceeded the predetermined density after the predetermined period has elapsed.

Abstract: The present invention has the object of supplying an alkali-based treating liquid capable of reducing the amount used for treatment and the amount of liquid wastes produced, having an excellent solubility with respect to an exposed organic film such as a photoresist, and an equipment for supplying the same. In a developing liquid supplying equipment of the present invention, a receiving bath is connected to a development treating equipment via a line, and a pre-treating portion such as a filter, an adjusting bath and a leveling bath are sequentially provided in the following stages of the receiving bath. A liquid supplying system and a control device are connected to the adjusting bath, and the concentrations of the dissolved photoresist component and the alkali component in a used liquid can be adjusted to certain values, based on actually measured values obtained with a densitometer. The obtained regenerated liquid is supplied to the development treating equipment through a line.

Abstract: A thinner for rinsing photoresist including 50 to 80 wt. % of n-butyl acetate, propylene glycol alkyl ether, and propylene glycol alkyl ether acetate, is provided. The thinner is neither toxic to humans nor ecologically undesirable and has no unpleasant odor. The waste solutions thereof and associated waste water are easily handed so as to render this thinner environmental friendly. Additionally, the photoresist thinner of the present invention has excellent rinsing ability.

Abstract: An optical disk master having a protrusion/depression pattern on its surface is prepared by applying a photoresist layer on a substrate, exposing the photoresist layer to radiation to form a latent image of the protrusion/depression pattern, and developing the latent image. The step of treating the photoresist layer with a surfactant is included prior to the exposing step or between the exposing and developing steps. An optical disk master having a finer pattern can be prepared at a low cost while minimizing any additional burden on the manufacturing system.

Abstract: A system and method is disclosed for coating a conventional wafer or a spherical shaped semiconductor substrate with liquid material such as photoresist by utilizing a “drop on demand” piezo driven dispense nozzle, a bubble-jet dispense nozzle, or a continuous piezo jet with charging electrodes. The proposed system and method will greatly reduce, and in some cases virtually eliminate, the waste of photoresist in the process.

Abstract: Provided are a method of manufacturing a magnetoresistive device and a method of manufacturing a thin film magnetic head capable of efficiently forming a magnetoresistive device having an extremely small magnetoresistive film pattern, and capable of reducing variations in dimensions of the magnetoresistive film pattern. Further, provided is a method of forming a thin film pattern capable of efficiently forming a plurality of thin film patterns with different sizes on a same base with accuracy according to the thin film patterns. Electron beam lithography or photolithography is selectively used according to the sizes of patterns to be formed, so while the dimensional accuracy of a portion specifically requiring higher accuracy can be secured, the patterns can be efficiently formed.

Abstract: A very high reflection prevention effect can be produced for a variety of kinds of substrates, including those having transparent films and those having high reflectivity like metallic films, without posing any problem, such as aspect ratios, during the process of forming anti-reflective films This method can form fine and precise resist patterns and therefore improve the yield and reliability of devices to be manufactured. When applied to logic LSIs, this invention enables them to be manufactured at high dimensional precision and increases their operation speeds. While we have shown and described several embodiments in accordance with the present invention, it is understood that the same is not limited thereto, but is susceptible to numerous changes and modifications as is known in the art; and we therefore do not wish to be limited to the details shown and described herein, but intend to cover all such modifications as are encompassed by the scope of the appended claims.

Abstract: A method of lithography capable of optimizing its process condition more simply and precisely based on a limited number of experiments is provided. A line edge roughness of a resist pattern is obtained as a characteristic value for evaluation. The resist pattern is formed in an orthogonal experiment based on an orthogonal table that includes significant factors, which define a process condition of its lithography. Reference level (benchmark) values are set for each factor in the orthogonal experiment, from which an appropriate reference level value which minimizes the edge roughness is selected as a process condition for proceeding with the lithography.

Abstract: A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

Abstract: This patent describes a lithographic printing plate comprising on a substrate a semisolid radiation-sensitive layer capable of hardening upon exposure to a suitable radiation, and a method of imaging such a plate using laser radiation. The utilization of a semisolid radiation-sensitive layer allows faster photospeed and better curing efficiency as desired for digital laser exposure. Several plate designs can be utilized to overcome the tackiness issue associate with the semisolid layer, such as conformally coating the radiation-sensitive layer on a rough substrate and utilizing an overcoat. Plates having an ink and/or fountain solution or dispersible semisolid radiation-sensitive layer can be directly developed with ink and/or fountain solution while solution while mounted on press, with the imagewise laser exposure being carried out on press or off press.

Abstract: Disclosed is a method for producing an acid sensitive liquid composition. The method involves passing an acid sensitive liquid composition containing a carbonate represented by the formula ROC(═O)OR1 wherein R and R1 independently are a hydrocarbyl group of 1 to about 10 carbon atoms, through at least one of the following two filter sheets: (a) a filter sheet containing a self-supporting fibrous matrix having immobilized therein a particulate filter aid and a particulate ion exchange resin having an average particle size of from about 2 to about 10 microns, wherein the particulate filter aid and ion exchange resin particles are distributed substantially uniformly throughout a cross-section of said matrix; and/or (b) a filter sheet containing a self-supporting matrix of fibers having immobilized therein particulate filter aid and binder resin, and having an average pore size of about 0.05 to 0.5 &mgr;m.

Abstract: A method of manufacturing integrated circuits is performed by coating a substrate with resist, exposing the resist to light through a pattern in a mask so as to define slots in the resist corresponding to the pattern in the mask, chemically developing the resist after exposure to light, and choosing the thickness of the resist so as to achieve the desired profile of the slots defined in the resist.

Abstract: Provided is a photosensitive copper paste permitting the formation of a fine and thick copper pattern having high adhesion to a substrate, and having excellent preservation stability without causing gelation, and a method of forming a copper pattern, a circuit board and a ceramic multilayer substrate using the photosensitive copper paste. The photosensitive copper paste includes a mixture of an organic binder having an acid functional group, a copper powder and a photosensitive organic component. The copper powder has a surface layer having a thickness of at least 0.1 &mgr;m from the surface composed CuO as a main component. The copper powder also has an oxygen content of about 0.8% to 5% by weight.

Abstract: An edge bead remover for a photoresist composition disposed as a film on a surface, consisting essentially of a solvent mixture comprising from about 50 to about 80 parts by weight, based on the weight of the solvent mixture, of at least one di(C1-C3)alkyl carbonate and from about 20 to about 50 parts by weight, based on the weight of the solvent mixture, of cyclopentanone. A method is also provided for treating a photoresist composition film disposed on a surface which method comprises contacting the photoresist composition with a solvent mixture, in an amount sufficient to produce a substantially uniform film thickness of the photoresist composition across the surface, wherein the solvent mixture comprises from about 50 to about 80 parts by weight, based on the weight of the solvent mixture, of at least one di(C1-C3)alkyl carbonate and from about 20 to about 50 parts by weight, based on the weight of the solvent mixture, of cyclopentanone.

Abstract: The present invention is directed to a system and method for controlling the formation of a layer of photoresist. In one illustrative embodiment, the method comprises sensing a viscosity of the photoresist material to be applied on a process layer, providing the sensed viscosity to a controller that determines, based upon the sensed viscosity, at least one parameter of a photoresist application process used to apply the photoresist material, and applying the photoresist using an application process that is comprised of said determined parameter. In one illustrative embodiment, the system is comprised of at least one sensor for sensing the viscosity of the photoresist, a controller that receives the sensed viscosity and determines, based upon the sensed viscosity, at least one parameter of the application process used to apply the photoresist, and a tool for applying the photoresist using a process that includes the determined parameter.

Abstract: The present invention relates to a method for performing coating and developing treatment for a substrate, which comprises the steps of: supplying a coating solution to the substrate to form a coating film on the substrate; performing heat treatment for the substrate on which the coating film is formed; cooling the substrate after the heat treatment; performing exposure processing for the coating film formed on the substrate; and developing the substrate after the exposure processing, and further comprises the step of supplying a treatment gas to form a treatment film on a surface of the coating film after the step of forming the coating film and before the step of performing the exposure processing for the substrate.

Abstract: A photoresist compound achieves a uniform volume growth in a chemical expansion reaction on a chemically expandable photomask during a method for structuring a layer of the photoresist compound. The photoresist compound comprises a film-forming polymer having molecular groups that can be converted into alkali-soluble groups through acid-catalyzed separation reactions, and reactive molecular groups that can react with an expansion component so as to form a chemical bond. In addition, the photoresist compound comprises a photoacid generator that releases an acid upon exposure with radiation from a suitable wavelength range, and a thermoacid generator that releases an acid when supplied with sufficient thermal energy.

Abstract: A chemically amplified positive resist composition comprising a base resin and a compound containing two to six functional groups, specifically alkenyloxy, acetal and ortho-ester groups in the molecule is suitable for forming a contact hole pattern by the thermal flow process.

Abstract: A chemical amplification photoresist monomer, a photoresist polymer prepared thereof, and a photoresist composition using the polymer. More specifically, a chemical amplification photoresist polymer comprising a fluorine-containing monomer represented by Chemical Formula 1, and a composition comprising the polymer.

Abstract: A process of drying a cast film polymeric disposed upon a workpiece. In this process a cast polymeric film, which includes a volatile organic compound therein, disposed on a workpiece, is contacted with an extraction agent which may be liquid carbon dioxide or supercritical carbon dioxide.

Abstract: (Meth)acrylate compounds having a norbornane, bicyclo[2.2.2]octane, 7-oxanorbornane or cyclohexane ring structure and a &ggr;-butyrolactone ring structure connected together by a suitable linker are novel and useful in forming polymers having high transparency, especially at the exposure wavelength of an excimer laser.

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device.

Abstract: A photosensitive printing element is used for preparing flexographic printing plates. The photosensitive printing element comprises (a) a flexible support, (b) a photopolymerizable layer comprising an elastomeric composition sensitive to non-infrared actinic radiation, said layer being soluble, swellable or dispersible in a liquid developer prior to exposure to said non-infrared actinic radiation,and (c) at least one layer comprising an infrared radiation sensitive thermographic material which provides excellent image density (e.g., greater than 3.0) at least in the electromagnetic region of said non-infrared radiation sensitivity and preferably in both the visible and ultraviolet regions of the electromagnetic spectrum upon exposure to infrared laser radiation and thermal development. The mask may be on top of the elastomeric composition or underneath the elastomeric composition (where the flexible support is transparent).

Abstract: Disclosed is a method for producing an acid sensitive liquid composition. The method involves passing an acid sensitive liquid composition containing a carbonate represented by the formula ROC(=O)OR1 wherein R and R1 independently are a hydrocarbyl group of 1 to about 10 carbon atoms, through at least one of the following two filter sheets: (a) a filter sheet containing a self-supporting fibrous matrix having immobilized therein a particulate filter aid and a particulate ion exchange resin having an average particle size of from about 2 to about 10 microns, wherein the particulate filter aid and ion exchange resin particles are distributed substantially uniformly throughout a cross-section of said matrix; and/or (b) a filter sheet containing a self-supporting matrix of fibers having immobilized therein particulate filter aid and binder resin, and having an average pore size of about 0.05 to 0.5 &mgr;m.

Abstract: A substrate coated with a coating solution, for example, a resist solution is heated at a predetermined temperature, thereafter putted in a non-heated state, and then heated at a second predetermined temperature. Alternatively, a heating process in which a substrate coated with a resist solution is heated and a non-heated process in which the substrate is putted in a non-heated state are repeated a plurality of times. The adoption of the above treating methods can prevent the occurrence of transfer which is an index of ununiformity of film thickness of a resist solution and the like and change in line width of a circuit pattern, thus improving yield in substrate treatment.

Abstract: A method for fabricating a structure on a substrate with a low contrast photoresist having a height greater than 15 microns is provided. A uniformly thick film of photoresist is achieved on a substrate by spinning the substrate at two different speeds, then at least partially, but not fully drying the layer of photoresist at ambient temperature. The layer of photoresist is then dried and hardened by applying heat to the bottom surface of the substrate via a hot plate. The substrate is maintained level at all times during the spinning and drying steps in order to prevent wedging of the photoresist which remains in a plastic state until fully hardened by the hot plate. A surface relief pattern is then created in the photoresist via a scanning beam of electromagnetic radiation, which is preferably a laser beam. The resulting exposed surface relief patterns are then developed to produce the desired structure, which has a height of 15 microns or greater.

Abstract: A method to self-align a lithographic pattern to a workpiece, the method including the steps of obtaining a workpiece having a predetermined pattern of features; modifying at least some of the features so that when a photoresist material is applied to the pattern, there is a substantial difference in reflectivity between two adjacent features, at least one of which has been modified; applying a photoresist material; masklessly exposing the photoresist material; developing the photoresist material, the substantial difference in reflectivity of the two adjacent features causing the developed photoresist material to reveal one adjacent feature but not the other.

Abstract: A method of reworking a photoresist layer. A silicon chip having an insulation layer, a bottom anti-reflection coating and a photoresist layer thereon is provided. The photoresist layer has already been light-exposed and developed. A wet etching operation is carried out to remove a large portion of the photoresist layer. A low-temperature plasma treatment incapable of transforming the anti-reflection coating structure is conducted to remove the hardened residual photoresist material. A new photoresist layer is formed over the bottom anti-reflection coating.

Abstract: The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer.

Abstract: A film forming method for obtaining a resist film of a uniform thickness on a substrate includes the steps of treating the surface of the substrate is treated with a HMDS (hexamethyldisilazane) process, then a pre-wetting process is conducted, and a resist liquid is applied just after the pre-wetting process is competed. In the pre-wetting process, a solvent is used which is capable of dissolving the resist liquid, and preferably the same solvent as used in the resist liquid. The application of both the resist liquid and the pre-wet liquid are conducted by rotating the substrate by means of a spinner after the liquid is dripped at the center of the substrate. It is preferable that the application of the resist liquid is contiguous to the application of the pre-wet liquid as much as possible. After the application of the resist liquid is completed, the substrate is put on a hot plate, a baking process is conducted, and a resist film is formed.

Abstract: A process is provided for creating microstructure coupling guides for aligning photonic devices with optical signal carrying apparatuses. The process includes applying a photoresist to a semiconductor material, spinning the semiconductor material, baking the semiconductor material, exposing the photoresist, baking the semiconductor material a second time, and developing the resist. The process creates a microstructure that acts as an integral guide to align and maintain the relative position between an optical signal carrying apparatus and a photonic device.

Abstract: Antihalation compositions and methods for reducing the reflection of exposure radiation of a photoresist overcoated said compositions. The antihalation compositions of the invention comprise a resin binder and material capable of causing a thermally induced crosslinking reaction of the resin binder.

Abstract: Elastomer thin films can be lithographically patterned by using an UV curable polydimethylsiloxane, rather than replica molding of thermal cure elastomers. The fabrication method of such patterned elastomers consists of elastomer formulation, substrate modification, spinning elastomer, pattern development, and possible a backside etch of the substrate.

Abstract: A novel polymer is obtained by copolymerizing a (meth)acrylic acid derivative with a vinyl ether compound, an allyl ether compound and an oxygen-containing alicyclic olefin compound. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.

Abstract: In a process for manufacturing integrated circuit elements or the like by photolithography, a method for reducing detrimental influence on resist shape due to properties of a substrate or acidity of substrate surface in case where a chemically amplified resist or the like is used as a photoresist, and a substrate-treating agent composition to be used for this method are described. The substrate-treating agent composition comprises a solution containing a salt between at least one basic compound selected from among primary, secondary and tertiary amines and nitrogen-containing heterocyclic compounds and an organic acid such as a sulfonic acid or a carboxylic acid. This composition is coated on a substrate surface having thereon a bottom anti-reflective coating such as SiON layer, baked and, if necessary washed, then a chemically amplified resist is coated on the thus-treated substrate, exposed and developed to form a resist pattern on the substrate.

Abstract: Disclosed are methods for forming a resist pattern which solve a problem caused by halation and interference phenomena due to reflected light from the substrate. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper interference film for the exposure light and a lower film having higher exposure light absorbance than the upper film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower film that reflects exposure light and an upper film that is an interference film for the exposure light.

Abstract: A process for producing an ink jet head having an ink pathway communicating with a discharging outlet and an energy generating element for generating energy utilized for discharging ink.

Abstract: The present invention provides polymers which are substantially or completely free of inorganic contaminants and the use of such polymers as a resin component for photoresist compositions, particularly chemically-amplified positive-acting resists. Polymers of the invention also are suitable for use as a resin component for antireflective coating compositions (ARCs). More particularly, the invention provides methods for reducing such contaminants in polymerization initiators, particularly free radical initiators.

Abstract: Provided are a PED-stabilizer-containing resist material having high sensitivity and high resolution, and sufficient PED stability; and a pattern forming method using the resist material. More specifically, the resist material contains at least one compound selected from thiol derivatives, disulfide derivatives and thiolsulfonate derivatives. This resist material may further contain a dissolution inhibitor and/or surfactant. The pattern forming method comprises steps of applying the resist material to a substrate; after a heat treatment, exposing the substrate to a high energy beam or electron beam through a photomask; and after an optional heat treatment, developing the resist material with a developer.

Abstract: An object of the present invention is to provide a polymer which has excellent reactivity, rigidity and adhesion to the substrate, and undergoes a low degree of swelling during development, a resist material which uses this polymer as the base resin and hence exhibits much higher resolving power and etching resistance than conventional resist materials, and a pattern formation method using this resist material. Specifically, the present invention provides a novel polymer containing repeating units represented by the following general formula (1-1) or (1-2) and having a weight-average molecular weight of 1,000 to 500,000, a resist material using the polymer as a base resin, and a pattern formation method using the resist material.

Abstract: A substrate coated with a coating solution, for example, a resist solution is heated at a predetermined temperature, thereafter putted in a non-heated state, and then heated at a second predetermined temperature. Alternatively, a heating process in which a substrate coated with a resist solution is heated and a non-heated process in which the substrate is putted in a non-heated state are repeated a plurality of times. The adoption of the above treating methods can prevent the occurrence of transfer which is an index of ununiformity of film thickness of a resist solution and the like and change in line width of a circuit pattern, thus improving yield in substrate treatment.

Abstract: An imageable element comprises: (A) a substrate; and (B) an imageable composition applied to the substrate comprising: (1) a first layer, comprising: (a) a photosensitive composition capable of absorbing actinic radiation; and (b) a photothermal converter; and (2) an ablatable second layer contiguous to the first layer, wherein the second layer is opaque to the actinic radiation. This imageable element advantageously is useful in both positive and negative working printing plate applications, increases the efficiency of use of mask-generating radiation such as IR radiation and eliminates the need for chemicals and additional time to create a mask.