Abstract: This invention provides a pattern formation material for electron beam lithography, which contains an alkali-soluble resin, a photoacid generator, and dissolution inhibiting groups, and also provides a pattern formation method and exposure mask fabrication method using the material. As the dissolution inhibiting groups, this invention uses a first dissolution inhibiting group which increases the sensitivity of the pattern formation material when the material is left to stand in a vacuum after an electron beam irradiation, and a second dissolution inhibiting group which decreases the sensitivity under the same condition. In this invention, the ratio of the first dissolution inhibiting group to the second dissolution inhibiting group is so adjusted that the size of an alkali-soluble portion, which is made soluble in an alkali solution by an electron beam irradiation, is substantially held constant independently of the standing time in a vacuum.

Abstract: The invention relates generally to photolithographic techniques, and particularly, but not by way of limitation, to a method for preventing the collapse of the image pattern during the stage of drying the image. The invention also relates to structures fabricated using the inventive method.

Abstract: A process is described for trimming photoresist patterns during the fabrication of integrated circuits for semiconductor devices and MEMS devices. A combination of a low temperature (<20° C.), high density oxygen and argon plasma and intense UV radiation is used to simultaneously trim and harden a photoresist linewidth in an ICP chamber. As an alternative, a UV hardening step can be performed in a flood exposure tool prior to the ICP plasma etch. Another option is to perform the argon plasma treatment first to harden the resist and then in a second step apply an oxygen plasma to trim the photoresist. Vertical and horizontal etch rates are decreased in a controllable manner which is useful for producing gate lengths in MOS transistors of less than 100 nm. The process can also be used to controllably increase a space width in a photoresist feature.

Abstract: A method of removing photoresist material from a semiconductor substrate includes providing a semiconductor substrate having a patterned photoresist mask. A layer comprised of polymer material is formed over the patterned photoresist mask. The layer comprised of polymer material and a portion of the patterned photoresist mask are then removed. The layer comprised of polymer material is preferably formed by introducing a process gas into a plasma environment and is preferably formed with less thickness in a low aspect ratio area relative to a high aspect ratio area.

Abstract: A resist removal method and device therefor are provided that are excellent from the point of view of washing costs and environmental preservation and that also offer extremely high removal performance, and this method of resist removal using functional water according to the present invention includes the following steps:

Abstract: A stable concentrate and method to reduce or prevent residue and scum formation on a substrate. The stable concentrate has an alkaline component in combination with another compound in a sufficient amount to reduce or prevent the formation of residue and scum on a substrate. The stable concentrate may be employed in developing processes in the manufacturing of printed wiring boards.

Abstract: The present invention provides a method for avoiding particulate contamination of a semiconductor wafer in a stripping bath and a stripping system for implementing the method. The method includes providing at least one semiconductor wafer vertically oriented in a wafer containing fixture; providing a solution bath for removing particulate material from a semiconductor wafer surface; immersing the wafer containing fixture in the solution bath positioned over a movable member having a contact surface such that upon moving the movable member in a vertical direction the contact surface contacts a portion of the edge of the at least one semiconductor; and moving the movable member such that the at least one semiconductor wafer is projected upward from a resting position in the wafer containing fixture.

Abstract: A process for chemically amplifying structured resists includes applying a chemically amplified resist to a substrate and structuring it in a customary manner. Preferably, the amplification agent is applied in the aqueous phase to the structured resist and, after chemical amplification is complete, excess agent is removed by an aqueous wash medium. By using water as a solvent for the amplification agent and as a wash medium, it is possible to avoid organic solvents that constitute an explosion hazard. Furthermore, removal of partially exposed resist sections is suppressed.

Abstract: A photoimageable, aqueous acid soluble polyimide polymer comprising an anhydride, including a substituted benzophenone nucleus, a diamine reacted with the anhydride to form a photosensitive polymer intermediate, and at least 60 Mole % of solubilizing amine reacted with the photosensitive polymer intermediate to form the photoimageable, aqueous acid soluble polyimide polymer. An emulsion for electrophoretic deposition of a coating of a photoimageable, aqueous acid soluble polyimide polymer comprises a dispersed phase, including the photoimageable aqueous acid soluble polyimide polymer, dissolved in an organic solvent and a dispersion phase including a coalescence promoter and water. The emulsion may be applied, by electrophoretic deposition, to a conductive structure to provide a photoimageable coating on the conductive structure.

Abstract: A method including forming a photoimageable material on a substrate; developing the photoimageable material over an opening area, the photoimageable material over a first portion of the opening area developed to a first extent and the photoimageable material over a second portion of the opening area developed to a different second extent; removing developed photoimageable material from the opening area; and forming an opening in the substrate in the opening area.

Abstract: A resist stripping agent comprising a specific alkanolamine having at least one functional group represented by the following formula (I): wherein R1 and R2 are each hydrogen atom, C1-C8 alkyl or C1-C8 alkenyl. The resist stripping agent easily and efficiently removes resist films and resist residues remaining after etching or after ashing subsequent to etching in manufacturing semiconductor devices at low temperatures in short period of time. The resist stripping agent is resistant to corrosion against materials for substrate, circuits and insulating films.

Abstract: A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane (HMDS) and chlorotrimethylsilane (TMCS) and combinations thereof. The silicon oxide-based low-k material, in accordance with embodiments of the invention, is maintained at temperatures in a range of 40 to 200 degrees Celsius, and preferably at a temperature of about 150 degrees Celsius, and at pressures in a range of 1,070 to 9,000 psi, and preferably at a pressure of about 3,000 psi, while being exposed to the supercritical passivating solution. In accordance with further embodiments of the invention, a silicon oxide-based low-k material is simultaneously cleaned and passivated using a supercritical carbon dioxide cleaning solution.

Abstract: A method utilizing gray-tone exposure of a class of thick negative photo-sensitized epoxy resists from the substrate side of a transparent substrate and development methods that rely upon a physical distinction between polymerized (solid) and unpolymerized (liquid) photoresist at elevated temperatures may be used to fabricate 3-D structures in the photo-sensitized epoxy. Such structures may exhibit smoothly-varying topographic features with thicknesses as great as 2 mm.

Abstract: The present invention provides a method of producing a compound semiconductor device having a lift-off process. The lift-off process includes a step of forming a resist mask having an electrode opening on an active layer of a compound semiconductor formed on a substrate of a compound semiconductor; a step of forming a metal layer on the resist mask and the active layer in the electrode opening; and a releasing step of dissolving the resist mask and removing the metal layer formed on the resist mask to leave the metal layer on the active layer in the electrode opening as an electrode. In the releasing step, the resist mask is removed sufficiently by using a resist remover essentially consisting one or more compounds selected from a group consisting of an amine-including compound and nitrogen-including cyclic compounds so that the residual resist mask need not be removed by ashing.

Abstract: In a method of producing a photomask blank, comprising a thin film forming step of forming, on a rectangular substrate, a thin film for causing an optical change in exposure light, a resist application step of applying a positive resist on the thin film, a baking step of heat treating the resist applied on the thin film, and a removing step of removing a resist film formed in a portion of the edge of the substrate, the removing step is carried out by exposing the resist film in the portion of the edge of the substrate after the resist application step and before the heat treating step so that, upon development subsequently carried out in the removing step, a difference in solubility or dissolving speed in a developer is obtained between an exposed area and an unexposed area and by selectively supplying the developer to the exposed area.

Abstract: A method of forming a resist pattern effectively controls the manner/style and the amount of modification of a resist pattern in its reflowing process, realizing a desired resist pattern with a desired accuracy even if the deformation amount of the resist pattern is increased in the reflowing process. A second layer is formed on a first layer and then, a first resist pattern is formed on the second layer. The second layer is selectively etched using the first resist pattern as a mask. Thereafter, wettability of at least part of an exposed area of the second or first layer from the first resist pattern is adjusted, thereby forming a wettability-adjusted part. The first resist pattern is modified in such a way as to extend to the wettability-adjusted area by reflowing the first resist pattern using an organic solvent, thereby forming a second resist pattern for selectively etching the first layer or the second layer.

Abstract: A method of forming an etch mask includes patterning a top surface of a photoresist layer, carbonizing the patterned top surface of the photoresist layer and selectively removing portions of the photoresist layer. Portions of the photoresist layer under the carbonized areas remain. A substrate or a layer above substrate can be etched or processed in accordance with the mask formed from the photoresist layer.

Abstract: A semi-aqueous cleaning formulation useful for removing particles from semiconductor wafer substrates formed during a dry etching process for semiconductor devices, the cleaning formulation comprising a buffering system a polar organic solvent, and a fluoride source.

Abstract: Contaminant removal from a substrate can be performed using a supercritical fluid. An apparatus can be configured to operate at conditions that take advantage of higher solubility of a contaminant in its supercritical state compared to its liquid state. The substrate can be exposed to a supercritical fluid in a chamber to remove at least some of the contaminant. Outside the chamber, the supercritical fluid can be cooled to its corresponding liquid state, in which lower solubility of the contaminant may allow the contaminant to separate into a different phase from the liquid phase of the supercritical fluid. Such contaminant removal can be highly advantageous to substrates that withstand only limited amounts of physical or mechanical stress or heat. The contaminant removal can also be used where geometries virtually prevent removal by physical or mechanical means.

Abstract: The present invention provides a system and process for controlling the application of patterned resist coatings in an integrated circuit manufacturing process that employs multiple reticle patterns. One aspect of the invention relates to obtaining scatterometry measurements from a patterned resist and using the measurements to determine whether the correct reticle pattern was employed in forming the patterned resist. According to another aspect of the invention, the reticles are provided with grating patterns in addition to reticle patterns, whereby when the reticles are printed, gratings are formed in the resist. The gratings can be used, with scatterometry, to identify the reticle pattern. The reticles can be configured so that the gratings form in a non-functional portion of a wafer, such as a portion along a score line. Where it is, determined that the correct reticle pattern was not used, corrective action can be taken such as stripping the resist and reprocessing the affected wafers.

Abstract: A method of removing exposed resist, including the steps of applying a first layer of developer to the surface of the resist for a first period of time, substantially removing said first layer of developer from the surface of the resist, and applying a second layer of developer to the surface of the resist for a second period of time. The method further includes the step of substantially removing said second layer of developer, and applying at least a third layer of developer to the surface of the resist for a third period of time.

Abstract: A thinner composition is effective in removing a variety of photoresists, and includes propylene glycol mono-methyl ether acetate, ethyl 3-ethoxy propionate and at least one of &ggr;-butyro lactone and propylene glycol mono-methyl ether. The thinner composition can selectively strip a photoresist coated on a backside and at an edge portion of a substrate, as well as a photoresist coated on a whole front surface of the substrate.

Abstract: A method for integrating copper with an MIM capacitor during the formation the MIM capacitor. The MIM capacitor is generally formed upon a substrate and at least one copper layer is deposited upon the substrate and layers thereof to form at least one metal layer from which the MIM capacitor is formed, such that the MIM capacitor may be adapted for use with an embedded DRAM device. The MIM capacitor comprises a low-temperature MIM capacitor. At least one DRAM crown photo layer may be formed upon the substrate and layers thereof to form the MIM capacitor. The number of additional lithographic steps required in BEOL manufacturing operations is thus only one, while the capacitance of the MIM capacitor can be improved greatly because the sequential process of the DRAM crown photo patterning steps may be altered.

Abstract: The invention provides a photoresist stripping composition including (a) an alkanolamine other than those alkanolamines falling under the definition of the below-described component (b); (b) an alkanolamine having in the molecule thereof at least one moiety represented by the following formula (1): 1

Abstract: The object of the present invention is to provide, in the production of semiconductor circuit elements, a photoresist residue removing liquid composition which is excellent for removing photoresist residues after dry etching without attacking the wiring material or the interlayer insulating film etc.

Abstract: Disclosed herein is a photoresist stripping solution comprising (a) a nitrogen-containing organic hydroxyl compound, (b) a water soluble organic solvent, (c) water, and (d) a specific benzotriazole compound, and a method of stripping photoresists using the same. According to the invention, there are provided a photoresist stripping solution, which is particularly suitable for SiO2 substrates utilized in liquid-crystal panel devices, and is excellent not only in preventing substrates from corrosion having metallic conductor patterns, particularly copper (Cu) conductor patterns, formed thereon, or substrates having metallic conductor patterns and overlying inorganic material layers formed thereon, but also in stripping photoresist layers as well as modified photoresist films, and a method for removing a photoresist using said stripping solution.

Abstract: A redistribution process is described. A wafer is provided, wherein a first titanium layer, a first copper layer and a second titanium are sequentially formed over the surface of the wafer. The second titanium layer, the first copper layer and the first titanium layer are then defined to form a patterned trace layer. A patterned benzocyclobutene layer is then formed to expose the second titanium layer. The exposed second titanium layer is further removed to expose the first copper layer. Thereafter, a plurality of contacts is formed over the patterned benzocyclobutene layer and to connect with the first copper layer. Further, the wafer comprises a plurality of bonding pads, wherein each bonding pad is connected with each contact through the patterned trace layer.

Abstract: A process for etching a PPMS layer that increases the etch selectivity of PPMS relative to PPMSO from an initial low etch selectivity to a higher etch selectivity at a later stage of the etching process. In some embodiments, the etch selectivity used during a first etching step of the process is less than 4:1 and the etch selectivity used during a second etching step, subsequent to the first step, is greater than 5:1. In some other embodiments, the etch selectivity of the first step is between 2-3:1 and the etch selectivity of the second step is greater than 8:1. Optionally, in still other embodiments a third etching step, performed between the first and second etching steps may be employed where the etch selectivity is between 3-8:1.

Abstract: A photoresist stripper composition is made up of a mixture of an acetic acid ester, &ggr;-butyrolactone (GBL), and a non-acetate ester or a poly alkyl alcohol derivative. The acetic acid ester may be at least one of n-butyl acetate, amyl acetate, ethyl aceto-acetate, and isopropyl acetate. The non-acetate ester may be at least one of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP) and methyl-3-methoxy (MMP). The poly alkyl alcohol derivative may be at least one of propylene glycol monomethyl ester (PGME) and propylene glycol monomethyl ester acetate (PGMEA).

Abstract: The present invention is directed toward effective photoresist stripping compositions that are less corrosive and do not cause skin irritation. One form of the present invention is a composition useful as a photoresist remover that includes an alkylene carbonate, and one or more additional components chosen from the group that includes alkyl hydrogen peroxides, hydroxyalkyl ureas, urea-hydrogen peroxides, N-substituted morpholines and alcohols. Another form of the present invention is a composition for removing photoresist from a surface that includes an N-substituted morpholine.

Abstract: A method of metal etching post cleaning. A substrate with a surface covered by a patterned metal layer and a patterned resist layer in order is provided, subsequently, oxygen-plasma ashing is performed to remove the patterned resist layer to expose the surface of the patterned metal layer. Next, an ozone-plasma ashing is performed to release charges on the surface of the patterned metal layer, the ozone-plasma ashing time at 30 sec˜180 sec, and the ozone-plasma ashing temperature at 200° C.˜300° C. The surface of the patterned metal layer is finally cleaned with sulfuric peroxide, molar concentration of sulfuric acid and hydrogen peroxide therein being 0.07M˜0.4M and 0.8M˜1.5M, respectively. In addition, the temperature of the sulfuric peroxide during post cleaning is 25° C.˜50° C.

Abstract: A photoresist stripper composition is made up of a mixture of an acetic acid ester, &ggr;-butyrolactone (GBL), and a non-acetate ester or a poly alkyl alcohol derivative. The acetic acid ester may be at least one of n-butyl acetate, amyl acetate, ethyl aceto-acetate, and isopropyl acetate. The non-acetate ester may be at least one of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP) and methyl-3-methoxy (MMP). The poly alkyl alcohol derivative may be at least one of propylene glycol monomethyl ester (PGME) and propylene glycol monomethyl ester acetate (PGMEA).

Abstract: A method comprising introducing a photoimageable material on a substrate; developing the photoimageable material over an opening area, the photoimageable material over a first portion of the opening area developed to a first extent and the photoimageable material over a second portion of the opening area developed to a different second extent; removing developed photoimageable material from the opening area; and forming an opening in the substrate in the opening area.

Abstract: A photoresist remover composition including: 10 to 30% by weight amine compound; 20 to 60% by weight glycol series solvent; 20 to 60% by weight polar solvent; and 0.01 to 3% by weight perfluoroalkylethyleneoxide. The performance of the photoresist remover composition in stripping the photoresist residue, which is generated by dry or wet etching, ashing or ion implantation, from a substrate is enhance, and the photoresist remover composition is able to be smoothly applied over a variety of metal layers including an aluminum (Al) layer. Also, the photoresist remover composition corrodes the metal layers very little.

Abstract: Positive-working thermally imageable elements, useful as printing plate precursors and having reduced ablation when thermally imaged, and methods for their preparation are disclosed. In one aspect, the elements contain a hydrophilic substrate, an underlayer, a barrier layer, and a top layer. The underlayer comprises a photothermal conversion material.

Abstract: A method and an apparatus for removing an organic film such as a resist film from a substrate surface are provided. These are very safe even at high temperatures, and use a treatment liquid which can be recycled and reused. A treatment liquid typically formed from liquid ethylene carbonate, propylene carbonate, or a liquid mixture of these two compounds, and in particular such a treatment liquid containing dissolved ozone, is contacted with a substrate with an organic film, and the organic film is removed.

Abstract: A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.

Abstract: A photoresist stripping solution comprising (a) a carboxyl group-containing acidic compound, (b) at least one basic compound (for example, monoethanolamine, tetraalkylammonium) selected from among alkanolamines and specific quaternary ammonium hydroxides, (c) a sulfur-containing corrosion inhibitor and (d) water, and having a pH value of 3.5-5.5; and a method of stripping photoresists using the same are disclosed. The present invention provides a photoresist stripping solution which is excellent in the effect of protecting metal wirings (in particular, Cu wirings) from corrosion, never damages interlevel films, such as low dielectric layers or organic SOG layers, and shows excellent strippability of photoresist films and post-ashing residues.

Abstract: A variable data lithographic printing device comprises surrounding a printing cylinder a photosensitive layer coater, an exposure source, optionally a developer, an inking applicator, optionally a transfer system, and optionally an eraser. During printing operation, each surface areas of the rotating cylinder continuously undergo the cycle of coating, imagewise exposure, optionally developing, inking, printing of inked imaging to the receiving medium, and optionally erasing processes. The developing means can be omitted if an ink and/or fountain solution developable photosensitive layer is used. In an alternative design, the cylinder is replaced with a continuous supply of a ribbon with lithographic substrate surface. In another alternative design, the cylinder and the coater are replaced with a continuous supply of a pre-sensitized ribbon comprising on a substrate a photosensitive layer.

Abstract: A method of forming a patterned layer on a substrate including depositing a notched or undercut resist pattern to define at least one recess in the photoresist, with the notch or undercut circumjacent the base of the recess, sputtering a material into the recess and removing the resist and the material deposited on the resist characterised in that the aspect ratio of the recess and height of the mouth of the notch or undercut are such that the notch or undercut lies substantially in the shadow beneath the resist, the layer deposited upon it and the layer at the base of the recess in respect of any sputtered particle travelling in a straight line through the mouth of the recess such that material deposited on the walls of the recesses is not continuous with material deposited on the base of the recess.

Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.

Abstract: A method for improving the resolution of optic lithographic is disclosed. The method includes a step of forming an etched layer on the substrate, an inorganic photoresist layer is spun-on the etched layer, and an atomic layer on the inorganic photoresist layer. Then, a deep ultraviolet light is illuminated to the inorganic photoresist layer such that the acid molecular is formed from inorganic photoresist layer. Next, the atomic layer is catalyzed by acid molecular and converted to metallic oxide by active oxygen atom. After oxidation, the oxide pattern can be obtained and it is easy by etching process.

Abstract: A stripping and cleaning composition for the removal of residue from metal and dielectric surfaces in the manufacture of semi-conductors and microcircuits. The composition is an aqueous system including organic polar solvents including corrosive inhibitor component from a select group of aromatic carboxylic acids used in effective inhibiting amounts. A method in accordance with this invention for the removal of residues from metal and dielectric surfaces comprises the steps of contacting the metal or dielectric surface with the above inhibited compositions for a time sufficient to remove the residues.

Abstract: A develop process for reduced cycle time and reduced defects in the develop process for semiconductor/IC fabrication is shown. The use of a linear slit scan nozzle provides even distribution of a layer of develop material within an acceptable thickness and uniformity range such that a pre-wet step is not needed to spread the develop material evenly over the surface of a wafer. The use of a whip operation prior to rinsing with DI water significantly reduces develop defects.

Abstract: A UV absorbent represented by the following formula (1) [R1 represents an alkenyl group, all of R1 represent the same group, and R2, R3 and R4 independently represent a hydrogen atom, an alkyl group, an alkoxy group, or a halogen atom], a method of preparing the UV absorbent due to a reaction of a compound represented by the following formula (2) and an alkenylating agent represented by the following formula (3) in the presence of a base [R2, R3 and R4 independently represent a hydrogen atom, an alkyl group, an alkoxy group, or a halogen atom, and X represents a halogen atom, —OSO2R5 or —OSO2OR1, and R5represents an alkyl group or an aryl group], a composition containing therein the UV absorbent, and an image forming method using the composition: 1

Abstract: In this invention, resist patterns formed by development are dried using a supercritical fluid such that no moisture enters the patterns.

Abstract: A method of manufacturing a selectively relief-treated image member comprises:

Abstract: A two step passivation procedure, used to remove chlorine from polymer layers formed on the sides of metal structures, prior to removal of the defining photoresist shape, and of the polymer layers, has been developed. The procedure features a first passivation step, performed at a low substrate temperature, (100-140° C.) at low RF power, (150 to 250 watts), and using a 2 to 1 ratio of oxygen to water, resulting in removal of corrosion causing chlorine, from the polymer layers, located on the sides of a first group of defined metal structures, which in turn reside at the edge of a semiconductor substrate. A second passivation step, of the two step passivation procedure, is then performed using water only, at higher substrate temperature, (200-250° C.), resulting in removal of chlorine from polymer layers located on the sides of a second set of metal structures, which reside at the center of the semiconductor substrate.

Abstract: A method for in-situ removal of unwanted coating layers from a wafer surface by utilizing a magnetic field enhanced plasma is disclosed. The unwanted coating layers may include, but are not limited to, photoresist coating layers and sidewall passivation polymer layers. The magnetic field can be generated at a flux density between about 10 gauss and about 100 gauss. The wafer surface is exposed to the magnetic field enhanced plasma ions for a time period until substantially all the unwanted coating layers are removed, i.e., in a time period between about 1/2 minute and about 10 minutes. An oxygen plasma is used for demonstrating the method.

Abstract: A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.