Abstract: The invention relates to an alkaline developer for irradiated radiation sensitive compositions, which developer is based on water and at least one inorganic salt having an alkaline reaction, wherein the developer has a pH of at least 11 and comprises at least three structurally different surfactants of formulae (A), (B) and (C), characterised in that the surfactant of formula (A) has one anionic group, the surfactant of formula (B) has two anionic groups, the surfactant of formula (C) is non-ionic and has at least one non-ionic hydrophilic group, and the concentration of each of the surfactants of formulae (A), (B) and (C) in the developer is at least 0.05 weight-% based on the total weight of the developer. The developer leads to less depositions and has a superior stability when used.

Abstract: There is disclosed a polymer containing at least a repeating unit represented by the following general formula (1), and the resist composition containing the polymer as a base resin, especially a chemically amplified resist composition.

Abstract: Compositions containing certain organic solvents and a fluorine source are capable of removing photoresist and etching residue.

Abstract: There is provided a developer agent for a positive type photosensitive compound having a near infrared wave length region laser sensitive characteristic in which a photosensitive portion of the compound exposed and reacted with a laser of the near infrared wavelength region is enabled to be dissolved in the developer liquid. This developer agent contains a) water; b) either one of or two kinds or more of tetramethyl ammonium hydroxide, benzyl triethyl ammonium hydroxide, ortho silicate soda, etc., applied as either organic or non-organic alkali capable of becoming a major material; and c) potassium pyrophosphate, tripolyphosphate soda, etc., applied as liquid agent having dampening action for preventing a reduction in pH value.

Abstract: An alkaline developing solution for development of a heat-sensitive presensitized plate of positive-working mode for use in making a lithographic printing plate, which developing solution comprises a linear-type alkyleneoxide adduct and a branched-type alkyleneoxide adduct; a method for preparing a lithographic printing plate comprising the steps of light-exposing to infrared radiation, a heat-sensitive presensitized plate of positive-working mode for use in making a lithographic printing plate, said presensitized plate having an image recording layer which comprises an IR-absorbing dye on a substrate, and developing the light-exposed plate with the above alkaline developing solution.

Abstract: The present subject matter relates to a method of stripping a photoresist after the photoresist film has been subjected to a high dose and high energy ion implant process. The method involves soaking the photoresist film in DI water, dry etching with oxygen plasma, and immersing in Caro's acid solution to improve the throughput of removing the film from the underlying substrate. The method can also be used to strip photoresist that has been hardened or altered by other types of processes such as dry etch transfer steps and chemical treatments. In some applications, the dry etching step may be omitted from the stripping process or the dry etching step may be combined with the water soak in an integrated process.

Abstract: A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C., and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.

Abstract: A developer comprising at least one carbonate, at least one hydrogen carbonate and at least one alkali silicate, wherein the ratio of the total molar concentration “a” of the carbonate and the hydrogen carbonate to the molar concentration “b” of the SiO2 component present in the alkali silicate: “a/b” ranges from 1:0.3 to 1:2, the total molar concentration of “a” and “b”: “a+b” ranges from 0.1 to 2 mole/L, and the pH value thereof ranges from 9 to 13; and an image-forming method which comprises the steps of imagewise exposing a negative-working image-forming material which comprises a substrate provided thereon with an image-recording layer comprising an infrared light absorber, a polymerization initiator, an ethylenically unsaturated bond-containing monomer and a polymer binder, and then developing the imagewise exposed image-forming material with the foregoing developer.

Abstract: Disclosed are an organic anti-reflective coating composition which is introduced to top portion of a photoresist and a pattern forming method using the same, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source, and more particularly to, an organic anti-reflective coating composition which can protect photoresist from atmospheric amine to minimize a post exposure delay effect, and minimize pattern distortion caused by diffused reflection, i.e., a swing phenomenon, with the improvement of a notching phenomenon and the reduction of reflection rate, and a patterning forming method using the same.

Abstract: A method for forming imprint lithography templates is described herein. The method includes forming a masking layer and a conductive layer on a substrate surface. The use of a conductive layer allows patterning of the masking layer using electron beam pattern generators. The substrate is etched using the patterned masking layer to produce a template.

Abstract: The present invention provides a method for forming images comprising the steps of imagewise exposing a negative-working image-forming material which comprises a substrate provided thereon with an image-recording layer comprising a photopolymerization initiator system sensitive to light rays whose wavelength falls within the visible to ultraviolet ranges, a polymerizable compound carrying at least one ethylenically unsaturated group and a binder polymer and then developing the imagewise exposed image-forming material with a developer which contains at least one carbonate, at least one hydrogen carbonate and at least one alkali silicate and which has a pH value ranging from 9 to 13.0, wherein the ratio of the total molar number a of the carbonate and the hydrogen carbonate to the molar number b of the SiO2 component present in the alkali silicate: a/b ranges from 1:0.3 to 1:2 and the total molar number of these components: a+b ranges from 0.1 to 2 mole/L.

Abstract: The present invention relates to a method for forming images which comprises imagewise exposing a photopolymerizable image-forming material comprising a substrate provided thereon with an image-recording layer which comprises a specific photopolymerization initiator system, a polymerizable compound carrying at least one ethylenically unsaturated group and a binder polymer and then developing the imagewise exposed material with a developer containing at least one carbonate and at least one hydrogen carbonate and a specific surfactant in an amount ranging from 1.0 to 10% by weight, and having a specific pH and a specific electrical conductivity. The image-forming method permits the achievement of a sufficient developing ability even at a relatively low pH at which the image-forming material is not damaged so much and the preparation of a printing plate having good printing durability.

Abstract: An image-forming member excellent in the developing ability and printing durability can be obtained and images can be formed without being accompanied by any accumulation of scum in a developing bath used, by developing an image-forming material, in particular, a negative-working image-forming material which comprises a substrate provided thereon with an image-recording layer comprising an infrared light absorber, a polymerization initiator, an ethylenically unsaturated bond-containing monomer and a binder polymer, using a developer which comprises at least one carbonate and at least one hydrogen carbonate, and at least one surfactant selected from the group consisting of nonionic aromatic ether type surfactants represented by the following general formula (1): X—Y—O-(A)n-(B)m—H (wherein X represents an aromatic group; Y represents a single bond or an alkylene group having 1 to 10 carbon atoms; A and B represent groups different from one another and each represents either —CH2CH2O— or —CH2CH(CH3)O—; m and n a

Abstract: A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

Abstract: An improved composition and method for the development of resists is disclosed. The method comprises contacting the resist with a developer solution comprising a source of alkalinity and a cationic surfactant which is an ethoxylated and/or propoxylated tallow amine. The improved developer solution more effectively removes the uncured resist from the resist coated surface.

Abstract: Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness). wherein X1, X2, R1, R2, m, n, a, b and c are as defined in the description.

Abstract: Photoresist polymers and photoresist compositions containing the same are disclosed. A negative photoresist composition containing a photoresist polymer comprising a repeating unit represented by Formula 4 prevents collapse of patterns when photoresist patterns of less than 50 nm are formed. Accordingly, the disclosed negative photoresist composition is very effective for a photolithography process using EUV (Extreme Ultraviolet, 13 nm) light source. wherein R1, R2, R3, R4, R5, R6, R7, a, b and c are as defined in the description.

Abstract: The present invention provides an aqueous regenerator for addition to an aqueous developer that contains an organic solvent, a dispersing agent and a weak base, and has a pH of between about 8 and less than about 13. The aqueous regenerator includes an organic solvent, dispersing agent, and an effective amount of a strong base such that the regenerator has a greater pH than the developer into which the regenerator is to be added.

Abstract: A composition that comprises a photopolymerizable compound containing at least two pendant unsaturated groups; at least one ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic monomer; at least one nonionic surfactant; and at least one photoinitiator is provided. The composition also preferably contains at least one amine modified acrylic oligomer and a dye. Other conventional photoresist components such as photosensitizers, adhesion promoters, leveling agents and solvents may also be included in the composition. Such compositions are useful for forming a pattern on a substrate, such as patterning microlithographic circuits on a substrate.

Abstract: Structured resists are consolidated, that is post-exposure amplified. The amplifying agent used is a compound which contains at least one bicyclic or polycyclic group. The amplifying agent is attached via a reactive group to a reactive anchor group of a polymer that is used for the resist. The process is particularly suitable for amplifying copolymers of cycloolefins and maleic anhydride.

Abstract: The present invention relates to a thinner composition for removing resist used in TFT-LCD manufacturing processes, and more particularly to a thinner composition for removing resist that comprises: a) 0.1 to 5 wt % of an inorganic alkali compound; b) 0.1 to 5 wt % of an organic amine; c) 0.1 to 30 wt % of an organic solvent; d) 0.01 to 5 wt % of a surfactant comprising an ionic surfactant and a non-ionic surfactant in the weight ration of 1:5 to 1:25; and e) 60 to 99 wt % of water. The thinner composition for removing resist of the present invention has good efficiency of removing unwanted resist film constituents formed on the edge of the resist film or at the back of the substrate in TFT-LCD device and semiconductor device manufacturing processes. Also, it does not have the problem of equipment corrosion.

Abstract: A method of manufacturing a semiconductor device includes a process for forming a photoresist pattern. In the disclosed process, residual photoresist polymers are removed using a photoresist polymer remover composition that includes: (a) 5% to 15% of sulfuric acid based on the total weight of said composition, (b) 1% to 5% of hydrogen peroxide or 0.0001% to 0.05% of ozone based on the total weight of said composition, (c) 0.1% to 5% of acetic acid based on the total weight of said composition, (d) 0.0001% to 0.5% of ammonium fluoride based on the total weight of said composition and (e) remaining amount of water.

Abstract: A process amplifies structured resists by utilizing a reaction between a nucleophilic group and an isocyanate group or thiocyanate group to link an amplification agent to a polymer present in the photoresist. The amplification agent includes aromatic and/or cycloaliphatic groups. An isocyanate group or a thiocyanate group and a nucleophilic group form a reaction pair; one of the partners is provided on the polymer and the other partner on the amplification agent. The amplification reaction takes place more rapidly than a linkage to carboxylic anhydride groups. Furthermore, the amplification reaction permits the use of polymers which have high transparency at short wavelengths of less than 200 nm, in particular 157 nm.

Abstract: The present invention relates to a photosensitive composition useful at wavelengths between 300 nm and 10 nm which comprises a polymer containing a substituted or unsubstituted higher adamantane.

Abstract: A method of forming a topographical pattern in a surface of a resist layer, comprising sequential steps of: (a) providing a substrate having a surface; (b) forming a desired thickness resist material layer on the substrate surface; (c) subjecting selected areas of the surface of the resist layer to exposure to an energy beam to form therein a latent image of a desired topographical pattern to be formed therein; (d) contacting the surface of the resist layer with a liquid developing solution comprising a preselected solvent for developing the latent image into the desired topographical pattern while simultaneously supplying ultrasonic energy thereto, the combination of supplying the ultrasonic energy to the preselected solvent providing an increased developing interval and improved image contrast between the exposed and unexposed areas of the layer of resist material, relative to when the liquid developing solution does not comprise the preselected solvent and the ultrasonic energy is not supplied thereto.

Abstract: The invention relates to a process for amplifying structured resists. The process permits a subsequent increase in the etch resistance and a change in the structure size of the resist even in the case of ultrathin layers. The chemical amplification is carried out in a solvent that is so nonpolar that it does not dissolve the structured resist or dissolves it only to an insignificant extent. Because of the lower surface tension of these solvents, the danger of a collapse of these structures is additionally avoided.

Abstract: Stable non-photosensitive polyimide precursor compositions with an adhesion promoter in a non-NMP solvent for use in forming high temperature resistant relief images and a process for making said images.

Abstract: A positive-tone radiation-sensitive composition including: (A) at least one compound selected from the group consisting of a hydrolyzable silane compound represented by general formula (R1)pSi(X)4?p (wherein R1 is a non-hydrolyzable organic group having 1 to 12 carbon atoms, X is a hydrolyzable group, and p is an integer from 0 to 3), hydrolyzates thereof and condensates thereof; (B) a photoacid generator; and (C) a basic compound. A cured product that is excellent in terms of pattern precision and so on can be obtained by using the composition. The composition can be used as a material for forming optical waveguides.

Abstract: A process for producing amplified negative resist structures that includes exposing and contrasting of a resist then simultaneously developing and amplifying the resist to form the amplified resist structures. This substantially simplifies the production of amplified resist structures. Amplifying agents used include bicyclic or polycyclic compounds containing at least one reactive group for attachment to the resist polymer.

Abstract: A method of producing a compound semiconductor device using a lift-off process. The lift-off process includes forming a resist mask having an electrode opening on an active layer of a compound semiconductor that is on a substrate of a compound semiconductor; forming a metal layer on the resist mask and the active layer in the electrode opening; and dissolving the resist mask and removing the metal layer on the resist mask, leaving the metal layer on the active layer in the electrode opening as an electrode. The resist mask is removed sufficiently by using a resist remover consisting essentially of at least one compound selected from an amine-including compound and nitrogen-including cyclic compounds so that the residual resist mask need not be removed by ashing.

Abstract: Novel silicon-containing polymers are obtained by copolymerizing a vinylsilane monomer with a compound having a low electron density unsaturated bond such as maleic anhydride, maleimide derivatives or tetrafluoroethylene. Using the polymers, chemical amplification positive resist compositions sensitive to high-energy radiation and having a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching are obtained.

Abstract: Novel silicon-containing polymers are provided comprising recurring units having a POSS pendant and units which improve alkali solubility under the action of an acid. Resist compositions comprising the polymers are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of up to 300 nm and improved resistance to oxygen plasma etching.

Abstract: A chemically amplified photo-resist includes a polymer containing acid-labile radicals attached to a polar group and also contains anchor groups that allow attachment of a consolidating agent. The polymer includes first repeating units containing siloxane groups. The photoresist on the one hand exhibits an enhanced transparency for short-wavelength radiation and on the other hand permits chemical consolidation of the structured resist. A process for producing structured resists is a also described.

Abstract: In this developing method and apparatus, a concentration measuring unit 222 picks part of developing fluid in a blending tank 186 to measure the resist concentration by an absorption photometry and feeds the detected resist concentration to a control unit 240. The control unit 240 controls respective valves 210, 212, 216 of a TMAH concentrate solution 200, a solvent pipe 204 and a drain pipe 208 in a manner that the developing fluid in the blending tank 186 has a TMAH concentration corresponding to a measured resist-concentration value to accomplish a constant developing rate, performing component control of the developing fluid. The developing fluid transferred from the blending tank 186 to a supply tank 188 is fed to a developer nozzle DN in a developing section 126 through a developer pipe 224 owing to the drive of a pump 228. Accordingly, even if the developing fluid is reused in the developing process in multiple times, it is possible to make sure of the uniformity in development.

Abstract: Contaminant removal from a substrate can be performed using a supercritical fluid. An apparatus can be configured to operate at conditions that take advantage of higher solubility of a contaminant in its supercritical state compared to its liquid state. The substrate can be exposed to a supercritical fluid in a chamber to remove at least some of the contaminant. Outside the chamber, the supercritical fluid can be cooled to its corresponding liquid state, in which lower solubility of the contaminant may allow the contaminant to separate into a different phase from the liquid phase of the supercritical fluid. Such contaminant removal can be highly advantageous to substrates that withstand only limited amounts of physical or mechanical stress or heat. The contaminant removal can also be used where geometries virtually prevent removal by physical or mechanical means.

Abstract: Compositions containing certain amines and/or quaternary ammonium compounds, hydroxylamine, corrosion inhibitor, organic diluent and optionally water are capable of removing photoresist, photoresist byproducts and residue and etching residues from a substrate.

Abstract: The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist, the resist structure is simultaneously developed and aromatized. This substantially simplifies the production of amplified resist structures. Amplifying agents include compounds having not only a reactive group for attachment to an anchor group of the polymer, but also at least one aromatic group.

Abstract: A method of developing a photosensitive planographic printing plate which includes a support and a recording layer and which has been exposed to a light beam with a developer, wherein the photosensitive planographic printing plate is immersed in the developer while being conveyed, and development is accelerated by brushing the immersed photosensitive planographic printing plate with a brush member produced by winding, around a peripheral surface of an axially rotating roller, a brushing band composed of a sheet-like substrate containing a hairy material woven therein.

Abstract: A method of forming a minute resist pattern wherein a positive-working photoresist composition containing 3 to 15 parts by weight of a quinone diazide group-containing photosensitizer relative to 100 parts by weight of alkali-soluble novolak resin is developed by an aqueous organic or inorganic alkali solution having a lower alkali concentration than that of the conventional one as the developer. The preferable example of the organic alkali materials in the developer is quaternary ammonium hydroxide, and the preferable example of the inorganic alkali materials in the developer is alkali metal hydroxide. The concentrations of the quaternary ammonium hydroxide and the alkali metal hydroxide in the developing solution are 2.2% by weight or less and 0.4% by weight or less respectively. Using such developing solution, high sensitivity, a high film retention rate, high resolution, low process dependency of dimension accuracy, and a formation of excellent pattern profile can be achieved.

Abstract: A process of forming a resist image in a microelectronic substrate, the process comprises the steps of: (a) providing a substrate having a polymer coating thereon, wherein the polymer is insoluble in water having a pH less than or equal to a specified pH (e.g., 7.0, 6, 5, or 4); then (b) imagewise exposing the coating to radiation such that exposed and unexposed coating portions are formed, with said exposed coating portions being soluble in water having a pH less than or equal to said specified pH7.0; and then (c) contacting said coating to a developing composition comprising carbon dioxide and water, said water having a specified pH less than or equal to 7.0 (and preferably a pH of about 2 or 3 to 4, 5 or 6; i.e. a specified pH less than or equal to 6, 5, or 4), so that said exposed coating portions are preferentially removed from the substrate as compared to said unexposed coating portions to form an image thereon.

Abstract: A method for carrying out positive tone lithography with a carbon dioxide solvent system is carried out by (a) providing a substrate having a polymer resist layer formed thereon; (b) exposing at least one portion of the polymer resist layer to radiant energy to form at least one light field region in the polymer resist layer; and then (c) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system preferably comprising a polar group, under conditions in which the at least one light field region is preferentially removed.

Abstract: This invention discloses compositions that can be polymerized/crosslinked imagewise upon exposure to ionization radiation such as x-ray, electron beam, ion beam, and gamma-ray. This invention also discloses methods of use for these compositions for microfabrication of ceramics, for stereolithography, and for x-ray, e-beam, and ion-beam lithography which can be used for photoresists.

Abstract: An alkaline liquid developer suitable for development of an infrared radiation-presensitized plate for use in making a lithographic printing plate, which developer comprises at least one selected from the group consisting of the compound represented by defined formulas (I) and (II), acetylene alcohols and acetylene glycols. A method for preparing a lithographic printing plate is also described.

Abstract: A process for chemically amplifying structured resists includes applying a chemically amplified resist to a substrate and structuring it in a customary manner. Preferably, the amplification agent is applied in an aqueous phase to the structured resist and, after chemical amplification is complete, excess agent is removed by an aqueous wash medium. By using water as a solvent for the amplification agent and as a wash medium, it is possible to avoid organic solvents that constitute an explosion hazard. Furthermore, removal of partially exposed resist sections is suppressed.

Abstract: A composition and method to reduce photolithographic residue and scum formation on a substrate or in a solution, and to reduce or prevent foam formation. The composition contains a diphenyl oxide compound in combination with an antifoam agent. The composition may be added to developer solutions and stripper solutions used in manufacturing printed wiring boards.

Abstract: The present invention relates to a polymerizable coating composition suitable for the manufacture of printing plates developable on-press. The coating composition comprises (i) a polymerizable compound and (ii) a polymeric binder comprising polyethylene oxide segments, wherein the polymeric binder is selected from the group consisting of at least one graft copolymer comprising a main chain polymer and polyethylene oxide side chains, a block copolymer having at least one polyethylene oxide block and at least one non-polyethylene oxide block, and a combination thereof. The invention is also directed to an imageable element comprising a substrate and the polymerizable coating composition.

Abstract: A method of a photolithography processing system includes illuminating a surface of a wafer supported by a table with first illumination tools and a second illumination tool by positioning the first illumination tools at varying lateral heights relative to the table to illuminate the surface of the wafer at various predetermined angles of incidence and positioning the second illumination tool to illuminate the surface of the wafer vertically from above the wafer on the table, taking pictures of the surface of the wafer with a camera while the surface of the wafer is being illuminated, receiving a signal from the camera in a controller, detecting a presence of particles on the surface of the wafer with the controller, and transporting the wafer to the process-performing or cleaning position according to whether particles are detected on the surface of the wafer.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: A photoresist polymer remover composition for removing photoresist residuals generated from etching or ashing sub-processes. The disclosed photoresist polymer remover composition includes: (a) 5% to 15% of sulfuric acid based on the total weight of said composition, (b) 1% to 5% of hydrogen peroxide or 0.0001% to 0.05% of ozone based on the total weight of said composition, (c) 0.1% to 5% of acetic acid based on the total weight of said composition, (d) 0.0001% to 0.5% of ammonium fluoride based on the total weight of said composition and (e) remaining amount of water.

Abstract: A composition and method to reduce or to prevent residue and scum formation on a substrate or in a solution. The composition contains an aromatic alkoxylate in combination with a polyol or ether or ester of a polyol. The composition also reduces or prevents foam formation such as in developing processes in the manufacturing of printed wiring boards.

Abstract: A device is described for accurately transferring multiple individual fluids from multiple source containers into a single receiving container. Fluid flows from the multiple source containers through individual fluid conduits to a chamber having a single fluid outlet conduit. The fluid outlet conduit is in fluid communication with a single receiving container. A pressure conduit is in communication with the chamber for alternately creating positive and negative pressures in the chamber to cause fluid to flow from the individual source containers into the chamber, and to cause fluid to flow from the chamber into the receiving container in response to commands from a control means in the device.