Finishing Or Perfecting Composition Or Product Patents (Class 430/331)
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Patent number: 7691548Abstract: There is provided a method of manufacturing a photomask for forming a semiconductor pattern. The method may include forming a plurality of dies including a main pattern, and forming a pseudo pattern to an area adjacent to the main pattern between the plurality of dies. A multi developing process of sequentially and repeatedly supplying a developer on the mask, supplying DI water on the mask, and drying the mask may be performed in manufacturing the mask.Type: GrantFiled: August 21, 2008Date of Patent: April 6, 2010Assignee: Samsung Electronics Co., Ltd.Inventor: Seong-yoon Kim
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Patent number: 7691559Abstract: A method of performing immersion lithography on a semiconductor wafer is provided. The method includes providing a layer of resist onto a surface of the semiconductor wafer. Next, an edge-bead removal process spins the wafer at a speed greater than 1000 revolutions per minute and dispenses solvent through a nozzle while the wafer is spinning. Then, the resist layer is exposed using an immersion lithography exposure system.Type: GrantFiled: January 24, 2006Date of Patent: April 6, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Yu Chang, C. C. Ke, Vincent Yu
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Publication number: 20100075263Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing either a water-soluble polymer and an amide group-containing monomer or a water-soluble polymer which contains at least (meth)acrylamide as a monomeric component. Also disclosed is a method of forming fine-line patterns using any one of said over-coating agents. According to the invention, the thermal shrinkage of the over-coating agent for forming fine patterns in the heat treatment can be extensively increased, and one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices.Type: ApplicationFiled: November 23, 2009Publication date: March 25, 2010Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
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Publication number: 20100068651Abstract: A developing or processing solution can be used to provide flexographic relief printing plates. This processing solution comprises dipropylene glycol dimethyl ether (DME) and optionally one or more alcohols or other co-solvents. The processing solution is used to remove non-polymerized material after imaging while leaving polymerized material in a relief image.Type: ApplicationFiled: August 21, 2009Publication date: March 18, 2010Inventor: David C. Bradford
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Patent number: 7678532Abstract: The present invention provides a method of processing a substrate, comprising a reflow process for forming a desired pattern by dissolving a resist pattern, whereby occurrence of defectives, such as disconnection, can be prevented, and a pattern having an appropriate uniformity can be formed efficiently on each predetermined area desired to be masked. From a photoresist pattern 206 including thicker film portions and thinner film portions, the thinner film portions are removed by a re-developing process. Next, the photoresist so formed by the re-developing process on a backing layer 205 is dissolved such that it passes through a stepped portion 205a formed at each edge portion 205b of the backing layer 205, thereby masking a predetermined area Tg.Type: GrantFiled: March 1, 2007Date of Patent: March 16, 2010Assignee: Tokyo Electron LimitedInventors: Yutaka Asou, Masatoshi Shiraishi
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Publication number: 20100040972Abstract: A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.Type: ApplicationFiled: October 13, 2009Publication date: February 18, 2010Applicant: FUJIFILM CorporationInventors: Shinji TARUTANI, Hideaki Tsubaki, Kazuyoshi Mizutani, Kenji Wada, Wataru Hoshino
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Publication number: 20100040971Abstract: A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.Type: ApplicationFiled: October 13, 2009Publication date: February 18, 2010Applicant: FUJIFILM CorporaionInventors: Shinji TARUTANI, Hideaki TSUBAKI, Kazuyoshi MIZUTANI, Kenji WADA, Wataru HOSHINO
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Patent number: 7662539Abstract: The present invention provides a resist pattern thickening material which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a phase transfer catalyst. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.Type: GrantFiled: August 3, 2004Date of Patent: February 16, 2010Assignee: Fujitsu LimitedInventors: Koji Nozaki, Miwa Kozawa
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Publication number: 20100028817Abstract: The present invention provides a resist substrate-treating solution for improving defects on a developed pattern surface, and also provides a resist substrate treatment method employing the treating solution. The resist substrate-treating solution comprises a solvent and a nitrogen-containing or oxygen-containing water-soluble polymer such as a polyamine, a polyol or a polyether. In the treatment method, a developed resist pattern is treated with the resist substrate-treating solution and then washed with pure water.Type: ApplicationFiled: October 12, 2007Publication date: February 4, 2010Inventors: Go Noya, Ryuta Shimazaki, Masakazu Kobayashi
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Publication number: 20100028803Abstract: A surface treating agent for resist pattern formation comprises a compound having two or more nucleophilic functional groups in each of the molecules thereof, or its salt, and a solvent.Type: ApplicationFiled: July 31, 2009Publication date: February 4, 2010Applicant: FUJIFILM CorporationInventors: Naoya SUGIMOTO, Shinji Tarutani, Sou Kamimura, Kazuto Shimada, Naoyuki Nishikawa, Tomotaka Tsuchimura, Yuko Tada
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Patent number: 7655481Abstract: A method for manufacturing an industrial product encompasses: forming a intermediate product pattern, which implements a part of a intermediate product of the industrial product by a sequence of processes corresponds to a part of a procedure for manufacturing the industrial product; forming an interconnect-changing insulator on the intermediate product pattern; boring sampling contact holes in the interconnect-changing insulator so as to make bare a part of the intermediate product pattern to define sampling sites; delineating evaluation interconnects on the interconnect-changing insulator so that each of the evaluation interconnects can electrically connected to at least one of the sampling sites of intermediate product pattern; and measuring an electrical resistance between subject sampling sites through the evaluation interconnects so as to detect a product defect in the intermediate product pattern.Type: GrantFiled: January 5, 2006Date of Patent: February 2, 2010Assignee: Kabushiki Kaisha ToshibaInventor: Yuuichi Tatsumi
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Publication number: 20100021700Abstract: The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method.Type: ApplicationFiled: October 12, 2007Publication date: January 28, 2010Inventors: Go Noya, Ryuta Shimazaki, Masakazu Kobayashi
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Patent number: 7642043Abstract: There is disclosed a rework process for a photoresist film over a substrate having at least an antireflection silicone resin film and the photoresist film over the silicone resin film comprising: at least removing the photoresist film with a solvent while leaving the silicone resin film unremoved; and forming a photoresist film again over the silicone resin film. In this case, the substrate over which the photoresist film is reworked can have an organic film under the silicone resin film. There can be provided a rework process for a photoresist film that can be conducted more easily at lower cost.Type: GrantFiled: October 10, 2006Date of Patent: January 5, 2010Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Tsutomu Ogihara, Takafumi Ueda
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Patent number: 7638255Abstract: The invention relates to a reaction development patterning process wherein a photo resist layer masked by a desired pattern is irradiated using ultraviolet light and this layer is subsequently washed using a solvent solution containing alkali characterized by said photo resist layer comprising a condensation type polymer containing in the main chain carbonyl groups (C?O) bonded to hetero atoms and a photo acid generating agent and said alkali being an amine. This reaction development patterning process is characterized by being able to use as a photo resist target resins containing bonds having low reactivity toward nucleophilic reagents, for example, condensation type polymers containing any one of bonds such as carbonate, ester, urethane and amide.Type: GrantFiled: October 4, 2002Date of Patent: December 29, 2009Assignee: Yokohama TLO Company, Ltd.Inventors: Masao Tomoi, Takafumi Fukushima, Hiroshi Itatani
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Patent number: 7638268Abstract: There is disclosed a rework process for a photoresist film over a substrate having at least a first antireflection silicone resin film and the photoresist film over the first silicone resin film comprising: at least removing the photoresist film with a solvent while leaving the first silicone resin film unremoved; forming a second antireflection silicone resin film over the first silicone resin film; and forming a photoresist film again over the second silicone resin film. There can be provided a rework process for a photoresist film that can be conducted more easily at lower cost and provide more certainly an excellent resist pattern.Type: GrantFiled: November 9, 2006Date of Patent: December 29, 2009Assignee: Shin-Estu Chemical Co., Ltd.Inventors: Tsutomu Ogihara, Takafumi Ueda
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Patent number: 7625688Abstract: The present invention provides a resist pattern thickening material and the like which can thicken a resist pattern and form a fine space pattern. The resist pattern thickening material contains: a resin; a crosslinking agent; and at least one type selected from cationic surfactants, amphoteric surfactants, and non-ionic surfactants selected from alkoxylate surfactants, fatty acid ester surfactants, amide surfactants, alcohol surfactants, and ethylene diamine surfactants. In a process for forming a resist pattern of the present invention, after a resist pattern is formed, the thickening material is applied onto a surface of the pattern. A process for manufacturing a semiconductor device of the present invention includes: after forming a resist pattern on an underlying layer, applying the thickening material on a surface of the pattern so as to thicken the pattern; and a step of patterning the underlying layer by etching by using the pattern.Type: GrantFiled: November 22, 2005Date of Patent: December 1, 2009Assignee: Fujitsu LimitedInventors: Koji Nozaki, Miwa Kozawa
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Publication number: 20090280440Abstract: A surface treating agent for resist pattern, characterized by containing not only a chemical species having a functional group capable of chemical adsorption to resist pattern and a polymerizable group but also a solvent.Type: ApplicationFiled: April 30, 2009Publication date: November 12, 2009Applicant: FUJIFILM CORPORATIONInventors: Shinji Tarutani, Hideaki Tsubaki, Naoya Sugimoto
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Patent number: 7608368Abstract: A pattern forming method includes developing a resist film on a main surface of a substrate by flowing a developing solution on the film to form a resist pattern, the developing the film including partitioning the surface into M (?2) regions and determining correction exposure dose for each of the M region, the determining the correction exposure dose including determining a correction exposure dose for an i-th (1?i?M) region so that an actual pattern dimension of a pattern on the i-th region matches a design pattern dimension based on a pattern opening ratio of a pattern to be formed on the substrate, the pattern being located on a region which is further upstream region than the i-th region with respect to an upstream direction of a flow of the solution, and forming the pattern by etching the substrate using the resist pattern as a mask.Type: GrantFiled: January 31, 2006Date of Patent: October 27, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Sakurai, Tooru Shibata, Masato Saito, Masamitsu Itoh
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Patent number: 7608389Abstract: Novel photoresist materials, which can be photolithographically processed in biocompatible conditions are presented in this invention. Suitable lithographic scheme for the use of these and analogous resists for biomolecule layer patterning on solid substrates are also described. The processes described enable micropatterning of more than two different proteins on solid substrates without denaturation of the proteins. The preferred resist materials are based on (meth)acrylate copolymers that contain at least one acid cleavable ester group and at least one hydrophilic group such as an alcoholic or a carboxylic group.Type: GrantFiled: May 30, 2002Date of Patent: October 27, 2009Assignees: National Centre for Scientific Research DemokritosInventors: Panagiotis Argitis, Konstantinos Misiakos, Sotirios E. Kakabakos, Constantinos D. Diakoumakos
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Patent number: 7604911Abstract: A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.Type: GrantFiled: December 3, 2007Date of Patent: October 20, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Mitsuhiro Hata, Jung-Hwan Hah, Hyun-Woo Kim, Sang-Gyun Woo
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Patent number: 7595143Abstract: A photoresist composition includes about 10 to about 70% by weight of a binder resin including a phenol-based polymer, about 0.5 to about 10% by weight of a photo-acid generator, about 1 to about 20% by weight of a cross-linker, about 0.1 to about 5% by weight of a dye and about 10 to about 80% by weight of a solvent. The photoresist composition may be applied to, for example, a method of manufacturing a TFT substrate.Type: GrantFiled: August 22, 2006Date of Patent: September 29, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Jeong-Min Park, Hi-Kuk Lee, Hyoc-Min Youn, Ki-Hyuk Koo, Byung-Uk Kim
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Patent number: 7592132Abstract: In a method of effectively miniaturizing a resist pattern, a super fine pattern-forming method of restricting a film thickness of a crosslinked film and also preventing developing defects is provided using a super fine pattern-forming material which contains a solvent composed of a water-soluble resin, a water-soluble crosslinking agent, and water or a mixing solution of water and a water-soluble organic solvent, and an amine compound-containing developing solution. The amine compound-containing developing solution is preferably a primary amine compound such as polyallylamine, monomethanolamine, and monoethanolamine, a secondary amine compound such as dimethylamine, diethylamine, dimethanolamine, and diethanolamine, a tertiary amine compound such as trimethylamine, triethylamine, trimethanolamine, and triethanolamine, or a quartenary amine compound such as hydrated tetramethylamine.Type: GrantFiled: August 31, 2005Date of Patent: September 22, 2009Assignee: AZ Electronic Materials USA Corp.Inventors: Kiyohisa Takahashi, Yusuke Takano
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Patent number: 7591270Abstract: Process solutions comprising one or more surfactants are used to reduce the number of pattern collapse defects on a plurality of photoresist coated substrates during the manufacture of semiconductor devices.Type: GrantFiled: September 14, 2006Date of Patent: September 22, 2009Assignee: Air Products and Chemicals, Inc.Inventors: Peng Zhang, Danielle Megan King Curzi, Eugene Joseph Karwacki, Jr., Leslie Cox Barber
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Publication number: 20090226844Abstract: The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.Type: ApplicationFiled: May 15, 2009Publication date: September 10, 2009Applicant: FUJITSU LIMITEDInventors: Koji Nozaki, Miwa Kozawa, Takahisa Namiki
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Publication number: 20090208887Abstract: A removing solution for photosensitive composition for removal of pigment-containing photosensitive compositions, comprising an alicyclic ketone, an alkylene glycol monoalkyl ether and/or alcohol, and optionally an acetic acid ester. The removing solution has excellent photosensitive composition removing performance.Type: ApplicationFiled: July 11, 2006Publication date: August 20, 2009Applicant: SHOWA DENKO K.K.Inventors: Masato Kaneda, Kouichi Terao
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Patent number: 7575844Abstract: Composites, methods, and systems for production of multi-color images which are developable at various wavelengths are disclosed and described. The color forming composite can include a first color forming layer having a first polymer matrix, a first color former, and a first developer where the first color former and the first developer can be in separate phases within the first color forming layer; a second color forming layer having a second polymer matrix, a second color former, and a second developer where the second color former and the second developer can be in separate phases within the second color forming layer; and at least one radiation absorber. The radiation absorber can be present in at least one of the first or second color forming layers. Additionally, the first color forming layer can have a first extinction coefficient that is higher than the second extinction coefficient of the second color forming layer.Type: GrantFiled: April 27, 2007Date of Patent: August 18, 2009Assignee: Hewlett-Packard Development Company, L.P.Inventors: Vladek Kasperchik, Susan E. Bailey
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Patent number: 7569336Abstract: In a method of forming a pattern using a composition for removing photoresist, a layer is formed on a substrate, and then a photoresist pattern is formed on the layer. A portion of the layer exposed by the photoresist pattern is etched using the photoresist pattern as an etching mask to form the pattern on the substrate. Then, the photoresist pattern is removed using the composition including hydroxylamine, an alkanolamine-based compound, a morpholine-based compound, a polar solvent, a corrosion preventing agent, and water. The composition may effectively remove a photoresist pattern and etched residues without damaging the substrate and/or the pattern including metal, nitride, oxide and/or metal nitride.Type: GrantFiled: September 21, 2006Date of Patent: August 4, 2009Assignee: Ram Technology Co., Ltd.Inventors: Jun-Ing Kil, Sok-Ho Yi, Kyong-Hee Kim, Hee Seo, Bon-Wang Koo, Min-Young Kim
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Patent number: 7563563Abstract: The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.Type: GrantFiled: April 18, 2006Date of Patent: July 21, 2009Assignee: International Business Machines CorporationInventors: Kuang-Jung J. Chen, Mahmoud Khojasteh, Ranee Wai-Ling Kwong, Margaret C. Lawson, Wenjie Li, Kaushal S. Patel, Pushkara R. Varanasi
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Patent number: 7556915Abstract: An isolated hole in a photoresist layer is formed by surrounding it with additional, somewhat narrower, dummy hole features. The ratio of feature width to resist thickness is adjusted so that, after development, there is no resist on the floor of the isolated (main) hole whereas a reduced, but finite, thickness of resist remains on the floors of the holes derived from the dummy features. The isolated hole may then be used for etching or electroplating the underlying substrate.Type: GrantFiled: December 8, 2005Date of Patent: July 7, 2009Assignee: Headway Technologies, Inc.Inventor: Laurie Jane Lauchlan
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Publication number: 20090170037Abstract: A composition for removing a photoresist includes a) an amine compound having a cyclic amine and/or a diamine, b) a glycol ether compound, c) a corrosion inhibitor and d) a polar solvent. The composition further includes a stripping promoter. Further disclosed is a method of manufacturing an array substrate using the composition for removing a photoresist.Type: ApplicationFiled: November 26, 2008Publication date: July 2, 2009Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-Hyun CHOUNG, Hong-Sick Park, Sun-Young Hong, Bong-Kyun Kim, Byeoung-Jin Lee, Byung-Uk Kim, Jong-Hyun Jeong, Suk-Il Yoon, Sung-Gun Shin, Soon-Beom Huh, Se-Hwan Jung, Doo-Young Jang
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Patent number: 7553606Abstract: Disclosed is a method of forming patterns in semiconductor devices by using photo resist patterns. These methods comprise forming photo resist patterns on a substrate. Inferior patterns are selected among the photo resist patterns. The inferior patterns are eliminated or shrunken by irradiating the selected inferior patterns with an electron beam.Type: GrantFiled: October 4, 2006Date of Patent: June 30, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-Gun Kang, Jin-Mo Kang, Jae-Ho Lee, Jun-Seop Lee
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Patent number: 7547503Abstract: Provided is a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern with a smaller number of process steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent having a secondary amino group protected by an o-nitrobenzyloxycarbonyl group.Type: GrantFiled: February 27, 2007Date of Patent: June 16, 2009Assignee: Canon Kabushiki KaishaInventors: Toshiki Ito, Natsuhiko Mizutani, Takako Yamaguchi, Yasuhisa Inao
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Publication number: 20090148793Abstract: A processing method of a lithographic printing plate precursor includes: exposing imagewise a lithographic printing plate precursor comprising a support on a surface of which at least one of: a hydrophilizing treatment; and an undercoat layer has been provided and an image-recording layer, to cure an exposed area of the image-recording layer; and undergoing developing processing with an aqueous solution having pH of from 2 to 10, wherein the aqueous solution comprises an amphoteric surfactant and an anionic surfactant selected from an anionic surfactant having an aliphatic chain and a total number of carbon atoms included in the aliphatic chain of 6 or more and an anionic surfactant having an aromatic ring and a total number of carbon atoms of 12 or more, and a content of the anionic surfactant is from 0.1 to 3.3% by weight of the aqueous solution.Type: ApplicationFiled: September 26, 2008Publication date: June 11, 2009Applicant: FUJIFILM CORPORATIONInventors: Keiichi ADACHI, Shigekatsu FUJII, Yoshinori TAGUCHI, Takashi SATO
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Patent number: 7537879Abstract: The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.Type: GrantFiled: November 22, 2004Date of Patent: May 26, 2009Assignee: AZ Electronic Materials USA Corp.Inventors: Francis M. Houlihan, Ralph R. Dammel, Andrew R. Romano, Munirathna Padmanaban, M. Dalil Rahman
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Publication number: 20090130606Abstract: A photoresist developer including a basic aqueous solution containing 0.5˜10 mass % of a particular nonionic surfactant and 0.01-10 mass % of particular ammonium compound, the photoresist developer makes it possible to form a favorable resist pattern with out causing scum even when developing thick photoresists.Type: ApplicationFiled: June 13, 2006Publication date: May 21, 2009Inventors: Shunkichi Omae, Seiji Tono, Toshiaki Otani, Yasutaka Natsuka
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Publication number: 20090104558Abstract: Solutions for the treatment of a resist used in the manufacturing of a semiconductor device or masks used in the manufacturing of semiconductor devices are described. Preferably, the solution includes a transition metal organic compound. Furthermore embodiments of modified resists, a process and an intermediate product are described.Type: ApplicationFiled: October 19, 2007Publication date: April 23, 2009Inventor: Klaus Elian
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Patent number: 7514197Abstract: The resist according to the present invention includes any one of tetrachloromethyl tetramethoxycalix [4] arene and trichloromethyl tetramethoxycalix [4] arene. The resist including such kind of components is soluble in the solvent having less effect to worsen a working environment, namely, ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate and 2-heptanone. It can be developed by tetra-methyl ammonium hydroxide in addition to the above mentioned solvent. By exposing this resist by electronic ray, high resolution of 8 nm is attained, and by using this resist as a mask, various materials can be formed into a hyperfine shape. According to such kind of resist, a photosensitive resist material which has high resolution and solvable to solvents having less effect to worsen the working environment and can be developed by the solvents, a exposure method using it, and a hyperfine processing method using it are provided.Type: GrantFiled: September 4, 2003Date of Patent: April 7, 2009Assignees: NEC Corporation, Tokuyama CorporationInventors: Yukinori Ochiai, Masahiko Ishida, Junichi Fujita, Takashi Ogura, Junji Momoda, Eiji Oshima
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Patent number: 7510816Abstract: A resist composition is provided comprising a polysiloxane, a specific acid generator, a nitrogen-containing organic compound, and a solvent. The resist composition exerts high-resolution performance without the problem of a T-top profile and is suited for the bilayer resist process using ArF exposure.Type: GrantFiled: October 4, 2005Date of Patent: March 31, 2009Assignee: Shin-Estu Chemical Co., Ltd.Inventors: Katsuya Takemura, Kazumi Noda, Youichi Ohsawa
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Patent number: 7510815Abstract: A removing solution for photosensitive composition for removal of colored pigment-containing photosensitive compositions, comprising at least one solvent selected from the group consisting of alkylene glycol monoalkyl ether carboxylic acid esters, alkoxycarboxylic acid esters and alicyclic ketones, at least one solvent selected from the group consisting of linear amides, cyclic amides, sulfur-containing compounds and cyclic esters, and if desired an aromatic hydrocarbon having 9 or more carbon atoms. The removing solution for photosensitive composition exhibits excellent photosensitive composition removing performance.Type: GrantFiled: February 9, 2006Date of Patent: March 31, 2009Assignee: Showa Denko K.K.Inventor: Masato Kaneda
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Publication number: 20090081592Abstract: A fountain solution composition for lithographic printing characterized by comprising at least one acyclic hydrocarbon diol compound, having 6 to 8 carbon atoms in total and two —OH groups, wherein said two —OH groups bind to carbon atoms at 1- and 2-positions, respectively; said fountain solution composition can be used to improve blanket piling.Type: ApplicationFiled: September 25, 2008Publication date: March 26, 2009Applicant: FUJIFILM CORPORATIONInventors: Akimitsu HAIJIMA, Hideyuki Hattori
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Publication number: 20090081583Abstract: A method for making a lithographic printing plate includes the steps of: (1) providing a heat-sensitive lithographic printing plate precursor including on a support having a hydrophilic surface or which is provided with a hydrophilic layer, a heat-sensitive coating, (2) image-wise exposing the precursor with IR-radiation or heat, and (3) developing the image-wise exposed precursor with an alkaline developing solution including a compound having at least two onium groups. According to the above method, a printing plate is formed with an improved developing latitude or an improved exposure latitude.Type: ApplicationFiled: March 15, 2007Publication date: March 26, 2009Applicant: AGFA GRAPHICS NVInventors: Johan Loccufier, Stefaan Lingier, Marc Van Damme
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Publication number: 20090042149Abstract: A rinsing process is performed by supplying a rinsing-liquid onto a substrate with a light-exposed pattern formed thereon and treated by a developing process. The rinsing liquid contains a polyethylene glycol family surfactant or an acetylene glycol family surfactant in a critical micelle concentration or less. Preferably, the surfactant includes a hydrophobic group having a carbon number of larger than 11 and having no double bond or triple bond therein.Type: ApplicationFiled: July 29, 2008Publication date: February 12, 2009Inventors: Ryouichirou Naitou, Takeshi Shimoaoki
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Publication number: 20090017398Abstract: A method for making a lithographic printing plate includes the steps of providing a heat-sensitive lithographic printing plate precursor including on a support having a hydrophilic surface or which is provided with a hydrophilic layer, a heat-sensitive coating; image-wise exposing the precursor with IR-radiation or heat; and developing the image-wise exposed precursor with an alkaline developing solution, wherein an anti-sludge agent is present in the precursor or in the developing solution or in the precursor and the developing solution, and wherein the anti-sludge agent is a 5-membered heteroaromatic compound, including a —NH— group wherein the hydrogen is capable of being deprotonated in the alkaline developing solution, selected from the group consisting of an optionally substituted benztriazole, 1,2,3-triazole, tetrazole, or indazole compound. According to the above method, the formation of sludge is inhibited or reduced.Type: ApplicationFiled: February 21, 2007Publication date: January 15, 2009Applicant: AGFA GRAPHICS NVInventors: Johan Loccufier, Stefaan Lingier, Frank Vangaever, Mark Lens, Marc Van Damme
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Patent number: 7476486Abstract: A resist composition comprising a fullerene having five phenol derivatives is provided.Type: GrantFiled: February 15, 2006Date of Patent: January 13, 2009Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Takanobu Takeda
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Patent number: 7476484Abstract: Linear crosslinkable polyurethanes obtained from (a) at least one diisocyanate having 2 to 30 carbon atoms, (b) at least one aliphatic or cycloaliphatic diol having 2 to 30 carbon atoms, to whose carbon chain at least one carboxyl group is covalently bonded, and some or all of said carboxyl groups have been esterified with an olefinically unsaturated C3-C8alcohol or with the glycidyl ester of an olefinically unsaturated C3-C8carboxylic acid, and (c) optionally at least one aliphatic or cycloaliphatic diol having 2 to 30 carbon atoms, to whose carbon chain at least one carboxyl group is covalently bonded. The polyurethanes are suitable, alone or as a mixture with other reactive components, for thermal and/or photochemical crosslinking in crosslinkable compositions for the production of mouldings, coatings and in particular solder masks.Type: GrantFiled: August 4, 2004Date of Patent: January 13, 2009Assignee: Huntsman Advanced Materials Americas Inc.Inventors: Bernhard Sailer, Catherine Schoenenberger, Ottilie Zelenko
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Patent number: 7473517Abstract: A method of creating a resist image on a semiconductor substrate includes exposing a layer of photoresist on the semiconductor substrate and developing the exposed layer of photoresist using a first fluid including supercritical carbon dioxide and a base such as Tetra-Methyl Ammonium Hydroxide (TMAH). Additionally, the developed photoresist can be cleaned using a second fluid including supercritical carbon dioxide and a solvent such as methanol, ethanol, isopropanol, and xylene.Type: GrantFiled: December 29, 2004Date of Patent: January 6, 2009Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Yu Chang, Burn Jeng Lin, Chi-Wen Liu
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Patent number: 7470503Abstract: A preferred embodiment of the invention provides a semiconductor fabrication process. Embodiments include a method for removing contaminating particles from the surface of the wafer, such as in lithography. Embodiments also provide methods for repairing patterning defects caused by particles. The method comprises forming a resist layer over a substrate and a topcoat layer over the resist layer. The method further includes exposing the resist layer, and developing the resist layer a first time. Preferably, developing the resist layer the first time comprises dissolving a first portion of the topcoat layer in the developing solution. Embodiments further include spinning the substrate, developing the resist layer a second time after spinning the substrate. Preferably, developing the resist layer the second time comprises dissolving a second portion of the topcoat layer.Type: GrantFiled: April 29, 2005Date of Patent: December 30, 2008Assignee: Infineon Technologies AGInventor: Stefan Brandl
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Publication number: 20080305435Abstract: Aluminum-containing substrates having an anodic oxide layer are coated with a interlayer by carefully controlling the concentration of phosphonic acid groups in an interlayer polymer and aluminum (+3) concentration in a post-treatment solution. These substrates have improved hydrophilicity, lithographic printing ink repellency, and overall improved printability when used as part of lithographic printing plates.Type: ApplicationFiled: June 5, 2007Publication date: December 11, 2008Inventor: Yasushi Miyamoto
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Publication number: 20080299491Abstract: A highly alkaline developer composition includes an alkali silicate, an alkyl sulfate, and a water-soluble or water-dispersible polyhydroxy compound such as glycerin. The developer composition is useful for processing imaged elements to produce lithographic printing plates with reduced etching of the aluminum substrates that have been coated with hydrophilic polymers such as poly(vinyl phosphonic acid) and with minimal sludging in the developer tank.Type: ApplicationFiled: May 31, 2007Publication date: December 4, 2008Inventors: Gary R. Miller, Melanie Roth, Eric E. Clark
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Patent number: 7442493Abstract: A printing method comprising: imagewise exposing a lithographic printing plate precursor comprising a support and an image recording layer being removable with a fountain solution or a combination of a printing ink and a fountain solution and loading the exposed lithographic printing plate precursor on a plate cylinder of a printing press, or loading the lithographic printing plate precursor on a plate cylinder of a printing press and imagewise exposing the loaded lithographic printing plate precursor, supplying at least a fountain solution comprising a compound represented by the formula (I) defined herein to the exposed lithographic printing plate precursor so as to remove an unexposed area of the image recording layer; and performing printing.Type: GrantFiled: October 6, 2005Date of Patent: October 28, 2008Assignee: Fujifilm CorporationInventors: Koji Sonokawa, Kuniharu Watanabe