Finishing Or Perfecting Composition Or Product Patents (Class 430/331)
  • Patent number: 7691548
    Abstract: There is provided a method of manufacturing a photomask for forming a semiconductor pattern. The method may include forming a plurality of dies including a main pattern, and forming a pseudo pattern to an area adjacent to the main pattern between the plurality of dies. A multi developing process of sequentially and repeatedly supplying a developer on the mask, supplying DI water on the mask, and drying the mask may be performed in manufacturing the mask.
    Type: Grant
    Filed: August 21, 2008
    Date of Patent: April 6, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Seong-yoon Kim
  • Patent number: 7691559
    Abstract: A method of performing immersion lithography on a semiconductor wafer is provided. The method includes providing a layer of resist onto a surface of the semiconductor wafer. Next, an edge-bead removal process spins the wafer at a speed greater than 1000 revolutions per minute and dispenses solvent through a nozzle while the wafer is spinning. Then, the resist layer is exposed using an immersion lithography exposure system.
    Type: Grant
    Filed: January 24, 2006
    Date of Patent: April 6, 2010
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu Chang, C. C. Ke, Vincent Yu
  • Publication number: 20100075263
    Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing either a water-soluble polymer and an amide group-containing monomer or a water-soluble polymer which contains at least (meth)acrylamide as a monomeric component. Also disclosed is a method of forming fine-line patterns using any one of said over-coating agents. According to the invention, the thermal shrinkage of the over-coating agent for forming fine patterns in the heat treatment can be extensively increased, and one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices.
    Type: Application
    Filed: November 23, 2009
    Publication date: March 25, 2010
    Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
  • Publication number: 20100068651
    Abstract: A developing or processing solution can be used to provide flexographic relief printing plates. This processing solution comprises dipropylene glycol dimethyl ether (DME) and optionally one or more alcohols or other co-solvents. The processing solution is used to remove non-polymerized material after imaging while leaving polymerized material in a relief image.
    Type: Application
    Filed: August 21, 2009
    Publication date: March 18, 2010
    Inventor: David C. Bradford
  • Patent number: 7678532
    Abstract: The present invention provides a method of processing a substrate, comprising a reflow process for forming a desired pattern by dissolving a resist pattern, whereby occurrence of defectives, such as disconnection, can be prevented, and a pattern having an appropriate uniformity can be formed efficiently on each predetermined area desired to be masked. From a photoresist pattern 206 including thicker film portions and thinner film portions, the thinner film portions are removed by a re-developing process. Next, the photoresist so formed by the re-developing process on a backing layer 205 is dissolved such that it passes through a stepped portion 205a formed at each edge portion 205b of the backing layer 205, thereby masking a predetermined area Tg.
    Type: Grant
    Filed: March 1, 2007
    Date of Patent: March 16, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Yutaka Asou, Masatoshi Shiraishi
  • Publication number: 20100040972
    Abstract: A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
    Type: Application
    Filed: October 13, 2009
    Publication date: February 18, 2010
    Applicant: FUJIFILM Corporation
    Inventors: Shinji TARUTANI, Hideaki Tsubaki, Kazuyoshi Mizutani, Kenji Wada, Wataru Hoshino
  • Publication number: 20100040971
    Abstract: A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
    Type: Application
    Filed: October 13, 2009
    Publication date: February 18, 2010
    Applicant: FUJIFILM Corporaion
    Inventors: Shinji TARUTANI, Hideaki TSUBAKI, Kazuyoshi MIZUTANI, Kenji WADA, Wataru HOSHINO
  • Patent number: 7662539
    Abstract: The present invention provides a resist pattern thickening material which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a phase transfer catalyst. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.
    Type: Grant
    Filed: August 3, 2004
    Date of Patent: February 16, 2010
    Assignee: Fujitsu Limited
    Inventors: Koji Nozaki, Miwa Kozawa
  • Publication number: 20100028817
    Abstract: The present invention provides a resist substrate-treating solution for improving defects on a developed pattern surface, and also provides a resist substrate treatment method employing the treating solution. The resist substrate-treating solution comprises a solvent and a nitrogen-containing or oxygen-containing water-soluble polymer such as a polyamine, a polyol or a polyether. In the treatment method, a developed resist pattern is treated with the resist substrate-treating solution and then washed with pure water.
    Type: Application
    Filed: October 12, 2007
    Publication date: February 4, 2010
    Inventors: Go Noya, Ryuta Shimazaki, Masakazu Kobayashi
  • Publication number: 20100028803
    Abstract: A surface treating agent for resist pattern formation comprises a compound having two or more nucleophilic functional groups in each of the molecules thereof, or its salt, and a solvent.
    Type: Application
    Filed: July 31, 2009
    Publication date: February 4, 2010
    Applicant: FUJIFILM Corporation
    Inventors: Naoya SUGIMOTO, Shinji Tarutani, Sou Kamimura, Kazuto Shimada, Naoyuki Nishikawa, Tomotaka Tsuchimura, Yuko Tada
  • Patent number: 7655481
    Abstract: A method for manufacturing an industrial product encompasses: forming a intermediate product pattern, which implements a part of a intermediate product of the industrial product by a sequence of processes corresponds to a part of a procedure for manufacturing the industrial product; forming an interconnect-changing insulator on the intermediate product pattern; boring sampling contact holes in the interconnect-changing insulator so as to make bare a part of the intermediate product pattern to define sampling sites; delineating evaluation interconnects on the interconnect-changing insulator so that each of the evaluation interconnects can electrically connected to at least one of the sampling sites of intermediate product pattern; and measuring an electrical resistance between subject sampling sites through the evaluation interconnects so as to detect a product defect in the intermediate product pattern.
    Type: Grant
    Filed: January 5, 2006
    Date of Patent: February 2, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Yuuichi Tatsumi
  • Publication number: 20100021700
    Abstract: The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method.
    Type: Application
    Filed: October 12, 2007
    Publication date: January 28, 2010
    Inventors: Go Noya, Ryuta Shimazaki, Masakazu Kobayashi
  • Patent number: 7642043
    Abstract: There is disclosed a rework process for a photoresist film over a substrate having at least an antireflection silicone resin film and the photoresist film over the silicone resin film comprising: at least removing the photoresist film with a solvent while leaving the silicone resin film unremoved; and forming a photoresist film again over the silicone resin film. In this case, the substrate over which the photoresist film is reworked can have an organic film under the silicone resin film. There can be provided a rework process for a photoresist film that can be conducted more easily at lower cost.
    Type: Grant
    Filed: October 10, 2006
    Date of Patent: January 5, 2010
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Takafumi Ueda
  • Patent number: 7638255
    Abstract: The invention relates to a reaction development patterning process wherein a photo resist layer masked by a desired pattern is irradiated using ultraviolet light and this layer is subsequently washed using a solvent solution containing alkali characterized by said photo resist layer comprising a condensation type polymer containing in the main chain carbonyl groups (C?O) bonded to hetero atoms and a photo acid generating agent and said alkali being an amine. This reaction development patterning process is characterized by being able to use as a photo resist target resins containing bonds having low reactivity toward nucleophilic reagents, for example, condensation type polymers containing any one of bonds such as carbonate, ester, urethane and amide.
    Type: Grant
    Filed: October 4, 2002
    Date of Patent: December 29, 2009
    Assignee: Yokohama TLO Company, Ltd.
    Inventors: Masao Tomoi, Takafumi Fukushima, Hiroshi Itatani
  • Patent number: 7638268
    Abstract: There is disclosed a rework process for a photoresist film over a substrate having at least a first antireflection silicone resin film and the photoresist film over the first silicone resin film comprising: at least removing the photoresist film with a solvent while leaving the first silicone resin film unremoved; forming a second antireflection silicone resin film over the first silicone resin film; and forming a photoresist film again over the second silicone resin film. There can be provided a rework process for a photoresist film that can be conducted more easily at lower cost and provide more certainly an excellent resist pattern.
    Type: Grant
    Filed: November 9, 2006
    Date of Patent: December 29, 2009
    Assignee: Shin-Estu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Takafumi Ueda
  • Patent number: 7625688
    Abstract: The present invention provides a resist pattern thickening material and the like which can thicken a resist pattern and form a fine space pattern. The resist pattern thickening material contains: a resin; a crosslinking agent; and at least one type selected from cationic surfactants, amphoteric surfactants, and non-ionic surfactants selected from alkoxylate surfactants, fatty acid ester surfactants, amide surfactants, alcohol surfactants, and ethylene diamine surfactants. In a process for forming a resist pattern of the present invention, after a resist pattern is formed, the thickening material is applied onto a surface of the pattern. A process for manufacturing a semiconductor device of the present invention includes: after forming a resist pattern on an underlying layer, applying the thickening material on a surface of the pattern so as to thicken the pattern; and a step of patterning the underlying layer by etching by using the pattern.
    Type: Grant
    Filed: November 22, 2005
    Date of Patent: December 1, 2009
    Assignee: Fujitsu Limited
    Inventors: Koji Nozaki, Miwa Kozawa
  • Publication number: 20090280440
    Abstract: A surface treating agent for resist pattern, characterized by containing not only a chemical species having a functional group capable of chemical adsorption to resist pattern and a polymerizable group but also a solvent.
    Type: Application
    Filed: April 30, 2009
    Publication date: November 12, 2009
    Applicant: FUJIFILM CORPORATION
    Inventors: Shinji Tarutani, Hideaki Tsubaki, Naoya Sugimoto
  • Patent number: 7608368
    Abstract: A pattern forming method includes developing a resist film on a main surface of a substrate by flowing a developing solution on the film to form a resist pattern, the developing the film including partitioning the surface into M (?2) regions and determining correction exposure dose for each of the M region, the determining the correction exposure dose including determining a correction exposure dose for an i-th (1?i?M) region so that an actual pattern dimension of a pattern on the i-th region matches a design pattern dimension based on a pattern opening ratio of a pattern to be formed on the substrate, the pattern being located on a region which is further upstream region than the i-th region with respect to an upstream direction of a flow of the solution, and forming the pattern by etching the substrate using the resist pattern as a mask.
    Type: Grant
    Filed: January 31, 2006
    Date of Patent: October 27, 2009
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hideaki Sakurai, Tooru Shibata, Masato Saito, Masamitsu Itoh
  • Patent number: 7608389
    Abstract: Novel photoresist materials, which can be photolithographically processed in biocompatible conditions are presented in this invention. Suitable lithographic scheme for the use of these and analogous resists for biomolecule layer patterning on solid substrates are also described. The processes described enable micropatterning of more than two different proteins on solid substrates without denaturation of the proteins. The preferred resist materials are based on (meth)acrylate copolymers that contain at least one acid cleavable ester group and at least one hydrophilic group such as an alcoholic or a carboxylic group.
    Type: Grant
    Filed: May 30, 2002
    Date of Patent: October 27, 2009
    Assignees: National Centre for Scientific Research Demokritos
    Inventors: Panagiotis Argitis, Konstantinos Misiakos, Sotirios E. Kakabakos, Constantinos D. Diakoumakos
  • Patent number: 7604911
    Abstract: A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.
    Type: Grant
    Filed: December 3, 2007
    Date of Patent: October 20, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Mitsuhiro Hata, Jung-Hwan Hah, Hyun-Woo Kim, Sang-Gyun Woo
  • Patent number: 7595143
    Abstract: A photoresist composition includes about 10 to about 70% by weight of a binder resin including a phenol-based polymer, about 0.5 to about 10% by weight of a photo-acid generator, about 1 to about 20% by weight of a cross-linker, about 0.1 to about 5% by weight of a dye and about 10 to about 80% by weight of a solvent. The photoresist composition may be applied to, for example, a method of manufacturing a TFT substrate.
    Type: Grant
    Filed: August 22, 2006
    Date of Patent: September 29, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-Min Park, Hi-Kuk Lee, Hyoc-Min Youn, Ki-Hyuk Koo, Byung-Uk Kim
  • Patent number: 7592132
    Abstract: In a method of effectively miniaturizing a resist pattern, a super fine pattern-forming method of restricting a film thickness of a crosslinked film and also preventing developing defects is provided using a super fine pattern-forming material which contains a solvent composed of a water-soluble resin, a water-soluble crosslinking agent, and water or a mixing solution of water and a water-soluble organic solvent, and an amine compound-containing developing solution. The amine compound-containing developing solution is preferably a primary amine compound such as polyallylamine, monomethanolamine, and monoethanolamine, a secondary amine compound such as dimethylamine, diethylamine, dimethanolamine, and diethanolamine, a tertiary amine compound such as trimethylamine, triethylamine, trimethanolamine, and triethanolamine, or a quartenary amine compound such as hydrated tetramethylamine.
    Type: Grant
    Filed: August 31, 2005
    Date of Patent: September 22, 2009
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Kiyohisa Takahashi, Yusuke Takano
  • Patent number: 7591270
    Abstract: Process solutions comprising one or more surfactants are used to reduce the number of pattern collapse defects on a plurality of photoresist coated substrates during the manufacture of semiconductor devices.
    Type: Grant
    Filed: September 14, 2006
    Date of Patent: September 22, 2009
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Peng Zhang, Danielle Megan King Curzi, Eugene Joseph Karwacki, Jr., Leslie Cox Barber
  • Publication number: 20090226844
    Abstract: The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.
    Type: Application
    Filed: May 15, 2009
    Publication date: September 10, 2009
    Applicant: FUJITSU LIMITED
    Inventors: Koji Nozaki, Miwa Kozawa, Takahisa Namiki
  • Publication number: 20090208887
    Abstract: A removing solution for photosensitive composition for removal of pigment-containing photosensitive compositions, comprising an alicyclic ketone, an alkylene glycol monoalkyl ether and/or alcohol, and optionally an acetic acid ester. The removing solution has excellent photosensitive composition removing performance.
    Type: Application
    Filed: July 11, 2006
    Publication date: August 20, 2009
    Applicant: SHOWA DENKO K.K.
    Inventors: Masato Kaneda, Kouichi Terao
  • Patent number: 7575844
    Abstract: Composites, methods, and systems for production of multi-color images which are developable at various wavelengths are disclosed and described. The color forming composite can include a first color forming layer having a first polymer matrix, a first color former, and a first developer where the first color former and the first developer can be in separate phases within the first color forming layer; a second color forming layer having a second polymer matrix, a second color former, and a second developer where the second color former and the second developer can be in separate phases within the second color forming layer; and at least one radiation absorber. The radiation absorber can be present in at least one of the first or second color forming layers. Additionally, the first color forming layer can have a first extinction coefficient that is higher than the second extinction coefficient of the second color forming layer.
    Type: Grant
    Filed: April 27, 2007
    Date of Patent: August 18, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Vladek Kasperchik, Susan E. Bailey
  • Patent number: 7569336
    Abstract: In a method of forming a pattern using a composition for removing photoresist, a layer is formed on a substrate, and then a photoresist pattern is formed on the layer. A portion of the layer exposed by the photoresist pattern is etched using the photoresist pattern as an etching mask to form the pattern on the substrate. Then, the photoresist pattern is removed using the composition including hydroxylamine, an alkanolamine-based compound, a morpholine-based compound, a polar solvent, a corrosion preventing agent, and water. The composition may effectively remove a photoresist pattern and etched residues without damaging the substrate and/or the pattern including metal, nitride, oxide and/or metal nitride.
    Type: Grant
    Filed: September 21, 2006
    Date of Patent: August 4, 2009
    Assignee: Ram Technology Co., Ltd.
    Inventors: Jun-Ing Kil, Sok-Ho Yi, Kyong-Hee Kim, Hee Seo, Bon-Wang Koo, Min-Young Kim
  • Patent number: 7563563
    Abstract: The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.
    Type: Grant
    Filed: April 18, 2006
    Date of Patent: July 21, 2009
    Assignee: International Business Machines Corporation
    Inventors: Kuang-Jung J. Chen, Mahmoud Khojasteh, Ranee Wai-Ling Kwong, Margaret C. Lawson, Wenjie Li, Kaushal S. Patel, Pushkara R. Varanasi
  • Patent number: 7556915
    Abstract: An isolated hole in a photoresist layer is formed by surrounding it with additional, somewhat narrower, dummy hole features. The ratio of feature width to resist thickness is adjusted so that, after development, there is no resist on the floor of the isolated (main) hole whereas a reduced, but finite, thickness of resist remains on the floors of the holes derived from the dummy features. The isolated hole may then be used for etching or electroplating the underlying substrate.
    Type: Grant
    Filed: December 8, 2005
    Date of Patent: July 7, 2009
    Assignee: Headway Technologies, Inc.
    Inventor: Laurie Jane Lauchlan
  • Publication number: 20090170037
    Abstract: A composition for removing a photoresist includes a) an amine compound having a cyclic amine and/or a diamine, b) a glycol ether compound, c) a corrosion inhibitor and d) a polar solvent. The composition further includes a stripping promoter. Further disclosed is a method of manufacturing an array substrate using the composition for removing a photoresist.
    Type: Application
    Filed: November 26, 2008
    Publication date: July 2, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-Hyun CHOUNG, Hong-Sick Park, Sun-Young Hong, Bong-Kyun Kim, Byeoung-Jin Lee, Byung-Uk Kim, Jong-Hyun Jeong, Suk-Il Yoon, Sung-Gun Shin, Soon-Beom Huh, Se-Hwan Jung, Doo-Young Jang
  • Patent number: 7553606
    Abstract: Disclosed is a method of forming patterns in semiconductor devices by using photo resist patterns. These methods comprise forming photo resist patterns on a substrate. Inferior patterns are selected among the photo resist patterns. The inferior patterns are eliminated or shrunken by irradiating the selected inferior patterns with an electron beam.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: June 30, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Gun Kang, Jin-Mo Kang, Jae-Ho Lee, Jun-Seop Lee
  • Patent number: 7547503
    Abstract: Provided is a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern with a smaller number of process steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent having a secondary amino group protected by an o-nitrobenzyloxycarbonyl group.
    Type: Grant
    Filed: February 27, 2007
    Date of Patent: June 16, 2009
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshiki Ito, Natsuhiko Mizutani, Takako Yamaguchi, Yasuhisa Inao
  • Publication number: 20090148793
    Abstract: A processing method of a lithographic printing plate precursor includes: exposing imagewise a lithographic printing plate precursor comprising a support on a surface of which at least one of: a hydrophilizing treatment; and an undercoat layer has been provided and an image-recording layer, to cure an exposed area of the image-recording layer; and undergoing developing processing with an aqueous solution having pH of from 2 to 10, wherein the aqueous solution comprises an amphoteric surfactant and an anionic surfactant selected from an anionic surfactant having an aliphatic chain and a total number of carbon atoms included in the aliphatic chain of 6 or more and an anionic surfactant having an aromatic ring and a total number of carbon atoms of 12 or more, and a content of the anionic surfactant is from 0.1 to 3.3% by weight of the aqueous solution.
    Type: Application
    Filed: September 26, 2008
    Publication date: June 11, 2009
    Applicant: FUJIFILM CORPORATION
    Inventors: Keiichi ADACHI, Shigekatsu FUJII, Yoshinori TAGUCHI, Takashi SATO
  • Patent number: 7537879
    Abstract: The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.
    Type: Grant
    Filed: November 22, 2004
    Date of Patent: May 26, 2009
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Francis M. Houlihan, Ralph R. Dammel, Andrew R. Romano, Munirathna Padmanaban, M. Dalil Rahman
  • Publication number: 20090130606
    Abstract: A photoresist developer including a basic aqueous solution containing 0.5˜10 mass % of a particular nonionic surfactant and 0.01-10 mass % of particular ammonium compound, the photoresist developer makes it possible to form a favorable resist pattern with out causing scum even when developing thick photoresists.
    Type: Application
    Filed: June 13, 2006
    Publication date: May 21, 2009
    Inventors: Shunkichi Omae, Seiji Tono, Toshiaki Otani, Yasutaka Natsuka
  • Publication number: 20090104558
    Abstract: Solutions for the treatment of a resist used in the manufacturing of a semiconductor device or masks used in the manufacturing of semiconductor devices are described. Preferably, the solution includes a transition metal organic compound. Furthermore embodiments of modified resists, a process and an intermediate product are described.
    Type: Application
    Filed: October 19, 2007
    Publication date: April 23, 2009
    Inventor: Klaus Elian
  • Patent number: 7514197
    Abstract: The resist according to the present invention includes any one of tetrachloromethyl tetramethoxycalix [4] arene and trichloromethyl tetramethoxycalix [4] arene. The resist including such kind of components is soluble in the solvent having less effect to worsen a working environment, namely, ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate and 2-heptanone. It can be developed by tetra-methyl ammonium hydroxide in addition to the above mentioned solvent. By exposing this resist by electronic ray, high resolution of 8 nm is attained, and by using this resist as a mask, various materials can be formed into a hyperfine shape. According to such kind of resist, a photosensitive resist material which has high resolution and solvable to solvents having less effect to worsen the working environment and can be developed by the solvents, a exposure method using it, and a hyperfine processing method using it are provided.
    Type: Grant
    Filed: September 4, 2003
    Date of Patent: April 7, 2009
    Assignees: NEC Corporation, Tokuyama Corporation
    Inventors: Yukinori Ochiai, Masahiko Ishida, Junichi Fujita, Takashi Ogura, Junji Momoda, Eiji Oshima
  • Patent number: 7510816
    Abstract: A resist composition is provided comprising a polysiloxane, a specific acid generator, a nitrogen-containing organic compound, and a solvent. The resist composition exerts high-resolution performance without the problem of a T-top profile and is suited for the bilayer resist process using ArF exposure.
    Type: Grant
    Filed: October 4, 2005
    Date of Patent: March 31, 2009
    Assignee: Shin-Estu Chemical Co., Ltd.
    Inventors: Katsuya Takemura, Kazumi Noda, Youichi Ohsawa
  • Patent number: 7510815
    Abstract: A removing solution for photosensitive composition for removal of colored pigment-containing photosensitive compositions, comprising at least one solvent selected from the group consisting of alkylene glycol monoalkyl ether carboxylic acid esters, alkoxycarboxylic acid esters and alicyclic ketones, at least one solvent selected from the group consisting of linear amides, cyclic amides, sulfur-containing compounds and cyclic esters, and if desired an aromatic hydrocarbon having 9 or more carbon atoms. The removing solution for photosensitive composition exhibits excellent photosensitive composition removing performance.
    Type: Grant
    Filed: February 9, 2006
    Date of Patent: March 31, 2009
    Assignee: Showa Denko K.K.
    Inventor: Masato Kaneda
  • Publication number: 20090081592
    Abstract: A fountain solution composition for lithographic printing characterized by comprising at least one acyclic hydrocarbon diol compound, having 6 to 8 carbon atoms in total and two —OH groups, wherein said two —OH groups bind to carbon atoms at 1- and 2-positions, respectively; said fountain solution composition can be used to improve blanket piling.
    Type: Application
    Filed: September 25, 2008
    Publication date: March 26, 2009
    Applicant: FUJIFILM CORPORATION
    Inventors: Akimitsu HAIJIMA, Hideyuki Hattori
  • Publication number: 20090081583
    Abstract: A method for making a lithographic printing plate includes the steps of: (1) providing a heat-sensitive lithographic printing plate precursor including on a support having a hydrophilic surface or which is provided with a hydrophilic layer, a heat-sensitive coating, (2) image-wise exposing the precursor with IR-radiation or heat, and (3) developing the image-wise exposed precursor with an alkaline developing solution including a compound having at least two onium groups. According to the above method, a printing plate is formed with an improved developing latitude or an improved exposure latitude.
    Type: Application
    Filed: March 15, 2007
    Publication date: March 26, 2009
    Applicant: AGFA GRAPHICS NV
    Inventors: Johan Loccufier, Stefaan Lingier, Marc Van Damme
  • Publication number: 20090042149
    Abstract: A rinsing process is performed by supplying a rinsing-liquid onto a substrate with a light-exposed pattern formed thereon and treated by a developing process. The rinsing liquid contains a polyethylene glycol family surfactant or an acetylene glycol family surfactant in a critical micelle concentration or less. Preferably, the surfactant includes a hydrophobic group having a carbon number of larger than 11 and having no double bond or triple bond therein.
    Type: Application
    Filed: July 29, 2008
    Publication date: February 12, 2009
    Inventors: Ryouichirou Naitou, Takeshi Shimoaoki
  • Publication number: 20090017398
    Abstract: A method for making a lithographic printing plate includes the steps of providing a heat-sensitive lithographic printing plate precursor including on a support having a hydrophilic surface or which is provided with a hydrophilic layer, a heat-sensitive coating; image-wise exposing the precursor with IR-radiation or heat; and developing the image-wise exposed precursor with an alkaline developing solution, wherein an anti-sludge agent is present in the precursor or in the developing solution or in the precursor and the developing solution, and wherein the anti-sludge agent is a 5-membered heteroaromatic compound, including a —NH— group wherein the hydrogen is capable of being deprotonated in the alkaline developing solution, selected from the group consisting of an optionally substituted benztriazole, 1,2,3-triazole, tetrazole, or indazole compound. According to the above method, the formation of sludge is inhibited or reduced.
    Type: Application
    Filed: February 21, 2007
    Publication date: January 15, 2009
    Applicant: AGFA GRAPHICS NV
    Inventors: Johan Loccufier, Stefaan Lingier, Frank Vangaever, Mark Lens, Marc Van Damme
  • Patent number: 7476486
    Abstract: A resist composition comprising a fullerene having five phenol derivatives is provided.
    Type: Grant
    Filed: February 15, 2006
    Date of Patent: January 13, 2009
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Takanobu Takeda
  • Patent number: 7476484
    Abstract: Linear crosslinkable polyurethanes obtained from (a) at least one diisocyanate having 2 to 30 carbon atoms, (b) at least one aliphatic or cycloaliphatic diol having 2 to 30 carbon atoms, to whose carbon chain at least one carboxyl group is covalently bonded, and some or all of said carboxyl groups have been esterified with an olefinically unsaturated C3-C8alcohol or with the glycidyl ester of an olefinically unsaturated C3-C8carboxylic acid, and (c) optionally at least one aliphatic or cycloaliphatic diol having 2 to 30 carbon atoms, to whose carbon chain at least one carboxyl group is covalently bonded. The polyurethanes are suitable, alone or as a mixture with other reactive components, for thermal and/or photochemical crosslinking in crosslinkable compositions for the production of mouldings, coatings and in particular solder masks.
    Type: Grant
    Filed: August 4, 2004
    Date of Patent: January 13, 2009
    Assignee: Huntsman Advanced Materials Americas Inc.
    Inventors: Bernhard Sailer, Catherine Schoenenberger, Ottilie Zelenko
  • Patent number: 7473517
    Abstract: A method of creating a resist image on a semiconductor substrate includes exposing a layer of photoresist on the semiconductor substrate and developing the exposed layer of photoresist using a first fluid including supercritical carbon dioxide and a base such as Tetra-Methyl Ammonium Hydroxide (TMAH). Additionally, the developed photoresist can be cleaned using a second fluid including supercritical carbon dioxide and a solvent such as methanol, ethanol, isopropanol, and xylene.
    Type: Grant
    Filed: December 29, 2004
    Date of Patent: January 6, 2009
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu Chang, Burn Jeng Lin, Chi-Wen Liu
  • Patent number: 7470503
    Abstract: A preferred embodiment of the invention provides a semiconductor fabrication process. Embodiments include a method for removing contaminating particles from the surface of the wafer, such as in lithography. Embodiments also provide methods for repairing patterning defects caused by particles. The method comprises forming a resist layer over a substrate and a topcoat layer over the resist layer. The method further includes exposing the resist layer, and developing the resist layer a first time. Preferably, developing the resist layer the first time comprises dissolving a first portion of the topcoat layer in the developing solution. Embodiments further include spinning the substrate, developing the resist layer a second time after spinning the substrate. Preferably, developing the resist layer the second time comprises dissolving a second portion of the topcoat layer.
    Type: Grant
    Filed: April 29, 2005
    Date of Patent: December 30, 2008
    Assignee: Infineon Technologies AG
    Inventor: Stefan Brandl
  • Publication number: 20080305435
    Abstract: Aluminum-containing substrates having an anodic oxide layer are coated with a interlayer by carefully controlling the concentration of phosphonic acid groups in an interlayer polymer and aluminum (+3) concentration in a post-treatment solution. These substrates have improved hydrophilicity, lithographic printing ink repellency, and overall improved printability when used as part of lithographic printing plates.
    Type: Application
    Filed: June 5, 2007
    Publication date: December 11, 2008
    Inventor: Yasushi Miyamoto
  • Publication number: 20080299491
    Abstract: A highly alkaline developer composition includes an alkali silicate, an alkyl sulfate, and a water-soluble or water-dispersible polyhydroxy compound such as glycerin. The developer composition is useful for processing imaged elements to produce lithographic printing plates with reduced etching of the aluminum substrates that have been coated with hydrophilic polymers such as poly(vinyl phosphonic acid) and with minimal sludging in the developer tank.
    Type: Application
    Filed: May 31, 2007
    Publication date: December 4, 2008
    Inventors: Gary R. Miller, Melanie Roth, Eric E. Clark
  • Patent number: 7442493
    Abstract: A printing method comprising: imagewise exposing a lithographic printing plate precursor comprising a support and an image recording layer being removable with a fountain solution or a combination of a printing ink and a fountain solution and loading the exposed lithographic printing plate precursor on a plate cylinder of a printing press, or loading the lithographic printing plate precursor on a plate cylinder of a printing press and imagewise exposing the loaded lithographic printing plate precursor, supplying at least a fountain solution comprising a compound represented by the formula (I) defined herein to the exposed lithographic printing plate precursor so as to remove an unexposed area of the image recording layer; and performing printing.
    Type: Grant
    Filed: October 6, 2005
    Date of Patent: October 28, 2008
    Assignee: Fujifilm Corporation
    Inventors: Koji Sonokawa, Kuniharu Watanabe