Abstract: Methods for forming device structures on a wafer are provided. One method includes transferring approximately an inverse of patterned features formed in a positive resist layer on the wafer to a device material on the wafer to form the device structures in the device material. Another method includes transferring approximately an inverse of patterned features formed in a sacrificial layer on the wafer to a device material on the wafer to form the device structures in the device material.

Abstract: A method for electroless plating of metal on a laser-patterned substrate. A substrate is provided on which both a thermal imaging layer and catalytic layer are deposited. On exposure to a laser beam, sufficient levels of radiation are converted to heat in the thermal imaging layer to render the exposed regions of the adjacent catalytic layer inactive. The laser-patterned substrate is then exposed to a reaction solution which initiates the growth of a metal film on the unexposed regions of the catalytic layer.

Abstract: A method of making micro-structure devices by coating a first layer of resist (12) on a substrate (10). A pattern is created on the substrate by radiation induced thermal removal of the resist.

Abstract: A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line.

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 ?/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

Abstract: Patterning a surface, comprising at least one feature having silicon coupled to a substrate, is described herein. In one embodiment a method is described for patterning a surface which comprises at least one feature having silicon and at least one feature having carbon coupled to a substrate. The surface is coated with 3-(trimethoxysilyl)propyl methacrylate, and a photoresist is applied the 3-(trimethoxysilyl)propyl methacrylate coated surface. The photoresist is imaged and the surface is etched. The photoresist is then removed.

Abstract: According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.

Abstract: A substrate processing method according to the present invention is to be applied for stripping and removing, from the surface of a substrate, a resist no longer required. According to the substrate processing method, a resist stripping liquid is supplied to the center portion of the surface of a substrate held by a substrate holding unit. An organic solvent liquid is supplied to the peripheral edge portion of the surface of the substrate held by the substrate holding unit.

Abstract: Novel, poison-blocking compositions and methods of using those compositions to form poison-blocking layers are provided. The compositions comprise a typical composition used in microlithographic processes, but with a poison-blocking additive included in that composition. The preferred additive is a compound comprising one or more blocked isocyanates. Upon heating to certain temperatures, the blocking group is released from the isocyanate, leaving behind a moiety that is highly reactive with the poisonous amines generated by typical dielectric layers.

Abstract: A method of selectively removing a sacrificial material on a substrate is described. The method comprises forming a sacrificial layer on a substrate. Thereafter, the sacrificial layer is selectively decomposed at a temperature less than the temperature required to thermally decompose the sacrificial layer by selectively exposing the sacrificial layer to UV radiation.

Abstract: A board interconnection structure having a first printed wiring board in which a first conductive circuit is arranged on a first insulating layer, the first conductive circuit having, on an end portion thereof, a first connection terminal in which an upper surface width is narrower than a bottom surface width; a second printed wiring board in which a second conductive layer having a second connection terminal is arranged on a second insulating layer; and a connection layer that forms fillets along longitudinal side surfaces of the first connection terminal, and interconnects the first connection terminal and the second connection terminal. The first connection terminal may have a projection portion.

Abstract: A photosensitive material includes a support and an emulsion layer containing a silver salt emulsion, the photosensitive material is capable of forming a conductive metal film by exposing and developing the emulsion layer, wherein the emulsion layer has a swelling rate of 150% or more.

Abstract: A method of reworking a semiconductor substrate and a method of forming a pattern of semiconductor device using the same without damage to an organic anti-reflective coating (ARC) is provided. The method of reworking a semiconductor substrate includes forming a photoresist pattern on a substrate having the organic ARC formed thereon. An entire surface of the substrate having the photoresist pattern formed thereon may be exposed when a defect is present in the photoresist pattern. The entire-surface-exposed photoresist pattern may be removed by performing a developing process without damage to the organic ARC.

Abstract: The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.

Abstract: An apparatus includes a substrate and a photoresist material structure arranged adjacent to the substrate so that a cavity is formed between the substrate and the photoresist material structure. The cavity has an opening. The photoresist material structure includes a frame portion disposed on a main side of the substrate and a cap portion spanning over a part of the main side of the substrate at a distance to the main side. The cap portion is formed in the first photoresist layer and the frame portion is formed in the second photoresist layer.

Abstract: A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.

Abstract: In the present invention, a plurality of heat treatment plates are provided side by side in a linear form on a base of a heat treatment apparatus in a coating and developing treatment system. In the heat treatment apparatus, three transfer member groups are provided which transfer a substrate in zones between adjacent heat treatment plates. At the time when performing a pre-baking treatment in the heat treatment apparatus, the substrate is transferred in order to the heat treatment plates at the same temperature, whereby the heat treatment is dividedly performed on the heat treatment plates. According to the present invention, substrates are subjected to heat treatment along the same route, so that the thermal histories are made uniform among the substrates.

Abstract: This invention relates to a composition used as a developer that contains a surfactant to improve the developing of photoresist, which may contain at least 50 mol % of monomers containing carboxylic acid. The present invention is also a process for the use of the composition.

Abstract: A method of producing a high-quality product without damaging the physical properties of a pattern to be formed by a rinsing process based on a principle totally different from that for a conventional pattern collapse preventing method. A method for forming a resist pattern by subjecting a photo-resist layer provided on a substrate to image-forming exposure and then developing the resultant layer, wherein the resist pattern is formed, after the developing process, by the process of reducing a contact angle with respect to a contact liquid on the surface of the resist pattern to up to 40 degrees, then by the process of increasing it to at least 70 degrees, and further by drying it.

Abstract: A method and a structure. The structure includes: a solid core comprising a first photoresist material, the core having a bottom surface on a substrate, a top surface and opposite first and second side surfaces between the top surface and the bottom surface; and a shell comprising a second photoresist material, the shell on the top surface of the substrate, the shell containing a cavity open to the top surface of the substrate, the shell formed over the top surface and the first and second side surfaces walls of the core, the core completely filling the cavity. The core is stiffer than the shell. The method includes: forming the core from a first photoresist layer and forming the shell from a second photoresist layer applied over the core. The core may be cross-linked to increase its stiffness.

Abstract: Polymers, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary polymer, among others, includes, a photodefinable polymer having a sacrificial polymer and a photoinitiator.

Abstract: The present invention provides a resist substrate treating solution and a method for pattern formation using that treating solution, and thereby problems such as foreign substances on the substrate surface, pattern collapse and pattern roughness can be easily solved at the same time. The treating solution comprises water and an alkylene oxide adduct of a primary amine having a hydrocarbon group of 11 to 30 carbon atoms or of ammonia. The method for pattern formation according to the invention comprises a step of treating the developed pattern with that treating solution.

Abstract: In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.

Abstract: A coating and developing system that includes two rotating members having parallel horizontal axes of rotation and disposed longitudinally opposite to each other, a carrying passage forming mechanism extended between the rotating members to form a carrying passage, and capable of moving along an orbital path to carry a wafer supported thereon, a sending-in transfer unit disposed at the upstream end of the carrying passage, a sending-out transfer unit disposed at the downstream end of the carrying passage, a developer pouring nozzle for pouring a developer onto the wafer, a cleaning nozzle for pouring a cleaning liquid onto the wafer, and a gas nozzle for blowing a gas against the wafer. The developer pouring nozzle, the cleaning nozzle, and the gas nozzle are arranged in a direction in which the wafer is carried along the carrying passage between the upstream and the downstream end of the carrying passage.

Abstract: A self assembly step for the manufacture of an electronic component comprising, e.g., a semiconductor chip or semiconductor array or wafer comprises forming a block copolymer film placed on a random copolymer film substrate operatively associated with the electronic component and the block copolymer film wherein the surface energy of the random copolymer film is tailored by use of a photolithographic or chemical process prior to the self assembly step. By prior deterministic control over regional surface properties of the random copolymer film, domains of the block copolymer film form only in predefined areas. This approach offers simplified processing and a precise control of regions where domain formation occurs. Selective removal of some of the domains allows for further processing of the electronic component.

Abstract: There are provided a surface-treating agent containing a specific compound having an amino group and an aromatic ring as a surface-treating agent for a freezing process for chemically treating a first resist pattern used in a freezing process of chemically treating and thereby qualitatively changing the first resist pattern so as not to dissolve in a second resist solution in order to form a second resist film on the first resist pattern and form a second resist pattern after the first resist pattern is formed on a first resist film, wherein the surface-treating agent performs a chemical treatment on the first resist pattern to satisfy the requirements that the first resist pattern does not dissolve in the second resist solution, the dimension of the first resist pattern is not changed, and the first resist pattern and the second resist pattern have the same dry etching resistance; and a pattern forming method using the surface-treating agent.

Abstract: The invention includes methods of fabricating integrated circuitry and semiconductor processing polymer residue removing solutions. In one implementation, a method of fabricating integrated circuitry includes forming a conductive metal line over a semiconductor substrate. The conductive line is exposed to a solution comprising an inorganic acid, hydrogen peroxide and a carboxylic acid buffering agent. In one implementation, a method of fabricating integrated circuitry includes forming an insulating layer over a semiconductor substrate. A contact opening is at least partially formed into the insulating layer. The contact opening is exposed to a solution comprising an inorganic acid, hydrogen peroxide and a carboxylic acid buffering agent. In one implementation, a semiconductor processing polymer residue removing solution comprises an inorganic acid, hydrogen peroxide and a carboxylic acid buffering agent. Other aspects and implementations are contemplated.

Abstract: A method for making printed circuits and printed circuit boards which includes coating a non-metallized substrate and plating an image of a desired circuit design directly onto the coated substrate without the need to image the circuit design on an intermediate silver halide polyester film or diazo and utilizing existing imaging, developing and etching subtractive techniques in conventional printed circuit board processing.

Abstract: This process for producing a resist pattern includes: the step of laminating (a) a support having an upper surface on which copper exists, (b) an inorganic substance layer consisting of an inorganic substance supplied from an inorganic substance source, and (c) a photoresist layer consisting of a chemically amplified type positive photoresist composition, to obtain a photoresist laminate, the step of selectively irradiating active light or radioactive rays to said photoresist laminate, and the step of developing said (c) photoresist layer together with said (b) inorganic substance layer to form a resist pattern.

Abstract: A photoresist residue removal composition is provided. The photoresist residue removal composition essentially contains glycolic and water, to which a pH control agent and/or a cleanability improver is selectively added.

Abstract: A plate surface treatment agent for a lithographic printing plate is provided that includes a vinyl copolymer containing a monomer unit having at least one group selected from the group consisting of a phosphonic acid group, a phosphoric acid group, a carboxylic acid group, and a salt of these groups and a monomer unit having at least one group or structure selected from the group consisting of a sulfonic acid group, a salt thereof, an amide group, and a betaine structure. There is also provided a method for treating a lithographic printing plate that includes a step of imagewise exposing a lithographic printing plate precursor, a step of processing using a developer, and a step of carrying out a plate surface treatment using the plate surface treatment agent for a lithographic printing plate.

Abstract: A photosensitive composition comprising (A) a resin that is decomposed by the action of an acid to increase solubility in an alkali developing solution, (B) a compound that generates an acid upon irradiation of an actinic ray or radiation, and (C1) a compound having a molecular weight of 1,000 or less and containing an aliphatic ring and an aromatic ring, and a photosensitive composition comprising (A) a resin that is decomposed by the action of an acid to increase solubility in an alkali developing solution, (B) a compound that generates an acid upon irradiation of an actinic ray or radiation, and (C2) a resin containing a hydroxystyrene unit; and a pattern forming method using these photosensitive composition.

Abstract: A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1), wherein R1 represents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more R1s may be the same or different and two or more Xs may be the same or different.

Abstract: The present invention relates to an aqueous coating composition for coating a photoresist pattern, comprising a polymer comprising at least one unit with an alkylamino group, where the unit has a structure (1), where, R1 to R5 are independently selected from hydrogen and C1 to C6 alkyl, and W is C1 to C6 alkyl. The invention also relates to a process for imaging a photoresist layer using the present composition.

Abstract: A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a fluorinated norbornane group, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

Abstract: A substrate processing method of a substrate provided with an anti-reflective coating which extends to or beyond a peripheral edge of the substrate is disclosed. The method includes removing a portion of the anti-reflective coating adjacent to and around a periphery of the substrate using a back-side removal process, depositing a layer of radiation sensitive material onto the anti-reflective coating, depositing a top-coat layer onto the layer of radiation sensitive material, and simultaneously removing a portion of the layer of radiation sensitive material and a portion of the top-coat layer from around an area adjacent to the periphery of the substrate using a top-side removal process.

Abstract: A composition for removing a photoresist pattern includes about 5 percent by weight to about 20 percent by weight of an aminoethoxy ethanol, about 2 percent by weight to about 10 percent by weight of a polyalkylene oxide, about 10 percent by weight to about 30 percent by weight of a glycol ether compound, and a remainder of an aprotic polar solvent including a nitrogen. Thus, the photoresist pattern can be easily removed from a substrate, thereby improving the removing ability of the composition. In addition, a residual amount of the photoresist pattern may be minimized, thereby improving the reliability of removing the photoresist pattern.

Abstract: The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products.

Abstract: To overcome the limitations to development of photosensitive layers in a lithography process using a light source such as KrF, ArF, VUV, EUV, E-beam, ion beam, etc., and a patterning process of a large circuit board or a bending substrate, the invention provides a method for manufacturing a semiconductor device in which the photosensitive layer comprises a thermal acid generator that is reacted with heat to form an acid, and a masking process in a lithography process using a light source is performed as a heat conduction process using a thermally conductive pattern so that a patterning process is performed easily without limiting the size and shape of a semiconductor substrate.

Abstract: The present invention provides a process for producing a photosensitive resin plate or relief printing plate having a recessed and projected pattern, which comprises the steps of: making a liquid containing an ink-repellent component (A) and a curing component (B) attach to the plate surface of the photosensitive resin plate or relief printing plate having a recessed and projected pattern prior to the post-treatment step or during the post-treatment step, wherein the ink-repellent component (A) comprises at least one compound selected from the group consisting of silicon-based compounds, fluorine-based compounds and paraffin-based compounds, and provides a treatment liquid which is suitable for the process for producing the photosensitive resin plate or the relief printing plate having the recessed and projected pattern.

Abstract: A gum solution is provided which comprises a film-forming hydrophilic polymer or surfactant, and a salt formed by reaction of an acid, selected from phosphoric acid and phosphorous acid, with a di- or tri-alkanolamine. The gum solution is suitable for developing and gumming a lithographic photopolymer printing plate precursor. Also provided is a method for preparing a lithographic printing plate wherein this gum solution is used, and whereby printing plates are obtained which exhibit an improved clean-out performance.

Abstract: Provided are: a resist surface modifying liquid which is used as a surface treatment liquid of a resist film prior to a post exposure baking (PEB) step, and which can inhibit occurrence of defects of the resist film by reducing water repellency; and a method for forming a resist pattern using the same. A resist surface modifying liquid which is used as a surface treatment liquid prior to a post exposure baking (PEB) step of a resist film, the resist surface modifying liquid containing an acidic compound, and at least one of an alcohol-based solvent represented by a certain general formula and an ether-based solvent represented by a certain general formula.

Abstract: A mask having features formed by self-organizing material, such as diblock copolymers, is formed on a partially fabricated integrated circuit. Initially, a copolymer template, or seed layer, is formed on the surface of the partially fabricated integrated circuit. To form the seed layer, diblock copolymers, composed of two immiscible blocks, are deposited in the space between copolymer alignment guides. The copolymers are made to self-organize, with the guides guiding the self-organization and with each block aggregating with other blocks of the same type, thereby forming the seed layer. Next, additional, supplemental diblock copolymers are deposited over the seed layer. The copolymers in the seed layer guide self-organization of the supplemental copolymers, thereby vertically extending the pattern formed by the copolymers in the seed layer.

Abstract: The present invention provides a plate surface treatment solution comprising a fluorinated polymer containing a perfluoroalkyl group having 7 or less carbon atoms on average to be adhered onto a plate surface of a photosensitive resin printing plate having a concave-convex shape or a relief printing plate. The present invention also discloses a process for producing a photosensitive resin printing plate having a concave-convex shape or a relief printing plate, wherein the process comprises the step of adhering the plate surface treatment solution.

Abstract: Provided are a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern through fewer steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent comprising a 1,2-naphthoquinone-2-diazido-5-sulfonyl group or a 1,2-naphthoquinone-2-diazido-4-sulfonyl group.

Abstract: High silicon-content resin composition that can be used to form thin film thermosets, useful in forming low k dielectric constant materials and as well as hard mask materials with anti-reflective properties for the photolithography industry are disclosed.

Abstract: Compositions, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary composition, among others, includes a polymer and a catalytic amount of a negative tone photoinitiator.

Abstract: A developing solution is provided comprising an aqueous alkali solution, at least one anion selected from a silicate ion, a carbonate ion, a borate ion and a phosphate ion, and at least one cation selected from an ammonium ion, an organic ammonium ion and an alkali metal ion. The aqueous alkali solution may be an aqueous solution of a tetraalkylammonium hydroxide.

Abstract: Disclosed is a positive resist processing liquid composition which is composed of an aqueous solution containing a quaternary ammonium hydroxide represented by the following general formula (I). In the formula, R1 and R3 independently represent a methyl group, and R2 represents an alkyl group having 12-18 carbon atoms.

Abstract: Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.