Abstract: A method for manufacturing a semiconductor device effectively removes a solvent of a bottom antireflective coating film is using a porous material so as to prevent acid in a photoresist film from reacting with the solvent during a post exposure baking (PEB) process. The method includes forming a pattern formation layer on a wafer, forming a bottom antireflective coating film containing a solvent, on the pattern formation layer, arranging a porous material layer in contact with the bottom antireflective coating film, absorbing the solvent contained in the bottom antireflective coating film using the porous material layer, forming photoresist film patterns on predetermined portions of the bottom antireflective coating film, etching the bottom antireflective coating film using the photoresist film patterns as masks, and etching the pattern formation layer using the photoresist film patterns as masks to form patterns.

Abstract: The use of a positive resist composition that includes a resin with a specific structure improves the resolution and yields a resist pattern with a favorable shape. In addition, when a resist layer is formed on either a magnetic film or a metallic oxidation prevention film formed on the magnetic film, the layer is less prone to tailing and undercutting phenomena.

Abstract: The invention includes methods of fabricating integrated circuitry and semiconductor processing polymer residue removing solutions. In one implementation, a method of fabricating integrated circuitry includes forming a conductive metal line over a semiconductor substrate. The conductive line is exposed to a solution comprising an inorganic acid, hydrogen peroxide and a carboxylic acid buffering agent. In one implementation, a method of fabricating integrated circuitry includes forming an insulating layer over a semiconductor substrate. A contact opening is at least partially formed into the insulating layer. The contact opening is exposed to a solution comprising an inorganic acid, hydrogen peroxide and a carboxylic acid buffering agent. In one implementation, a semiconductor processing polymer residue removing solution comprises an inorganic acid, hydrogen peroxide and a carboxylic acid buffering agent. Other aspects and implementations are contemplated.

Abstract: A rinsing process is performed by supplying a rinsing liquid onto a substrate with a light-exposed pattern formed thereon and treated by a developing process. The rinsing liquid contains a polyethylene glycol family surfactant or an acetylene glycol family surfactant in a critical micelle concentration or less. Preferably, the surfactant includes a hydrophobic group having a carbon number of larger than 11 and having no double bond or triple bond therein.

Abstract: The present invention provided an improvement to reduce an edge roughness during forming a small and fine pattern. Such and objective is to accomplish that after patterning a resist film, a coating film is formed on the resist film, so as to intermix the resist film material with the coating film material at the interface therebetween to reduce the edge roughness. There is provided a resist pattern-improving material, comprising: (a) a water-soluble or alkali-soluble composition, comprising: (i) a resin, and (ii) a crosslinking agent. Alternatively, The resist pattern-improving material, comprising (a) a water-soluble or alkali-soluble composition, comprising: (i) a resin, and (ii) a nonionic surfactant. According to the present invention, a pattern is prepared in the step, comprising: (a) forming a resist pattern; and (b) coating the resist pattern-improving material on the surface of the resist pattern.

Abstract: Flexographic printing plates are produced by exposing the photopolymer plates to a light source and washing out (developing) the masked out, non-exposed areas with a solvent. The invention provides substituted benzene solvents suitable for use in the development of photopolymer printing plates. The solvents, which include substituted benzene alone or mixed with co-solvents and/or non-solvents, are effective in developing a large number of different photopolymer printing plates and can produce images superior to those obtained with commercially available solvents currently used in such applications.

Abstract: A method of removing photoresist is provided. In the whole process of removing the photoresist, plasma is not used. Instead, a first solution is used in a first removal step to remove a photoresist layer. Then, a second solution is used in a second removal step to completely remove the photoresist layer. The first solution and the second solution have different polarities, and the polarity of the first solution is large than that of the second solution.

Abstract: A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

Abstract: A resist developer capable of forming a high resolution resist pattern with good shape and little film thinning is provided, together with a resist pattern formation method using such a developer. The resist developer is an aqueous solution comprising an ammonium hydroxide represented by a general formula (I): R1nR24-nN+.OH? wherein R1 is a lower alkyl group in which the number of carbon atoms is A, R2 is a lower alkyl group in which the number of carbon atoms is B, A<B, and n is an integer from 1 to 3.

Abstract: In the method wherein a resist pattern is miniaturized effectively by applying a fine pattern forming material, the fine pattern forming material used for providing with a cured coated layer pattern, wherein development defects are reduced by water development is offered, wherein the fine pattern forming material comprises a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solution consisting of water and a water-soluble organic solvent, and further comprises an amine compound.

Abstract: A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

Abstract: A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.

Abstract: Disclosed are a developer for an imagewise exposed light sensitive planographic printing plate material and a process of manufacturing a planographic printing plate employing the developer, wherein the developer is an aqueous solution with a pH at 25° C. of from 3.0 to 9.

Abstract: A method, tool, and machine for hardening a photoresist image while the photoresist image is immersed in a liquid.

Abstract: A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has a repeating unit represented by wherein, R1 is hydrogen or methyl group, and R2 is a substituted or non-substituted alky group of C1 to C5. The composition for forming the organic anti-reflective coating layer includes the polymer having the repeating unit represented by above Formulas; a light absorber; and a solvent.

Abstract: A pattern forming method comprises forming a photosensitive resin film on a substrate, exposing the photosensitive resin film, forming a pattern of the photosensitive resin film by supplying a developing solution to the photosensitive resin film, and slimming to remove a surface layer of the pattern by causing the pattern to contact with an activated water.

Abstract: The present invention provides a resist pattern thickening material which can thicken a resist pattern to be thickened regardless of a material or a size thereof so as to form a fine space pattern, exceeding an exposure limit of exposure light. The resist pattern thickening material comprises: a resin; a crosslinking agent; and a nitrogen-containing compound. In a process for forming a resist pattern of the present invention, the resist pattern thickening material is applied on a surface of a resist pattern to be thickened, thereby forming a resist pattern. A process for manufacturing a semiconductor device of the present invention includes: applying the thickening material on a surface of a resist pattern to be thickened which is formed on an underlying layer, so as to thicken the resist pattern to be thickened and form a resist pattern; and patterning the underlying layer by etching using the resist pattern.

Abstract: The present invention provides a resist pattern thickening material which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a polyhydric alcohol. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Abstract: One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of anmonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask.

Abstract: To provide a developer composition for resists, capable of improving dimensional controllability of a resist pattern. The developer composition for resists comprises an organic quaternary ammonium base as a main component, said developer composition further comprising an anionic surfactant represented by the following general formula (I), and SO42?, the content of S42? being from 0.01 to 1% by mass. In the formula, at least one of R1 and R2 represents an alkyl or alkoxy group having 5 to 18 carbon atoms and the other one represents a hydrogen atom, or an alkyl or alkoxy group having 5 to 18 carbon atoms, and at least one of R3, R4 and R5 represents an ammonium sulfonate group or a sulfonic acid-substituted ammonium group and the others represent a hydrogen atom, an ammonium sulfonate group or a sulfonic acid-substituted ammonium group.

Abstract: A developing agent contains a toner particle having a substantially spherical polymer phase selected from any one of acrylic bases, styrene bases or styrene-acrylic bases and a polyester based resin phase to coat the polymer phase such that at least a part thereof is exposed. It becomes possible to improve the low temperature fixability, by using the developing agent.

Abstract: A dampening water composition for a lithographic printing comprising an adduct compound of ethylene oxide and propylene oxide to ethylenediamine, which compound has a weight-average molecular weight of from 500 to 1500. The dampening water composition can be used in printing job without requiring a high degree of skill, and is capable of replacing a conventional dampening water composition using isopropyl alcohol, in various continuous water supply-type printing machines.

Abstract: A method for carrying out positive tone lithography with a carbon dioxide development system is carried out by: (a) providing a substrate, the substrate having a polymer resist layer formed thereon, (b) exposing at least one portion of the polymer resist layer to radiant energy causing a chemical shift to take place in the exposed portion and thereby form at least one light field region in the polymer resist layer while concurrently maintaining at least one portion of the polymer layer unexposed to the radiant energy to thereby form at least one dark field region in the polymer resist layer; (c) optionally baking the polymer resist layer; (d) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system comprising a polar group, under conditions in which the at least one light field region is preferentially removed from the substrate by the carbon dioxide solvent system as compared to the at least one dark field region; wherein the carbon dioxide solvent system comprises a first p

Abstract: Negative-working imageable elements can be imaged and then developed using a lower pH organic-based single-phase developer that is less toxic and corrosive and that can be more readily disposed of after use. This developer has a pH less than 12 and comprises a) an amphoteric surfactant comprising a nitrogen-containing heterocycle, b) an amphoteric surfactant having two or more nitrogen atoms, or c) an amphoteric surfactant of a) and an amphoteric surfactant of b).

Abstract: A device manufacturing method for a substrate of a batch of substrates includes conveying the substrate to an exposing position of a lithographic apparatus, exposing the substrate at the exposing position to a beam of radiation of the lithographic apparatus, and conveying the exposed substrate from the exposing position toward a processing position configured to process the exposed substrate, wherein a start time for the exposing of the substrate is varied so as to control that a time interval between the end of the exposing of the substrate at the exposing position and the start of processing of the substrate at the processing position for the substrate is substantially the same as for each other substrate in the batch of substrates.

Abstract: A developing agent comprises first and second resin fine particles containing a colorant and a release agent and different in weight average molecular weight, and a concentration of the release agent which is softened at a low temperature in the second resin fine particles having the high weight average molecular weight is higher than a concentration of the release agent in the first resin fine particles, whereby thermal properties dependent on the weight average molecular weight of the resin fine particles are made uniform and fixability of the developing agent is improved.

Abstract: A dynamic puddle developing process is disclosed. First, a semiconductor substrate having a photoresist disposed thereon is provided, in which the photoresist has been exposed. Next, a developer is disposed on the surface of the photoresist and a first static puddle process is performed to maintain the semiconductor substrate in a static status within a first time interval. A rotating puddle process is performed thereafter to generate a first rotating speed for the semiconductor substrate, and a second static puddle process is performed to maintain the semiconductor substrate in a static status within a second time interval. Next, a rinsing process is performed to rinse the semiconductor substrate and remove the developer from the surface of the photoresist.

Abstract: A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has repeating units represented by wherein, R is a substituted or non-substituted alky group of C1 to C5.

Abstract: An exemplary method for manufacturing photoresist includes the steps of: adding a metal salt into an aqueous solution, whereby the aqueous solution contains metallic ions (211); adding a sulfide containing sulfur ions (231) into the aqueous solution; adding a polymerizable surfactant (220) into the aqueous solution thereby forming metallic ion reverse micelles (210) and sulfur ion reverse micelles (230); reacting the metallic ion reverse micelles and the sulfur ion reverse micelles to create monomeric sulfureted metal nanoparticle reverse micelles (240); aggregating the monomeric sulfureted metal nanoparticle reverse micelles to polymeric macromolecular nanoparticles; and doping the polymeric macromolecules nanoparticles into a base material in order to obtain the photoresist having sulfureted metal nanoparticles. A diameter of the nanoparticles is in the range from 1×10?9 meters to 1×10?7 meters.

Abstract: Disclosed is a method of processing a light sensitive planographic printing plate material comprising an aluminum support, and provided thereon, a photopolymerizable light sensitive layer containing a polymerizable ethylenically unsaturated compound, a photopolymerization initiator, and a polymer binder, the method comprising the steps of imagewise exposing the light sensitive planographic printing plate material, developing the exposed light sensitive planographic printing plate material with a developer to obtain a planographic printing plate, the developer containing no silicate or containing a silicate in amount of not more than 0.1% by weight in terms of SiO2, and plate processing the resulting planographic printing plate with a plate protecting solution containing a phosphonic acid compound at a temperature of from 40 to 90° C.

Abstract: An imaging device for preparing a printing surface for a printing operation transfers information related to how the printing precursor should be processed to a processor. The processor is automated to make local adjustments according to the information provided. The information can be transferred for each printing precursor or only when changes occur. The transfer is automated.

Abstract: The present invention relates to photoresist compositions for EUV and methods for forming photoresist patterns. More specifically, fine photoresist patterns: of less than 50 nm without collapse are formed with EUV (Extreme Ultraviolet) as an exposure light source by using a negative photoresist composition comprising a melamine derivative and polyvinylphenol.

Abstract: Photoresists and associated processes for microlithography in the extreme, far, and near UV are disclosed. The photoresists in some embodiments comprise (a) a fluorine-containing copolymer comprising a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic and at least one ethylenically unsaturated compound contains at least one fluorine atom covalently attached to an ethylenically unsaturated carbon atom; and (b) at least one photoactive component.

Abstract: Piling due to ink, paper fibers and/or clay fillers occurs frequently during an offset printing process, resulting in the deterioration in print quality and lost manual time due to the necessity to clean the equipment. It has been experimentally found that small quantities of certain high molecular weight polyethylene oxide polymers can alleviate this serious problem. However, the overall effectiveness will depend on the concentration of the total make-up of component in the fountain solution.

Abstract: A method of fabricating photoresist thinner is provided. A photoresist material and a first photoresist thinner are provided. The first photoresist thinner is suitable for thinning the photoresist material. The first photoresist thinner comprises a plurality of first solvents each having a first Hansen parameter. The photoresist material has a second Hansen parameter. A first region is defined according to the first Hansen parameters. A plurality of second solvents is selected according to the first Hansen parameters of the first solvents. Each second solvent has a third Hansen parameters corresponding to at least one of the first solvents. The second solvents are mixed to form a second photoresist thinner. The second photoresist thinner has a fourth Hansen parameter located within the first region. Therefore, the cost of the photoresist thinner can be reduced.

Abstract: The present invention relates to a method for determining an edge profile of a volume of a photoresist after a development process. At first, the volume of the photoresist is divided into cells. A chemical master equation is set up which reflects the stochastic kinetics of chemical reactions proceeding in cells of the volume of the photoresist during the development process. The chemical master equation is solved for a given development time on the basis of a Gillespie algorithm in order to determine developed and non-developed cells of the volume of the photoresist at the end of the development process. Finally, the edge profile of the volume of the photoresist after the development process is determined on the basis of a cluster of non-developed cells.

Abstract: A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system can cope with either of a case where antireflection films are formed and where any antireflection film is not formed. Film forming unit blocks: TCT layer B3, a COT layer B4 and a BCT layer B5, and developing unit blocks: DEV layers B1 and B2, are stacked up in layers in a processing block S2. The TCT layer B3, the COT layer B4 and the BCT layer B5 are used selectively where antireflection films are formed and any antireflection film is not formed. The coating and developing system is controlled by a carrying program and software.

Abstract: The present invention relates to a polymerizable coating composition suitable for the manufacture of printing plates, which may be developable on-press. The coating composition comprises (i) a polymerizable compound and (ii) a polymeric binder comprising polyethylene oxide segments, wherein the polymeric binder is selected from the group consisting of at least one graft copolymer comprising a main chain polymer and polyethylene oxide side chains, a block copolymer having at least one polyethylene oxide block and at least one non-polyethylene oxide block, and a combination thereof. The invention is also directed to an imageable element comprising a substrate and the polymerizable coating composition.

Abstract: A resist film formed on a substrate is coated with a water-repellent protective film and the substrate is subjected to a developing process after the substrate has been processed by an immersion exposure process. The protective film is removed from the substrate after the resist film has been processed by the immersion exposure process, the substrate is processed by a heating process, and then the substrate is subjected to a developing process. The surface of the substrate is cleaned with a cleaning liquid before the protective film is removed and after the substrate has been processed by the immersion exposure process or the surface of the substrate is cleaned with a cleaning liquid after removing the protective film and before the substrate is subjected to the heating process.

Abstract: An image forming method using liquid developers is provided. The method includes a developing step for forming a plurality of monochromatic color images using a plurality of liquid developers of different colors; a transfer step for transferring a plurality of monochromatic color images which correspond to the respective different colors onto a recording medium to form an unfixed color image onto the recording medium; and a fixing step for fixing the unfixed color image onto the recording medium, wherein each of the liquid developers is comprised of an insulation liquid containing an unsaturated fatty acid component and toner particles dispersed in the insulation liquid, and wherein the liquid developers include a magenta liquid developer, and the magenta liquid developer contains an oxidation polymerization accelerator which accelerates an oxidation polymerization reaction of the unsaturated fatty acid component in the fixing step.

Abstract: A method of fabricating a semiconductor device. The method comprises creating a via in a dielectric layer that is formed on a substrate, filling the via, and optionally, the surface of the dielectric layer with a sacrificial material, patterning a first photoresist layer on the sacrificial material to define a trench for the semiconductor device, removing the first photoresist layer without affecting the sacrificial material, repatterning a second photoresist layer on the sacrificial material to define the trench for the semiconductor device, forming the trench, and removing the second photoresist layer and the sacrificial material completely after the trench is formed.

Abstract: The developer of the present invention is used in a method where a water-soluble resin coating layer is applied on a resist pattern formed by the conventional method, and the coating layer is crosslinked by an acid supplied from the resist, and the uncrosslinked area in the coating layer is dissolved and removed with a developer to thicken the resist pattern. This developer comprises an aqueous solution containing at least one surfactant selected from an N-acylsarcosinate, an N-acyl-N-methylalaninate, an N-acyltaurinate, an N-acyl-N-methyltaurinate, a fatty acid alkylol amide, and a fatty acid alkylol amide polyoxyethylene adduct.

Abstract: A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where R1 represents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; R2 represents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; R3 represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R4 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perflourinated aliphatic group; R5 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR12 represents OH or at least one acid labile group selected from a tertiary alkyl c

Abstract: The present invention provides methods of imagewise exposing a thermally sensitive composition formed from a nanopaste comprising inorganic nanoparticles, a carrier, and preferably certain polymeric binders. The composition has been applied to a substrate and treated to improve adhesion. Exposure affects the solubility of exposed portions of the applied and treated layer relative to unexposed portions of the applied layer. The imaged layer is then developed on-press with a fountain solution, lithographic ink, or both, to remove the exposed portions or unexposed portions of the layer to form an image in a printing plate.

Abstract: A wash composition that includes a polymeric surfactant and methods for using the wash composition are described herein.

Abstract: The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: <Chemical Formula> wherein, R? and R? individually represent hydrogen or methyl; m represents a number of 1 to 10; and R is selected from the group consisting of straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.

Abstract: A cross-linking polymer for an organic anti-reflective coating that is able to improve the uniformity of an ultra-fine photoresist pattern formed using a photolithography process and an ArF light source with 194 nm wavelength. Organic anti-reflective coatings including the same and a method for forming a photoresist pattern using the same are also disclosed. The disclosed cross-linking polymer is capable of preventing scattered reflection from a bottom film layer, eliminating standing wave effect due to alteration of thickness of the photoresist film, and increasing uniformity of the thickness of photoresist pattern. At the same time, the disclosed cross-linking pattern increases the etching velocity of the organic anti-reflective coating so that it can be easily removed.

Abstract: Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I, its preparation method and an organic anti-reflective coating composition with respect to an ultra-fine pattern formation process of the photoresist for photolithography technique using ArF light source with a wavelength of 193 nm or VUV light source with a wavelength of 157 nm. An organic anti-reflective coating polymer capable of protecting a photoresist from amines in the atmosphere to minimize the post exposure delay effect after exposure to light and, at the same time, enhances notching status, such as, a pattern distortion caused by diffused reflection, and reducing reflection rate to minimize the swing effect. wherein m is an integer ranging from 5 to 5000.

Abstract: A semiconductor manufacturing apparatus includes a liquid supplying section for supplying a liquid onto a stage for holding a wafer on which a resist film is formed; an exposing section for irradiating the resist film with exposing light through a mask with the liquid provided on the resist film; and a removing part for removing, from the liquid, a gas included in the liquid. Thus, the liquid from which the gas has been removed is provided on the resist film, and therefore, foams included in the liquid or formed during the exposure can be removed. Accordingly, exposure abnormality such as diffraction abnormality can be prevented, resulting in forming a resist pattern in a good shape.

Abstract: Polymerizable silicon-containing compounds of formula (1) wherein R1 is hydrogen, halogen or monovalent organic group are polymerized into polymers.