Abstract: An electrophotographic photoreceptor includes a conductive substrate and a photoconductive layer, provided on the conductive substrate, for generating photocarriers upon light radiation. At least part of the photoconductive layer contains and has a plurality of thin microcrystalline semiconductor layers containing silicon as a major component, and at least one element selected from the group consisting of carbon, oxygen, and nitrogen. The adjacent thin microcrystalline semiconductor layers have different element concentrations. The element concentrations are continuously changed near the interfaces of the thin microcrystalline semiconductor layers.

Abstract: A light receiving member has a support and a light receiving layer. The support has an uneven-shaped surface of a plurality of spherical dimples, each dimple having an identical radius of curvature R and an identical width D, wherein the ratio D/R of the width D to the radius of curvature R is from 0.03 to 0.07. The light receiving layer is a multi-layered structure having an outer layer which formed from an amorphous material containing silicon atoms as the main constituent and at least one of hydrogen atoms and halogen atoms. The light receiving layer contains an inner layer of amorphous silicon which also contains germanium and/or tin and hydrogen and/or halogen.The light receiving member, when used with a coherent laser beam as an optical source, acts to prevent the occurrence of an interference fringe pattern during image formation.

Abstract: An electrophotographic photoreceptor is constituted by forming a barrier layer, a photoconductive layer, and a surface layer on an aluminum substrate drum, in the order stated. The photoconductive layer of this electrophotographic photoreceptor has a superlattice layer of a hetero-junction constituted by alternately stacking thin a-Si:H layers and thin .mu.c-SiC:H layers. In this superlattice structure, the optical bandgaps of the respective layers differ from each other, a-Si:H serves as a potential barrier, and .mu.c-SiC:H serves as a potential well. When light is radiated on the photoconductive layer, a large number of photocarriers are generated. The photocarriers having one polarity pass through the barrier by way of a tunneling effect, and propagate in the photoconductive layer.

Abstract: Disclosed is an electrophotosensitive member and its preparing method. The electrophotosensitive member comprises an electrically conductive substrate, a photosensitive layer, and an overcoat layer having a rough surface with convexities and concavities. The number of convexities and concavities are about 500 to 3000 per 1 cm in a linear distance, and the maximum depth difference of the convexities and concavities is about 0.05 to 1.5 .mu.m. The rough surface having the convexities and concavities is formed directly on the overcoat layer. The electrophotosensitive member according to the present invention reduces the friction coefficient of the contacting area between the electrophotosensitive member and a cleaning device, and improves the durability of the overcoat layer and the photosensitive layer.

Abstract: An electrophotographic photoreceptor is constituted by forming a barrier layer, a photoconductive layer, and a surface layer on an aluminum substrate drum, in the order stated. The photoconductive layer of this electrophotographic photoreceptor has a superlattice structure constituted by alternately stacking thin a-SiC:H layers having carbon contents different from each other. In this superlattice structure, the optical bandgaps of the respective layers differ from each other, a-SiC:H having a higher carbon content serves as a potential barrier, and a-SiC:H having a lower carbon content serves as a potential well. When light is radiated on the photoconductive layer, a large number of photocarriers are generated. The photocarriers having one polarity pass through the barrier by way of a tuneling effect, and propagate in the photoconductive layer.

Abstract: An electrophotographic photosensitive member comprises a photosensitive layer on an electroconductive substrate, said photosensitive layer containing a polymer formed from a polymerizable monomer having, in the side chain, an aromatic ring substituted with fluorine atom as the constituent.

Abstract: An electrophotographic photoreceptor is constituted by forming a barrier layer, a photoconductive layer including a charge-generating layer and a charge-transportation layer, and a surface layer on an aluminum substrate drum, in the order stated. The charge-generating layer of this electrophotographic photoreceptor has a superlattice structure of a heterojunction constituted by alternately stacking thin a-Si:H layers and thin .mu.c-SiC:H layers. In this superlattice structure, the optical bandgaps of the respective layers differ from each other, a-Si:H serves as a potential barrier, and .mu.c-SiC:H serves as a potential well. When light is radiated on the charge-generating layer, a large number of photocarriers are generated. The photocarriers having one polarity pass through the barrier by way of a tunneling effect, and propagate in the charge-generating layer. In addition, the charge-transporting layer is formed by a-Si:H or .mu.

Abstract: A light receiving member has a support and a light receiving layer. The support has an uneven-shaped surface of a plurality of spherical dimples formed by the impact of a plurality of rigid true spheres on the surface of the support. Each of the dimples has an identical radius of curvature R and an identical width D, wherein the radio D/R of the width D to the radius of curvature R is from 0.03 to 0.07. The light receiving layer is a multi-layered structure having a free surface which formed from an amorphous material containing silicon atoms as the main constituent, at least one of oxygen atoms, carbon atoms and nitrogen atoms, and at least one of hydrogen atoms and halogen atoms. The light receiving layer contains a layer region which functions as a photosensitive layer.The light receiving member, when used with a coherent laser beam as an optical source, acts to prevent the occurrence of an interference fringe pattern during image formation.

Abstract: This is provided an improved light receiving member having at least a photoconductive layer constituted with A-Si(H,X) series material and a surface layer constituted with A-Si(C,O,N)(H,X) for use in electrophotography, etc. which is characterized in that the atom(C,O,N) is contained in the surface layer in a state that the concentration of the atom(C,O,N) is grown increasingly starting from the position of the interface between the surface layer and the photoconductive layer while leaving a portion corresponding to a refractive index difference (.DELTA.n) [.DELTA.n.ltoreq.0.62] between the refractive index of the surface layer and that of the photoconductive layer which can be disregarded in the image-making process toward the free surface of the surface layer.

Abstract: An electrophotographic photosensitive member having a photosensitive layer on an electroconductive substrate comprises a surface layer containing a fluorine type resin powder and a fluorine type graft polymer.

Abstract: There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a photoconductive layer and a surface layer, the photoconductive layer being formed of an amorphous material containing silicon atoms as the main constituent atoms and at least one kind selected from hydrogen atoms and halogen atoms and the surface layer being formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, and the amount of the hydrogen atoms contained in the surface layer being in the range of 41 to 70 atomic %.

Abstract: The improvements in the light receiving members in which an aluminum material being used as the substrate for use in electrophotography and in other various devices. The improved light receiving member to be provided is characterized in that a buffer layer functioning to improve the bondability between the aluminum substrate and a light receiving layer to be disposed thereon is disposed between the substrate and said light receiving layer.The improved light receiving member is satisfactorily free from various problems due to insufficient bondability between the aluminum substrate and the light receiving layer imposed thereon which are found in the conventional light receiving members.

Abstract: A light-receiving member for electrophotography comprises a substrate and a light-receiving layer provided on the substrate comprising a photoconductive layer exhibiting photoconductivity comprising an amorphous material containing at least one of hydrogen atoms and halogen atoms as the constituent in a matrix of silicon atoms and a surface layer comprising an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms and the constituents, said surface layer being changed in the distribution concentration in the layer thickness direction of the constituent elements such that matching optical gap is obtained at the interface with said photoconductive layer, and the maximum distribution concentration of the hydrogen atoms within said surface layer being 41 to 70 atomic percent.

Abstract: An amorphous silicon photoreceptor for electrophotography having a surface protective layer provided on top of an amorphous silicon photoreceptive layer and has a forbidden band width arranged to progressively increase as it goes from the surface of the photoreceptive layer toward the surface of the surface protective layer. A p type amorphous silicon layer may be provided between the amorphous silicon photoreceptive layer and the surface protective layer.

Abstract: There is provided an improved light receiving member comprising a substrate for electrophotography and a light receiving layer being formed of a first layer composed of an amorphous material containing silicon atoms as the main component and an element for controlling the conductivity, a second layer having a photoconductivity composed of an amorphous material containing silicon atoms as the main component and a third layer composed of an amorphous material containing silicon atoms as the main component and carbon atoms, said third layer being a two-layer structure having a lower layer region of 0.05 to 0.2 .mu.m in thickness with a defect density of less than 8.times.10.sup.18 cm.sup.-3 (ESR signal) and an upper layer region with a defect density of more than 8.times.10.sup.18 cm.sup.-3 (ESR signal) and a volume resistivity of more than 5.times.10.sup.12 .OMEGA..cm.

Abstract: An electrophotographic photosensitive member comprises a conductive substrate, a blocking layer formed on the conductive substrate, a photoconductive layer, formed on the blocking layer and a surface layer formed on the photoconductive layer. The blocking layer is formed from a microcrystalline silicon, which is made a p-type by being heavily doped with an element of Group III of the Periodic Table. The photoconductive layer is formed from an amorphous silicon which is lightly doped with an impurity element, and which is similar in properties to an intrinsic semiconductor. Rectifying contact is formed between the photoconductive layer and the blocking layer so that a depletion layer is formed by that interface toward the interior of the photoconductive layer. By so doing, it is possible to obtain a photosensitive member having a high sensitivity in the range from visible light to near-infrared light.

Abstract: An electrophotographic photosensitive member comprises an electroconductive support and a photosensitive layer laid thereon, the electrophotographic photosensitive member having a surface layer containing fine spherical resin powder.

Abstract: A light receiving member comprises a support and a light receiving layer of a multi-layered structure having at least a photosensitive layer composed of an amorphous silicon, said support having a surface provided with irregularities composed of spherical dimples each of which having an inside face provided with minute irregularities. The light receiving layer may contain a surface layer comprising an outer abrasion-resistant layer and an inner reflection prevention layer, wherein the optical band gap possessed by the surface layer and optical band gap possessed by the photosensitive layer on which the surface layer is disposed are matched at their interface. The light receiving member can effectively prevent the occurrence of interference fringes in the formed images, forming visible images of excellent quality even when coherent laser beams are used as the light source.

Abstract: Since a barrier layer of an electrophotographic photosensitive member interposed between a photoconductive layer and conductive substrate is formed of a first BN layer of high resistivity laminated with a second .mu.c-Si layer having a rectifying function, the charging capacity is elevated and the residual potential is reduced. A photoconductive layer prepared from a-Si has a high sensitivity to light rays having a broad range of wavelengths. A surface layer prepared from .mu.c-Si containing nitrogen N, carbon C or oxygen O has a high charge-retaining capability.

Abstract: An imaging member comprised of a supporting substrate, a barrier layer of hydrogenated amorphous silicon nitride with dopants, a hydrogenated amorphous silicon photoconducting layer, and in contact therewith a top overcoating layer of nonstoichiometric silicon nitride.

Abstract: An electrographic photoreceptor comprising a support, an intrinsic silicon photosensitive layer and a surface layer of amophous silicon. To the surface layer is added either hydrogen, germanium, tin or lead in order to use the dangling bonds of the amorphous carbon.

Abstract: An image-forming process using a long rolled transparent light-sensitive recording material is disclosed. The process comprises applying at least two image-forming steps each including at least an image exposure and a development to a long rolled transparent light-sensitive recording material comprising a support having thereon a light-sensitive layer and a surface protective layer containing a hardenable compound and fine particles. The recording material preferably has a backing layer containing fine particles.

Abstract: There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a charge injection inhibition layer, a photoconductive layer and a surface layer, the charge injection inhibition layer being formed of an amorphous material containing silicon atoms as the main constituent atoms and an element for controlling the conductivity, the photoconductive layer being formed of an amorphous material containing silicon atoms as the main constituent atoms and at least one kind selected from hydrogen atoms and halogen atoms and the surface layer being formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, and the amount of the hydrogen atoms contained in the surface layer being in the range from 41 to 70 atomic %.

Abstract: The invention disclosed relates to a photosensitive member with an amorphous silicon photoconductive layer. On the photoconductive layer, an insulating layer including amorphous silicon, carbon and oxygen is formed. The amount of carbon is 5 to 65 atomic % and less than 10 atomic % for oxygen if both carbon and oxygen are included uniformly throughout the layer. An amorphous silicon barrier layer containing either oxygen and boron or oxygen and carbon may be formed between the substrate and the photoconductive layer.

Abstract: An electrostatographic imaging member comprised of a supporting substrate; a hydrogenated amorphous silicon photogenerator layer; and in contact therewith a plasma deposited charge transporting layer with components therein selected from the group consisting of silicon nitrides, boron nitrides, aluminum nitrides, phosphorous nitrides, gallium nitrides, boron phosphides, aluminum phosphides, boron oxides, aluminum oxides, gallium oxides, and organosilanes; and wherein the transporting layer contains therein hydrogen, halides, or mixtures thereof.

Abstract: An improved enhancement layer operatively disposed between the top protective layer and the photoconductive layer of an electrophotographic device. The enhancement layer is specifically tailored from a semiconductor alloy material designed to substantially prevent charge carriers from being caught in deep midgap traps as said carriers move toward the surface of the electrophotographic device from the photoconductive layer thereof.

Abstract: A process for making photoconductive semiconductor alloys and members with high reaction gas conversion efficiencies and at high deposition rates utilizes microwave energy to form a deposition plasma. The high deposition rates and high gas conversion efficiencies allow photoconductive members to be formed of amorphous semiconductor alloys at commercially viable rates.The process includes coupling microwave energy into a substantially enclosed reaction vessel containing a substrate and depositing amorphous photoconductive alloys onto the substrate from a reaction gas introduced into the vessel. The photoconductive member includes a bottom blocking layer, a photoconductive layer and a top blocking layer. The photoconductive member can be formed in a negative or positive charge type configuration. The members can include a top blocking enhancement layer and/or an improved infrared photoresponsive layer.

Abstract: A blocking layer is formed of amorphous silicon carbide (a-Si:C) or amorphous silicon nitride (a-Si:N) on a conductive substrate. A first photoconductive layer formed of a-Si:C or a-Si:N on the blocking layer contains 1.times.10.sup.-6 to 1.times.10.sup.-3 atomic % of a Group III or V element in the Periodic Table. A second photoconductive layer formed of on the first photoconductive layer contains 1.times.10.sup.-6 to 1.times.10.sup.-3 atomic % of a Group III or V element. The second photoconductive layer has a thickness of 0.1 to 5 .mu.m. With this multilayer structure, a photosensitive member having high charging and potential holding properties can be obtained.

Abstract: An image holding member has a surface layer containing a silicone type comb shaped graft polymer having a silicone portion at the side chain.

Abstract: An improved enhancement layer operatively disposed between the top protective layer and the photoconductive layer of an electrophotographic device. The enhancement layer is specifically tailored from a semiconductor alloy material designed to substantially prevent charge carriers from being caught in deep midgap traps as said carriers move toward the surface of the electrophotographic device from the photoconductive layer thereof. A method of substantially improving charge fatigue and image flow characteristics through the use of such an improved enhancement layer is also disclosed.

Abstract: The photosensitive member is constituted by a supporting member made of pure aluminum coated with a porous amorphous aluminum oxide anhydride layer, a photoconductive layer formed on the supporting member and comprises a hydrogenated amorphous silicon layer, an intermediate layer laminated on the photoconductive layer and consists of amorphous silicon nitride or amorphous silicon carbide and a surface layer laminated on the intermediate layerand consists of hydrogen containing amorphous boron nitride.

Abstract: An image holding member which contains a photosensitive layer of photoconductive material and an amorphous film overlayer containing at least silicon atoms, hydrogen atoms and carbon atoms as main components, wherein the amorphous film is formed by discharge in a gaseous atmosphere of organohydrogenosilane is disclosed.

Abstract: A photoconductive device including a conductive substrate, a photoconductive layer of amorphous silicon containing at least hydrogen and a surface protection layer applied on the photoconductive layer a dopant is added in the photoconductive layer at least near the interface with the surface protection layer, and the concentration of the dopant increases in the direction perpendicular to the interface. The surface protection layer has an optical energy gap larger than that of the photoconductive layer.A further photoconductive device comprising a conductive substrate; a photoconductive layer of amorphous silicon applied on the conductive substrate and a surface protection layer of amorphous silicon applied on said photoconductive layer wherein the surface protection layer contains oxygen, and is doped with a IIIb element.

Abstract: An electrophotographic photosensitive member comprising a photoconductive layer formed over a substrate and a surface layer formed over the photoconductive layer and having a high photosensitivity and charge retaining ability at the surface layer, the photoconductive layer and the surface layer being composed chiefly of amorphous silicon, the surface layer being a layer containing carbon forming an insulating material as combined with the amorphous silicon, and the content of the carbon based on the silicon atoms being low toward the substrate and high toward the surface of the surface layer; which is usable for copying machines and intelligent copying machines.

Abstract: The disclosed light-sensitive recording material is composed of an electrically conductive support, suitable for the production of printing forms or printed circuits, and a photoconductive layer system containing a photoconductor, a binder, a sensitizing dye and conventional additives. The photoconductive system comprises (A) a single photoconductive layer, or multiple layers, applied to the support and (B) a light-sensitive covering layer which contains at least one photochemically reactive compound. The use of the recording material in a process for the production of printing forms and printed circuits is also disclosed.

Abstract: Electrophotographic light-sensitive elements according to the invention comprise(a) a conductive support;(b) a photoconductive layer; and(c) a surface protective layer.The conductive support is formed in a sheet-like or cylindrical shape from any suitable conductive material, and acts as an electrode of the light-sensitive element as well as acting as a physical support. The photoconductive layer comprises amorphous hydrogenated silicon having a high absorption efficiency and photoconductivity. The a--Si:H of a photoconductive layer may contain other elements such as fluorine, carbon, nitrogen and germanium, and may be doped with elements belonging to groups III and V of the periodic table. The surface protective layer is the outermost layer of an electrophotographic light-sensitive element according to the invention, and imparts resistance to environmental conditions. The surface protective layer comprises hydrogenated amorphous carbon, and may additionally contain silicon, nitrogen, oxygen or fluorine.

Abstract: The invention relates to improvements in an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon produced by glow discharge decomposition or sputtering. An electrophotographic sensitive member is formed by laminating an amorphous silicon barrier layer and an amorphous photoconductive layer successively on an electrically conductive substrate, the first mentioned layer containing an impurity of Group IIIa of Periodic Table of Elements, or nitrogen and impurity of Group IIIa of same Table, and also containing oxygen within a range of 0.1 to 20.0 atomic % at the point of the layer and in a progressively decreasing pattern throughout the rest thereof. Constructed as such, the photosensitive member has an increased photosensitivity to near-infrared beams, a large charge-holding capability, and low-rate dark attenuation characteristics. In addition, it is less expensive to manufacture.

Abstract: An image-forming member for electrophotography comprises a photoconductive layer including as constituting layers, a hydrogenated amorphous silicon layer and an amorphous inorganic semiconductor layer. The amorphous inorganic semiconductor layer is laminated on the hydrogenated amorphous silicon layer to thereby provide a heterojunction.

Abstract: A photoreceptor comprising a support bearing thereon a charge transport layer comprising one selected from the group consisting of a--SiC:H, a--SiC:F and a--SiC:H:F, a charge generating layer comprising one selected from the group consisting of a--SiH, a--SiF and a SiH:F, an a--Si type surface modifying layer containing one selected from the group consisting of N, O and C, and an a--Si type interlayer containing at least one selected from the group consisting of N, O and C, the content of said at least one of N, O and C in said interlayer being less than in said surface modifying layer, said interlayer being interposed between said charge generating layer and said surface modifying layer.

Abstract: A light-receiving member comprises a substrate for light-receiving member and a light-receiving layer having photoconductivity provided on said substrate, said light-receiving layer comprising from the side of said substrate a first layer (I) comprising an amorphous material containing silicon atoms, a second layer (II) comprising an amorphous material containing silicon atoms and germanium atoms and a third layer (III) comprising an amorphous material containing silicon atoms and nitrogen atoms, and the germanium atoms contained in said second layer (II) being distributed ununiformly in the layer thickness direction of said layer.

Abstract: The invention relates to improvements in an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon produced by glow discharge decomposition or sputtering. An electrophotographic sensitive member is formed by laminating an amorphous silicon barrier layer and an amorphous photoconductive layer successively on an electrically conductive substrate, the first mentioned layer containing an impurity of Group IIIa of Periodic Table of Elements, or nitrogen and impurity of Group IIIa of same Table, and also containing oxygen within a range of 0.1 to 20.0 atomic % at the point of the layer and in a progressively decreasing pattern throughout the rest thereof. Constructed as such, the photosensitive member has an increased photosensitivity to near-infrared beams, a large charge-holding capability, and low-rate dark attenuation characteristics. In addition, it is less expensive to manufacture.

Abstract: An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A method of making an electrophotographic member with an a-Si photoconductive layer and an a-c layer as a surface protecting layer is disclosed, wherein the a-c layer is deposited on the photoconductive layer; which a-c layer contains hydrogen or hydrogen and fluorine, and which layer is formed by a glow discharge method.

Abstract: An electrophotographic photosensitive member comprises a conductive substrate, a charge transport layer and a charge generation layer, wherein said charge generation layer is superposed on said charge transport layer, and said charge generation layer contains particles of a fluorine-containing resin. And, an image forming process comprising the repetition of an electrophotographic process uses said electrophotographic photosensitive member.

Abstract: An image holding member having on its surface an insulating layer consisting principally of a hardenable resin, a lubricant, and polyvinyl butyral. The image holding member exhibits an excellent surface lubricating property, and hence durability and cleaning properties.

Abstract: A photosensitive member which comprises a photoconductive layer and an insulating layer located on the photoconductive layer, the photoconductive layer including amorphous silicon and the insulating layer including amorphous silicon, carbon, oxygen and fluorine. The photoconductive layer has a higher resistivity than the photosensitive member. A barrier layer may be located beneath the photoconductive layer, the barrier layer including either amorphous silicon, oxygen and a Group III impurity or amorphous silicon, carbon and oxygen.

Abstract: An electrophotographic photosensitive member has a photosensitive layer in which the surface hardness of the photosensitive layer is 10 g. or more which is a vertical load necessary for forming a scratch of 50 .mu.m wide when the vertical load is applied to a diamond or supphire cone pressing member, the conical angle being 90.degree. and the tip being a semispheric shape having a diameter of 0.01 mm and the cone pressing member is moved on the surface of the photosensitive layer at the speed of 50 mm/min.

Abstract: A photoconductive device comprising a conductive substrate and a photoconductive layer applied on the conductive substrate, which photoconductive layer is made of amorphous silicon containing at least hydrogen, wherein the photoconductive layer contains hydroxy radicals.Another photoconductive device comprising a conductive substrate, a photoconductive layer of amorphous silicon containing at least hydrogen and a surface protection layer applied on the photoconductive layer; wherein a dopant is added in the photoconductive layer at least near the interface with the surface protection layer, and the concentration of the dopant increases in the direction perpendicular to the interface and the surface protection layer has an optical energy gap larger than that of the photoconductive layer.

Abstract: An electrophotographic photosensitive member comprising a photoconductive layer formed over a substrate and a surface layer formed over the photoconductive layer and having a high photoconductivity and charge retaining ability at the surface layer, in which the photoconductive layer and the surface layer being composed chiefly of amorphous silicon, the surface layer being a layer containing a substance forming an insulating material as combined with the amorphous silicon, and the content of the substance based on the silicon atoms being low toward the substrate and high toward the surface of the surface layer; which is usable for copying machines and intelligent copying machines.

Abstract: The invention disclosed relates to a method of forming composite images. A photosensitive member including an electroconductive base, a photoconductive layer and an insulation layer in a superposed arrangement is used and to this photosensitive member, a negative image is exposed while simultaneously charging, irradiating with light, charging by an a.c. corona charging means and then exposing a positive image to form a composite electrostatic latent image. If the positive image overlaps with the negative image, the positive image is formed in preference.