Abstract: A composition comprises a solvent, and an electroconductive substance and an amphiphilic block copolymers having a polyalkenyl ether repeating-unit structure, or a block copolymer enclosing an electroconductive substance. A black ink composition comprises a fine particulate metal having an average particle diameter of not more than 20 nm, an amphiphilic block copolymer, and a solvent. A method for forming an electroconductive pattern by applying the composition. A method for forming an electroconductive pattern by applying a composition comprises a block copolymer enclosing an electroconductive substance, system to form an electroconductive pattern on the substrate.

Abstract: The present invention relates to new polymers that contain repeat units of phenol and photoacid-labile esters that contain an alicyclic group, preferably a bulky group that suitably may contain 7 to about 20 carbons, such as an alkyladamantyl, ethylfencyl, tricyclo decanyl, or pinanyl group. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.

Abstract: A resist composition comprises (A) at least two kinds of resins each of which decomposes by the action of an acid to undergo an increase in its solubility for an alkali developer, wherein at least one kind of the resins (A) is a resin synthesized by living radical polymerization using a chain transfer agent represented by formula (I): wherein: A represents an organic group not containing hetero atoms; and Y represents an organic group capable of releasing a radical.

Abstract: A photosensitive film excellent in workability and making it possible, in a normal pressure laminating process, to laminate photosensitive films on the surface of substrate having a metallic surface with a reduced number of air voids generated and in a high product yield, said film comprising a support film (A), a photosensitive resin composition-containing photosensitive resin layer (B) formed on said support (A) and a protecting film (C) further stuck on said layer (B), wherein the number of fish eyes having a diameter of at least 80 ?m included in the protecting film (C) does not exceed 5 fish eyes/m2.

Abstract: A positive resist composition comprises: (A) a resin that contains a repeating unit (A1) having a lactone structure and a cyano group, and increases its solubility to an alkali developer by action of an acid; (B) a compound that generates an acid by irradiation with actinic ray or radiation; and (C) a solvent.

Abstract: A compound represented by general formula (I); and a compound represented by general formula (b1-1). [Chemical Formula 1] X-Q1-Y1—SO3?M+??(I) X-Q1-Y1—SO3?A+??(b1-1) wherein Q1 represents a divalent linkage group or a single bond; Y1 represents an alkylene group which may have a substituent or a fluorinated alkylene group which may have a substituent; X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent, and has an —SO2— bond in the structure thereof; M+ represents an alkali metal ion; and A+ represents an organic cation.

Abstract: A multilayer resist process comprises forming in sequence an undercoat film, an intermediate film, and a photoresist film on a patternable substrate, and effecting etching in multiple stages. A silicon-containing film forming composition is useful in forming the intermediate film serving as an etching mask, comprising a silicon-containing polymer obtained through hydrolytic condensation of at least one Si—Si bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic materials.

Abstract: A method for the formation of a patterned resist layer on a substrate surface by patternwise irradiation with actinic radiation. The first step of the method is formation of a coating layer comprising a substituted triphenylene compound having a diameter of between 1 and 3 nm, a sensitizer which increases the sensitivity of the exposed layer to the actinic radiation used in a subsequent irradiation step and a cross-linker on the substrate surface. Subsequently the coating layer is irradiated patternwise, and unirradiated areas of the coating layer are removed. A resist material comprising a solution of: (i) as the principal resist material a triphenylene derivative having a diameter of from 1 to 3 rim, (ii) a sensitizer which increases the sensitivity of the resist material to actinic radiation, and (iii) a cross-linker capable of cross-linking molecules of the triphenyl derivative, the cross-linker optionally being constituted by a moiety attached to the triphenylene derivative.

Abstract: A positive photosensitive composition comprises: (A) 5 to 20 parts by weight of the total amount of at least one compound that generates an acid upon irradiation with an actinic ray; and (B) 100 parts by weight of the total amount of at least one fluorine atom-containing resin having a group that increases a solubility of the resin in an alkaline developer by the action of an acid.

Abstract: There is disclosed a resist top coat composition, comprising at least a polymer that has an amino group or a sulfonamide group at a polymer end and that is represented by the following general formula (1); and a patterning process comprising: at least, a step of forming a photoresist film on a substrate; a step of forming a resist top coat on the photoresist film by using the resist top coat composition; a step of exposing the substrate; and a step of developing the substrate with a developer. There can be provided a resist top coat composition that makes it possible to provide more certainly rectangular and excellent resist patterns when a top coat is formed on a photoresist film; and a patterning process using such a composition.

Abstract: A positive photosensitive composition comprises (A) a resin that has an acid decomposable repeating unit represented by formula (I) and increases its solubility in an alkali developer by action of an acid; (B) a compound generating an acid in irradiation with actinic light or radiation; (C) a resin that contains neither fluorine nor silicon and has a repeating unit having the predetermined structure; and (D) a solvent, wherein each symbol represents a predetermined group.

Abstract: An image forming medium includes a substrate, and an imaging layer coated on or impregnated into the substrate, wherein the imaging layer includes a photochromic polymer, optionally dispersed in a polymeric binder or a phase change binder, the photochromic polymer including a polymer having at least one photochromic unit grafted therein, wherein the imaging layer exhibits a reversible transition between a colorless state and a colored state in response to heat and light and wherein the imaging layer does not exhibit a transition from the colored state to colorless state when heated in the absence of light.

Abstract: A positive resist composition including a resin component (A) containing an acid dissociable dissolution inhibiting group whose alkali solubility increases under action of acid and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer comprising a first structural unit (a1) derived from a hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester containing an alcoholic hydroxyl group, in which 10 mol % or more and 25 mol % or less of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with the acid dissociable dissolution inhibiting groups, and a weight average molecular weight of the copolymer prior to protection with the acid dissociable dissolution inhibiting groups is 2,000 or more and 8,500 or less.

Abstract: The present invention provides a resist pattern thickening material which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a phase transfer catalyst. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Abstract: An image forming medium includes a substrate and an imaging layer coated on or impregnated into a substrate, where the imaging layer is formed of an imaging composition that includes a solvent or a polymeric binder, and a photochromic material selected from substituted fulgides and substituted dithienylethenes, dissolved or dispersed in the solvent or polymeric binder, and where the imaging composition exhibits a reversible homogeneous-heterogeneous transition between a colorless state, an intermediate colorless or colored erasable state, and a final colored stable state, the photochromic material converting from the colorless state to the colored stable state upon irradiation with light of a first wavelength and converting from the colored stable state to the colorless state upon exposure to heat and light.

Abstract: It is a main object of the present invention to provide a wettability variable substrate provided with a wettability variable layer which is free from any cloud and is superior in adhesion to a substrate, transparency and liquid repellency.

Abstract: There is disclosed a negative resist composition comprising, at least, a polymer comprising a repeating unit of hydroxy vinylnaphthalene represented by the following general formula (1). There can be provided a negative resist composition, in particular, a chemically amplified negative resist composition that can exhibit higher resolution than conventional hydroxy styrene or novolac negative resist compositions, that provides excellent pattern profiles after being exposed and that exhibits excellent etching resistance; and a patterning process that uses the resist composition.

Abstract: Provided is an article that comprises a substrate comprising an acid-etchable layer, a water-soluble polymer matrix, and a photoacid generator. Also provided is a method for patterning that can provide patterned layers that can be used to form electroactive devices.

Abstract: A positive photoresist composition comprises a radiation sensitive acid generator, and a polymer that includes a first repeating unit derived from a sulfonamide monomer including a fluorosulfonamide functionality, a second repeating unit having a pendant acid-labile moiety, and a third repeating unit having a lactone functionality. The positive photoresist composition may be used to form patterned features on a substrate, such as those used in the manufacture of a semiconductor device.

Abstract: A positive resist composition that includes a base material component (A) that contains an acid-dissociable, dissolution-inhibiting group and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base material component (A) contains a compound (A1), in which either a portion of, or all of, the hydrogen atoms of phenolic hydroxyl groups within a polyhydric phenol compound with a molecular weight of 300 to 2,500 represented by a general formula (I) shown below have been substituted with at least one group selected from the group consisting of acid-dissociable, dissolution-inhibiting groups represented by a general formula (II) shown below and acid-dissociable, dissolution-inhibiting groups represented by a general formula (III) shown below.

Abstract: A photosensitive film excellent in workability and making it possible, in a normal pressure laminating process, to laminate photosensitive films on the surface of substrate having a metallic surface with a reduced number of air voids generated and in a high product yield, said film comprising a support film (A), a photosensitive resin composition-containing photosensitive resin layer (B) formed on said support (A) and a protecting film (C) further stuck on said layer (B), wherein the number of fish eyes having a diameter of at least 80 ?m included in the protecting film (C) does not exceed 5 fish eyes/m2.

Abstract: The present invention is to obtain without any trouble a photosensitive resin composition, a photosensitive layer and a photosensitive resin printing original plate, which are developable with an aqueous developer, resistant to an aqueous ink and a cosolvent ink, and assured of good image reproducibility. The present invention relates to a photosensitive resin composition comprising (A) hydrophobic polymers obtained from at least two or more water dispersion latexes, (B) a photopolymerizable compound and (C) a photopolymerization initiator, wherein the two or more hydrophobic polymers each is present in a fine particle state.

Abstract: A positive photoresist composition comprises a radiation sensitive acid generator, and a polymer that includes a first repeating unit derived from a sulfonamide monomer including a fluorosulfonamide functionality, a second repeating unit having a pendant acid-labile moiety, and a third repeating unit having a lactone functionality. The positive photoresist composition may be used to form patterned features on a substrate, such as those used in the manufacture of a semiconductor device.

Abstract: A positive resist composition that includes a resin component (A) and an acid generator component (B), wherein the component (A) includes a polymer compound (A1) having a structural unit (a0) represented by a general formula (a0) shown below, and a structural unit (a1), which is derived from an (?-lower alkyl) acrylate ester containing an acid-dissociable, dissolution-inhibiting group and is not classified as the structural unit (a0): (wherein, R represents a hydrogen atom or a lower alkyl group; Y1 represents an aliphatic cyclic group; Z represents an alkoxyalkyl group; a represents an integer from 1 to 3, and b represents either 0 or an integer from 1 to 2, provided that a+b=1 to 3).

Abstract: Silicon compounds having fluorinated hemiacetal structure are provided. Silicone resins having the same structure have an appropriate acidity to enable formation of a finer pattern by minimizing the pattern collapse by swelling, exhibit improved resistance to the etching used in the pattern transfer to an organic film, and are thus suited for use in resist compositions for the bilayer process.

Abstract: A photoresist composition, e.g., a positive acting resist, for use in the formation of circuit patterns and the like on printed circuit boards and the like circuitized substrates, the photoresist composition including a quantity of silver therein in a sufficient amount to substantially prevent bacteria formation within said composition. A method of making the composition is also provided.

Abstract: A positive resist composition comprising: a resin which increases solubility in an alkali developing solution by an action of an acid and comprises a repeating unit containing a lactone structure and a cyano group, a repeating unit containing a first group selected from groups represented by the formulae (pI) to (pV) as defined herein and a repeating unit containing a second group selected from groups represented by the formulae (pI) to (pV) as defined herein which is different from the first group; a compound which generates an acid upon irradiation of an actinic ray or a radiation; and a solvent.

Abstract: A positive resist composition that includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer (A1) containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, in which a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) have been protected with the acid dissociable, dissolution inhibiting groups; and either the acid generator component (B) includes a diazomethane-based acid generator and an onium salt-based acid generator; or the composition further contains a compound, which contains at least one acid dissociable, dissolution inhibiting group, and generates an organic carboxylic acid under the action of acid g

Abstract: A positive photosensitive composition comprises: a polymer compound having an acid-decomposable structure on a terminal of the polymer compound; and a compound capable of generating an acid upon irradiation with actinic ray or radiation.

Abstract: This invention pertains to a silsesquioxane resin with improved lithographic properties (such as etch-resistance, transparency, resolution, sensitivity, focus latitude, line edge roughness, and adhesion) suitable as a photoresist; a method for in-corporating the fluorinated or non-fluorinated functional groups onto silsesquioxane backbone. The silsesquioxane resins of this invention has the general structure (HSiO3/2)a(RSiO3/2)b wherein; R is an acid dissociable group, a has a value of 0.2 to 0.9 and b has a value of 0.1 to 0.8 and 0.9?a+b?1.0.

Abstract: A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents an aryl group; Rn represents an alkyl group, a cycloalkyl group or an aryl group; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.

Abstract: Mixtures of an alkyl vinyl ether/maleic anhydride copolymer or an alkylethylene/maleic anhydride copolymer with cellulose acetate provide protective overcoats for thermally developable materials. These protective overcoats exhibit good adhesion to the emulsion layer, are physically hard, and have good optical clarity while maintaining the sensitometric properties of the materials.

Abstract: A molecular resist composition and method of use is disclosed wherein the composition includes no silicon containing material, no polymeric material, and a substituted oligosaccharide, wherein the substituted oligosaccharide is substituted with at least one acid-cleavable —OR group, wherein the substituted oligosaccharide has 2 to 10 monosaccharides, wherein the molecular resist may be initially insoluble in developer, which may be an aqueous alkaline solution or developer consisting essentially of water. In some embodiments, the molecular resist may become soluble in the developer consisting essentially of water upon exposure to radiation having a wavelength of 193 nm or less and a post-exposure bake temperature from about room temperature to about 110° C. The resist material of the present invention may be used to print feature sizes wherein developed images may have a line/spacing not greater than than 120 nm when the developer consists essentially of water or an aqueous alkaline solution.

Abstract: The present invention is a photosensitive element including a support and a photosensitive resin composition layer composed of a photosensitive resin composition containing (A) a binder polymer, (B) a photopolymerizable compound, and (C) a photopolymerization initiator, wherein, the photosensitive resin composition contains a thioxanthone-based compound represented by the following general formula (I) as the component (C), and when the parts by weight of the thioxanthone-based compound relative to 100 parts by weight for the total weight of the component (A) and the component (B) is taken to be P, and the film thickness of the photosensitive resin composition layer is taken to be Q (?m), then R, which is the product of P and Q, satisfies the condition of the following formula (1). In the following general formula (I), R1to R8 represent a hydrogen atom, halogen atom or hydrocarbon group. 25.5?R?79.

Abstract: A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units. The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution, and forms a pattern with a minimal line edge roughness.

Abstract: A hydroxystyrene/indene/alkoxyisobutoxystyrene copolymer having Mw of 1,000-500,000 is formulated as a base resin to give a resist composition, typically chemically amplified positive resist composition. The composition exhibits a high resolution, a satisfactory resist pattern profile after development, and improved etch resistance and is thus suitable as a micropatterning material for the fabrication of VLSI.

Abstract: A photosensitive compound has two or more structural units, in a molecule, represented by the following general formula (1): wherein R1 to R5 are selected from the group consisting of hydrogen atom, halogen atom, alkyl group, alkoxy group, acetoxy group, phenyl group, naphthyl group, and alkyl group in which a part or all of hydrogen atoms are substituted with fluorine atom; and X is a substituted or unsubstituted phenylene group or a substituted or unsubstituted naphthylene group.

Abstract: A positive resist composition comprises: (A) a resin capable of increasing its solubility in an alkali developer by action of an acid and not containing a silicon atom; (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, (C) a silicon atom-containing resin having at least one group selected from groups (X) to (Z), (X) an alkali-soluble group, (Y) a group capable of decomposing by action of an alkali developer to increase the solubility of resin (C) in an alkali developer, (Z) a group capable of decomposing by action of an acid to increase the solubility of resin (C) in an alkali developer; and (D) a solvent.

Abstract: The present invention relates to a new photosensitive resin composition capable of solubility control and a pattern formation method of a double-layer structure using the same, and more particularly to a photosensitive resin composition that can control the -value using a new photopolymerization initiator and lower layer hardener and that can control a film thickness according to the exposure energy without pattern breakup, even with low exposure energy. This photosensitive resin composition is useful for color filters and overcoating materials of LCD (liquid crystal display) manufacturing processes.

Abstract: The present invention provides a salt represented by the formula (I): wherein Q1 and Q2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, T represents a methylene group or a carbonyl group, R represents an adamantyl group substituted with at least one selected from the group consisting of a C1-C4 alkyl group, a C1-C4 alkoxy group, a hydroxyl group, a hydroxymethyl group, a cyano group and an oxo group, and A+ represents an organic counter ion. The present invention further provides a chemically amplified resist composition comprising the salt represented by the above-mentioned formula (I).

Abstract: A photosensitive resin composition comprising (A) a binder polymer, (B) a photopolymerizing compound with an ethylenic unsaturated bond, (C) a photopolymerization initiator and (D) a compound represented by the following general formula (1) or (2). [Chemical Formula 1] [wherein X1, X2, X3, X4, X5 and X6 each independently represent a CH group, CCH3 group, CC2H5 group or nitrogen, Y1, Y2, Y3 and Y4 each independently represent optionally substituted aryl, and Y5 represents optionally substituted arylene].

Abstract: The present invention provides a resist composition which enables uniformly thickening a resist pattern with a resist pattern thickening material, regardless of the direction, spacing variations of the resist pattern, and the components of the resist pattern thickening material and enables forming a fine space pattern of resist, exceeding exposure limits of light sources of exposure devices at low cost, easily, and efficiently. The resist composition contains an alicyclic compound (melting point: 90° C. to 150° C.), and a resin. The method for manufacturing a semiconductor device includes forming a resist pattern on a surface of a workpiece to be processed by using a resist composition and applying a resist pattern thickening material on the surface of the workpiece so as to cover the surface of the resist pattern to thicken the resist pattern; and patterning the surface of the workpiece by etching thereof using the thickened resist pattern as a mask.

Abstract: Novel aromatic sulfonium salt compounds of general formula (I), photo-acid generators comprising the same, and photo-polymerizable compositions containing the same, capable of providing stereolithographic resin compositions which do not suffer from the hindrance to curing by oxygen, can easily give shaped articles having desired sizes by virtue of the high accuracy thereof in curing, can attain a satisfactory curing depth owing to the high sensitivity thereof for radiant energy and can be employed for wide usage, such as photoresist and ink for foods-packing medium, since the release of benzene is suppressed; and a stereolithographic process, using said stereolithographic resin composition.

Abstract: A photoresist composition encompassing a polymer having at least one polycyclic olefin repeat unit having a desired exo mole percent is provided, where the repeat unit is derived from a polycyclic olefin monomer having the desired exo mole percent. Such polymers having such repeat units having a desired exo mole percent offer control of differential dissolution rate and hence provide enhanced imaging properties. Exemplary monomers having a desired exo mole percent are also provided.

Abstract: The present invention can provide a resist cover film-forming material which is suitably used for a resist cover film for liquid immersion exposure and can transmit ArF excimer laser lights and provide a process for forming a resist pattern using the resist cover film-forming material. The resist cover film-forming material contains a resin having an alicyclic skeleton at any of the main chain and the side chains; it is nonphotosensitive and is used in forming a resist cover film that covers a resist film during liquid immersion exposure. The process for forming of a resist pattern includes forming a resist film on a surface of a workpiece to be processed, forming a resist cover film on the resist film using the resist cover film-forming material of the present invention, irradiating the resist film with exposure light through the resist cover film by liquid immersion exposure, and developing the resist film.

Abstract: Novel photoresist materials, which can be photolithographically processed in biocompatible conditions are presented in this invention. Suitable lithographic scheme for the use of these and analogous resists for biomolecule layer patterning on solid substrates are also described. The processes described enable micropatterning of more than two different proteins on solid substrates without denaturation of the proteins. The preferred resist materials are based on (meth)acrylate copolymers that contain at least one acid cleavable ester group and at least one hydrophilic group such as an alcoholic or a carboxylic group.

Abstract: The photoresist monomer including an oxime group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula. In Formula, R* is independently a hydrogen or a methyl group, and R is a substituted or unsubstituted C1˜C25 alkyl group with or without an ether group, or a substituted or unsubstituted C4˜C25 hydrocarbon group including an aryl group, a heteroaryl group, a cycloalkyl group or a multicycloalkyl group with or without an ether group, a ketone group or a sulfur.

Abstract: A compound represented by general formula (I) shown below; and a polymeric compound having a structural unit (a0) represented by general formula (a0-1) shown below: wherein R1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; A represents a divalent hydrocarbon group of 2 or more carbon atoms which may have a substituent; B represents a divalent hydrocarbon group of 1 or more carbon atoms which may have a substituent; and R2 represents an acid dissociable, dissolution inhibiting group.

Abstract: The present invention relates to a negative photoresist composition comprising, a) at least one alkali-soluble polymer, where the polymer comprises at least one unit of structure 1, where, R? is selected independently from hydrogen, (C1-C4)alkyl, chlorine, bromine and m is an integer from 1 to 4; b) at least one monomer of structure 1, where, W is a multivalent linking group, R1 to R6 are independently selected from hydrogen, hydroxyl, (C1-C20) alkyl and chlorine, X1 and X2 are independently oxygen or N—R7, where R7 is hydrogen or (C1-C20) alkyl, and n is and integer equal to or greater than 1, and c) at least one photoinitiator. The invention also relates to a process for imaging the negative photoresist composition.

Abstract: New polymers and new anti-reflective compositions containing such polymers are provided. The compositions comprise a polymer (e.g., epoxy cresol novolac resins) bonded with a chromophore (4-hydroxybenzoic acid, trimellitic anhydride). The inventive compositions can be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.