Abstract: There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.

Abstract: A pattern forming method which uses a positive resist composition comprises: (A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a silicon-containing resin having at least one group selected from the group of consisting (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating, (ii) a step of exposing the resist coating to light via an immersion liquid, (iii) a step of removing the immersion liquid remaining on the resist coating, (iv) a step of heating the resist coating, a

Abstract: Disclosed herein is a photoresist composition which includes a norbornene copolymer having an epoxy group, an acid generator, and an organic solvent. The norbornene polymer shows superior mechanical and thermal properties, high transparency, excellent insulating properties, and particularly, improved mechanical properties due to the presence of an epoxy group. The photosensitive resin composition shows superior performance, e.g., transparence, developing properties, residual film characteristics, chemical resistance, heat resistance, and flatness. Particularly, since the photosensitive resin composition enables easy formation of a pattern as an interlayer insulating film and shows a high light transmittance even when being formed into a thin film with a relatively large thickness, it is suitable for the production of an interlayer insulating film used in the fabrication processes of LCDs.

Abstract: A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure.

Abstract: The invention relates to new polymers that comprise units that contain one or more photoacid generator groups and photoresists that contain the polymers. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-250 nm or sub-200 nm, particularly 248 nm and 193 nm.

Abstract: Record material imageable with a laser beam. The material is a substrate such as paper or polyolefin film having provided on at least one surface thereof a coating containing a solvent-soluble or disperse-type dye suitable for coloring plastics or polymers. Typical solvent-soluble and disperse-type dye include monoazo dyes, diazo dyes, anthraquinone dyes, coumarin dyes, quinoline dyes, xanthene dyes, and naphthalimide dyes. The record material does not show visible dye specks in the coating layer on the substrate because the dye has a very small average particle size—less than 50 microns. No more than 1% of the dye particles are larger than 100 microns. Also, method for imaging a substrate using heat energy by applying heat energy to the described record material to bring about a temperature in the coating greater than the melting temperature of the dye, causing color to become visible in the record material.

Abstract: A method of selectively removing a sacrificial material on a substrate is described. The method comprises forming a sacrificial layer on a substrate. Thereafter, the sacrificial layer is selectively decomposed at a temperature less than the temperature required to thermally decompose the sacrificial layer by selectively exposing the sacrificial layer to UV radiation.

Abstract: Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 ?m?1 at 193 nm and a relatively high refractive index are provided. The functionalized polycarbosilanes contain at least one pendant group that is acid labile or aqueous base soluble. Also disclosed are photoresists formulations containing the functionalized polycarbosilanes that are suitable for use in lithography, e.g., immersion lithography.

Abstract: The invention provides various ionic and non-ionic photoacid generator compounds. Photoresist compositions that include the novel ionic and non-ionic photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

Abstract: A photosensitive composition contains: a compound capable of generating an acid upon irradiation with actinic rays or radiation; a basic compound represented by the formula (I-a) as defined herein; a basic compound represented by the formula (I-b) as defined herein; and a surfactant represented by the formula (II) as defined herein.

Abstract: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C.

Abstract: A coating composition for forming a heat-sensitive transfer image-receiving sheet provided with at least one receptor layer on a support, wherein the composition comprises a latex polymer containing a repeating unit derived from a monomer represented by formula (1); and a heat-sensitive transfer image-receiving sheet prepared by using the coating composition: wherein, R1 represents a hydrogen atom, a halogen atom or a methyl group; L1 represents a divalent linking group; R2 represents an alkylene group having 1 to 5 carbon atoms which may be further substituted; n represents an integer of 1 to 40; Z1 represents a hydrogen atom, an alkyl group having 1 to 30 carbon atoms, a cycloalkyl group, or an aryl group; and when n is 2 or more, R2s may be the same or different.

Abstract: Embodiments in accordance with the present invention provide waveguide structures and methods of forming such structures where core and laterally adjacent cladding regions are defined. Some embodiments of the present invention provide waveguide structures where core regions are collectively surrounded by laterally adjacent cladding regions and cladding layers and methods of forming such structures.

Abstract: A positive resist composition for producing MEMS using an electron beam, the composition comprising a resin component (A) that displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon irradiation, wherein the resin component (A) is a resin prepared by protecting a portion of all the hydroxyl groups within an alkali-soluble novolak resin with acid-dissociable, dissolution-inhibiting groups.

Abstract: Resist compositions comprising a hydrogenated ring-opening metathesis polymer bearing an alicyclic structure in its backbone and comprising structural units having an oxygen atom incorporated as part of the cyclic structure exhibit a high resolution and minimal proximity bias upon ArF excimer laser lithography and have high etching resistance.

Abstract: A heat-sensitive transfer image-receiving sheet provided with at least one receptor layer on a support, wherein the receptor layer has a polymer containing a repeating unit derived from a monomer represented by formula (1); and a coating composition for forming the heat-sensitive transfer image-receiving sheet: wherein, R1 represents a hydrogen atom, a halogen atom or a methyl group; L1 represents a divalent linking group; R2 represents an alkylene group having 1 to 5 carbon atoms which may be further substituted; n represents an integer of 1 to 40; Z1 represents a hydrogen atom or a linear, branched or cyclic aliphatic hydrocarbon group having 1 to 30 carbon atoms which may be further substituted; and when n is 2 or more, R2s may be the same or different.

Abstract: A chemically amplified resist composition comprising: (A) a salt represented by the formula (I): wherein R21 represents a C1-C30 hydrocarbon group etc., Q1 and Q2 each independently represent a fluorine atom etc., and A+ represents at least one organic cation selected from a cation represented by the formula (Ia): wherein P1, P2 and P3 each independently represent a C1-C30 alkyl group etc., a cation represented by the formula (Ib): wherein P4 and P5 each independently represent a hydrogen atom etc., and a cation represented by the formula (Ic): wherein P10, P11, P12, P13, P14, P15, P16, P17, P18, P19, P20 and P21 each independently represent a hydrogen atom etc.

Abstract: A positive resist composition includes: (A) a resin containing a repeating unit represented by formula (I) as defined in the specification, of which solubility in an alkali developer increases under an action of an acid; and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: and a pattern forming method uses the positive resist composition.

Abstract: The invention is related to an arylsulfonium salt compound having a polycyclic hydrocarbon structure in a cation moiety.

Abstract: The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Abstract: A positive resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits increased alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a cyclic main chain resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a) derived from an acrylic acid and no fluorine atom.

Abstract: An object of the present invention is to provide a lead-free bismuth glass wherein decrease of the degree of accuracy of the patterning is prevented. Specifically, the present invention provides a lead-free bismuth glass characterized in that said lead-free bismuth glass is used for an optical patterning glass material which is patterned by light irradiation and the optical-absorption coefficient to light with a wavelength of 365 nm is 300 to 3000 cm?1.

Abstract: Provided is a resin having an alicyclic structure in a main chain, which is excellent in etching resistance and developing property, a resist composition for exposure with a high energy radiation using the resin, and a method for forming a pattern using the resist composition. Also provided is a hydrogenated ring-opening metathesis polymer which is comprised of alicyclic skeleton-containing structural units [A], [B] and a structural unit [C] selected from the following general formula [5] and/or [6]: wherein, e and f represent respectively an integer of 0 to 3, wherein the at least one of X1 of the general formula [1] of the structural unit [A], X2 of the general formula [3] and X3 of the general formula [4] of the structural unit [B] is —O—, and wherein the molar ratio of the structural units [A], [B] and [C] satisfies simultaneously that [A]/([B]+[C]) is from 20/80 to 98/2, ([A]+[B])/[C] is from 99/1 to 50/50, and ([A]+[C])/[B] is from 99/1 to 21/79.

Abstract: A chemically amplified positive resist composition comprising (A) a resin which comprises (i) a polymerization unit represented by the formula (I): (ii) a polymerization unit represented by the formula (II): and (iii) at least one polymerization unit selected from the group consisting of a polymerization unit represented by the formula (III): and a polymerization unit represented by the formula (IV): and (B) at least one acid generator.

Abstract: A positive resist composition comprising: (A) a resin showing an increase in the solubility in an alkali developer by the action of an acid; (B) a compound being capable of generating an acid when irradiated with an actinic ray or a radiation; (C) a resin having a silicon-containing repeating unit of a specific structure and being stable to acids but insoluble in an alkali developer; and (D) a solvent; and a pattern making method using the same.

Abstract: A photo-curable resin composition comprising a silphenylene-bearing polymer having a Mw of 3,000-500,000 can be processed to form patterned films having a widely varying thickness from submicron to more than 20 ?m. The cured films have good adhesion to substrates, heat resistance, electrical insulation and chemical resistance.

Abstract: A positive resist composition, which comprises: (A) a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having a repeating unit represented by formula (C) as defined in the specification; and (D) a solvent, wherein a content of the resin as the component (C) is from 0.1 to 20 mass % based on a solid content of the positive resist composition, and a pattern forming method using the same.

Abstract: The present invention relates to a photosensitive resin composition comprising at least a thermoplastic elastomer (a), a photopolymerizable unsaturated monomer (b), and a photopolymerization initiator (c), characterized in that the thermoplastic elastomer (a) comprises at least vinyl aromatic hydrocarbon units, butadiene units, and alkylene units and contains alkylene units not less than 5 wt % and not more than 80 wt % with respect to the total amount of butadiene units and alkylene units. The present invention provides a photosensitive resin composition that simultaneously achieves excellent fine line reproducibility, ester solvent resistance, and prevention of cracks occurring on plate surface.

Abstract: A photosensitive paste is provided with which a member for a display panel having superior visibility can be manufactured with simple steps, and with the photosensitive paste including a soft magnetic powder, a glass powder, and a photosensitive organic component, in which the mass ratio of the soft magnetic powder (A) to the glass powder (B) is in the range of 20/80 to 70/30.

Abstract: A chemically amplified positive resist composition comprising (A) a salt represented by the formula (I): A+?O3S—R??(I) wherein R represents a 9,10-anthraquinonyl group which may be substituted with at least one group selected from the group consisting of a C1-C4 alkyl group, a C1-C4 alkoxy group and a hydroxyl group, and the C1-C4 alkyl group and the C1-C4 alkoxy group may be substituted, and A+ represents an organic counter cation, and (B) a resin which contains a structural unit which has an acid-labile group and which itself is insoluble or poorly soluble in an aqueous alkali solution but becomes soluble in an aqueous alkali solution by the action of an acid.

Abstract: An alkali-developable black photosensitive resin composition for forming a light-shielding barrier wall which comprises, as indispensable components, (A) a carboxyl group-containing photosensitive prepolymer, (B) a photopolymerization initiator, (C) a black pigment, and (D) light-transmitting fine particles. By the use of this composition, light-shielding barrier walls (11) having sufficient light-shielding properties and a height of not less than 20 ?m can be formed by photolithography, without causing undercutting during development. In a preferred embodiment, the black pigment (C) is a metal oxide, preferably iron oxide, and the fine particles (D) are inorganic fine particles having a refractive index of 1.40-1.90, preferably silica.

Abstract: The negative resist composition of the present invention comprises a silsesguioxane resin (A) comprising a constituent unit (a1) represented by the following general formula (I) and a constituent unit (a2) represented by the following general formula (II), an acid generator component (B) which generates an acid upon exposure, and a crosslinking agent component (C): wherein R1 represents a linear or branched alkylene group having 1 to 5 carbon atoms, and

Abstract: A photosensitive composition comprising (A) a resin that is decomposed by the action of an acid to increase solubility in an alkali developing solution, (B) a compound that generates an acid upon irradiation of an actinic ray or radiation, and (C1) a compound having a molecular weight of 1,000 or less and containing an aliphatic ring and an aromatic ring, and a photosensitive composition comprising (A) a resin that is decomposed by the action of an acid to increase solubility in an alkali developing solution, (B) a compound that generates an acid upon irradiation of an actinic ray or radiation, and (C2) a resin containing a hydroxystyrene unit; and a pattern forming method using these photosensitive composition.

Abstract: A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1), wherein R1 represents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more R1s may be the same or different and two or more Xs may be the same or different.

Abstract: A photoresist composition includes a base resin, a copolymer of acrylic acid or methacrylic acid and 3,3-dimethoxypropene, a photoacid generator, an organic base, and an organic solvent, and is used for forming a fine (micro) pattern in a semiconductor device by double patterning. The invention method can markedly reduce the number of steps in etching and hard mask deposition processes, so that work hours and manufacturing costs may be reduced, contributing to an increase in yield of semiconductor devices.

Abstract: In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.

Abstract: There are provided a novel compound represented by a general formula (b1-1) shown below, which is useful as an acid generator for a resist composition and a manufacturing method thereof, a compound useful as a precursor of the novel compound and a manufacturing method thereof, an acid generator, a resist composition and a method of forming a resist pattern.

Abstract: The present invention provides a chemically amplified resist composition comprising: (A) a salt represented by the formula (1) wherein R21, Q1, Q2, and A+ defined in the specification; (B) a salt represented by the formula (II): wherein R22, Q3, Q4, and A?+ are defined in the specification; and (C) a resin which contains a structural unit having a structural unit having an acid-labile group and which itself is insoluble or poorly soluble in an aqueous alkali solution but becomes soluble in an aqueous alkali solution by the action of an acid.

Abstract: A coatable inorganic material is provided, which is suitable for being coated on a substrate in the form of sol-gel solution and then being directly written with thermochemical mode by using a laser beam. The coatable inorganic material is an oxide, in which the chemical element constitution is more than one element selected from Te, Al, Zr, and Ti.

Abstract: A resist composition for electron beam or extreme ultraviolet (EUV), comprising a resin component (A) which exhibits changed alkali solubility under action of acid, and a photoacid generator component (B) that generates acid on exposure, wherein the component (B) comprises at least one onium salt selected from the group consisting of onium salts having an anion represented by formula (b-0-1) or (b-0-2) shown below: wherein X represents an alkylene group having 2 to 6 carbon atoms, in which at least one hydrogen atom is substituted with a fluorine atom; and each of Y and Z independently represents an alkyl group having 1 to 10 atoms, in which at least one hydrogen atom is substituted with a fluorine atom.

Abstract: The main object of the present invention is to provide a photocatalyst composition and a photocatalyst containing layer showing a high activity in a short period of time, and a pattern formed body using the photocatalyst containing layer. To attain the object, the invention provides a photocatalyst composition containing at least a photocatalyst, characterized by including a portion with the signal intensity of the electron spin resonance spectrum derived from the hydroxy radical increased to 1,000 times or more in 1 second within 600 seconds of the start of the ultraviolet ray irradiation at the time of measuring the electron spin resonance spectrum while irradiating the ultraviolet ray.

Abstract: A method is provided for irreversibly coloring a coating composition containing a color former comprising the steps of a) providing a coating composition that contains an UV curable resin, a thermosetting resin or an alkyd resin with the proviso that the coating composition contains no developer nor any additive which may function as developer; b) mixing the coating composition with the color former whereby no color is formed; c) applying the colorless composition obtained in step b) to a substrate; d) in case of a thermosetting resin curing the resin between 100 and 300° C., preferably between 100 and 150° C., whereby no color is formed, in case of alkyd resin drying of the resin at room temperature, whereby no color is formed; e) exposure to UV or high energy radiation below 400 nm whereby the color is formed.

Abstract: A method of fabricating an electronic device is disclosed. The method of fabricating an electronic device comprises providing a substrate. A first conductive layer is formed on the substrate. A silylation polyphenol (PVP) dielectric layer is formed on the first conductive layer. A patterned second conductive layer is formed on the silylation PVP dielectric layer.

Abstract: An etch resistant thermally curable Underlayer for use in a multiplayer liyhographic process to produce a photolithographic bilayer coated substrate, the composition having: (a) at least one cycloolefin polymer comprising at least one repeating unit of Structure (I), and at least one repeating unit of Structure (II), and optionally at least one repeating unit of Structure (III) with the proviso that neither Structure (I) nor Structure (II) nor Structure (III) contains acid sensitive groups. b) at least one cross-linking agent selected from the group consisting of an amino or phenolic cross-linking agent; c) a least one thermal acid generator (TAG); d) at lest one solvent; and e) optionally, at least one surfactant.

Abstract: A positive resist composition that exhibits a large exposure margin, and excellent levels of resolution and dry etching resistance, as well as a method of forming a resist pattern that uses the positive resist composition.

Abstract: An image forming medium includes a substrate and an imaging layer coated on or impregnated into said substrate, where the imaging layer includes as a photochromic material a spiropyran compound having a conjugated pathway, dispersed in a polymeric binder, wherein the photochromic material exhibits a reversible transition between a colorless state and a colored state in response to heat and light.

Abstract: A photoresist composition capable of forming a high resolution pattern without an additional heating process includes an alkali-soluble phenol polymer in an amount of 10 to 70 parts by weight, including at least one unit of Formula 1, a photo-acid generator in an amount of 0.5 to 10 parts by weight, a dissolution inhibitor in an amount of 5 to 50 parts by weight, including at least one unit of Formula 2, and a solvent in an amount of 10 to 90 parts by weight, wherein the amounts of the foregoing components is based on a total of 100 parts by weight of alkali-soluble phenol polymer, photo-acid generator, dissolution inhibitor, and solvent, and wherein Formulas 1 and 2 have the structures: wherein R is a methyl group, wherein R1, R2 and R3 are the same or different and are hydrogen or t-butyl vinyl ether protective groups.

Abstract: A composition comprises a solvent, and an electroconductive substance and an amphiphilic block copolymers having a polyalkenyl ether repeating-unit structure, or a block copolymer enclosing an electroconductive substance. A black ink composition comprises a fine particulate metal having an average particle diameter of not more than 20 nm, an amphiphilic block copolymer, and a solvent. A method for forming an electroconductive pattern by applying the composition. A method for forming an electroconductive pattern by applying a composition comprises a block copolymer enclosing an electroconductive substance, system to form an electroconductive pattern on the substrate.

Abstract: The present invention relates to new polymers that contain repeat units of phenol and photoacid-labile esters that contain an alicyclic group, preferably a bulky group that suitably may contain 7 to about 20 carbons, such as an alkyladamantyl, ethylfencyl, tricyclo decanyl, or pinanyl group. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.

Abstract: A positive type photosensitive image-forming material for use with an infrared laser is provided. The material includes a substrate, a layer (A) containing not less than 50% by weight of a copolymer which contains, as a copolymerization component, not less than 10% by mol of at least one of the following monomers (a-1) to (a-3), wherein (a-1) is a monomer having in the molecule a sulfonamide group wherein at least one hydrogen atom is linked to a nitrogen atom, (a-2) is a monomer having in the molecule an active imino group represented by the following general formula (I): and (a-3) is a monomer selected from acrylamide, methacrylamide, acrylate, methacrylate and hydroxystyrene, which respectively have a phenolic hydroxyl group; and a layer (B) containing not less than 50% by weight of an aqueous alkali solution-soluble resin having a phenolic hydroxyl group. The layer (A) and the layer (B) are laminated on the substrate in that order.