Abstract: A photoconductor which comprises, on a conductive substrate, a photoconductive layer of amorphous silicon hydride to which a first impurity consisting essentially of an element of Group Va or Group VIa of the Periodic Table is added. The contents of the first impurity and hydrogen in the amorphous silicon hydride layer vary in section from one side toward the other side of said layer.

Abstract: An electrophotographic recording material, composed of an electrically conductive substrate; a first layer provided on the electrically conductive substrate and composed of an amorphous selenium-tellurium alloy containing form 0.05 to 15 weight % tellurium; a second layer disposed on the first layer and composed of an amorphous selenium-tellurium alloy containing from 15 to 60 weight % tellurium; and a third layer provided on the second layer and composed of an amorphous alloy of selenium and from 0.05 to 5 weight % of one arsenic or tellurium. The electrophotographic recording material is particularly useful in an electrophotographic recording system which includes an infrared radiation means, such as an infrared solid state laser.

Abstract: Multi-layer photoconductive elements comprising one or more layers of hydrogenated amorphous silicon are provided with sensitizing and supersensitizing layers which function to alter the spectral sensitivity of the element and thereby enhance its usefulness in such applications as photovoltaic devices, thin film electronic devices, and electrophotographic photoreceptors. The sensitizing layer contains a phthalocyanine which serves as a spectral sensitizing agent and the supersensitizing layer contains an arylamine which serves as a chemical sensitizing agent. The sensitizing and supersensitizing layers serve by their conjoint action to inject charge into the hydrogenated amorphous silicon layer in response to photogeneration within the sensitizing layer that is activated by radiation to which the hydrogenated amorphous silicon layer exhibits a lower degree of sensitivity.

Abstract: An arsenic-selenium photoreceptor is provided wherein said photoreceptor is characterized by a gradient concentration of arsenic increasing from the bottom surface to the top surface of the photoreceptor such that the arsenic concentration is about 5 wt. % at a depth of about 5 to 10 microns from the top surface of the photoreceptor and is about 30 to 40 wt. % at the top surface of the photoreceptor.

Abstract: An electrophotographic photoreceptor is disclosed. The photoreceptor contains a specific styryl dye in which the tertiary amino moiety is substituted with aryl groups and a specific organic photoconductive compound in which the nitrogen atoms are substituted with aryl groups. The photoreceptor exhibits high sensitivity and excellent preservation stability and heat stability.

Abstract: An image-forming member for electrophotography comprises a photoconductive layer including as constituting layers, a hydrogenated amorphous silicon layer and an amorphous inorganic semiconductor layer. The amorphous inorganic semiconductor layer is laminated on the hydrogenated amorphous silicon layer to thereby provide a heterojunction.

Abstract: The invention disclosed relates to a photosensitive member which comprises a conductive substrate, a first amorphous silicon: germanium layer, an amorphous silicon layer formed on said first layer and having a thickness of about 10 to 100 .mu.m and a second amorphous silicon: germanium layer formed on said amorphous silicon layer and having a thickness of less than about 4 .mu.m. The photosensitive member of the present invention has improved sensitivity toward long wavelength light and excellent chargeability, and is free of residual potential and interference phenomena.

Abstract: A photoreceptor for electrophotography utilizing a-Si:N:H:F, wherein a stable high-sensitive layer is provided and the time-lapse variation in characteristics is reduced in the use of an a-Si.sub.1-x N.sub.x layer as a sensitive layer.

Abstract: The present invention relates to a photosensitive member containing an a-Si:Ge layer with an a-Si intermediate layer.A photosensitive member containing a-Si:Ge has an excellent sensitivity to long wave light so that it is suitable for an electrophotographic system equipped with laser beam printer. However, the sensitivity of the member had not been improved because of their weak dark resistance and lower mobility of carrier in general.In the present invention, it is provided a photosensitive member having a-Si:Ge layer excellent in the sensitivity to long wave length by controlling the balance between the Ge content and the thickness of the a-Si:Ge layer and the concentration of oxygen or oxygen and carbon in the electroconductive layer.

Abstract: A photoconductive device including a conductive substrate, a photoconductive layer of amorphous silicon containing at least hydrogen and a surface protection layer applied on the photoconductive layer a dopant is added in the photoconductive layer at least near the interface with the surface protection layer, and the concentration of the dopant increases in the direction perpendicular to the interface. The surface protection layer has an optical energy gap larger than that of the photoconductive layer.A further photoconductive device comprising a conductive substrate; a photoconductive layer of amorphous silicon applied on the conductive substrate and a surface protection layer of amorphous silicon applied on said photoconductive layer wherein the surface protection layer contains oxygen, and is doped with a IIIb element.

Abstract: An electrophotosensitive member for use in electrophotography includes a plurality of amorphous silicon and amorphous silicon:germanium layers that are arranged in an alternating fashion. The two outermost layers are made up of amorphous silicon so that each amorphous silicon:germanium layer is sandwiched between two amorphous silicon layers.

Abstract: Though a-Si:Ge has a high absorption of long wave light, so that it can be used to improve the electrophotosensitive members in the sensitivity, and it is expected as photosensitive members for printers using semiconductor laser. However, a-Si:Ge has a tendency to prevent the movement of a carrier generated to lower a sensitivity and increase a residual potential.In the present invention, the above problems are improved by forming a depletion layer in a-Si:Ge layer to improve the mobility in forward direction of the carrier.

Abstract: The present invention provides an electrophotosensitive member comprising laminating a layer composed substantially of amorphous silicon, a layer composed substantially of amorphous silicon:germanium and a layer composed substantially of amorphous silicon in this order on an electroconductive substrate, an electrophotosensitive member comprising laminating a layer composed substantially of amorphous silicon, a layer composed substantially of amorphous silicon:germanium and a layer composed substantially of amorphous silicon in this order on an electroconductive substrate, characterized in that said layer composed substantially of amorphous silicon:germanium is situated away from said substrate by a range of 20 to 80% based on the total thickness of these layers.

Abstract: A light-receiving member comprises light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms and a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity provided on a substrate successively from the substrate side, said light-receiving layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction.

Abstract: A photoconducting sulfur- and hydrogen-doped amorphous carbon is prepared by deposition from a plasma glow discharge in a gas mixture which comprises at least one hydrocarbon and at least one sulfur source.

Abstract: The invention relates to an electrophotographic member which is highly sensitive to the light of long wavelengths. Amorphous silicon is used as a photosensitive base member. A long wavelength sensitizing region has a narrower forbidden band gap width than that of the base member, and consists of at least two semiconductor films that are laminated and that have at least different forbidden band gap widths or different conductivities. An increased number of semiconductor films may, of course, be laminated to constitute the sensitizing region.

Abstract: A process for producing a photoreceptor is disclosed. A gaseous compound of the constituent materials of the photoreceptor is decomposed by glow discharge in the presence of a metal, thereby forming a constituent layer containing atoms and or ions of the metal.

Abstract: A blocking layer is formed of amorphous silicon carbide (a-Si:C) or amorphous silicon nitride (a-Si:N) on a conductive substrate. A first photoconductive layer formed of a-Si:C or a-Si:N on the blocking layer contains 1.times.10.sup.-6 to 1.times.10.sup.-3 atomic % of a Group III or V element in the Periodic Table. A second photoconductive layer formed of on the first photoconductive layer contains 1.times.10.sup.-6 to 1.times.10.sup.-3 atomic % of a Group III or V element. The second photoconductive layer has a thickness of 0.1 to 45 .mu.m. With this multilayer structure, a photosensitive member having high charging and potential holding properties can be obtained.

Abstract: A method of manufacturing an electrophotographic photoreceptor having an amorphous silicon layer formed as a photoconductive layer, on an electrically conductive support member. The manufacturing method includes the steps of preparing the amorphous silicon layer as the photoconductive layer by employing Si.sub.2 H.sub.6 (disilane) as a main raw material gas through a glow discharge process, and simultaneously, adding nitrogen and boron to the main raw material gas, with the unsaturated bond being stabilized by hydrogen or hydrogen and fluorine.

Abstract: An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A photoconductive member, having a support and a photoconductive light receiving layer comprising a matrix of silicon atoms containing at least one of hydrogen atoms and halogen atoms provided on said support, said light receiving layer having a layer region with a layer thickness of at least 20 .ANG. from the side of the free surface, in which the spin density measured by Electron Spin Resonance is 1.0.times.10.sup.20 spins/cm.sup.3 or less.

Abstract: In an electrophotographic recording material comprising an electrically conductive base material and at least one photoconductive layer containing a photoconductor, a binder and at least three sensitizing dyes of which at least two are 3,3'-dimethylindolenine compounds, such as bis-(3,3'-dimethylindolenyl)-trimethinecyanines and -pentamethinecyanines, having a sensitizing action in different wavelength regions, it is possible to sensitize various organic and inorganic photoconductors within the range from about 400 to 700 nm.

Abstract: The present invention relates to a photosensitive member having a photoconductive layer of amorphous silicon. On the photoconductive layer, an amorphous silicon insulating layer is formed and this layer includes carbon and an element in Group IIIA of the Periodic Table. The Group IIIA element is included to control the conductivity of the insulating layer in such fashion that the majority carrier thereof is opposite in polarity to the charging polarity.

Abstract: The present invention relates to a photosensitive member which includes a photoconductive layer of amorphous silicon and an insulating layer formed thereover and including amorphous silicon, carbon and an element in Group III A of the Periodic Table. Carbon is included in an amount of about 35 to 65 atomic % at the outer most surface of the insulating layer and a minimum amount at the interface with the photoconductive layer. The Group III A element is included to control a majority carrier of the insulating layer to be a polarity opposite to the polarity of charging.

Abstract: A photoconductive member is provided which has substrate for photoconductive member and a light-receiving layer having photoconductivity with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity consisting of an amorphous material containing silicon atoms are successively provided from the aforesaid substrate side, said light-receiving layer containing carbon atoms together with a substance (C) for controlling conductivity in a distribution state such that, in said light-receiving layer, the maximum value C(PN).sub.max of the distribution concentration of said substance (c) in the layer thickness direction exists within said second layer region (S) and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.

Abstract: A light-receiving member has a substrate and a light receiving layer having photoconductivity containing an amorphous material comprising a matrix of silicon atoms provided on said substrate, said light receiving layer having, from the said support side with respect to the layer thickness direction of said layer, a first layer region containing atoms of the group III of the periodic table at higher concentration toward the side of said substrate and a second layer region containing atoms of the group III of the periodic table and nitrogen atoms.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer exhibiting photoconductivity and comprising an amorphous material comprising silicon atoms as a matrix and at least one member selected from the group consisting of hydrogen atoms and halogen atoms as a constituting atom, characterized in that the amorphous layer has a first layer region containing oxygen atoms and a second layer region containing an atom of Group III or an atom of Group V of the Periodic Table and existing interiorly at the support side, and the first layer region and the second layer region share in common at least a portion of said mutual region, and there is the relation:t.sub.B /(T+t.sub.B).ltoreq.0.4where t.sub.B is the thickness of the second layer region and T is a difference between the thickness of the amorphous layer and the thickness of the second layer region t.sub.B.

Abstract: An electrophotographic photoresponsive device for use in electrophotography comprised of a supporting substrate, and an amorphous silicon composition containing from about 25 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, nitrogen, or arsenic. Also disclosed is a photoresponsive electrophotographic device comprised of a supporting substrate, an uncompensated amorphous silicon layer and an amorphous silicon composition containing from about 100 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, wherein the compensation increases from zero percent compensation to one percent compensation, for a distance of from about 0.

Abstract: Disclosed is a photoresponsive imaging member comprised of amorphous carbon.

Abstract: A photoconductive device comprising a conductive substrate and a photoconductive layer applied on the conductive substrate, which photoconductive layer is made of amorphous silicon containing at least hydrogen, wherein the photoconductive layer contains hydroxy radicals.Another photoconductive device comprising a conductive substrate, a photoconductive layer of amorphous silicon containing at least hydrogen and a surface protection layer applied on the photoconductive layer; wherein a dopant is added in the photoconductive layer at least near the interface with the surface protection layer, and the concentration of the dopant increases in the direction perpendicular to the interface and the surface protection layer has an optical energy gap larger than that of the photoconductive layer.

Abstract: Photoconductive films contain specified azulenium salt compounds. Electrophotographic photosensitive members are provided with a photoconductive film containing at least one of the specified azulenium salt compounds.

Abstract: The electrophotographic element comprising mounting on an electrically conductive substrate a Se-Te-Cl alloy system photoconductive layer which contains Te in the range of 6 to 12 wt. % of Se, Cl in the range of 10 to 30 ppm of the total amount of Se and Te and O.sub.2 as impurity 10 ppm or less of the whole alloy, is superior especially in temperature and light fatigue characteristics.

Abstract: The present invention relates to an electrophotographic sensitive member comprising an amorphous fluorinated silicon photoconductive layer.

Abstract: A copper activated photoconductor is disclosed having reduced photosensitivity and the general formula X:Cu wherein X is selected from the group consisting of CdS, CdSe, and Cd(S,Se), and an iron content of from about 0.01% to about 0.05% by weight the presence of which reduces the photosensitivity of the photoconductor by about 30%.A process is disclosed for reducing the photosensitivity of a photoconductor. The process involves forming a relatively uniform admixture consisting essentially of copper, iron, the copper and iron being added in amounts which result in a copper level of from about 0.01% to about 0.09% and an iron content of from about 0.01% to about 0.

Abstract: A photoconductive member, which comprises a support for photoconductive member and a light receiving layer having a layer constitution comprising a first layer region comprising an amorphous material containing Ge.sub.x Si.sub.1-x (0.95<x.ltoreq.1) and a second layer region comprising silicon atoms exhibiting photoconductivity, two layer regions being provided successively from the support side.

Abstract: A structure of a photoconductive film related to a target of an image pickup tube of the photo conductivity type is disclosed. This photoconductive film is formed from mainly Se and Te is added in a central part thereof. Further, As, which is considered to form a deep trap level which captures electrons in Se and GaF.sub.3, etc. which form negative space charges by capturing electrons in Se are added in the region adjacent to the region where Te exists. In addition, a thickness of film in the region where GaF.sub.3, etc. exists is selected to be thinner (not smaller than 20 .ANG. and not larger than 90 .ANG.) than a value which has been adopted so far.

Abstract: A vapor-deposited film of selenium as a photoreceptor for electrophotography contains not more than 50 parts per million of oxygen. In producing the film, the oxygen content in the starting material selenium is controlled so that the resulting film contains oxygen within the specified range. The original oxygen content is reduced by vacuum distillation of the material selenium in a high vacuum, reduced-pressure distillation in high purity hydrogen, or preservation of the selenium shot in vacuo or in an inert gas. The starting material is obtained by mixing or melting selenium with a predetermined amount of selenium dioxide, or by carrying out vacuum distillation either of selenium at a vacuum degree of about 10.sup.-2 torr and thereby converting part of the material selenium into selenium dioxide, or of a mixture of selenium and a predetermined amount of selenium dioxide. The vacuum degree during the vapor deposition is controlled so that the oxygen content in the resulting film is 50 ppm or less.

Abstract: Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.

Abstract: Disclosed is an electrographic imaging member consisting essentially of a supporting substrate, a hydrogenated amorphous silicon photogenerating layer, and in contact therewith a charge transporting layer of plasma deposited silicon oxide containing at least 50 atomic percent of oxygen.

Abstract: An electrophotographic imaging member is disclosed consisting essentially of a supporting substrate, a charge transport layer substantially free of arsenic and tellurium and consisting essentially of selenium and a halogen selected from the group consisting of from about 4 parts per million by weight to about 13 parts per million by weight of chlorine and from about 8 parts per million by weight to about 25 parts per million by weight of iodine and a photoconductive charge generator layer comprising selenium, from about 5 percent to about 20 percent by weight tellurium, from about 0.1 percent to about 4 percent by weight arsenic, and a halogen selected from the group consisting of up to about 70 parts per million by weight of chlorine and up to about 140 parts per million by weight of iodine, one surface of the charge generator layer being in operative electrical contact with the charge transport layer and the other surface of the charge generator layer being exposed to the ambient atmosphere.

Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing a substance for controlling conductivity (C) in a distributed state such that, in said light receiving layer, the maximum value of the content of said substance (C) in the layer thickness direction exists within said second layer region (S) or at the interface with said first layer region (G) and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.

Abstract: An improved process for the preparation of mixed squaraine compositions which comprises reacting squaric acid, an aromatic amine, and a fluoroaniline, in the presence of an aliphatic alcohol, and an optional azeotropic substance.

Abstract: A light-receiving member comprises a substrate for light-receiving member and a light-receiving layer having photoconductivity provided on said substrate, said light-receiving layer comprising from the side of said substrate a first layer (I) comprising an amorphous material containing silicon atoms, a second layer (II) comprising an amorphous material containing silicon atoms and germanium atoms and a third layer (III) comprising an amorphous material containing silicon atoms and oxygen atoms, and the germanium atoms contained in said second layer (II) being distributed ununiformly in the layer thickness direction of said layer.

Abstract: A photosensitive material for use in electrophotography having a chargeability improved by incorporating 1 to 500 ppm As oxide in a Se-As (As: 20 to 40% by weight) system photosensitive layer.

Abstract: A photoconductive member comprises a substrate for the photoconductive member and a light receiving layer exhibiting photoconductivity provided on said substrate comprising an amorphous material containing silicon atoms and germanium atoms, the light receiving lager having a layer region (N) containing nitrogen atoms, and the layer region (N) having a region (X) in which the content C (N) of nitrogen atoms in the layer thickness direction smoothly and continuously increases toward the upper surface of the light receiving layer.

Abstract: An electrophotographic element which comprises forming, on an electrically conductive substrate, an intermediate layer designed to function so that carriers homopolar with those injected from said substrate at the time of charging may become majority carrier, and forming, on said intermediate layer, a photoconductive layer.

Abstract: A photoconductive member having a substrate for photoconductive member and a light-receiving layer having photoconductivity provided on said substrate is prepared in which the light-receiving layer comprises from the side of said substrate a first layer (I) constituted of an amorphous material containing silicon atoms, a second layer (II) constituted of an amorphous material containing silicon atoms and germanium atoms and a third layer (III) constituted of an amorphous material containing silicon atoms and carbon atoms, and the germanium atoms contained in said second layer (II) being distributed ununiformly in the layer thickness direction of said layer.

Abstract: A photoconductive member is provided which comprises a substrate for a photoconductive member and a light receiving layer provided on said substrate having a layer constitution comprising (1) a first layer in which a layer region (G) comprising an amorphous material containing germanium atoms and a layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, and (2) a second layer which is constituted of an amorphous material comprising silicon atoms and at least one of carbon atoms and nitrogen atoms, said first layer containing oxygen atoms and having a first layer region, a third layer region and a second layer region, with oxygen atom distribution concentration in the layer thickness direction of C(1), C(3), and C(2), respectively, in the order mentioned from the substrate side with a proviso that C(3) does not solely take the maximum value and when either one of C(1) and C(2) is zero, the other two are not zero

Abstract: A photoconductive member comprises a substrate and a layer constituted of an amorphous material containing Si and Ge and exhibiting photoconductivity, said layer having a layer region containing nitrogen ununiformly in the direction of layer thickness, the distribution concentration curve of nitrogen in the direction of layer thickness being smooth and the maximum distribution concentration being present in said layer.An amorphous layer of Si containing at least one of oxygen and carbon may overlie the above mentioned layer.

Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer having photoconductivity comprising an amorphous material containing silicon atoms and germanium atoms, said light receiving layer containing carbon atoms and having a first layer region, a third layer region and a second layer region with the carbon atom content in the layer thickness direction of C(1), C(3) and C(2), respectively, in the order from the substrate side [with the proviso that when C(3) cannot solely be the maximum and either one of C(1) and C(2) is zero, the other two are not zero and not equal to each other, or when C(3) is zero, the other two are not zero, or when none of C(1), C(2) and C(3) is zero, the three of C(1), C(2) and C(3) cannot be equal at the same time and C(3) cannot solely be the maximum].