Abstract: A photoconductive member comprises a support and an amorphous layer comprising a first layer region and a second layer region, the first layer region having photoconductivity comprising an amorphous material which comprises silicon atoms as a matrix and at least one member selected from hydrogen atoms and halogen atoms as a constituent, the first layer region having a layer region (I) containing an impurity controlling the electroconductivity type at the support side, and the second layer region comprising an amorphous material comprising at least both silicon and carbon as constituents.

Abstract: An electrophotographic photoreceptor comprising a conductive layer and a photosensitive layer of vapor-deposited selenium-antimony alloy film formed thereon is disclosed. The photosensitive layer has an average antimony concentration of 5 to 21 wt % and the center layer thereof except for the skin layer on either side has a change in antimony concentration within 2 wt % in any region that is 1000 deep .ANG. from the surface of the skin layer.

Abstract: An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A process for producing a photoconductive member, which comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances is characterized in that said starting substances are constituted of at least one substance selected from the first group consisting of substances(O) containing oxygen atoms as constituent atom, substances(N) containing nitrogen atoms as constituent atom and substances(C) containing carbon atoms as constituent atom, and at least two compounds selected from the second group consisting of the compounds of the formula:Si.sub.n H.sub.2n+2 (A)wherein n is a positive integer and the compounds of the formula:Si.sub.m H.sub.l X.sub.

Abstract: A photoconductive member comprises a support and an amorphous layer compsed of a first layer region composed of a photoconductive amorphous silicon containing p- or n-type impurity distributed nonuniformly and continuously in the layer thickness direction, and a second layer region composed of Si.sub.a C.sub.1-a (0.4<a<1), [Si.sub.b C.sub.1-b ].sub.c H.sub.1-c (0.5<b<1, 0.6.ltoreq.c<1), [Si.sub.d C.sub.1-d ].sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1, X: halogen) or [Si.sub.f C.sub.1-f ].sub.g (H+X).sub.1-g (0.47<f<1, 0.8.ltoreq.g<1, X: halogen].

Abstract: An electrophotographic image-forming member comprises a substrate for electrophotography and an amorphous layer which is laid on said substrate and constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said substrate being constituted of aluminum oxide containing chemi-structurally water at least on the surface thereof, and said amorphous layer having a layer region containing at least one member selected from the group consisting of oxygen atom, nitrogen atom and carbon atom in at least a part thereof, the content of said member in said layer region being distributed unevenly in the direction of the thickness of said layer.

Abstract: A photoconductive film comprising a photo-conductive layer which is mainly made of selenium and a region added with tellurium in a direction of the thickness of the layer, wherein at least either one of a portion in a direction of hole flow of said region added with tellurium and a portion in the hole flow of another region which is located adjacent to said region added with tellurium is doped with at least one member selected from the group consisting of an oxide, a fluoride and elements which belong to the group II, III and VII, which are capable of forming a negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such oxide, fluoride and element include CuO, In.sub.2 O.sub.3, SeO.sub.2, V.sub.2 O.sub.5, MoO.sub.3, WO.sub.3, GaF.sub.2 InF.sub.3, Zn, Ga, In, Cl, I, Br and the like. The after image characteristic ascribable to incident light of high intensity can be significantly improved.

Abstract: An electrophotographic image-forming member comprises (1) a substrate for electrophotography which has a surface coating of an aluminum oxide containing water chemi-structurally and (2) a photoconductive layer which is laid on said surface coating of the substrate and constituted of an amorphous material containing at least one of hydrogen atom and halogen atom in a matrix of silicon atom, said photoconductive layer containing at least one of oyxgen atom, nitrogen atom, and carbon atom.

Abstract: Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing as the constituent atom at least one kind of atoms selected from the group consisting of oxygen atoms, carbon atoms and nitrogen atoms in a distribution state which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution state which is ununiform and continuous in the direction of layer thickness, said first layer region existing internally below the surface of said amorphous layer.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing at least one kind of atoms selected from the group consisting of oxygen atoms, carbon atoms and nitrogen atoms as constituent atoms in a distribution which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms of an element belonging to the group III of the periodic table as constituent atoms in a distribution which is ununiform and continuous in the direction of layer thickness.

Abstract: A xeroradiographic material comprising a substrate at least one surface of which is electrically conductive, and an X-ray sensitive layer provided on the conductive surface of the substrate and essentially consisting of an organic binder, .gamma.-form crystal grains of a bismuth oxide-based compound oxide and n-type semiconductor grains dispersed in the organic binder. The material is made by dispersing these grains in an organic binder solution, applying the dispersion onto the conductive surface of the substrate, drying the coat of the dispersion at a temperature in a range not lower than the boiling point of the solvent but below the softening point of the organic binder to form an X-ray sensitive layer, and heat-treating the X-ray sensitive layer at a temperature in a range not lower than the softening point of the organic binder but below the temperature at which the organic binder begins decomposing.

Abstract: Disclosed is a photosensitive plate for electrophotography, which comprises a conductive substrate and a layer of a composition formed by dispersing a photoconductor in a binder resin, which is formed on the substrate, wherein the resin binder comprises an epoxy resin component and an amine type curing agent component and the resin binder further comprises an acid anhydride as the ozone deterioration preventing agent.This photosensitive plate is excellent in the ozone resistance and the moisture resistance.

Abstract: A photoconductive layer comprises a support and an amorphous layer. The amorphous layer is photoconductive, comprises silicon as matrix and hydrogen and/or halogen, and has a layer region containing group III atoms which is distributed such that the distribution is continuous in the direction of layer thickness and said atoms are more enriched on the aforesaid support side than on the opposite side to the aforesaid support side in said layer.

Abstract: An aqueous composition-sensitive photoconductive composition useful in the preparation of aqueous composition decoatable electrophotographic elements, such elements and low cost lithographic printing plates prepared from said elements the aqueous composition-sensitive photoconductive composition comprising the admixture of an inorganic photoconductor, an organic photoconductor and an aqueous composition-sensitive resin, and, if desired, to increase exposure speed, a dyestuff photosensitizer.

Abstract: An electrophotographic element comprising a photoconductive layer consisting essentially of a Bi-containing As.sub.2 Se.sub.3 layer on an electrically conductive substrate.

Abstract: An electrophotographic image-forming member comprises a substrate for electrophotography and a photoconductive layer which is laid on said substrate and constituted of an amorphous material containing at least one of hydrogen atom or halogen atom in a matrix of silicon atom, said substrate being constituted of aluminum oxide containing chemi-structually water at least on the surface thereof.

Abstract: The metal substrate of an electrophotographic member is provided with a selenium-tellurium alloy layer containing 5-30% tellurium, 10-5,000 ppm of a metallic element of the fifth main group, and 10-100 ppm of a halogen. A preferred embodiment contains 15% tellurium, 40 ppm arsenic, and 40 ppm chlorine. The addition of the metallic element of the fifth main group to the selenium-tellurium alloy results in a stabilization of charging potentials in multicycle operation.If the metal substrate is an aluminum drum, the electrophotographic member can be used as a copying drum in high-speed copiers.

Abstract: A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containing oxygen atoms in at least a part thereof, the content of the oxygen atoms in said layer region being distributed unevenly in the direction of the thickness of said layer.

Abstract: Disclosed is a photosensitive material for electrophotography comprising a conductive substrate and a layer of a composition comprising a dispersion of a photoconductive pigment in a binder resin, which is formed on the conductive substrate, wherein a (dialkypyrophosphato) organic titanate is incorporated into said composition.This photosensitive material is excellent in the ozone resistance and the moisture resistance.

Abstract: A hydrogen containing amorphous silicon photoconductive layer exhibits infrared absorption peaks between wavenumber of 2000 cm.sup.-1 where Si-H bonds are predominant and wavenumber of 2090 cm.sup.-1 where Si-H.sub.2 bonds are predominant and has an absorption coefficient ratio of the peaks of 2090 cm.sup.-1 to 2000 cm.sup.-1 of about 0.2 to 1.7. Preferably, the photoconductive layer is formed by a glow discharge decomposition and may contain small amount of oxygen and 10 to 20,000 ppm of Group IIIA impurity of the Periodic Table.

Abstract: The electrophotographic photosensitive member has a photoconductive layer containing photoconductive particles each of which has a water insoluble compound of a metal element of Group VIII of the Periodic Table deposited on the surface.

Abstract: The hydrogenated amorphous silicon photoconductive layer has an infrared spectrum containing a peak at 880.+-.10 cm.sup.-1 (intensity of this peak being referred to as I.sub.A) and a peak at 970.+-.10 cm.sup.-1 (intensity of this peak being referred to as I.sub.B) in the infrared spectrum, the ratio I.sub.A /I.sub.B, being not more than 1.0.

Abstract: The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H.sup.+, He.sup.+, Ne.sup.+, Ar.sup.+, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-UV light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1.times.10.sup.12 to 1.times.10.sup.17, and with sufficient energy, from 100 to 500 KeV, to provide photosensitivity enhancement.

Abstract: A thiopyrylium compound having t-butyl groups at the 2- and 6-positions of the thiopyrylium nucleus, having a main absorption near the red region, i.e., 600 to 700 nm but substantially no side absorption near 400 nm, and useful as a sensitizer for a photoconductive composition.

Abstract: A photoreceptor device comprises a conductive substrate and an electrophotographic layer thereon. The electrophotographic layer comprises copper-chlorine activated cadmium sulfide blended with a light-absorbing material.

Abstract: An electrophotographic photosensitive material in which organic photoconductor is sensitized by a compound represented by the formula, ##STR1## wherein A, B, D and E represent independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a phenyl group or a 5- or 6-membered heterocyclic ring residue, and at least two of them represent a phenyl group; F is an alkyl, phenyl or styryl group; m is a number of 0 or 1, and n is a number of zero, 1 or 2, provided that when m is 1, n is 0; and X.sup..crclbar. represents an anion residue, has a high sensitivity to the whole range of visible light as well as to the infrared rays of up to around 1,100 nm, and is stable in the potential characteristics such as surface potential and dark damping factor and capable of separation photographing by use of a color separation filter.

Abstract: In an electrophotographic photosensitive material comprising an electroconductive substrate having positioned thereon a photosensitive layer comprising as main components titanium dioxide and a binding material, the photosensitivity and whiteness can be improved by allowing a specific cyanine dye compound to exist in said photosensitive layer.

Abstract: A photoconductive layer sensitized by a compound of the general formula: ##STR1## in which: R.sup.1 and R.sup.2 independently represent a hydrogen atom, an alkyl or substituted alkyl group, an aryl or substituted aryl group, an aralkyl or substituted aralkyl group, a cycloaliphatic or substituted cycloaliphatic group or a heterocyclic or substituted heterocyclic group providing R.sup.1 and R.sup.2 do not both represent cyclic groups of aromatic nature, or R.sup.1 and R.sup.2 together may represent the necessary atoms to complete a non-aromatic heterocyclic ring,R.sup.3, R.sup.4, R.sup.5 and R.sup.6 independently represent a hydrogen atom or any substituent providing the sum of their .sigma..sub.p constants has a value of less than +0.5, or R.sup.3 and R.sup.4 and/or R.sup.5 and R.sup.6 may represent the necessary atoms to complete an alicyclic or aromatic ring, R.sup.3 and R.sup.2 and/or R.sup.1 and R.sup.6 may represent the necessary atoms to complete a non-aromatic heterocyclic ring,R.sup.7 and R.sup.

Abstract: Photoconductive particles are prepared by the reaction of a water-soluble metal salt with an ion exchange resin having an anion which reacts with the metal ion of the water-soluble metal salt to produce a water insoluble metal compound and the deposition of the water insoluble metal compound resulting from the reaction on the surface of the photoconductive particles.

Abstract: A layered electrophotographic photoconductor comprising an electrically conductive base; a charge transporting layer, formed on the electrically conductive base, which charge transporting layer comprises a selenium-tellurium alloy, doped with halogen; and a charge generating layer, formed on the charge transporting layer, which charge generating layer comprises a selenium-tellurium-arsenic alloy, doped with halogen.

Abstract: A copper-activated mercury-containing cadmium selenide telluride infrared-responsive photoconductor.

Abstract: An ambipolar electrophotographic plate and materials used in the manufacture thereof including a photoconductive layer formulated of selenium, selenium-arsenic alloy or selenium-arsenic-tellurium alloy containing indium as a dopant which extends the range for electrons without noticeable deterioration of the long range for holes.

Abstract: A photoconductive composition for electrophotography containing a photoconductive material, a sensitizing dye comprising a specific very stable sensitizing dye for red light to infrared rays, and a film-forming polymer binder.

Abstract: An electrophotographic light-sensitive element and process for the production thereof are described, wherein the element comprises an electrically conductive support coated with a photoconductive layer composed of a silicon- and carbon-based amorphous material doped with hydrogen and fluorine.

Abstract: A noncrystalline silicon powder having excellent photoconductivity is described, comprising silicon and hydrogen, exhibiting an infrared absorption spectrum characterized by absorption peaks centered at about 2000 cm.sup.-1 and 630 cm.sup.-1, wherein the height of the absorbance peak at 2000 cm.sup.-1 is at least one-tenth the height of the peak centered at 630 cm.sup.-1, and exhibiting a spin density of not more than 10.sup.18 cm.sup.-3 determined by electron spin resonance spectroscopy; the noncrystalline silicon powder is used as highly efficient photoconductor in photoconductive compositions utilized for the production of electrophotographic photoreceptors.

Abstract: A function separated type electrophotographic light-sensitive member and a process for production thereof are described, said member comprising an electrically conductive support, a light-sensitive layer made of a hydrogen-doped amorphous silicon semiconductor, and an organic electric charge transport layer containing at least one positive charge transport carrier selected from the group consisting of pyrazolines, aryl-alkanes, arylketones, arylamines and chalcones.

Abstract: An electrophotographic photoconductor, formed on a conductive substrate by spray pyrolysis, comprising essentially a major amount of cadmium sulphide and a minor amount of zinc sulphide. The cadmium layer is at least three microns in thickness and is formed in three zones. The zone adjacent the metal substrate, adapted to form a contact layer, bears an amount of lead sulphide; the outermost zone, adapted to absorb light, is doped with a minor amount of copper to eliminate fatigue; and the intermediate zone, which is necessary to increase the surface potential, is adapted to transport light-generated charge and is doped with a minor amount of chlorine. The process is carried on in the atmosphere with three different aqueous solutions of reagents to form the three different zones. The photoconductive layer is microcrystalline in structure and bears adsorbed oxygen.

Abstract: This invention is generally directed to an inorganic overcoated photoresponsive device comprised of a substrate, a layer of electron trapping material, this layer being comprised of halogen doped selenium, halogen doped arsenic selenium alloys, and mixtures thereof; a hole transport layer in operative contact with the electron trapping layer, this layer being comprised of a halogen doped selenium arsenic alloy wherein the percentage of selenium present by weight is from about 99.5 percent to about 99.9 percent, the percentage of arsenic present by weight is from about 0.5 percent to about 0.

Abstract: In a photosensitive member for electrophotography comprising a photoconductive layer containing photoconductive cadmium sulfide particles dispersed in a binder material, the member comprises a particular additive to the photoconductive layer, said additive being selected from the group consisting of iron, nickel, cobalt and compounds thereof.

Abstract: Cadium sulfide for electrophotography is produced by reacting hydrogen sulfide with a solution containing cadmium sulfate, sulfuric acid and hydrochloric acid of a low concentration, and then firing the resulting cadmium sulfide without adding a donor impurity other than that derived from the hydrochloric acid.

Abstract: 2,6-Di-tert-Butyl-4-substituted thiopyrylium salt represented by formula (I), a process for production of said salt and a photoconductive composition containing said salt. ##STR1## wherein Z.sup..crclbar. is an anion, X is a hydrogen atom, an aryl group, a substituted aryl group or an alkyl group, and R.sup.1 and R.sup.2 are the same or different and include alkyl groups.

Abstract: Disclosed is an electrophotographic plate having a laminated structure comprising a first Se layer containing 3 to 10% by weight of As, a second Se layer containing 40 to 47% by weight of Te and 3 to 10% by weight of As and a fourth Se layer consisting solely of Se or comprising Se and up to 10% by weight of As or an organic semiconductor layer, wherein a substrate is arranged so that at least the face of the substrate which is contiguous to the face of one of said first Se layer and said fourth Se layer or organic semiconductor layer, that is located on the outer side of the laminated structure, is electrically conductive.It is preferred that the fourth Se layer be formed by vacuum evaporation deposition while maintaining the substrate temperature at 50.degree. to 80.degree. C. The residual potential of the electrophotographic plate can be reduced.

Abstract: An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, the photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 5 to 20 wt. % and halogen, with a concentration in the range of 5 to 500 ppm, selected from the group consisting of fluorine, chlorine, bromine and iodine, in the photosensitive layer, with the concentration of tellurium substantially uniform or increasing in the direction toward the surface of the photosensitive layer and the ratio of the concentration of tellurium near the electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 65 or more:100.

Abstract: 2,6-Di-tert-butyl-4-[5-(2,6-di-tert-butyl-4H-thiopyran-4-ylidene)penta-1,3- dienyl]thiopyrylium salts, which are novel, colorless, transparent, having an adsorption in the far infrared to near infrared region and capable of imparting high sensitivity to photoconductive substance; process for producing the salts; and a photoconductive composition containing the salt.

Abstract: An electrophotographic plate comprising a conductive substrate, a photoconductive-insulative layer overlaying the substrate and a transparent, electrically active, organic, electron transport layer overlaying the photoconductive-insulative layer in which the photoconductive layer comprises a Se--Te or Se--As mixture in the range of 90-97.5 atomic percent Se or 60-97.5 atomic percent, respectively, and wherein the thicknesses of the photoconductive layer and transport overlayer range between 40 to 100 micrometers and 1 to 5 micrometers, respectively.

Abstract: A photoconductive insulating layer for an electrophotographic sensitive member formed of a fine powder of CdS.nCdCO.sub.3, wherein 0<n.ltoreq.4, bonded by an insulating resin and having manganese stearate dispersed therein. Advantageously the CdS.nCdCO.sub.3 contains copper as an acceptor impurity in an amount of between about 0.025 and 0.1 grain atomic weight of copper per 100 gram atomic weight of cadmium, the manganese stearate is present in an amount of about 2 to 4 parts by weight per 100 parts by weight of CdS.nCdCO.sub.3 and is preferably adherent thereto, the layer is between 10 and 100 microns thick and the CdS.nCdCO.sub.3 particle size is about 1 to 2 microns or less. In producing the layer the CdS.nCdCO.sub.3 (Cu) is produced by reacting Cd, Cu and CO.sub.

Abstract: A photoconductive coating which comprises a crystalline deposit of a wholly inorganic material, in the preferred form comprising cadmium sulfide, of almost perfect stoichiometry, either with or without small amounts of dopant.The coating is deposited on a suitable substrate such as a thin, clear, flexible polyester sheet with an intervening layer of ohmic material such as indium-tin oxide in a sputtering method that results in unusual properties. The deposit can be made on metal substrates if desired, but the greater utility is in its application to a transparent substrate so that a transparent electrophotographic member is formed suitable for many uses.Two important properties worthy of mention are that the coating is such that a charge density may be maintained on its surface (surface charge) which is ten to one hundred times greater than known photoconductive coatings and that there is no photoconductive fatigue.

Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic %H, is used as a photoconductive layer for electrophotographic photosensitive member.

Abstract: A photosensitive material for use in electrophotography which comprises a conductive support, a first layer consisting essentially of a substance capable of generating a conductive carrier through light absorption and an electron donor or an electron acceptor, and a second layer consisting essentially of an electron acceptor or an electron donor, to wit, a substance constituting the opposite party of the electron donor or the electron acceptor contained in the first layer, said first and second layers being formed in that order on said conductive support.