Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer having photoconductivity comprising an amorphous material containing silicon atoms and germanium atoms, said light receiving layer containing nitrogen atoms and having a first layer region, a third layer region and a second layer region with the nitrogen atom content in the layer thickness direction of C(1), C(3) and C(2), respectively, in the order from the substrate side (with the proviso that when C(3) cannot solely be the maximum and either one of C(1) and C(2) is zero, the other two are not zero and not equal to each other, or when C(3) is zero, the other two are not zero, or when none of C(1), C(2) and C(3) is zero, the three of C(1), C(2) and C(3) cannot be equal at the same time and C(3) cannot solely be the maximum).

Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer having a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing carbon atoms.

Abstract: A photoconductive member, is provided which has a support, a first layer having photoconductivity containing an amorphous material comprising silicon atoms as a matrix provided on said support and a second layer containing silicon atoms and carbon atoms as essential components provided on said first layer, wherein said first layer contains at least one kind of atoms selected from the group III of the periodic table together with nitrogen atoms, with the nitrogen atoms having a substantially uniform concentration distribution within said first layer and the group III atoms of the periodic table having a depth concentration profile of said atoms with respect to the layer thickness direction having the maximum concentration at the end surface on the side of said support or in the vicinity thereof and having the concentration of said atoms tending to decrease continuously toward the second layer.

Abstract: A photoconductive member is provided which has a substrate for photoconductive member, and a light-receiving layer comprising (1) a first layer with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided on said substrate from the aforesaid substrate side, and (2) a second layer comprising an amorphous material containing silicon atoms and at least one of carbon atoms and nitrogen atoms, said first layer having a layer region (O) containing oxygen atoms, wherein the depth profile of oxygen atoms in the layer thickness direction in said layer region (O) is increased smoothly and continuously toward the upper end surface of the first layer.

Abstract: A photoconductive member comprises a substrate and a light receiving layer having photoconductivity which comprises an amorphous material containing silicon atoms and germanium atoms, the germanium atoms being distributed non-uniformly in the layer thickness direction in the light receiving layer and nitrogen atoms being contained in the light receiving layer.

Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing nitrogen atoms.

Abstract: A photoconductive member comprises a support for a photoconductive member and a light receiving layer overlaying the support comprising a first layer region (G) comprising an amorphous material containing silicon atoms and germanium atoms and a second layer (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms, the first layer region (G) and the second layer region (S) being provided in this order from the support side, and the distribution of germanium atoms in the said first layer (G) being not uniform in the layer thickness direction and nitrogen atoms being contained in the light receiving layer. There may be provided on the light receiving layer a layer comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms.

Abstract: A vapor-deposited film of selenium or selenium alloy as a photoreceptor for electrophotography comprises selenium or a selenium alloy and phosphorus contained therein in an amount of not less the 0.5 ppm and adjusted to attain a desired contrast potential. The selenium alloy is selected from Se-Te, Se-As, Se-Bi, and Se-Sb alloys. The film is produced either by adding phosphorus to stock selenium or selenium alloy and then vacuum-depositing the phosphorus-containing selenium or selenium alloy or by simultaneously vapor-depositing selenium or selenium alloy and elemental phosphorus or a phosphorus compound.

Abstract: A photoconductive member comprises a substrate, a layer composed of an amorphous material comprising Si and Ge, said layer having a layer region (C) containing carbon atoms. The layer region (C) has a region (X) where the concentration of carbon atoms increases in the direction of layer thickness toward the upper surface of said layer.An amorphous layer of silicon containing at least one of nitrogen and oxygen may overlie said layer.

Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing nitrogen atoms together with a substance for controlling conductivity (C) in a distributed state such that, in said light receiving layer, the maximum value C(PN).sub.max of the content of said substance (C) in the layer thickness direction exists within said second layer region (S) or at the interface between said first and second layer region and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.

Abstract: A photoconductive member comprises a support for a photoconductive member and a light receiving layer constituted of a first layer region (G) comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region (S) comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, the first layer region (G) and the second layer region (S) being provided in the mentioned order on the support, the distribution of germanium atoms in the first layer region (G) being ununiform in the direction of layer thickness, and carbon atoms being contained in the light receiving layer.

Abstract: A photoconductive film comprises an azulenium salt represented by the general formula (1) ##STR1## wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, and R.sub.7 are each independently hydrogen, halo or a monovalent organic residue; or at least one of the combinations of R.sub.1 with R.sub.2, R.sub.3 with R.sub.4, R.sub.4 with R.sub.5, R.sub.5 with R.sub.6, and R.sub.6 with R.sub.7 may form an unsubstituted or substituted aromatic ring; R.sub.8 and R.sub.9 are each independently unsubstituted or substituted alkyl, aryl, or aralkyl; or R.sub.8 and R.sub.9, together with the nitrogen atom to which they are attached, may be joined to form an aromatic ring; R.sub.10, R.sub.11, R.sub.12, and R.sub.13 are each independently hydrogen, halo, alkyl, alkoxy, or hydroxyl; and n is 0, 1, or 2.

Abstract: A printing member for electrostatic photocopying, comprises a substrate having a conductive surface and a photoelectric-sensitive, electrically chargeable layer deposited on the conductive surface of the substrate. The electrically chargeable layer has a non-single crystal semiconductor layer having a built-in-potential, or the non-single crystal semiconductor layer and an insulating or semi-insulating layer.

Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer constitution in which a layer region (G) comprising an amorphous material containing germanium atoms and a layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer having a layer region (O) containing oxygen atoms, the depth profile of oxygen atoms in said layer region (O) being increased smoothly and continuously toward the upper end surface of the light receiving layer.

Abstract: A photoconductive member comprises a support and a light receiving layer comprising a first layer region comprising at least germanium atoms and being crystallized at least a portion thereof, a second region comprising an amorphous material comprising at least both of silicon atoms and germanium atoms and a third layer region comprising an amorphous material comprising at least silicon atoms, and exhibiting photoconductivity said layer regions being provided successively in this order from the said support side.

Abstract: A photoconductive member comprises a support for photoconductive member and a light-receiving layer provided on said support having a layer constitution in which a layer region (G) comprising an amorphous material containing germanium atoms and a layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the support side, said light-receiving layer having a first layer region (1), a third layer region (3) and a second layer region (2), each containing oxygen atoms, with the distribution concentrations in the layer thickness direction of C(1), C(3) and C(2), respectively, in the order mentioned from the support side, provided that when C(3) cannot be solely the maximum, and either one of C(1) and C(2) is 0, the other two are not 0 and not equal, or when C(3) is 0, the other two are not 0.

Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer consititution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing oxygen atoms together with a substance for controlling conductivity (C) in a distributed state such that, in said light receiving layer, the maximum value C(PN).sub.max of the content of said substance (C) in the layer thickness direction exists within said second layer region (S) or at the interface with said first layer region (G) and, in said second layer region(S), said substance (C) is distributed in greater amount on the side of said substrate.

Abstract: An electrophotographic photosensitive member has a conductive substrate, a first layer structure with a single layer made mainly of amorphous silicon formed on the substrate, and a second layer structure including multiple layers also mainly made of amorphous silicon layered in succession on the first layer structure. The plurality of second layers includes at least two high resistance layers having a relatively high resistance value and at least one low resistance layer having a relatively low resistance value compared to the high resistance value. The layers of the second layer structure are layered alternately on the first layer structure so that the first and last layers in the second layer structure are high resistance layers.

Abstract: A photoconductive member is provided which comprises a substrate and a light receiving layer having photoconductivity which comprises an amorphous material containing silicon atoms and germanium atoms, the distribution of germanium atoms therein being nonuniform in the layer thickness direction, and carbon atoms being contained in the light receiving layer.Said photoconductive member can further comprise thereon another layer which comprises amorphous material containing silicon atoms as a matrix and at least one kind of atoms selected from the group of nitrogen atoms and oxygen atoms.

Abstract: An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A photoconductive composition comprises a photoconductor and a sensitizer. The sensitizer has the formula ##STR1## wherein R represents alkyl; R1 represents H, alkyl or aryl; R2 represents the atoms required to complete a hetero or carboxyclic ring; A.sup.- represents an anion; and n represents the valency of the anion. The composition is sensitive to both laser light sources and tungsten light sources and is useful in electrophotographic reproduction.

Abstract: An electrophotographic photosensitive member constituted of an electroconductive supporting substrate and a photoconductive layer provided on said substrate, said photoconductive layer being composed primarily of a microcrystalline silicon or a layered product of a microcrystalline silicon and an amorphous silicon.

Abstract: Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.

Abstract: A printing member for electrostatic photocopying, comprises a substrate having a conductive surface and a photoelectric-sensitive, electrically chargeable layer deposited on the conductive surface of the substrate. The electrically chargeable layer has a non-single crystal semiconductor layer having a built-in-potential, or the non-single crystal semiconductor layer and an insulating or semi-insulating layer.

Abstract: A photoconductive member comprising a support and a light receiving layer provided on said support, having photoconductivity containing silicon atoms as a matrix and at least hydrogen atoms as constituent atom, said light receiving layer having a layer region with depth profile such that the content of hydrogen atoms contained therein is decreased in the direction of layer thickness toward both ends of said layer.

Abstract: An electrophotographic imaging member is described comprising a substrate, a charge transport layer, a thin continuous interface layer consisting essentially of halogen doped selenium, and at least one selenium-tellurium alloy photoconductive charge generating layer. This electrophotographic imaging member may contain other layers such as a thin protective overcoating layer suitable for Carlson type imaging processes. An electrophotographic imaging process employing this electrophotographic imaging member is also described.

Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.

Abstract: Photoresponsive devices, including layered photoresponsive devices comprised of a photoconductive layer of squaraine compositions of the following formula: ##STR1## wherein R.sub.1, R.sub.2, and R.sub.3 are independently selected from the group consisting of alkyl substitutents and aryl substituents.

Abstract: Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.

Abstract: A photoconductive member comprises a support for a photoconductive member; a first amorphous layer comprising an amorphous material containing silicon atoms as a matrix and exhibiting photoconductivity, said first amorphous layer having a first layer region containing oxygen atoms as constituent atoms in a distribution state which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution state which is continuous in the direction of layer thickness, said first layer region existing internally beneath the surface of said first amorphous layer; and a second amorphous layer comprising an amorphous material represented by any of the following formulae:Si.sub.a C.sub.1-a (0.4<a<1) (1)(Si.sub.b C.sub.1-b).sub.c H.sub.1-c (0.5<b<1, 0.6.ltoreq.c<1) (2)(Si.sub.d C.sub.1-d).sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1) (3)(Si.sub.f C.sub.1-f).sub.g (H+X).sub.

Abstract: A process for the preparation of an electrostatographic photosensitive device comprising combining a sodium additive comprising sodium carbonate, sodium bicarbonate, sodium selenite, sodium hydroxide or mixtures thereof with trigonal selenium particles, an organic resin binder and a solvent for the binder to form a milling mixture, milling the milling mixture to form a uniform dispersion, applying the dispersion to a substrate in an even layer and drying the layer.

Abstract: A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containing carbon atoms in at least a part thereof, the content of the carbon atoms in said layer region being distributed unevenly in the direction of the thickness of said layer.

Abstract: A photoconductive member, comprises a support for a photoconductive member, a first amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a martix, said first amorphous layer having a first layer region containing oxygen atoms in a distribution which is continuous and ununiform in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution which is continuous and ununiform in the direction of layer thickness, and a second amorphous layer comprising an amorphous material represented by any of the following formulae:Si.sub.a C.sub.1-a (0.4<a<1) (1)(Si.sub.b C.sub.1-b).sub.c H.sub.1-c (0.5<b<1, 0.6.ltoreq.c<1) (2)(Si.sub.d C.sub.1-d).sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1) (3)(Si.sub.f C.sub.1-f).sub.g (H+X).sub.1-g (0.47<f<1, 0.8.ltoreq.g<1) (4)(wherein X represents a halogen atom).

Abstract: A photoconductive member comprising a support and a silicon amorphous layer, and the silicon amorphous layer has a first layer region containing at least one of oxygen, nitrogen and carbon and a second layer region containing an element of Group III. The first layer exists internally within the amorphous layer below its surface.

Abstract: A photoreceptor of electrophotography having, on a substrate, an amorphous silicon (a-Si) layer formed by relying on plasma CVD technique, wherein the a-Si layer is formed in the presence of silane, diborane and nitrogen, and possibly phosphine as required. This a-Si layer may have a multiple layer structure comprising a thin a-Si layer formed in the presence of silane and diborane or nitrogen, and a principal a-Si layer formed in the presence of silane, diborane and nitrogen, and possibly phosphine as required, but in such instance the amount of phosphine which is added is less than three times that of diborane. Such photoreceptor has a good sensitivity to light rays, has long service life, and is not harmful to human body.

Abstract: A photoconductive member comprises a substrate and a light receiving layer having photoconductive provided on said support, comprising silicon atoms as a matrix and at least halogen atoms as constituent atoms said light receiving layer having a depth profile with respect to the layer thickness direction such that the concentration of halogen atoms contained therein is increased from the said substrate side toward the surface side of the photoconductive member.

Abstract: An amorphous silicon based photoconductive element for use in electrophotographic copying processes, which exhibits a suitably low dark discharge rate with other good photoelectric properties, is composed of an electrically conductive support having applied thereto, in sequence, a barrier layer consisting essentially of a doped hydrogen-containing amorphous silicon, an intermediate layer consisting essentially of substantially undoped hydrogen-containing amorphous silicon, an intermediate barrier layer consisting essentially of doped hydrogen-containing amorphous silicon and a main, charge receiving layer consisting essentially of substantially undoped hydrogen-containing amorphous silicon.

Abstract: An electrophotographic photosensitive member has a selenium type photoconductive layer containing 8000 ppm or less oxygen based on selenium. The member is free from a fatigue due to repeated use.

Abstract: An electrophotographic recording material comprises a conductive substrate, a first photoconductive selenium layer containing halogen disposed on the substrate, and a second photoconductive selenium layer containing arsenic disposed on the second photo conductive layer. The first photo conductive layer disposed on the substrate additionally contains arsenic.

Abstract: Disclosed are the use of novel squaraine compositions selected from the group consisting of bis(2-fluoro-4-methylbenzylaminophenyl)squaraine, bis(2-fluoro-4-methyl-p-chlorobenzylaminophenyl)squaraine, bis(2-fluoro-4-methyl-p-fluorobenzylphenyl)squaraine, and bis(2-fluoro-4-methyl-m-chlorobenzylaminophenyl)squaraine, in photoresponsive devices, particularly layered photoresponsive devices which are sensitive to infrared and/or visible illumination.

Abstract: A photoconductive member comprising a support for photoconductive member and an amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a matrix is characterized in that said amorphous layer has a first layer region containing, as constituent atoms, oxygen atoms in a distribution which is nonuniform and continuous in the direction of the layer thickness and a second layer region containing, as constituent atoms, the atoms (A) belonging to group III or group V of the periodic table in a distribution which is continuous in the direction of the layer thickness, said second layer existing internally beneath the surface of said amorphous layer.

Abstract: A CdS:Cu,Cl electrophotographic material suitable for use in the xerographic mode, contains 200 to 300 ppm Cu, 0.02 to 0.06 percent Cl, and has very good contrast voltage.

Abstract: Disclosed is a photosensitive member, or an electrophotographic photosensitive member, characterised by having a photoconductive layer comprising at least one of an amorphous hydrogenated and/or fluorinated silicon germanium and an amorphous hydrogenated and/or fluorinated silicon germanium carbide, a first amorphous hydrogenated and/or fluorinated silicon carbide layer formed on the photoconductive layer and a second amorphous hydrogenated and/or fluorinated silicon carbide layer formed beneath said photoconductive layer.

Abstract: The invention disclosed relates to a photosensitive member having excellent photosensitivity characteristics in the visible light region as well as in the near infrared region. According to first embodiment of the invention, the photosensitive member comprises an electrically conductive substrate, an amorphous silicon-germanium photoconductive layer having a thickness of about 0.1 to 3 microns, and an amorphous silicon photoconductive layer of 5 to 30 micron thick formed on the amorphous silicon-germanium photoconductive layer. Second embodiment of the photosensitive member comprises a substrate, an amorphous silicon semiconductor layer of 5 to 100 micron thick and an amorphous silicon-germanium photoconductive layer formed on the amorphous silicon semiconductor layer.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having a layer constitution comprising a first layer region comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, said first and second layer regions being provided successively from the side of said support.

Abstract: A photoconductive member comprises a support for photoconductive member and an amorphous layer comprising an amorphous material containing silicon atoms as a matrix and exhibiting photoconductivity, said amorphous layer having a first layer region containing, as constituent atoms, oxygen atoms and a second layer region containing, as constituent atoms, the atoms belonging to the group V of the periodic table in a distribution which is continuous in the direction of the layer thickness and more enriched toward the side of said support.

Abstract: A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containing nitrogen atoms in at least a part thereof, the content of the nitrogen atoms in said layer region being distributed unevenly in the direction of the thickness of said layer.

Abstract: The invention disclosed relates to an electrophotographic sensitive member having a photoconductive layer of amorphous silicon. The photoconductive layer is preferably formed by the glow discharge process and includes about 10.sup.-5 to 5.times.10.sup.-2 atomic % of oxygen, about 10 to 40 atomic % of hydrogen and about 10 to 20000 ppm of a Group IIIb impurity of the Periodic Table. A barrier layer of amorphous silicon having a thickness of about 0.2 to 5 microns and containing about 0.05 to 1 atomic % of oxygen may also be formed between a substrate and said photoconductive layer.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer containing an amorphous material comprising silicon atom as a matrix and having photoconductivity, said amorphous layer comprising a first layer region containing oxygen atom as a constituent atom, the oxygen atom being distributed continuously in the direction of the layer thickness and enriched at the support side, and a second layer region containing an atom of the group III of the periodic table as a constituent atom, said first layer region being internally present at the support side in the amorphous layer, and the layer thickness T.sub.B of said second layer region and a layer thickness T resulted from subtracting T.sub.B from the layer thickness of the amorphous layer satisfying the relation, T.sub.B /T.ltoreq.1.

Abstract: Glow discharge method and apparatus useful for coating electrophotographic photoreceptors in the form of drums and plates are described. Improved photoreceptors using amorphous silicon which accepts a high surface voltage in the dark and discharges to a low residual voltage under illumination are also described.