Abstract: A semiconductor package includes a package substrate, a plurality of semiconductor devices stacked on the package substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the package substrate and the plurality of semiconductor devices, and a molding resin at least partially surrounding the plurality of semiconductor devices and the plurality of underfill fillets. The plurality of underfill fillets include a plurality of protrusions that protrude from spaces between each of the plurality of semiconductor devices or between the package substrate and each of the plurality of semiconductor devices. At least two neighboring underfill fillet protrusions of the plurality of protrusions form one continuous structure without an interface therebetween.

Abstract: A structure includes core substrates attached to a first side of a redistribution structure, wherein the redistribution structure includes first conductive features and first dielectric layers, wherein each core substrate includes conductive pillars, wherein the conductive pillars of the core substrates physically and electrically contact first conductive features; an encapsulant extending over the first side of the redistribution structure, wherein the encapsulant extends along sidewalls of each core substrate; and an integrated device package connected to a second side of the redistribution structure.

Abstract: A semiconductor package includes a lower package, an interposer on the lower package, and an under-fill layer between the interposer and the lower package. The interposer includes a through hole that vertically penetrates the interposer. The under-fill layer includes an extension that fills at least a portion of the through hole.

Abstract: A chip package structure includes an interposer structure that contains a package-side redistribution structure, an interposer core assembly, and a die-side redistribution structure. The interposer core assembly includes at least one silicon substrate interposer, and each of the at least one silicon substrate interposer includes a respective silicon substrate, a respective set of through-silicon via (TSV) structures vertically extending through the respective silicon substrate, a respective set of interconnect-level dielectric layers embedding a respective set of metal interconnect structures, and a respective set of metal bonding structures that are electrically connected to the die-side redistribution structure. The chip package structure includes at least two semiconductor dies that are attached to the die-side redistribution structure, and an epoxy molding compound (EMC) multi-die frame that laterally encloses the at least two semiconductor dies.

Abstract: A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a package substrate and an interposer substrate over the package substrate. The interposer substrate has a first surface facing the package substrate and a second surface opposite the first surface. A first semiconductor device is disposed on the first surface, and a second semiconductor device is disposed on the second surface. Conductive structures are disposed between the interposer substrate and the package substrate. The first semiconductor device is located between the conductive structures. A first side of the first semiconductor device is at a first distance from the most adjacent conductive structure, and a second side of the first semiconductor device is at a second distance from the most adjacent conductive structure. The first side is opposite the second side, and the first distance is greater than the second distance.

Abstract: A semiconductor package includes an encapsulated semiconductor device and a redistribution structure. The encapsulated semiconductor device includes a semiconductor device encapsulated by an encapsulating material. The redistribution structure overlays the encapsulated semiconductor device and includes a plurality of vias and a redistribution line. The plurality of vias are located on different layers of the redistribution structure respectively and connected to one another through a plurality of conductive lines, wherein, from a top view, an angle greater than zero is included between adjacent two of the plurality of conductive lines. The redistribution line is disposed under the plurality of conductive lines and connects corresponding one of the plurality of vias and electrically connected to the semiconductor device through the plurality of vias.

Abstract: A semiconductor device includes an inductance structure and a shielding structure. The shielding structure is arranged to at least partially shield the inductance structure from external electromagnetic fields. The shielding structure includes a shielding structure portion arranged along a side of the inductance structure such that the shielding structure portion is around at least a portion of a perimeter of the inductance structure.

Abstract: At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a first substrate with a first surface and a second surface opposite to the first surface, a second substrate adjacent to the first surface of the first substrate, and an encapsulant encapsulating the first substrate and the second substrate. The first substrate defines a space. The second substrate covers the space. The second surface of the first substrate is exposed by the encapsulant. A surface of the encapsulant is coplanar with the second surface of the first substrate or protrudes beyond the second surface of the first substrate.

Abstract: Integrated circuit IC package with one or more IC dies including solder features that are thermally coupled to the IC. The thermally coupled solder features (e.g., bumps) may be electrically insulated from solder features electrically coupled to the IC, but interconnected with each other by one or more metallization layers within a plane of the IC package. An in-plane interconnected network of thermal solder features may improve lateral heat transfer, for example spreading heat from one or more hotspots on the IC die. An under-bump metallization (UBM) may interconnect two or more thermal solder features. A through-substrate via (TSV) metallization may interconnect two or more thermal solder features. A stack of IC dies may include thermal solder features interconnected by metallization within one or more planes of the stack.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a die stack disposed over the substrate, a heat spreader disposed over the substrate and having a surface facing the substrate, and a thermal interface material (TIM) disposed between the die stack and the heat spreader. A bottommost die of the die stack includes a surface exposed from remaining dies of the die stack from a top view perspective; and the TIM is in contact with the exposed surface of the bottommost die and the surface of the heat spreader, and is in contact with a sidewall of at least one of the plurality of dies of the die stack.

Abstract: Systems and methods for multi-height interconnect structures for a semiconductor device are provided herein. The multi-height interconnect structure generally includes a primary level semiconductor die having a primary conductive pillar and a secondary conductive pillar, where the primary conductive pillar has a greater height than the secondary conductive pillar. The semiconductor device may further include a substrate electrically coupled to the primary level semiconductor die through the primary conductive pillar and a secondary level semiconductor die electrically coupled to the primary level semiconductor die through the secondary conductive pillar. The multi-height pillars may be formed using a single photoresist mask or multiple photoresist masks. In some configurations, the primary and secondary conductive pillars may be arranged on only the front-side of the dies and/or substrate.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device comprising multiple encapsulating layers and multiple signal distribution structures, and a method of manufacturing thereof.

Abstract: Some embodiments of the invention provide a three-dimensional (3D) circuit that is formed by stacking two or more integrated circuit (IC) dies to at least partially overlap and to share one or more interconnect layers that distribute power, clock and/or data-bus signals. The shared interconnect layers include interconnect segments that carry power, clock and/or data-bus signals. In some embodiments, the shared interconnect layers are higher level interconnect layers (e.g., the top interconnect layer of each IC die). In some embodiments, the stacked IC dies of the 3D circuit include first and second IC dies. The first die includes a first semiconductor substrate and a first set of interconnect layers defined above the first semiconductor substrate. Similarly, the second IC die includes a second semiconductor substrate and a second set of interconnect layers defined above the second semiconductor substrate.

Abstract: A method of manufacturing an electronics assembly includes forming a base layer using an additive manufacturing process, forming a first thermally and electrically conductive intermediate layer onto the base layer using an additive manufacturing process, placing an electronics component onto the first thermally and electrically conductive intermediate layer, the electronics component comprising a plurality of vias, forming a second thermally and electrically conductive intermediate layer over the first thermally and electrically conductive intermediate layer and over at least a portion of the electronics component using an additive manufacturing process, wherein a material of the second thermally and electrically conductive intermediate layer extends through the vias to contact the first thermally and electrically conductive intermediate layer and the vias, thereby forming a bond therebetween, and forming a protective layer over at least a portion of the second thermally and electrically conductive intermedia

Abstract: An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.

Abstract: A semiconductor package includes a substrate, a die stack on the substrate, and connection terminals between the substrate and the die stack. The die stack includes a first die having a first active surface facing the substrate, the first die including first through electrodes vertically penetrating the first die, a second die on the first die and having a second active surface, the second die including second through electrodes vertically penetrating the second die, and a third die on the second die and having a third active surface facing the substrate. The second active surface of the second die is in direct contact with one of the first or third active surfaces.

Abstract: An embodiment is a method including: attaching a first die to a first side of a first component using first electrical connectors, attaching a first side of a second die to first side of the first component using second electrical connectors, attaching a dummy die to the first side of the first component in a scribe line region of the first component, adhering a cover structure to a second side of the second die, and singulating the first component and the dummy die to form a package structure.

Abstract: A semiconductor package includes a first substrate including a first recess formed in a top surface of the first substrate, a first semiconductor chip disposed in the first recess and mounted on the first substrate, an interposer substrate disposed on the first semiconductor chip and including a second recess formed in a bottom surface of the interposer substrate, an adhesive layer disposed in the second recess and in contact with a top surface of the first semiconductor chip, a plurality of connection terminals spaced apart from the first recess and connecting the first substrate to the interposer substrate, and a molding layer disposed between the first substrate and the interposer substrate.

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a substrate, a semiconductor die thereon, electrically coupled to the substrate, and an interposer adapted to connect the substrate to a circuit board. The interposer can include a major surface, a recess in the major surface, a first plurality of interconnects passing through the interposer within the recess to electrically couple the substrate to a circuit board, and a second plurality of interconnects on the major surface of the interposer to electrically couple the substrate to the circuit board, wherein each of the second plurality of interconnects comprises a smaller cross-section than some of the first plurality of interconnects.

Abstract: Disclosed is a semiconductor package comprising a first semiconductor chip, a second semiconductor chip on a first surface of the first semiconductor chip, and a plurality of conductive pillars on the first surface of the first semiconductor chip and adjacent to at least one side of the second semiconductor chip. The first semiconductor chip includes a first circuit layer adjacent to the first surface of the first semiconductor chip. The second semiconductor chip and the plurality of conductive pillars are connected to the first surface of the first semiconductor chip.

Abstract: A package structure includes a first package including a first substrate and a first molded portion disposed on the first substrate; and a rigid-flexible substrate disposed on at least a portion of the first package and having a rigid region and a flexible region. The first molded portion is disposed between the first substrate and the rigid-flexible substrate.

Abstract: A method of fabricating a wiring board with an embedded interposer substrate includes preparing a main substrate, forming a recess on the main substrate, placing an interposer substrate into the recess, electrically connecting a second pad of the interposer substrate and the first pad of the main substrate, and filling a gap between the interposer substrate and the main substrate with an underfill. The recess exposes a first pad of the main substrate. A second pad of interposer substrate and the first pad of the main substrate are made of the same metal and formed in different outer surface profiles. The underfill entirely touches side surfaces and a bottom surface of the interposer substrate.

Abstract: A memory device, a semiconductor device and their manufacturing methods are provided. The method may include: providing a first die and a plurality of second dies, the first die having a first pad, each of the plurality of second dies having a second pad, each of the second pads having a through hole; stacking the plurality of second dies on the first die with the second pads aligned with the first pad. In any two adjacent second dies, the through hole closer to the first die is not larger than the through hole farther away; forming a connecting hole passing through the through holes, exposing the first pad, and comprising a plurality of hole sections; and forming a conductive body in the connecting hole. This method simplifies the manufacturing process, reduces the cost thereof, and improves the production yield.

Abstract: A method including stacking a number of silicon dice such that one or more edges of the dice are in vertical alignment, where the one or more edges include a number of connection pads. The method also includes positioning a connecting wire on a substantially perpendicular axis to the one or more edges. The connecting wire includes a number of solder blocks formed thereon. The solder blocks are spaced at intervals associated with a distance between a first set of aligned connection pads on the dice. The connecting wire is positioned such that the solder blocks are in contact with the first set of aligned connection pads. The method also includes applying heat to cause the solder blocks to reflow and physically and electrically couple the connecting wire to the connection pads.

Abstract: Embodiments include electronic packages and methods of forming such packages. An electronic package includes a memory module comprising a first memory die. The first memory die includes first interconnects with a first pad pitch and second interconnects with a second pad pitch, where the second pad pitch is less than the first pad pitch. The memory module also includes a redistribution layer below the first memory die, and a second memory die below the redistribution layer, where the second memory die has first interconnects with a first pad pitch and second interconnects with a second pad pitch. The memory module further includes a mold encapsulating the second memory die, where through mold interconnects (TMIs) provide an electrical connection from the redistribution layer to mold layer. The TMIs may be through mold vias. The TMIs may be made through a passive interposer that is encapsulated in the mold.

Abstract: Provided is a stacked semiconductor package including a package base substrate including a plurality of signal wires and at least one power wire, wherein a plurality of top downsurface connecting pads and a plurality of bottom surface connecting pads are on a top surface and a bottom surface of the package base substrate, respectively; and a plurality of semiconductor chips that are sequentially stacked on the package base substrate and are electrically connected to the top surface connecting pads, the plurality of semiconductor chips including a first semiconductor chip that is a bottommost semiconductor chip, and a second semiconductor chip that is on the first semiconductor chip, wherein the signal wires are arranged apart from a portion of the package base substrate, the first portion that overlaps a first edge of the first semiconductor chip, the first edge overlapping the second semiconductor chip in a vertical direction.

Abstract: A semiconductor package includes a package substrate including: first and second bond finger arrays, each of the first and second finger arrays arranged in a first direction on a surface of the package substrate; a first semiconductor chip disposed on the surface of the package substrate and including a first chip pad array corresponding to the first bond finger array; a second semiconductor chip disposed on the surface of the package substrate and including a second chip pad array corresponding to the second bond finger array; first bonding wires connecting bond fingers of the first bond finger array to chip pads of the first chip pad array; and second bonding wires connecting bond fingers of the second bond finger array to chip pads of the second chip pad array.

Abstract: A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.

Abstract: A semiconductor package includes a first substrate, a second substrate provided on the first substrate, a semiconductor chip provided between the first substrate and the second substrate, solder structures extending between the first substrate and the second substrate and spaced apart from the semiconductor chip, and bumps provided between the semiconductor chip and the second substrate. The solder structures electrically connect the first substrate and the second substrate.

Abstract: An integrated circuit (IC) device includes a first substrate and a first structure on a front surface of the first substrate. The first structure includes a first interlayer insulating layer structure including a plurality of first conductive pad layers spaced apart from one another at different levels of the first interlayer insulating layer structure. The IC device includes a second substrate on the first substrate and a second structure on a front surface of the second substrate, which faces the front surface of the first substrate. The second structure includes a second interlayer insulating layer structure bonded to the first interlayer insulating layer structure. A through-silicon via (TSV) structure penetrates the second substrate and the second interlayer insulating layer structure. The TSV structure is in contact with at least two first conductive pad layers of the plurality of first conductive pad layers located at different levels.

Abstract: A multi-chip package and a manufacturing method thereof are provided. The multi-chip package includes: an interposer including a dielectric body, a plurality of semiconductor bodies separated by the dielectric body, a through via penetrating through the dielectric body, and a wiring structure located in each of the plurality of semiconductor bodies; a plurality of semiconductor chips located side by side on a first surface of the interposer and electrically connected to the wiring structure; an encapsulant located on the first surface of the interposer and encapsulating at least a portion of the plurality of semiconductor chips; and a redistribution circuit structure located on a second surface of the interposer opposite to the first surface of the interposer and electrically connected to the plurality of semiconductor chips through the through via.

Abstract: A semiconductor package includes: a first semiconductor chip including a first surface and a second surface opposite to each other and including first through electrodes; at least a second semiconductor chip stacked on the first surface of the first semiconductor chip and comprising second through electrodes electrically connected to the first through electrodes; and a molding layer contacting the first surface of the first semiconductor chip and a side wall of the at least one second semiconductor chip and including a first external side wall connected to and on the same plane as a side wall of the first semiconductor chip, wherein the first external side wall of the molding layer extends to be inclined with respect to a first direction orthogonal to the first surface of the first semiconductor chip, and both the external first side wall of the molding layer and the side wall of the first semiconductor chip have a first slope that is the same for both the first external side wall of the molding layer and the

Abstract: A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.

Abstract: A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.

Abstract: Embodiments of three-dimensional (3D) memory devices and methods for forming the 3D memory devices are disclosed. In an example, a method for forming a 3D memory device is disclosed. A first semiconductor device is formed on a first substrate. A first single-crystal silicon layer is transferred from a second substrate onto the first semiconductor device on the first substrate. A dielectric stack including interleaved sacrificial layers and dielectric layers is formed on the first single-crystal silicon layer. A channel structure extending vertically through the dielectric stack is formed. The channel structure includes a lower plug extending into the first single-crystal silicon layer and including single-crystal silicon. A memory stack including interleaved conductor layers and the dielectric layers is formed by replacing the sacrificial layers in the dielectric stack with the conductor layers.

Abstract: Provided is a module which has a package-on-package structure including a redistribution layer and can be easily reduced in height. A module 1 includes an upper module including a substrate, a first component, and a sealing resin layer, and a lower module including an intermediate layer and a redistribution layer. The first component is connected to the redistribution layer with a columnar conductor interposed therebetween and provided in the intermediate layer, and both the first component and a second component are rewired by the redistribution layer. Since the intermediate layer is formed by using a frame-shaped substrate, the upper module and the lower module can be connected without necessarily a bump, so that it is possible to provide a module which has a fanout-type package-on-package structure and can be easily reduced in height.

Abstract: Disclosed is an LED display panel including inner LED display modules and outer LED display modules. Each of the inner LED display modules and the outer LED display modules includes a first flexible circuit board and a second flexible circuit board arrayed in a row in the lengthwise direction and on which LEDs are arrayed, and an upper viscoelastic film and a lower viscoelastic film bonded to each other through the first flexible circuit board and the second flexible circuit board. Each of the first flexible circuit board and the second flexible circuit board includes a folded edge portion and an unfolded edge portion opposite to the folded edge portion. A controller unit is disposed under the folded edge portion to control the LEDs. The folded edge portion of the first flexible circuit board faces the folded edge portion of the second flexible circuit board in each of the inner LED display modules.

Abstract: A memory device includes a memory cell array, a row decoder connected to the memory cell array by a plurality of string selection lines, a plurality of word lines, and a plurality of ground selection lines, and a common source line driver connected to the memory cell array by a common source line. The memory cell array is located in an upper chip, at least a portion of the row decoder is located in a lower chip, at least a portion of the common source line driver is located in the upper chip, and a plurality of upper bonding pads of the upper chip are connected to a plurality of lower bonding pads of the lower chip to connect the upper chip to the lower chip.

Abstract: A radio-frequency module includes a radio-frequency integrated circuit (RFIC) including a base connection terminal, and a first radio-frequency (RF) connection terminal; a first connection member including a mounting area on which the RFIC is mounted, a base wiring electrically connected to the base connection terminal of the RFIC, and a first RF wiring electrically connected to the first RF connection terminal of the RFIC; a second connection member including a second RF wiring electrically connected to the first RF wiring of the first connection member, and a third RF wiring, at least a portion of the second connection member being more flexible than the first connection member; and a front-end integrated circuit (FEIC) mounted on the second connection member and configured to amplify the first RF signal to generate the first communications signal or amplify the first communications signal to generate the first RF signal.

Abstract: A semiconductor package includes a first semiconductor chip and a second semiconductor chip which are disposed side-by-side on a surface of a package substrate. A heat insulation wall is disposed between the first semiconductor chip and the second semiconductor chip. The heat insulation wall thermally isolates the first semiconductor chip from the second semiconductor chip.

Abstract: A semiconductor package includes a package substrate, a logic chip on an upper surface of the package substrate and electrically connected to the package substrate, a heat sink contacting an upper surface of the logic chip to dissipate a heat generating from the logic chip, and a memory chip disposed on an upper surface of the heat sink and electrically connected to the package substrate.

Abstract: A package structure for a semiconductor device includes a first conductive layer, a second conductive layer, a first die, a second die, a plurality of first blind via pillars and a conductive structure. The first conductive layer has a first surface and a second surface. The first die and the second die respectively have an active surface and a back surface, which are disposed opposite to each other. There is a plurality of metal pads disposed on the active surface. The first die is attached to the first surface of the first conductive layer with its back surface, and the second die is attached to the second surface of the first conductive layer with its back surface. The first and second conductive layers, the first and second dies, the first blind hole pillars and conductive structure are covered by a dielectric material.

Abstract: Embodiments are related to systems and methods for fluidic assembly, and more particularly to systems and methods for increasing the efficiency of fluidic assembly.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: In a method for manufacturing a semiconductor device, a plurality of first provisional fixing portions are supplied on a front surface of a substrate such that the plurality of first provisional fixing portions are spaced from each other and thus dispersed. A first solder layer processed into a plate to be a first soldering portion is disposed in contact with the plurality of first provisional fixing portions. A semiconductor chip is disposed on the first solder layer. In addition a conductive member in the form of a flat plate is disposed thereon via a second provisional fixing portion and a second solder layer. A reflow process is performed to solder the substrate, the semiconductor chip and the conductive member together.

Abstract: A manufacturing method for semiconductor packages is provided. Chips are provided on a carrier. Through interlayer vias are formed over the carrier to surround the chips. A molding compound is formed over the carrier to partially and laterally encapsulate the chip and the through interlayer vias. The molding compound comprises pits on a top surface thereof. A polymeric molding compound is formed on the molding compound to fill the pits of the molding compound.

Abstract: A semiconductor mounting device for mounting chip components on a substrate, wherein the device is reduced in size. A semiconductor mounting device 10 comprises: a temporary placement stage 12 on which are loaded a plurality of chip components 30a, 30b, 30c; a conveyance head 14 that conveys the chip components 30a, 30b, 30c to the temporary placement stage 12, and also loads each of the chip components 30a, 30b, 30c on the temporary placement stage 12 so that the relative positions of the plurality of chip components 30a, 30b, 30c reach predetermined positions; a mounting stage 16 that secures a substrate 36 by suction; and a mounting head 18 that suctions the plurality of chip components 30a, 30b, 30c loaded on the temporary placement stage 12, and pressurizes while keeping the relative positions at prescribed positions on the substrate 36 that is secured by suction to the mounting stage 16.

Abstract: A semiconductor structure includes a stacked structure. The stacked structure includes a first semiconductor die and a second semiconductor die. The first semiconductor die includes a first semiconductor substrate having a first active surface and a first back surface opposite to the first active surface. The second semiconductor die is over the first semiconductor die, and includes a second semiconductor substrate having a second active surface and a second back surface opposite to the second active surface. The second semiconductor die is bonded to the first semiconductor die through joining the second active surface to the first back surface at a first hybrid bonding interface along a vertical direction. Along a lateral direction, a first dimension of the first semiconductor die is greater than a second dimension of the second semiconductor die.